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Phase separation dynamics in deformable droplets
Authors:
Simon Gsell,
Matthias Merkel
Abstract:
Phase separation can drive spatial organization of multicomponent mixtures. For instance in developing animal embryos, effective phase separation descriptions have been used to account for the spatial organization of different tissue types. Similarly, separation of different tissue types and the emergence of a polar organization is also observed in cell aggregates mimicking early embryonic axis fo…
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Phase separation can drive spatial organization of multicomponent mixtures. For instance in developing animal embryos, effective phase separation descriptions have been used to account for the spatial organization of different tissue types. Similarly, separation of different tissue types and the emergence of a polar organization is also observed in cell aggregates mimicking early embryonic axis formation. Here, we describe such aggregates as deformable two-phase fluid droplets, which are suspended in a fluid environment (third phase). Using hybrid finite-volume Lattice-Boltzmann simulations, we numerically explore the out-of-equilibrium routes that can lead to the polar equilibrium state of such a droplet (Janus droplet). We focus on the interplay between spinodal decomposition and advection with hydrodynamic flows driven by interface tensions, which we characterize by a Peclet number $Pe$. Consistent with previous work, for large $Pe$ the coarsening process is generally accelerated. However, for intermediate $Pe$ we observe long-lived, strongly elongated droplets, where both phases form an alternating stripe pattern. We show that these ``croissant'' states are close to mechanical equilibrium and coarsen only slowly through diffusive fluxes in an Ostwald-ripening-like process. Finally, we show that a surface tension asymmetry between both droplet phases leads to transient, rotationally symmetric states whose resolution leads to flows reminiscent of Marangoni flows. Our work highlights the importance of advection for the phase separation process in finite, deformable systems.
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Submitted 8 November, 2021;
originally announced November 2021.
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Towards wafer-scale diamond nano- and quantum technologies
Authors:
Richard Nelz,
Johannes Görlitz,
Dennis Herrmann,
Abdallah Slablab,
Michel Challier,
Mariusz Radtke,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher,
Elke Neu
Abstract:
We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure…
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We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure witnesses high crystalline quality of the diamond especially close to the growth surface, consistent with a reduced dislocation density. Using ion implantation and plasma etching, we verify the possibility to fabricate nanostructures with shallow color centers rendering our diamond material promising for fabrication of nanoscale sensing devices. As this diamond is available in wafer-sizes up to $100 mm$ it offers the opportunity to up-scale diamond-based device fabrication.
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Submitted 22 October, 2018;
originally announced October 2018.
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Site selective growth of heteroepitaxial diamond nanoislands containing single SiV centers
Authors:
Carsten Arend,
Patrick Appel,
Jonas Nils Becker,
Marcel Schmidt,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher,
Patrick Maletinsky,
Elke Neu
Abstract:
We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned ar…
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We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned areas evolve into regular arrays of (001) oriented diamond nano-islands with diameters of <500nm and a height of approx. 60 nm. In the islands, we identify single SiV color centers with narrow zero phonon lines down to 1 nm at room temperature.
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Submitted 9 February, 2016; v1 submitted 11 November, 2015;
originally announced November 2015.
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Optical signatures of silicon-vacancy spins in diamond
Authors:
Tina Muller,
Christian Hepp,
Benjamin Pingault,
Elke Neu,
Stefan Gsell,
Matthias Schreck,
Hadwig Sternschulte,
Doris Steinmueller-Nethl,
Christoph Becher,
Mete Atature
Abstract:
Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded to include different materials for their nanofabrication opportunities, and novel colour centres to realize more efficient spin-photon quantum interfaces. Of t…
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Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded to include different materials for their nanofabrication opportunities, and novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with ultrabright single photon emission predominantly into the desirable zero-phonon line. The challenge for utilizing this centre is to realise the hitherto elusive optical access to its electronic spin. Here, we report spin-tagged resonance fluorescence from the negatively charged silicon-vacancy centre. In low-strain bulk diamond spin-selective excitation under finite magnetic field reveals a spin-state purity approaching unity in the excited state. We also investigate the effect of strain on the centres in nanodiamonds and discuss how spin selectivity in the excited state remains accessible in this regime.
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Submitted 10 December, 2013;
originally announced December 2013.
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Low temperature investigations of single silicon vacancy colour centres in diamond
Authors:
Elke Neu,
Christian Hepp,
Michael Hauschild,
Stefan Gsell,
Martin Fischer,
Hadwig Sternschulte,
Doris Steinmueller-Nethl,
Matthias Schreck,
Christoph Becher
Abstract:
We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence spectroscopy in the temperature range 5-295 K. We investigate in detail the temperature dependent fine structure of the zero-phonon-line (ZPL) of the SiV centres. Th…
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We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence spectroscopy in the temperature range 5-295 K. We investigate in detail the temperature dependent fine structure of the zero-phonon-line (ZPL) of the SiV centres. The ZPL transition is affected by inhomogeneous as well as temperature dependent homogeneous broadening and blue shifts by about 20 cm-1 upon cooling from room temperature to 5 K. We employ excitation power dependent g(2) measurements to explore the temperature dependent internal population dynamics of single SiV centres and infer almost temperature independent dynamics.
