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Delayed luminescence and thermoluminescence in laboratory-grown diamonds
Authors:
Jiahui Zhao,
Ben L. Green,
Ben G. Breeze,
Hengxin Yuan,
Troy Ardon,
Wuyi Wang,
Mark E. Newton
Abstract:
The blue-green phosphorescence/thermoluminescence is most commonly observed in diamonds following excitation at or above the indirect band gap and has been explained by a substitutional nitrogen-boron donor-acceptor pair recombination model. Orange and red phosphorescence have also been frequently observed in lab-grown near-colourless high-pressure high-temperature diamonds following optical excit…
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The blue-green phosphorescence/thermoluminescence is most commonly observed in diamonds following excitation at or above the indirect band gap and has been explained by a substitutional nitrogen-boron donor-acceptor pair recombination model. Orange and red phosphorescence have also been frequently observed in lab-grown near-colourless high-pressure high-temperature diamonds following optical excitation, and their luminescence mechanisms are shown to be different from that of the blue-green phosphorescence. The physics of the orange and red luminescence and phosphorescence bands including the optical-excitation dependency (UV-NIR), temperature dependency (20 - 573 K), and related charge transfer process are investigated by a combination of self-built time-resolved imaging/spectroscopic techniques. In this paper, an alternative model for long-lived phosphorescence based on charge trapping is proposed to explain the orange phosphorescence/ thermoluminescence band. Additionally, the red phosphorescence band are attributed to point defect which possibly has a three-level phosphorescence system.
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Submitted 16 July, 2024;
originally announced July 2024.
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Extended T2 times of shallow implanted NV in chemically mechanically polished diamond
Authors:
S. Tyler,
J. Newland,
P. Hepworth,
A. Wijesekara,
I. R. Gullick,
M. L. Markham,
M. E. Newton,
B. L. Green
Abstract:
Mechanical polishing of diamond is known to be detrimental to the spin lifetime and strain environment of near-surface defects. By utilising a chemical mechanical polishing (CMP) process, we demonstrate that we can achieve 13C-limited spin lifetimes of shallow implanted (<34 nm) NV centres in an industrially scalable process. We compare spin lifetimes (T2) of three diamonds processed with CMP with…
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Mechanical polishing of diamond is known to be detrimental to the spin lifetime and strain environment of near-surface defects. By utilising a chemical mechanical polishing (CMP) process, we demonstrate that we can achieve 13C-limited spin lifetimes of shallow implanted (<34 nm) NV centres in an industrially scalable process. We compare spin lifetimes (T2) of three diamonds processed with CMP with one processed by inductively-coupled plasma reactive ion etching (ICP-RIE), and observe an increased median T2 of 355 microseconds in the CMP-processed samples for 15NV centres implanted and annealed under identical conditions.
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Submitted 17 May, 2024;
originally announced May 2024.
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Phosphorescence and donor-acceptor pair recombination in laboratory-grown diamonds
Authors:
Jiahui Zhao,
Ben L. Green,
Ben G. Breeze,
Mark E. Newton
Abstract:
Intense "blue-green" phosphorescence is commonly observed in near colourless lab-grown high-pressure high-temperature (HPHT) diamonds following optical excitation at or above the indirect bandgap. We have employed a holistic combination of optically-excited time-resolved techniques (in addition to standard spectroscopic characterisation techniques) to study the physics of this long-lived phosphore…
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Intense "blue-green" phosphorescence is commonly observed in near colourless lab-grown high-pressure high-temperature (HPHT) diamonds following optical excitation at or above the indirect bandgap. We have employed a holistic combination of optically-excited time-resolved techniques (in addition to standard spectroscopic characterisation techniques) to study the physics of this long-lived phosphorescence and understand luminescence-related charge transfer processes.
It is shown that the properties of the broad "blue-green" luminescence and phosphorescence band can be fully explained by emission from neutral substitutional nitrogen-boron donor-acceptor pairs ($\text{N}_\text{S}^0$...$\text{B}_\text{S}^0$) , once the configurational change between charge states is considered, and both tunneling between defects and thermal ionization of donors and acceptors is considered. Significant concentrations of metastable $\text{N}_\text{S}^-$, are identified after optical excitation at or above the indirect bandgap. $\text{N}_\text{S}^-$ is much shallower ($\sim$0.2 eV) than previously thought and plays a key role in resetting the $\text{N}_\text{S}^0$...$\text{B}_\text{S}^0$ donor-acceptor pairs.
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Submitted 2 June, 2023;
originally announced June 2023.
