-
An 11-qubit atom processor in silicon
Authors:
Hermann Edlbauer,
Junliang Wang,
A. M. Saffat-Ee Huq,
Ian Thorvaldson,
Michael T. Jones,
Saiful Haque Misha,
William J. Pappas,
Christian M. Moehle,
Yu-Ling Hsueh,
Henric Bornemann,
Samuel K. Gorman,
Yousun Chung,
Joris G. Keizer,
Ludwik Kranz,
Michelle Y. Simmons
Abstract:
Phosphorus atoms in silicon are an outstanding platform for quantum computing as their nuclear spins exhibit coherence time over seconds. By placing multiple phosphorus atoms within a radius of a few nanometers, they couple via the hyperfine interaction to a single, shared electron. Such a nuclear spin register enables multi-qubit control above the fault-tolerant threshold and the execution of sma…
▽ More
Phosphorus atoms in silicon are an outstanding platform for quantum computing as their nuclear spins exhibit coherence time over seconds. By placing multiple phosphorus atoms within a radius of a few nanometers, they couple via the hyperfine interaction to a single, shared electron. Such a nuclear spin register enables multi-qubit control above the fault-tolerant threshold and the execution of small-scale quantum algorithms. To achieve quantum error correction, fast and efficient interconnects have to be implemented between spin registers while maintaining high fidelity across all qubit metrics. Here, we demonstrate such integration with a fully controlled 11-qubit atom processor composed of two multi-nuclear spin registers which are linked via electron exchange interaction. Through the development of scalable calibration and control protocols, we achieve coherent coupling between nuclear spins using a combination of single- and multi-qubit gates with all fidelities ranging from 99.5% to 99.99%. We verify the efficient all-to-all connectivity by preparing both local and non-local Bell states with a record state fidelity beyond 99% and extend entanglement through the generation of Greenberger-Horne-Zeilinger (GHZ) states over all data qubits. By establishing high-fidelity operation across interconnected nuclear-spin registers, we realise a key milestone towards fault-tolerant quantum computation with atom processors.
△ Less
Submitted 4 June, 2025;
originally announced June 2025.
-
Noise Correlations in a 1D Silicon Spin Qubit Array
Authors:
M. B. Donnelly,
J. Rowlands,
L. Kranz,
Y. L. Hsueh,
Y. Chung,
A. V. Timofeev,
H. Geng,
P. Singh-Gregory,
S. K. Gorman,
J. G. Keizer,
R. Rahman,
M. Y. Simmons
Abstract:
Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors. The recent discovery of spatially dependent correlated noise in multi-qubit architectures of superconducting qubits arising from the impact of cosmic radiation and high-energy particles giving rise to quasiparticle poiso…
▽ More
Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors. The recent discovery of spatially dependent correlated noise in multi-qubit architectures of superconducting qubits arising from the impact of cosmic radiation and high-energy particles giving rise to quasiparticle poisoning within the substrate has led to intense investigations of mitigation strategies to address this. In contrast correlated noise in semiconductor spin qubits as a function of distance has not been reported to date. Here we report the magnitude, frequency and spatial dependence of noise correlations between four silicon quantum dot pairs as a function of inter-dot distance at frequencies from 0.3mHz to 1mHz. We find the magnitude of charge noise correlations, quantified by the magnitude square coherence $C_{xy}$, are significantly suppressed from $>0.5$ to $<0.1$ as the inter-dot distance increases from 75nm to 300nm. Using an analytical model we confirm that, in contrast to superconducting qubits, the dominant source of correlated noise arises from low frequency charge noise from the presence of two level fluctuators (TLFs) at the native silicon-silicon dioxide surface. Knowing this, we conclude with an important and timely discussion of charge noise mitigation strategies.
△ Less
Submitted 6 May, 2024;
originally announced May 2024.