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Submitted 4 March, 2013; v1 submitted 11 October, 2012;
originally announced October 2012.
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Electronic transitions of single silicon vacancy centers in the near-infrared spectral region
Authors:
Elke Neu,
Roland Albrecht,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher
Abstract:
Photoluminescence (PL) spectra of single silicon vacancy (SiV) centers frequently feature very narrow room temperature PL lines in the near-infrared (NIR) spectral region, mostly between 820 nm and 840 nm, in addition to the well known zero-phonon-line (ZPL) at approx. 738 nm [E. Neu et al., Phys. Rev. B 84, 205211 (2011)]. We here exemplarily prove for a single SiV center that this NIR PL is due…
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Photoluminescence (PL) spectra of single silicon vacancy (SiV) centers frequently feature very narrow room temperature PL lines in the near-infrared (NIR) spectral region, mostly between 820 nm and 840 nm, in addition to the well known zero-phonon-line (ZPL) at approx. 738 nm [E. Neu et al., Phys. Rev. B 84, 205211 (2011)]. We here exemplarily prove for a single SiV center that this NIR PL is due to an additional purely electronic transition (ZPL). For the NIR line at 822.7 nm, we find a room temperature linewidth of 1.4 nm (2.6 meV). The line saturates at similar excitation power as the ZPL. ZPL and NIR line exhibit identical polarization properties. Cross-correlation measurements between the ZPL and the NIR line reveal anti-correlated emission and prove that the lines originate from a single SiV center, furthermore indicating a fast switching between the transitions (0.7 ns). g(2) auto-correlation measurements exclude that the NIR line is a vibronic sideband or that it arises due to a transition from/to a meta-stable (shelving) state.
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Submitted 11 June, 2012; v1 submitted 23 April, 2012;
originally announced April 2012.
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Interference Effects of the Superconducting Pairing Wave Function due to the Fulde-Ferrell-Larkin-Ovchinnikov like State in Ferromagnet/Superconductor Bilayers
Authors:
V. I. Zdravkov,
J. Kehrle,
G. Obermeier,
A. Ullrich,
S. Gsell,
D. Lenk,
C. Müller,
R. Morari,
A. S. Sidorenko,
V. V. Ryazanov,
L. R. Tagirov,
R. Tidecks,
S. Horn
Abstract:
The theoretical description of the Fulde-Ferrell-Larkin-Ovchinnikov like state establishing in nanostructered bilayers of ferromagnetic (F) and superconducting (S) material leads to critical temperature oscillations and reentrant superconductivity as the F-layer thickness gradually increases. The experimental realization of these phenomena is an important prerequisite for the fabrication of the Fe…
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The theoretical description of the Fulde-Ferrell-Larkin-Ovchinnikov like state establishing in nanostructered bilayers of ferromagnetic (F) and superconducting (S) material leads to critical temperature oscillations and reentrant superconductivity as the F-layer thickness gradually increases. The experimental realization of these phenomena is an important prerequisite for the fabrication of the Ferromagnet/Superconductor/Ferromagnet core structure of the superconducting spin-valve. A switching of the spin-valve is only expected if such non-monotonic critical temperature behavior is observed in F/S bilayers as well as in the S/F bilayers, a combination of which the spin-valve core structure can be regarded to consist of. In our former investigations we could demonstrate the required non-monotonic behavior of the critical temperature in S/F bilayers. In this study we succeeded in the preparation of F/S bilayers, where the superconducting material is now grown on top of the ferromagnetic metal, which show deep critical temperature oscillations as a function of the ferromagnetic layer thickness as well as an extinction and recovery, i.e. a reentrant behavior, of superconductivity. Especially, the latter is necessary to obtain a spin-valve with a large critical temperature shift between the parallel and antiparallel configurations of magnetizations in the F layers.
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Submitted 13 September, 2011;
originally announced September 2011.
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Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers
Authors:
V. I. Zdravkov,
J. Kehrle,
G. Obermeier,
S. Gsell,
M. Schreck,
C. M üller,
H. A. Krug von Nidda,
J. Lindner,
J. Moosburger-Will,
E. Nold,
R. Morari,
V. V. Ryazanov,
A. S. Sidorenko,
S. Horn,
R. Tidecks,
L. R. Tagirov
Abstract:
We studied the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) like state establishing due to the proximity effect in superconducting Nb/Cu41Ni59 bilayers. Using a special wedge-type deposition technique, series of 20-35 samples could be fabricated by magnetron sputtering during one run. The layer thickness of only a few nanometers, the composition of the alloy, and the quality of interfaces were controll…
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We studied the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) like state establishing due to the proximity effect in superconducting Nb/Cu41Ni59 bilayers. Using a special wedge-type deposition technique, series of 20-35 samples could be fabricated by magnetron sputtering during one run. The layer thickness of only a few nanometers, the composition of the alloy, and the quality of interfaces were controlled by Rutherford backscattering spectrometry, high resolution transmission electron microscopy, and Auger spectroscopy. The magnetic properties of the ferromagnetic alloy layer were characterized with superconducting quantum interference device (SQUID) magnetometry. These studies yield precise information about the thickness, and demonstrate the homogeneity of the alloy composition and magnetic properties along the sample series. The dependencies of the critical temperature on the Nb and Cu41Ni59 layer thickness, Tc(dS) and Tc(dF), were investigated for constant thickness dF of the magnetic alloy layer and dS of the superconducting layer, respectively. All types of non-monotonic behaviors of Tc versus dF predicted by the theory could be realized experimentally: from reentrant superconducting behavior with a broad extinction region to a slight suppression of superconductivity with a shallow minimum. Even a double extinction of superconductivity was observed, giving evidence for the multiple reentrant behavior predicted by theory. All critical temperature curves were fitted with suitable sets of parameters. Then, Tc(dF) diagrams of a hypothetical F/S/F spin-switch core structure were calculated using these parameters. Finally, superconducting spin-switch fabrication issues are discussed in detail in view of the achieved results.
