Showing 1–36 of 36 results for author: Ha, D

Cryogenic scanning photocurrent spectroscopy for materials responses to structured optical fields

Authors: Duxing Hao, Chun-I Lu, Ziqi Sun, Yu-Chen Chang, Wen-Hao Chang, Ye-Ru Chen, Akiyoshi Park, Beining Rao, Siyuan Qiu, Yann-Wen Lan, Ting-Hua Lu, Nai-Chang Yeh

Abstract: Circular dichroism spectroscopy is known to provide important insights into the interplay of different degrees of freedom in quantum materials, and yet spectroscopic study of the optoelectronic responses of quantum materials to structured optical fields, such as light with finite spin and orbital angular momentum, has not yet been widely explored, particularly at cryogenic temperature. Here we dem… ▽ More Circular dichroism spectroscopy is known to provide important insights into the interplay of different degrees of freedom in quantum materials, and yet spectroscopic study of the optoelectronic responses of quantum materials to structured optical fields, such as light with finite spin and orbital angular momentum, has not yet been widely explored, particularly at cryogenic temperature. Here we demonstrate the design and application of a novel instrument that integrates scanning spectroscopic photocurrent measurements with structured light of controlled spin and orbital angular momentum. For structured photons with wavelengths between 500 nm to 700 nm, this instrument can perform spatially resolved photocurrent measurements of two-dimensional materials or thin crystals under magnetic fields up to $\pm$ 14 Tesla, at temperatures from 300 K down to 3 K, with either spin angular momentum $\pm \hbar$ ororbital angular momentum $\pm \ell \hbar$ (where $\ell$=1,2,3... is the topological charge), and over a (35 $\times$ 25) $μm^2$ area with ~ 1 $μm$ spatial resolution. These capabilities of the instrument are exemplified by magneto-photocurrent spectroscopic measurements of monolayer 2H-$MoS_2$ field-effect transistors, which not only reveal the excitonic spectra but also demonstrate monotonically increasing photocurrents with increasing |$\ell $| as well as excitonic Zeeman splitting and an enhanced Landé g-factor due to the enhanced formation of intervalley dark excitons under magnetic field. These studies thus demonstrate the versatility of the scanning photocurrent spectrometry for investigating excitonic physics, optical selection rules, and optoelectronic responses of novel quantum materials and engineered quantum devices to structured light. △ Less

Submitted 30 May, 2025; originally announced May 2025.

He-Mg compounds and helium-driven nonmetal transition in metallic magnesium

Authors: Y. S. Huang, H. X. Song, Q. D. Hao, X. L. Pan, D. Wang, H. Wang, Y. F. Wang, Y. Sun, Hua Y. Geng

Abstract: The polymorphism and mechanism of helium compounds is crucial for understanding the physical and chemical nature of He-bearing materials under pressures. Here, we predict two new types of He-bearing compounds, MgHe and MgnHe (n = 6, 8, 10, 15, 18), being formed above 750 GPa by unbiased ab initio structure search. An unexpected bandgap is opened up in MgHe at as low as around 200 GPa. This is the… ▽ More The polymorphism and mechanism of helium compounds is crucial for understanding the physical and chemical nature of He-bearing materials under pressures. Here, we predict two new types of He-bearing compounds, MgHe and MgnHe (n = 6, 8, 10, 15, 18), being formed above 750 GPa by unbiased ab initio structure search. An unexpected bandgap is opened up in MgHe at as low as around 200 GPa. This is the first case of noble gas driven metal-nonmetal transition in all elements. The same mechanism is demonstrated also being applicable to other metallic elements, and making beryllium transform into a non-metallic state, a triumph that is impossible otherwise. Furthermore, the stability of the simple cubic phase of Mg (Mg-sc) is greatly enhanced by mixing with He, which lowers the critical pressure of pure Mg-sc from about 1.1 TPa down to 750 GPa to form ordered substitutional alloying phase of MgnHe on a simple cubic lattice of Mg. This is the first report on Mg-based noble gas substitutional alloy, in sharp contrast to the conventional wisdom that He preferring interstitial sites. The observed striking influences of He demonstrate the rich physics and chemistry of He-bearing compounds under ultra-high pressures. △ Less

Submitted 31 March, 2025; originally announced March 2025.

Comments: 22 pages, 5 figures, with supporting materials

Journal ref: Phys. Rev. B 110, 214102 (2024)

Two-dimensional Si spin qubit arrays with multilevel interconnects

Authors: Sieu D. Ha, Edwin Acuna, Kate Raach, Zachery T. Bloom, Teresa L. Brecht, James M. Chappell, Maxwell D. Choi, Justin E. Christensen, Ian T. Counts, Dominic Daprano, J. P. Dodson, Kevin Eng, David J. Fialkow, Christina A. C. Garcia, Wonill Ha, Thomas R. B. Harris, nathan holman, Isaac Khalaf, Justine W. Matten, Christi A. Peterson, Clifford E. Plesha, Matthew J. Ruiz, Aaron Smith, Bryan J. Thomas, Samuel J. Whiteley , et al. (4 additional authors not shown)

Abstract: The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semi… ▽ More The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semiconductor manufacturing, with multiple back-end-of-line layers to show an extendable two-dimensional array of spins with fully controllable nearest-neighbor exchange interactions. In a device using three interconnect layers, we encode exchange-only qubits and achieve average single-qubit gate fidelities consistent with single-layer devices, including fidelities greater than 99.9%, as measured by blind randomized benchmarking. Moreover, with spin connectivity in two dimensions, we show that both linear and right-angle exchange-only qubits with high performance can be formed, enabling qubit array reconfigurability in the presence of defects. This extendable device platform demonstrates that industrial manufacturing techniques can be leveraged for scalable spin qubit technologies. △ Less

Submitted 12 February, 2025; originally announced February 2025.

Distinctive Electronic Characteristics and Ultra-high Thermoelectric Power Factor in Be-Fe Intermetallics

Authors: Q. D. Hao, H. Wang, X. R. Chen, Hua Y. Geng

Abstract: Beryllium (Be) alloys are indispensable in cutting-edge applications due to their unique advantages. However, the scientific understanding about their structure and property is deficient, which greatly restricts their applications within a narrow field. In this work, a systematic investigation on the structure and properties of Be-Fe binary was carried out with first-principles unbiased evolutiona… ▽ More Beryllium (Be) alloys are indispensable in cutting-edge applications due to their unique advantages. However, the scientific understanding about their structure and property is deficient, which greatly restricts their applications within a narrow field. In this work, a systematic investigation on the structure and properties of Be-Fe binary was carried out with first-principles unbiased evolutionary algorithms. Five new intermetallics unreported before, including insulating Be11Fe and Be4Fe, metallic Be3Fe, and metastable BeFe and BeFe2 were discovered, among which Be11Fe has a unique clathrate structure and is an electride. Surprisingly, we found that Fe unexpectedly acts as an anion in all known Be-Fe intermetallics, and its valence state can even reach -5, leading to the complete filling of its 3d orbitals. Most of these compounds exhibiting a gap or pseudogap at the Fermi level. Specifically, the band gap is determined as 0.22 eV and 0.85 eV for Be11Fe and Be4Fe at the level of single-shot GW, respectively. This is the first report of insulating phases in Be-based intermetallics. We also discovered that Be11Fe exhibits an impressive thermoelectric power factor of 178 $μW cm^{-1}K^2$ at room temperature, to our best knowledge, the highest among known semiconductors under ambient conditions, indicating its potential for waste heat harvesting and active cooling. These findings will deepen our understanding of Be-based and Fe-based compounds, and expand the application fields of Be-based alloys to a brand-new realm. △ Less

Submitted 24 November, 2024; originally announced November 2024.

