Showing 1–30 of 30 results for author: Guangrui

Significant Photoluminescence Improvements from Bulk Germanium-Based Thin Films with Ultra-low Threading Dislocation Densities

Authors: Liming Wang, Gideon Kassa, Jifeng Liu, Guangrui Xia

Abstract: Bulk Ge crystals, characterized by significantly lower threading dislocation densities than their epitaxial counterparts, emerge as optimal candidates for studying and improving Ge laser performance. Our study focused on the Ge thickness and TDD impacts on Ge photoluminescence. Bulk Ge crystals, characterized by significantly lower threading dislocation densities than their epitaxial counterparts, emerge as optimal candidates for studying and improving Ge laser performance. Our study focused on the Ge thickness and TDD impacts on Ge photoluminescence. △ Less

Submitted 14 February, 2025; v1 submitted 8 April, 2024; originally announced April 2024.

Monolithically integrated 940 nm half VCSELs on bulk Ge substrates

Authors: Yunlong Zhao, Jia Guo, Markus Feifel, Hao-Tien Cheng, Yun-Cheng Yang, Lukas Chrostowski, David Lackner, Chao-Hsin Wu, Guangrui, Xia

Abstract: High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown structures have photoluminescence spectra and reflectance spectra comparable to those grown on conventional bulk GaAs wafers and have smooth morphology and reasonable uniformity. These results strongly support full VCSE… ▽ More High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown structures have photoluminescence spectra and reflectance spectra comparable to those grown on conventional bulk GaAs wafers and have smooth morphology and reasonable uniformity. These results strongly support full VCSEL growth and fabrication on larger-area bulk Ge substrates for the mass production of AlGaAs-based VCSELs. △ Less

Submitted 28 October, 2022; originally announced October 2022.

Comments: arXiv admin note: text overlap with arXiv:2201.04937

Sub-10-micron thick Ge thin films from bulk-Ge substrates via a wet etching method

Authors: Liming Wang, Guangrui Xia

Abstract: Low-defect-density Ge thin films are critical in Ge based optical devices (optical detectors, LEDs and Lasers) integrated with Si electronic devices for low-cost, highly integrated photonic circuits. In this work, Ge thin films prepared by wet etching with four different solutions were studied in terms of the surface morphology, defect density and achievable thickness. Both nanostrip-based solutio… ▽ More Low-defect-density Ge thin films are critical in Ge based optical devices (optical detectors, LEDs and Lasers) integrated with Si electronic devices for low-cost, highly integrated photonic circuits. In this work, Ge thin films prepared by wet etching with four different solutions were studied in terms of the surface morphology, defect density and achievable thickness. Both nanostrip-based solution (1:1:10) and HCl-based solution (1:1:5) were able to wet-etch 535 micron thick bulk-Ge substrates to Ge films thinner than 10 micron within 53 hours. The corresponding RMS surface roughness was 32 nm for the nanostrip-based solution and 10 nm for the HCl-based solution. The good quality of bulk-Ge was preserved before and after the etching process according to the HRXRD results. The low threading dislocation density of 6000-7000 cm-2 was maintained in the process of wet etching without introducing extra defects. This approach provides an inexpensive and convenient way to prepare sub-10-micron thick Ge thin films, enabling future studies of low-defect-density Ge-based devices such as photodetectors, LEDs, and lasers. △ Less

Submitted 16 October, 2022; originally announced October 2022.

Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates

Authors: Jia Guo, Yunlong Zhao, Markus Feifel, Hao-tien Cheng, Yun-cheng Yang, Lukas Chrostowski, David Lackner, Chao-hsin Wu, Guangrui, Xia

Abstract: We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers are smooth and flat. The reflectance spectra of the GaAsP/Si DBRs have lower intensities than the GaAs DBRs and have double peaks. Transfer matrix meth… ▽ More We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers are smooth and flat. The reflectance spectra of the GaAsP/Si DBRs have lower intensities than the GaAs DBRs and have double peaks. Transfer matrix method calculations, surface scratch and polishing tests were conducted, which suggest that the surface cross-hatch was the cause of the inferior DBR reflectance spectra. △ Less

Submitted 4 September, 2022; originally announced September 2022.