-
Grover's algorithm in a four-qubit silicon processor above the fault-tolerant threshold
Authors:
Ian Thorvaldson,
Dean Poulos,
Christian M. Moehle,
Saiful H. Misha,
Hermann Edlbauer,
Jonathan Reiner,
Helen Geng,
Benoit Voisin,
Michael T. Jones,
Matthew B. Donnelly,
Luis F. Pena,
Charles D. Hill,
Casey R. Myers,
Joris G. Keizer,
Yousun Chung,
Samuel K. Gorman,
Ludwik Kranz,
Michelle Y. Simmons
Abstract:
Spin qubits in silicon are strong contenders for realizing a practical quantum computer. This technology has made remarkable progress with the demonstration of single and two-qubit gates above the fault-tolerant threshold and entanglement of up to three qubits. However, maintaining high fidelity operations while executing multi-qubit algorithms has remained elusive, only being achieved for two spi…
▽ More
Spin qubits in silicon are strong contenders for realizing a practical quantum computer. This technology has made remarkable progress with the demonstration of single and two-qubit gates above the fault-tolerant threshold and entanglement of up to three qubits. However, maintaining high fidelity operations while executing multi-qubit algorithms has remained elusive, only being achieved for two spin qubits to date due to the small qubit size, which makes it difficult to control qubits without creating crosstalk errors. Here, we use a four-qubit silicon processor with every operation above the fault tolerant limit and demonstrate Grover's algorithm with a ~95% probability of finding the marked state, one of the most successful implementations to date. Our four-qubit processor is made of three phosphorus atoms and one electron spin precision-patterned into 1.5 nm${}^2$ isotopically pure silicon. The strong resulting confinement potential, without additional confinement gates that can increase cross-talk, leverages the benefits of having both electron and phosphorus nuclear spins. Significantly, the all-to-all connectivity of the nuclear spins provided by the hyperfine interaction not only allows for efficient multi-qubit operations, but also provides individual qubit addressability. Together with the long coherence times of the nuclear and electron spins, this results in all four single qubit fidelities above 99.9% and controlled-Z gates between all pairs of nuclear spins above 99% fidelity. The high control fidelities, combined with >99% fidelity readout of all nuclear spins, allows for the creation of a three-qubit Greenberger-Horne-Zeilinger (GHZ) state with 96.2% fidelity, the highest reported for semiconductor spin qubits so far. Such nuclear spin registers can be coupled via electron exchange, establishing a path for larger scale fault-tolerant quantum processors.
△ Less
Submitted 2 March, 2025; v1 submitted 12 April, 2024;
originally announced April 2024.
-
Single-shot readout of multiple donor electron spins with a gate-based sensor
Authors:
Mark R. Hogg,
Prasanna Pakkiam,
Samuel K. Gorman,
Andrey V. Timofeev,
Yousun Chung,
Gurpreet K. Gulati,
Matthew G. House,
Michelle Y. Simmons
Abstract:
Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger qubit numbers integrating readout sensors into densely packed qubit chips is a critical challenge. Two promising approaches are minimising the footprint of the s…
▽ More
Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger qubit numbers integrating readout sensors into densely packed qubit chips is a critical challenge. Two promising approaches are minimising the footprint of the sensors, and extending the range of each sensor to read more qubits. Here we show high-fidelity single-shot electron spin readout using a nanoscale single-lead quantum dot (SLQD) sensor that is both compact and capable of reading multiple qubits. Our gate-based SLQD sensor is deployed in an all-epitaxial silicon donor spin qubit device, and we demonstrate single-shot readout of three $^{31}$P donor quantum dot electron spins with a maximum fidelity of 95%. Importantly in our device the quantum dot confinement potentials are provided inherently by the donors, removing the need for additional metallic confinement gates and resulting in strong capacitive interactions between sensor and donor quantum dots. We observe a $1/d^{1.4}$ scaling of the capacitive coupling between sensor and $^{31}$P dots (where $d$ is the sensor-dot distance), compared to $1/d^{2.5-3.0}$ in gate-defined quantum dot devices. Due to the small qubit size and strong capacitive interactions in all-epitaxial donor devices, we estimate a single sensor can achieve single-shot readout of approximately 15 qubits in a linear array, compared to 3-4 qubits for a similar sensor in a gate-defined quantum dot device. Our results highlight the potential for spin qubit devices with significantly reduced sensor densities.
△ Less
Submitted 17 March, 2022;
originally announced March 2022.
-
Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon
Authors:
F. N. Krauth,
S. K. Gorman,
Y. He,
M. T. Jones,
P. Macha,
S. Kocsis,
C. Chua,
B. Voisin,
S. Rogge,
R. Rahman,
Y. Chung,
M. Y. Simmons
Abstract:
Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flopping-mode electric dipole spin resonance qubit based on the combi…
▽ More
Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flopping-mode electric dipole spin resonance qubit based on the combined electron and nuclear spin states of a double phosphorus donor quantum dot. The key advantage of utilising a donor-based system is that we can engineer the number of donor nuclei in each quantum dot. By creating multi-donor dots with antiparallel nuclear spin states and multi-electron occupation we can minimise the longitudinal magnetic field gradient, known to couple charge noise into the device and dephase the qubit. We describe the operation of the qubit and show that by minimising the hyperfine interaction of the nuclear spins we can achieve $π/2-X$ gate error rates of $\sim 10^{-4}$ using realistic noise models. We highlight that the low charge noise environment in these all-epitaxial phosphorus-doped silicon qubits will facilitate the realisation of strong coupling of the qubit to superconducting microwave cavities allowing for long-distance two-qubit operations.
