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Self-assembling of Ge quantum dots in an alumina matrix
Authors:
M. Buljan,
S. R. C. Pinto,
A. G. Rolo,
J. Martín-Sánchez,
M. J. M. Gomes,
J. Grenzer,
A. Mücklich,
S. Bernstorff,
V. Holý
Abstract:
In this work we report on a self-assembled growth of a Ge quantum dot lattice in a single 600-nm-thick Ge+Al2O3 layer during magnetron sputtering deposition of a Ge+Al2O3 mixture at an elevated substrate temperature. The self-assembly results in the formation of a well-ordered threedimensional body-centered tetragonal quantum dot lattice within the whole deposited volume. The quantum dots formed a…
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In this work we report on a self-assembled growth of a Ge quantum dot lattice in a single 600-nm-thick Ge+Al2O3 layer during magnetron sputtering deposition of a Ge+Al2O3 mixture at an elevated substrate temperature. The self-assembly results in the formation of a well-ordered threedimensional body-centered tetragonal quantum dot lattice within the whole deposited volume. The quantum dots formed are very small in size less than 4.0 nm, have a narrow size distribution and a large packing density. The parameters of the quantum dot lattice can be tuned by changing the deposition parameters. The self-ordering of the quantum dots is explained by diffusionmediated nucleation and surface-morphology effects and simulated by a kinetic Monte Carlo model.
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Submitted 21 January, 2025;
originally announced January 2025.
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In-situ measurements of dendrite tip shape selection in a metallic alloy
Authors:
H. Neumann-Heyme,
N. Shevchenko,
J. Grenzer,
K. Eckert,
C. Beckermann,
S. Eckert
Abstract:
The size and shape of the primary dendrite tips determine the principal length scale of the microstructure evolving during solidification of alloys. In-situ X-ray measurements of the tip shape in metals have been unsuccessful so far due to insufficient spatial resolution or high image noise. To overcome these limitations, high-resolution synchrotron radiography and advanced image processing techni…
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The size and shape of the primary dendrite tips determine the principal length scale of the microstructure evolving during solidification of alloys. In-situ X-ray measurements of the tip shape in metals have been unsuccessful so far due to insufficient spatial resolution or high image noise. To overcome these limitations, high-resolution synchrotron radiography and advanced image processing techniques are applied to a thin sample of a solidifying Ga-35wt.%In alloy. Quantitative in-situ measurements are performed of the growth of dendrite tips during the fast initial transient and the subsequent steady growth period, with tip velocities ranging over almost two orders of magnitude. The value of the dendrite tip shape selection parameter is found to be $σ^* = 0.0768$, which suggests an interface energy anisotropy of $\varepsilon_4 = 0.015$ for the present Ga-In alloy. The non-axisymmetric dendrite tip shape amplitude coefficient is measured to be $A_4 \approx 0.004$, which is in excellent agreement with the universal value previously established for dendrites.
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Submitted 8 June, 2022; v1 submitted 10 November, 2021;
originally announced November 2021.
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Low damping and microstructural perfection of sub-40nm-thin yttrium iron garnet films grown by liquid phase epitaxy
Authors:
Carsten Dubs,
Oleksii Surzhenko,
Ronny Thomas,
Julia Osten,
Tobias Schneider,
Kilian Lenz,
Jörg Grenzer,
René Hübner,
Elke Wendler
Abstract:
The field of magnon spintronics is experiencing an increasing interest in the development of solutions for spin-wave-based data transport and processing technologies that are complementary or alternative to modern CMOS architectures. Nanometer-thin yttrium iron garnet (YIG) films have been the gold standard for insulator-based spintronics to date, but a potential process technology that can delive…
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The field of magnon spintronics is experiencing an increasing interest in the development of solutions for spin-wave-based data transport and processing technologies that are complementary or alternative to modern CMOS architectures. Nanometer-thin yttrium iron garnet (YIG) films have been the gold standard for insulator-based spintronics to date, but a potential process technology that can deliver perfect, homogeneous large-diameter films is still lacking. We report that liquid phase epitaxy (LPE) enables the deposition of nanometer-thin YIG films with low ferromagnetic resonance losses and consistently high magnetic quality down to a thickness of 20 nm. The obtained epitaxial films are characterized by an ideal stoichiometry and perfect film lattices, which show neither significant compositional strain nor geometric mosaicity, but sharp interfaces. Their magneto-static and dynamic behavior is similar to that of single crystalline bulk YIG. We found, that the Gilbert damping coefficient alpha is independent of the film thickness and close to 1 x 10-4, and that together with an inhomogeneous peak-to-peak linewidth broadening of delta H0|| = 0.4 G, these values are among the lowest ever reported for YIG films with a thickness smaller than 40 nm. These results suggest, that nanometer-thin LPE films can be used to fabricate nano- and micro-scaled circuits with the required quality for magnonic devices. The LPE technique is easily scalable to YIG sample diameters of several inches.
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Submitted 21 November, 2019;
originally announced November 2019.
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Magneto-structural correlations in a systematically disordered B2 lattice
Authors:
Jonathan Ehrler,
Biplab Sanyal,
Jörg Grenzer,
Shengqiang Zhou,
Roman Böttger,
Benedikt Eggert,
Heiko Wende,
Jürgen Lindner,
Jürgen Fassbender,
Christoph Leyens,
Kay Potzger,
Rantej Bali
Abstract:
Ferromagnetism in certain B2 ordered alloys such as Fe$_{60}$Al$_{40}$ can be switched on, and tuned, via antisite disordering of the atomic arrangement. The disordering is accompanied by a $\sim$1 % increase in the lattice parameter. Here we performed a systematic disordering of B2 Fe$_{60}$Al$_{40}$ thin films, and obtained correlations between the order parameter ($S$), lattice parameter (…
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Ferromagnetism in certain B2 ordered alloys such as Fe$_{60}$Al$_{40}$ can be switched on, and tuned, via antisite disordering of the atomic arrangement. The disordering is accompanied by a $\sim$1 % increase in the lattice parameter. Here we performed a systematic disordering of B2 Fe$_{60}$Al$_{40}$ thin films, and obtained correlations between the order parameter ($S$), lattice parameter ($a_0$), and the induced saturation magnetization ($M_{s}$). As the lattice is gradually disordered, a critical point occurs at 1-$S$=0.6 and $a_0$=291 pm, where a sharp increase of the $M_{s}$ is observed. DFT calculations suggest that below the critical point the system magnetically behaves as it would still be fully ordered, whereas above, it is largely the increase of $a_0$ in the disordered state that determines the $M_{s}$. The insights obtained here can be useful for achieving tailored magnetic properties in alloys through disordering.
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Submitted 19 November, 2019;
originally announced November 2019.
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Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Authors:
Slawomir Prucnal,
Yonder Berencén,
Mao Wang,
Jörg Grenzer,
Matthias Voelskow,
Rene Hübner,
Yuji Yamamoto,
Alexander Scheit,
Florian Bärwolf,
Vitaly Zviagin,
Rüdiger Schmidt-Grund,
Marius Grundmann,
Jerzy Żuk,
Marcin Turek,
Andrzej Droździel,
Krzysztof Pyszniak,
Robert Kudrawiec,
Maciej P. Polak,
Lars Rebohle,
Wolfgang Skorupa,
Manfred Helm,
Shengqiang Zhou
Abstract:
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of…
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Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology.
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Submitted 7 January, 2019;
originally announced January 2019.
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Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing
Authors:
Yufang Xie,
Ye Yuan,
Mao Wang,
Chi Xu,
René Hübner,
Jörg Grenzer,
Yu-Jia Zeng,
Manfred Helm,
Shengqiang Zhou,
Slawomir Prucnal
Abstract:
Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at…
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Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at the ambient pressure. The single crystalline Mn5Ge3 is ferromagnetic with a Curie temperature of 283 K. Both the c-axis of hexagonal Mn5Ge3 and the magnetic easy axis are parallel to the Ge (100) surface. The millisecond-range flash epitaxy provides a new avenue for the fabrication of Ge-based spin-injectors fully compatible with CMOS technology.
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Submitted 23 October, 2018;
originally announced October 2018.
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Non-thermal nature of photo-induced insulator-to-metal transition in NbO$_2$
Authors:
Rakesh Rana,
J. Michael Klopf,
Jörg Grenzer,
Harald Schneider,
Manfred Helm,
Alexej Pashkin
Abstract:
We study the photo-induced metallization process in niobium dioxide NbO$_2$. This compound undergoes the thermal insulator-to-metal transition at the remarkably high temperature of 1080 K. Our optical pump - terahertz probe measurements reveal the ultrafast switching of the film on a sub-picosecond timescale and the formation of a metastable metallic phase when the incident pump fluence exceeds th…
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We study the photo-induced metallization process in niobium dioxide NbO$_2$. This compound undergoes the thermal insulator-to-metal transition at the remarkably high temperature of 1080 K. Our optical pump - terahertz probe measurements reveal the ultrafast switching of the film on a sub-picosecond timescale and the formation of a metastable metallic phase when the incident pump fluence exceeds the threshold of 10 mJ/cm$^2$. Remarkably, this threshold value corresponds to the deposited energy which is capable of heating NbO$_2$ only up to 790 K, thus, evidencing the non-thermal character of the photo-induced insulator-to-metal transition. We also observe an enhanced formation of the metallic phase above the second threshold of 17.5 mJ/cm$^2$ which corresponds to the onset of the thermal switching. The transient optical conductivity in the metastable phase can be modeled using the Drude-Smith model confirming its metallic character. The present observation of non-thermal transition in NbO$_2$ can serve as an important test bed for understanding photo-induced phenomena in strongly correlated oxides.