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Long Spin Coherence Times of Nitrogen Vacancy Centres in Milled Nanodiamonds
Authors:
B. D. Wood,
G. A. Stimpson,
J. E. March,
Y. N. D. Lekhai,
C. J. Stephen,
B. L. Green,
A. C. Frangeskou,
L. Ginés,
S. Mandal,
O. A. Williams,
G. W. Morley
Abstract:
Nanodiamonds containing negatively charged nitrogen vacancy centres (${\text{NV}}^{-}$) have applications as localized sensors in biological material and have been proposed as a platform to probe the macroscopic limits of spatial superposition and the quantum nature of gravity. A key requirement for these applications is to obtain nanodiamonds containing ${\text{NV}}^{-}$ with long spin coherence…
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Nanodiamonds containing negatively charged nitrogen vacancy centres (${\text{NV}}^{-}$) have applications as localized sensors in biological material and have been proposed as a platform to probe the macroscopic limits of spatial superposition and the quantum nature of gravity. A key requirement for these applications is to obtain nanodiamonds containing ${\text{NV}}^{-}$ with long spin coherence times. Using milling to fabricate nanodiamonds processes the full 3D volume of the bulk material at once, unlike etching, but has, up to now, limited ${\text{NV}}^{-}$ spin coherence times. Here, we use natural isotopic abundance nanodiamonds produced by ${\text{Si}}_{3}{\text{N}}_{4}$ ball milling of bulk diamond grown by chemical vapour deposition with an average single substitutional nitrogen concentration of $121 ~\text{ppb}$. We show that the electron spin coherence times of ${\text{NV}}^{-}$ centres in these nanodiamonds can exceed $400 ~μ\text{s}$ at room temperature with dynamical decoupling. Scanning electron microscopy provides images of the specific nanodiamonds containing ${\text{NV}}^{-}$ for which a spin coherence time was measured.
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Submitted 3 May, 2022; v1 submitted 3 December, 2021;
originally announced December 2021.
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Memory Function Representation for the Electrical Conductivity of Solids
Authors:
Brett R. Green,
Maria Troppenz,
Santiago Rigamonti,
Claudia Draxl,
Jorge O. Sofo
Abstract:
We derive a formula for the electrical conductivity of solids that includes relaxation, dissipation, and quantum coherence. The derivation is based on the Kubo formula, with a Mori memory function approach to include dissipation effects at all orders in the relaxation interaction. It offers a practical method to evaluate the conductivity with electronic-structure codes and avoids the complications…
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We derive a formula for the electrical conductivity of solids that includes relaxation, dissipation, and quantum coherence. The derivation is based on the Kubo formula, with a Mori memory function approach to include dissipation effects at all orders in the relaxation interaction. It offers a practical method to evaluate the conductivity with electronic-structure codes and avoids the complications and limitations of the Kubo formula in the thermodynamic limit. The derivation of our formula provides a method applicable to other transport coefficients and correlation functions.
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Submitted 6 October, 2021;
originally announced October 2021.
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Decoration of growth sector boundaries with single nitrogen vacancy centres in as-grown single crystal HPHT synthetic diamond
Authors:
Philip L. Diggle,
Ulrika F. S. D'Haenens-Johansson,
Ben L. Green,
Christopher M. Welbourn,
Thu Nhi Tran Thi,
Andrey Katrusha,
Wuyi Wang,
Mark E. Newton
Abstract:
Large (> 100 mm$^3$), relatively pure (type II) and low birefringence single crystal diamond can be produced by high pressure high temperature (HPHT) synthesis. In this study we examine a HPHT sample of good crystalline perfection, containing less than 1 ppb (part per billion carbon atoms) of boron impurity atoms in the {001} growth sector and only tens of ppb of nitrogen impurity atoms. It is sho…
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Large (> 100 mm$^3$), relatively pure (type II) and low birefringence single crystal diamond can be produced by high pressure high temperature (HPHT) synthesis. In this study we examine a HPHT sample of good crystalline perfection, containing less than 1 ppb (part per billion carbon atoms) of boron impurity atoms in the {001} growth sector and only tens of ppb of nitrogen impurity atoms. It is shown that the boundaries between {111} and {113} growth sectors are decorated by negatively charged nitrogen vacancy centres (NV$^-$): no decoration is observed at any other type of growth sector interface. This decoration can be used to calculated the relative {111} and {113} growth rates. The bulk (001) sector contains concentrations of luminescent point defects (excited with 488 and 532 nm wavelengths) below 10$^{11}$ cm$^{-3}$ (10$^{-3}$ ppb). We observe the negatively charged silicon-vacancy (SiV$^-$) defect in the bulk {111} sectors along with a zero phonon line emission associated with a nickel defect at 884 nm (1.40 eV). No preferential orientation is seen for either NV$^-$ or SiV$^-$ defects, but the nickel related defect is oriented with its trigonal axis along the <111> sector growth direction. Since the NV$^-$ defect is expected to readily re-orientate at HPHT diamond growth temperatures, no preferential orientation is expected for this defect but the lack of preferential orientation of SiV$^-$ in {111} sectors is not explained.
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Submitted 18 February, 2020;
originally announced February 2020.
