Showing 1–1 of 1 results for author: Grimal, V

Influence of homo-buffer layer on stress control of sputtered (Ba0.45,Sr0.55)TiO3 thin films on Pt-Si

Authors: Y. K. Vayunandana Reddy, Guillaume Guegan, Mohamed Lamhamdi, Virginie Grimal, Patrick Simon

Abstract: To engineer strain relaxation of sputtered BST thin films on Pt-Si wafers, homo-buffer layer method was applied to eliminate Pt hillock formation. Thin BST homo-buffer layers were deposited at room temperature and subsequently the main BST layer was deposited at 650°C, Pt hillock free BST films were obtained with homo-buffer thickness above 5 nm. Relatively good electrical properties were obtained… ▽ More To engineer strain relaxation of sputtered BST thin films on Pt-Si wafers, homo-buffer layer method was applied to eliminate Pt hillock formation. Thin BST homo-buffer layers were deposited at room temperature and subsequently the main BST layer was deposited at 650°C, Pt hillock free BST films were obtained with homo-buffer thickness above 5 nm. Relatively good electrical properties were obtained for BST thin films with 15 and 25 nm homo-buffer layer (T= 30 % at 5V and tan δ= 0.018). △ Less

Submitted 6 September, 2013; originally announced September 2013.

Comments: 3 pages, 5 figures