Showing 1–40 of 40 results for author: Guha, S

Feedback controlled microengine powered by motor protein

Authors: Suraj Deshmukh, Basudha Roy, Sougata Guha, Shivprasad Patil, Arnab Saha, Sudipto Muhuri

Abstract: We present a template for realization of a novel microengine which is able to harness and convert the activity driven movement of individual motor protein into work output of the system. This engine comprises of a micron size bead-motor protein complex that is subject to a time-varying, feedback controlled optical potential, and a driving force due to the action of the motor protein which stochast… ▽ More We present a template for realization of a novel microengine which is able to harness and convert the activity driven movement of individual motor protein into work output of the system. This engine comprises of a micron size bead-motor protein complex that is subject to a time-varying, feedback controlled optical potential, and a driving force due to the action of the motor protein which stochastically binds, walks and unbinds to an underlying microtubule filament. Using a Stochastic thermodynamics framework and theoretical modeling of bead-motor transport in a harmonic optical trap potential, we obtain the engine characteristics, e.g., work output per cycle, power generated, efficiency and the probability distribution function of the work output as a function of motor parameters and optical trap stiffness. The proposed engine is a work-to-work converter. Remarkably, the performance of this engine can vastly supersede the performance of other microengines that have been realized so far for feasible biological parameter range for kinesin-1 and kinesin-3 motor proteins. In particular, the work output per cycle is ~ (10-15) k_b T while the power output is (5-8) k_b T s^{-1}. Furthermore, we find that even with time delay in feedback protocol, the performance of the engine remains robust as long as the delay time is much smaller than the Brownian relaxation time of the micron size bead. Indeed such low delay time in feedback in the optical trap setup can easily be achieved with current Infrared (IR) lasers and optical trap sensor. The average work output and power output of the engine, exhibits interesting non-monotonic dependence on motor velocity and optical trap stiffness. As such this motor protein driven microengine can be a promising potential prototype for fabricating an actual microdevice engine which can have practical utility. △ Less

Submitted 10 April, 2025; v1 submitted 10 March, 2025; originally announced March 2025.

Comments: 18 pages, 8 figures

Quantum limited imaging of a nanomechanical resonator with a spatial mode sorter

Authors: Morgan Choi, Christian Pluchar, Wenhua He, Saikat Guha, Dalziel Wilson

Abstract: We explore the use of a spatial mode sorter to image a nanomechanical resonator, with the goal of studying the quantum limits of active imaging and extending the toolbox for optomechanical force sensing. In our experiment, we reflect a Gaussian laser beam from a vibrating nanoribbon and pass the reflected beam through a commercial spatial mode demultiplexer (Cailabs Proteus). The intensity in each… ▽ More We explore the use of a spatial mode sorter to image a nanomechanical resonator, with the goal of studying the quantum limits of active imaging and extending the toolbox for optomechanical force sensing. In our experiment, we reflect a Gaussian laser beam from a vibrating nanoribbon and pass the reflected beam through a commercial spatial mode demultiplexer (Cailabs Proteus). The intensity in each demultiplexed channel depends on the mechanical mode shapes and encodes information about their displacement amplitudes. As a concrete demonstration, we monitor the angular displacement of the ribbon's fundamental torsion mode by illuminating in the fundamental Hermite-Gauss mode (HG$_{00}$) and reading out in the HG$_{01}$ mode. We show that this technique permits readout of the ribbon's torsional vibration with a precision near the quantum limit. Our results highlight new opportunities at the interface of quantum imaging and quantum optomechanics. △ Less

Submitted 7 November, 2024; originally announced November 2024.

Comments: 8 pages, 5 figures

Low-Dimensional Solid-State Single-Photon Emitters

Authors: Jinli Chen, Chaohan Cui, Ben Lawrie, Yongzhou Xue, Saikat Guha, Matt Eichenfield, Huan Zhao, Xiaodong Yan

Abstract: Solid-state single-photon emitters (SPEs) are attracting significant attention as fundamental components in quantum computing, communication, and sensing. Low-dimensional materials-based SPEs (LD-SPEs) have drawn particular interest due to their high photon extraction efficiency, ease of integration with photonic circuits, and strong coupling with external fields. The accessible surfaces of LD mat… ▽ More Solid-state single-photon emitters (SPEs) are attracting significant attention as fundamental components in quantum computing, communication, and sensing. Low-dimensional materials-based SPEs (LD-SPEs) have drawn particular interest due to their high photon extraction efficiency, ease of integration with photonic circuits, and strong coupling with external fields. The accessible surfaces of LD materials allow for deterministic control over quantum light emission, while enhanced quantum confinement and light-matter interactions improve photon emissive properties. This review examines recent progress in LDSPEs across four key materials: zero-dimensional (0D) semiconductor quantum dots, one-dimensional (1D) nanotubes, two-dimensional (2D) materials, including hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs). We explore their structural and photophysical properties, along with techniques such as spectral tuning and cavity coupling that enhance SPE performance. Finally, we address future challenges and suggest strategies for optimizing LD-SPEs for practical quantum applications. △ Less

Submitted 29 October, 2024; originally announced October 2024.

The Role of the Dopant in the Electronic Structure of Erbium-Doped \ch{TiO2} for Quantum Emit

Authors: Jessica B. Martins, G. Grant, D. Haskel, G. E. Sterbinsky, I. Masiulionis, K. Sautter, E. Karapetrova, S. Guha, J. W. Freeland

Abstract: Erbium-doped \ch{TiO2} materials are promising candidates for advancing quantum technologies, necessitating a thorough understanding of their electronic and crystal structures to tailor their properties and enhance coherence times. This study explored epitaxial erbium-doped rutile \ch{TiO2} films deposited on r-sapphire substrates using molecular beam epitaxy. Photoluminescence excitation spectros… ▽ More Erbium-doped \ch{TiO2} materials are promising candidates for advancing quantum technologies, necessitating a thorough understanding of their electronic and crystal structures to tailor their properties and enhance coherence times. This study explored epitaxial erbium-doped rutile \ch{TiO2} films deposited on r-sapphire substrates using molecular beam epitaxy. Photoluminescence excitation spectroscopy demonstrated decreasing fluorescence lifetimes with erbium doping, indicating limited coherence times. Lattice distortions associated with \ch{Er^{3+}} were probed by X-ray absorption spectroscopy, indicating that erbium primarily occupies \ch{Ti^{4+}} sites and influences oxygen vacancies. Significant lattice distortions in the higher-order shells and full coordination around erbium suggest that additional defects are likely prevalent in these regions. These findings indicate that defects contribute to limited coherence times by introducing alternative decay pathways, leading to shorter fluorescence lifetimes. △ Less

Submitted 28 September, 2024; originally announced September 2024.

