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Enhanced Electromechanical Properties of Solution-Processed K$_{0.5}$Na$_{0.5}$NbO$_{3}$ Thin Films
Authors:
Nagamalleswara Rao Alluri,
Longfei Song,
Stephanie Girod,
Barnik Mandal,
Juliette Cardoletti,
Vid Bobnar,
Torsten Granzow,
Veronika Kovacova,
Adrian-Marie Philippe,
Emmanuel Defay,
Sebastjan Glinsek
Abstract:
K$_{0.5}$Na$_{0.5}$NbO$_{3}$ is among the most promising lead-free piezoelectrics. While its sputtered films match the performance of the champion piezoelectric Pb(Zr,Ti)O$_{3}$, processing of high-quality, reproducible, and time-stable solution-processed K$_{0.5}$Na$_{0.5}$NbO$_{3}$ films remains challenging. Here, we report 1 $μ$m-thick Mn-doped K$_{0.5}$Na$_{0.5}$NbO$_{3}$ films prepared throug…
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K$_{0.5}$Na$_{0.5}$NbO$_{3}$ is among the most promising lead-free piezoelectrics. While its sputtered films match the performance of the champion piezoelectric Pb(Zr,Ti)O$_{3}$, processing of high-quality, reproducible, and time-stable solution-processed K$_{0.5}$Na$_{0.5}$NbO$_{3}$ films remains challenging. Here, we report 1 $μ$m-thick Mn-doped K$_{0.5}$Na$_{0.5}$NbO$_{3}$ films prepared through a chemical solution deposition process, which have perfectly dense microstructure and uniform composition across their thickness. The films exhibit a high transverse piezoelectric coefficient (e$_{31,f}$ = -14.8 C/m$^{2}$), high dielectric permittivity ($ε_{r}$ = 920), low dielectric losses (tan$δ$ = 0.05) and can withstand electric fields up to at least 1 MV/cm. The functional properties show excellent stability over time, and the synthesis process is reproducible. The results demonstrate the high potential of Mn-doped K$_{0.5}$Na$_{0.5}$NbO$_{3}$ films to become a replacement for lead-based Pb(Zr,Ti)O$_{3}$ films in piezoelectric applications.
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Submitted 28 February, 2025;
originally announced February 2025.
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Stable antiferroelectric phase in calcium-doped lead scandium tantalate
Authors:
Youri Nouchokgwe,
Natalya S. Fedorova,
Pranab Biswas,
Veronika Kovacova,
Ivana Gorican,
Silvo Drmovsek,
Binayak Mukherjee,
Uros Prah,
Guillaume F. Nataf,
Torsten Granzow,
Mael Guennou,
Hana Ursic,
Jorge Iniguez-Gonzalez,
Emmanuel Defay
Abstract:
Antiferroelectrics are valuable dielectric materials, offering promise for both high energy storage and solid-state caloric cooling applications. However, few antiferroelectrics are known or available. Therefore, it is crucial to discover or design materials showing antiferroelectric behaviour. In this study, we fabricated highly ordered lead scandium tantalate ceramics doped with calcium. From ca…
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Antiferroelectrics are valuable dielectric materials, offering promise for both high energy storage and solid-state caloric cooling applications. However, few antiferroelectrics are known or available. Therefore, it is crucial to discover or design materials showing antiferroelectric behaviour. In this study, we fabricated highly ordered lead scandium tantalate ceramics doped with calcium. From calorimetry and polarization-electric field loops, we demonstrate the effect of calcium on the thermal properties and phase transition sequences of lead scandium tantalate. We identify an antiferroelectric phase appearing at temperatures intermediate between the ferroelectric and paraelectric phases, which becomes increasingly stable as the calcium concentration increases. These findings are supported by density functional theory calculations and Raman spectroscopy. Finally, we propose a phase diagram for calcium-doped lead scandium tantalate. Our results highlight the potential of stabilizing antiferroelectricity in ferroelectric perovskite materials through A-site doping.
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Submitted 4 February, 2025;
originally announced February 2025.
