Showing 1–46 of 46 results for author: Graham, S

Endoscopic fiber-coupled diamond magnetometer for cancer surgery

Authors: A. J. Newman, S. M. Graham, C. J. Stephen, A. M. Edmonds, M. L. Markham, G. W. Morley

Abstract: Interoperative measurements using magnetic sensors is a valuable technique in cancer surgery for finding magnetic tracers. Here we present a fiber-coupled nitrogen-vacancy (N-V) center magnetometer capable of detecting iron oxide suspension (MagTrace from Endomagnetics Ltd.) used in breast cancer surgeries. Detection of an iron mass as low as 0.56~mg has been demonstrated, 100 times less than that… ▽ More Interoperative measurements using magnetic sensors is a valuable technique in cancer surgery for finding magnetic tracers. Here we present a fiber-coupled nitrogen-vacancy (N-V) center magnetometer capable of detecting iron oxide suspension (MagTrace from Endomagnetics Ltd.) used in breast cancer surgeries. Detection of an iron mass as low as 0.56~mg has been demonstrated, 100 times less than that of a recommended dose at a maximum distance of 5.8~mm. Detection of an iron concentration as low as 2.8 mg/ml has also been demonstrated, 20 times less than a recommended dose. The maximum working distance from the sensor can be as large as 14.6~mm for higher concentrations. The sensor head has a maximum diameter of 10~mm which would allow it to be used for endoscopy, laparoscopy and interoperative surgery. △ Less

Submitted 8 April, 2025; originally announced April 2025.

Comments: 9 pages, 15 figures

Journal ref: Physical Review Applied 24, 024029 (2025)

Understanding phonon selection and interference in momentum-resolved electron energy loss spectroscopy

Authors: Thomas W. Pfeifer, Harrison A. Walker, Henry T. Aller, Samuel Graham, Sokrates Pantelides, Jordan A. Hachtel, Patrick E. Hopkins, Eric R. Hoglund

Abstract: As momentum-resolved Electron Energy Loss Spectroscopy (q-EELS) becomes more widely used for phonon measurements, better understanding of the intricacies of the acquired signal is necessary. Selection rules limit the allowed scattering, which may prohibit the appearance of specific phonon branches for certain measurements. Simultaneous sampling of the lattice across all basis indices also warrants… ▽ More As momentum-resolved Electron Energy Loss Spectroscopy (q-EELS) becomes more widely used for phonon measurements, better understanding of the intricacies of the acquired signal is necessary. Selection rules limit the allowed scattering, which may prohibit the appearance of specific phonon branches for certain measurements. Simultaneous sampling of the lattice across all basis indices also warrants a coherent treatment of phonons, which yields a larger repeating unit in reciprocal space. We thus introduce the concept of the ``interferometric Brillouin zone'', which is closely related to the Dynamic Structure Factor. Both effects determine where phonon modes may be observed. Through a rigorous understanding of both, we introduce a new efficient method of simulation of scattering experiments via Spectral Energy Density (SED) and/or Lattice Dynamics (LD) calculations. Finally, we demonstrate the use of scattering selection rules on well-studied systems and explore the acquisition of a polarization-selective vibrational density of states. △ Less

Submitted 27 July, 2025; v1 submitted 12 March, 2025; originally announced March 2025.

Comments: 8 pages, 3 figures, supplemental material included

Unveiling the 5$f$ electron hybridization process in UPd$_2$Al$_3$ via ARPES and Time-resolved PES

Authors: Jiao-Jiao Song, Qi-Yi Wu, Chen Zhang, Steve M. Gilbertson, Peter S. Riseborough, Jan Rusz, John J. Joyce, Kevin S. Graham, Clifford G. Olson, Paul H. Tobash, Eric D. Bauer, Bo Chen, Hao Liu, Yu-Xia Duan, Peter M. Oppeneer, George Rodriguez, Tomasz Durakiewicz, Jian-Qiao Meng

Abstract: This study investigates the 5$f$-electron-conduction electron hybridization process in the heavy fermion superconductor UPd$_2$Al$_3$ using a combination of angle-resolved photoemission spectroscopy (ARPES) and time-resolved photoemission spectroscopy (tr-PES). ARPES measurements reveal the formation of a hybridization gap at a temperature of approximately 75 K, which becomes more pronounced as th… ▽ More This study investigates the 5$f$-electron-conduction electron hybridization process in the heavy fermion superconductor UPd$_2$Al$_3$ using a combination of angle-resolved photoemission spectroscopy (ARPES) and time-resolved photoemission spectroscopy (tr-PES). ARPES measurements reveal the formation of a hybridization gap at a temperature of approximately 75 K, which becomes more pronounced as the temperature decreases. Notably, the persistence of a flat U 5$f$ band at temperatures well above the hybridization onset challenges conventional understanding. Our findings demonstrate a non-monotonic temperature dependence of the quasiparticle relaxation time, with an anomalous decrease at 20 K, suggesting complex electronic and magnetic interactions. These findings provide detailed insights into the 5$f$-electron hybridization process in UPd$_2$Al$_3$, with significant implications for the understanding of heavy fermion superconductivity and the role of 5$f$-electron hybridization in uranium-based materials. △ Less

Submitted 12 September, 2024; originally announced September 2024.

Comments: 5 pages, 4 figures

Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

Authors: Henry T. Aller, Thomas W. Pfeifer, Abdullah Mamun, Kenny Huynh, Marko Tadjer, Tatyana Feygelson, Karl Hobart, Travis Anderson, Bradford Pate, Alan Jacobs, James Spencer Lundh, Mark Goorsky, Asif Khan, Patrick Hopkins, Samuel Graham

Abstract: This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a disordered interface with a high thermal boundary resistance (TBR) of 20.6 m^2-K/GW. We employed sputtered carbide interlayers (e.g., $B_4C$, $SiC$, $B_4C/SiC$) t… ▽ More This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a disordered interface with a high thermal boundary resistance (TBR) of 20.6 m^2-K/GW. We employed sputtered carbide interlayers (e.g., $B_4C$, $SiC$, $B_4C/SiC$) to reduce thermal boundary resistance in diamond/AlGaN interfaces. The carbide interlayers resulted in record-low thermal boundary resistance values of 3.4 and 3.7 m^2-K/GW for Al$_{0.65}$Ga$_{0.35}$N samples with $B_4C$ and $SiC$ interlayers, respectively. STEM imaging of the interface reveals interlayer thicknesses between 1.7-2.5 nm, with an amorphous structure. Additionally, Fast-Fourier Transform (FFT) characterization of sections of the STEM images displayed sharp crystalline fringes in the AlGaN layer, confirming it was properly protected from damage from hydrogen plasma during the diamond growth. In order to accurately measure the thermal boundary resistance we develop a hybrid technique, combining time-domain thermoreflectance and steady-state thermoreflectance fitting, offering superior sensitivity to buried thermal resistances. Our findings underscore the efficacy of interlayer engineering in enhancing thermal transport and demonstrate the importance of innovative measurement techniques in accurately characterizing complex thermal interfaces. This study provides a foundation for future research in improving thermal properties of semiconductor devices through interface engineering and advanced measurement methodologies. △ Less

Submitted 15 August, 2024; originally announced August 2024.

On the Road with a Diamond Magnetometer

Authors: S. M. Graham, A. J. Newman, C. J. Stephen, A. M. Edmonds, D. J. Twitchen, M. L. Markham, G. W. Morley

Abstract: Nitrogen vacancy centres in diamond can be used for vector magnetometry. In this work we present a portable vector diamond magnetometer. Its vector capability, combined with feedback control and robust structure enables operation on moving platforms. While placed on a trolley, magnetic mapping of a room is demonstrated and the magnetometer is also shown to be operational in a moving van with the m… ▽ More Nitrogen vacancy centres in diamond can be used for vector magnetometry. In this work we present a portable vector diamond magnetometer. Its vector capability, combined with feedback control and robust structure enables operation on moving platforms. While placed on a trolley, magnetic mapping of a room is demonstrated and the magnetometer is also shown to be operational in a moving van with the measured magnetic field shifts for the x, y, and z axes being tagged with GPS coordinates. These magnetic field measurements are in agreement with measurements taken simultaneously with a fluxgate magnetometer. △ Less

Submitted 31 January, 2024; v1 submitted 29 January, 2024; originally announced January 2024.