Comments: 29 pages, 6 figures, with Supplementary Information

Journal ref: J. Mater. Chem. A, 12, 24370-24379 (2024)

Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors

Authors: Duxing Hao, Wen-Hao Chang, Yu-Chen Chang, Wei-Tung Liu, Sheng-Zhu Ho, Chen-Hsuan Lu, Tilo H. Yang, Naoya Kawakami, Yi-Chun Chen, Ming-Hao Liu, Chun-Liang Lin, Ting-Hua Lu, Yann-Wen Lan, Nai-Chang Yeh

Abstract: In semiconducting monolayer transition metal dichalcogenides (ML-TMDs), broken inversion symmetry and strong spin-orbit coupling result in spin-valley lock-in effects so that the valley degeneracy may be lifted by external magnetic fields, potentially leading to real-space structural transformation. Here, we report magnetic field (B)-induced giant electric hysteretic responses to back-gate voltage… ▽ More In semiconducting monolayer transition metal dichalcogenides (ML-TMDs), broken inversion symmetry and strong spin-orbit coupling result in spin-valley lock-in effects so that the valley degeneracy may be lifted by external magnetic fields, potentially leading to real-space structural transformation. Here, we report magnetic field (B)-induced giant electric hysteretic responses to back-gate voltages in ML-MoS2 field-effect transistors (FETs) on SiO2/Si at temperatures < 20 K. The observed hysteresis increases with |B| up to 12 T and is tunable by varying the temperature. Raman spectroscopic and scanning tunneling microscopic studies reveal significant lattice expansion with increasing |B| at 4.2 K, and this lattice expansion becomes asymmetric in ML-MoS2 FETs on rigid SiO2/Si substrates, leading to out-of-plane mirror symmetry breaking and the emergence of a tunable out-of-plane ferroelectric-like polar order. This broken symmetry-induced polarization in ML-MoS2 shows typical ferroelectric butterfly hysteresis in piezo-response force microscopy, adding ML-MoS2 to the single-layer material family that exhibit out-of-plane polar order-induced ferroelectricity, which is promising for such technological applications as cryo-temperature ultracompact non-volatile memories, memtransistors, and ultrasensitive magnetic field sensors. Moreover, the polar effect induced by asymmetric lattice expansion may be further generalized to other ML-TMDs and achieved by nanoscale strain engineering of the substrate without magnetic fields. △ Less

Submitted 27 October, 2024; originally announced October 2024.

Journal ref: Adv. Mater. 36 (2024) 2411393

Strongly Enhanced Electronic Bandstructure Renormalization by Light in Nanoscale Strained Regions of Monolayer MoS$_2$/Au(111) Heterostructures

Authors: Akiyoshi Park, Rohit Kantipudi, Jonas Göser, Yinan Chen, Duxing Hao, Nai-Chang Yeh

Abstract: Understanding and controlling the photoexcited quasiparticle (QP) dynamics in monolayer transition metal dichalcogenides lays the foundation for exploring the strongly interacting, non-equilibrium 2D quasiparticle and polaritonic states in these quantum materials and for harnessing the properties emerging from these states for optoelectronic applications. In this study, scanning tunneling microsco… ▽ More Understanding and controlling the photoexcited quasiparticle (QP) dynamics in monolayer transition metal dichalcogenides lays the foundation for exploring the strongly interacting, non-equilibrium 2D quasiparticle and polaritonic states in these quantum materials and for harnessing the properties emerging from these states for optoelectronic applications. In this study, scanning tunneling microscopy/spectroscopy with light illumination at the tunneling junction is performed to investigate the QP dynamics in monolayer MoS$_2$ on an Au(111) substrate with nanoscale corrugations. The corrugations on the surface of the substrate induce nanoscale local strain in the overlaying monolayer MoS$_2$ single crystal, which result in energetically favorable spatial regions where photoexcited QPs, including excitons, trions, and electron-hole plasmas, accumulate. These strained regions exhibit pronounced electronic bandstructure renormalization as a function of the photoexcitation wavelength and intensity as well as the strain gradient, implying strong interplay among nanoscale structures, strain, and photoexcited QPs. In conjunction with the experimental work, we construct a theoretical framework that integrates non-uniform nanoscale strain into the electronic bandstructure of a monolayer MoS$_2$ lattice using a tight-binding approach combined with first-principle calculations. This methodology enables better understanding of the experimental observation of photoexcited QP localization in the nanoscale strain-modulated electronic bandstructure landscape. Our findings illustrate the feasibility of utilizing nanoscale architectures and optical excitations to manipulate the local electronic bandstructure of monolayer TMDs and to enhance the many-body interactions of excitons, which is promising for the development of nanoscale energy-adjustable optoelectronic and photonic technologies. △ Less

Submitted 2 October, 2024; originally announced October 2024.

Comments: 36 pages, 29 figures

Coherent control of a triangular exchange-only spin qubit

Authors: Edwin Acuna, Joseph D. Broz, Kaushal Shyamsundar, Antonio B. Mei, Colin P. Feeney, Valerie Smetanka, Tiffany Davis, Kangmu Lee, Maxwell D. Choi, Brydon Boyd, June Suh, Wonill D. Ha, Cameron Jennings, Andrew S. Pan, Daniel S. Sanchez, Matthew D. Reed, Jason R. Petta

Abstract: We demonstrate coherent control of a three-electron exchange-only spin qubit with the quantum dots arranged in a close-packed triangular geometry. The device is tuned to confine one electron in each quantum dot, as evidenced by pairwise charge stability diagrams. Time-domain control of the exchange coupling is demonstrated and qubit performance is characterized using blind randomized benchmarking,… ▽ More We demonstrate coherent control of a three-electron exchange-only spin qubit with the quantum dots arranged in a close-packed triangular geometry. The device is tuned to confine one electron in each quantum dot, as evidenced by pairwise charge stability diagrams. Time-domain control of the exchange coupling is demonstrated and qubit performance is characterized using blind randomized benchmarking, with an average single-qubit gate fidelity F = 99.84%. The compact triangular device geometry can be readily scaled to larger two-dimensional quantum dot arrays with high connectivity. △ Less

Submitted 5 June, 2024; originally announced June 2024.