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Ferroelectric HfO$_2$-ZrO$_2$ multilayers with reduced wake-up
Authors:
Barnik Mandal,
Adrian-Marie Philippe,
Nathalie Valle,
Emmanuel Defay,
Torsten Granzow,
Sebastjan Glinsek
Abstract:
Since the discovery of ferroelectricity in HfO$_2$ thin films, significant research has focused on Zr-doped HfO$_2$ and solid solution (Hf,Zr)O$_2$ thin films. Functional properties can be further tuned via multilayering, however, this approach has not yet been fully explored in HfO$_2$-ZrO$_2$ films. This work demonstrates ferroelectricity in a 50 nm thick, solution-processed HfO$_2$-ZrO$_2$ mult…
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Since the discovery of ferroelectricity in HfO$_2$ thin films, significant research has focused on Zr-doped HfO$_2$ and solid solution (Hf,Zr)O$_2$ thin films. Functional properties can be further tuned via multilayering, however, this approach has not yet been fully explored in HfO$_2$-ZrO$_2$ films. This work demonstrates ferroelectricity in a 50 nm thick, solution-processed HfO$_2$-ZrO$_2$ multilayer film, marking it as the thickest multilayer film to date exhibiting ferroelectric properties. The multilayer structure was confirmed through transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy, with high-resolution TEM revealing grain continuity across multiple layers. This finding indicates that a polar phase in the originally paraelectric ZrO$_2$ layer, can be stabilized by the HfO$_2$ layer. The film attains a remanent polarization of 9 uC/cm$^2$ and exhibits accelerated wake-up behavior, attributed to its higher breakdown strength resulting from the incorporation of multiple interfaces. These results offer a faster wake-up mechanism for thick ferroelectric hafnia films.
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Submitted 29 March, 2025; v1 submitted 13 November, 2024;
originally announced November 2024.
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Giant Strain Tunability in Polycrystalline Ceramic Films via Helium Implantation
Authors:
A. Blàzquez Martínez,
S. Glinšek,
T. Granzow,
J. -N. Audinot,
P. Fertey,
J. Kreisel,
M. Guennou,
C. Toulouse
Abstract:
Strain engineering is a powerful tool routinely used to control and enhance properties such as ferroelectricity, magnetic ordering, or metal-insulator transitions. Epitaxial strain in thin films allows manipulation of in-plane lattice parameters, achieving strain values generally up to 4%, and above in some specific cases. In polycrystalline films, which are more suitable for functional applicatio…
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Strain engineering is a powerful tool routinely used to control and enhance properties such as ferroelectricity, magnetic ordering, or metal-insulator transitions. Epitaxial strain in thin films allows manipulation of in-plane lattice parameters, achieving strain values generally up to 4%, and above in some specific cases. In polycrystalline films, which are more suitable for functional applications due to their lower fabrication costs, strains above 1% often cause cracking. This poses challenges for functional property tuning by strain engineering. Helium implantation has been shown to induce negative pressure through interstitial implantation, which increases the unit cell volume and allows for continuous strain tuning with the implanted dose in epitaxial monocrystalline films. However, there have been no studies on the transferability of helium implantation as a strain-engineering technique to polycrystalline films. Here, we demonstrate the technique's applicability for strain engineering beyond epitaxial monocrystalline samples. Helium implantation can trigger an unprecedented lattice parameter expansion of up to 3.2% in polycrystalline BiFeO3 films without causing structural cracks. The film maintains stable ferroelectric properties with doses up to 1E15 He/cm2. This finding underscores the potential of helium implantation in strain engineering polycrystalline materials, enabling cost-effective and versatile applications.
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Submitted 23 January, 2025; v1 submitted 20 September, 2024;
originally announced September 2024.
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Birefringence induced by antiferroelectric switching in transparent polycrystalline $PbZr_{0.95}Ti_{0.05}O_{3}$ film
Authors:
Pranab Parimal Biswas,
Cosme Milesi-Brault,
Alfredo Blázquez Martínez,
Naveen Aruchamy,
Longfei Song,
Veronika Kovacova,
Sebastjan Glinsek,
Torsten Granzow,
Emmanuel Defay,
Mael Guennou
Abstract:
The most characteristic functional property of antiferroelectric materials is the possibility to induce a phase transition from a non-polar to a polar phase by an electric field. Here, we investigate the effect of this field-induced phase transition on the birefringence change of $PbZr_{0.95}Ti_{0.05}O_{3}$. We use a transparent polycrystalline $PbZr_{0.95}Ti_{0.05}O_{3}$ film grown on…
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The most characteristic functional property of antiferroelectric materials is the possibility to induce a phase transition from a non-polar to a polar phase by an electric field. Here, we investigate the effect of this field-induced phase transition on the birefringence change of $PbZr_{0.95}Ti_{0.05}O_{3}$. We use a transparent polycrystalline $PbZr_{0.95}Ti_{0.05}O_{3}$ film grown on $PbTiO_{3}/HfO_{2}/SiO_{2}$ with interdigitated electrodes to directly investigate changes in birefringence in a simple transmission geometry. In spite of the polycrystalline nature of the film and its moderate thickness, the field-induced transition produces a sizeable effect observable under a polarized microscope. The film in its polar phase is found to behave like a homogeneous birefringent medium. The time evolution of this field-induced birefringence provides information about irreversibilities in the antiferroelectric switching process and its slow dynamics. The change in birefringence has two main contributions, one that responds briskly (~ 0.5 s), and a slower one that rises and saturates over a period of as long as 30 minutes. Possible origins for this long saturation and relaxation times are discussed.