Comments: 25 pages, 32 figures

Journal ref: Diamond and Related Materials 152, 111945 (2025)

Relocalization of Uranium 5f Electrons in Antiferromagnetic Heavy Fermion Superconductor UPd$_2$Al$_3$: Insights from Angle-Resolved Photoemission Spectroscopy

Authors: Jiao-Jiao Song, Chen Zhang, Qi-Yi Wu, Yin-Zou Zhao, Jan Rusz, John. J. Joyce, Kevin. S. Graham, Peter Riseborough, Clifford G. Olson, Hao Liu, Bo Chen, Ya-Hua Yuan, Yu-Xia Duan, Paul H. Tobash, Eric D. Bauer, Peter M. Oppeneer, Tomasz Durakiewicz, Jian-Qiao Meng

Abstract: We investigate the antiferromagnetic heavy fermion superconductor UPd$_2$Al$_3$, employing angle-resolved photoemission spectroscopy to unravel the complex electronic structure of its U 5f electrons. We observe unexpected characteristics that challenge the conventional temperature-dependent behavior of heavy fermion systems, revealing unexpected characteristics. At temperatures above the anticipat… ▽ More We investigate the antiferromagnetic heavy fermion superconductor UPd$_2$Al$_3$, employing angle-resolved photoemission spectroscopy to unravel the complex electronic structure of its U 5f electrons. We observe unexpected characteristics that challenge the conventional temperature-dependent behavior of heavy fermion systems, revealing unexpected characteristics. At temperatures above the anticipated coherence temperature (T$^*$), we observe itinerant U 5f electrons at temperatures higher than previously postulated. Additionally, a previously unidentified dispersionless band emerges around 600 meV below the Fermi energy, potentially linked to spin-orbit splitting within the U 5f states. Hybridization between the 5f electrons and conduction band was observed with an energy dispersion of 10 meV at low temperatures, suggesting that U 5f electrons near and at the Fermi surface have an itinerant nature. Temperature-dependent 5d-5f resonance spectra reveal that the 5f electron spectrum weight increases with lowering temperature and begins to decrease at temperatures significantly higher than the Neel temperature (T$_N$). We further show that the competition between the Kondo effect and Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions may be responsible for the relocalization of 5f electrons, making relocalization a precursor to the establishment of magnetic order at lower temperatures. Our experiments also provide evidence that 5f electrons with the same orbital are involved in both the Kondo effect and RKKY interactions, suggesting that the two coexist at lower temperatures. △ Less

Submitted 15 May, 2024; v1 submitted 8 January, 2024; originally announced January 2024.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 109, 205114 (2024)

Tensor gradiometry with a diamond magnetometer

Authors: A. J. Newman, S. M. Graham, A. M. Edmonds, D. J. Twitchen, M. L. Markham, G. W. Morley

Abstract: Vector magnetometry provides more information than scalar measurements for magnetic surveys utilized in space, defense, medical, geological and industrial applications. These areas would benefit from a mobile vector magnetometer that can operate in extreme conditions. Here we present a scanning fiber-coupled nitrogen vacancy (NV) center vector magnetometer. Feedback control of the microwave excita… ▽ More Vector magnetometry provides more information than scalar measurements for magnetic surveys utilized in space, defense, medical, geological and industrial applications. These areas would benefit from a mobile vector magnetometer that can operate in extreme conditions. Here we present a scanning fiber-coupled nitrogen vacancy (NV) center vector magnetometer. Feedback control of the microwave excitation frequency is employed to improve dynamic range and maintain sensitivity during movement of the sensor head. Tracking of the excitation frequency shifts for all four orientations of the NV center allow us to image the vector magnetic field of a damaged steel plate. We calculate the magnetic tensor gradiometry images in real time, and they allow us to detect smaller damage than is possible with vector or scalar imaging. △ Less

Submitted 11 July, 2023; originally announced July 2023.

Comments: 6 pages, 5 figures

Journal ref: Physical Review Applied 21, 014003 (2024)

Fiber-coupled Diamond Magnetometry with an Unshielded 30 pT/$\sqrt{\textrm{Hz}}$ Sensitivity

Authors: S. M. Graham, A. T. M. A. Rahman, L. Munn, R. L. Patel, A. J. Newman, C. J. Stephen, G. Colston, A. Nikitin, A. M. Edmonds, D. J. Twitchen, M. L. Markham, G. W. Morley

Abstract: Ensembles of nitrogen vacancy centres (NVCs) in diamond can be employed for sensitive magnetometry. In this work we present a fiber-coupled NVC magnetometer with an unshielded sensitivity of (30 $\pm$ 10) pT/$\sqrt{\textrm{Hz}}$ in a (10 - 500)-Hz frequency range. This sensitivity is enabled by a relatively high green-to-red photon conversion efficiency, the use of a [100] bias field alignment, mi… ▽ More Ensembles of nitrogen vacancy centres (NVCs) in diamond can be employed for sensitive magnetometry. In this work we present a fiber-coupled NVC magnetometer with an unshielded sensitivity of (30 $\pm$ 10) pT/$\sqrt{\textrm{Hz}}$ in a (10 - 500)-Hz frequency range. This sensitivity is enabled by a relatively high green-to-red photon conversion efficiency, the use of a [100] bias field alignment, microwave and lock-in amplifier (LIA) parameter optimisation, as well as a balanced hyperfine excitation scheme. Furthermore, a silicon carbide (SiC) heat spreader is used for microwave delivery, alongside low-strain $^{12}\textrm{C}$ diamonds, one of which is placed in a second magnetically insensitive fluorescence collecting sensor head for common-mode noise cancellation. The magnetometer is capable of detecting signals from sources such as a vacuum pump up to 2 m away, with some orientation dependence but no complete dead zones, demonstrating its potential for use in remote sensing applications. △ Less

Submitted 23 March, 2023; v1 submitted 16 November, 2022; originally announced November 2022.

Comments: 21 pages, 19 figures, correction to data analysis

Journal ref: Physical Review Applied 19, 044042 (2023)

High Thermal Conductivity in Wafer Scale Cubic Silicon Carbide Crystals

Authors: Zhe Cheng, Jianbo Liang, Keisuke Kawamura, Hidetoshi Asamura, Hiroki Uratani, Samuel Graham, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, David G. Cahill

Abstract: High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as either active functional materials or thermal management materials. We report an isotropic high thermal conductivity over 500 W m-1K-1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals… ▽ More High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as either active functional materials or thermal management materials. We report an isotropic high thermal conductivity over 500 W m-1K-1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals (only surpassed by diamond). Furthermore, the corresponding 3C-SiC thin films are found to have record-high in-plane and cross-plane thermal conductivity, even higher than diamond thin films with equivalent thicknesses. Our results resolve a long-lasting puzzle that the literature values of thermal conductivity for 3C-SiC are perplexingly lower than the structurally more complex 6H-SiC. Further analysis reveals that the observed high thermal conductivity in this work arises from the high purity and high crystal quality of 3C-SiC crystals which excludes the exceptionally strong defect-phonon scatterings in 3C-SiC. Moreover, by integrating 3C-SiC with other semiconductors by epitaxial growth, we show that the measured 3C-SiC-Si TBC is among the highest for semiconductor interfaces. These findings not only provide insights for fundamental phonon transport mechanisms, also suggest that 3C-SiC may constitute an excellent wide-bandgap semiconductor for applications of power electronics as either active components or substrates. △ Less

Submitted 11 July, 2022; originally announced July 2022.

Measurements and Numerical Calculations of Thermal Conductivity to Evaluate the Quality of β-Gallium Oxide Thin Films Grown on Sapphire and Silicon Carbide by Molecular Beam Epitaxy

Authors: Diego Vaca, Matthew Barry, Luke Yates, Neeraj Nepal, D. Scott Katzer, Brian P. Downey, Virginia Wheeler, Luke Nyakiti, David J. Meyer, Samuel Graham, Satish Kumar

Abstract: We report a method to obtain insights into lower thermal conductivity of β-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical predictions to decipher the effect of boundary scattering and defects in thin-films. We used time domain thermoreflectance (TDTR) to perform the experiments, density function… ▽ More We report a method to obtain insights into lower thermal conductivity of β-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical predictions to decipher the effect of boundary scattering and defects in thin-films. We used time domain thermoreflectance (TDTR) to perform the experiments, density functional theory and the Boltzmann transport equation for thermal conductivity calculations, and the diffuse mismatch model for TBC predictions. The experimental thermal conductivities were approximately 3 times smaller than those calculated for perfect Ga2O3 crystals of similar size. When considering the presence of grain boundaries, gallium and oxygen vacancies, and stacking faults in the calculations, the crystals that present around 1% of gallium vacancies and a density of stacking faults of 106 faults/cm were the ones whose thermal conductivities were closer to the experimental results. Our analysis suggests the level of different types of defects present in the Ga2O3 crystal that could be used to improve the quality of MBE-grown samples by reducing these defects and thereby produce materials with higher thermal conductivities. △ Less

Submitted 4 May, 2022; originally announced May 2022.

Comments: 11 pages. Includes supplementary Information. The following article has been submitted to Applied Physics Letters. After it is published, it will be found at https://publishing.aip.org/resources/librarians/products/journals/

Experimental Observation of Localized Interfacial Phonon Modes

Authors: Zhe Cheng, Ruiyang Li, Xingxu Yan, Glenn Jernigan, Jingjing Shi, Michael E. Liao, Nicholas J. Hines, Chaitanya A. Gadre, Juan Carlos Idrobo, Eungkyu Lee, Karl D. Hobart, Mark S. Goorsky, Xiaoqing Pan, Tengfei Luo, Samuel Graham

Abstract: Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic interfacial details, which are found critical to correctly describing thermal boundary conductance (TBC). Recent theoretical studies predicted the exist… ▽ More Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic interfacial details, which are found critical to correctly describing thermal boundary conductance (TBC). Recent theoretical studies predicted the existence of localized phonon modes at the interface which can play an important role in understanding interfacial thermal transport. However, experimental validation is still lacking. Through a combination of Raman spectroscopy and high-energy resolution electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope, we report the first experimental observation of localized interfacial phonon modes at ~12 THz at a high-quality epitaxial Si-Ge interface. These modes are further confirmed using molecular dynamics simulations with a high-fidelity neural network interatomic potential, which also yield TBC agreeing well with that measured from time-domain thermoreflectance (TDTR) experiments. Simulations find that the interfacial phonon modes have obvious contribution to the total TBC. Our findings may significantly contribute to the understanding of interfacial thermal transport physics and have impact on engineering TBC at interfaces in applications such as electronics thermal management and thermoelectric energy conversion. △ Less

Submitted 29 May, 2021; originally announced May 2021.