Theoretical study of small signal modulation behavior of Fabry-Perot Germanium-on-Silicon lasers

Authors: Ying Zhu, Liming Wang, Zhiqiang Li, Ruitao Wen, Guangrui Xia

Abstract: This work investigated the small signal performance of Fabry-Perot Ge-on-Si lasers by modeling and simulations. The 3dB bandwidth dependence on the structure parameters such as poly-Si cladding thickness, Ge cavity width and thickness, and minority carrier lifetime were studied. A 3dB bandwidth of 33.94 GHz at a biasing current of 270.5 mA is predicted after Ge laser structure optimization with a… ▽ More This work investigated the small signal performance of Fabry-Perot Ge-on-Si lasers by modeling and simulations. The 3dB bandwidth dependence on the structure parameters such as poly-Si cladding thickness, Ge cavity width and thickness, and minority carrier lifetime were studied. A 3dB bandwidth of 33.94 GHz at a biasing current of 270.5 mA is predicted after Ge laser structure optimization with a defect limited carrier lifetime of 1 ns. △ Less

Submitted 18 July, 2022; originally announced July 2022.

Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates

Authors: Yunlong Zhao, Jia Guo, Markus Feifel, Hao-tien Cheng, Yun-cheng Yang, Liming Wang, Lukas Chrostowski, David Lackner, Chao-hsin Wu, Guangrui, Xia

Abstract: High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology, reasonable periodicity and uniformity. These results strongly support VCSEL growth and fabrication on more scalable bu… ▽ More High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology, reasonable periodicity and uniformity. These results strongly support VCSEL growth and fabrication on more scalable bulk Ge substrates for large scale production of AlGaAs-based VCSELs. △ Less

Submitted 22 December, 2021; originally announced January 2022.

Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering

Authors: Guangnan Zhou, Fanming Zeng, Rongyu Gao, Qing Wang, Kai Cheng, Guangrui Xia, Hongyu Yu

Abstract: We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6 V with negligible influence on the threshold… ▽ More We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6 V with negligible influence on the threshold voltage and on-resistance. Time-dependent gate breakdown measurements reveal that the maximum gate drive voltage increases from 6.2 to 10.6 V for a 10-year lifetime with a 1% gate failure rate. This method effectively expands the operating voltage margin of the p-GaN gate HEMTs without any other additional process steps. △ Less

Submitted 2 June, 2021; originally announced June 2021.

Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs

Authors: Guangnan Zhou, Yang Jiang, Gaiying Yang, Qing Wang, Mengya Fan, Lingli Jiang, Hongyu Yu, Guangrui Xia

Abstract: We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN and Au/Ti/graphene/p-GaN junctions demonstrated that all the three layers (Au, Ti and p-GaN)… ▽ More We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN and Au/Ti/graphene/p-GaN junctions demonstrated that all the three layers (Au, Ti and p-GaN) are essential for the increased resistance. Raman characterization of the p-GaN showed a decrease of the Mg-N bonding, i.e., the deactivation of Mg, which is consistent with the Hall measurement results. Moreover, this high-resistance junction structure was employed in p-GaN gate AlGaN/GaN HEMTs. It was shown to be an effective gate technology that was capable to boost the gate breakdown voltage from 9.9 V to 13.8 V with a negligible effect on the threshold voltage or the sub-threshold slope. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-gate-sweep Measurements

Authors: Guangnan Zhou, Fanming Zeng, Yang Jiang, Qing Wang, Lingli Jiang, Guangrui, Xia, Hongyu Yu

Abstract: In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related breakdown. This method is an effective method to… ▽ More In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related breakdown. This method is an effective method to determine the breakdown mechanisms. The different BD mechanisms were further confirmed by scanning electron microscopy (SEM). Finally, the temperature dependences of the three BD mechanisms were measured and compared. This analysis method was also employed in the devices with a different passivation material and showed its applicability. △ Less

Submitted 30 September, 2020; originally announced September 2020.

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

Authors: Wei-Chih Cheng, Minghao He, Siqi Lei, Liang Wang, Jingyi Wu, Fanming Zeng, Qiaoyu Hu, Feng Zhao, Mansun Chan, Guangrui, Xia, Hongyu Yu

Abstract: In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the high-stress SiNx, and provided a good passivated interface. The HEMTs with dual-layer stressors showed a 1 V increase in the threshold voltage (Vth) with comparable… ▽ More In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the high-stress SiNx, and provided a good passivated interface. The HEMTs with dual-layer stressors showed a 1 V increase in the threshold voltage (Vth) with comparable on-current and RF current gain to those without stressors. Moreover, the off-current (I_off) was shown to be reduced by one to three orders of magnitude in the strained devices as a result of the lower electric field in AlGaN, which suppressed the gate injection current. The dual-layer stressor scheme supports strain engineering as an effective approach in the pursuit of the normally-off operation of AlGaN/GaN HEMTs. △ Less

Submitted 31 July, 2019; originally announced August 2019.

Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers

Authors: Jingyi Wu, Siqi Lei, Wei-Chih Cheng, Robert Sokolovskij, Qing Wang, Guangrui, Xia, Hongyu Yu

Abstract: O2-plamsa-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated. At 40 W RF bias power and 40 sccm oxygen flow, the etch depth of Al0.25Ga0.75N was 5.7 nm per cycle. The 0.8 nm AlN spacer layer acted as an etch-stop layer in 3 cycles. The surface roughness improved to 0.33 nm after 7 digital etch cycles. Compared to the dry etch only approach, this technique cause… ▽ More O2-plamsa-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated. At 40 W RF bias power and 40 sccm oxygen flow, the etch depth of Al0.25Ga0.75N was 5.7 nm per cycle. The 0.8 nm AlN spacer layer acted as an etch-stop layer in 3 cycles. The surface roughness improved to 0.33 nm after 7 digital etch cycles. Compared to the dry etch only approach, this technique causes less damages. It was shown to be effective in precisely controlling the AlGaN etch depth required for recessed-AlGaN HEMTs. △ Less

Submitted 31 July, 2019; originally announced August 2019.

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

Authors: Guangnan Zhou, Zeyu Wan, Gaiying Yang, Yang Jiang, Robert Sokolovskij, Hongyu Yu, Guangrui, Xia

Abstract: In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/ SiNx on the two sides. Compared to the Au/Ti/p-GaN HEMTs without graphene, the insertion of graphene can increase the ION/IOFF ratios by a factor of 50, increase… ▽ More In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/ SiNx on the two sides. Compared to the Au/Ti/p-GaN HEMTs without graphene, the insertion of graphene can increase the ION/IOFF ratios by a factor of 50, increase the VTH by 0.30 V and reduce the off-state gate leakage by 50 times. Additionally, this novel gate structure has better thermal stability. After thermal annealing at 350 °C, gate breakdown voltage holds at 12.1 V, which is first reported for Schottky gate p-GaN HEMTs. This is considered to be a result of the 0.24 eV increase in Schottky barrier height and the better quality of the Ti/graphene/p-GaN and Ti/graphene/SiNx interfaces. This approach is very effective in improving the Ion/Iff ratio and gate BV of normally-OFF GaN HEMTs. △ Less

Submitted 22 October, 2019; v1 submitted 31 July, 2019; originally announced August 2019.

Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD

Authors: Guangnan Zhou, Alejandra V. Cuervo Covian, Kwang Hong Lee, Chuan Seng Tan, Jifeng Liu, Guangrui, Xia

Abstract: Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and photoluminescence were characterized to study the impacts of defect annealing and Si substrate offcut effects on the Ge film quality and most importantly, the light e… ▽ More Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and photoluminescence were characterized to study the impacts of defect annealing and Si substrate offcut effects on the Ge film quality and most importantly, the light emission properties. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films have a small tensile strain of 0.2%. As-grown P and As-doped Ge films have threading dislocaiton densities from 2.8e8 to 1.1e9 cm^(-2) without defect annealing. With thermal cycling, these values reduced to 1-1.5e8 cm^(-2). The six degree offcut of the Si substrate was shown to have little impact. In contrast to delta doping, the out-diffusion of dopants has been successfully suppressed to retain the doping concentration upon defect annealing. However, the photoluminescence intensity decreases mostly due to Si-Ge interdiffusion, which also causes a blue-shift in the emission wavelength. Compared to a benckmarking sample from the first Ge laser work doped by delta doping method in 2012, the as-grown P or As-doped Ge films have similar photoluminescence intensity at a 25% doping concentration and smoother surface, which are promising for Ge lasers with better light emission efficiencies. △ Less

Submitted 25 February, 2019; v1 submitted 29 January, 2019; originally announced January 2019.

Comments: arXiv admin note: text overlap with arXiv:1712.05468

Interdiffusion in Group IV Semiconductor Material Systems: Applications, Research Methods and Discoveries

Authors: Guangrui, Xia

Abstract: Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these materials, nanometer scale interdiffusion happens that are generally undesirable for device performance. With higher Ge molar fractions and higher compressive… ▽ More Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these materials, nanometer scale interdiffusion happens that are generally undesirable for device performance. With higher Ge molar fractions and higher compressive strains, Si-Ge interdiffusion can be much faster than dopant diffusion. However, Si-Ge interdiffusion behaviors have not been well understood until recent years. Much less studies are available for GeSn. This review starts with basic properties and the applications of major group IV semiconductors, and then reviews the progress made so far on Si-Ge and Ge-Sn interdiffusion behaviors. Theories, experimental methods, design and practical considerations are discussed together with the key findings in this field. △ Less

Submitted 31 July, 2019; v1 submitted 29 January, 2019; originally announced January 2019.