Extended-range percolation in five dimensions

Authors: Zhipeng Xun, Dapeng Hao, Robert M. Ziff

Abstract: Percolation on a five-dimensional simple hypercubic (sc(5)) lattice with extended neighborhoods is investigated by means of extensive Monte Carlo simulations, using an effective single-cluster growth algorithm. The critical exponents, including $τ$ and $Ω$, the asymptotic behavior of the threshold $p_c$ and its dependence on coordination number $z$ are investigated. Using the bond and site percola… ▽ More Percolation on a five-dimensional simple hypercubic (sc(5)) lattice with extended neighborhoods is investigated by means of extensive Monte Carlo simulations, using an effective single-cluster growth algorithm. The critical exponents, including $τ$ and $Ω$, the asymptotic behavior of the threshold $p_c$ and its dependence on coordination number $z$ are investigated. Using the bond and site percolation thresholds $p_c = 0.11817145(3)$ and $0.14079633(4)$ respectively given by Mertens and Moore [Phys. Rev. E 98, 022120 (2018)], we find critical exponents of $τ= 2.4177(3)$, $Ω= 0.27(2)$ through a self-consistent process. The value of $τ$ compares favorably with a recent five-loop renormalization predictions $2.4175(2)$ by Borinsky et al. [Phys. Rev. D 103, 116024 (2021)], the value 2.4180(6) that follows from the work of Zhang et al. [Physica A 580, 126124 (2021)], and the measurement of $2.419(1)$ by Mertens and Moore. We also confirmed the bond threshold, finding $p_c = 0.11817150(5)$. sc(5) lattices with extended neighborhoods up to 7th nearest neighbors are studied for both bond and site percolation. Employing the values of $τ$ and $Ω$ mentioned above, thresholds are found to high precision. For bond percolation, the asymptotic value of $zp_c$ tends to Bethe-lattice behavior ($z p_c \sim 1$), and the finite-$z$ correction is found to be consistent with both and $zp_{c} - 1 \sim a_1 z^{-0.88}$ and $zp_{c} - 1 \sim a_0(3 + \ln z)/z$. For site percolation, the asymptotic analysis is close to the predicted behavior $zp_c \sim 32η_c = 1.742(2)$ for large $z$, where $η_c = 0.05443(7)$ is the continuum percolation threshold of five-dimensional hyperspheres given by Torquato and Jiao [J. Chem. Phys 137, 074106 (2015)]; finite-$z$ corrections are accounted for by taking $p_c \approx c/(z + b)$ with $c=1.722(7)$ and $b=1$. △ Less

Submitted 29 August, 2023; originally announced August 2023.

Imaging Atomic-Scale Chemistry from Fused Multi-Modal Electron Microscopy

Authors: Jonathan Schwartz, Zichao Wendy Di, Yi Jiang, Alyssa J. Fielitz, Don-Hyung Ha, Sanjaya D. Perera, Ismail El Baggari, Richard D. Robinson, Jeffrey A. Fessler, Colin Ophus, Steve Rozeveld, Robert Hovden

Abstract: Efforts to map atomic-scale chemistry at low doses with minimal noise using electron microscopes are fundamentally limited by inelastic interactions. Here, fused multi-modal electron microscopy offers high signal-to-noise ratio (SNR) recovery of material chemistry at nano- and atomic- resolution by coupling correlated information encoded within both elastic scattering (high-angle annular dark fiel… ▽ More Efforts to map atomic-scale chemistry at low doses with minimal noise using electron microscopes are fundamentally limited by inelastic interactions. Here, fused multi-modal electron microscopy offers high signal-to-noise ratio (SNR) recovery of material chemistry at nano- and atomic- resolution by coupling correlated information encoded within both elastic scattering (high-angle annular dark field (HAADF)) and inelastic spectroscopic signals (electron energy loss (EELS) or energy-dispersive x-ray (EDX)). By linking these simultaneously acquired signals, or modalities, the chemical distribution within nanomaterials can be imaged at significantly lower doses with existing detector hardware. In many cases, the dose requirements can be reduced by over one order of magnitude. This high SNR recovery of chemistry is tested against simulated and experimental atomic resolution data of heterogeneous nanomaterials. △ Less

Submitted 5 November, 2023; v1 submitted 3 March, 2022; originally announced March 2022.

Journal ref: npj Comut Mater 8, 16 (2022)

Universal logic with encoded spin qubits in silicon

Authors: Aaron J. Weinstein, Matthew D. Reed, Aaron M. Jones, Reed W. Andrews, David Barnes, Jacob Z. Blumoff, Larken E. Euliss, Kevin Eng, Bryan Fong, Sieu D. Ha, Daniel R. Hulbert, Clayton Jackson, Michael Jura, Tyler E. Keating, Joseph Kerckhoff, Andrey A. Kiselev, Justine Matten, Golam Sabbir, Aaron Smith, Jeffrey Wright, Matthew T. Rakher, Thaddeus D. Ladd, Matthew G. Borselli

Abstract: Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-… ▽ More Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-yielding quantum dot arrays. Here we show a device made using the single-layer etch-defined gate electrode architecture that achieves both the required functional yield needed for full control and the coherence necessary for thousands of calibrated exchange pulses to be applied. We measure an average two-qubit Clifford fidelity of $97.1 \pm 0.2\%$ with randomized benchmarking. We also use interleaved randomized benchmarking to demonstrate the controlled-NOT gate with $96.3 \pm 0.7\%$ fidelity, SWAP with $99.3 \pm 0.5\%$ fidelity, and a specialized entangling gate that limits spreading of leakage with $93.8 \pm 0.7\%$ fidelity. △ Less

Submitted 7 February, 2022; originally announced February 2022.

Universal behavior of site and bond percolation thresholds on regular lattices with compact extended-range neighborhoods in 2 and 3 dimensions

