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Probing trade-off between critical size and velocity in cold-spray: An atomistic simulation
Authors:
Mahyar Ghasemi,
Alireza Seifi,
Movaffaq Kateb,
Jon Tomas Gudmundsson,
Pascal Brault,
Pirooz Marashi
Abstract:
The detailed mechanism of bonding in the cold spray process has remained elusive for both experimental and theoretical parties. Adiabatic shear instability and hydrodynamic plasticity models have been so far the most popular explanations. Here, using molecular dynamics simulation, we investigate their validity at the nanoscale. The present study has potential application for the fabrication of ult…
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The detailed mechanism of bonding in the cold spray process has remained elusive for both experimental and theoretical parties. Adiabatic shear instability and hydrodynamic plasticity models have been so far the most popular explanations. Here, using molecular dynamics simulation, we investigate their validity at the nanoscale. The present study has potential application for the fabrication of ultra-thin layers for the electronics industry. For this aim, we considered Ti nanoparticles of different diameters and Si substrates of different orientations. It is shown that very high spray velocities are required for a jet to be observed at the nanoscale. We propose a method for thermostating the substrate that enables utilizing high spray velocities. For the first time, we demonstrate an oscillatory behavior in both the normal and radial stress components within the substrate that can propagate into the particle. We have shown that neither the adiabatic shear instability model nor the hydrodynamic plasticity model can be ignored at the nanoscale. Besides, the formation of a low-resistance titanium silicide proper for electronic application is illustrated.
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Submitted 2 November, 2024;
originally announced November 2024.
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Epitaxial growth and characterization of (001) [NiFe/M]$_{20}$ (M = Cu, CuPt and Pt) superlattices
Authors:
Movaffaq Kateb,
Jon Tomas Gudmundsson,
Snorri Ingvarsson
Abstract:
We present optimization of [(15 $\unicode{x212B}$) Ni$_{80}$Fe$_{20}$/(5 $\unicode{xC5}$) M]$_{20}$ single crystal multilayers on (001) MgO, with M being Cu, Cu$_{50}$Pt$_{50}$ and Pt. These superlattices were characterized by high-resolution X-ray reflectivity (XRR) and diffraction (XRD) as well as polar mapping of important crystal planes. It is shown that cube on cube epitaxial relationship can…
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We present optimization of [(15 $\unicode{x212B}$) Ni$_{80}$Fe$_{20}$/(5 $\unicode{xC5}$) M]$_{20}$ single crystal multilayers on (001) MgO, with M being Cu, Cu$_{50}$Pt$_{50}$ and Pt. These superlattices were characterized by high-resolution X-ray reflectivity (XRR) and diffraction (XRD) as well as polar mapping of important crystal planes. It is shown that cube on cube epitaxial relationship can be obtained when depositing at the substrate temperature of 100 $^\circ$C regardless of the lattice mismatch (5% and 14% for Cu and Pt, respectively). At lower substrate temperatures poly-crystalline multilayers were obtained while at higher substrate temperatures {111} planes appear at $\sim$10$^\circ$ off normal to the film plane. It is also shown that as the epitaxial strain increases, the easy magnetization axis rotates towards the direction that previously was assumed to be harder, i.e. from [110] to [100], and eventually further increase in the strain makes the magnetic hysteresis loops isotropic in the film plane. Higher epitaxial strain is also accompanied with increased coercivity values. Thus, the effect of epitaxial strain on the magnetocrystalline anisotropy is much larger than what was observed previously in similar, but polycrystalline samples with uniaxial anisotropy (Kateb et al. 2021).
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Submitted 28 February, 2023;
originally announced February 2023.
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On the role of ion potential energy in low energy HiPIMS deposition: An atomistic simulation
Authors:
Movaffaq Kateb,
Jon Tomas Gudmundsson,
Pascal Brault,
Andrei Manolescu,
Snorri Ingvarsson
Abstract:
We study the effect of the so-called ion potential or non-kinetic energies of bombarding ions during ionized physical vapor deposition of Cu using molecular dynamics simulations. In particular we focus on low energy HiPIMS deposition, in which the potential energy of ions can be comparable to their kinetic energy. The ion potential, as a short-ranged repulsive force between the ions of the film-fo…
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We study the effect of the so-called ion potential or non-kinetic energies of bombarding ions during ionized physical vapor deposition of Cu using molecular dynamics simulations. In particular we focus on low energy HiPIMS deposition, in which the potential energy of ions can be comparable to their kinetic energy. The ion potential, as a short-ranged repulsive force between the ions of the film-forming material and the surface atoms (substrate and later deposited film), is defined by the Ziegler-Biersack-Littmark potential. Analyzing the final structure indicates that, including the ion potential leads to a slightly lower interface mixing and fewer point defects (such as vacancies and interstitials), but resputtering and twinning have increased slightly. However, by including the ion potential the collision pattern changes. We also observed temporary formation of a ripple/pore with 5~nm height when the ion potential is included. The latter effect can explain the pores in HiPIMS deposited Cu thin films observed experimentally by atomic force microscopy.