A wet etching method for few-layer black phosphorus with an atomic accuracy and compatibility with major lithography techniques

Authors: Teren Liu, Tao Fang, Karen Kavanagh, Guangrui, Xia

Abstract: This paper reports a few-layer black phosphorus thickness pattern fabricated by a top-down nanofabrication approach. This was achieved by a new wet etching process that can etch selected regions of few-layer black phosphorus with an atomic layer accuracy. This method is deep-UV and e-beam lithography process compatible,and is free of oxygen and other common doping sources. It provides a feasible p… ▽ More This paper reports a few-layer black phosphorus thickness pattern fabricated by a top-down nanofabrication approach. This was achieved by a new wet etching process that can etch selected regions of few-layer black phosphorus with an atomic layer accuracy. This method is deep-UV and e-beam lithography process compatible,and is free of oxygen and other common doping sources. It provides a feasible patterning approach for largescale manufacturing of few-layer BP materials and devices. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Experiments and Modeling of Mass Transport Phenomena in SiGe Devices

Authors: Guangrui, Xia

Abstract: Recent experiments and continuum modeling work on dopant diffusion and segregation, Si-Ge interdiffusion, and defect engineering in SiGe material systems are reviewed. Doping impact on Ge thin film quality and interdiffusion is also discussed. These are relevant to SiGe-based semiconductor devices including SiGe hetero-junction bipolar transistors, metal-oxidesemiconductor field-effect transistors… ▽ More Recent experiments and continuum modeling work on dopant diffusion and segregation, Si-Ge interdiffusion, and defect engineering in SiGe material systems are reviewed. Doping impact on Ge thin film quality and interdiffusion is also discussed. These are relevant to SiGe-based semiconductor devices including SiGe hetero-junction bipolar transistors, metal-oxidesemiconductor field-effect transistors, and Ge-on-Si based photonic devices. △ Less

Submitted 26 September, 2018; originally announced September 2018.

The stability of exfoliated FeSe nanosheets during in-air device fabrication process

Authors: Rui Yang, Weijun Luo, Shun Chi, Douglas Bonn, Guangrui Xia

Abstract: We studied the stability and superconductivity of FeSe nanosheets during an in-air device fabrication process. Methods were developed to improve the exfoliation yield and to maintain the superconductivity of FeSe. Raman spectroscopy, atomic force microscopy, optical microscopy and time-of-flight-secondary-ion-mass-spectroscopy measurements show that FeSe nanosheets decayed in air. Precipitation of… ▽ More We studied the stability and superconductivity of FeSe nanosheets during an in-air device fabrication process. Methods were developed to improve the exfoliation yield and to maintain the superconductivity of FeSe. Raman spectroscopy, atomic force microscopy, optical microscopy and time-of-flight-secondary-ion-mass-spectroscopy measurements show that FeSe nanosheets decayed in air. Precipitation of Se particles and iron oxidation likely occurred during the decay process. Transport measurements revealed that the superconductivity of FeSe disappeared during a conventional electron beam lithography process. Shadow mask evaporation and transfer onto pre-defined electrodes methods were shown to be effective in maintaining the superconductivity after the in-air device fabrication process. These methods developed provide a way of making high quality FeSe nano-devices. △ Less

Submitted 7 May, 2018; originally announced May 2018.

Interlayer coupling effect in twisted stacked few layer black phosphorus revealed by abnormal blue shifts in Raman spectra

Authors: Tao Fang, Teren Liu, Zenan Jiang, Rui Yang, Peyman Servati, Guangrui, Xia

Abstract: Twisted stacked few layer black phosphorus heterostructures were successfully fabricated in this work. Abnormal blue shifts in their Ag1 and Ag2 Raman peaks and unique optical reflections were observed in these samples. The phonon behavior difference can be explained by our density functional theory calculations, which suggest that interlayer coupling has a significant effect in twisted bilayer bl… ▽ More Twisted stacked few layer black phosphorus heterostructures were successfully fabricated in this work. Abnormal blue shifts in their Ag1 and Ag2 Raman peaks and unique optical reflections were observed in these samples. The phonon behavior difference can be explained by our density functional theory calculations, which suggest that interlayer coupling has a significant effect in twisted bilayer black phosphorus. According to the calculations, the interlayer interactions are not simply van der Waals interactions. Additional interactions, such as weak valence bonding between the top and bottom flakes, are considered to be the cause of the blue shifts in their Raman spectra. △ Less

Submitted 3 May, 2018; originally announced May 2018.