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Submitted 20 September, 2018; v1 submitted 19 September, 2018;
originally announced September 2018.
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Stress control of tensile-strained In$_{1-x}$Ga$_{x}$P nanomechanical string resonators
Authors:
Maximilian Bückle,
Valentin C. Hauber,
Garrett D. Cole,
Claus Gärtner,
Ute Zeimer,
Jörg Grenzer,
Eva M. Weig
Abstract:
We investigate the mechanical properties of freely suspended nanostrings fabricated from tensile-stressed, crystalline In$_{1-x}$Ga$_{x}$P. The intrinsic strain is a consequence of the epitaxial growth given by the lattice mismatch between the thin film and the substrate which is confirmed by x-ray diffraction measurements. The flexural eigenfrequencies of the nanomechanical string resonators reve…
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We investigate the mechanical properties of freely suspended nanostrings fabricated from tensile-stressed, crystalline In$_{1-x}$Ga$_{x}$P. The intrinsic strain is a consequence of the epitaxial growth given by the lattice mismatch between the thin film and the substrate which is confirmed by x-ray diffraction measurements. The flexural eigenfrequencies of the nanomechanical string resonators reveal an orientation dependent stress with a maximum value of 650 MPa. The angular dependence is explained by a combination of anisotropic Young's modulus and a change of elastic properties caused by defects. As a function of the crystal orientation a stress variation of up to 50 % is observed. This enables fine tuning of the tensile stress for any given Ga content $x$, which implies interesting prospects for the study of high Q nanomechanical systems.
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Submitted 15 November, 2018; v1 submitted 29 August, 2018;
originally announced August 2018.
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Up to 40 % reduction of the GaAs band gap energy via strain engineering in core/shell nanowires
Authors:
L. Balaghi,
G. Bussone,
R. Grifone,
R. Hübner,
J. Grenzer,
M. Ghorbani-Asl,
A. Krasheninnikov,
H. Schneider,
M. Helm,
E. Dimakis
Abstract:
The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we demonstrate that the GaAs core in GaAs/In(x)Ga(1-x)As or GaAs/In(x)Al(1-x)As core/shell nanowires can sustain unusually large misfit strains that would have been impos…
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The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we demonstrate that the GaAs core in GaAs/In(x)Ga(1-x)As or GaAs/In(x)Al(1-x)As core/shell nanowires can sustain unusually large misfit strains that would have been impossible in conventional thin-film heterostructures. The built-in strain in the core can be regulated via the composition and the thickness of the shell. Thick enough shells become almost strain-free, whereas the thin core undergoes a predominantly-hydrostatic tensile strain, which causes the reduction of the GaAs band gap energy. For the highest strain of 7 % in this work (obtained for x=0.54), a remarkable reduction of the band gap by 40 % was achieved in agreement with theoretical calculations. Such strong modulation of its electronic properties renders GaAs suitable for near-infrared nano-photonics and presumably high electron mobility nano-transistors.
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Submitted 28 March, 2018;
originally announced March 2018.
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Magnetic anisotropy in antiferromagnetic hexagonal MnTe
Authors:
D. Kriegner,
H. Reichlova,
J. Grenzer,
W. Schmidt,
E. Ressouche,
J. Godinho,
T. Wagner,
S. Y. Martin,
A. B. Shick,
V. V. Volobuev,
G. Springholz,
V. Holý,
J. Wunderlich,
T. Jungwirth,
K. Výborný
Abstract:
Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies.
The easy axes of the magnetic mome…
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Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies.
The easy axes of the magnetic moments within the hexagonal basal plane are determined to be along $\left<1\bar100\right>$ directions. The spin-flop transition and concomitant repopulation of domains in strong magnetic fields is observed.
Using epitaxially induced strain the onset of the spin-flop transition changes from $\sim2$~T to $\sim0.5$~T for films grown on InP and SrF$_2$ substrates, respectively.
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Submitted 17 September, 2018; v1 submitted 23 October, 2017;
originally announced October 2017.
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Bandgap narrowing in Mn doped GaAs probed by room-temperature photoluminescence
Authors:
S. Prucnal,
K. Gao,
I. Skorupa,
L. Rebohle,
L. Vines,
H. Schmidt,
M. Khalid,
Y. Wang,
E. Weschke,
W. Skorupa,
J. Grenzer,
R. Huebner,
M. Helm,
S. Zhou
Abstract:
The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here we present room temperature photoluminescence and ellipsometry measurements of Ga_{100%-x}Mn_{x}As alloy. Th…
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The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here we present room temperature photoluminescence and ellipsometry measurements of Ga_{100%-x}Mn_{x}As alloy. The up-shift of the valence-band is proven by the red shift of the room temperature near band gap emission from the Ga_{100%-x}Mn_{x}As alloy with increasing Mn content. It is shown that even a doping by 0.02 at.% of Mn affects the valence-band edge and it merges with the impurity band for a Mn concentration as low as 0.6 at.%. Both X-ray diffraction pattern and high resolution cross-sectional TEM images confirmed full recrystallization of the implanted layer and GaMnAs alloy formation.
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Submitted 30 October, 2015;
originally announced October 2015.
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Ion irradiation effects on a magnetic Si/Ni/Si trilayer and lateral magnetic-nonmagnetic multistrip patterning by focused ion beam
Authors:
B. N. Dev,
N. Banu,
J. Fassbender,
J. Grenzer,
N. Schell,
L. Bischoff,
R. Groetzschel,
J. McCord
Abstract:
Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(10 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a standard 30 keV Ga ion beam at various fluences. Analyses were carried out by Rutherford backscattering spectrometry, X-ray reflectivity, magnetooptical Kerr ef…
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Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(10 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a standard 30 keV Ga ion beam at various fluences. Analyses were carried out by Rutherford backscattering spectrometry, X-ray reflectivity, magnetooptical Kerr effect (MOKE) measurements and MOKE microscopy. With increasing ion fluence, the coercivity as well as Kerr rotation decreases. A threshold ion fluence has been identified, where ferromagnetism of the Ni layer is lost at room temperature and due to Si incorporation into the Ni layer, a Ni0.68Si0.32 alloy layer is formed. This fluence was used in FIB irradiation of parallel 50 nm wide stripes, leaving 1 micrometer wide unirradiated stripes in between. MOKE microscopy on this FIB-patterned sample has revealed interacting magnetic domains across several stripes. Considering shape anisotropy effects, which would favor an alignment of magnetization parallel to the stripe axis, the opposite behavior is observed. Magneto-elastic effects introducing a stress-induced anisotropy component oriented perpendicular to the stripe axis are the most plausible explanation for the observed behavior.
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Submitted 14 July, 2015;
originally announced July 2015.
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GaMnN epitaxial films with high magnetization
Authors:
Gerd Kunert,
Sylwia Dobkowska,
Tian Li,
Helfried Reuther,
Carsten Kruse,
Stephan Figge,
Rafal Jakiela,
Alberta Bonanni,
Jörg Grenzer,
Wiktor Stefanowicz,
Maciej Sawicki,
Tomasz Dietl,
Detlef Hommel
Abstract:
We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribu…
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We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribution is indicated by transmission electron microscopy, no Mn-rich clusters are present for optimized growth conditions. A linear increase of the c-lattice parameter with increasing Mn concentration is found using x-ray diffraction. The ferromagnetic behavior is confirmed by superconducting quantum-interference measurements showing saturation magnetizations of up to 150 emu/cm^3.
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Submitted 17 May, 2012; v1 submitted 15 May, 2012;
originally announced May 2012.
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Ferromagnetism and suppression of metallic clusters in Fe implanted ZnO - a phenomenon related to defects?
Authors:
Shengqiang Zhou,
K. Potzger,
G. Talut,
H. Reuther,
K. Kuepper,
J. Grenzer,
Qingyu Xu,
A. Muecklich M. Helm,
J. Fassbender,
E. Arenholz
Abstract:
We investigated ZnO(0001) single crystals annealed in high vacuum with respect to their magnetic properties and cluster formation tendency after implant-doping with Fe. While metallic Fe cluster formation is suppressed, no evidence for the relevance of the Fe magnetic moment for the observed ferromagnetism was found. The latter along with the cluster suppression is discussed with respect to defe…
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We investigated ZnO(0001) single crystals annealed in high vacuum with respect to their magnetic properties and cluster formation tendency after implant-doping with Fe. While metallic Fe cluster formation is suppressed, no evidence for the relevance of the Fe magnetic moment for the observed ferromagnetism was found. The latter along with the cluster suppression is discussed with respect to defects in the ZnO host matrix, since the crystalline quality of the substrates was lowered due to the preparation as observed by x-ray diffraction.
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Submitted 4 August, 2009;
originally announced August 2009.
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Room temperature ferromagnetism in carbon-implanted ZnO
Authors:
Shengqiang Zhou,
Qingyu Xu,
Kay Potzger,
Georg Talut,
Rainer Groetzschel,
Juergen Fassbender,
Mykola Vinnichenko,
Joerg Grenzer,
Manfred Helm,
Holger Hochmuth,
Michael Lorenz,
Marius Grundmann,
Heidemarie Schmidt
Abstract:
Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e. ion implantation, and (2)…
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Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e. ion implantation, and (2) the chemical involvement of carbon in the ferromagnetism is indirectly proven.
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Submitted 21 November, 2008;
originally announced November 2008.