△ Less
Submitted 6 May, 2021;
originally announced May 2021.
-
Benchmarking high fidelity single-shot readout of semiconductor qubits
Authors:
D. Keith,
S. K. Gorman,
L. Kranz,
Y. He,
J. G. Keizer,
M. A. Broome,
M. Y. Simmons
Abstract:
Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper we present a full theoretical analysis of electronic single-shot readout and describe critical parameters to achieve high fidelity readout. In particular, we der…
▽ More
Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper we present a full theoretical analysis of electronic single-shot readout and describe critical parameters to achieve high fidelity readout. In particular, we derive a model for energy selective state readout based on a charge detector response and examine how to optimise the fidelity by choosing correct experimental parameters. Although we focus on single electron spin readout, the theory presented can be applied to other electronic readout techniques in semiconductors that use a reservoir.
△ Less
Submitted 25 February, 2019; v1 submitted 8 November, 2018;
originally announced November 2018.
-
Two-Electron Spin Correlations in Precision Placed Donors in Silicon
Authors:
M. A. Broome,
S. K. Gorman,
M. G. House,
S. J. Hile,
J. G. Keizer,
D. Keith,
C. D. Hill,
T. F. Watson,
W. J. Baker,
L. C. L. Hollenberg,
M. Y. Simmons
Abstract:
Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means…
▽ More
Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means of scanning tunnelling microscopy lithography. We measure anti-correlated spin states between two donor-based spin qubits in silicon separated by 16${\pm}1$ nm. By utilizing an asymmetric system with two phosphorus donors at one qubit site and one on the other (2P-1P), we demonstrate that the exchange interaction can be turned on and off via electrical control of two in-plane phosphorus doped detuning gates. We determine the tunnel coupling between the 2P-1P system to be 200 MHz and provide a roadmap for the observation of two-electron coherent exchange oscillations.
△ Less
Submitted 26 July, 2018;
originally announced July 2018.
-
Addressable electron spin resonance using donors and donor molecules in silicon
Authors:
Samuel J. Hile,
Lukas Fricke,
Matthew G. House,
Eldad Peretz,
Chin Yi Chen,
Yu Wang,
Matthew Broome,
Samuel K. Gorman,
Joris G. Keizer,
Rajib Rahman,
Michelle Y. Simmons
Abstract:
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donor qubits with separations ~15nm is challenging. Here we show that by using atomic-precision lithography we can place a single P donor next to a 2P molecule 16(+/-1)nm apart…
▽ More
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donor qubits with separations ~15nm is challenging. Here we show that by using atomic-precision lithography we can place a single P donor next to a 2P molecule 16(+/-1)nm apart and use their distinctive hyperfine coupling strengths to address qubits at vastly different resonance frequencies. In particular the single donor yields two hyperfine peaks separated by 97(+/-2.5)MHz, in contrast to the donor molecule which exhibits three peaks separated by 262(+/-10)MHz. Atomistic tight-binding simulations confirm the large hyperfine interaction strength in the 2P molecule with an inter-donor separation of ~0.7nm, consistent with lithographic STM images of the 2P site during device fabrication. We discuss the viability of using donor molecules for built-in addressability of electron spin qubits in silicon.
△ Less
Submitted 26 July, 2018;
originally announced July 2018.
-
Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot
Authors:
S. K. Gorman,
M. A. Broome,
M. G. House,
S. J. Hile,
J. G. Keizer,
D. Keith,
T. F. Watson,
W. J. Baker,
M. Y. Simmons
Abstract:
We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by $16{\pm}1$ nm. We identify singlet and triplet-minus states by performing sequential independent spin readout of the two electron system and probe its dependence on magnetic field strength. The relaxation of singlet and triplet states are measured to be $12.4{\pm}1.0$ s…
▽ More
We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by $16{\pm}1$ nm. We identify singlet and triplet-minus states by performing sequential independent spin readout of the two electron system and probe its dependence on magnetic field strength. The relaxation of singlet and triplet states are measured to be $12.4{\pm}1.0$ s and $22.1{\pm}1.0$ s respectively at $B_z{=}2.5$ T.
△ Less
Submitted 26 July, 2018;
originally announced July 2018.
