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Electron and Hole Photoemission Detection for Band Offset Determination of Tunnel Field-Effect Transistor Heterojunctions
Authors:
Wei Li,
Qin Zhang,
R. Bijesh,
Oleg A. Kirillov,
Yiran Liang,
Igor Levin,
Lian-Mao Peng,
Curt A. Richter,
Xuelei Liang,
S. Datta,
David J. Gundlach,
N. V. Nguyen
Abstract:
The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands align at the heterojunction interface. We report here on experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect t…
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The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands align at the heterojunction interface. We report here on experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode in a traditional internal photoemission measurement, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al2O3/InAs/GaSb layer structure, the barrier height from the top of InAs and GaSb valence band to the bottom of Al2O3 conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of Al2O3 valence band to the bottom of InAs and GaSb conduction band. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted model of electron quantum tunneling efficiency and transistor performance.
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Submitted 4 October, 2014;
originally announced October 2014.
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Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide
Authors:
Wei Li,
A. Glen Birdwell,
Matin Amani,
Robert A. Burke,
Xi Ling,
Yi-Hsien Lee,
Xuelei Liang,
Lianmao Peng,
Curt A. Richter,
Jing Kong,
David J. Gundlach,
N. V. Nguyen
Abstract:
Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a…
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Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS2 that shifts to 1.83 eV in monolayer MoS2. We extracted the high precision dielectric function up to 9.0 eV which leads to the identification of many unique interband transitions at high symmetry points in the MoS2 momentum space. The positions of the A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation. A very strong optical critical point predicted to correspond to a quasi-particle gap is observed at 2.86 eV, which is attributed to optical transitions along the parallel bands between the M and gama points in the reduced Brillouin zone. The absence of the bulk MoS2 spin-orbit interaction peak at ~ 3.0 eV in monolayer MoS2 is, as predicted, the consequence of the coalescence of nearby excitons. A higher energy optical transition at 3.98 eV, commonly occurred in bulk semiconductors, is associated with a combination of several critical points.These optical transitions herein reported enhance our understanding of monolayer MoS2 as well as of two-dimensional systems in general, and thus provide informative guidelines for MoS2 optical device designs and theoretical considerations.
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Submitted 25 July, 2014;
originally announced July 2014.
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Highly reproducible metal/graphene contacts and stable electrical performance by UV-Ozone treatment
Authors:
Wei Li,
Christina A. Hacker,
Yiran Liang,
Curt A. Richter,
David J. Gundlach,
Xuelei Liang,
Lianmao Peng
Abstract:
Resist residue from the device fabrication process is a general and significant source of the metal/graphene contact interface contamination. In this paper, Ultraviolet-Ozone (UVO) treatment is proven to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices, which were fabricated by using UVO treatment of the metal/graphene contact region, show that stabl…
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Resist residue from the device fabrication process is a general and significant source of the metal/graphene contact interface contamination. In this paper, Ultraviolet-Ozone (UVO) treatment is proven to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices, which were fabricated by using UVO treatment of the metal/graphene contact region, show that stable and highly reproducible low contact resistance between metal and graphene is obtained without affecting the electrical properties of the graphene channel itself.
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Submitted 29 May, 2013; v1 submitted 6 March, 2013;
originally announced March 2013.
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Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide
Authors:
Rusen Yan,
Qin Zhang,
Oleg A. Kirillov,
Wei Li,
James Basham,
Alex Boosalis,
Xuelei Liang,
Debdeep Jena,
Curt A. Richter,
Alan Seabaugh,
David J. Gundlach,
Huili G. Xing,
N. V. Nguyen
Abstract:
The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the direct observation of both electron and hole injections at a Si/Al2O3 interface and successfully overcoming the long-standing difficulty of detectin…
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The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the direct observation of both electron and hole injections at a Si/Al2O3 interface and successfully overcoming the long-standing difficulty of detecting holes injected from a semiconductor emitter in IPE measurements. The observed electron and hole barrier heights are 3.5 eV and 4.1 eV, respectively. Thus the bandgap of Al2O3 can be further deduced to be 6.5 eV, in close agreement with the valued obtained by vacuum ultraviolet spectroscopic ellipsometry analysis. The detailed optical modeling of a graphene/Al2O3/Si stack reveals that by using graphene in IPE measurements the carrier injection from the emitter is significantly enhanced and the contribution of carrier injection from the collector electrode is minimal. The method can be readily extended to various IPE test structures for a complete band alignment analysis and interface characterization.