Authors: Zhipeng Xun, DaPeng Hao, Robert M. Ziff

Abstract: Extended-range percolation on various regular lattices, including all eleven Archimedean lattices in two dimensions, and the simple cubic (SC), body-centered cubic (BCC), and face-centered cubic (FCC) lattices in three dimensions, is investigated. In two dimensions, correlations between coordination number $z$ and site thresholds $p_c$ for Archimedean lattices up to 10th nearest neighbors (NN) are… ▽ More Extended-range percolation on various regular lattices, including all eleven Archimedean lattices in two dimensions, and the simple cubic (SC), body-centered cubic (BCC), and face-centered cubic (FCC) lattices in three dimensions, is investigated. In two dimensions, correlations between coordination number $z$ and site thresholds $p_c$ for Archimedean lattices up to 10th nearest neighbors (NN) are seen by plotting $z$ versus $1/p_{c}$ and $z$ versus $-1/\ln(1-p_c)$, using the data of d'Iribarne et al. [J. Phys. A 32:2611, 1999] and others. The results show that all the plots overlap on a line with a slope consistent with the theoretically predicted asymptotic value of $zp_{c} \sim 4 η_c = 4.51235$, where $η_c$ is the continuum threshold for disks. In three dimensions, precise site and bond thresholds for BCC and FCC lattices with 2nd and 3rd NN, and bond thresholds for the SC lattice with up to the 13th NN, are obtained by Monte-Carlo simulations, using an efficient single-cluster growth method. For site percolation, the values of thresholds for different types of lattices with compact neighborhoods also collapse together, and linear fitting is consistent with the predicted value of $zp_{c} \sim 8 η_c = 2.7351$, where $η_c$ is the continuum threshold for spheres. For bond percolation, Bethe-lattice behavior $p_c = 1/(z-1)$ is expected to hold for large $z$, and the finite-$z$ correction is confirmed to satisfy $zp_{c} - 1 \sim a_{1}z^{-x}$, with $x=2/3$ for three dimensions as predicted by Frei and Perkins [Electron. J. Probab. 21:56, 2016] and by Xu et al. [Phys. Rev. E, 103:022127, 2021]. Our analysis indicates that for compact neighborhoods, the asymptotic behavior of $zp_{c}$ is universal, depending only upon the dimension of the system and whether site or bond percolation, but not upon the type of lattice. △ Less

Submitted 21 November, 2021; originally announced November 2021.

Comments: Includes supplementary material. arXiv admin note: text overlap with arXiv:2010.02895, arXiv:2001.00349, arXiv:2109.11195

Site and bond percolation on four-dimensional simple hypercubic lattices with extended neighborhoods

Authors: Pengyu Zhao, Jinhong Yan, Zhipeng Xun, Dapeng Hao, Robert M. Ziff

Abstract: The asymptotic behavior of the percolation threshold $p_c$ and its dependence upon coordination number $z$ is investigated for both site and bond percolation on four-dimensional lattices with compact extended neighborhoods. Simple hypercubic lattices with neighborhoods up to 9th nearest neighbors are studied to high precision by means of Monte-Carlo simulations based upon a single-cluster growth a… ▽ More The asymptotic behavior of the percolation threshold $p_c$ and its dependence upon coordination number $z$ is investigated for both site and bond percolation on four-dimensional lattices with compact extended neighborhoods. Simple hypercubic lattices with neighborhoods up to 9th nearest neighbors are studied to high precision by means of Monte-Carlo simulations based upon a single-cluster growth algorithm. For site percolation, an asymptotic analysis confirms the predicted behavior $zp_c \sim 16 η_c = 2.086$ for large $z$, and finite-size corrections are accounted for by forms $p_c \sim 16 η_c/(z+b)$ and $p_c \sim 1- \exp(-16 η_c/z)$ where $η_c \approx 0.1304$ is the continuum percolation threshold of four-dimensional hyperspheres. For bond percolation, the finite-$z$ correction is found to be consistent with the prediction of Frei and Perkins, $zp_{c} - 1 \sim a_{1} (\ln z)/z$, although the behavior $zp_{c} - 1 \sim a_1 z^{-3/4}$ cannot be ruled out. △ Less

Submitted 17 January, 2022; v1 submitted 23 September, 2021; originally announced September 2021.

Comments: Contains supplementary material in files

A flexible design platform for Si/SiGe exchange-only qubits with low disorder

Authors: Wonill Ha, Sieu D. Ha, Maxwell D. Choi, Yan Tang, Adele E. Schmitz, Mark P. Levendorf, Kangmu Lee, James M. Chappell, Tower S. Adams, Daniel R. Hulbert, Edwin Acuna, Ramsey S. Noah, Justine W. Matten, Michael P. Jura, Jeffrey A. Wright, Matthew T. Rakher, Matthew G. Borselli

Abstract: Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that ar… ▽ More Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables non-trivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlapping gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data. △ Less

Submitted 22 July, 2021; originally announced July 2021.

Improved finite-difference and pseudospectral schemes for the Kardar-Parisi-Zhang equation with long-range temporal correlations

Authors: Xiongpeng Hu, Dapeng Hao, Hui Xia

Abstract: To investigate universal behavior and effects of long-range temporal correlations in kinetic roughening, we perform extensive simulations on the Kardar-Parisi-Zhang (KPZ) equation with temporally correlated noise based on pseudospectral (PS) and one of the improved finite-difference (FD) schemes. We find that scaling properties are affected by long-range temporal correlations within the effective… ▽ More To investigate universal behavior and effects of long-range temporal correlations in kinetic roughening, we perform extensive simulations on the Kardar-Parisi-Zhang (KPZ) equation with temporally correlated noise based on pseudospectral (PS) and one of the improved finite-difference (FD) schemes. We find that scaling properties are affected by long-range temporal correlations within the effective temporally correlated regions. Our results are consistent with each other using these two independent numerical schemes, three characteristic roughness exponents (global roughness exponent $α$, local roughness exponent $α_{loc}$, and spectral roughness exponent $α_{s}$) are approximately equal within the small temporally correlated regime, and satisfy $α_{loc} \approx α<α_{s}$ for the large temporally correlated regime, and the difference between $α_{s}$ and $α$ increases with increasing the temporal correlation exponent $θ$. Our results also show that PS and the improved FD schemes could effectively suppress numerical instabilities in the temporally correlated KPZ growth equation. Furthermore, our investigations suggest that when the effects of long-range temporal correlation are present, the continuum and discrete growth systems do not belong to the same universality class with the same temporal correlation exponent. △ Less

Submitted 17 April, 2023; v1 submitted 27 May, 2021; originally announced May 2021.

Optimization of Quantum-dot Qubit Fabrication via Machine Learning

Authors: Antonio B. Mei, Ivan Milosavljevic, Amanda L. Simpson, Valerie A. Smetanka, Colin P. Feeney, Shay M. Seguin, Sieu D. Ha, Wonill Ha, Matthew D. Reed

Abstract: Precise nanofabrication represents a critical challenge to developing semiconductor quantum-dot qubits for practical quantum computation. Here, we design and train a convolutional neural network to interpret in-line scanning electron micrographs and quantify qualitative features affecting device functionality. The high-throughput strategy is exemplified by optimizing a model lithographic process w… ▽ More Precise nanofabrication represents a critical challenge to developing semiconductor quantum-dot qubits for practical quantum computation. Here, we design and train a convolutional neural network to interpret in-line scanning electron micrographs and quantify qualitative features affecting device functionality. The high-throughput strategy is exemplified by optimizing a model lithographic process within a five-dimensional design space and by demonstrating a new approach to address lithographic proximity effects. The present results emphasize the benefits of machine learning for developing robust processes, shortening development cycles, and enforcing quality control during qubit fabrication. △ Less

Submitted 15 December, 2020; originally announced December 2020.