Comments: 8 pages, 13 figures, 3 tables

Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering

Authors: Pengxiang Zhang, Wilfried Haensch, Charudatta M. Phatak, Supratik Guha

Abstract: We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the multi-bit capability of a magnetic tunnel junction. The magnetic free layer of the memory device has perpendicular magnetic anisotropy and interfacial Dzyalosh… ▽ More We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the multi-bit capability of a magnetic tunnel junction. The magnetic free layer of the memory device has perpendicular magnetic anisotropy and interfacial Dzyaloshinskii-Moriya interaction, so that spin-orbit torques induce efficient domain wall motion. Using micromagnetic simulations, we find two pinning mechanisms that lead to different cell designs: two-way switching and four-way switching. The memory cell design choices and the physics behind these pinning mechanisms are discussed in detail. Furthermore, we show that switching reliability and speed may be significantly improved by replacing the ferromagnetic free layer with a synthetic antiferromagnetic layer. Switching behavior and material choices will be discussed for the two implementations. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Comments: 24 pages

Direct imaging of asymmetric interfaces and electrostatic potentials inside a hafnia-zirconia ferroelectric nanocapacitor

Authors: Daniel B Durham, Manifa Noor, Khandker Akif Aabrar, Yuzi Liu, Suman Datta, Kyeongjae Cho, Supratik Guha, Charudatta Phatak

Abstract: In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing such as oxygen vacancy formation and interfacial reactions appear to strongly affect device performance. However, the nanoscale structure, chemistry, and electrical potentials in these devices are not fully known, making it difficult to understand their influence on device properties. Here, we directly… ▽ More In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing such as oxygen vacancy formation and interfacial reactions appear to strongly affect device performance. However, the nanoscale structure, chemistry, and electrical potentials in these devices are not fully known, making it difficult to understand their influence on device properties. Here, we directly image the composition and electrostatic potential with nanometer resolution in the cross section of a nanocrystalline W / Hf$_{0.5}$Zr$_{0.5}$O$_{2-δ}$ (HZO) / W ferroelectric capacitor using multimodal electron microscopy. This reveals a 1.4 nm wide tungsten sub-oxide interfacial layer formed at the bottom interface during fabrication which introduces a potential dip and leads to asymmetric switching fields. Additionally, the measured inner potential in HZO is consistent with the presence of about 20% oxygen vacancies and a negative built-in potential in HZO. These chemical and electrostatic details are important to characterize and tune to achieve high performance ferroelectric devices. △ Less

Submitted 19 May, 2024; originally announced May 2024.

Comments: 20 pages, 3 figures, 1 table, 3 supporting figures

Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates

Authors: Connor P Horn, Christina Wicker, Antoni Wellisz, Cyrus Zeledon, Pavani Vamsi Krishna Nittala, F Joseph Heremans, David D Awschalom, Supratik Guha

Abstract: We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal candidate for high-temperature, high-voltage power electronic devices. Moreover, 4H-SiC has been shown to be an ex… ▽ More We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal candidate for high-temperature, high-voltage power electronic devices. Moreover, 4H-SiC has been shown to be an excellent host of solid-state atomic defect qubits for quantum computing and quantum networking. Because 4H-SiC single crystal substrates are expensive (due to long growth times and limited yield), techniques for removal and transfer of bulk-quality films in the tens-of-microns thickness range are highly desirable to allow for substrate reuse and integration of the separated films. In this work we utilize novel approaches for stressor layer thickness control and spalling crack initiation to demonstrate controlled spalling of 4H-SiC, the highest fracture toughness material spalled to date. Additionally, we demonstrate substrate re-use, bonding of the spalled films to carrier substrates, and explore the spin coherence of the spalled films. In preliminary studies we are able to achieve coherent spin control of neutral divacancy ($VV^{0}$) qubit ensembles and measure a quasi-bulk spin $T_{2}$ of 79.7 $μ$s in such spalled films. △ Less

Submitted 30 June, 2024; v1 submitted 30 April, 2024; originally announced April 2024.

Comments: 16 pages, 6 figures

Journal ref: ACS Nano, 18, 31381-31389 (2024)

Cryogenic hybrid magnonic circuits based on spalled YIG thin films

Authors: Jing Xu, Connor Horn, Yu Jiang, Amin Pishehvar, Xinhao Li, Daniel Rosenmann, Xu Han, Miguel Levy, Supratik Guha, Xufeng Zhang

Abstract: Yttrium iron garnet (YIG) magnonics has garnered significant research interest because of the unique properties of magnons (quasiparticles of collective spin excitation) for signal processing. In particular, hybrid systems based on YIG magnonics show great promise for quantum information science due to their broad frequency tunability and strong compatibility with other platforms. However, their b… ▽ More Yttrium iron garnet (YIG) magnonics has garnered significant research interest because of the unique properties of magnons (quasiparticles of collective spin excitation) for signal processing. In particular, hybrid systems based on YIG magnonics show great promise for quantum information science due to their broad frequency tunability and strong compatibility with other platforms. However, their broad applications have been severely constrained by substantial microwave loss in the gadolinium gallium garnet (GGG) substrate at cryogenic temperatures. In this study, we demonstrate that YIG thin films can be spalled from YIG/GGG samples. Our approach is validated by measuring hybrid devices comprising superconducting resonators and spalled YIG films, which exhibits anti-crossing features that indicate strong coupling between magnons and microwave photons. Such new capability of separating YIG thin films from GGG substrates via spalling, and the integrated superconductor-YIG devices represent a significant advancement for integrated magnonic devices, paving the way for advanced magnon-based coherent information processing. △ Less

Submitted 18 December, 2024; v1 submitted 17 December, 2023; originally announced December 2023.

Comments: 6 pages, 4 figures

Stereochemically Active Lone-pair Leads to Strong Birefringence in the Vacancy Ordered Cs3Sb2Cl9 Perovskite Single Crystals

Authors: Shramana Guha, Amit Dalui, Piyush Kanti Sarkar, Sima Roy, Atanu Paul, Sujit Kamilya, Abhishake Mondal, Indra Dasgupta, D. D. Sarma, Somobrata Acharya

Abstract: Stereochemically active lone-pair (SCALP) cations are attractive units for realizing optical anisotropy. Antimony (III) chloride perovskites with SCALP have remained largely unknown till date. We synthesized vacancy ordered Cs3Sb2Cl9 perovskite single crystals with SbCl6 octahedral linkage containing SCALP. Remarkably, Cs3Sb2Cl9 single crystals exhibit an exceptional birefringence of 0.12 +(-) 0.0… ▽ More Stereochemically active lone-pair (SCALP) cations are attractive units for realizing optical anisotropy. Antimony (III) chloride perovskites with SCALP have remained largely unknown till date. We synthesized vacancy ordered Cs3Sb2Cl9 perovskite single crystals with SbCl6 octahedral linkage containing SCALP. Remarkably, Cs3Sb2Cl9 single crystals exhibit an exceptional birefringence of 0.12 +(-) 0.01 at 550 nm, which is the largest among pristine all-inorganic halide perovskites. The SCALP brings a large local structural distortion of the SbCl6 octahedra promoting birefringence optical responses in Cs3Sb2Cl9 single crystals. Theoretical calculations reveal that the considerable hybridization of Sb 5s with Sb 5p and Cl 3p states largely contribute to the SCALP. Furthermore, the change in the Sb-Cl-Sb bond angle creates distortion in the SbCl6 octahedral arrangement in the apical and equatorial directions within the crystal structure incorporating the required anisotropy for the birefringence. This work explores pristine inorganic halide perovskite single crystals as a potential birefringent material with prospects in integrated optical devices. △ Less

Submitted 3 December, 2023; originally announced December 2023.

