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Spectroscopic assessment of short-term nitric acid doping of epitaxial graphene
Authors:
Ngoc Thanh Mai Tran,
Swapnil M. Mhatre,
Cristiane N. Santos,
Adam J. Biacchi,
Mathew L. Kelley,
Heather M. Hill,
Dipanjan Saha,
Chi-Te Liang,
Randolph E. Elmquist,
David B. Newell,
Benoit Hackens,
Christina A. Hacker,
Albert F. Rigosi
Abstract:
This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device proces…
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This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device processing can be a suitable alternative to large-scale, metallic gating. Most measurements are performed post-exposure at room temperature, and, for some electrical transport measurements, at 1.5 K. Vacuum conditions are applied to many measurements to replicate the laboratory conditions under which devices using this doping method would be measured. The relevant timescales from transport measurements are compared with results from X-ray photoelecton spectroscopy and Fourier transform infrared spectroscopy measurements, with the latter performed at ambient conditions and accompanied by calculations of the spectra in the Reststrahlen band.
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Submitted 15 April, 2022;
originally announced April 2022.
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Highly reproducible metal/graphene contacts and stable electrical performance by UV-Ozone treatment
Authors:
Wei Li,
Christina A. Hacker,
Yiran Liang,
Curt A. Richter,
David J. Gundlach,
Xuelei Liang,
Lianmao Peng
Abstract:
Resist residue from the device fabrication process is a general and significant source of the metal/graphene contact interface contamination. In this paper, Ultraviolet-Ozone (UVO) treatment is proven to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices, which were fabricated by using UVO treatment of the metal/graphene contact region, show that stabl…
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Resist residue from the device fabrication process is a general and significant source of the metal/graphene contact interface contamination. In this paper, Ultraviolet-Ozone (UVO) treatment is proven to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices, which were fabricated by using UVO treatment of the metal/graphene contact region, show that stable and highly reproducible low contact resistance between metal and graphene is obtained without affecting the electrical properties of the graphene channel itself.
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Submitted 29 May, 2013; v1 submitted 6 March, 2013;
originally announced March 2013.
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UV/Ozone treatment to reduce metal-graphene contact resistance
Authors:
Wei Li,
Yiran Liang,
Dangmin Yu,
Lianmao Peng,
Kurt P. Pernstich,
Tian Shen,
A. R. Hight Walker,
Guangjun Cheng,
Christina A. Hacker,
Curt A. Richter,
Qiliang Li,
David J. Gundlach,
Xuelei Liang
Abstract:
We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was foun…
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We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl methacrylate) (PMMA) and photoresist. Our control experiment shows that exposure times up to 10 minutes did not introduce significant disorder in the graphene as characterized by Raman spectroscopy. By using the described approach, contact resistance of less than 200 Ω μm was achieved, while not significantly altering the electrical properties of the graphene channel region of devices.
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Submitted 4 December, 2012;
originally announced December 2012.