Journal ref: Appl. Phys. Lett. 118, 204001 (2021)

Site percolation on square and simple cubic lattices with extended neighborhoods and their continuum limit

Authors: Zhipeng Xun, Dapeng Hao, Robert M. Ziff

Abstract: By means of Monte Carlo simulations, we study long-range site percolation on square and simple cubic lattices with various combinations of nearest neighbors, up to the eighth neighbors for the square lattice and the ninth neighbors for the simple cubic lattice. We find precise thresholds for 23 systems using a single-cluster growth algorithm. Site percolation on lattices with compact neighborhoods… ▽ More By means of Monte Carlo simulations, we study long-range site percolation on square and simple cubic lattices with various combinations of nearest neighbors, up to the eighth neighbors for the square lattice and the ninth neighbors for the simple cubic lattice. We find precise thresholds for 23 systems using a single-cluster growth algorithm. Site percolation on lattices with compact neighborhoods can be mapped to problems of lattice percolation of extended shapes, such as disks and spheres, and the thresholds can be related to the continuum thresholds $η_c$ for objects of those shapes. This mapping implies $zp_{c} \sim 4 η_c = 4.51235$ in 2D and $zp_{c} \sim 8 η_c = 2.73512$ in 3D for large $z$ for circular and spherical neighborhoods respectively, where $z$ is the coordination number. Fitting our data to the form $p_c = c/(z+b)$ we find good agreement with $c = 2^d η_c$; the constant $b$ represents a finite-$z$ correction term. We also study power-law fits of the thresholds. △ Less

Submitted 6 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. E 103, 022126 (2021)

Magnetic Gradient Fluctuations from Quadrupolar $^{73}$Ge in Si/SiGe Exchange-Only Qubits

Authors: J. Kerckhoff, B. Sun, B. H. Fong, C. Jones, A. A. Kiselev, D. W. Barnes, R. S. Noah, E. Acuna, M. Akmal, S. D. Ha, J. A. Wright, B. J. Thomas, C. A. C. Jackson, L. F. Edge, K. Eng, R. S. Ross, T. D. Ladd

Abstract: We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width… ▽ More We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width of the Si quantum well. The $^{73}$Ge noise peaks appear at the fundamental and first harmonic of the $^{73}$Ge Larmor resonance, superimposed over $1/f$ noise due to $^{29}$Si dipole-dipole dynamics, and are dependent on material epitaxy and applied magnetic field. These results may inform the needs of dynamical decoupling when using Si/SiGe quantum dots as qubits in quantum information processing devices. △ Less

Submitted 17 September, 2020; originally announced September 2020.

Comments: 17 pages, 11 figures

Journal ref: PRX Quantum 2, 010347 (2021)

Charge transfer energy in iridates: a hard x-ray photoelectron spectroscopy study

Authors: D. Takegami, D. Kasinathan, K. K. Wolff, S. G. Altendorf, C. F. Chang, K. Hoefer, A. Melendez-Sans, Y. Utsumi, F. Meneghin, T. D. Ha, C. H. Yen, K. Chen, C. Y. Kuo, Y. F. Liao, K. D. Tsuei, R. Morrow, S. Wurmehl, B. Büchner, B. E. Prasad, M. Jansen, A. C. Komarek, P. Hansmann, L. H. Tjeng

Abstract: We have investigated the electronic structure of iridates in the double perovskite crystal structure containing either Ir$^{4+}$ or Ir$^{5+}$ using hard x-ray photoelectron spectroscopy. The experimental valence band spectra can be well reproduced using tight binding calculations including only the Ir $5d$, O $2p$ and O $2s$ orbitals with parameters based on the downfolding of the density-function… ▽ More We have investigated the electronic structure of iridates in the double perovskite crystal structure containing either Ir$^{4+}$ or Ir$^{5+}$ using hard x-ray photoelectron spectroscopy. The experimental valence band spectra can be well reproduced using tight binding calculations including only the Ir $5d$, O $2p$ and O $2s$ orbitals with parameters based on the downfolding of the density-functional band structure results. We found that regardless of the A and B cations, the A$_2$BIrO$_6$ iridates have essentially zero O $2p$ to Ir $5d$ charge transfer energies. Hence, double perovskite iridates turn out to be extremely covalent systems with the consequence being that the magnetic exchange interactions become very long-ranged, thereby hampering the materialization of the long-sought Kitaev physics. Nevertheless, it still would be possible to realize a spin-liquid system using the iridates with a proper tuning of the various competing exchange interactions. △ Less

Submitted 25 May, 2020; originally announced May 2020.

Comments: 9 pages, 7 figures, submitted to Physical Review B

Journal ref: Phys. Rev. B 102, 045119 (2020)

A time- and angle-resolved photoemission spectroscopy with probe photon energy up to 6.7 eV

Authors: Yuanyuan Yang, Tianwei Tang, Shaofeng Duan, Chaocheng Zhou, Duxing Hao, Wentao Zhang

Abstract: We present the development of a time- and angle-resolved photoemission spectroscopy based on a Yb-based femtosecond laser and a hemispherical electron analyzer. The energy of the pump photon is tunable between 1.4 and 1.9 eV, and the pulse duration is around 30 fs. We use a KBe$_2$BO$_3$F$_2$ non-linear optical crystal to generate probe pulses, of which the photon energy is up to 6.7 eV, and obtai… ▽ More We present the development of a time- and angle-resolved photoemission spectroscopy based on a Yb-based femtosecond laser and a hemispherical electron analyzer. The energy of the pump photon is tunable between 1.4 and 1.9 eV, and the pulse duration is around 30 fs. We use a KBe$_2$BO$_3$F$_2$ non-linear optical crystal to generate probe pulses, of which the photon energy is up to 6.7 eV, and obtain an overall time resolution of 1 ps and energy resolution of 18 meV. In addition, $β$-BaB$_2$O$_4$ crystals are used to generate alternative probe pulses at 6.05 eV, giving an overall time resolution of 130 fs and energy resolution of 19 meV. We illustrate the performance of the system with representative data on several samples (Bi$_2$Se$_3$, YbCd$_2$Sb$_2$, FeSe). △ Less

Submitted 1 March, 2020; originally announced March 2020.

Comments: 8 pages, 5 figures

Journal ref: Rev. Sci. Instrum. 90, 063905 (2019)

Quantifying error and leakage in an encoded Si/SiGe triple-dot qubit

Authors: R. W. Andrews, C. Jones, M. D. Reed, A. M. Jones, S. D. Ha, M. P. Jura, J. Kerckhoff, M. Levendorf, S. Meenehan, S. T. Merkel, A. Smith, B. Sun, A. J. Weinstein, M. T. Rakher, T. D. Ladd, M. G. Borselli

Abstract: Quantum computation requires qubits that satisfy often-conflicting criteria, including scalable control and long-lasting coherence. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Though such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes and… ▽ More Quantum computation requires qubits that satisfy often-conflicting criteria, including scalable control and long-lasting coherence. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Though such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes and can also allow logical control with a single type of entangling interaction while maintaining favorable features of the underlying physical system. Here we demonstrate a qubit encoded in a subsystem of three coupled electron spins confined in gated, isotopically enhanced silicon quantum dots. Using a modified "blind" randomized benchmarking protocol that determines both computational and leakage errors, we show that unitary operations have an average total error of 0.35%, with 0.17% of that coming from leakage driven by interactions with substrate nuclear spins. This demonstration utilizes only the voltage-controlled exchange interaction for qubit manipulation and highlights the operational benefits of encoded subsystems, heralding the realization of high-quality encoded multi-qubit operations. △ Less

Submitted 6 December, 2018; originally announced December 2018.