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Submitted 15 September, 2021; v1 submitted 14 January, 2021;
originally announced January 2021.
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Tailoring interface mixing and magnetic properties in (111) Permalloy/Pt multilayers
Authors:
Movaffaq Kateb,
Jon Tomas Gudmundsson,
Snorri Ingvarsson
Abstract:
We present deposition and characterization of multilayers consisting of 20 repetitions of 15 $Å$ thick permalloy Ni$_{80}$Fe$_{20}$ at. \% (Py) and 5 $Å$ Pt. The samples were prepared by two different sputter deposition methods, namely dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS), that represent low and moderate ionized flux fraction of the film forming mater…
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We present deposition and characterization of multilayers consisting of 20 repetitions of 15 $Å$ thick permalloy Ni$_{80}$Fe$_{20}$ at. \% (Py) and 5 $Å$ Pt. The samples were prepared by two different sputter deposition methods, namely dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS), that represent low and moderate ionized flux fraction of the film forming material, respectively, for deposition of the Py layers. The effect of substrate roughness, working gas pressure and sputter power on the in-plane uniaxial magnetic anisotropy of the films are studied. The multilayers were characterized by X-ray reflectivity and diffraction, and by magneto-optical Kerr effect (MOKE). It is shown that HiPIMS deposition produces multilayers with unique surface roughness regardless of the substrate surface roughness. Multilayers prepared by both dcMS and HiPIMS deposition present a strong (111) texture normal to the film plane. The results show that utilizing HiPIMS for deposition of the Py layer leads to a minimum interface mixing between individual layers compared to dcMS deposition performed at sputter power. This is associated with the smooth surface of Py deposited by HiPIMS. However, this sharp interface results in higher coercivity and an opening in the hard axis hysteresis loops while multilayers with intermixing present well defined in-plane uniaxial anisotropy i.e. a linear hard axis. Comparison with Py/Cu and Py/CuPt multilayers, prepared under identical conditions using HiPIMS, suggests that poor in-plane uniaxial anisotropy is obtained in the Py/Pt case, caused by the inverse magnetostriction arising from the large lattice mismatch between Py and Pt. The Py/Pt multilayers that exhibit interface mixing have a more relaxed interface and thus presents negligible inverse magnetostriction and have better defined anisotropy.
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Submitted 18 July, 2021; v1 submitted 12 October, 2020;
originally announced October 2020.
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Effect of substrate bias on microstructure of epitaxial film grown by HiPIMS: An atomistic simulation
Authors:
Movaffaq Kateb,
Jon Tomas Gudmundsson,
Snorri Ingvarsson
Abstract:
We explore combination of high power impulse magnetron sputtering (HiPIMS) and substrate bias for the epitaxial growth of Cu film on Cu (111) substrate by molecular dynamics simulation. A fully ionized deposition flux was used to represent the high ionization fraction in the HiPIMS process. To mimic different substrate bias, we assumed the deposition flux with a flat energy distribution in the low…
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We explore combination of high power impulse magnetron sputtering (HiPIMS) and substrate bias for the epitaxial growth of Cu film on Cu (111) substrate by molecular dynamics simulation. A fully ionized deposition flux was used to represent the high ionization fraction in the HiPIMS process. To mimic different substrate bias, we assumed the deposition flux with a flat energy distribution in the low, moderate and high energy ranges. We also compared the results of fully ionized flux with results assuming a completely neutral flux, in analogy with thermal evaporation. It is confirmed that in the low energy regime, HiPIMS presents a slightly smoother surface and more interface mixing compared to that of thermal evaporation. In the moderate energy HiPIMS, however, an atomically smooth surface was obtained with a slight increase in the interface mixing compared to low energy HiPIMS. In the high energy regime, HiPIMS presents severe interface mixing with a smooth surface but limited growth due to resputtering from the surface. The results also indicate that fewer crystal defects appear in the film for moderate energy HiPIMS. We attribute this behavior to the repetition frequency of collision events. In particular high energy HiPIMS suffers from high repetition of collision events which does not allow reconstruction of the film. While in the low energy HiPIMS there are not enough events to overcome island growth. At moderate energy, collision events repeat in a manner that provides enough time for reconstruction which results in a smooth surface, fewer defects and limited intermixing.
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Submitted 4 June, 2020;
originally announced June 2020.