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Landau Level Phases in Bilayer Graphene under Pressure at Charge Neutrality
Authors:
Brett R. Green,
Jorge O. Sofo
Abstract:
Bilayer graphene in a magnetic field hosts a variety of ordered phases built from eight Landau levels close in energy to the neutrality point. These levels are characterized by orbital $n=0,1$, valley $ξ=+,-$ and spin $σ=\uparrow,\downarrow$; their relative energies depend strongly on the Coulomb interaction, magnetic field, and interlayer bias. We treat interactions at the Hartree-Fock level, inc…
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Bilayer graphene in a magnetic field hosts a variety of ordered phases built from eight Landau levels close in energy to the neutrality point. These levels are characterized by orbital $n=0,1$, valley $ξ=+,-$ and spin $σ=\uparrow,\downarrow$; their relative energies depend strongly on the Coulomb interaction, magnetic field, and interlayer bias. We treat interactions at the Hartree-Fock level, including the effects of metallic gates, layer separation, spatial extent of the $p_z$ orbitals, all Slonczewski-Weiss-McClure tight-binding parameters, and pressure. We obtain the ground state as function of the applied magnetic field, bias, and pressure. The gates, layer separation and extent of the $p_z$ orbitals weaken the Coulomb interaction at different length scales; these effects distort the phase diagram but do not change its topology. However, previously-predicted continuous transitions become discontinuous when all tight-binding parameters are included nonperturbatively. We find that pressure increases the importance of the noninteracting scale with respect to the Coulomb energy, which drives phase transitions to occur at lower fields. This brings two orbitally polarized states not yet predicted or observed into the experimentally accessible region of the phase diagram, in addition to previously-identified valley-, spin-, and partially orbitally polarized states.
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Submitted 13 February, 2020;
originally announced February 2020.
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Doubly-charged silicon vacancy center, photochromism, and Si-N complexes in co-doped diamond
Authors:
B G Breeze,
C J Meara,
X X Wu,
C P Michaels,
R Gupta,
P L Diggle,
M W Dale,
B L Cann,
T Ardon,
U F S D'Haenens-Johansson,
I Friel,
M J Rayson,
P R Briddon,
J P Goss,
M E Newton,
B L Green
Abstract:
We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a silicon-vacancy complex decorated with a nearest-neighbor nitrogen, SiVN, supported by theoretical calculations. Samples containing silicon and nitrogen are shown to…
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We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a silicon-vacancy complex decorated with a nearest-neighbor nitrogen, SiVN, supported by theoretical calculations. Samples containing silicon and nitrogen are shown to be heavily photochromic, with the dominant visible changes due to the loss of SiV0/- and gain in the optically-inactive SiV2-.
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Submitted 5 February, 2020;
originally announced February 2020.
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Non-perturbative high-harmonic generation in the three-dimensional Dirac semimetal Cd$_3$As$_2$
Authors:
Sergey Kovalev,
Renato M. A. Dantas,
Semyon Germanskiy,
Jan-Christoph Deinert,
Bertram Green,
Igor Ilyakov,
Nilesh Awari,
Min Chen,
Mohammed Bawatna,
Jiwei Ling,
Faxian Xiu,
Paul H. M. van Loosdrecht,
Piotr Surówka,
Takashi Oka,
Zhe Wang
Abstract:
Harmonic generation is a general characteristic of driven nonlinear systems, and serves as an efficient tool for investigating the fundamental principles that govern the ultrafast nonlinear dynamics. In atomic gases, high-harmonic radiation is produced via a three-step process of ionization, acceleration, and recollision by strong-field infrared laser. This mechanism has been intensively investiga…
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Harmonic generation is a general characteristic of driven nonlinear systems, and serves as an efficient tool for investigating the fundamental principles that govern the ultrafast nonlinear dynamics. In atomic gases, high-harmonic radiation is produced via a three-step process of ionization, acceleration, and recollision by strong-field infrared laser. This mechanism has been intensively investigated in the extreme ultraviolet and soft X-ray regions, forming the basis of attosecond research. In solid-state materials, which are characterized by crystalline symmetry and strong interactions, yielding of harmonics has just recently been reported. The observed high-harmonic generation was interpreted with fundamentally different mechanisms, such as interband tunneling combined with dynamical Bloch oscillations, intraband thermodynamics and nonlinear dynamics, and many-body electronic interactions. Here, in a distinctly different context of three-dimensional Dirac semimetal, we report on experimental observation of high-harmonic generation up to the seventh order driven by strong-field terahertz pulses. The observed non-perturbative high-harmonic generation is interpreted as a generic feature of terahertz-field driven nonlinear intraband kinetics of Dirac fermions. We anticipate that our results will trigger great interest in detection, manipulation, and coherent control of the nonlinear response in the vast family of three-dimensional Dirac and Weyl materials.
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Submitted 4 November, 2019;
originally announced November 2019.
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Experimental evidence of inertial dynamics in ferromagnets
Authors:
Kumar Neeraj,
Nilesh Awari,
Sergey Kovalev,
Debanjan Polley,
Nanna Zhou Hagström,
Sri Sai Phani Kanth Arekapudi,
Anna Semisalova,
Kilian Lenz,
Bertram Green,
Jan-Christoph Deinert,
Igor Ilyakov,
Min Chen,
Mohammed Bowatna,
Valentino Scalera,
Massimiliano d'Aquino,
Claudio Serpico,
Olav Hellwig,
Jean-Eric Wegrowe,
Michael Gensch,
Stefano Bonetti
Abstract:
The understanding of how spins move at pico- and femtosecond time scales is the goal of much of modern research in condensed matter physics, with implications for ultrafast and more energy-efficient data storage. However, the limited comprehension of the physics behind this phenomenon has hampered the possibility of realising a commercial technology based on it. Recently, it has been suggested tha…
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The understanding of how spins move at pico- and femtosecond time scales is the goal of much of modern research in condensed matter physics, with implications for ultrafast and more energy-efficient data storage. However, the limited comprehension of the physics behind this phenomenon has hampered the possibility of realising a commercial technology based on it. Recently, it has been suggested that inertial effects should be considered in the full description of the spin dynamics at these ultrafast time scales, but a clear observation of such effects in ferromagnets is still lacking. Here, we report the first direct experimental evidence of inertial spin dynamics in ferromagnetic thin films in the form of a nutation of the magnetisation at a frequency of approximately 0.6 THz. This allows us to evince that the angular momentum relaxation time in ferromagnets is on the order of 10 ps.
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Submitted 24 October, 2019;
originally announced October 2019.
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Phase-resolved Higgs response in superconducting cuprates
Authors:
Hao Chu,
Min-Jae Kim,
Kota Katsumi,
Sergey Kovalev,
Robert David Dawson,
Lukas Schwarz,
Naotaka Yoshikawa,
Gideok Kim,
Daniel Putzky,
Zhi Zhong Li,
Hélène Raffy,
Semyon Germanskiy,
Jan-Christoph Deinert,
Nilesh Awari,
Igor Ilyakov,
Bertram Green,
Min Chen,
Mohammed Bawatna,
Georg Cristiani,
Gennady Logvenov,
Yann Gallais,
Alexander V. Boris,
Bernhard Keimer,
Andreas P. Schnyder,
Dirk Manske
, et al. (4 additional authors not shown)
Abstract:
In high energy physics, the Higgs field couples to gauge bosons and fermions and gives mass to their elementary excitations. Experimentally, such couplings can be inferred from the decay product of the Higgs boson, i.e. the scalar (amplitude) excitation of the Higgs field. In superconductors, Cooper pairs bear a close analogy to the Higgs field. Interaction between the Cooper pairs and other degre…
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In high energy physics, the Higgs field couples to gauge bosons and fermions and gives mass to their elementary excitations. Experimentally, such couplings can be inferred from the decay product of the Higgs boson, i.e. the scalar (amplitude) excitation of the Higgs field. In superconductors, Cooper pairs bear a close analogy to the Higgs field. Interaction between the Cooper pairs and other degrees of freedom provides dissipation channel for the amplitude mode, which may reveal important information about the microscopic pairing mechanism. To this end, we investigate the Higgs (amplitude) mode of several cuprate thin films using phase-resolved terahertz third harmonic generation (THG). In addition to the heavily damped Higgs mode itself, we observe a universal jump in the phase of the driven Higgs oscillation as well as a non-vanishing THG above Tc. These findings indicate coupling of the Higgs mode to other collective modes and potentially a nonzero pairing amplitude above Tc.
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Submitted 5 May, 2020; v1 submitted 20 January, 2019;
originally announced January 2019.
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Distribution of volume, microvoid percolation, and packing density in globular proteins
Authors:
Jenny Farmer,
Sheridan B. Green,
Donald J. Jacobs
Abstract:
A fast and accurate grid-based method with low memory requirement is presented to calculate volume characteristics in molecular systems. The distribution of volume and packing density is characterized in globular proteins, where void space is decomposed into microvoid volume and cavities based on a spherical test probe with variable radius. A scan over test probe radius is mapped onto a site perco…
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A fast and accurate grid-based method with low memory requirement is presented to calculate volume characteristics in molecular systems. The distribution of volume and packing density is characterized in globular proteins, where void space is decomposed into microvoid volume and cavities based on a spherical test probe with variable radius. A scan over test probe radius is mapped onto a site percolation problem for microvoid volume. Finite-size scaling is applied to determine critical exponents, which are found to be consistent with connectivity percolation exponents in three dimensions. Disparate results in the literature regarding packing density in the core of a protein compared to on its surface, and with respect to protein size, is elucidated in terms of microvoid volume within a unified implicit-solvent model. By parameterizing the model to match the results of explicit-solvent models that agree with experimental data, we verify that packing density within globular proteins is spatially uniform and independent of protein size.
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Submitted 19 October, 2018;
originally announced October 2018.
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Laser writing of individual atomic defects in a crystal with near-unity yield
Authors:
Yu-Chen Chen,
Benjamin Griffiths,
Laiyi Weng,
Shannon Nicley,
Shazeaa N. Ishmael,
Yashna Lekhai,
Sam Johnson,
Colin J. Stephen,
Ben L. Green,
Gavin W. Morley,
Mark E. Newton,
Martin J. Booth,
Patrick S. Salter,
Jason M. Smith
Abstract:
Atomic defects in wide band gap materials show great promise for development of a new generation of quantum information technologies, but have been hampered by the inability to produce and engineer the defects in a controlled way. The nitrogen-vacancy (NV) color center in diamond is one of the foremost candidates, with single defects allowing optical addressing of electron spin and nuclear spin de…
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Atomic defects in wide band gap materials show great promise for development of a new generation of quantum information technologies, but have been hampered by the inability to produce and engineer the defects in a controlled way. The nitrogen-vacancy (NV) color center in diamond is one of the foremost candidates, with single defects allowing optical addressing of electron spin and nuclear spin degrees of freedom with potential for applications in advanced sensing and computing. Here we demonstrate a method for the deterministic writing of individual NV centers at selected locations with high positioning accuracy using laser processing with online fluorescence feedback. This method provides a new tool for the fabrication of engineered materials and devices for quantum technologies and offers insight into the diffusion dynamics of point defects in solids.