Comments: 15 pages, 6 figures

Journal ref: Nature Nanotechnology 14, 747-750 (2019)

Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots

Authors: A. M. Jones, E. J. Pritchett, E. H. Chen, T. E. Keating, R. W. Andrews, J. Z. Blumoff, L. A. De Lorenzo, K. Eng, S. D. Ha, A. A. Kiselev, S. M. Meenehan, S. T. Merkel, J. A. Wright, L. F. Edge, R. S. Ross, M. T. Rakher, M. G. Borselli, A. Hunter

Abstract: We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the mea… ▽ More We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the measured splitting varies smoothly as a function of confinement gate biases. Not only does this demonstration prove the value of having an $in~situ$ excited-state measurement technique as part of a standard tune-up procedure, it also suggests that in typical Si/SiGe quantum dot devices, spin-blockade can be limited by lateral orbital excitation energy rather than valley splitting. △ Less

Submitted 21 September, 2018; originally announced September 2018.

Comments: 18 pages, 9 figures

Journal ref: Phys. Rev. Applied 12, 014026 (2019)

Optical Stark Effect of a Single Defect on TiO2(110) Surface

Authors: Lihuan Sun, Anning Dong, Jianmei Li, Dong Hao, Xiangqian Tang, Shichao Yan, Yang Guo, Xinyan Shan, Xinghua Lu

Abstract: Probing optical Stark effect at the single-molecule or atomic scale is crucial for understanding many photo-induced chemical and physical processes on surfaces. Here we report a study about optical Stark effect of single atomic defects on TiO2(110) surface with photo-assisted scanning tunneling spectroscopy. When a laser is coupled into the tunneling junction, the mid-gap state of OH-O2 defects ch… ▽ More Probing optical Stark effect at the single-molecule or atomic scale is crucial for understanding many photo-induced chemical and physical processes on surfaces. Here we report a study about optical Stark effect of single atomic defects on TiO2(110) surface with photo-assisted scanning tunneling spectroscopy. When a laser is coupled into the tunneling junction, the mid-gap state of OH-O2 defects changes remarkably in the differential conductance spectra. As laser power gradually increases, the energy of the mid-gap state shifts away from the Fermi level with increase in intensity and broadening of peak width. The observation can be explained as optical Stark effect with the Autler-Townes formula. This large optical Stark effect is due to the tip-enhancement and the strong dipole moment in the transient charged state during electron tunneling. Our study provides new aspects in exploring electron-photon interactions at the microscopic scale. △ Less

Submitted 23 July, 2018; v1 submitted 23 July, 2018; originally announced July 2018.

Comments: 13 pages, 4 figures

Strain induced changes of electronic properties of B-site ordered double perovskite Sr$_2$CoIrO$_6$ thin films

Authors: S. Esser, C. F. Chang, C. -Y. Kuo, S. Merten, V. Roddatis, T. D. Ha, A. Jesche, V. Moshnyaga, H. -J. Lin, A. Tanaka, C. T. Chen, L. H. Tjeng, P. Gegenwart

Abstract: B-site ordered thin films of double perovskite Sr$_2$CoIrO$_6$ were epitaxially grown by a metal-organic aerosol deposition technique on various substrates, actuating different strain states. X-ray diffraction, transmission electron microscopy and polarized far-field Raman spectroscopy confirm the strained epitaxial growth on all used substrates. Polarization dependent Co $L_{2,3}$ X-ray absorptio… ▽ More B-site ordered thin films of double perovskite Sr$_2$CoIrO$_6$ were epitaxially grown by a metal-organic aerosol deposition technique on various substrates, actuating different strain states. X-ray diffraction, transmission electron microscopy and polarized far-field Raman spectroscopy confirm the strained epitaxial growth on all used substrates. Polarization dependent Co $L_{2,3}$ X-ray absorption spectroscopy reveals a change of the magnetic easy axis of the antiferromagnetically ordered (high-spin) Co$^{3+}$ sublattice within the strain series. By reversing the applied strain direction from tensile to compressive, the easy axis changes abruptly from in-plane to out-of-plane orientation. The low-temperature magnetoresistance changes its sign respectively and is described by a combination of weak anti-localization and anisotropic magnetoresistance effects. △ Less

Submitted 16 April, 2018; v1 submitted 11 January, 2018; originally announced January 2018.

Comments: 19 pages, 29 figures (including supplemental material)

Journal ref: Phys. Rev. B 97, 205121 (2018)

Nanomaterial datasets to advance tomography in scanning transmission electron microscopy

Authors: Barnaby D. A. Levin, Elliot Padgett, Chien-Chun Chen, M. C. Scott, Rui Xu, Wolfgang Theis, Yi Jiang, Yongsoo Yang, Colin Ophus, Haitao Zhang, Don-Hyung Ha, Deli Wang, Yingchao Yu, Hector D. Abruna, Richard D. Robinson, Peter Ercius, Lena F. Kourkoutis, Jianwei Miao, David A. Muller, Robert Hovden

Abstract: Electron tomography in materials science has flourished with the demand to characterize nanoscale materials in three dimensions (3D). Access to experimental data is vital for developing and validating reconstruction methods that improve resolution and reduce radiation dose requirements. This work presents five high-quality scanning transmission electron microscope (STEM) tomography datasets in ord… ▽ More Electron tomography in materials science has flourished with the demand to characterize nanoscale materials in three dimensions (3D). Access to experimental data is vital for developing and validating reconstruction methods that improve resolution and reduce radiation dose requirements. This work presents five high-quality scanning transmission electron microscope (STEM) tomography datasets in order to address the critical need for open access data in this field. The datasets represent the current limits of experimental technique, are of high quality, and contain materials with structural complexity. Included are tomographic series of a hyperbranched Co2P nanocrystal, platinum nanoparticles on a carbon nanofibre imaged over the complete 180° tilt range, a platinum nanoparticle and a tungsten needle both imaged at atomic resolution by equal slope tomography, and a through-focal tilt series of PtCu nanoparticles. A volumetric reconstruction from every dataset is provided for comparison and development of post-processing and visualization techniques. Researchers interested in creating novel data processing and reconstruction algorithms will now have access to state of the art experimental test data. △ Less

Submitted 9 June, 2016; originally announced June 2016.

Comments: 3 figures, 10 datasets

Journal ref: Scientific Data 3, Article number: 160041 (2016)

High-performance chemical-bath deposited CdS thin-film transistors with ZrO2 gate dielectric

Authors: Hareesh Dondapati, Duc Ha, Erin Jenrette, Bo Xiao, A. K. Pradhan

Abstract: We demonstrate high performance chemical bath deposited CdS thin-film transistors TFTs using atomic layer deposited ZrO2 based high-k gate dielectric material. We demonstrate high performance chemical bath deposited CdS thin-film transistors TFTs using atomic layer deposited ZrO2 based high-k gate dielectric material. △ Less

Submitted 25 May, 2015; originally announced May 2015.