Journal ref: Nature Communications, 12, 6901, 2021

Pattern Formation in Quantum Ferrofluids: from Supersolids to Superglasses

Authors: J. Hertkorn, J. -N. Schmidt, M. Guo, F. Böttcher, K. S. H. Ng, S. D. Graham, P. Uerlings, T. Langen, M. Zwierlein, T. Pfau

Abstract: Pattern formation is a ubiquitous phenomenon observed in nonlinear and out-of-equilibrium systems. In equilibrium, quantum ferrofluids formed from ultracold atoms were recently shown to spontaneously develop coherent density patterns, manifesting a supersolid. We theoretically investigate the phase diagram of such quantum ferrofluids in oblate trap geometries and find an even wider range of exotic… ▽ More Pattern formation is a ubiquitous phenomenon observed in nonlinear and out-of-equilibrium systems. In equilibrium, quantum ferrofluids formed from ultracold atoms were recently shown to spontaneously develop coherent density patterns, manifesting a supersolid. We theoretically investigate the phase diagram of such quantum ferrofluids in oblate trap geometries and find an even wider range of exotic states of matter. Two-dimensional supersolid crystals formed from individual ferrofluid quantum droplets dominate the phase diagram at low densities. For higher densities we find honeycomb and labyrinthine states, as well as a pumpkin phase. We discuss scaling relations which allow us to find these phases for a wide variety of trap geometries, interaction strengths, and atom numbers. Our study illuminates the origin of the various possible patterns of quantum ferrofluids and shows that their occurrence is generic of strongly dipolar interacting systems stabilized by beyond mean-field effects. △ Less

Submitted 25 March, 2021; originally announced March 2021.

Comments: 16 pages, 5+2 figures

Journal ref: Phys. Rev. Research 3, 033125 (2021)

Supersolidity in Two-Dimensional Trapped Dipolar Droplet Arrays

Authors: J. Hertkorn, J. -N. Schmidt, M. Guo, F. Böttcher, K. S. H. Ng, S. D. Graham, P. Uerlings, H. P. Büchler, T. Langen, M. Zwierlein, T. Pfau

Abstract: We theoretically investigate the ground states and the spectrum of elementary excitations across the superfluid to droplet crystallization transition of an oblate dipolar Bose-Einstein condensate. We systematically identify regimes where spontaneous rotational symmetry breaking leads to the emergence of a supersolid phase with characteristic collective excitations, such as the Higgs amplitude mode… ▽ More We theoretically investigate the ground states and the spectrum of elementary excitations across the superfluid to droplet crystallization transition of an oblate dipolar Bose-Einstein condensate. We systematically identify regimes where spontaneous rotational symmetry breaking leads to the emergence of a supersolid phase with characteristic collective excitations, such as the Higgs amplitude mode. Furthermore, we study the dynamics across the transition and show how these supersolids can be realized with standard protocols in state-of-the-art experiments. △ Less

Submitted 17 March, 2021; originally announced March 2021.

Comments: 10 pages, 2+1 figures

Journal ref: Phys. Rev. Lett. 127, 155301 (2021)

Thermal Visualization of Buried Interfaces by Transient and Steady-State Responses of Time-Domain Thermoreflectance

Authors: Zhe Cheng, Fengwen Mu, Xiaoyang Ji, Tiangui You, Wenhui Xu, Tadatomo Suga, Xin Ou, David G. Cahill, Samuel Graham

Abstract: Thermal resistances from interfaces impede heat dissipation in micro/nanoscale electronics, especially for high-power electronics. Despite the growing importance of understanding interfacial thermal transport, advanced thermal characterization techniques which can visualize thermal conductance across buried interfaces, especially for nonmetal-nonmetal interfaces, are still under development. This… ▽ More Thermal resistances from interfaces impede heat dissipation in micro/nanoscale electronics, especially for high-power electronics. Despite the growing importance of understanding interfacial thermal transport, advanced thermal characterization techniques which can visualize thermal conductance across buried interfaces, especially for nonmetal-nonmetal interfaces, are still under development. This work reports a dual-modulation-frequency TDTR mapping technique to visualize the thermal conduction across buried semiconductor interfaces for beta-Ga2O3-SiC samples. Both the beta-Ga2O3 thermal conductivity and the buried beta-Ga2O3-SiC thermal boundary conductance (TBC) are visualized for an area of 200 um x 200 um. Areas with low TBC values ( smaller than 20 MW/m2-K) are successfully identified on the TBC map, which correspond to weakly bonded interfaces caused by high-temperature annealing. The steady-state temperature rise (detector voltage), usually ignored in TDTR measurements, is found to be able to probe TBC variations of the buried interfaces without the limit of thermal penetration depth. This technique can be applied to detect defects/voids in deeply buried heterogeneous interfaces non-destructively, and also opens a door for the visualization of thermal conductance in nanoscale nonhomogeneous structures. △ Less

Submitted 14 March, 2021; originally announced March 2021.

Phonon heat conduction in Al1-xScxN thin films

Authors: Chao Yuan, Mingyo Park, Yue Zheng, Jingjing Shi, Rytis Dargis, Samuel Graham, Azadeh Ansari

Abstract: Aluminum scandium nitride alloy (Al1-xScxN) is regarded as a promising material for high-performance acoustic devices used in wireless communication systems. Phonon scattering and heat conduction processes govern the energy dissipation in acoustic resonators, ultimately determining their performance quality. This work reports, for the first time, on phonon scattering processes and thermal conducti… ▽ More Aluminum scandium nitride alloy (Al1-xScxN) is regarded as a promising material for high-performance acoustic devices used in wireless communication systems. Phonon scattering and heat conduction processes govern the energy dissipation in acoustic resonators, ultimately determining their performance quality. This work reports, for the first time, on phonon scattering processes and thermal conductivity in Al1-xScxN alloys with the Sc content (x) up to 0.26. The thermal conductivity measured presents a descending trend with increasing x. Temperature-dependent measurements show an increase in thermal conductivity as the temperature increases at temperatures below 200K, followed by a plateau at higher temperatures (T> 200K). Application of a virtual crystal phonon conduction model allows us to elucidate the effects of boundary and alloy scattering on the observed thermal conductivity behaviors. We further demonstrate that the alloy scattering is caused mainly by strain-field difference, and less by the atomic mass difference between ScN and AlN, which is in contrast to the well-studied Al1-xGaxN and SixGe1-x alloy systems where atomic mass difference dominates the alloy scattering. This work studies and provides the quantitative knowledge for phonon scattering and the thermal conductivity in Al1-xScxN, paving the way for future investigation of materials and design of acoustic devices. △ Less

Submitted 24 February, 2021; originally announced February 2021.

Quasi-Ballistic Thermal Conduction in 6H-SiC

Authors: Zhe Cheng, Weifang Lu, Jingjing Shi, Daiki Tanaka, Nakib H. Protik, Shangkun Wang, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Samuel Graham

Abstract: The minimization of electronics makes heat dissipation of related devices an increasing challenge. When the size of materials is smaller than the phonon mean free paths, phonons transport without internal scatterings and laws of diffusive thermal conduction fail, resulting in significant reduction in the effective thermal conductivity. This work reports, for the first time, the temperature depende… ▽ More The minimization of electronics makes heat dissipation of related devices an increasing challenge. When the size of materials is smaller than the phonon mean free paths, phonons transport without internal scatterings and laws of diffusive thermal conduction fail, resulting in significant reduction in the effective thermal conductivity. This work reports, for the first time, the temperature dependent thermal conductivity of doped epitaxial 6H-SiC and monocrystalline porous 6H-SiC below room temperature probed by time-domain thermoreflectance. Strong quasi-ballistic thermal transport was observed in these samples, especially at low temperatures. Doping and structural boundaries were applied to tune the quasi-ballistic thermal transport since dopants selectively scatter high-frequency phonons while boundaries scatter phonons with long mean free paths. Exceptionally strong phonon scattering by boron dopants are observed, compared to nitrogen dopants. Furthermore, orders of magnitude reduction in the measured thermal conductivity was observed at low temperatures for the porous 6H-SiC compared to the epitaxial 6H-SiC. Finally, first principles calculations and a simple Callaway model are built to understand the measured thermal conductivities. Our work sheds light on the fundamental understanding of thermal conduction in technologically-important wide bandgap semiconductors such as 6H-SiC and will impact applications such as thermal management of 6H-SiC-related electronics and devices. △ Less

Submitted 15 February, 2021; originally announced February 2021.

Journal ref: Materials Today Physics, 20, 100462, 2021

Roton Excitations in an Oblate Dipolar Quantum Gas

Authors: Jan-Niklas Schmidt, Jens Hertkorn, Mingyang Guo, Fabian Böttcher, Matthias Schmidt, Kevin S. H. Ng, Sean D. Graham, Tim Langen, Martin Zwierlein, Tilman Pfau

Abstract: We observe signatures of radial and angular roton excitations around a droplet crystallization transition in dipolar Bose-Einstein condensates. In situ measurements are used to characterize the density fluctuations near this transition. The static structure factor is extracted and used to identify the radial and angular roton excitations by their characteristic symmetries. These fluctuations peak… ▽ More We observe signatures of radial and angular roton excitations around a droplet crystallization transition in dipolar Bose-Einstein condensates. In situ measurements are used to characterize the density fluctuations near this transition. The static structure factor is extracted and used to identify the radial and angular roton excitations by their characteristic symmetries. These fluctuations peak as a function of interaction strength indicating the crystallization transition of the system. We compare our observations to a theoretically calculated excitation spectrum allowing us to connect the crystallization mechanism with the softening of the angular roton modes. △ Less

Submitted 2 February, 2021; originally announced February 2021.