Optical and microstructural characterization of Er$^{3+}$ doped epitaxial cerium oxide on silicon

Authors: Gregory D. Grant, Jiefei Zhang, Ignas Masiulionis, Swarnabha Chattaraj, Kathryn E. Sautter, Sean E. Sullivan, Rishi Chebrolu, Yuzi Liu, Jessica B. Martins, Jens Niklas, Alan M. Dibos, Sumit Kewalramani, John W. Freeland, Jianguo Wen, Oleg G. Poluektov, F. Joseph Heremans, David D. Awschalom, Supratik Guha

Abstract: Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies such as quantum memory, due to the intrinsic spin-photon interface of the rare-earth ion combined with the integration methods available in the solid-state. Erbium-doped cerium oxide (Er:CeO$_2$) is a particularly promising platform for such a quantum memory, as it combines the telecom-wavelengt… ▽ More Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies such as quantum memory, due to the intrinsic spin-photon interface of the rare-earth ion combined with the integration methods available in the solid-state. Erbium-doped cerium oxide (Er:CeO$_2$) is a particularly promising platform for such a quantum memory, as it combines the telecom-wavelength (~1.5 $μ$m) 4f-4f transition of erbium, a predicted long electron spin coherence time supported by CeO$_2$, and is also near lattice-matched to silicon for heteroepitaxial growth. In this work, we report on the epitaxial growth of Er:CeO$_2$ thin films on silicon using molecular beam epitaxy (MBE), with controlled erbium concentration down to 2 parts per million (ppm). We carry out a detailed microstructural study to verify the CeO$_2$ host structure, and characterize the spin and optical properties of the embedded Er$^{3+}$ ions. In the 2-3 ppm Er regime, we identify EPR linewidths of 245(1) MHz, optical inhomogeneous linewidths of 9.5(2) GHz, optical excited state lifetimes of 3.5(1) ms, and spectral diffusion-limited homogenoeus linewidths as narrow as 4.8(3) MHz in the as-grown material. We test annealing of the Er:CeO$_2$ films up to 900 deg C, which yields modest narrowing of the inhomogeneous linewidth by 20% and extension of the excited state lifetime by 40%. We have also studied the variation of the optical properties as a function of Er doping and find that the results are consistent with the trends expected from inter-dopant charge interactions. △ Less

Submitted 28 September, 2023; originally announced September 2023.

Comments: 15 pages, 6 figures (including supplemental information)

Nanocavity-mediated Purcell enhancement of Er in TiO$_2$ thin films grown via atomic layer deposition

Authors: Cheng Ji, Michael T. Solomon, Gregory D. Grant, Koichi Tanaka, Muchuan Hua, Jianguo Wen, Sagar K. Seth, Connor P. Horn, Ignas Masiulionis, Manish K. Singh, Sean E. Sullivan, F. Joseph Heremans, David D. Awschalom, Supratik Guha, Alan M. Dibos

Abstract: The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber… ▽ More The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO$_2$) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping control over the Er concentration. Even though the as-grown films are amorphous, after oxygen annealing they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO$_2$. Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (300) of their optical lifetime. Our findings demonstrate a low-temperature, non-destructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high doping densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories. △ Less

Submitted 23 September, 2023; originally announced September 2023.

Comments: 5 figures

Nanosecond electron imaging of transient electric fields and material response

Authors: Thomas E Gage, Daniel B Durham, Haihua Liu, Supratik Guha, Ilke Arslan, Charudatta Phatak

Abstract: Electrical pulse stimulation drives many important physical phenomena in condensed matter as well as in electronic systems and devices. Often, nanoscopic and mesoscopic mechanisms are hypothesized, but methods to image electrically driven dynamics on both their native length and time scales have so far been largely undeveloped. Here, we present an ultrafast electron microscopy approach that uses e… ▽ More Electrical pulse stimulation drives many important physical phenomena in condensed matter as well as in electronic systems and devices. Often, nanoscopic and mesoscopic mechanisms are hypothesized, but methods to image electrically driven dynamics on both their native length and time scales have so far been largely undeveloped. Here, we present an ultrafast electron microscopy approach that uses electrical pulses to induce dynamics and records both the local time-resolved electric field and corresponding material behavior with nanometer-nanosecond spatiotemporal resolution. Quantitative measurement of the time-dependent field via the electron beam deflection is demonstrated by recording the field between two electrodes with single-ns temporal resolution. We then show that this can be applied in a material by correlating applied field with resulting dynamics in TaS$_{2}$. First, time-resolved electron diffraction is used to simultaneously record the electric field and crystal structure change in a selected region during a 20 ns voltage pulse, showing how a charge density wave transition evolves during and after the applied field. Then, time-resolved nanoimaging is demonstrated, revealing heterogeneous distortions that occur in the freestanding flake during a longer, lower amplitude pulse. Altogether, these results pave the way for future experiments that will uncover the nanoscale dynamics underlying electrically driven phenomena. △ Less

Submitted 1 June, 2023; originally announced June 2023.

Comments: Main article: 7 pages, 3 figures. Supplemental Material: 8 pages, 7 figures

Nature of barriers determine first passage times in heterogeneous media

Authors: Moumita Dasgupta, Sougata Guha, Leon Armbruster, Dibyendu Das, Mithun K. Mitra

Abstract: Intuition suggests that passage times across a region increases with the number of barriers along the path. Can this fail depending on the nature of the barrier? To probe this fundamental question, we exactly solve for the first passage time in general d-dimensions for diffusive transport through a spatially patterned array of obstacles - either entropic or energetic, depending on the nature of th… ▽ More Intuition suggests that passage times across a region increases with the number of barriers along the path. Can this fail depending on the nature of the barrier? To probe this fundamental question, we exactly solve for the first passage time in general d-dimensions for diffusive transport through a spatially patterned array of obstacles - either entropic or energetic, depending on the nature of the obstacles. For energetic barriers, we show that first passage times vary non-monotonically with the number of barriers, while for entropic barriers it increases monotonically. This non-monotonicity for energetic barriers further reflects in the behaviour of effective diffusivity as well. We then design a simple experiment where a robotic bug navigates a heterogeneous environment through a spatially patterned array of obstacles to validate our predictions. Finally, using numerical simulations, we show that this non-monotonic behaviour for energetic barriers is general and extends to even super-diffusive transport. △ Less

Submitted 30 July, 2024; v1 submitted 24 November, 2022; originally announced November 2022.

Theoretical analysis of cargo transport by catch bonded motors in optical trapping assays

Authors: Naren Sundararajan, Sougata Guha, Sudipto Muhuri, Mithun K. Mitra

Abstract: Dynein motors exhibit catch bonding, where the unbinding rate of the motors from microtubule filaments decreases with increasing opposing load. The implications of this catch bond on the transport properties of dynein-driven cargo are yet to be fully understood. In this context, optical trapping assays constitute an important means of accurately measuring the forces generated by molecular motor pr… ▽ More Dynein motors exhibit catch bonding, where the unbinding rate of the motors from microtubule filaments decreases with increasing opposing load. The implications of this catch bond on the transport properties of dynein-driven cargo are yet to be fully understood. In this context, optical trapping assays constitute an important means of accurately measuring the forces generated by molecular motor proteins. We investigate, using theory and stochastic simulations, the transport properties of cargo transported by catch bonded dynein molecular motors - both singly and in teams - in a harmonic potential, which mimics the variable force experienced by cargo in an optical trap. We estimate the biologically relevant measures of first passage time - the time during which the cargo remains bound to the microtubule and detachment force -the force at which the cargo unbinds from the microtubule, using both two-dimensional and one-dimensional force balance frameworks. Our results suggest that even for cargo transported by a single motor, catch bonding may play a role depending on the force scale which marks the onset of the catch bond. By comparing with experimental measurements on single dynein-driven transport, we estimate realistic bounds of this catch bond force scale. Generically, catch bonding results in increased persistent motion, and can also generate non-monotonic behaviour of first passage times. For cargo transported by multiple motors, emergent collective effects due to catch bonding can result in non-trivial re-entrant phenomena wherein average first passage times and detachment forces exhibit non-monotonic behaviour as a function of the stall force and the motor velocity. △ Less

Submitted 16 November, 2023; v1 submitted 30 August, 2022; originally announced August 2022.