Enhanced photocurrent in solution processed electronically coupled CdSe nanocrystals thin films

Authors: Hareesh Dondapati, Duc Ha, A. K. Pradhan

Abstract: We have demonstrated the fabrication of highly continuous and smooth CdSe semiconductor films containing self-assembled nanocrystals (NCs) using a simple, low cost solution-processed deposition technique. The impact of thermal annealing and ethanedithiol (EDT) treatment on oleate capped CdSe NCs films is illustrated. Post deposition EDT treatment enhances strong electron coupling between NCs by re… ▽ More We have demonstrated the fabrication of highly continuous and smooth CdSe semiconductor films containing self-assembled nanocrystals (NCs) using a simple, low cost solution-processed deposition technique. The impact of thermal annealing and ethanedithiol (EDT) treatment on oleate capped CdSe NCs films is illustrated. Post deposition EDT treatment enhances strong electron coupling between NCs by reducing the inter-particle distance, which enhances four orders of magnitude of photocurrent in the pn-device. Mild thermal annealing of NC films cause large redshift and significant broadening. Our findings suggest that NCs with short-range organic ligands are suitable for high-performance Thin-Film-Transistors and next generation high-efficiency photovoltaics. △ Less

Submitted 25 May, 2015; originally announced May 2015.

Neuromimetic Circuits with Synaptic Devices based on Strongly Correlated Electron Systems

Authors: Sieu D. Ha, Jian Shi, Yasmine Meroz, L. Mahadevan, Shriram Ramanathan

Abstract: Strongly correlated electron systems such as the rare-earth nickelates (RNiO3, R = rare-earth element) can exhibit synapse-like continuous long term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and… ▽ More Strongly correlated electron systems such as the rare-earth nickelates (RNiO3, R = rare-earth element) can exhibit synapse-like continuous long term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and unlearning using nickelate-based synaptic devices in an electronic circuit compatible with both excitatory and inhibitory neurons. We establish a physical model for the device behavior based on electric-field driven coupled ionic-electronic diffusion that can be utilized for design of more complex systems. We use the model to simulate a variety of associate and non-associative learning mechanisms, as well as a feedforward recurrent network for storing memory. Our circuit intuitively parallels biological neural architectures, and it can be readily generalized to other forms of cellular learning and extinction. The simulation of neural function with electronic device analogues may provide insight into biological processes such as decision making, learning and adaptation, while facilitating advanced parallel information processing in hardware. △ Less

Submitted 15 November, 2014; originally announced November 2014.

Journal ref: Phys. Rev. Applied 2, 064003 (2014)

Conductivity noise study of the insulator-metal transition and phase co-existence in epitaxial samarium nickelate thin films

Authors: Anindita Sahoo, Sieu D. Ha, Shriram Ramanathan, Arindam Ghosh

Abstract: Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually "bad metal", but also introduces a temperature driven insulator-metal phase transition. Here we investigate this insulator-metal phase transition in thin films of $\mathrm{SmNiO_3}$ using the slow time dependent fluctuations (noise) in resistivity. The normalized magnitude of noise is… ▽ More Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually "bad metal", but also introduces a temperature driven insulator-metal phase transition. Here we investigate this insulator-metal phase transition in thin films of $\mathrm{SmNiO_3}$ using the slow time dependent fluctuations (noise) in resistivity. The normalized magnitude of noise is found to be extremely large, being nearly eight orders of magnitude higher than thin films of common disordered metallic systems, and indicates electrical conduction via classical percolation in a spatially inhomogeneous medium. The higher order statistics of the fluctuations indicate a strong non-Gaussian component of noise close to the transition, attributing the inhomogeneity to co-existence of the metallic and insulating phases. Our experiment offers a new insight on the impact of lattice-orbital coupling on the microscopic mechanism of electron transport in the rare-earth nickelates. △ Less

Submitted 3 August, 2014; originally announced August 2014.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 90, 085116 (2014)

Origins of bad metal conductivity and the insulator-metal transition in the rare-earth nickelates

Authors: R. Jaramillo, Sieu D. Ha, D. M. Silevitch, Shriram Ramanathan

Abstract: For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenberg's uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3… ▽ More For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenberg's uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3 thin films using infrared spectroscopy while varying T and disorder. We show that the interaction between lattice distortions and Ni-O bond covalence explains both the bad metal conduction and the insulator-metal transition in the nickelates by shifting spectral weight over the large energy scale established by the Ni-O orbital interaction, thus enabling very low σwhile preserving the Drude model and without violating the uncertainty principle. △ Less

Submitted 27 September, 2013; originally announced September 2013.

Electrical switching dynamics and broadband microwave characteristics of VO2 RF devices

Authors: Sieu D. Ha, You Zhou, Christopher J. Fisher, Shriram Ramanathan, Jacob P. Treadway

Abstract: Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides and demonstrate a large resistance modulation of the same magnitude (>10^3) in both electrically (i.e. by bias voltage, referred to as E-MIT) and thermally (T-M… ▽ More Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides and demonstrate a large resistance modulation of the same magnitude (>10^3) in both electrically (i.e. by bias voltage, referred to as E-MIT) and thermally (T-MIT) driven transitions. We examine transient switching characteristics of the E-MIT and observe two distinguishable time scales for switching. We find an abrupt jump in conductivity with a rise time of the order of 10 ns followed by an oscillatory damping to steady state on the order of several μs. We characterize the RF power response in the On state and find that high RF input power drives VO2 further into the metallic phase, indicating that electromagnetic radiation-switching of the phase transition may be possible. We measure S-parameter RF properties up to 13.5 GHz. Insertion loss is markedly flat at 2.95 dB across the frequency range in the On state and sufficient isolation of over 25 dB is observed in the Off state. We are able to simulate the RF response accurately using both lumped element and 3D electromagnetic models. Extrapolation of our results suggests that optimizing device geometry can reduce insertion loss further and maintain broadband flatness up to 40 GHz. △ Less

Submitted 3 June, 2013; originally announced June 2013.

Journal ref: J. Appl. Phys. 113, 184501 (2013)

Electrostatic gating of metallic and insulating phases in SmNiO3 ultrathin films

Authors: Sieu D. Ha, Ulrich Vetter, Jian Shi, Shriram Ramanathan

Abstract: The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 °C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the channel resistance and transition temperature. Resistance reduction is observed across both insulating and metallic phases with ~25% modulation at room temperature. We… ▽ More The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 °C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the channel resistance and transition temperature. Resistance reduction is observed across both insulating and metallic phases with ~25% modulation at room temperature. We show that resistance modulation is predominantly due to electrostatic charge accumulation and not electrochemical doping by control experiments in inert and air en-vironments. We model the resistance behavior and estimate the accumulated sheet density (~1-2 x 10^14 cm^-2) and EDL capacitance (~12 μF/cm^2). △ Less

Submitted 9 May, 2013; originally announced May 2013.