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Authors: Guangnan Zhou, Kwang Hong Lee, Dalaver H. Anjum, Qiang Zhang, Xixiang Zhang, Chuan Seng Tan, Guangrui, Xia

Abstract: Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown and annealed. Several different materials characterization methods have been performed to characterize the Ge film quality. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. On the other hand, B doped Ge films have threading dislocations… ▽ More Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown and annealed. Several different materials characterization methods have been performed to characterize the Ge film quality. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. On the other hand, B doped Ge films have threading dislocations above 1 x 10^8 cm-2. While P and As doping can reduce the threading dislocation density to be less than 10^6 cm-2 without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x_Ge range and with the dislocation mediated diffusion term was established. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications. △ Less

Submitted 14 December, 2017; originally announced December 2017.

Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation

Authors: Weijun Luo, Qian Song, Guangnan Zhou, David Tuschel, Guangrui Xia

Abstract: We investigated 10 to 200 nm thick black phosphorus flakes on SiO2/Si and polyimide substrates by Angle-resolved Polarized Raman spectra (ARPRS) using 442 nm excitation wavelength. The results revealed that ARPRS with 442 nm excitation can provide unambiguous, convenient, non-destructive and fast determination of BP's crystallographic orientation. The substrate and thickness dependencies of Raman… ▽ More We investigated 10 to 200 nm thick black phosphorus flakes on SiO2/Si and polyimide substrates by Angle-resolved Polarized Raman spectra (ARPRS) using 442 nm excitation wavelength. The results revealed that ARPRS with 442 nm excitation can provide unambiguous, convenient, non-destructive and fast determination of BP's crystallographic orientation. The substrate and thickness dependencies of Raman spectra and Raman tensor elements were studied. These dependencies were shown to be influenced by Raman excitation laser heating effect. By comparing with in-situ Raman measurements at elevated temperatures, we were able to quantify the laser-heating effect, which is significant and hard to avoid for Raman measurements of BP on polyimide substrates due to the poor thermal conductivity of the substrate. Thermal processing by substrate heating was shown to have a significant impact on BP on SiO2/Si substrate, but not for BP on polyimide due to smaller thermal expansion mismatch. Our results give important insights on Raman Spectroscopy characterizations of BP on different substrates. △ Less

Submitted 11 October, 2016; originally announced October 2016.

Comments: 45 pages, 300 figures

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Authors: Feiyang Cai, Dalaver H. Anjum, Xixiang Zhang, Guangrui, Xia

Abstract: Si-Ge interdiffusion with a high phosphorus doping level was investigated by both experiments and modeling. Ge/Si1-xGex/Ge multi-layer structures with 0.75<x_Ge<1 , a mid-10^18 to low-10^19 cm-3 P doping and a dislocation density of 10^8 to 10^9 cm-2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2-8 times of that of the undoped sample. The doping depe… ▽ More Si-Ge interdiffusion with a high phosphorus doping level was investigated by both experiments and modeling. Ge/Si1-xGex/Ge multi-layer structures with 0.75<x_Ge<1 , a mid-10^18 to low-10^19 cm-3 P doping and a dislocation density of 10^8 to 10^9 cm-2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2-8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that Si-Ge interdiffusion coefficient is proportional to n^2/n_i^2 for the conditions studied, which indicates that the interdiffusion in high Ge fraction range with n-type doping is dominated by V^(2-) defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers. △ Less

Submitted 2 August, 2016; originally announced August 2016.

