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Large magnetoresistance by Pauli blockade in hydrogenated graphene
Authors:
J. Guillemette,
N. Hemsworth,
A. Vlasov,
J. Kirman,
F. Mahvash,
P. L. Lévesque,
M. Siaj,
R. Martel,
G. Gervais,
S. Studenikin,
A. Sachrajda,
T. Szkopek
Abstract:
We report the observation of a giant positive magnetoresistance in millimetre scale hydrogenated graphene with magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200\% at a temperature of 300 mK was observed in this configuration, reverting to negative magnetoresistance with the magnetic field oriented normal to the graphene plane. We attribute th…
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We report the observation of a giant positive magnetoresistance in millimetre scale hydrogenated graphene with magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200\% at a temperature of 300 mK was observed in this configuration, reverting to negative magnetoresistance with the magnetic field oriented normal to the graphene plane. We attribute the observed positive, in-plane, magnetoresistance to Pauli-blockade of hopping conduction induced by spin polarization. Our work shows that spin polarization in concert with electron-electron interaction can play a dominant role in magnetotransport within an atomic monolayer.
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Submitted 22 February, 2018;
originally announced February 2018.
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Magnetic refrigeration with paramagnetic semiconductors at cryogenic temperatures
Authors:
A. Vlasov,
J. Guillemette,
G. Gervais,
T. Szkopek
Abstract:
We propose paramagnetic semiconductors as active media for refrigeration at cryogenic temperatures by adiabatic demagnetization. The paramagnetism of impurity dopants or structural defects can provide the entropy necessary for refrigeration at cryogenic temperatures. We present a simple model for the theoretical limitations to specific entropy and cooling power achievable by demagnetization of var…
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We propose paramagnetic semiconductors as active media for refrigeration at cryogenic temperatures by adiabatic demagnetization. The paramagnetism of impurity dopants or structural defects can provide the entropy necessary for refrigeration at cryogenic temperatures. We present a simple model for the theoretical limitations to specific entropy and cooling power achievable by demagnetization of various semiconductor systems. Performance comparable to that of the hydrate (CMN) is predicted.
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Submitted 1 June, 2017;
originally announced June 2017.
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Measurement of Topological Berry Phase in Highly Disordered Graphene
Authors:
K. Bennaceur,
J. Guillemette,
P. L. Lévesque,
N. Cottenye,
F. Mahvash,
N. Hemsworth,
A. Kumar,
Y. Murata,
S. Heun,
M. O. Goerbig,
C. Proust,
M. Siaj,
R. Martel,
G. Gervais,
T. Szkopek
Abstract:
We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $\approx 0.1\%$. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against…
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We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $\approx 0.1\%$. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against introduction of disorder by hydrogenation in large scale graphene.
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Submitted 12 October, 2015;
originally announced October 2015.
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Quantum Hall Effect in Hydrogenated Graphene
Authors:
J. Guillemette,
S. S. Sabri,
B. Wu,
K. Bennaceur,
P. E. Gaskell,
M. Savard,
P. L. Lévesque,
F. Mahvash,
A. Guermoune,
M. Siaj,
R. Martel,
T. Szkopek,
G. Gervais
Abstract:
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter $(k_{F}λ)^{-1}\gg1$. In zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of order of $250 h/e^2$. Application of a…
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The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter $(k_{F}λ)^{-1}\gg1$. In zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of order of $250 h/e^2$. Application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of $h/2e^{2}$ at 45T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed.
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Submitted 7 January, 2013;
originally announced January 2013.
