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Controlling disorder in the ZnGa$_2$O$_4$:Cr$^{3+}$ persistent phosphor by Mg$^{2+}$ substitution
Authors:
Neelima Basavaraju,
Kaustubh R. Priolkar,
Aurélie Bessière,
Suchinder K. Sharma,
Didier Gourier,
Laurent Binet,
Bruno Viana,
Shuichi Emura
Abstract:
We have studied in this work the effect of increasing structural disorder on the persistent luminescence of Cr$^{3+}$ doped zinc gallate spinel. This disorder was introduced by progressive substitution of Zn$^{2+}$ by Mg$^{2+}$ ions, and was studied by photoluminescence, X-ray diffraction, extended X-ray absorption fine structure (EXAFS), X-ray absorption near edge structure (XANES) and electron p…
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We have studied in this work the effect of increasing structural disorder on the persistent luminescence of Cr$^{3+}$ doped zinc gallate spinel. This disorder was introduced by progressive substitution of Zn$^{2+}$ by Mg$^{2+}$ ions, and was studied by photoluminescence, X-ray diffraction, extended X-ray absorption fine structure (EXAFS), X-ray absorption near edge structure (XANES) and electron paramagnetic resonance (EPR) spectroscopy. It was found that increasing Mg/Zn substitution decreases the number of Cr$^{3+}$ in undistorted sites, and increases the number of Cr$^{3+}$ with neighbouring antisite defects and with neighbouring Cr$^{3+}$ ions (referred as Cr clusters), which in turn decreases the intensity of persistent luminescence. Both XANES and EPR spectra could be simulated by a linear combination of Cr$^{3+}$ spectra with three types of Cr$^{3+}$ environments. The increasing disorder was found to be correlated with a decrease of the average Cr-O bond length and a decrease of crystal field strength experienced by Cr$^{3+}$ ions.
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Submitted 27 January, 2017;
originally announced January 2017.
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Order and disorder around Cr$^{3+}$ in chromium doped persistent luminescence AB$_2$O$_4$ spinels
Authors:
Neelima Basavaraju,
Kaustubh R. Priolkar,
Didier Gourier,
Aurélie Bessière,
Bruno Viana
Abstract:
X-ray absorption near edge structure (XANES) spectroscopy technique is used to better understand the charging and decharging processes of the persistent luminescence in the Cr$^{3+}$ doped AB$_2$O$_4$ spinels (A = Zn, Mg and B = Ga and Al) with low photon energy excitation by visible light. Cr K edge XANES spectra have been simulated for different near neighbour environments around the Cr$^{3+}$ r…
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X-ray absorption near edge structure (XANES) spectroscopy technique is used to better understand the charging and decharging processes of the persistent luminescence in the Cr$^{3+}$ doped AB$_2$O$_4$ spinels (A = Zn, Mg and B = Ga and Al) with low photon energy excitation by visible light. Cr K edge XANES spectra have been simulated for different near neighbour environments around the Cr$^{3+}$ recombination centres and compared with the experimental curve. In Cr$^{3+}$:ZnGa$_2$O$_4$ compound, the Cr$^{3+}$ local structure corresponds mostly to that of a normal spinel ($\sim$70\%), while the rest comprises of distorted octahedral environment arising from cationic site inversion and a contribution from chromium clustering. This local structure is strongly different in Cr$^{3+}$:MgGa$_2$O$_4$ and Cr$^{3+}$:ZnAl$_2$O$_4$ where, for both cases, chromium clustering represents the main contribution. The strong correlation between the intensity of persistent luminescence and \% of Cr in clusters leads us to infer that presence of Cr clusters is responsible for decrease of the intensity of the visible light induced persistent luminescence in the Cr$^{3+}$ doped AB$_2$O$_4$ spinels.
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Submitted 27 March, 2015;
originally announced March 2015.
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The importance of inversion disorder in the visible light induced persistent luminescence in Cr$^{3+}$ doped AB$_2$O$_4$ (A = Zn or Mg and B = Ga or Al)
Authors:
Neelima Basavaraju,
K. R. Priolkar,
Didier Gourier,
Suchinder K. Sharma,
Aurelie Bessiere,
Bruno Viana
Abstract:
Cr$^{3+}$ doped spinel compounds AB$_2$O$_4$ with A=Zn, Mg and B=Ga, Al exhibit a long near infrared persistent luminescence when excited with UV or X-rays. In addition, persistent luminescence of ZnGa$_2$O$_4$ and to a lesser extent MgGa$_2$O$_4$, can also be induced by visible light excitation via $^4$A$_2$ $ \rightarrow $ $^4$T$_2$ transition of Cr$^{3+}$, which makes these compounds suitable a…
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Cr$^{3+}$ doped spinel compounds AB$_2$O$_4$ with A=Zn, Mg and B=Ga, Al exhibit a long near infrared persistent luminescence when excited with UV or X-rays. In addition, persistent luminescence of ZnGa$_2$O$_4$ and to a lesser extent MgGa$_2$O$_4$, can also be induced by visible light excitation via $^4$A$_2$ $ \rightarrow $ $^4$T$_2$ transition of Cr$^{3+}$, which makes these compounds suitable as biomarkers for in vivo optical imaging of small animals. We correlate this peculiar optical property with the presence of antisite defects, which are present in ZnGa$_2$O$_4$ and MgGa$_2$O$_4$. By using X-ray absorption fine structure (XAFS) spectroscopy, associated with electron paramagnetic resonance (EPR) and optical emission spectroscopy, it is shown that an increase in antisite defects concentration results in a decrease in the Cr-O bond length and the octahedral crystal field energy. A part of the defects are in the close environment of Cr$^{3+}$ ions, as shown by the increasing strain broadening of EPR and XAFS peaks observed upon increasing antisite disorder. It appears that ZnAl$_2$O$_4$, which exhibits the largest crystal field splitting of Cr$^{3+}$ and the smallest antisite disorder, does not show considerable persistent luminescence upon visible light excitation as compared to ZnGa$_2$O$_4$ and MgGa$_2$O$_4$. These results highlight the importance of Cr$^{3+}$ ions with neighboring antisite defects in the mechanism of persistent luminescence exhibited by Cr$^{3+}$ doped AB$_2$O$_4$ spinel compounds.
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Submitted 29 December, 2014;
originally announced December 2014.
