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Fabrication of $^{15}\textrm{NV}^{-}$ centers in diamond using a deterministic single ion implanter
Authors:
K. Groot-Berning,
G. Jacob,
C. Osterkamp,
F. Jelezko,
F. Schmidt-Kaler
Abstract:
Nitrogen Vacancy (NV) centers in diamond are a platform for several important quantum technologies, including sensing, communication and elementary quantum processors. In this letter we demonstrate the creation of NV centers by implantation using a deterministic single ion source. For this we sympathetically laser-cool single $^{15}\textrm{N}_2^+$ molecular ions in a Paul trap and extract them at…
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Nitrogen Vacancy (NV) centers in diamond are a platform for several important quantum technologies, including sensing, communication and elementary quantum processors. In this letter we demonstrate the creation of NV centers by implantation using a deterministic single ion source. For this we sympathetically laser-cool single $^{15}\textrm{N}_2^+$ molecular ions in a Paul trap and extract them at an energy of 5.9\,keV. Subsequently the ions are focused with a lateral resolution of 121(35)\,nm and are implanted into a diamond substrate without any spatial filtering by apertures or masks. After high-temperature annealing, we detect the NV centers in a confocal microscope and determine a conversion efficiency of about 0.6\,$\%$. The $^{15}\textrm{NV}$ centers are characterized by optically detected magnetic resonance (ODMR) on the hyperfine transition and coherence time.
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Submitted 6 January, 2021;
originally announced January 2021.
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Deterministic single ion implantation of rare-earth ions for nanometer resolution colour center generation
Authors:
Karin Groot-Berning,
Thomas Kornher,
Georg Jacob,
Felix Stopp,
Samuel T. Dawkins,
Roman Kolesov,
Jörg Wrachtrup,
Kilian Singer,
Ferdinand Schmidt-Kaler
Abstract:
Single dopant atoms or dopant-related defect centers in a solid state matrix provide an attractive platform for quantum simulation of topological states, for quantum computing and communication, due to their potential to realize a scalable architecture compatible with electronic and photonic integrated circuits. The production of such quantum devices calls for deterministic single atom doping tech…
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Single dopant atoms or dopant-related defect centers in a solid state matrix provide an attractive platform for quantum simulation of topological states, for quantum computing and communication, due to their potential to realize a scalable architecture compatible with electronic and photonic integrated circuits. The production of such quantum devices calls for deterministic single atom doping techniques because conventional stochastic doping techniques are cannot deliver appropriate architectures. Here, we present the fabrication of arrays of praseodymium color centers in YAG substrates, using a deterministic source of single laser-cooled Pr$^+$ ions. The beam of single Pr$^+$ ions is extracted from a Paul trap and focused down to 30(9) nm. Using a confocal microscope we determine a conversion yield into active color centers up to 50% and realizing a placement accuracy of better than 50 nm.
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Submitted 14 February, 2019;
originally announced February 2019.
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Spin Properties of Very Shallow Nitrogen Vacancy Defects in Diamond
Authors:
B. K. Ofori-Okai,
S. Pezzagna,
K. Chang,
M. Loretz,
R. Schirhagl,
Y. Tao,
B. A. Moores,
K. Groot-Berning,
J. Meijer,
C. L. Degen
Abstract:
We investigate spin and optical properties of individual nitrogen-vacancy centers located within 1-10 nm from the diamond surface. We observe stable defects with a characteristic optically detected magnetic resonance spectrum down to lowest depth. We also find a small, but systematic spectral broadening for defects shallower than about 2 nm. This broadening is consistent with the presence of a sur…
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We investigate spin and optical properties of individual nitrogen-vacancy centers located within 1-10 nm from the diamond surface. We observe stable defects with a characteristic optically detected magnetic resonance spectrum down to lowest depth. We also find a small, but systematic spectral broadening for defects shallower than about 2 nm. This broadening is consistent with the presence of a surface paramagnetic impurity layer [Tisler et al., ACS Nano 3, 1959 (2009)] largely decoupled by motional averaging. The observation of stable and well-behaved defects very close to the surface is critical for single-spin sensors and devices requiring nanometer proximity to the target.
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Submitted 9 August, 2012; v1 submitted 4 January, 2012;
originally announced January 2012.