Comments: 10 pages, 4 + 4 figures

Journal ref: Phys. Rev. Lett. 126, 193002 (2021)

Thermal Resistance at a Twist Boundary and Semicoherent Heterointerface

Authors: Ramya Gurunathan, Riley Hanus, Samuel Graham, Anupam Garg, G. Jeffrey Snyder

Abstract: Traditional models of interfacial phonon scattering, including the acoustic mismatch model (AMM) and diffuse mismatch model (DMM), take into account the bulk properties of the material surrounding the interface, but not the atomic structure and properties of the interface itself. Here, we derive a theoretical formalism for the phonon scattering at a dislocation grid, or two interpenetrating orthog… ▽ More Traditional models of interfacial phonon scattering, including the acoustic mismatch model (AMM) and diffuse mismatch model (DMM), take into account the bulk properties of the material surrounding the interface, but not the atomic structure and properties of the interface itself. Here, we derive a theoretical formalism for the phonon scattering at a dislocation grid, or two interpenetrating orthogonal arrays of dislocations, as this is the most stable structure of both the symmetric twist boundary and semicoherent heterointerface. With this approach, we are able to separately examine the contribution to thermal resistance due to the step function change in acoustic properties and due to interfacial dislocation strain fields, which induces diffractive scattering. Both low-angle Si-Si twist boundaries and the Si-Ge heterointerfaces are considered here and compared to previous experimental and simulation results. This work indicates that scattering from misfit dislocation strain fields doubles the thermal boundary resistance of Si-Ge heterointerfaces compared to scattering due to acoustic mismatch alone. Scattering from grain boundary dislocation strain fields is predicted to dominate the thermal boundary resistance of Si-Si twist boundaries. This physical treatment can guide the thermal design of devices by quantifying the relative importance of interfacial strain fields, which can be engineered via fabrication and processing methods, versus acoustic mismatch, which is fixed for a given interface. Additionally, this approach captures experimental and simulation trends such as the dependence of thermal boundary resistance on the grain boundary angle and interfacial strain energy. △ Less

Submitted 13 April, 2021; v1 submitted 4 January, 2021; originally announced January 2021.

Comments: 11 figures

Journal ref: Phys. Rev. B 103, 144302 (2021)

Understanding Phonon Transport Properties Using Classical Molecular Dynamics Simulations

Authors: Murali Gopal Muraleedharan, Kiarash Gordiz, Andrew Rohskopf, Spencer Thomas Wyant, Zhe Cheng, Samuel Graham, Asegun Henry

Abstract: Predictive modeling of the phonon/thermal transport properties of materials is vital to rational design for a diverse spectrum of engineering applications. Classical Molecular Dynamics (MD) simulations serve as a tool to simulate the time evolution of the atomic level system dynamics and enable calculation of thermal transport properties for a wide range of materials, from perfect periodic crystal… ▽ More Predictive modeling of the phonon/thermal transport properties of materials is vital to rational design for a diverse spectrum of engineering applications. Classical Molecular Dynamics (MD) simulations serve as a tool to simulate the time evolution of the atomic level system dynamics and enable calculation of thermal transport properties for a wide range of materials, from perfect periodic crystals to systems with strong structural and compositional disorder, as well as their interfaces. Although MD does not intrinsically rely on a plane wave-like phonon description, when coupled with lattice dynamics calculations, it can give insights to the vibrational mode level contributions to thermal transport, which includes plane-wave like modes as well as others, rendering the approach versatile and powerful. On the other hand, several deficiencies including the lack of vibrationally accurate interatomic potentials and the inability to rigorously include the quantum nature of phonons prohibit the widespread applicability and reliability of Molecular Dynamics simulations. This article provides a comprehensive review of classical Molecular Dynamics based formalisms for extracting thermal transport properties: thermal conductivity and thermal interfacial conductance and the effects of various structural, compositional, and chemical parameters on these properties. Here, we highlight unusual property predictions, and emphasize on the needs and strategies for developing accurate interatomic potentials and rigorous quantum correction schemes. △ Less

Submitted 2 November, 2020; originally announced November 2020.

Comments: 148 pages, 15 figures, 1 table

Density Fluctuations across the Superfluid-Supersolid Phase Transition in a Dipolar Quantum Gas

Authors: J. Hertkorn, J. -N. Schmidt, F. Böttcher, M. Guo, M. Schmidt, K. S. H. Ng, S. D. Graham, H. P. Büchler, T. Langen, M. Zwierlein, T. Pfau

Abstract: Phase transitions share the universal feature of enhanced fluctuations near the transition point. Here we show that density fluctuations reveal how a Bose-Einstein condensate of dipolar atoms spontaneously breaks its translation symmetry and enters the supersolid state of matter -- a phase that combines superfluidity with crystalline order. We report on the first direct in situ measurement of dens… ▽ More Phase transitions share the universal feature of enhanced fluctuations near the transition point. Here we show that density fluctuations reveal how a Bose-Einstein condensate of dipolar atoms spontaneously breaks its translation symmetry and enters the supersolid state of matter -- a phase that combines superfluidity with crystalline order. We report on the first direct in situ measurement of density fluctuations across the superfluid-supersolid phase transition. This allows us to introduce a general and straightforward way to extract the static structure factor, estimate the spectrum of elementary excitations and image the dominant fluctuation patterns. We observe a strong response in the static structure factor and infer a distinct roton minimum in the dispersion relation. Furthermore, we show that the characteristic fluctuations correspond to elementary excitations such as the roton modes, which have been theoretically predicted to be dominant at the quantum critical point, and that the supersolid state supports both superfluid as well as crystal phonons. △ Less

Submitted 18 September, 2020; originally announced September 2020.

Comments: 11 pages, 5 + 3 figures

Journal ref: Phys. Rev. X 11, 011037 (2021)

New states of matter with fine-tuned interactions: quantum droplets and dipolar supersolids

Authors: Fabian Böttcher, Jan-Niklas Schmidt, Jens Hertkorn, Kevin S. H. Ng, Sean D. Graham, Mingyang Guo, Tim Langen, Tilman Pfau

Abstract: Quantum fluctuations can stabilize Bose-Einstein condensates (BEC) against the mean-field collapse. Stabilization of the condensate has been observed in quantum degenerate Bose-Bose mixtures and dipolar BECs. The fine-tuning of the interatomic interactions can lead to the emergence of two new states of matter: liquid-like selfbound quantum droplets and supersolid crystals formed from these droplet… ▽ More Quantum fluctuations can stabilize Bose-Einstein condensates (BEC) against the mean-field collapse. Stabilization of the condensate has been observed in quantum degenerate Bose-Bose mixtures and dipolar BECs. The fine-tuning of the interatomic interactions can lead to the emergence of two new states of matter: liquid-like selfbound quantum droplets and supersolid crystals formed from these droplets. We review the properties of these exotic states of matter and summarize the experimental progress made using dipolar quantum gases and Bose-Bose mixtures. We conclude with an outline of important open questions that could be addressed in the future. △ Less

Submitted 22 September, 2020; v1 submitted 13 July, 2020; originally announced July 2020.

Simultaneous Evaluation of Heat Capacity and In-plane Thermal Conductivity of Nanocrystalline Diamond Thin Films

Authors: Luke Yates, Zhe Cheng, Tingyu Bai, Karl Hobart, Marko Tadjer, Tatyana I. Feygelson, Bradford B. Pate, Mark Goorsky, Samuel Graham

Abstract: As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been demonstrated as an effective solution for thermal management of these devices by directly growing onto the transistor substrate. A key aspect of power and radio frequ… ▽ More As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been demonstrated as an effective solution for thermal management of these devices by directly growing onto the transistor substrate. A key aspect of power and radio frequency (RF) electronic devices involves transient switching behavior, which highlights the importance of understanding the temperature dependence of the heat capacity and thermal conductivity when modeling and predicting device electrothermal response. Due to the complicated microstructure near the interface between CVD diamond and electronics, it is difficult to measure both properties simultaneously. In this work, we use time domain thermoreflectance (TDTR) to simultaneously measure the in plane thermal conductivity and heat capacity of a 1 um thick CVD diamond film, and also use the pump as an effective heater to perform temperature dependent measurements. The results show that the in plane thermal conductivity varied slightly with an average of 103 W per meter per K over a temperature range of 302 to 327 K, while the specific heat capacity has a strong temperature dependence over the same range and matches with heat capacity data of natural diamond in literature. △ Less

Submitted 22 June, 2020; originally announced June 2020.

Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique

Authors: Zhe Cheng, Fengwen Mu, Tiangui You, Wenhui Xu, Jingjing Shi, Michael E. Liao, Yekan Wang, Kenny Huynh, Tadatomo Suga, Mark S. Goorsky, Xin Ou, Samuel Graham

Abstract: The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude lower than other wide/ultrawide bandgap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating,… ▽ More The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude lower than other wide/ultrawide bandgap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, aggressive thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate wafer-scale monocrystalline \b{eta}-Ga2O3 thin films on high thermal conductivity SiC substrates by ion-cutting technique. The thermal boundary conductance (TBC) of the \b{eta}-Ga2O3-SiC interfaces and thermal conductivity of the \b{eta}-Ga2O3 thin films were measured by Time-domain Thermoreflectance (TDTR) to evaluate the effects of interlayer thickness and thermal annealing. Materials characterizations were performed to understand the mechanisms of thermal transport in these structures. The results show that the \b{eta}-Ga2O3-SiC TBC values increase with decreasing interlayer thickness and the \b{eta}-Ga2O3 thermal conductivity increases more than twice after annealing at 800 oC due to the removal of implantation-induced strain in the films. A Callaway model is built to understand the measured thermal conductivity. Small spot-to-spot variations of both TBC and Ga2O3 thermal conductivity confirm the uniformity and high-quality of the bonding and exfoliation. Our work paves the way for thermal management of power electronics and \b{eta}-Ga2O3 related semiconductor devices. △ Less

Submitted 26 May, 2020; originally announced May 2020.