Comments: 12 pages, 7 figures

Purcell enhancement of erbium ions in TiO$_{2}$ on silicon nanocavities

Authors: Alan M. Dibos, Michael T. Solomon, Sean E. Sullivan, Manish K. Singh, Kathryn E. Sautter, Connor P. Horn, Gregory D. Grant, Yulin Lin, Jianguo Wen, F. Joseph Heremans, Supratik Guha, David D. Awschalom

Abstract: Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to d… ▽ More Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices. Here we present a scalable approach towards CMOS-compatible telecom qubits by using erbium-doped titanium dioxide thin films grown atop silicon-on-insulator substrates. From this heterostructure, we have fabricated one-dimensional photonic crystal cavities demonstrating quality factors in excess of $5\times10^{4}$ and corresponding Purcell-enhanced optical emission rates of the erbium ensembles in excess of 200. This easily fabricated materials platform represents an important step towards realizing telecom quantum memories in a scalable qubit architecture compatible with mature silicon technologies. △ Less

Submitted 20 April, 2022; originally announced April 2022.

Comments: 3 figures

Development of a Scalable Quantum Memory Platform -- Materials Science of Erbium-Doped TiO$_2$ Thin Films on Silicon

Authors: Manish Kumar Singh, Gary Wolfowicz, Jianguo Wen, Sean E. Sullivan, Abhinav Prakash, Alan M. Dibos, David D. Awschalom, F. Joseph Heremans, Supratik Guha

Abstract: Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orbitals, offering a degree of protection from external electric fields. Embedded within a thin film oxide host, REIs could enable a qubit platform with significant memory capabilities. Furthermore, a silicon-compatible thi… ▽ More Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orbitals, offering a degree of protection from external electric fields. Embedded within a thin film oxide host, REIs could enable a qubit platform with significant memory capabilities. Furthermore, a silicon-compatible thin film form factor would enable the use of standard semiconductor fabrication processes to achieve chip-based integrability and scalability for functional quantum networks. Towards this goal, we have carried out optical and microstructural studies of erbium-doped polycrystalline and epitaxial TiO$_2$ thin films on Si (100), r-sapphire, and SrTiO$_3$ (100). We observe that the inhomogeneous optical linewidth of the Er photoluminescence is comparable or better for polycrystalline Er:TiO$_2$(grown on Si) in comparison to single crystal epitaxial films on sapphire or SrTiO$_3$, implying a relative insensitivity to extended defects. We investigated the effect of the film/substrate and film/air interface and found that the inhomogeneous linewidth and spectral diffusion can be significantly improved via bottom buffer and top capping layers of undoped TiO$_2$. Using such approaches, we obtain inhomogeneous linewidths of 5.2 GHz and spectral diffusion of 180 MHz in Er:TiO$_2$ /Si(100) films and have demonstrated the engineerability of quantum-relevant properties in these thin films. △ Less

Submitted 27 February, 2022; v1 submitted 10 February, 2022; originally announced February 2022.

Comments: 13 pages, 6 figures; corrects the units for spectral diffusion values (MHz throughout the manuscript instead of GHz(typo) in some places)

Percolation Thresholds for Robust Network Connectivity

Authors: Arman Mohseni-Kabir, Mihir Pant, Don Towsley, Saikat Guha, Ananthram Swami

Abstract: Communication networks, power grids, and transportation networks are all examples of networks whose performance depends on reliable connectivity of their underlying network components even in the presence of usual network dynamics due to mobility, node or edge failures, and varying traffic loads. Percolation theory quantifies the threshold value of a local control parameter such as a node occupati… ▽ More Communication networks, power grids, and transportation networks are all examples of networks whose performance depends on reliable connectivity of their underlying network components even in the presence of usual network dynamics due to mobility, node or edge failures, and varying traffic loads. Percolation theory quantifies the threshold value of a local control parameter such as a node occupation (resp., deletion) probability or an edge activation (resp., removal) probability above (resp., below) which there exists a giant connected component (GCC), a connected component comprising of a number of occupied nodes and active edges whose size is proportional to the size of the network itself. Any pair of occupied nodes in the GCC is connected via at least one path comprised of active edges and occupied nodes. The mere existence of the GCC itself does not guarantee that the long-range connectivity would be robust, e.g., to random link or node failures due to network dynamics. In this paper, we explore new percolation thresholds that guarantee not only spanning network connectivity, but also robustness. We define and analyze four measures of robust network connectivity, explore their interrelationships, and numerically evaluate the respective robust percolation thresholds for the 2D square lattice. △ Less

Submitted 25 June, 2020; originally announced June 2020.

Novel Catchbond mediated oscillations in motor-microtubule complexes

Authors: Sougata Guha, MIthun K. Mitra, Ignacio Pagonabarraga, Sudipto Muhuri

Abstract: Generation of mechanical oscillation is ubiquitous to wide variety of intracellular processes. We show that catchbonding behaviour of motor proteins provides a generic mechanism of generating spontaneous oscillations in motor-cytoskeletal filament complexes. We obtain the phase diagram to characterize how this novel catch bond mediated mechanism can give rise to bistability and sustained limit cyc… ▽ More Generation of mechanical oscillation is ubiquitous to wide variety of intracellular processes. We show that catchbonding behaviour of motor proteins provides a generic mechanism of generating spontaneous oscillations in motor-cytoskeletal filament complexes. We obtain the phase diagram to characterize how this novel catch bond mediated mechanism can give rise to bistability and sustained limit cycle oscillations and results in very distinctive stability behaviour, including bistable and non-linearly stabilised in motor-microtubule complexes in biologically relevant regimes. Hitherto, it was thought that the primary functional role of the biological catchbond was to improve surface adhesion of bacteria and cell when subjected to external forces or flow field. Instead our theoretical study shows that the imprint of this catch bond mediated physical mechanism would have ramifications for whole gamut of intracellular processes ranging from oscillations in mitotic spindle oscillations to activity in muscle fibres. △ Less

Submitted 13 July, 2020; v1 submitted 10 May, 2020; originally announced May 2020.

Comments: 5 pages, 4 figures + Supplementary Mat

Journal ref: Biophysical Journal, 120, 4129 (2021)

Strongly correlated proton-doped perovskite nickelate memory devices

Authors: Koushik Ramadoss, Fan Zuo, Yifei Sun, Zhen Zhang, Jianqiang Lin, Umesh Bhaskar, SangHoon Shin, Muhammad Ashraful Alam, Supratik Guha, Dana Weinstein, Shriram Ramanathan

Abstract: We demonstrate memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching speeds as high as 30 ns in two-terminal devices patterned by electron-beam lithography is observed. The state switching speed reported here are 300X greater than what has been noted with proton-driven resistance switching to… ▽ More We demonstrate memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching speeds as high as 30 ns in two-terminal devices patterned by electron-beam lithography is observed. The state switching speed reported here are 300X greater than what has been noted with proton-driven resistance switching to date. The ionic-electronic correlated oxide memory devices also exhibit multi-state non-volatile switching. The results are of relevance to use of quantum materials in emerging memory and neuromorphic computing. △ Less

Submitted 1 May, 2018; originally announced May 2018.

Comments: 4 figures

Accelerating Materials Development via Automation, Machine Learning, and High-Performance Computing

Authors: Juan Pablo Correa-Baena, Kedar Hippalgaonkar, Jeroen van Duren, Shaffiq Jaffer, Vijay R. Chandrasekhar, Vladan Stevanovic, Cyrus Wadia, Supratik Guha, Tonio Buonassisi

Abstract: Successful materials innovations can transform society. However, materials research often involves long timelines and low success probabilities, dissuading investors who have expectations of shorter times from bench to business. A combination of emergent technologies could accelerate the pace of novel materials development by 10x or more, aligning the timelines of stakeholders (investors and resea… ▽ More Successful materials innovations can transform society. However, materials research often involves long timelines and low success probabilities, dissuading investors who have expectations of shorter times from bench to business. A combination of emergent technologies could accelerate the pace of novel materials development by 10x or more, aligning the timelines of stakeholders (investors and researchers), markets, and the environment, while increasing return-on-investment. First, tool automation enables rapid experimental testing of candidate materials. Second, high-throughput computing (HPC) concentrates experimental bandwidth on promising compounds by predicting and inferring bulk, interface, and defect-related properties. Third, machine learning connects the former two, where experimental outputs automatically refine theory and help define next experiments. We describe state-of-the-art attempts to realize this vision and identify resource gaps. We posit that over the coming decade, this combination of tools will transform the way we perform materials research. There are considerable first-mover advantages at stake, especially for grand challenges in energy and related fields, including computing, healthcare, urbanization, water, food, and the environment. △ Less

Submitted 20 March, 2018; originally announced March 2018.

Comments: 22 pages, 3 figures

Journal ref: Joule 2 (2018) 1410-1420

Microwave Quantum Illumination

Authors: Shabir Barzanjeh, Saikat Guha, Christian Weedbrook, David Vitali, Jeffrey H. Shapiro, Stefano Pirandola

Abstract: Quantum illumination is a quantum-optical sensing technique in which an entangled source is exploited to improve the detection of a low-reflectivity object that is immersed in a bright thermal background. Here we describe and analyze a system for applying this technique at microwave frequencies, a more appropriate spectral region for target detection than the optical, due to the naturally-occurrin… ▽ More Quantum illumination is a quantum-optical sensing technique in which an entangled source is exploited to improve the detection of a low-reflectivity object that is immersed in a bright thermal background. Here we describe and analyze a system for applying this technique at microwave frequencies, a more appropriate spectral region for target detection than the optical, due to the naturally-occurring bright thermal background in the microwave regime. We use an electro-optomechanical converter to entangle microwave signal and optical idler fields, with the former being sent to probe the target region and the latter being retained at the source. The microwave radiation collected from the target region is then phase conjugated and upconverted into an optical field that is combined with the retained idler in a joint-detection quantum measurement. The error probability of this microwave quantum-illumination system, or quantum radar, is shown to be superior to that of any classical microwave radar of equal transmitted energy. △ Less

Submitted 28 February, 2015; originally announced March 2015.

Comments: Main Letter. See arXiv:1410.4008 for an extended version including supplemental material

Journal ref: Phys. Rev. Lett. 114, 080503 (2015)

Quantum Illumination at the Microwave Wavelengths

Authors: Shabir Barzanjeh, Saikat Guha, Christian Weedbrook, David Vitali, Jeffrey H. Shapiro, Stefano Pirandola

Abstract: Quantum illumination is a quantum-optical sensing technique in which an entangled source is exploited to improve the detection of a low-reflectivity object that is immersed in a bright thermal background. Here we describe and analyze a system for applying this technique at microwave frequencies, a more appropriate spectral region for target detection than the optical, due to the naturally-occurrin… ▽ More Quantum illumination is a quantum-optical sensing technique in which an entangled source is exploited to improve the detection of a low-reflectivity object that is immersed in a bright thermal background. Here we describe and analyze a system for applying this technique at microwave frequencies, a more appropriate spectral region for target detection than the optical, due to the naturally-occurring bright thermal background in the microwave regime. We use an electro-optomechanical converter to entangle microwave signal and optical idler fields, with the former being sent to probe the target region and the latter being retained at the source. The microwave radiation collected from the target region is then phase conjugated and upconverted into an optical field that is combined with the retained idler in a joint-detection quantum measurement. The error probability of this microwave quantum-illumination system, or quantum radar, is shown to be superior to that of any classical microwave radar of equal transmitted energy. △ Less

Submitted 16 February, 2015; v1 submitted 15 October, 2014; originally announced October 2014.

Comments: In press on Physical Review Letters. Long version of the manuscript, including both the Letter and the Supplemental Material (15 pages total)

Journal ref: Phys. Rev. Lett. 114, 080503 (2015)

Spanning connectivity in a multilayer network and its relationship to site-bond percolation

Authors: Saikat Guha, Donald Towsley, Philippe Nain, Cagatay Capar, Ananthram Swami, Prithwish Basu

Abstract: We analyze the connectivity of an $M$-layer network over a common set of nodes that are active only in a fraction of the layers. Each layer is assumed to be a subgraph (of an underlying connectivity graph $G$) induced by each node being active in any given layer with probability $q$. The $M$-layer network is formed by aggregating the edges over all $M$ layers. We show that when $q$ exceeds a thres… ▽ More We analyze the connectivity of an $M$-layer network over a common set of nodes that are active only in a fraction of the layers. Each layer is assumed to be a subgraph (of an underlying connectivity graph $G$) induced by each node being active in any given layer with probability $q$. The $M$-layer network is formed by aggregating the edges over all $M$ layers. We show that when $q$ exceeds a threshold $q_c(M)$, a giant connected component appears in the $M$-layer network---thereby enabling far-away users to connect using `bridge' nodes that are active in multiple network layers---even though the individual layers may only have small disconnected islands of connectivity. We show that $q_c(M) \lesssim \sqrt{-\ln(1-p_c)}\,/{\sqrt{M}}$, where $p_c$ is the bond percolation threshold of $G$, and $q_c(1) \equiv q_c$ is its site percolation threshold. We find $q_c(M)$ exactly for when $G$ is a large random network with an arbitrary node-degree distribution. We find $q_c(M)$ numerically for various regular lattices, and find an exact lower bound for the kagome lattice. Finally, we find an intriguingly close connection between this multilayer percolation model and the well-studied problem of site-bond percolation, in the sense that both models provide a smooth transition between the traditional site and bond percolation models. Using this connection, we translate known analytical approximations of the site-bond critical region, which are functions only of $p_c$ and $q_c$ of the respective lattice, to excellent general approximations of the multilayer connectivity threshold $q_c(M)$. △ Less

Submitted 27 May, 2016; v1 submitted 27 February, 2014; originally announced February 2014.

Comments: 17 pages, 12 figures, to appear in Physical Review E

Journal ref: Phys. Rev. E 93, 062310 (2016)

Polarization fluctuation dominated electrical transport processes of polymer based ferroelectric-field-effect transistors

Authors: Satyaprasad P. Senanayak, S. Guha, K. S. Narayan

Abstract: Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in FE-FETs in conjunction with the ferroelectric to paraelectric transition. The devices offer a test bed to evaluate specific effects of polarization on the electrica… ▽ More Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in FE-FETs in conjunction with the ferroelectric to paraelectric transition. The devices offer a test bed to evaluate specific effects of polarization on the electrical processes. FE-FETs have dominant contributions from polarization-fluctuation rather than static dipolar disorder prevalent in high k paraelectric dielectric-based FETs. Additionally, photo-excitation measurements in the depletion mode reveal clear features in the FET response at different temperatures, indicative of different transport regimes. △ Less

Submitted 19 February, 2012; originally announced February 2012.

