-
Electronic structure of Ba(Zn0.875Mn0.125)2As2 studied by angle-resolved photoemission spectroscopy
Authors:
Fengfeng Zhu,
W. X. Jiang,
P. Li,
Z. Q. Wang,
H. Y. Man,
Y. Y. Li,
Canhua Liu,
D. D. Guan,
J. F. Jia,
F. L. Ning,
Weidong Luo,
D. Qian
Abstract:
Electronic structure of single crystalline Ba(Zn$_{0.875}$Mn$_{0.125}$)$_{2}$As$_{2}$, parent compound of the recently founded high-temperature ferromagnetic semiconductor, was studied by high-resolution photoemission spectroscopy (ARPES). Through systematically photon energy and polarization dependent measurements, the energy bands along the out-of-plane and in-plane directions were experimentall…
▽ More
Electronic structure of single crystalline Ba(Zn$_{0.875}$Mn$_{0.125}$)$_{2}$As$_{2}$, parent compound of the recently founded high-temperature ferromagnetic semiconductor, was studied by high-resolution photoemission spectroscopy (ARPES). Through systematically photon energy and polarization dependent measurements, the energy bands along the out-of-plane and in-plane directions were experimentally determined. Except the localized states of Mn, the measured band dispersions agree very well with the first-principle calculations of undoped BaZn$_{2}$As$_{2}$. A new feature related to Mn 3d states was identified at the binding energies of about -1.6 eV besides the previously observed feature at about -3.3 eV. We suggest that the hybridization between Mn and As orbitals strongly enhanced the density of states around -1.6 eV. Although our resolution is much better compared with previous soft X-ray photoemission experiments, no clear hybridization gap between Mn 3d states and the valence bands proposed by previous model calculations was detected.
△ Less
Submitted 11 November, 2016;
originally announced November 2016.
-
Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3
Authors:
C. Q. Han,
H. Li,
W. J. Chen,
Fengfeng Zhu,
Meng-Yu Yao,
Z. J. Li,
M. Wang,
Bo F. Gao,
D. D. Guan,
Canhua Liu,
C. L. Gao,
Dong Qian,
Jin-Feng Jia
Abstract:
Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (SrxBi2Se3) was studied. Scanning tunneling microscopy shows that most of the Sr atoms are not in the van der Waals gap. After Sr doping, the Fermi level was found to move further upward…
▽ More
Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (SrxBi2Se3) was studied. Scanning tunneling microscopy shows that most of the Sr atoms are not in the van der Waals gap. After Sr doping, the Fermi level was found to move further upwards when compared with the parent compound Bi2Se3, which is consistent with the low carrier density in this system. The topological surface state was clearly observed, and the position of the Dirac point was determined in all doped samples. The surface state is well separated from the bulk conduction bands in the momentum space. The persistence of separated topological surface state combined with small Fermi energy makes this superconducting material a very promising candidate for the time reversal invariant topological superconductor
△ Less
Submitted 27 October, 2015;
originally announced October 2015.
-
Topologically Nontrivial Bismuth(111) Thin Films Grown on Bi2Te3
Authors:
Meng-Yu Yao,
Fengfeng Zhu,
Lin Miao,
C. Q. Han,
Fang Yang,
D. D. Guan,
C. L. Gao,
Canhua Liu,
Dong Qian,
Jin-feng Jia
Abstract:
Using high-resolution angle-resolved photoemission spectroscopy, the electronic structure near the Fermi level and the topological property of the Bi(111) films grown on the Bi$_2$Te$_3$(111) substrate were studied. Very different from the bulk Bi, we found another surface band near the $\bar{M}$ point besides the two well-known surface bands on the Bi(111) surface. With this new surface band, the…
▽ More
Using high-resolution angle-resolved photoemission spectroscopy, the electronic structure near the Fermi level and the topological property of the Bi(111) films grown on the Bi$_2$Te$_3$(111) substrate were studied. Very different from the bulk Bi, we found another surface band near the $\bar{M}$ point besides the two well-known surface bands on the Bi(111) surface. With this new surface band, the bulk valence band and the bulk conduction band of Bi can be connected by the surface states. Our band mapping revealed odd number of Fermi crossings of the surface bands, which provided a direct experimental signature that Bi(111) thin films of a certain thickness on the Bi$_2$Te$_3$(111) substrate can be topologically nontrivial in three dimension.
△ Less
Submitted 14 June, 2015;
originally announced June 2015.
-
Electronic Structures of Black Phosphorus Studied by Angle-resolved Photoemission Spectroscopy
Authors:
C. Q. Han,
M. Y. Yao,
X. X. Bai,
Lin Miao,
Fengfeng Zhu,
D. D. Guan,
Shun Wang,
C. L. Gao,
Canhua Liu,
Dong Qian,
Y. Liu,
Jin-feng Jia
Abstract:
Electronic structures of single crystalline black phosphorus were studied by state-of-art angleresolved photoemission spectroscopy. Through high resolution photon energy dependence measurements, the band dispersions along out-of-plane and in-plane directions are experimentally determined. The electrons were found to be more localized in the ab-plane than that is predicted in calculations. Beside t…
▽ More
Electronic structures of single crystalline black phosphorus were studied by state-of-art angleresolved photoemission spectroscopy. Through high resolution photon energy dependence measurements, the band dispersions along out-of-plane and in-plane directions are experimentally determined. The electrons were found to be more localized in the ab-plane than that is predicted in calculations. Beside the kz-dispersive bulk bands, resonant surface state is also observed in the momentum space. Our finds strongly suggest that more details need to be considered to fully understand the electronic properties of black phosphorus theoretically.
△ Less
Submitted 28 May, 2014;
originally announced May 2014.
-
Fully Gapped s-wave-like Superconducting State and Electronic Structures in the Ir0.95Pd0.05Te2 Single Crystals with Strong Spin-orbital Coupling
Authors:
D. J. Yu,
F. Yang,
Lin Miao,
C. Q. Han,
Meng-Yu Yao,
Fengfeng Zhu,
Y. R. Song,
K. F. Zhang,
J. F. Ge,
X. Yao,
Z. Q. Zou,
Z. J. Li,
B. Gao,
D. D. Guan,
Canhua Liu,
C. L. Gao,
Dong Qian,
Jin-feng Jia
Abstract:
Due to the large spin-orbital coupling in the layered 5d-transition metal chalcogenides compound, the occurrence of superconductivity in Ir2-xPdxTe2 offers a good chance to search for possible topological superconducting states in this system. We did comprehensive studies on the superconducting properties and electronic structures of single crystalline Ir0.95Pd0.05Te2 samples. The superconducting…
▽ More
Due to the large spin-orbital coupling in the layered 5d-transition metal chalcogenides compound, the occurrence of superconductivity in Ir2-xPdxTe2 offers a good chance to search for possible topological superconducting states in this system. We did comprehensive studies on the superconducting properties and electronic structures of single crystalline Ir0.95Pd0.05Te2 samples. The superconducting gap size, critical fields and coherence length along different directions were experimentally determined. Macroscopic bulk measurements and microscopic low temperature scanning tunneling spectroscopy results suggest that Ir0.95Pd0.05Te2 possesses a BCS-like s-wave state. No sign of zero bias conductance peak were found in the vortex core at 0.4K.
△ Less
Submitted 19 February, 2014;
originally announced February 2014.