Substrate Dependent Resistive Switching in Amorphous-HfOx Memristors: An Experimental and Computational Investigation

Authors: Pradip Basnet, Darshan G Pahinkar, Matthew P. West, Christopher J. Perini, Samuel Graham, Eric M. Vogel

Abstract: While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work, amorphous-HfOX based memristor devices on two different substrates, thin SiO2(280 nm)/Si and glass, with different thermal conductivities in the range from 1.2 to 138 W/m-K… ▽ More While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work, amorphous-HfOX based memristor devices on two different substrates, thin SiO2(280 nm)/Si and glass, with different thermal conductivities in the range from 1.2 to 138 W/m-K were fabricated. Devices on glass substrates exhibit lower reset voltage, wider memory window and, in turn, a higher performance window. In addition, the devices on glass show better endurance than the devices on the SiO2/Si substrate. These devices also show non-volatile multi-level resistances at relatively low operating voltages which is critical for neuromorphic computing applications. A Multiphysics COMSOL computational model is presented that describes the transport of heat, ions and electrons in these structures. The combined experimental and COMSOL simulation results indicate that the long-range thermal environment can have a significant impact on the operation of HfOx-based memristors and that substrates with low thermal conductivity can enhance switching performance. △ Less

Submitted 1 April, 2020; v1 submitted 7 December, 2019; originally announced December 2019.

Comments: 8 pages, 9 figures. Journal of Materials Chemistry C, 2020

Robust, accurate, and efficient: quantum embedding using the Huzinaga level-shift projection operator for complex systems

Authors: Daniel S. Graham, Xuelan Wen, Dhabih V. Chulhai, Jason D. Goodpaster

Abstract: Wave function (WF) in density functional theory (DFT) embedding methods provide a framework for performing localized, high accuracy WF calculations on a system, while not incurring the full computational cost of the WF calculation on the full system. In order to effectively partition a system into localized WF and DFT subsystems, we utilize the Huzinaga level-shift projection operator within an ab… ▽ More Wave function (WF) in density functional theory (DFT) embedding methods provide a framework for performing localized, high accuracy WF calculations on a system, while not incurring the full computational cost of the WF calculation on the full system. In order to effectively partition a system into localized WF and DFT subsystems, we utilize the Huzinaga level-shift projection operator within an absolutely localized basis. In this work, we study the ability of the absolutely localized Huzinaga level-shift projection operator method to study complex WF and DFT partitions, including partitions between multiple covalent bonds, a double bond, and transition metal-ligand bonds. We find that our methodology can accurately describe all of these complex partitions. Additionally, we study the robustness of this method with respect to the WF method, specifically where the embedded systems were described using a multiconfigurational WF method. We found that the method is systematically improvable with respect to both the number of atoms in the WF region and the size of the basis set used, with energy errors less than 1 kcal/mol. Additionally, we calculated the adsorption energy of H$_2$ to a model of an iron metal organic framework (Fe-MOF-74) to within 1 kcal/mol compared to CASPT2 calculations performed on the full model while incurring only a small fraction of the full computational cost. This work demonstrates that the absolutely localized Huzinaga level-shift projection operator method is applicable to very complex systems with difficult electronic structures. △ Less

Submitted 27 November, 2019; originally announced November 2019.

Comments: 33 pages, 8 figures

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

Authors: Zhe Cheng, Yee Rui Koh, Abdullah Mamun, Jingjing Shi, Tingyu Bai, Kenny Huynh, Luke Yates, Zeyu Liu, Ruiyang Li, Eungkyu Lee, Michael Liao, Yekan Wang, Hsuan Ming Yu, Maki Kushimoto, Tengfei Luo, Mark S. Goorsky, Patrick E. Hopkins, Hiroshi Amano, Asif Khan, Samuel Graham

Abstract: AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to i… ▽ More AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick AlN layers by MOCVD with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices. △ Less

Submitted 4 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. Materials 4, 044602 (2020)

Absolutely Localized Projection-Based Embedding for Excited States

Authors: Xuelan Wen, Daniel S. Graham, Dhabih V. Chulhai, Jason D. Goodpaster

Abstract: We present a quantum embedding method that allows for the calculation of local excited states embedded in a Kohn-Sham density functional theory (DFT) environment. Projection-based quantum embedding methodologies provide a rigorous framework for performing DFT-in-DFT and wave function in DFT (WF-in-DFT) calculations. The use of absolute localization, where the density of each subsystem is expanded… ▽ More We present a quantum embedding method that allows for the calculation of local excited states embedded in a Kohn-Sham density functional theory (DFT) environment. Projection-based quantum embedding methodologies provide a rigorous framework for performing DFT-in-DFT and wave function in DFT (WF-in-DFT) calculations. The use of absolute localization, where the density of each subsystem is expanded in only the basis functions associated with the atoms of that subsystem, provide improved computationally efficiency for WF-in-DFT calculations by reducing the number of orbitals in the WF calculation. In this work, we extend absolutely localized projection-based quantum embedding to study localized excited states using EOM-CCSD-in-DFT and TDDFT-in-DFT. The embedding results are highly accurate compared to the corresponding canonical EOM-CCSD and TDDFT results on the full system, with TDDFT-in-DFT frequently more accurate than canonical TDDFT. The absolute localization method is shown to eliminate the spurious low-lying excitation energies for charge transfer states and prevent over delocalization of excited states. Additionally, we attempt to recover the environment response caused by the electronic excitations in the high-level subsystem using different schemes and compare their accuracy. Finally, we apply this method to the calculation of the excited state energy of green fluorescent protein and show that we systematically converge to the full system results. Here we demonstrate how this method can be useful in understanding excited states, specifically which chemical moieties polarize to the excitation. This work shows absolutely localized projection-based quantum embedding can treat local electronic excitations accurately, and make computationally expensive WF methods applicable to systems beyond current computational limits. △ Less

Submitted 26 September, 2019; originally announced September 2019.

Comments: 41 pages, 7 figures

Interfacial Thermal Conductance across Room-Temperature Bonded GaN-Diamond Interfaces for GaN-on-Diamond Devices

Authors: Zhe Cheng, Fengwen Mu, Luke Yates, Tadatomo Suga, Samuel Graham

Abstract: The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and reliability of GaN-based HEMTs are limited by the high channel temperature induced by Joule-heating in the device channel. High thermal conductivity substrates… ▽ More The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and reliability of GaN-based HEMTs are limited by the high channel temperature induced by Joule-heating in the device channel. High thermal conductivity substrates integrated with GaN can improve the extraction of heat from GaN based HEMTs and lower the device operating temperature. However, heterogeneous integration of GaN with diamond substrates is not trivial and presents technical challenges to maximize the heat dissipation potential brought by the diamond substrate. In this work, two modified room temperature surface activated bonding techniques are used to bond GaN and single crystal diamond with different interlayer thicknesses. TDTR is used to measure the thermal properties from room temperature to 480 K. A relatively large TBC of the GaN-diamond interfaces with a 4nm interlayer was observed and material characterization was performed to link the structure of the interface to the TBC. Device modeling shows that the measured GaN-diamond TBC values obtained from bonding can enable high power GaN devices by taking the full advantage of the high thermal conductivity of single crystal diamond and achieve excellent cooling effect. Furthermore, the room-temperature bonding process in this work do not induce stress problem due to different coefficient of thermal expansion in other high temperature integration processes in previous studies. Our work sheds light on the potential for room-temperature heterogeneous integration of semiconductors with diamond for applications of electronics cooling especially for GaN-on-diamond devices. △ Less

Submitted 4 September, 2019; originally announced September 2019.

Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management

Authors: Zhe Cheng, Virginia D. Wheeler, Tingyu Bai, Jingjing Shi, Marko J. Tadjer, Tatyana Feygelson, Karl D. Hobart, Mark S. Goorsky, Samuel Graham

Abstract: Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is significantly lower than that of other wide bandgap semiconductors, which will impact its ability to be used in high power density applications. Thermal management in Ga2O3… ▽ More Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is significantly lower than that of other wide bandgap semiconductors, which will impact its ability to be used in high power density applications. Thermal management in Ga2O3 electronics will be the key for device reliability, especially for high power and high frequency devices. Similar to the method of cooling GaN-based high electron mobility transistors by integrating it with high thermal conductivity diamond substrates, this work studies the possibility of heterogeneous integration of Ga2O3 with diamond for thermal management of Ga2O3 devices. In this work, Ga2O3 was deposited onto single crystal diamond substrates by ALD and the thermal properties of ALD-Ga2O3 thin films and Ga2O3-diamond interfaces with different interface pretreatments were measured by TDTR. We observed very low thermal conductivity of these Ga2O3 thin films due to the extensive phonon grain boundary scattering resulting from the nanocrystalline nature of the Ga2O3 film. However, the measured thermal boundary conductance (TBC) of the Ga2O3-diamond interfaces are about 10 times larger than that of the Van der Waals bonded Ga2O3 diamond interfaces, which indicates the significant impact of interface bonding on TBC. Furthermore, the TBC of the Ga-rich and O-rich Ga2O3-diamond interfaces are about 20% smaller than that of the clean interface, indicating interface chemistry affects interfacial thermal transport. Overall, this study shows that a high TBC can be obtained from strong interfacial bonds across Ga2O3-diamond interfaces, providing a promising route to improving the heat dissipation from Ga2O3 devices. △ Less

Submitted 23 August, 2019; originally announced August 2019.

Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces

Authors: Zhe Cheng, Yee Rui Koh, Habib Ahmad, Renjiu Hu, Jingjing Shi, Michael E. Liao, Yekan Wang, Tingyu Bai, Ruiyang Li, Eungkyu Lee, Evan A. Clinton, Christopher M. Matthews, Zachary Engel, Yates, Tengfei Luo, Mark S. Goorsky, William Doolittle, Zhiting Tian, Patrick E. Hopkins, Samuel Graham

Abstract: A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contamination, and interfacial disorder. This is especially true for metal nonmetal interfaces which incorporate multiple fundamental heat transport mechanis… ▽ More A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contamination, and interfacial disorder. This is especially true for metal nonmetal interfaces which incorporate multiple fundamental heat transport mechanisms such as elastic and inelastic phonon scattering as well as electron phonon coupling in the metal and across the interface. All these factors jointly affect thermal boundary conductance (TBC). As a result, the experimentally measured interfaces may not be the same as the ideally modelled interfaces, thus obfuscating any conclusions drawn from experimental and modeling comparisons. This work provides a systematic study of interfacial thermal conductance across well controlled and ultraclean epitaxial (111) Al parallel (0001) sapphire interfaces, known as harmonic matched interface. A comparison with thermal models such as atomistic Green s function (AGF) and a nonequilibrium Landauer approach shows that elastic phonon scattering dominates the interfacial thermal transport of Al sapphire interface. By scaling the TBC with the Al heat capacity, a nearly constant transmission coefficient is observed, indicating that the phonons on the Al side limits the Al sapphire TBC. This nearly constant transmission coefficient validates the assumptions in AGF and nonequilibrium Landauer calculations. Our work not only provides a benchmark for interfacial thermal conductance across metal nonmetal interfaces and enables a quantitative study of TBC to validate theoretical thermal carrier transport mechanisms, but also acts as a reference when studying how other factors impact TBC. △ Less

Submitted 23 September, 2019; v1 submitted 13 June, 2019; originally announced June 2019.

Journal ref: Communications Physics 3.1 (2020): 1-8

High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces

Authors: Fengwen Mu, Zhe Cheng, Jingjing Shi, Seongbin Shin, Bin Xu, Junichiro Shiomi, Samuel Graham, Tadatomo Suga

Abstract: GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device performance and reliability. Increasing the TBC between GaN and SiC will aid in the heat dissipation of GaN-on-SiC power devices, taking advantage of the high thermal… ▽ More GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device performance and reliability. Increasing the TBC between GaN and SiC will aid in the heat dissipation of GaN-on-SiC power devices, taking advantage of the high thermal conductivity of the SiC substrate. However, a good understanding of the TBC of this technically important interface is still lacking due to the complicated nature of interfacial heat transport. In this work, a lattice-mismatch-insensitive surface activated bonding method is used to bond GaN directly to SiC and thus eliminating the AlN layer altogether. This allows for the direct integration of high quality GaN layers with SiC to create a high thermal boundary conductance interface. TDTR is used to measure the thermal properties of the GaN thermal conductivity and GaN-SiC TBC. The measured GaN thermal conductivity is larger than that of GaN grown by MBE on SiC, showing the impact of reducing the dislocations in the GaN near the interface. High GaN-SiC TBC is observed for the bonded GaN-SiC interfaces, especially for the annealed interface whose TBC (230 MW/m2-K) is close to the highest values ever reported. To understand the structure-thermal property relation, STEM and EELS are used to characterize the interface structure. The results show that, for the as-bonded sample, there exists an amorphous layer near the interface for the as bonded samples. This amorphous layer is crystallized upon annealing, leading to the high TBC found in our work. Our work paves the way for thermal transport across bonded interfaces, which will impact real-world applications of semiconductor integration and packaging. △ Less

Submitted 10 May, 2019; originally announced May 2019.

Competing Electronic Configurations for PuTe and New Insight on Plutonium Metal

Authors: J. J. Joyce, K. S. Graham, J. -X. Zhu, G. H. Lander, H. Choi, T. Durakiewicz, J. M. Wills, P. H. Tobash, E. D. Bauer, J. N. Mitchell

Abstract: The electronic structure of plutonium metal and its compounds pose a grand challenge for a fundamental understanding of the Pu-5$f$ electron character. For 30 years the plutonium chalcogenides have been especially challenging, and multiple theoretical scenarios have been proposed to explain their unusual behavior. We present extensive high-resolution photoemission data on a single crystal of PuTe,… ▽ More The electronic structure of plutonium metal and its compounds pose a grand challenge for a fundamental understanding of the Pu-5$f$ electron character. For 30 years the plutonium chalcogenides have been especially challenging, and multiple theoretical scenarios have been proposed to explain their unusual behavior. We present extensive high-resolution photoemission data on a single crystal of PuTe, which has also been proposed as a topological insulator. The new experimental results on this mixed-valent material provide a constraint to the theoretical modeling and new dynamical mean-field theory calculations agree with the experimental results. Comparisons with Pu metal provide new insight in understanding its complex electronic structure. △ Less

Submitted 5 May, 2019; originally announced May 2019.

Comments: 5 pages with 4 eps figures embedded, supplementary material

Report number: LA-UR-19-20178

Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices

Authors: Zhe Cheng, Nicholas Tanen, Celesta Chang, Jingjing Shi, Jonathan McCandless, David Muller, Debdeep Jena, Huili Grace Xing, Samuel Graham

Abstract: Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least one order of magnitude lower than that of other wide bandgap semiconductors such as SiC and GaN. Thermal dissipation in electronics made from beta-… ▽ More Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least one order of magnitude lower than that of other wide bandgap semiconductors such as SiC and GaN. Thermal dissipation in electronics made from beta-Ga2O3 will be the bottleneck for real-world applications, especially for high power and high frequency devices. Similar to GaN/AlGaN interfaces, beta-(AlxGa1-x)2O3/Ga2O3 heterogeneous structures have been used to form a high mobility two-dimensional electron gas (2DEG) where joule heating is localized. The thermal properties of beta-(AlxGa1-x)2O3/Ga2O3 are the key for heat dissipation in these devices while they have not been studied before. This work reports the first measurement on thermal conductivity of beta-(Al0.1Ga0.9)2O3/Ga2O3 superlattices from 80 K to 480 K. Its thermal conductivity is significantly reduced (5.7 times reduction) at room temperature comparing with that of bulk Ga2O3. Additionally, the thermal conductivity of bulk Ga2O3 with (010) orientation is measured and found to be consistent with literature values regardless of Sn doping. We discuss the phonon scattering mechanism in these structures by calculating their inverse thermal diffusivity. By comparing the estimated thermal boundary conductance (TBC) of beta-(Al0.1Ga0.9)2O3/Ga2O3 interfaces and Ga2O3 maximum TBC, we reveal that some phonons in the superlattices transmit through several interfaces before scattering with other phonons or structural imperfections. This study is not only important for Ga2O3 electronics applications especially for high power and high frequency applications, but also for the fundamental thermal science of phonon transport across interfaces and in superlattices. △ Less

Submitted 30 April, 2019; originally announced May 2019.

Journal ref: Applied Physics Letter 115, 092105 (2019)

Thermal Conductance across beta-Ga2O3-diamond Van der Waals Heterogeneous Interfaces

Authors: Zhe Cheng, Luke Yates, Jingjing Shi, Marko J. Tadjer, Karl D. Hobart, Samuel Graham

Abstract: Because of its ultrawide bandgap, high breakdown electric field, and large area affordable substrates grown from the melt, beta Ga2O3 has attracted great attention recently for potential applications of power electronics. However, its thermal conductivity is significantly lower than those of other wide bandgap semiconductors, such as AlN, SiC, GaN, and diamond. To ensure reliable operation with mi… ▽ More Because of its ultrawide bandgap, high breakdown electric field, and large area affordable substrates grown from the melt, beta Ga2O3 has attracted great attention recently for potential applications of power electronics. However, its thermal conductivity is significantly lower than those of other wide bandgap semiconductors, such as AlN, SiC, GaN, and diamond. To ensure reliable operation with minimal selfheating at high power, proper thermal management is even more essential for Ga2O3 devices. Similarly to the past approaches aiming to alleviate selfheating in GaN HEMTs, a possible solution has been to integrate thin Ga2O3 membranes with diamond to fabricate Ga2O3 on diamond lateral MESFET or MOSFET devices by taking advantage of the ultra high thermal conductivity of diamond. Even though the TBC between wide bandgap semiconductor devices such as GaN HEMTs and a diamond substrate is of primary importance for heat dissipation in these devices, fundamental understanding of the Ga2O3 diamond thermal interface is still missing. In this work, we study the thermal transport across the interfaces of Ga2O3 exfoliated onto a single crystal diamond. The Van der Waals bonded Ga2O3 diamond TBC is measured to be 17 MWm2K1, which is comparable to the TBC of several physical vapor deposited metals on diamond. A Landauer approach is used to help understand phonon transport across perfect Ga2O3 diamond interface, which in turn sheds light on the possible TBC one could achieve with an optimized interface. A reduced thermal conductivity of the Ga2O3 nanomembrane is also observed due to additional phonon membrane boundary scattering. The impact of the Ga2O3substrate TBC and substrate thermal conductivity on the thermal performance of a power device are modeled and discussed. △ Less

Submitted 9 January, 2019; originally announced January 2019.

Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy

Authors: Zhe Cheng, Tingyu Bai, Jingjing Shi, Tianli Feng, Yekan Wang, Matthew Mecklenburg, Chao Li, Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Bradford B. Pate, Brian M. Foley, Luke Yates, Sokrates T. Pantelides, Baratunde A. Cola, Mark Goorsky, Samuel Graham

Abstract: The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at interface between dissimilar materials. However, controlling and tuning heat transport… ▽ More The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at interface between dissimilar materials. However, controlling and tuning heat transport across an interface and in the adjacent materials has so far drawn limited attention. In this work, we grow chemical-vapor-deposited (CVD) diamond on silicon substrates by graphoepitaxy and experimentally demonstrate tunable thermal transport across diamond membranes and diamond-silicon interfaces. We observed the highest diamond-silicon thermal boundary conductance (TBC) measured to date and increased diamond thermal conductivity due to strong grain texturing in the diamond near the interface. Additionally, non-equilibrium molecular-dynamics (NEMD) simulations and a Landauer approach are used to understand the diamond-silicon TBC. These findings pave the way for tuning or increasing thermal conductance in heterogeneously integrated electronics that involve polycrystalline materials and will impact applications including electronics thermal management and diamond growth. △ Less

Submitted 7 January, 2019; v1 submitted 30 July, 2018; originally announced July 2018.

Diffuson-driven Ultralow Thermal Conductivity in Amorphous Nb2O5 Thin Films

Authors: Zhe Cheng, Alex Weidenbach, Tianli Feng, M. Brooks Tellekamp, Sebastian Howard, Matthew J. Wahila, Bill Zivasatienraj, Brian Foley, Sokrates T. Pantelides, Louis F. J. Piper, William Doolittle, Samuel Graham

Abstract: Niobium pentoxide (Nb2O5) has been extensively reported for applications of electrochemical energy storage, memristors, solar cells, light emitting diodes (LEDs), and electrochromic devices. The thermal properties of Nb2O5 play a critical role in device performance of these applications. However, very few studies on the thermal properties of Nb2O5 have been reported and a fundamental understanding… ▽ More Niobium pentoxide (Nb2O5) has been extensively reported for applications of electrochemical energy storage, memristors, solar cells, light emitting diodes (LEDs), and electrochromic devices. The thermal properties of Nb2O5 play a critical role in device performance of these applications. However, very few studies on the thermal properties of Nb2O5 have been reported and a fundamental understanding of heat transport in Nb2O5 is still lacking. The present work closes this gap and provides the first study of thermal conductivity of amorphous Nb2O5 thin films. Ultralow thermal conductivity is observed without any size effect in films as thin as 48 nm, which indicates that propagons contribute negligibly to the thermal conductivity and that the thermal transport is dominated by diffusons. Density-function-theory (DFT) simulations combined with a diffuson-mediated minimum-thermal-conductivity model confirms this finding. Additionally, the measured thermal conductivity is lower than the amorphous limit (Cahill model), which proves that the diffuson model works better than the Cahill model to describe the thermal conduction mechanism in the amorphous Nb2O5 thin films. Additionally, the thermal conductivity does not change significantly with oxygen vacancy concentration. This stable and low thermal conductivity facilitates excellent performance for applications such as memristors. △ Less

Submitted 14 July, 2018; originally announced July 2018.

Journal ref: Phys. Rev. Materials 3, 025002 (2019)

Direct Visualization of Thermal Conductivity Suppression Due to Enhanced Phonon Scattering Near Individual Grain Boundaries

Authors: Aditya Sood, Ramez Cheaito, Tingyu Bai, Heungdong Kwon, Yekan Wang, Chao Li, Luke Yates, Thomas Bougher, Samuel Graham, Mehdi Asheghi, Mark Goorsky, Kenneth E. Goodson

Abstract: Understanding the impact of lattice imperfections on nanoscale thermal transport is crucial for diverse applications ranging from thermal management to energy conversion. Grain boundaries (GBs) are ubiquitous defects in polycrystalline materials, which scatter phonons and reduce thermal conductivity. Historically, their impact on heat conduction has been studied indirectly through spatially-averag… ▽ More Understanding the impact of lattice imperfections on nanoscale thermal transport is crucial for diverse applications ranging from thermal management to energy conversion. Grain boundaries (GBs) are ubiquitous defects in polycrystalline materials, which scatter phonons and reduce thermal conductivity. Historically, their impact on heat conduction has been studied indirectly through spatially-averaged measurements, that provide little information about phonon transport near a single GB. Here, using spatially-resolved time-domain thermoreflectance (TDTR) measurements in combination with electron backscatter diffraction (EBSD), we make localized measurements of thermal conductivity within few μm of individual GBs in boron-doped polycrystalline diamond. We observe strongly suppressed thermal transport near GBs, a reduction in conductivity from ~1000 W/m-K at the center of large grains to ~400 W/m-K in the immediate vicinity of GBs. Furthermore, we show that this reduction in conductivity is measured up to ~10 μm away from a GB. A theoretical model is proposed that captures the local reduction in phonon mean-free-paths due to strongly diffuse phonon scattering at the disordered grain boundaries. Our results provide a new framework for understanding phonon-defect interactions in nanomaterials, with implications for the use of high thermal conductivity polycrystalline materials as heat sinks in electronics thermal management. △ Less

Submitted 29 July, 2018; v1 submitted 11 April, 2018; originally announced April 2018.

Comments: This document is the unedited Author's version of a submitted work that was subsequently accepted for publication in Nano Letters, copyright American Chemical Society after peer review. To access the final edited and published work see this URL: https://pubs.acs.org/doi/10.1021/acs.nanolett.8b00534. Version 2: Updates Supplementary Figs S1 and S3. The journal published version is correct

Journal ref: Nano Lett. 2018, 18 (6), pp 3466-3472

Stable spin domains in a non-degenerate ultra-cold gas

Authors: S. D. Graham, D. Niroomand, R. J. Ragan, J. M. McGuirk

Abstract: We study the stability of two-domain spin structures in an ultra-cold gas of magnetically trapped $^{87}$Rb atoms above quantum degeneracy. Adding a small effective magnetic field gradient stabilizes the domains via coherent collective spin rotation effects, despite negligibly perturbing the potential energy relative to the thermal energy. We demonstrate that domain stabilization is accomplished t… ▽ More We study the stability of two-domain spin structures in an ultra-cold gas of magnetically trapped $^{87}$Rb atoms above quantum degeneracy. Adding a small effective magnetic field gradient stabilizes the domains via coherent collective spin rotation effects, despite negligibly perturbing the potential energy relative to the thermal energy. We demonstrate that domain stabilization is accomplished through decoupling the dynamics of longitudinal magnetization, which remains in time-independent domains, from transverse magnetization, which undergoes a purely transverse spin wave trapped within the domain wall. We explore the effect of temperature and density on the steady-state domains, and compare our results to a hydrodynamic solution to a quantum Boltzmann equation. △ Less

Submitted 2 March, 2018; originally announced March 2018.

Journal ref: Phys. Rev. A 97, 051603 (2018)

Thermal Rectification in CVD Diamond Membranes Driven by Gradient Grain Structure

Authors: Zhe Cheng, Brian M. Foley, Thomas Bougher, Luke Yates, Baratunde A. Cola, Samuel Graham

Abstract: As one of the basic components of phononics, thermal diodes transmit heat current asymmetrically similar to electronic rectifiers and diodes in microelectronics. Heat can be conducted through them easily in one direction while being blocked in the other direction. In this work, we report an easily-fabricated mesoscale chemical vapor deposited (CVD) diamond thermal diode without sharp temperature c… ▽ More As one of the basic components of phononics, thermal diodes transmit heat current asymmetrically similar to electronic rectifiers and diodes in microelectronics. Heat can be conducted through them easily in one direction while being blocked in the other direction. In this work, we report an easily-fabricated mesoscale chemical vapor deposited (CVD) diamond thermal diode without sharp temperature change driven by the gradient grain structure of CVD diamond membranes. We build a spectral model of diamond thermal conductivity with complete phonon dispersion relation to show significant thermal rectification in CVD diamond membranes. To explain the observed thermal rectification, the temperature and thermal conductivity distribution in the CVD diamond membrane are studied. Additionally, the effects of temperature bias and diamond membrane thickness are discussed, which shed light on tuning the thermal rectification in CVD diamond membranes. The conical grain structure makes CVD diamond membranes, and potentially other CVD film structures with gradient grain structure, excellent candidates for easily-fabricated mesoscale thermal diodes without a sharp temperature change. △ Less

Submitted 29 December, 2017; v1 submitted 19 December, 2017; originally announced December 2017.

Thermal boundary conductance across epitaxial ZnO/GaN interfaces: Assessment of phonon gas models and atomistic Green's function approaches for predicting interfacial phonon transport

Authors: John T. Gaskins, George Kotsonis, Ashutosh Giri, Christopher T. Shelton, Edward Sachet, Zhe Cheng, Brian M. Foley, Zeyu Liu, Shenghong Ju, Junichiro, Mark S. Goorsky, Samuel Graham, Tengfei Luo, Asegun Henry, Jon-Paul Maria, Patrick E. Hopkins

Abstract: We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green's function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous ex… ▽ More We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green's function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous experimental data, suggest that the TBC can be influenced by long wavelength, zone center modes in a material on one side of the interface as opposed to the "vibrational mismatch" concept assumed in the DMM; this disagreement is pronounced at high temperatures. At room temperature, we measure the ZnO/GaN TBC as $490\lbrack +150, -110\rbrack$ MW m$^{-2}$ K$^{-1}$. The disagreement among the DMM and AGF and the experimental data these elevated temperatures suggests a non-negligible contribution from additional modes contributing to TBC that not accounted for in the fundamental assumptions of these harmonic formalisms, such as inelastic scattering. Given the high quality of these ZnO/GaN interface, these results provide an invaluable critical and quantitive assessment of the accuracy of assumptions in the current state of the art of computational approaches for predicting the phonon TBC across interfaces. △ Less

Submitted 25 October, 2017; originally announced October 2017.