Journal ref: Appl. Phys. Lett. 102, 183102 (2013)

Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism

Authors: Sieu D. Ha, R. Jaramillo, D. M. Silevitch, Frank Schoofs, Kian Kerman, John D. Baniecki, Shriram Ramanathan

Abstract: The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with va… ▽ More The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with varying oxygen stoichiometry. We find that from room temperature through the high temperature insulator-metal transition, the Hall coefficient is hole-like and the Seebeck coefficient is electron-like. At low temperature the Néel transition induces a crossover in the sign of RH to electron-like, similar to the effects of spin density wave formation in metallic systems but here arising in an insulating phase ~200 K below the insulator-metal transition. We propose that antiferromagnetism can be stabilized by bandstructure even in insulating phases of correlated oxides, such as RNiO3, that fall between the limits of strong and weak electron correlation. △ Less

Submitted 5 March, 2013; v1 submitted 9 January, 2013; originally announced January 2013.

Comments: *Equally contributing first authors

Journal ref: Phys. Rev. B 87, 125150 (2013)

Magnetic susceptibility of alkali-TCNQ salts and extended Hubbard models with bond order and charge density wave phases

Authors: Manoranjan Kumar, Benjamin J. Topham, Rui Hui Yu, Quoc Binh Dang Ha, Zolt'an G. Soos

Abstract: The molar spin susceptibilities $χ(T)$ of Na-TCNQ, K-TCNQ and Rb-TCNQ(II) are fit quantitatively to 450 K in terms of half-filled bands of three one-dimensional Hubbard models with extended interactions using exact results for finite systems. All three models have bond order wave (BOW) and charge density wave (CDW) phases with boundary $V = V_c(U)$ for nearest-neighbor interaction $V$ and on-site… ▽ More The molar spin susceptibilities $χ(T)$ of Na-TCNQ, K-TCNQ and Rb-TCNQ(II) are fit quantitatively to 450 K in terms of half-filled bands of three one-dimensional Hubbard models with extended interactions using exact results for finite systems. All three models have bond order wave (BOW) and charge density wave (CDW) phases with boundary $V = V_c(U)$ for nearest-neighbor interaction $V$ and on-site repulsion $U$. At high $T$, all three salts have regular stacks of $\rm TCNQ^-$ anion radicals. The $χ(T)$ fits place Na and K in the CDW phase and Rb(II) in the BOW phase with $V \approx V_c$. The Na and K salts have dimerized stacks at $T < T_d$ while Rb(II) has regular stacks at 100K. The $χ(T)$ analysis extends to dimerized stacks and to dimerization fluctuations in Rb(II). The three models yield consistent values of $U$, $V$ and transfer integrals $t$ for closely related $\rm TCNQ^-$ stacks. Model parameters based on $χ(T)$ are smaller than those from optical data that in turn are considerably reduced by electronic polarization from quantum chemical calculation of $U$, $V$ and $t$ on adjacent $\rm TCNQ^-$ ions. The $χ(T)$ analysis shows that fully relaxed states have reduced model parameters compared to optical or vibration spectra of dimerized or regular $\rm TCNQ^-$ stacks. △ Less

Submitted 27 June, 2011; originally announced June 2011.

Comments: 9 pages and 5 figures

Journal ref: J. Chem. Phys. 134, 234304 (2011)

Metal-insulator transition and electrically-driven memristive characteristics of SmNiO3 thin films

Authors: Sieu D. Ha, Gulgun H. Aydogdu, Shriram Ramanathan

Abstract: The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 °C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperat… ▽ More The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 °C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperature measurements in films grown on both substrates, with charge transport in-plane for LAO/SNO films and out-of-plane for Si/SNO films. Electrically-driven memristive behavior is realized in LAO/SNO films, suggesting that SNO may be relevant for neuromorphic devices. △ Less

Submitted 18 January, 2011; originally announced January 2011.

Single-filament Composite MgB2/SUS Ribbons by Powder-In-Tube Process

Authors: K. J. Song, N. J. Lee, H. M. Jang, H. S. Ha, D. W. Ha, S. S. OH, M. H. Sohn, Y. K. Kwon, K. S. Ryu

Abstract: We report the successful fabrication of single-filament composite MgB2/SUS ribbons, as an ultra-robust conductor type, employing the powder-in-tube (PIT) process, by swaging and cold rolling only. The remarkable transport critical current (Ic) of the non-sintered MgB2/SUS ribbon has observed, as an unexpected result. Transport critical currents Ic ~ 316 A at T = 4.2 K and Ic ~ 82 A at T = 20 K w… ▽ More We report the successful fabrication of single-filament composite MgB2/SUS ribbons, as an ultra-robust conductor type, employing the powder-in-tube (PIT) process, by swaging and cold rolling only. The remarkable transport critical current (Ic) of the non-sintered MgB2/SUS ribbon has observed, as an unexpected result. Transport critical currents Ic ~ 316 A at T = 4.2 K and Ic ~ 82 A at T = 20 K were observed at self-field, for the non-sintered composite MgB2/SUS ribbon. In addition, the persistent current density Jp values, that were estimated by Bean formula, were more than ~ 7 &#61620; 105 A/cm2 at T = 5 K, and ~ 1.2 &#61620; 105 A/cm2 at T = 30 K, for the sintered composite MgB2/SUS ribbon, at H = 0 G. △ Less

Submitted 6 June, 2001; originally announced June 2001.

Comments: 10 pages, 4 figures

Synthesis and characterization of the infinite-layer superconductor Sr_{0.9}La_{0.1}CuO_{2}

Authors: C. U. Jung, J. Y. Kim, Mun-Seog Kim, S. Y. Lee, Sung-Ik Lee, D. H. Ha

Abstract: We report the high-pressure synthesis of the electron-doped infinite-layer superconductor Sr_{0.9}La_{0.1}CuO_{2}. A Rietveld analysis using X-ray powder diffraction data showed that, within the resolution of the measurement, the sample was purely an infinite-layer structure without any discernible impurities. The superconducting volume fraction and the transition width were greatly improved com… ▽ More We report the high-pressure synthesis of the electron-doped infinite-layer superconductor Sr_{0.9}La_{0.1}CuO_{2}. A Rietveld analysis using X-ray powder diffraction data showed that, within the resolution of the measurement, the sample was purely an infinite-layer structure without any discernible impurities. The superconducting volume fraction and the transition width were greatly improved compared to those in the previous reports. Also the irreversibility field line was much higher than that of (La,Sr)_{2}CuO_{4}. The higher value seems to originate from the strong interlayer coupling due to the reduced average distance between the CuO_{2} planes. △ Less

Submitted 19 October, 2000; originally announced October 2000.

Comments: 6 page, 4 figures