Comments: 6 figured

The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study

Authors: K. Yang, U. Scherf, S. Guha

Abstract: Inclusion of heavy metal atoms in a polymer backbone allows transitions between the singlet and triplet manifolds. Interfacial dissociation of triplet excitons constitutes a viable mechanism for enhancing photovoltaic (PV) efficiencies in polymer heterojunction-based solar cells. The PV efficiency from polymer solar cells utilizing a ladder-type poly (para-phenylene) polymer (PhLPPP) with trace… ▽ More Inclusion of heavy metal atoms in a polymer backbone allows transitions between the singlet and triplet manifolds. Interfacial dissociation of triplet excitons constitutes a viable mechanism for enhancing photovoltaic (PV) efficiencies in polymer heterojunction-based solar cells. The PV efficiency from polymer solar cells utilizing a ladder-type poly (para-phenylene) polymer (PhLPPP) with trace quantity of Pd atoms and a fullerene derivative (PCBM) is much higher than its counterpart (MeLPPP) with no Pd atom. Evidence is presented for the formation of a weak ground-state charge-transfer complex (CTC) in the blended films of the polymer and PCBM, using photo-induced absorption (PIA) spectroscopy. The CTC state in MeLPPP:PCBM has a singlet character to it, resulting in a radiative recombination. In contrast, the CTC states in PhLPPP:PCBM are more localized with a triplet character. An absorption peak at 1.65 eV is observed in PhLPPP:PCBM blend in the PIA, which may be converted to weakly-bound polaron-pairs, contributing to the enhancement of PV efficiency. △ Less

Submitted 6 August, 2009; originally announced August 2009.

Comments: 19 pages, 11 figures

Tuning intermolecular interactions in di-octyl substituted polyfluorene via hydrostatic pressure

Authors: K. Paudel, M. Chandrasekhar, S. Guha

Abstract: Polyfluorenes (PFs) represent a unique class of poly para-phenylene based blue-emitting polymers with intriguing structure-property relationships. Slight variations in the choice of functionalizing side chains result in dramatic differences in the inter- and intra-chain structures in PFs. We present photoluminescence (PL) and Raman scattering studies of bulk samples and thin films of dioctyl-sub… ▽ More Polyfluorenes (PFs) represent a unique class of poly para-phenylene based blue-emitting polymers with intriguing structure-property relationships. Slight variations in the choice of functionalizing side chains result in dramatic differences in the inter- and intra-chain structures in PFs. We present photoluminescence (PL) and Raman scattering studies of bulk samples and thin films of dioctyl-substituted PF (PF8) under hydrostatic pressure. The bulk sample was further thermally annealed at 1.9 GPa. The PL vibronics of the as-is sample red-shift at an average rate of 26 meV/GPa. The thermally annealed sample is characterized by at least two phase transitions at 1.1 GPa and 4.2 GPa, each of which has a different pressure coefficient for PL vibronics. The Huang-Rhys factor, a measure of the electron-phonon interaction, is found to increase with increasing pressures signaling a higher geometric relaxation of the electronic states. The Raman peaks harden with increasing pressures; the intra-ring C-C stretch frequency at 1600 cm$^{-1}$ has a pressure coefficient of 7.2 cm$^{-1}$/GPa and exhibits asymmetric line shapes at higher pressures, characteristic of a strong electron-phonon interaction. The optical properties of PF8 under high pressure are further contrasted with those of a branched side chain substituted PF. △ Less

Submitted 11 May, 2009; originally announced May 2009.

Comments: 22 pages, 10 figures

The role of triplet states in the emission mechanism of polymer light-emitting diodes

Authors: M. Arif, S. Mukhopadhyay, S. Ramasesha, S. Guha

Abstract: The blue emission of polyfluorene (PF) based light-emitting diodes (LEDs) is known to degrade due to a low energy green emission, which hitherto has been attributed to oxidative defects. By studying the electroluminescence from ethyl-hexyl substituted PF LEDs in the presence of oxygen and in an inert atmosphere, and by using trace quantities of paramagnetic impurities (PM) in the polymer, we sho… ▽ More The blue emission of polyfluorene (PF) based light-emitting diodes (LEDs) is known to degrade due to a low energy green emission, which hitherto has been attributed to oxidative defects. By studying the electroluminescence from ethyl-hexyl substituted PF LEDs in the presence of oxygen and in an inert atmosphere, and by using trace quantities of paramagnetic impurities (PM) in the polymer, we show that the triplet states play a major role in the low energy emission mechanism. Our time-dependent many-body studies show that there is a large cross-section for the triplet formation in the electron-hole recombination process in presence of PM, and intersystem crossing from excited singlet to triplet states. △ Less

Submitted 28 February, 2009; originally announced March 2009.

Comments: 4 pages, 2 figures

Large nonlinear absorption and refraction coefficients of carbon nanotubes estimated from femtosecond Z-scan measurements

Authors: N. Kamaraju, Sunil Kumar, Srinivasan Krishnamurthy, Shekhar Guha, A. K. Sood, C. N. R. Rao

Abstract: Nonlinear transmission of 80 and 140 femtosecond pulsed light with $0.79 μm$ wavelength through single walled carbon nanotubes suspended in water containing sodium dodecyl sulphate is studied. Pulse-width independent saturation absorption and negative cubic nonlinearity are observed, respectively, in open and closed aperture Z-scan experiments. The theoretical expressions derived to analyze the… ▽ More Nonlinear transmission of 80 and 140 femtosecond pulsed light with $0.79 μm$ wavelength through single walled carbon nanotubes suspended in water containing sodium dodecyl sulphate is studied. Pulse-width independent saturation absorption and negative cubic nonlinearity are observed, respectively, in open and closed aperture Z-scan experiments. The theoretical expressions derived to analyze the z-dependent transmission in the saturable limit require two photon absorption coefficient $β_0\sim$ $1.4 cm/MW$ and a nonlinear index $γ\sim -5.5 \times10^{-11} cm^2/W$ to fit the data. △ Less

Submitted 9 December, 2007; v1 submitted 15 October, 2007; originally announced October 2007.

Comments: 10 pages, 2 figures. Accepted and to appear in Applied Physics Letters

Polyfluorene as a model system for space-charge-limited conduction

Authors: M. Arif, M. Yun, S. Gangopadhyay, K. Ghosh, L. Fadiga, F. Galbrecht, U. Scherf, S. Guha

Abstract: Ethyl-hexyl substituted polyfluorene (PF) with its high level of molecular disorder can be described very well by one-carrier space-charge-limited conduction for a discrete set of trap levels with energy $\sim$ 0.5 eV above the valence band edge. Sweeping the bias above the trap-filling limit in the as-is polymer generates a new set of exponential traps, which is clearly seen in the density of s… ▽ More Ethyl-hexyl substituted polyfluorene (PF) with its high level of molecular disorder can be described very well by one-carrier space-charge-limited conduction for a discrete set of trap levels with energy $\sim$ 0.5 eV above the valence band edge. Sweeping the bias above the trap-filling limit in the as-is polymer generates a new set of exponential traps, which is clearly seen in the density of states calculations. The trapped charges in the new set of traps have very long lifetimes and can be detrapped by photoexcitation. Thermal cycling the PF film to a crystalline phase prevents creation of additional traps at higher voltages. △ Less

Submitted 21 March, 2007; originally announced March 2007.