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Submitted 5 August, 2013; v1 submitted 20 December, 2012;
originally announced December 2012.
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UV/Ozone treatment to reduce metal-graphene contact resistance
Authors:
Wei Li,
Yiran Liang,
Dangmin Yu,
Lianmao Peng,
Kurt P. Pernstich,
Tian Shen,
A. R. Hight Walker,
Guangjun Cheng,
Christina A. Hacker,
Curt A. Richter,
Qiliang Li,
David J. Gundlach,
Xuelei Liang
Abstract:
We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was foun…
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We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl methacrylate) (PMMA) and photoresist. Our control experiment shows that exposure times up to 10 minutes did not introduce significant disorder in the graphene as characterized by Raman spectroscopy. By using the described approach, contact resistance of less than 200 Ω μm was achieved, while not significantly altering the electrical properties of the graphene channel region of devices.
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Submitted 4 December, 2012;
originally announced December 2012.
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High charge-carrier mobility and low trap density in a rubrene derivative
Authors:
S. Haas,
A. F. Stassen,
G. Schuck,
K. P. Pernstich,
D. J. Gundlach,
B. Batlogg,
U. Berens,
H. -J. Kirner
Abstract:
We have synthesized, crystallized and studied the structural and electric transport properties of organic molecular crystals based on a rubrene derivative with {\em t}-butyl sidegroups at the 5,11 positions. Two crystalline modifications are observed: one (A) distinct from that of rubrene with larger spacings between the naphtacene backbones, the other (B) with a in-plane structure presumably ve…
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We have synthesized, crystallized and studied the structural and electric transport properties of organic molecular crystals based on a rubrene derivative with {\em t}-butyl sidegroups at the 5,11 positions. Two crystalline modifications are observed: one (A) distinct from that of rubrene with larger spacings between the naphtacene backbones, the other (B) with a in-plane structure presumably very similar compared to rubrene. The electric transport properties reflect the different structures: in the latter phase (B) the in-plane hole mobility of 12 cm$^2$/Vs measured on single crystal FETs is just as high as in rubrene crystals, while in the A phase no field-effect could be measured. The high crystal quality, studied in detail for B, reflects itself in the density of gap states: The deep-level trap density as low as $10^{15}$ cm$^{-3}$ eV$^{-1}$ has been measured, and an exponential band tail with a characteristic energy of 22 meV is observed. The bulk mobility perpendicular to the molecular planes is estimated to be of order of $10^{-3}$ -- $10^{-1}$ cm$^2$/Vs.
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Submitted 3 July, 2007;
originally announced July 2007.
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Density of bulk trap states in organic semiconductor crystals: discrete levels induced by oxygen in rubrene
Authors:
C. Krellner,
S. Haas,
C. Goldmann,
K. P. Pernstich,
D. J. Gundlach,
B. Batlogg
Abstract:
The density of trap states in the bandgap of semiconducting organic single crystals has been measured quantitatively and with high energy resolution by means of the experimental method of temperature-dependent space-charge-limited-current spectroscopy (TD-SCLC). This spectroscopy has been applied to study bulk rubrene single crystals, which are shown by this technique to be of high chemical and…
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The density of trap states in the bandgap of semiconducting organic single crystals has been measured quantitatively and with high energy resolution by means of the experimental method of temperature-dependent space-charge-limited-current spectroscopy (TD-SCLC). This spectroscopy has been applied to study bulk rubrene single crystals, which are shown by this technique to be of high chemical and structural quality. A density of deep trap states as low as ~ 10^{15} cm^{-3} is measured in the purest crystals, and the exponentially varying shallow trap density near the band edge could be identified (1 decade in the density of states per ~25 meV). Furthermore, we have induced and spectroscopically identified an oxygen related sharp hole bulk trap state at 0.27 eV above the valence band.
