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Epitaxial hexagonal boron nitride on Ir(111): A work function template
Authors:
Fabian Schulz,
Robert Drost,
Sampsa K. Hämäläinen,
Thomas Demonchaux,
Ari P. Seitsonen,
Peter Liljeroth
Abstract:
Hexagonal boron nitride (h-BN) is a prominent member in the growing family of two-dimensional materials with potential applications ranging from being an atomically smooth support for other 2D materials to templating growth of molecular layers. We have studied the structure of monolayer h-BN grown by chemical vapour deposition on Ir(111) by low-temperature scanning tunneling microscopy (STM) and s…
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Hexagonal boron nitride (h-BN) is a prominent member in the growing family of two-dimensional materials with potential applications ranging from being an atomically smooth support for other 2D materials to templating growth of molecular layers. We have studied the structure of monolayer h-BN grown by chemical vapour deposition on Ir(111) by low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS) experiments and state-of-the-art density functional theory (DFT) calculations. The lattice-mismatch between the h-BN and Ir(111) surface results in the formation of a moiré superstructure with a periodicity of $\sim$29 Å and a corrugation of $\sim$0.4 Å. By measuring the field emission resonances above the h-BN layer, we find a modulation of the work function within the moiré unit cell of $\sim$0.5 eV. DFT simulations for a 13-on-12 h-BN/Ir(111) unit cell confirm our experimental findings and allow us to relate the change in the work function to the subtle changes in the interaction between boron and nitrogen atoms and the underlying substrate atoms within the moiré unit cell. Hexagonal boron nitride on Ir(111) combines weak topographic corrugation with a strong work function modulation over the moiré unit cell. This makes h-BN/Ir(111) a potential substrate for electronically modulated thin film and hetero-sandwich structures.
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Submitted 14 May, 2014; v1 submitted 29 April, 2014;
originally announced April 2014.
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The Structure and Local Variations of the Graphene Moiré on Ir(111)
Authors:
Sampsa K. Hämäläinen,
Mark P. Boneschanscher,
Peter H. Jacobse,
Ingmar Swart,
Katariina Pussi,
Wolfgang Moritz,
Jouko Lahtinen,
Peter Liljeroth,
Jani Sainio
Abstract:
We have studied the incommensurate moiré structure of epitaxial graphene grown on iridium(111) by dynamic low energy electron diffraction [LEED-I(V)] and non-contact atomic force microscopy (AFM) with a CO terminated tip. Our LEED-I(V) results yield the average positions of all the atoms in the surface unit cell and are in qualitative agreement with the structure obtained from density functional t…
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We have studied the incommensurate moiré structure of epitaxial graphene grown on iridium(111) by dynamic low energy electron diffraction [LEED-I(V)] and non-contact atomic force microscopy (AFM) with a CO terminated tip. Our LEED-I(V) results yield the average positions of all the atoms in the surface unit cell and are in qualitative agreement with the structure obtained from density functional theory (DFT). The AFM experiments reveal local variations of the moiré structure: the corrugation varies smoothly over several moiré unit cells between 42 and 56 pm. We attribute these variations to the varying registry between the moiré symmetry sites and the underlying substrate. We also observe isolated outliers, where the moiré top sites can be offset by an additional 10 pm. This study demonstrates that AFM imaging can be used to directly yield the local surface topography with pm accuracy even on incommensurate 2D structures with varying chemical reactivity.
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Submitted 29 October, 2013;
originally announced October 2013.
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Structural manipulation of the graphene/metal-interface with Ar+ irradiation
Authors:
E. H. Åhlgren,
S. K. Hämäläinen,
O. Lehtinen,
P. Liljeroth,
J. Kotakoski
Abstract:
Controlled defect creation is a prerequisite for the detailed study of disorder effects in materials. Here, we irradiate a graphene/Ir(111)-interface with low-energy Ar+ to study the induced structural changes. Combining computer simulations and scanning-probe microscopy, we show that the resulting disorder manifests mainly in the forms of intercalated metal adatoms and vacancy-type defects in gra…
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Controlled defect creation is a prerequisite for the detailed study of disorder effects in materials. Here, we irradiate a graphene/Ir(111)-interface with low-energy Ar+ to study the induced structural changes. Combining computer simulations and scanning-probe microscopy, we show that the resulting disorder manifests mainly in the forms of intercalated metal adatoms and vacancy-type defects in graphene. One prominent feature at higher irradiation energies (from 1 keV up) is the formation of line-like depressions, which consist of sequential graphene defects created by the ion channeling within the interface -- much like a stone skipping on water. Lower energies result in simpler defects, down to 100 eV where more than one defect in every three is a graphene single vacancy.
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Submitted 7 October, 2013;
originally announced October 2013.
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Topographic and electronic contrast of the graphene moiré on Ir(111) probed by scanning tunneling microscopy and non-contact atomic force microscopy
Authors:
Zhixiang Sun,
Sampsa K. Hämäläinen,
Jani Sainio,
Jouko Lahtinen,
Daniël Vanmaekelbergh,
Peter Liljeroth
Abstract:
Epitaxial graphene grown on transition metal surfaces typically exhibits a moiré pattern due to the lattice mismatch between graphene and the underlying metal surface. We use both scanning tunneling microscopy (STM) and atomic force microscopy (AFM) experiments to probe the electronic and topographic contrast of the graphene moiré on the Ir(111) surface. While STM topography is influenced by the l…
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Epitaxial graphene grown on transition metal surfaces typically exhibits a moiré pattern due to the lattice mismatch between graphene and the underlying metal surface. We use both scanning tunneling microscopy (STM) and atomic force microscopy (AFM) experiments to probe the electronic and topographic contrast of the graphene moiré on the Ir(111) surface. While STM topography is influenced by the local density of states close to the Fermi energy and the local tunneling barrier height, AFM is capable of yielding the 'true' surface topography once the background force arising from the van der Waals (vdW) interaction between the tip and the substrate is taken into account. We observe a moiré corrugation of 35$\pm$10 pm, where the graphene-Ir(111) distance is the smallest in the areas where the graphene honeycomb is atop the underlying iridium atoms and larger on the fcc or hcp threefold hollow sites.
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Submitted 17 January, 2011; v1 submitted 17 November, 2010;
originally announced November 2010.