Showing 1–7 of 7 results for author: Grbic, B

Hysteretic magnetotransport in p-type AlGaAs heterostructures with In/Zn/Au ohmic contacts

Authors: B. Grbic, R. Leturcq, T. Ihn, K. Ensslin, G. Blatter, D. Reuter, A. D. Wieck

Abstract: The two-terminal magneto-conductance of a hole gas in C-doped AlGaAs/GaAs heterostructures with ohmic contacts consisting of alloyed In/Zn/Au displays a pronounced hysteresis of the conductance around zero magnetic field. The hysteresis disappears above magnetic fields of around 0.5 T and temperatures above 300 mK. For magnetic fields below 10 mT we observe a pronounced dip in the magneto-conduc… ▽ More The two-terminal magneto-conductance of a hole gas in C-doped AlGaAs/GaAs heterostructures with ohmic contacts consisting of alloyed In/Zn/Au displays a pronounced hysteresis of the conductance around zero magnetic field. The hysteresis disappears above magnetic fields of around 0.5 T and temperatures above 300 mK. For magnetic fields below 10 mT we observe a pronounced dip in the magneto-conductance. We tentatively discuss these experimental observations in the light of superconductivity of the ohmic contacts. △ Less

Submitted 5 November, 2007; originally announced November 2007.

Comments: 4+ pages, 3 figures;

Journal ref: Phys. Rev. B 77, 245307 (2008)

Strong spin-orbit interactions and weak antilocalization in carbon doped p-type GaAs heterostructures

Authors: Boris Grbic, Renaud Leturcq, Thomas Ihn, Klaus Ensslin, Dirk Reuter, Andreas D. Wieck

Abstract: We present a comprehensive study of the low-field magnetoresistance in carbon doped p-type GaAs/AlGaAs heterostructures aiming at the investigation of spin-orbit interaction effects. The following signatures of exceptionally strong spin-orbit interactions are simultaneously observed: a beating in the Shubnikov-de Haas oscillations, a classical positive magnetoresistance due to the presence of th… ▽ More We present a comprehensive study of the low-field magnetoresistance in carbon doped p-type GaAs/AlGaAs heterostructures aiming at the investigation of spin-orbit interaction effects. The following signatures of exceptionally strong spin-orbit interactions are simultaneously observed: a beating in the Shubnikov-de Haas oscillations, a classical positive magnetoresistance due to the presence of the two spin-split subbands, and a weak anti-localization dip in the magnetoresistance. The spin-orbit induced splitting of the heavy hole subband at the Fermi level is determined to be around 30% of the total Fermi energy. The phase coherence length of holes of around 2.5 $μ$m at a temperature of 70 mK, extracted from weak anti-localization measurements, is promissing for the fabrication of phase-coherent p-type nanodevices. △ Less

Submitted 5 November, 2007; originally announced November 2007.

Comments: 8 pages, 6 figures;

Journal ref: Phys. Rev. B 77, 125312 (2008)

Aharonov-Bohm oscillations in p-type GaAs quantum rings

Authors: Boris Grbic, Renaud Leturcq, Thomas Ihn, Klaus Ensslin, Dirk Reuter, Andreas D. Wieck

Abstract: We have explored phase coherent transport of holes in two p-type GaAs quantum rings with orbital radii 420 nm and 160 nm fabricated with AFM oxidation lithography. Highly visible Aharonov-Bohm (AB) oscillations are measured in both rings, with an amplitude of the oscillations exceeding 10% of the total resistance in the case of the ring with a radius of 160 nm. Beside the h/e oscillations, we re… ▽ More We have explored phase coherent transport of holes in two p-type GaAs quantum rings with orbital radii 420 nm and 160 nm fabricated with AFM oxidation lithography. Highly visible Aharonov-Bohm (AB) oscillations are measured in both rings, with an amplitude of the oscillations exceeding 10% of the total resistance in the case of the ring with a radius of 160 nm. Beside the h/e oscillations, we resolve the contributions from higher harmonics of the AB oscillations. The observation of a local resistance minimum at B=0 T in both rings is a signature of the destructive interference of the holes' spins. We show that this minimum is related to the minimum in the h/2e oscillations. △ Less

Submitted 3 November, 2007; originally announced November 2007.