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Submitted 19 June, 2007; v1 submitted 24 April, 2007;
originally announced April 2007.
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Evidence of Water-related Discrete Trap State Formation in Pentacene Single Crystal Field-Effect Transistors
Authors:
C. Goldmann,
D. J. Gundlach,
B. Batlogg
Abstract:
We report on the generation of a discrete trap state during negative gate bias stress in pentacene single crystal "flip-crystal" field-effect transistors with a SiO2 gate dielectric. Trap densities of up to 2*10^12 cm^-2 were created in the experiments. Trap formation and trap relaxation are distinctly different above and below ~280 K. In devices in which a self-assembled monolayer on top of the…
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We report on the generation of a discrete trap state during negative gate bias stress in pentacene single crystal "flip-crystal" field-effect transistors with a SiO2 gate dielectric. Trap densities of up to 2*10^12 cm^-2 were created in the experiments. Trap formation and trap relaxation are distinctly different above and below ~280 K. In devices in which a self-assembled monolayer on top of the SiO2 provides a hydrophobic insulator surface we do not observe trap formation. These results indicate the microscopic cause of the trap state to be water adsorbed on the SiO2 surface.
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Submitted 25 November, 2005; v1 submitted 25 August, 2005;
originally announced August 2005.
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Threshold Voltage Shift in Organic Field Effect Transistors by Dipole-Monolayers on the Gate Insulator
Authors:
K. P. Pernstich,
A. N. Rashid,
S. Haas,
G. Schitter,
D. Oberhoff,
C. Goldmann,
D. J. Gundlach,
B. Batlogg
Abstract:
We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self assembled monolayer…
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We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self assembled monolayer (SAM). The observed shift of the transfer characteristics range from -2 to 50 V and can be related to the surface potential of the layer next to the transistor channel. Concomitantly the mobile charge carrier concentration at zero gate bias reaches up to 4*10^12/cm^2. In the single crystal FETs the measured transfer characteristics are also shifted, while essentially maintaining the high quality of the subthreshold swing. The shift of the transfer characteristics is governed by the built-in electric field of the SAM and can be explained using a simple energy level diagram. In the thin film devices, the subthreshold region is broadened, indicating that the SAM creates additional trap states, whose density is estimated to be of order 1*10^12/cm^2.
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Submitted 1 October, 2004;
originally announced October 2004.
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Hole mobility in organic single crystals measured by a "flip-crystal" field-effect technique
Authors:
C. Goldmann,
S. Haas,
C. Krellner,
K. P. Pernstich,
D. J. Gundlach,
B. Batlogg
Abstract:
We report on single crystal high mobility organic field-effect transistors (OFETs) prepared on prefabricated substrates using a "flip-crystal" approach. This method minimizes crystal handling and avoids direct processing of the crystal that may degrade the FET electrical characteristics. A chemical treatment process for the substrate ensures a reproducible device quality. With limited purificati…
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We report on single crystal high mobility organic field-effect transistors (OFETs) prepared on prefabricated substrates using a "flip-crystal" approach. This method minimizes crystal handling and avoids direct processing of the crystal that may degrade the FET electrical characteristics. A chemical treatment process for the substrate ensures a reproducible device quality. With limited purification of the starting materials, hole mobilities of 10.7, 1.3, and 1.4 cm^2/Vs have been measured on rubrene, tetracene, and pentacene single crystals, respectively. Four-terminal measurements allow for the extraction of the "intrinsic" transistor channel resistance and the parasitic series contact resistances. The technique employed in this study shows potential as a general method for studying charge transport in field-accumulated carrier channels near the surface of organic single crystals.
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Submitted 8 March, 2004;
originally announced March 2004.
