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Showing 1–1 of 1 results for author: Gotterbarm, K

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  1. Growth and Electronic Structure of Boron-Doped Graphene

    Authors: J. Gebhardt, R. J. Koch, W. Zhao, O. Höfert, K. Gotterbarm, S. Mammadov, C. Papp, A. Görling, H. -P. Steinrück, Th. Seyller

    Abstract: The doping of graphene to tune its electronic structure is essential for its further use in carbon based electronics. Adapting strategies from classical silicon based semiconductor technology, we use the incorporation of heteroatoms in the 2D graphene network as a straightforward way to achieve this goal. Here, we report on the synthesis of boron-doped graphene on Ni(111) in a chemical vapor depos… ▽ More

    Submitted 2 December, 2012; originally announced December 2012.