Comments: Proceedings of EP2DS-17, Genova 2007; Accepted for Physica E; 3 pages, 3 figures

Journal ref: Physica E 40, 1273 (2008)

Hole transport in p-type GaAs quantum dots and point contacts

Authors: B. Grbic, R. Leturcq, T. Ihn, K. Ensslin, D. Reuter, A. D. Wieck

Abstract: Strong spin-orbit interaction characteristic for p-type GaAs systems, makes such systems promising for the realization of spintronic devices. Here we report on transport measurements in nanostructures fabricated on p-type, C-doped GaAs heterostructures by scanning probe oxidation lithography. We observe conductance quantization in a quantum point contact, as well as pronounced Coulomb resonances… ▽ More Strong spin-orbit interaction characteristic for p-type GaAs systems, makes such systems promising for the realization of spintronic devices. Here we report on transport measurements in nanostructures fabricated on p-type, C-doped GaAs heterostructures by scanning probe oxidation lithography. We observe conductance quantization in a quantum point contact, as well as pronounced Coulomb resonances in two quantum dots with different geometries. Charging energies for both dots, extracted from Coulomb diamond measurements are in agreement with the lithographic dimensions of the dots. The absence of excited states in Coulomb diamond measurements indicates that the dots are in the multi-level transport regime. △ Less

Submitted 3 November, 2007; originally announced November 2007.

Comments: Proceedings of ICPS-28, Vienna 2006; 2 pages, 2 figures

Journal ref: AIP Conf. Proc. 893, 777 (2007)

Aharonov-Bohm oscillations in the presence of strong spin-orbit interactions

Authors: Boris Grbic, Renaud Leturcq, Thomas Ihn, Klaus Ensslin, Dirk Reuter, Andreas D. Wieck

Abstract: We have measured highly visible Aharonov-Bohm (AB) oscillations in a ring structure defined by local anodic oxidation on a p-type GaAs heterostructure with strong spin-orbit interactions. Clear beating patterns observed in the raw data can be interpreted in terms of a spin geometric phase. Besides h/e oscillations, we resolve the contributions from the second harmonic of AB oscillations and also… ▽ More We have measured highly visible Aharonov-Bohm (AB) oscillations in a ring structure defined by local anodic oxidation on a p-type GaAs heterostructure with strong spin-orbit interactions. Clear beating patterns observed in the raw data can be interpreted in terms of a spin geometric phase. Besides h/e oscillations, we resolve the contributions from the second harmonic of AB oscillations and also find a beating in these h/2e oscillations. A resistance minimum at B=0T, present in all gate configurations, is the signature of destructive interference of the spins propagating along time-reversed paths. △ Less

Submitted 30 October, 2007; v1 submitted 10 April, 2007; originally announced April 2007.

Comments: 4 pages, 3 figures, published version

Journal ref: Phys. Rev. Lett. 99, 176803 (2007)

Single-hole transistor in p-type GaAs/AlGaAs heterostructures

Authors: Boris Grbic, Renaud Leturcq, Klaus Ensslin, Dirk Reuter, Andreas D. Wieck

Abstract: A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb diamond measurements, in agreement with the lithographic dimensions of the dot. The absence of excited states in Coulomb diamond measurements, as well as the… ▽ More A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb diamond measurements, in agreement with the lithographic dimensions of the dot. The absence of excited states in Coulomb diamond measurements, as well as the temperature dependence of Coulomb peak heights indicate that the dot is in the multi-level transport regime. Fluctuations in peak spacings larger than the estimated mean single-particle level spacing are observed. △ Less

Submitted 21 October, 2005; v1 submitted 21 October, 2005; originally announced October 2005.

Comments: 4 pages, 5 figures

Journal ref: Appl. Phys. Lett. 87, 232108 (2005)

Magnetotransport in C-doped AlGaAs heterostructures

Authors: B. Grbic, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, A. D. Wieck

Abstract: High-quality C-doped p-type AlGaAs heterostructures with mobilities exceeding 150 000 cm$^2$/Vs are investigated by low-temperature magnetotransport experiments. We find features of the fractional quantum Hall effect as well as a highly resolved Shubnikov-de Haas oscillations at low magnetic fields. This allows us to determine the densities, effective masses and mobilities of the holes populatin… ▽ More High-quality C-doped p-type AlGaAs heterostructures with mobilities exceeding 150 000 cm$^2$/Vs are investigated by low-temperature magnetotransport experiments. We find features of the fractional quantum Hall effect as well as a highly resolved Shubnikov-de Haas oscillations at low magnetic fields. This allows us to determine the densities, effective masses and mobilities of the holes populating the spin-split subbands arising from the lack of inversion symmetry in these structures. △ Less

Submitted 10 October, 2004; v1 submitted 18 June, 2004; originally announced June 2004.

Comments: 3 pages, 4 figures

Journal ref: Appl. Phys. Lett. 85, 2277 (2004)