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Submitted 3 August, 2022;
originally announced August 2022.
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Influence of charged walls and defects on DC resistivity and dielectric relaxation in Cu-Cl boracite
Authors:
C. Cochard,
T. Granzow,
C. M. Fernandez-Posada,
M. A. Carpenter,
R. G. P. McQuaid,
J. M. Guy,
R. W. Whatmore,
J. M. Gregg
Abstract:
Charged domain walls form spontaneously in Cu-Cl boracite on cooling through the phase transition. These walls exhibit changed conductivity compared to the bulk and motion consistent with the existence of negative capacitance. Here, we present the dielectric permittivity and DC resistivity of bulk Cu-Cl boracite as a function of temperature (-140 °C to 150 °C) and frequency (1 mHz to 10 MHz). The…
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Charged domain walls form spontaneously in Cu-Cl boracite on cooling through the phase transition. These walls exhibit changed conductivity compared to the bulk and motion consistent with the existence of negative capacitance. Here, we present the dielectric permittivity and DC resistivity of bulk Cu-Cl boracite as a function of temperature (-140 °C to 150 °C) and frequency (1 mHz to 10 MHz). The thermal behaviour of the two observed dielectric relaxations and the DC resistivity is discussed. We propose that the relaxations can be explained by the existence of point defects, most likely local complexes created by a change of valence of Cu and accompanying oxygen vacancies. In addition, the sudden change in resistivity seen at the phase transition suggests that conductive domain walls contribute significantly to the conductivity in the ferroelectric phase.
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Submitted 19 November, 2021; v1 submitted 19 August, 2021;
originally announced August 2021.
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Aging of poled ferroelectric ceramics due to relaxation of random depolarization fields by space-charge accumulation near grain boundaries
Authors:
Yu. A. Genenko,
J. Glaum,
O. Hirsch,
H. Kungl,
M. J. Hoffmann,
T. Granzow
Abstract:
Migration of charged point defects triggered by the local random depolarization field is shown to plausibly explain aging of poled ferroelectric ceramics providing reasonable time and acceptor concentration dependences of the emerging internal bias field. The theory is based on the evaluation of the energy of the local depolarization field caused by mismatch of the polarizations of neighbor grai…
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Migration of charged point defects triggered by the local random depolarization field is shown to plausibly explain aging of poled ferroelectric ceramics providing reasonable time and acceptor concentration dependences of the emerging internal bias field. The theory is based on the evaluation of the energy of the local depolarization field caused by mismatch of the polarizations of neighbor grains. The kinetics of charge migration assumes presence of mobile oxygen vacancies in the material due to the intentional or unintentional acceptor doping. Satisfactory agreement of the theory with experiment on the Fe-doped lead zirconate titanate is demonstrated.
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Submitted 17 December, 2009;
originally announced December 2009.
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Phaseseparation in overdoped Y_{1-0.8}Ca_{0-0.2}Ba_2Cu_3O_{6.96-6.98}
Authors:
J. Röhler,
C. Friedrich,
T. Granzow,
E. Kaldis,
G. Böttger
Abstract:
The dimpling in the CuO_2 planes of overdoped Y_{1-y}Ca_yBa_2Cu_3 O_{6.96-6.98} (y=0.02-0.2) has been measured by x-ray absorption-fine- structure spectroscopy (Y-K EXAFS). A step-like decrease around 12% Ca indicates a percolation threshold for distorted sites of 5 cells, and thus phase segregation. We conclude the charge carriers added by substitution of Y{3+} by Ca{2+} to be trapped at the Ca…
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The dimpling in the CuO_2 planes of overdoped Y_{1-y}Ca_yBa_2Cu_3 O_{6.96-6.98} (y=0.02-0.2) has been measured by x-ray absorption-fine- structure spectroscopy (Y-K EXAFS). A step-like decrease around 12% Ca indicates a percolation threshold for distorted sites of 5 cells, and thus phase segregation. We conclude the charge carriers added by substitution of Y{3+} by Ca{2+} to be trapped at the Ca sites and their nn environment.
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Submitted 2 February, 1999;
originally announced February 1999.