Comments: 13 pages, 4 figures. Physical Review B (accepted, 2007)

Localization and Interaction Effects in Strongly Underdoped La2-xSrxCuO4

Authors: Marta Z. Cieplak, A. Malinowski, S. Guha, M. Berkowski

Abstract: The in-plane magnetoresistance (MR) in La2-xSrxCuO4 films with 0.03 < x < 0.05 has been studied in the temperature range 1.6 K to 100 K, and in magnetic fields up to 14 T, parallel and perpendicular to the CuO2 planes. The behavior of the MR is consistent with a predominant influence of interaction effects at high temperatures, switching gradually to a regime dominated by spin scattering at low… ▽ More The in-plane magnetoresistance (MR) in La2-xSrxCuO4 films with 0.03 < x < 0.05 has been studied in the temperature range 1.6 K to 100 K, and in magnetic fields up to 14 T, parallel and perpendicular to the CuO2 planes. The behavior of the MR is consistent with a predominant influence of interaction effects at high temperatures, switching gradually to a regime dominated by spin scattering at low T. Weak localization effects are absent. A positive orbital MR appears close to the boundary between the antiferromagnetic and the spin-glass phase, suggesting the onset of Maki-Thompson superconducting fluctuations deep inside the insulating phase. △ Less

Submitted 16 March, 2004; originally announced March 2004.

Comments: 4 pages, 3 figures, to appear in Phys. Rev. Letters

Temperature dependent optical studies of Ti$_{1-x}$Co$_x$O$_2$

Authors: S. Guha, K. Ghosh, J. G. Keeth, S. B. Ogale, S. R. Shinde, J. R. Simpson, H. D. Drew, T. Venkatesan

Abstract: We present the results of Raman and photoluminescence (PL) studies on epitaxial anatase phase Ti$_{1-x}$Co$_x$O$_2$ films for $x$ = 0-0.07, grown by pulsed laser deposition. The low doped system ($x$=0.01 and 0.02) shows a Curie temperature of ~700 K in the as-grown state. The Raman spectra from the doped and undoped films confirm their anatase phase. The photoluminescence spectrum is characteri… ▽ More We present the results of Raman and photoluminescence (PL) studies on epitaxial anatase phase Ti$_{1-x}$Co$_x$O$_2$ films for $x$ = 0-0.07, grown by pulsed laser deposition. The low doped system ($x$=0.01 and 0.02) shows a Curie temperature of ~700 K in the as-grown state. The Raman spectra from the doped and undoped films confirm their anatase phase. The photoluminescence spectrum is characterized by a broad emission from self-trapped excitons (STE) at 2.3 eV at temperatures below 120 K. This peak is characteristic of the anatase-phase TiO$_2$ and shows a small blueshift with increasing doping concentration. In addition to the emission from STE, the Co-doped samples show two emission lines at 2.77 eV and 2.94 eV that are absent in the undoped film indicative of a spin-flip energy. △ Less

Submitted 10 March, 2003; originally announced March 2003.

Comments: 8 pages, 4 figures

Hydrostatic pressure dependence of the luminescence and Raman frequencies in polyfluorene

Authors: C. M. Martin, S. Guha, M. Chandrasekhar, H. R. Chandrasekhar, R. Guentner, P. Scanduicci de Freitas, U. Scherf

Abstract: We present studies of the photoluminescence (PL), absorption and Raman scattering from poly[2,7-(9,9'-bis(2-ethylhexyl))fluorene] under hydrostatic pressures of 0-100 kbar at room temperature. The well-defined PL and associated vibronics that are observed at atmospheric pressure change dramatically around 20 kbar in the bulk sample and at around 35 kbar for the thin film sample. Beyond these pre… ▽ More We present studies of the photoluminescence (PL), absorption and Raman scattering from poly[2,7-(9,9'-bis(2-ethylhexyl))fluorene] under hydrostatic pressures of 0-100 kbar at room temperature. The well-defined PL and associated vibronics that are observed at atmospheric pressure change dramatically around 20 kbar in the bulk sample and at around 35 kbar for the thin film sample. Beyond these pressures the PL emission from the backbone is swamped by strong peaks due to aggregates and keto defects in the 2.1-2.6 eV region. The Raman peaks shift to higher energies and exhibit unexpected antiresonance lineshapes at higher pressures, indicating a strong electron-phonon interaction. △ Less

Submitted 16 January, 2003; originally announced January 2003.

Comments: 9 pages, 9 figures

Temperature dependent photoluminescence of organic semiconductors with varying backbone conformation

Authors: S. Guha, J. D. Rice, Y. T. Yau, C. M. Martin, M. Chandrasekhar, H. R. Chandrasekhar, R. Guentner, P. Scandiucci de Freitas, U. Scherf

Abstract: We present photoluminescence studies as a function of temperature from a series of conjugated polymers and a conjugated molecule with distinctly different backbone conformations. The organic materials investigated here are: planar methylated ladder type poly para-phenylene, semi-planar polyfluorene, and non-planar para hexaphenyl. In the longer-chain polymers the photoluminescence transition ene… ▽ More We present photoluminescence studies as a function of temperature from a series of conjugated polymers and a conjugated molecule with distinctly different backbone conformations. The organic materials investigated here are: planar methylated ladder type poly para-phenylene, semi-planar polyfluorene, and non-planar para hexaphenyl. In the longer-chain polymers the photoluminescence transition energies blue shift with increasing temperatures. The conjugated molecules, on the other hand, red shift their transition energies with increasing temperatures. Empirical models that explain the temperature dependence of the band gap energies in inorganic semiconductors can be extended to explain the temperature dependence of the transition energies in conjugated molecules. △ Less

Submitted 18 June, 2002; originally announced June 2002.

Comments: 8 pages, 9 figures

Impurity and strain effects on the magnetotransport of La1.85Sr0.15Cu(1-y)Zn(y)O4 films

Authors: Marta Z. Cieplak, A. Malinowski, K. Karpinska, S. Guha, A. Krickser, B. Kim Q. Wu, C. H. Shang, M. Berkowski, P. Lindenfeld

Abstract: The influence of zinc doping and strain related effects on the normal state transport properties(the resistivity, the Hall angle and the orbital magneto- resistance(OMR) is studied in a series of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y between 0 and 0.12 and various degrees of strain induced by the mismatch between the films and the substrate. The zinc doping affects only the constant… ▽ More The influence of zinc doping and strain related effects on the normal state transport properties(the resistivity, the Hall angle and the orbital magneto- resistance(OMR) is studied in a series of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y between 0 and 0.12 and various degrees of strain induced by the mismatch between the films and the substrate. The zinc doping affects only the constant term in the temperature dependence of cotangent theta but the strain affects both the slope and the constant term, while their ratio remains constant.OMR is decreased by zinc doping but is unaffected by strain. The ratio delta rho/(rho*tan^2 theta) is T-independent but decreases with impurity doping. These results put strong constraints on theories of the normal state of high- temperature superconductors. △ Less

Submitted 23 August, 2001; originally announced August 2001.

Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films

Authors: A. Malinowski, Marta Z. Cieplak, S. Guha, Q. Wu, B. Kim, A. Krickser, A. Perali, K. Karpinska, M. Berkowski, C. H. Shang, P. Lindenfeld

Abstract: We have studied the magnetotransport properties in the normal state for a series of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y, between 0 and 0.12. A variable degree of compressive or tensile strain results from the lattice mismatch between the substrate and the film, and affects the transport properties differently from the influence of the zinc impurities. In particular, the orbital mag… ▽ More We have studied the magnetotransport properties in the normal state for a series of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y, between 0 and 0.12. A variable degree of compressive or tensile strain results from the lattice mismatch between the substrate and the film, and affects the transport properties differently from the influence of the zinc impurities. In particular, the orbital magnetoresistance (OMR) varies with y but is strain-independent. The relations for the resistivity and the Hall angle and the proportionality between the OMR and tan^2 theta are followed about 70 K. We have been able to separate the strain and impurity effects by rewriting the above relations, where each term is strain-independent and depends on y only. We also find that changes in the lattice constants give rise to closely the same fractional changes in other terms of the equation.The OMR is more strongly supressed by the addition of impurities than tan^2 theta. We conclude that the relaxation ratethat governs Hall effect is not the same as for the magnetoresistance. We also suggest a correspondence between the transport properties and the opening of the pseudogap at a temperature which changes when the La-sr ratio changes, but does not change with the addition of the zinc impurities. △ Less

Submitted 23 August, 2001; originally announced August 2001.

Metallic nonsuperconducting phase and d-wave superconductivity in Zn-substituted LaSrCuO

Authors: K. Karpinska, Marta Z. Cieplak, S. Guha, A. Malinowski, T. Skoskiewicz, W. Plesiewicz, M. Berkowski, B. Boyce, Thomas R. Lemberger, P. Lindenfeld

Abstract: Measurements of the resistivity, magnetoresistance and penetration depth were made on films of LaSrCuO with up to 12 at.% of Zn substituted for the Cu. The results show that the quadratic temperature dependence of the inverse square of the penetration depth, indicative of d-wave superconductivity, is not affected by doping. The suppression of superconductivity leads to a metallic nonsuperconduct… ▽ More Measurements of the resistivity, magnetoresistance and penetration depth were made on films of LaSrCuO with up to 12 at.% of Zn substituted for the Cu. The results show that the quadratic temperature dependence of the inverse square of the penetration depth, indicative of d-wave superconductivity, is not affected by doping. The suppression of superconductivity leads to a metallic nonsuperconducting phase, as expected for a pairing mechanism related to spin fluctuations. The metal-insulator transition occurs in the vicinity of kFl~1, and appears to be disorder-driven, with the carrier concentration unaffected by doping. △ Less

Submitted 23 November, 1999; v1 submitted 10 November, 1999; originally announced November 1999.

Comments: 4 pages,4 figures, to appear in PRL Replacement of the original paper incorporates minor revisions suggested by the referee

Raman spectroscopy of InN films grown on Si

Authors: F. Agullo-Rueda, E. E. Mendez, N. Bojarczuk, S. Guha

Abstract: We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550 C. The Raman spectra show well defined peaks at 443, 475, 491, and 591 cm{-1}, which correspond to the A_1(TO), E_1(TO), E_2^{high}, and A_1(LO) phonons of the wurtzite structure, respectively. In backscattering normal to the surface t… ▽ More We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550 C. The Raman spectra show well defined peaks at 443, 475, 491, and 591 cm{-1}, which correspond to the A_1(TO), E_1(TO), E_2^{high}, and A_1(LO) phonons of the wurtzite structure, respectively. In backscattering normal to the surface the A_1(TO) and E_1(TO) peaks are very weak, indicating that the films grow along the hexagonal c axis. The dependence of the peak width on growth temperature reveals that the optimum temperature is 500 C, for which the fullwidth of the E_2^{high} peak has the minimum value of 7 cm{-1}. This small value, comparable to previous results for InN films grown on sapphire, is evidence of the good crystallinity of the films. △ Less

Submitted 18 October, 1999; originally announced October 1999.

Comments: 3 pages, 1 eps figure, RevTeX

Two lifetimes and the pseudogap in the orbital magnetoresistance of Zn-substituted La{1.85}Sr{0.15}CuO{4}

Authors: A. Malinowski, A. Krickser, Marta Z. Cieplak, S. Guha, K. Karpinska, M. Berkowski, P. Lindenfeld

Abstract: The effect of zinc doping on the anomalous temperature dependence of the magnetoresistance and the Hall effect in the normal state was studied in a series of La{1.85}Sr{0.15}Cu{1-y}Zn{y}O{4} films, with values of y between zero and 0.12. The orbital magnetoresistance at high temperatures is found to be proportional to the square of the tangent of the Hall angle, as predicted by the model of two… ▽ More The effect of zinc doping on the anomalous temperature dependence of the magnetoresistance and the Hall effect in the normal state was studied in a series of La{1.85}Sr{0.15}Cu{1-y}Zn{y}O{4} films, with values of y between zero and 0.12. The orbital magnetoresistance at high temperatures is found to be proportional to the square of the tangent of the Hall angle, as predicted by the model of two relaxation rates, for all Zn-doped specimens, including nonsuperconducting films. The proportionality constant is equal to 13.7+/-0.5 independent of doping. This is very different from the behavior observed in underdoped La{2-x}Sr{x}CuO{4} films where a decrease of x destroys the proportionality. In addition, the behavior of the orbital magnetoresistance at low temperatures is found to be different depending on whether x is changed or y. We suggest that these differences reflect a different evolution of the pseudogap in the two cases. △ Less

Submitted 4 March, 1999; originally announced March 1999.

Comments: 4 pages, 5 postscript figures

Magnetic-Field Induced Localization in the Normal State of Superconducting La_2-xSr_xCuo_4

Authors: A. Malinowski, Marta Z. Cieplak, A. S. van Steenbergen, J. A. A. J. Perenboom, K. Karpinska, M. Berkowski, S. Guha, P. Lindenfeld

Abstract: Magnetoresistance measurements of highly underdoped superconducting La_{2-x}Sr_xCuO_4 films with $x = 0.051$ and $x = 0.048$, performed in dc magnetic fields up to 20 T and at temperatures down to 40 mK, reveal a magnetic-field induced transition from weak to strong localization in the normal state. The normal-state conductances per CuO_2--plane, measured at different fields in a single specimen… ▽ More Magnetoresistance measurements of highly underdoped superconducting La_{2-x}Sr_xCuO_4 films with $x = 0.051$ and $x = 0.048$, performed in dc magnetic fields up to 20 T and at temperatures down to 40 mK, reveal a magnetic-field induced transition from weak to strong localization in the normal state. The normal-state conductances per CuO_2--plane, measured at different fields in a single specimen, are found to collapse to one curve with the use of a single scaling parameter that is inversely proportional to the localization length. The scaling parameter extrapolates to zero near zero field and possibly at a finite field, suggesting that in the zero-field limit the electronic states may be extended. △ Less

Submitted 14 May, 1997; originally announced May 1997.

Comments: 8 pages, 5 figures

Orbital Magnetoresistance in the LaSrCuO System

Authors: F. F. Balakirev, I. E. Trofimov, S. Guha, Marta Z. Cieplak, P. Lindenfeld

Abstract: Measurements of resistivity, Hall effect, and magnetoresistance have been made on seven c-axis oriented thin-film specimens of La(2-x)Sr(x)CuO(4) with values of x from 0.048 to 0.275, and one specimen that also contains Nd. The orbital magnetoresistance is found not to be proportional to the square of the tangent of the Hall angle except for values of x near 0.15 above about 80K. For smaller val… ▽ More Measurements of resistivity, Hall effect, and magnetoresistance have been made on seven c-axis oriented thin-film specimens of La(2-x)Sr(x)CuO(4) with values of x from 0.048 to 0.275, and one specimen that also contains Nd. The orbital magnetoresistance is found not to be proportional to the square of the tangent of the Hall angle except for values of x near 0.15 above about 80K. For smaller values of x the temperature dependence of the magnetoresistance is different, but quite similar in the various specimens, in spite of large differences in resistivity, Hall coefficient, and Hall angle. △ Less

Submitted 12 May, 1997; originally announced May 1997.

Comments: LaTeX, 14 pages, 4 embedded color eps figures