Comments: 7 pages, 3 figures

Probing Growth-Induced Anisotropic Thermal Transport in CVD Diamond Membranes by Multi-frequency and Multi-spot-size Time-Domain Thermoreflectance

Authors: Zhe Cheng, Thomas Bougher, Tingyu Bai, Steven Y. Wang, Chao Li, Luke Yates, Brian M. Foley, Mark Goorsky, Baratunde A. Cola, Samuel Graham

Abstract: The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating which degrades device performance and reliability. With generated heat fluxes within these devices reaching magnitude close to ten times of that at the sun surface, chemical vapor deposition (CVD) diamond is an attractive candidate to aid in the extracti… ▽ More The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating which degrades device performance and reliability. With generated heat fluxes within these devices reaching magnitude close to ten times of that at the sun surface, chemical vapor deposition (CVD) diamond is an attractive candidate to aid in the extraction of this heat in order to keep the operating temperatures of these high power electronics as low as possible. Due to the observed inhomogeneous structure, CVD diamond membranes exhibit a 3D anisotropic thermal conductivity which may result in significantly different cooling performance from expected in a given application. In this work, time domain thermoreflectance (TDTR) is used to measure the thermal properties of an 11.8-μm CVD diamond membrane from its nucleation side. Starting with a spot size diameter larger than the thickness of the membrane, measurements are made at various modulation frequencies from 1.2 MHz to 11.6 MHz to tune the heat penetration depth, and subsequently the part of diamond sampled by TDTR. We divide the membrane into ten sublayers and assume isotropic thermal conductivity in each sublayer. From this, we observe a 2D gradient of the depth-dependent thermal conductivity for this membrane. By measuring the same region with a smaller spot size at multiple frequencies, the in-plane and cross-plane thermal conductivity are extracted respectively. Through this use of multiple spot sizes and modulation frequencies, the 3D anisotropic thermal conductivity of CVD diamond membrane is experimentally obtained by fitting the experimental data to a thermal model. This work provides insight toward an improved understanding of heat conduction inhomogeneity in CVD polycrystalline diamond membrane that is important for applications of thermal management of high power electronics. △ Less

Submitted 1 August, 2017; originally announced August 2017.

Retardation effects in induced atomic dipole-dipole interactions

Authors: S. D. Graham, J. M. McGuirk

Abstract: We present mean-field calculations of azimuthally averaged retarded dipole-dipole interactions in a Bose-Einstein condensate induced by a laser, at both long and short wavelengths. Our calculations demonstrate that dipole-dipole interactions become significantly stronger at shorter wavelengths, by as much as 30-fold, due to retardation effects. This enhancement, along with inclusion of the dynamic… ▽ More We present mean-field calculations of azimuthally averaged retarded dipole-dipole interactions in a Bose-Einstein condensate induced by a laser, at both long and short wavelengths. Our calculations demonstrate that dipole-dipole interactions become significantly stronger at shorter wavelengths, by as much as 30-fold, due to retardation effects. This enhancement, along with inclusion of the dynamic polarizability, indicate a method of inducing long-range interatomic interactions in neutral atom condensates at significantly lower intensities than previously realized. △ Less

Submitted 18 October, 2016; originally announced October 2016.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. A 95, 023602 (2017)

Longitudinal spin diffusion in a nondegenerate trapped $^{87}$Rb gas

Authors: D. Niroomand, S. D. Graham, J. M. McGuirk

Abstract: Longitudinal spin diffusion of two pseudo-spin domains is studied in a trapped $^{87}$Rb sample above quantum degeneracy, and the effect of coherence in the domain wall on the dynamics of the system is investigated. Coherence in a domain wall leads to transverse-spin-mediated longitudinal spin diffusion that is slower than classical predictions, as well as altering the domains' oscillation frequen… ▽ More Longitudinal spin diffusion of two pseudo-spin domains is studied in a trapped $^{87}$Rb sample above quantum degeneracy, and the effect of coherence in the domain wall on the dynamics of the system is investigated. Coherence in a domain wall leads to transverse-spin-mediated longitudinal spin diffusion that is slower than classical predictions, as well as altering the domains' oscillation frequency. The system also shows an instability in the longitudinal spin dynamics as longitudinal and transverse spin components couple, and a conversion of longitudinal spin to transverse spin is observed, resulting in an increase in the total amount of coherence in the system. △ Less

Submitted 29 May, 2015; v1 submitted 15 January, 2015; originally announced January 2015.

Journal ref: Phys. Rev. Lett. 115, 075302 (2015)

Reduced graphene oxide thin films as ultrabarriers for organic electronics

Authors: Hisato Yamaguchi, Jimmy Granstrom, Wanyi Nie, Hossein Sojoudi, Takeshi Fujita, Damien Voiry, Mingwei Chen, Gautam Gupta, Aditya D. Mohite, Samuel Graham, Manish Chhowalla

Abstract: Encapsulation of electronic devices based on organic materials that are prone to degradation even under normal atmospheric conditions with hermetic barriers is crucial for increasing their lifetime. A challenge is to develop 'ultrabarriers' that are impermeable, flexible, and preferably transparent. Another important requirement is that they must be compatible with organic electronics fabrication… ▽ More Encapsulation of electronic devices based on organic materials that are prone to degradation even under normal atmospheric conditions with hermetic barriers is crucial for increasing their lifetime. A challenge is to develop 'ultrabarriers' that are impermeable, flexible, and preferably transparent. Another important requirement is that they must be compatible with organic electronics fabrication schemes (i.e. must be solution processable, deposited at room temperature and be chemically inert). Here, we report lifetime increase of 1,300 hours for poly(3-hexylthiophene) (P3HT) films encapsulated by uniform and continuous thin (~10 nm) films of reduced graphene oxide (rGO). This level of protection against oxygen and water vapor diffusion is substantially better than conventional polymeric barriers such as CytopTM, which degrades after only 350 hours despite being 400 nm thick. Analysis using atomic force microscopy, x-ray photoelectron spectroscopy and high resolution transmission electron microscopy suggest that the superior oxygen gas/moisture barrier property of rGO is due to the close interlayer distance packing and absence of pinholes within the impermeable sheets. These material properties can be correlated to the enhanced lag time of 500 hours. Our results provide new insight for the design of high performance and solution processable transparent 'ultrabarriers' for a wide range of encapsulation applications. △ Less

Submitted 15 October, 2013; originally announced October 2013.

Comments: Advanced Energy Materials (2013)

Coarse-grained simulations of flow-induced nucleation in semi-crystalline polymers

Authors: Richard S. Graham, Peter D. Olmsted

Abstract: We perform kinetic Monte Carlo simulations of flow-induced nucleation in polymer melts with an algorithm that is tractable even at low undercooling. The configuration of the non-crystallized chains under flow is computed with a recent non-linear tube model. Our simulations predict both enhanced nucleation and the growth of shish-like elongated nuclei for sufficiently fast flows. The simulations… ▽ More We perform kinetic Monte Carlo simulations of flow-induced nucleation in polymer melts with an algorithm that is tractable even at low undercooling. The configuration of the non-crystallized chains under flow is computed with a recent non-linear tube model. Our simulations predict both enhanced nucleation and the growth of shish-like elongated nuclei for sufficiently fast flows. The simulations predict several experimental phenomena and theoretically justify a previously empirical result for the flow-enhanced nucleation rate. The simulations are highly pertinent to both the fundamental understanding and process modeling of flow-induced crystallization in polymer melts. △ Less

Submitted 1 September, 2009; originally announced September 2009.

Comments: 17 pages, 6 eps figures

Damage Spreading During Domain Growth

Authors: I. S. Graham, E. Hernandez-Garcia, M. Grant

Abstract: We study damage spreading in models of two-dimensional systems undergoing first order phase transitions. We consider several models from the same non-conserved order parameter universality class, and find unexpected differences between them. An exact solution of the Ohta-Jasnow-Kawasaki model yields the damage growth law $D \sim t^φ$, where $φ= t^{d/4}$ in $d$ dimensions. In contrast, time-depen… ▽ More We study damage spreading in models of two-dimensional systems undergoing first order phase transitions. We consider several models from the same non-conserved order parameter universality class, and find unexpected differences between them. An exact solution of the Ohta-Jasnow-Kawasaki model yields the damage growth law $D \sim t^φ$, where $φ= t^{d/4}$ in $d$ dimensions. In contrast, time-dependent Ginzburg-Landau simulations and Ising simulations in $d= 2$ using heat-bath dynamics show power-law growth, but with an exponent of approximately $0.36$, independent of the system sizes studied. In marked contrast, Metropolis dynamics shows damage growing via $φ\sim 1$, although the damage difference grows as $t^{0.4}$. PACS: 64.60.-i, 05.50.+q △ Less

Submitted 7 April, 1994; originally announced April 1994.

Comments: 4 pags of revtex3 + 3 postscript files appended as a compressed and uuencoded file. UIB9403200

Journal ref: Phys. Rev. E 49, R4763-4766 (1994)