Mechanism of the fcc-hcp Phase Transformation in Solid Ar

Authors: Bingxi Li, Guangrui Qian, Artem R. Oganov, Salah Eddine Boulfelfel, Roland Faller

Abstract: We present an atomistic description of the {\it fcc}--to--{\it hcp} transformation mechanism in solid argon (Ar) obtained from transition path sampling molecular dynamics simulation. The phase transition pathways collected during the sampling for an 8000--particle system reveal three transition types according to the lattice deformation and relaxation details. In all three transition types, we see… ▽ More We present an atomistic description of the {\it fcc}--to--{\it hcp} transformation mechanism in solid argon (Ar) obtained from transition path sampling molecular dynamics simulation. The phase transition pathways collected during the sampling for an 8000--particle system reveal three transition types according to the lattice deformation and relaxation details. In all three transition types, we see a critical accumulation of defects and uniform growth of a less ordered transition state, followed by a homogeneous growth of an ordered phase. Stacking disorder is discussed to describe the transition process and the cooperative motions of atoms in \{111\} planes. We investigate the nucleation with larger system. In a system of 18000--particles, the collective movements of atoms required for this transition are facilitated by the formation and growth of stacking faults. However the enthalpy barrier is still far beyond the thermal fluctuation. The high barrier explains previous experimental observations of the inaccessibility of the bulk transition at low pressure and its sluggishness even at extremely high pressure. The transition mechanism in bulk Ar is different from Ar nanoclusters as the orthorhombic intermediate structure proposed for the latter is not observed in any of our simulations. △ Less

Submitted 26 April, 2017; v1 submitted 16 March, 2016; originally announced March 2016.

Comments: 25 pages, 12 figures, journal supplementary included as appendix

Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping

Authors: Yiheng Lin, Wei Shi, Jizhong Li, Ting-Chang Chang, Ji-Soo Park, Jennifer Hydrick, Zigang Duan, Mark Greenberg, James G. Fiorenza, Lukas Chrostowski, Guangrui Xia

Abstract: High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (ART) technique. The GaAs/ART-Ge/Si-based DBRs have reflectivity spectra comparable to those grown on conventional bulk off-cut GaAs substrates and have smooth morphology, and good periodicity and uniformity. Anitphase doma… ▽ More High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (ART) technique. The GaAs/ART-Ge/Si-based DBRs have reflectivity spectra comparable to those grown on conventional bulk off-cut GaAs substrates and have smooth morphology, and good periodicity and uniformity. Anitphase domain formation is significantly reduced in GaAs on ART-Ge/Si substrates, and etch pit density of the GaAs base layer on the ART-Ge substrates ranges from 10^5 to 6 x 10^6 cm^(-2). These results paved the way for future VCSEL growth and fabrication on these ART-Ge substrates and also confirm that virtual Ge substrates via ART technique are effective Si platforms for optoelectronic integrated circuits. △ Less

Submitted 28 January, 2017; v1 submitted 15 January, 2016; originally announced January 2016.

On the Origins of Near-Surface Stresses in Silicon around Cu-filled and CNT-filled Through Silicon Vias

Authors: Ye Zhu, Kaushik Ghosh, Hong Yu Li, Yiheng Lin, Chuan Seng Tan, Guangrui Xia

Abstract: Micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around through silicon vias (TSVs) at both room temperature and elevated temperatures for Cu-filled and CNT-filled TSV samples. From the observations, we proved that the stresses near TSVs are mainly from two sources: 1) pre-existing stress before via filling, and 2) coefficients of thermal expan… ▽ More Micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around through silicon vias (TSVs) at both room temperature and elevated temperatures for Cu-filled and CNT-filled TSV samples. From the observations, we proved that the stresses near TSVs are mainly from two sources: 1) pre-existing stress before via filling, and 2) coefficients of thermal expansion (CTE) mismatch-induced stress. CTE-mismatch-induced stress is shown to dominate the compressive regime of the near-surface stress distribution around Cu-filled TSV structures, while pre-existing stress dominates the full range of the stress distribution in the CNT-filled TSV structures. Once the pre-existing stress is minimized, the total stress around CNT-filled TSVs can be minimized accordingly. Therefore, compared to Cu-filled TSVs, CNT-filled TSVs hold the potential to circumvent the hassle of stress-aware circuit layout and to solve the stress-related reliability issues. △ Less

Submitted 15 January, 2016; originally announced January 2016.

