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Efficient electronic cooling above 2 K by niobium-based superconducting tunnel junctions
Authors:
J. Hätinen,
A. Ronzani,
R. P. Loreto,
E. Mykkänen,
A. Kemppinen,
K. Viisanen,
T. Rantanen,
J. Geisor,
J. Lehtinen,
M. Ribeiro,
J-P. Kaikkonen,
O. Prakash,
V. Vesterinen,
W. Förbom,
E. T. Mannila,
M. Kervinen,
J. Govenius,
M. Prunnila
Abstract:
Replacing the bulky cryoliquid-based cooling stages of cryoenabled instruments by chip-scale refrigeration is envisioned to disruptively reduce the system size similar to microprocessors did for computers. Electronic refrigerators based on superconducting tunnel junctions have been anticipated to provide a solution, but reaching the necessary above the 1-K operation temperature range has remained…
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Replacing the bulky cryoliquid-based cooling stages of cryoenabled instruments by chip-scale refrigeration is envisioned to disruptively reduce the system size similar to microprocessors did for computers. Electronic refrigerators based on superconducting tunnel junctions have been anticipated to provide a solution, but reaching the necessary above the 1-K operation temperature range has remained a goal out of reach for several decades. We show efficient electronic refrigeration by Al-AlO$_x$-Nb superconducting tunnel junctions starting from bath temperatures above 2 K. The junctions can deliver electronic cooling power up to approximately mW/mm$^2$, which enables us to demonstrate tunnel-current-driven electron temperature reduction from 2.4 K to below 1.6 K (34% relative cooling) against the phonon bath. Our work shows that the key material of integrated superconducting circuits - niobium - enables powerful cryogenic refrigerator technology. This result is a prerequisite for practical cryogenic chip-scale refrigerators and, at the same time, it introduces a new electrothermal tool for quantum heat-transport experiments.
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Submitted 13 December, 2024; v1 submitted 13 March, 2024;
originally announced March 2024.
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Thermal resistance in superconducting flip-chip assemblies
Authors:
Joel Hätinen,
Emma Mykkänen,
Klaara Viisanen,
Alberto Ronzani,
Antti Kemppinen,
Lassi Lehtisyrjä,
Janne S. Lehtinen,
Mika Prunnila
Abstract:
Cryogenic microsystems that utilize different 3D integration techniques are being actively developed, e.g., for the needs of quantum technologies. 3D integration can introduce opportunities and challenges to the thermal management of low temperature devices. In this work, we investigate sub-1 K inter-chip thermal resistance of a flip-chip bonded assembly, where two silicon chips are interconnected…
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Cryogenic microsystems that utilize different 3D integration techniques are being actively developed, e.g., for the needs of quantum technologies. 3D integration can introduce opportunities and challenges to the thermal management of low temperature devices. In this work, we investigate sub-1 K inter-chip thermal resistance of a flip-chip bonded assembly, where two silicon chips are interconnected by compression bonding via indium bumps. The total thermal contact area between the chips is 0.306 mm$^2$ and we find that the temperature dependence of the inter-chip thermal resistance follows the power law of $αT^{-3}$, with $α= 7.7-15.4$ K$^4$$μ$m$^2$/nW. The $T^{-3}$ relation indicates phononic interfacial thermal resistance, which is supported by the vanishing contribution of the electrons to the thermal conduction, due to the superconducting interconnections. Such a thermal resistance value can introduce a thermalization bottleneck in particular at cryogenic temperatures. This can be detrimental for some applications, yet it can also be harnessed. We provide an example of both cases by estimating the parasitic overheating of a cryogenic flip-chip assembly operated under various heat loads as well as simulate the performance of solid-state junction microrefrigerators utilizing the observed thermal isolation.
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Submitted 10 October, 2023; v1 submitted 2 March, 2023;
originally announced March 2023.
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Scalable on-chip multiplexing of silicon single and double quantum dots
Authors:
Heorhii Bohuslavskyi,
Alberto Ronzani,
Joel Hätinen,
Arto Rantala,
Andrey Shchepetov,
Panu Koppinen,
Janne S. Lehtinen,
Mika Prunnila
Abstract:
Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers. For this goal, ultra-low-power on-chip cryogenic CMOS (cryo-CMOS) electronics for control, read-out, and interfacing of the qubits is an important milestone. W…
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Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers. For this goal, ultra-low-power on-chip cryogenic CMOS (cryo-CMOS) electronics for control, read-out, and interfacing of the qubits is an important milestone. We report on-chip interfacing of tunable electron and hole QDs by a 64-channel cryo-CMOS multiplexer with less-than-detectable static power dissipation. We analyze charge noise and measure state-of-the-art addition energies and gate lever arm parameters in the QDs. We correlate low noise in QDs and sharp turn-on characteristics in cryogenic transistors, both fabricated with the same gate stack. Finally, we demonstrate that our hybrid quantum-CMOS technology provides a route to scalable interfacing of a large number of QD devices, enabling, for example, variability analysis and QD qubit geometry optimization, which are prerequisites for building large-scale silicon-based quantum computers.
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Submitted 10 October, 2024; v1 submitted 25 August, 2022;
originally announced August 2022.
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Qubit-compatible substrates with superconducting through-silicon vias
Authors:
K. Grigoras,
N. Yurttagül,
J. -P. Kaikkonen,
E. T. Mannila,
P. Eskelinen,
D. P. Lozano,
H. -X. Li,
M. Rommel,
D. Shiri,
N. Tiencken,
S. Simbierowicz,
A. Ronzani,
J. Hätinen,
D. Datta,
V. Vesterinen,
L. Grönberg,
J. Biznárová,
A. Fadavi Roudsari,
S. Kosen,
A. Osman,
M. Prunnila,
J. Hassel,
J. Bylander,
J. Govenius
Abstract:
We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the ar…
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We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.
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Submitted 8 November, 2022; v1 submitted 25 January, 2022;
originally announced January 2022.
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Cascaded superconducting junction refrigerators: optimization and performance limits
Authors:
A. Kemppinen,
A. Ronzani,
E. Mykkänen,
J. Hätinen,
J. S. Lehtinen,
M. Prunnila
Abstract:
We demonstrate highly transparent silicon-vanadium and silicon-aluminum tunnel junctions with relatively low sub-gap leakage current and discuss how a trade-off typically encountered between transparency and leakage affects their refrigeration performance. We theoretically investigate cascaded superconducting tunnel junction refrigerators with two or more refrigeration stages. In particular, we de…
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We demonstrate highly transparent silicon-vanadium and silicon-aluminum tunnel junctions with relatively low sub-gap leakage current and discuss how a trade-off typically encountered between transparency and leakage affects their refrigeration performance. We theoretically investigate cascaded superconducting tunnel junction refrigerators with two or more refrigeration stages. In particular, we develop an approximate method that takes into account self-heating effects but still allows us to optimize the cascade a single stage at a time. We design a cascade consisting of energy-efficient refrigeration stages, which makes cooling of, e.g., quantum devices from above 1 K to below 100 mK a realistic experimental target.
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Submitted 5 August, 2021; v1 submitted 29 September, 2020;
originally announced September 2020.
