Showing 1–5 of 5 results for author: Goodman, A J

Suppressing Diffusion-Mediated Exciton Annihilation in 2D Semiconductors Using the Dielectric Environment

Authors: Aaron J. Goodman, Der-Hsien Lien, Geun Ho Ahn, Leo L. