Silicon-doped $β$-Ga$_2$O$_3$ films grown at 1 $μ$m/h by suboxide molecular-beam epitaxy
Authors:
Kathy Azizie,
Felix V. E. Hensling,
Cameron A. Gorsak,
Yunjo Kim,
Daniel M. Dryden,
M. K. Indika Senevirathna,
Selena Coye,
Shun-Li Shang,
Jacob Steele,
Patrick Vogt,
Nicholas A. Parker,
Yorick A. Birkhölzer,
Jonathan P. McCandless,
Debdeep Jena,
Huili G. Xing,
Zi-Kui Liu,
Michael D. Williams,
Andrew J. Green,
Kelson Chabak,
Adam T. Neal,
Shin Mou,
Michael O. Thompson,
Hari P. Nair,
Darrell G. Schlom
Abstract:
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiti…
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We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of $β$-Ga$_2$O$_3$ by conventional MBE. As a result, a growth rate of ~1 $μ$m/h is readily achieved at a relatively low growth temperature (T$_{sub}$ = 525 $^\circ$C), resulting in films with high structural perfection and smooth surfaces (rms roughness of < 2 nm on ~1 $μ$m thick films). Silicon-containing oxide sources (SiO and SiO$_2$) producing an SiO suboxide molecular beam are used to dope the $β$-Ga$_2$O$_3$ layers. Temperature-dependent Hall effect measurements on a 1 $μ$m thick film with a mobile carrier concentration of 2.7x10$^{17}$ cm$^{-3}$ reveal a room-temperature mobility of 124 cm$^2$ V$^{-1}$ s$^{-1}$ that increases to 627 cm$^2$ V$^{-1}$ s$^{-1}$ at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working MESFETs made from these silicon-doped $β$-Ga$_2$O$_3$ films grown by S-MBE at growth rates of ~1 $μ$m/h.
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Submitted 22 December, 2022;
originally announced December 2022.
Surface Oxidation of the Topological Insulator Bi2Se3
Authors:
Avery J. Green,
Sonal Dey,
Yong Q. An,
Brendan O'Brien,
Samuel J. O'Mullane,
Bradley Thiel,
Alain C. Diebold
Abstract:
A comprehensive picture of the aging and oxidation of the (0001) surface of Bi2Se3 is critical to understanding the physical origin of changes in its topologically protected surface states. We find that surface aging in ambient conditions occurs in two major steps. Within two hours of exfoliation, a series of ~ 3.6 A high islands are observed by atomic force microscopy over approximate 10% of the…
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A comprehensive picture of the aging and oxidation of the (0001) surface of Bi2Se3 is critical to understanding the physical origin of changes in its topologically protected surface states. We find that surface aging in ambient conditions occurs in two major steps. Within two hours of exfoliation, a series of ~ 3.6 A high islands are observed by atomic force microscopy over approximate 10% of the surface. Subsequently, patch growth stops, and oxidation begins after the two hours and continues until one quintuple layer has been oxidized. X-ray photoelectron spectroscopy shows no sign of oxidation before ~ 120 minutes of exposure to air, and the oxygen 1s peak is clearly present after ~ 190 minutes of ambient exposure. Variable angle spectroscopic ellipsometry also indicates that the oxidation of a full quintuple layer occurs on the time scale of days. These results are in good agreement with the time dependent changes previously observed in the surface crystal structure by second harmonic generation. In addition to providing the ability to non-destructively measure oxide on the surface of Bi2Se3 crystals, ellipsometry can be used to identify the thickness of Bi2Se3 flakes. These results are consistent with non-linear optical methods including rotational anisotropy second harmonic generation, which follow the time dependence of the changes to the top quintuple layer.
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Submitted 15 January, 2016;
originally announced January 2016.