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Submitted 13 September, 2011;
originally announced September 2011.
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Fluorescence and polarization spectroscopy of single silicon vacancy centers in heteroepitaxial nanodiamonds on iridium
Authors:
Elke Neu,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher
Abstract:
We introduce an advanced material system for the production and spectroscopy of single silicon vacancy (SiV) color centers in diamond. We use microwave plasma chemical vapor deposition to synthesize heteroepitaxial nanodiamonds of approx. 160 nm in lateral size with a thickness of approx. 75 nm. These oriented 'nanoislands' combine the enhanced fluorescence extraction from subwavelength sized nano…
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We introduce an advanced material system for the production and spectroscopy of single silicon vacancy (SiV) color centers in diamond. We use microwave plasma chemical vapor deposition to synthesize heteroepitaxial nanodiamonds of approx. 160 nm in lateral size with a thickness of approx. 75 nm. These oriented 'nanoislands' combine the enhanced fluorescence extraction from subwavelength sized nanodiamonds with defined crystal orientation. The investigated SiV centers display narrow zero-phonon-lines down to 0.7 nm in the wavelength range 730-750 nm. We investigate in detail the phonon-coupling and vibronic sidebands of single SiV centers, revealing significant inhomogeneous effects. Polarization measurements reveal polarized luminescence and preferential absorption of linearly polarized light.
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Submitted 24 October, 2011; v1 submitted 18 August, 2011;
originally announced August 2011.
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Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium
Authors:
Elke Neu,
David Steinmetz,
Janine Riedrich-Moeller,
Stefan Gsell,
Martin Fischer,
Matthias Schreck,
Christoph Becher
Abstract:
We introduce a process for the fabrication of high quality, spatially isolated nano-diamonds on iridium via microwave plasma assisted CVD-growth. We perform spectroscopy of single silicon-vacancy (SiV)-centres produced during the growth of the nano-diamonds. The colour centres exhibit extraordinary narrow zero-phonon-lines down to 0.7 nm at room temperature. Single photon count rates up to 4.8 Mcp…
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We introduce a process for the fabrication of high quality, spatially isolated nano-diamonds on iridium via microwave plasma assisted CVD-growth. We perform spectroscopy of single silicon-vacancy (SiV)-centres produced during the growth of the nano-diamonds. The colour centres exhibit extraordinary narrow zero-phonon-lines down to 0.7 nm at room temperature. Single photon count rates up to 4.8 Mcps at saturation make these SiV-centres the brightest diamond based single photon sources to date. We measure for the first time the fine structure of a single SiV-centre thus confirming the atomic composition of the investigated colour centres.
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Submitted 26 November, 2010; v1 submitted 27 August, 2010;
originally announced August 2010.
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Re-entrant superconductivity in Nb/Cu(1-x)Ni(x) bilayers
Authors:
V. Zdravkov,
A. Sidorenko,
G. Obermeier,
S. Gsell,
M. Schreck,
C. Müller,
S. Horn,
R. Tidecks,
L. R. Tagirov
Abstract:
We report on the first observation of a pronounced re-entrant superconductivity phenomenon in superconductor/ferromagnetic layered systems. The results were obtained using a superconductor/ferromagnetic-alloy bilayer of Nb/Cu(1-x)Ni(x). The superconducting transition temperature T_{c} drops sharply with increasing thickness d_{CuNi} of the ferromagnetic layer, until complete suppression of super…
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We report on the first observation of a pronounced re-entrant superconductivity phenomenon in superconductor/ferromagnetic layered systems. The results were obtained using a superconductor/ferromagnetic-alloy bilayer of Nb/Cu(1-x)Ni(x). The superconducting transition temperature T_{c} drops sharply with increasing thickness d_{CuNi} of the ferromagnetic layer, until complete suppression of superconductivity is observed at d_{CuNi}= 4 nm. Increasing the Cu(1-x)Ni(x) layer thickness further, superconductivity reappears at d_{CuNi}=13 nm. Our experiments give evidence for the pairing function oscillations associated with a realization of the quasi-one dimensional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) like state in the ferromagnetic layer.
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Submitted 19 February, 2006;
originally announced February 2006.