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Submitted 11 July, 2018;
originally announced July 2018.
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Three-dimensional solid-state qubit arrays with long-lived spin coherence
Authors:
C. J. Stephen,
B. L. Green,
Y. N. D. Lekhai,
L. Weng,
P. Hill,
S. Johnson,
A. C. Frangeskou,
P. L. Diggle,
M. J. Strain,
E. Gu,
M. E. Newton,
J. M. Smith,
P. S. Salter,
G. W. Morley
Abstract:
Three-dimensional arrays of silicon transistors increase the density of bits. Solid-state qubits are much larger so could benefit even more from using the third dimension given that useful fault-tolerant quantum computing will require at least 100,000 physical qubits and perhaps one billion. Here we use laser writing to create 3D arrays of nitrogen-vacancy centre (NVC) qubits in diamond. This woul…
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Three-dimensional arrays of silicon transistors increase the density of bits. Solid-state qubits are much larger so could benefit even more from using the third dimension given that useful fault-tolerant quantum computing will require at least 100,000 physical qubits and perhaps one billion. Here we use laser writing to create 3D arrays of nitrogen-vacancy centre (NVC) qubits in diamond. This would allow 5 million qubits inside a commercially available 4.5x4.5x0.5 mm diamond based on five nuclear qubits per NVC and allowing $(10 μm)^3$ per NVC to leave room for our laser-written electrical control. The spin coherence times we measure are an order of magnitude longer than previous laser-written qubits and at least as long as non-laser-written NVC. As well as NVC quantum computing, quantum communication and nanoscale sensing could benefit from the same platform. Our approach could also be extended to other qubits in diamond and silicon carbide.
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Submitted 10 July, 2018;
originally announced July 2018.
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Magnetic field dependence of antiferromagnetic resonance in NiO
Authors:
Zhe Wang,
S. Kovalev,
N. Awari,
Min Chen,
S. Germanskiy,
B. Green,
J. -C. Deinert,
T. Kampfrath,
J. Milano,
M. Gensch
Abstract:
We report on measurements of magnetic field and temperature dependence of antiferromagnetic resonances in the prototypical antiferromagnet NiO. The frequencies of the magnetic resonances in the vicinity of 1 THz have been determined in the time-domain via time-resolved Faraday measurements after selective excitation by narrow-band superradiant terahertz (THz) pulses at temperatures down to 3K and…
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We report on measurements of magnetic field and temperature dependence of antiferromagnetic resonances in the prototypical antiferromagnet NiO. The frequencies of the magnetic resonances in the vicinity of 1 THz have been determined in the time-domain via time-resolved Faraday measurements after selective excitation by narrow-band superradiant terahertz (THz) pulses at temperatures down to 3K and in magnetic fields up to 10 T. The measurements reveal two antiferromagnetic resonance modes, which can be distinguished by their characteristic magnetic field dependencies. The nature of the two modes is discussed by comparison to an eight-sublattice antiferromagnetic model, which includes superexchange between the next-nearest-neighbor Ni spins, magnetic dipolar interactions, cubic magneto-crystalline anisotropy, and Zeeman interaction with the external magnetic field. Our study indicates that a two-sublattice model is insufficient for the description of spin dynamics in NiO, while the magnetic-dipolar interactions and magneto-crystalline anisotropy play important roles.
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Submitted 20 June, 2018;
originally announced June 2018.
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Electronic structure of the neutral silicon-vacancy center in diamond
Authors:
B. L. Green,
M. W. Doherty,
E. Nako,
N. B. Manson,
U. F. S. D'Haenens-Johansson,
S. D. Williams,
D. J. Twitchen,
M. E. Newton
Abstract:
The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin lifetimes (T2 ~ 1 ms at 4 K) and up to 90% of optical emission into its 946 nm zero-phonon line. However, the electronic structure of SiV0 is poorly understood, making further exploitation difficult. Performing photolumine…
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The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin lifetimes (T2 ~ 1 ms at 4 K) and up to 90% of optical emission into its 946 nm zero-phonon line. However, the electronic structure of SiV0 is poorly understood, making further exploitation difficult. Performing photoluminescence spectroscopy of SiV0 under uniaxial stress, we find the previous excited electronic structure of a single 3A1u state is incorrect, and identify instead a coupled 3Eu - 3A2u system, the lower state of which has forbidden optical emission at zero stress and so efficiently decreases the total emission of the defect: we propose a solution employing finite strain to form the basis of a spin-photon interface. Isotopic enrichment definitively assigns the 976 nm transition associated with the defect to a local mode of the silicon atom.
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Submitted 24 April, 2018;
originally announced April 2018.
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Imaging Quasi-Periodic Electronic States in a Synthetic Penrose Tiling
Authors:
Laura C. Collins,
Thomas G. Witte,
Rochelle Silverman,
David B. Green,
Kenjiro K. Gomes
Abstract:
Quasicrystals possess long-range order but lack the translational symmetry of crystalline solids. In solid state physics, periodicity is one of the fundamental properties that prescribes the electronic band structure in crystals. In the absence of periodicity and the presence of quasicrystalline order, the ways that electronic states change remain a mystery. Scanning tunneling microscopy and atomi…
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Quasicrystals possess long-range order but lack the translational symmetry of crystalline solids. In solid state physics, periodicity is one of the fundamental properties that prescribes the electronic band structure in crystals. In the absence of periodicity and the presence of quasicrystalline order, the ways that electronic states change remain a mystery. Scanning tunneling microscopy and atomic manipulation can be used to assemble a two-dimensional quasicrystalline structure mapped upon the Penrose tiling. Here, carbon monoxide molecules are arranged on the surface of Cu(111) one at a time to form the potential landscape that mimics the ionic potential of atoms in natural materials by constraining the electrons in the two-dimensional surface state of Cu(111). The real-space images reveal the presence of the quasiperiodic order in the electronic wave functions and the Fourier analysis of our results links the energy of the resonant states to the local vertex structure of the quasicrystal.
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Submitted 20 July, 2017;
originally announced July 2017.
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The neutral silicon-vacancy center in diamond: spin polarization and lifetimes
Authors:
B. L. Green,
S. Mottishaw,
B. G. Breeze,
A. M. Edmonds,
U. F. S. D'Haenens-Johansson,
M. W. Doherty,
S. D. Williams,
D. J. Twitchen,
M. E. Newton
Abstract:
We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($\mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~\mathrm{μs}$ at low-temperature, and a spin…
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We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($\mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~\mathrm{μs}$ at low-temperature, and a spin relaxation limit of $T_1>25~\mathrm{s}$. Optical spin state initialization around 946 nm allows independent initialization of $\mathrm{SiV^{0}}$ and $\mathrm{NV^{-}}$ within the same optically-addressed volume, and $\mathrm{SiV^{0}}$ emits within the telecoms downconversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that $\mathrm{SiV^{0}}$ is a promising candidate for a long-range quantum communication technology.
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Submitted 29 May, 2017;
originally announced May 2017.
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Optical properties of Xe color centers in diamond
Authors:
Russell Sandstrom,
Li Ke,
Aiden Martin,
Ziyu Wang,
Mehran Kianinia,
Ben Green,
Weibo Gao,
Igor Aharonovich
Abstract:
Optical properties of color centers in diamond have been the subject of intense research due to their promising applications in quantum photonics. In this work we study the optical properties of Xe related color centers implanted into nitrogen rich (type IIA) and an ultrapure, electronic grade diamond. The Xe defect has two zero phonon lines at ~ 794 and 811 nm, which can be effectively excited us…
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Optical properties of color centers in diamond have been the subject of intense research due to their promising applications in quantum photonics. In this work we study the optical properties of Xe related color centers implanted into nitrogen rich (type IIA) and an ultrapure, electronic grade diamond. The Xe defect has two zero phonon lines at ~ 794 and 811 nm, which can be effectively excited using both green and red excitation, however, its emission in the nitrogen rich diamond is brighter. Near resonant excitation is performed at cryogenic temperatures and luminescence is probed under strong magnetic field. Our results are important towards the understanding of the Xe related defect and other near infrared color centers in diamond.
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Submitted 30 March, 2017;
originally announced April 2017.
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Electron paramagnetic resonance and photochromism of $\mathrm{N}_{3}\mathrm{V}^{0}$ in diamond
Authors:
B. L. Green,
B. G. Breeze,
M. E. Newton
Abstract:
The defect in diamond formed by a vacancy surrounded by three nearest-neighbor nitrogen atoms and one carbon atom, $\mathrm{N}_{3}\mathrm{V}$, is found in $\approx98\%$ of natural diamonds. Despite $\mathrm{N}_{3}\mathrm{V}^{0}$ being the earliest electron paramagnetic resonance spectrum observed in diamond, to date no satisfactory simulation of the spectrum for an arbitrary magnetic field directi…
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The defect in diamond formed by a vacancy surrounded by three nearest-neighbor nitrogen atoms and one carbon atom, $\mathrm{N}_{3}\mathrm{V}$, is found in $\approx98\%$ of natural diamonds. Despite $\mathrm{N}_{3}\mathrm{V}^{0}$ being the earliest electron paramagnetic resonance spectrum observed in diamond, to date no satisfactory simulation of the spectrum for an arbitrary magnetic field direction has been produced due to its complexity. In this work, $\mathrm{N}_{3}\mathrm{V}^{0}$ is identified in $^{15}\mathrm{N}$-doped synthetic diamond following irradiation and annealing. The $\mathrm{^{15}N}_{3}\mathrm{V}^{0}$ spin Hamiltonian parameters are revised and used to refine the parameters for $\mathrm{^{14}N}_{3}\mathrm{V}^{0}$, enabling the latter to be accurately simulated and fitted for an arbitrary magnetic field direction. Study of $\mathrm{^{15}N}_{3}\mathrm{V}^{0}$ under excitation with green light indicates charge transfer between $\mathrm{N}_{3}\mathrm{V}$ and $\mathrm{N_s}$. It is argued that this charge transfer is facilitated by direct ionization of $\mathrm{N}_{3}\mathrm{V}^{-}$, an as-yet unobserved charge state of $\mathrm{N}_{3}\mathrm{V}$.
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Submitted 9 February, 2017;
originally announced February 2017.
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All-optical hyperpolarization of electron and nuclear spins in diamond
Authors:
Ben L. Green,
Ben G. Breeze,
Gregory J. Rees,
John V. Hanna,
Jyh-Pin Chou,
Viktor Ivády,
Adam Gali,
Mark E. Newton
Abstract:
Low thermal polarization of nuclear spins is a primary sensitivity limitation for nuclear magnetic resonance. Here we demonstrate optically pumped (microwave-free) nuclear spin polarization of $^{13}\mathrm{C}$ and $^{15}\mathrm{N}$ in $^{15}\mathrm{N}$-doped diamond. $^{15}\mathrm{N}$ polarization enhancements up to $-2000$ above thermal equilibrium are observed in the paramagnetic system…
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Low thermal polarization of nuclear spins is a primary sensitivity limitation for nuclear magnetic resonance. Here we demonstrate optically pumped (microwave-free) nuclear spin polarization of $^{13}\mathrm{C}$ and $^{15}\mathrm{N}$ in $^{15}\mathrm{N}$-doped diamond. $^{15}\mathrm{N}$ polarization enhancements up to $-2000$ above thermal equilibrium are observed in the paramagnetic system $\mathrm{N_s}^{0}$. Nuclear spin polarization is shown to diffuse to bulk $^{13}\mathrm{C}$ with NMR enhancements of $-200$ at room temperature and $-500$ at $\mathrm{240~K}$, enabling a route to microwave-free high-sensitivity NMR study of biological samples in ambient conditions.
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Submitted 13 February, 2017; v1 submitted 12 October, 2016;
originally announced October 2016.
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Optical nanoscopy of transient states in condensed matter
Authors:
Frederik Kuschewski,
Susanne C. Kehr,
Bert Green,
Christian Bauer,
Michael Gensch,
Lukas M. Eng
Abstract:
Recently, the fundamental and nanoscale understanding of complex phenomena in materials research and the life sciences, witnessed considerable progress. However, elucidating the underlying mechanisms, governed by entangled degrees of freedom such as lattice, spin, orbit, and charge for solids or conformation, electric potentials, and ligands for proteins, has remained challenging. Techniques that…
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Recently, the fundamental and nanoscale understanding of complex phenomena in materials research and the life sciences, witnessed considerable progress. However, elucidating the underlying mechanisms, governed by entangled degrees of freedom such as lattice, spin, orbit, and charge for solids or conformation, electric potentials, and ligands for proteins, has remained challenging. Techniques that allow for distinguishing between different contributions to these processes are hence urgently required. In this paper we demonstrate the application of scattering-type scanning near-field optical microscopy (s-SNOM) as a novel type of nano-probe for tracking transient states of matter. We introduce a sideband-demodulation technique that allows for probing exclusively the stimuli-induced change of near-field optical properties. We exemplify this development by inspecting the decay of an electron-hole plasma generated in SiGe thin films through near-infrared laser pulses. Our approach can universally be applied to optically track ultrafast/-slow processes over the whole spectral range from UV to THz frequencies.
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Submitted 3 August, 2015;
originally announced August 2015.
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Electron paramagnetic resonance of the $\mathrm{N_{2}V^{-}}$ defect in $\mathrm{^{15}N}$-doped synthetic diamond
Authors:
Ben L. Green,
Matthew W. Dale,
Mark E. Newton,
David Fisher
Abstract:
Nitrogen is the dominant impurity in the majority of natural and synthetic diamonds, and the family of nitrogen vacancy-type ($\mathrm{N_{n}V}$) defects are crucial in our understanding of defect dynamics in these diamonds. A significant gap is the lack of positive identification of $\mathrm{N_{2}V}^{-}$, the dominant charge state of $\mathrm{N_{2}V}$, in diamond that contains a significant concen…
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Nitrogen is the dominant impurity in the majority of natural and synthetic diamonds, and the family of nitrogen vacancy-type ($\mathrm{N_{n}V}$) defects are crucial in our understanding of defect dynamics in these diamonds. A significant gap is the lack of positive identification of $\mathrm{N_{2}V}^{-}$, the dominant charge state of $\mathrm{N_{2}V}$, in diamond that contains a significant concentration of electron donors. In this paper we employ isotopically-enriched diamond to identify the EPR spectrum associated with $^{15}\mathrm{N_{2}V}^{-}$ and use the derived spin Hamiltonian parameters to identify $^{14}\mathrm{N_{2}V}^{-}$ in a natural isotopic abundance sample. The electronic wavefunction of the $\mathrm{N_{2}V^{-}}$ ground state and previous lack of identification is discussed. The $\mathrm{N_{2}V}^{-}$ EPR spectrum intensity is shown to correlate with H2 optical absorption over an order of magnitude in concentration.
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Submitted 14 October, 2015; v1 submitted 24 July, 2015;
originally announced July 2015.
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THz Field Control of In-Plane Orbital Order in La0.5Sr1.5MnO4
Authors:
Timothy A. Miller,
Ravindra W. Chhajlany,
Luca Tagliacozzo,
Bertram Green,
Sergey Kovalev,
Dharmalingam Prabhakaran,
Maciej Lewenstein,
Michael Gensch,
Simon Wall
Abstract:
In-plane anisotropic ground states are ubiquitous in correlated solids such as pnictides, cuprates and manganites. They can arise from doping Mott insulators and compete with phases such as superconductivity, however their origins are debated. Strong coupling between lattice, charge, orbital and spin degrees of freedom results in simultaneous ordering of multiple parameters, masking the mechanism…
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In-plane anisotropic ground states are ubiquitous in correlated solids such as pnictides, cuprates and manganites. They can arise from doping Mott insulators and compete with phases such as superconductivity, however their origins are debated. Strong coupling between lattice, charge, orbital and spin degrees of freedom results in simultaneous ordering of multiple parameters, masking the mechanism that drives the transition. We demonstrate that the anisotropic orbital domains in a manganite can be oriented by the polarization of a pulsed THz light field. Through the application of the Hubbard model, we show that domain control can be achieved either through field assisted hopping of charges or a field-induced modification of bond angles. Both routes enhance the local Coulomb repulsions which drive domain reorientation and the dominant mechanism is dictated by the equilibrium Mn-O-Mn bond angle. Our results highlight the key role played by the Coulomb interaction in driving orbital order in manganites and demonstrate how THz can be utilized in new ways to understand and manipulate anisotropic phases in a broad range of correlated materials.
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Submitted 23 September, 2015; v1 submitted 4 June, 2015;
originally announced June 2015.
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Scanning Quantum Dot Microscopy
Authors:
Christian Wagner,
Matthew F. B. Green,
Phillipp Leinen,
Thorsten Deilmann,
Peter Krüger,
Michael Rohlfing,
Ruslan Temirov,
F. Stefan Tautz
Abstract:
Interactions between atomic and molecular objects are to a large extent defined by the nanoscale electrostatic potentials which these objects produce. We introduce a scanning probe technique that enables three-dimensional imaging of local electrostatic potential fields with sub-nanometer resolution. Registering single electron charging events of a molecular quantum dot attached to the tip of a (qP…
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Interactions between atomic and molecular objects are to a large extent defined by the nanoscale electrostatic potentials which these objects produce. We introduce a scanning probe technique that enables three-dimensional imaging of local electrostatic potential fields with sub-nanometer resolution. Registering single electron charging events of a molecular quantum dot attached to the tip of a (qPlus tuning fork) atomic force microscope operated at 5 K, we quantitatively measure the quadrupole field of a single molecule and the dipole field of a single metal adatom, both adsorbed on a clean metal surface. Because of its high sensitivity, the technique can record electrostatic potentials at large distances from their sources, which above all will help to image complex samples with increased surface roughness.
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Submitted 26 March, 2015;
originally announced March 2015.
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Predictive pion-quark BCS relation and Thornber-Feynman high-Tc gap
Authors:
M. D. Scadron,
B. A. Green
Abstract:
A pion-quark pairing temperature is defined by a BCS-like relation identified from a quark-level Goldberger-Treiman relation with a Nambu scalar mass "gap parameter" taken in the low-mass limit. This intuitive relation predicts the associated "experimental" lattice-gauge pairing temperature. The opposite high-mass limit predicts the sigma mass, and notably has a predictive analog in high-Tc supe…
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A pion-quark pairing temperature is defined by a BCS-like relation identified from a quark-level Goldberger-Treiman relation with a Nambu scalar mass "gap parameter" taken in the low-mass limit. This intuitive relation predicts the associated "experimental" lattice-gauge pairing temperature. The opposite high-mass limit predicts the sigma mass, and notably has a predictive analog in high-Tc superconductivity in the stable nondispersive energy gap as defined by Thornber-Feynman polaron dynamics.
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Submitted 8 November, 2007;
originally announced November 2007.
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High-Tc via electron polar coupling: relation to low-Tc superconductivity and to chiral symmetry in particle physics
Authors:
B. A. Green,
M. D. Scadron
Abstract:
Directional coupling of Thornber-Feynman polarization with the high-Tc ARPES distribution specifies the optimum flatband pseudogap Δand mobile localized quasiparticle. This coupling peaks by tuning the statistics and interaction energy to produce stable short-ranged directional pairing that reflects the lattice asymmetry. Analogous energy gap and BCS ratio parameters are identified for low-Tc lo…
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Directional coupling of Thornber-Feynman polarization with the high-Tc ARPES distribution specifies the optimum flatband pseudogap Δand mobile localized quasiparticle. This coupling peaks by tuning the statistics and interaction energy to produce stable short-ranged directional pairing that reflects the lattice asymmetry. Analogous energy gap and BCS ratio parameters are identified for low-Tc long-range acoustical phonons and for quark-anti-quark tightly bound chiral pions in particle physics.
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Submitted 23 April, 2001;
originally announced April 2001.