-
High Fidelity Single-Shot Singlet-Triplet Readout of Precision Placed Donors in Silicon
Authors:
M. A. Broome,
T. F. Watson,
D. Keith,
S. K. Gorman,
M. G. House,
J. G. Keizer,
S. J. Hile,
W. Baker,
M. Y. Simmons
Abstract:
In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4$\pm$0.2%. We measure the triplet-minus relaxation time to…
▽ More
In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4$\pm$0.2%. We measure the triplet-minus relaxation time to be of the order 3s at 2.5T and observe its predicted decrease as a function of magnetic field, reaching 0.5s at 1T.
△ Less
Submitted 26 July, 2018;
originally announced July 2018.
-
Tunneling statistics for analysis of spin-readout fidelity
Authors:
Samuel K. Gorman,
Yu He,
Matthew G. House,
Joris G. Keizer,
Daniel Keith,
Lukas Fricke,
Samuel J. Hile,
Matthew A. Broome,
Michelle Y. Simmons
Abstract:
We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field w…
▽ More
We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field where spin-readout is possible. We then show how such a measurement can be used to investigate and optimise single electron spin-readout fidelity.
△ Less
Submitted 5 October, 2017;
originally announced October 2017.
-
Mapping the Chemical Potential Landscape of a Triple Quantum Dot
Authors:
M. A. Broome,
S. K. Gorman,
J. G. Keizer,
T. F. Watson,
S. J. Hile,
W. J. Baker,
M. Y. Simmons
Abstract:
We investigate the non-equilibrium charge dynamics of a triple quantum dot and demonstrate how electron transport through these systems can give rise to non-trivial tunnelling paths. Using a real-time charge sensing method we establish tunnelling pathways taken by particular electrons under well-defined electrostatic configurations. We show how these measurements map to the chemical potentials for…
▽ More
We investigate the non-equilibrium charge dynamics of a triple quantum dot and demonstrate how electron transport through these systems can give rise to non-trivial tunnelling paths. Using a real-time charge sensing method we establish tunnelling pathways taken by particular electrons under well-defined electrostatic configurations. We show how these measurements map to the chemical potentials for different charge states across the system. We use a modified Hubbard Hamiltonian to describe the system dynamics and show that it reproduces all experimental observations.
△ Less
Submitted 12 September, 2016;
originally announced September 2016.
-
Extracting inter-dot tunnel couplings between few donor quantum dots in silicon
Authors:
Samuel K. Gorman,
Matthew A. Broome,
Joris G. Keizer,
Thomas F. Watson,
Samuel J. Hile,
William J. Baker,
Michelle Y. Simmons
Abstract:
The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, $t_c$. Here, we describe a method to extract the $t_c$ between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on…
▽ More
The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, $t_c$. Here, we describe a method to extract the $t_c$ between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. We extract ${t}_{\rm{c}}=5.5\pm 1.8\;{\rm{GHz}}$ and ${t}_{\rm{c}}=2.2\pm 1.3\;{\rm{GHz}}$ between each of the nearest-neighbour QDs which are separated by 14.5 nm and 14.0 nm, respectively. The technique allows for an accurate measurement of $t_c$ for nanoscale devices even when it is smaller than the electron temperature and is an ideal characterisation tool for multi-dot systems with a charge sensor.
△ Less
Submitted 5 June, 2016; v1 submitted 2 June, 2016;
originally announced June 2016.
-
The impact of nuclear spin dynamics on electron transport through donors
Authors:
Samuel K. Gorman,
Matthew A. Broome,
William J. Baker,
Michelle Y. Simmons
Abstract:
We present an analysis of electron transport through two weakly coupled precision placed phosphorus donors in silicon. In particular, we examine the (1,1) to (0,2) charge transition where we predict a new type of current blockade driven entirely by the nuclear spin dynamics. Using this nuclear spin blockade mechanism we devise a protocol to readout the state of single nuclear spins using electron…
▽ More
We present an analysis of electron transport through two weakly coupled precision placed phosphorus donors in silicon. In particular, we examine the (1,1) to (0,2) charge transition where we predict a new type of current blockade driven entirely by the nuclear spin dynamics. Using this nuclear spin blockade mechanism we devise a protocol to readout the state of single nuclear spins using electron transport measurements only. We extend our model to include realistic effects such as Stark shifted hyperfine interactions and multi-donor clusters. In the case of multi-donor clusters we show how nuclear spin blockade can be alleviated allowing for low magnetic field electron spin measurements.
△ Less
Submitted 17 September, 2015;
originally announced September 2015.