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The role of ionization fraction on the surface roughness, density and interface mixing of the films deposited by thermal evaporation, dc magnetron sputtering and HiPIMS: An atomistic simulation
Authors:
Movaffaq Kateb,
Hamidreza Hajihoseini,
Jon Tomas Gudmundsson,
Snorri Ingvarsson
Abstract:
We explore the effect of ionization fraction on the epitaxial growth of Cu film on Cu (111) substrate at room temperature. We compare thermal evaporation, dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). Three deposition conditions i.e. fully neutral, 50% ionized and 100% ionized flux were considered as thermal evaporation, dcMS and HiPIMS, respectively, for ~20…
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We explore the effect of ionization fraction on the epitaxial growth of Cu film on Cu (111) substrate at room temperature. We compare thermal evaporation, dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). Three deposition conditions i.e. fully neutral, 50% ionized and 100% ionized flux were considered as thermal evaporation, dcMS and HiPIMS, respectively, for ~20000 adatoms. It is shown that higher ionization fraction of the deposition flux leads to smoother surfaces by two major mechanisms i.e. decreasing clustering in the vapor phase and bi-collision of high energy ions at the film surface. The bi-collision event consists of local amorphization which fills the gaps between islands followed by crystallization due to secondary collisions. We found bi-collision events to be very important to prevent island growth to become dominant and increase the surface roughness. Regardless of the deposition method, epitaxial Cu thin films suffer from stacking fault areas (twin boundaries) in agreement with recent experimental results. In addition, HiPIMS deposition presents considerable interface mixing while it is negligible in thermal evaporation and dcMS deposition, those present less adhesion accordingly.
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Submitted 11 April, 2019;
originally announced April 2019.
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Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20
Authors:
Movaffaq Kateb,
Jon Tomas Gudmundsson,
Snorri Ingvarsson
Abstract:
We investigate the effect of atomic ordering on the magnetic anisotropy of Ni80Fe20 at.% (Py). To this end, Py films were grown epitaxially on MgO (001) using dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). Aside from twin boundaries observed in the latter case, both methods present high quality single crystals with cube-on-cube epitaxial relationship as verifi…
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We investigate the effect of atomic ordering on the magnetic anisotropy of Ni80Fe20 at.% (Py). To this end, Py films were grown epitaxially on MgO (001) using dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). Aside from twin boundaries observed in the latter case, both methods present high quality single crystals with cube-on-cube epitaxial relationship as verified by the polar mapping of important crystal planes. However, X-ray diffraction results indicate higher order for the dcMS deposited film towards L12 Ni3Fe superlattice. This difference can be understood by the very high deposition rate of HiPIMS during each pulse which suppresses adatom mobility and ordering. We show that the dcMS deposited film presents biaxial anisotropy while HiPIMS deposition gives well defined uniaxial anisotropy. Thus, higher order achieved in the dcMS deposition behaves as predicted by magnetocrystalline anisotropy i.e. easy axis along the [111] direction that forced in the plane along the [110] direction due to shape anisotropy. The uniaxial behaviour in HiPIMS deposited film then can be explained by pair ordering or more recent localized composition non-uniformity theories. Further, we studied magnetoresistance of the films along the [100] directions using an extended van der Pauw method. We find that the electrical resistivities of the dcMS deposited film are lower than in their HiPIMS counterparts verifying the higher order in the dcMS case.
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Submitted 28 February, 2019;
originally announced March 2019.
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Comparison of magnetic and structural properties of permalloy Ni80Fe20 grown by dc and high power impulse magnetron sputtering
Authors:
Movaffaq Kateb,
Hamidreza Hajihoseini,
Jon Tomas Gudmundsson,
Snorri Ingvarsson
Abstract:
We study the microstructure and magnetic properties of Ni80Fe20 thin films grown by high power impulse magnetron sputtering (HiPIMS), and compare with films grown by dc magnetron sputtering (dcMS). The films were grown under a tilt angle of 35° to identical thickness of 37 nm using both techniques, at different pressure (0.13-0.73 Pa) and substrate temperature (room temperature and 100 °C). All of…
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We study the microstructure and magnetic properties of Ni80Fe20 thin films grown by high power impulse magnetron sputtering (HiPIMS), and compare with films grown by dc magnetron sputtering (dcMS). The films were grown under a tilt angle of 35° to identical thickness of 37 nm using both techniques, at different pressure (0.13-0.73 Pa) and substrate temperature (room temperature and 100 °C). All of our films display effective in-plane uniaxial anisotropy with square easy axis and linear hard axis magnetization traces. X-ray diffraction reveals that there is very little change in grain size within the pressure and temperature ranges explored. However, variations in film density, obtained by X-ray reflectivity measurements, with pressure have a significant effect on magnetic properties such as anisotropy field (Hk) and coercivity (Hc). Depositions where adatom energy is high produce dense films, while low adatom energy results in void-rich films with higher Hk and Hc. The latter applies to our dcMS deposited films at room temperature and high pressure. However, the HiPIMS deposition method gives higher adatom energy than the dcMS and results in dense films with low Hk and Hc. The surface roughness is found to increase with increased pressure, in all cases, however it showed negligible contribution to the increase in Hk and Hc.
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Submitted 7 March, 2019; v1 submitted 31 May, 2018;
originally announced May 2018.