Thermal Sublimation: a Scalable and Controllable Thinning Method for the Fabrication of Few-Layer Black Phosphorus

Authors: Weijun Luo, Rui Yang, Jialun Liu, Yunlong Zhao, Wenjuan Zhu, Guangrui, Xia

Abstract: In this work, we reported uniform layer-by-layer sublimation of black phosphorus under heating below 600 K. The uniformity and crystallinity of BP samples after thermal thinning were confirmed by Raman spectra and 2D Raman imaging. A uniform and crystalline bilayer black phosphorus flake with an area of 180 um^2 was prepared with this method. No micron scale defects were observed. The sublimation… ▽ More In this work, we reported uniform layer-by-layer sublimation of black phosphorus under heating below 600 K. The uniformity and crystallinity of BP samples after thermal thinning were confirmed by Raman spectra and 2D Raman imaging. A uniform and crystalline bilayer black phosphorus flake with an area of 180 um^2 was prepared with this method. No micron scale defects were observed. The sublimation rate of BP was around 0.18 nm / min at 500 K and 1.5 nm / min at 550 K. Both room and high temperature Raman peak intensity ratio Si/A2g vs. BP thickness relations were established for in-situ thickness determination. The sublimation thinning method was shown to be a controllable and scalable approach to prepare few-layer black phosphorus. △ Less

Submitted 6 January, 2017; v1 submitted 15 January, 2016; originally announced January 2016.

Comments: New data have been included in this version, which were presented at the MRS fall meeting 2016

Nitrogen oxides under pressure stability, ionization, polymerization, and superconductivity

Authors: Dongxu Li, Artem R. Oganov, Xiao Dong, Xiang-Feng Zhou, Qiang Zhu, Guangrui Qian, Huafeng Dong

Abstract: Nitrogen oxides are textbook class of molecular compounds, with extensive industrial applications. Nitrogen and oxygen are also among the most abundant elements in the universe. We explore the N-O system at 0 K and up to 500 GPa though ab initio evolutionary simulations. Results show that two phase transformations of stable molecular NO2 exist at 7 and 64 GPa, and followed by decomposition of NO2… ▽ More Nitrogen oxides are textbook class of molecular compounds, with extensive industrial applications. Nitrogen and oxygen are also among the most abundant elements in the universe. We explore the N-O system at 0 K and up to 500 GPa though ab initio evolutionary simulations. Results show that two phase transformations of stable molecular NO2 exist at 7 and 64 GPa, and followed by decomposition of NO2 at 91 GPa. All of the NO+NO3- structures are found to be metastable at T=0 K, so experimentally reported ionic NO+NO3- is either metastable or stabilized by temperature. Upon increasing pressure, N2O5 transforms from P-1 to C2/c structure at 51 GPa. NO becomes thermodynamically stable at 198 GPa. This polymeric phase is superconducting (Tc = 2.0 K) and contains a -N-N- backbone. △ Less

Submitted 28 June, 2015; originally announced June 2015.

Diverse Chemistry of Stable Hydronitrogens, and Implications for Planetary and Materials Sciences

Authors: Guang-Rui Qian, Haiyang Niu, Chao-Hao Hu, Artem R. Oganov, Qingfeng Zeng, Huai-Ying Zhou

Abstract: Nitrogen hydrides, including ammonia (NH3), hydrazine (N2H4), hydrazoic acid (HN3) and etc, are compounds of great fundamental and applied importance. Their high-pressure behavior is important because of their abundance in giant planets and because of the hopes of discoverying high-energy-density materials. Here, we have performed a systematic investi- gation on the structural stability of N-H sys… ▽ More Nitrogen hydrides, including ammonia (NH3), hydrazine (N2H4), hydrazoic acid (HN3) and etc, are compounds of great fundamental and applied importance. Their high-pressure behavior is important because of their abundance in giant planets and because of the hopes of discoverying high-energy-density materials. Here, we have performed a systematic investi- gation on the structural stability of N-H system in a pressure range up to 800 GPa through evolutionary structure prediction simulations. Surprisingly, we found that high pressure stabilizes a series of previously unreported compounds with peculiar structural and electronic properties, such as the N4H, N3H, N2H and NH phases composed of nitrogen backbones, the N9H4 phase containing two dimensional metallic nitrogen planes and novel N8H, NH2, N3H7, NH4 and NH5 molecular phases. Another surprise is that NH3 becomes thermodynamically unstable above ~460 GPa. We found that high-pressure chemistry is much more diverse that hydrocarbon chemistry at normal conditions, leading to expectations that N-H-O and N-H-O-S systems under pressure are likely to possess richer chemistry than the known organic chemistry. This, in turn, opens a possibility of nitrogen-based life at high pressure. The predicted phase diagram of the N-H system also provides a reference for synthesis of high-energy-density materials. △ Less

Submitted 24 April, 2016; v1 submitted 17 November, 2014; originally announced November 2014.

Backbone NxH Compounds at High Pressures

Authors: Alexander F. Goncharov, Nicholas Holtgrewe, Guangrui Qian, Chaohao Hu, Artem R. Oganov, M. Somayazulu, E. Stavrou, Chris J. Pickard, Adam Berlie, Fei Yen, M. Mahmood, S. S. Lobanov, Z. Konôpková, V. B. Prakapenka

Abstract: Optical and synchrotron x-ray diffraction diamond anvil cell experiments have been combined with first principles theoretical structure predictions to investigate mixed N2 and H2 up to 55 GPa. We found the formation of oligomeric NxH (x>1) compounds using mechano- and photochemistry at pressures above 47 and 10 GPa, respectively, and room temperature. These compounds can be recovered to ambient pr… ▽ More Optical and synchrotron x-ray diffraction diamond anvil cell experiments have been combined with first principles theoretical structure predictions to investigate mixed N2 and H2 up to 55 GPa. We found the formation of oligomeric NxH (x>1) compounds using mechano- and photochemistry at pressures above 47 and 10 GPa, respectively, and room temperature. These compounds can be recovered to ambient pressure at T<130 K, whereas at room temperature, they can be metastable down to 3.5 GPa. Our results suggest new pathways for synthesis of environmentally benign high energy-density materials and alternative planetary ice. △ Less

Submitted 3 September, 2014; originally announced September 2014.

Comments: 26 pages, 12 figures, I table

Predicted Novel Hydrogen Hydrate Structures under Pressure from First Principles

Authors: Guang-Rui Qian, Andriy O. Lyakhov, Qiang Zhu, Artem R. Oganov, Xiao Dong

Abstract: Gas hydrates are systems of prime importance. In particular, hydrogen hydrates are potential materials of icy satellites and comets, and may be used for hydrogen storage. We explore the H2O-H2 system at pressures in the range 0-100 GPa with ab initio variable-composition evolutionary simulations. According to our calculation and previous experiments, the H2O-H2 system undergoes a series of transfo… ▽ More Gas hydrates are systems of prime importance. In particular, hydrogen hydrates are potential materials of icy satellites and comets, and may be used for hydrogen storage. We explore the H2O-H2 system at pressures in the range 0-100 GPa with ab initio variable-composition evolutionary simulations. According to our calculation and previous experiments, the H2O-H2 system undergoes a series of transformations with pressure, and adopts the known open-network clathrate structures (sII, C0), dense "filled ice" structures (C1, C2) and two novel hydrate phases. One of these is based on the hexagonal ice framework and has the same H2O:H2 ratio (2:1) as the C0 phase at low pressures and similar enthalpy (we name this phase Ih-C0). The other newly predicted hydrate phase has a 1:2 H2O:H2 ratio and structure based on cubic ice. This phase (which we name C3) is predicted to be thermodynamically stable above 38 GPa when including van der Waals interactions and zero-point vibrational energy, and explains previously mysterious experimental X-ray diffraction and Raman measurements. This is the hydrogen-richest hydrate and this phase has a remarkable gravimetric density (18 wt.%) of easily extractable hydrogen. △ Less

Submitted 28 March, 2014; v1 submitted 3 October, 2013; originally announced October 2013.

Control spiral wave dynamics using feedback signals from line detectors

Authors: Guoyong Yuan, Aiguo Xu, Guangrui Wang, Shigang Chen

Abstract: We numerically study trajectories of spiral-wave-cores in excitable systems modulated proportionally to the integral of the activity on the straight line, several or dozens of equi-spaced measuring points on the straight line, the double-line and the contour-line. We show the single-line feedback results in the drift of core center along a straight line being parallel to the detector. An interest… ▽ More We numerically study trajectories of spiral-wave-cores in excitable systems modulated proportionally to the integral of the activity on the straight line, several or dozens of equi-spaced measuring points on the straight line, the double-line and the contour-line. We show the single-line feedback results in the drift of core center along a straight line being parallel to the detector. An interesting finding is that the drift location in $y$ is a piecewise linear-increasing function of both the feedback line location and time delay. Similar trajectory occurs when replacing the feedback line with several or dozens of equi-spaced measuring points on the straight line. This allows to move the spiral core to the desired location along a chosen direction by measuring several or dozens of points. Under the double-line feedback, the shape of the tip trajectory representing the competition between the first and second feedback lines is determined by the distance of two lines. Various drift attractors in spiral wave controlled by square-shaped contour-line feedback are also investigated. A brief explanation is presented. △ Less

Submitted 31 March, 2010; originally announced April 2010.

Comments: 6 pages and 7 figures; Accepted for publication in EPL; Figs.5 and 6 are in JPG format

Journal ref: EPL, 90 (2010) 10013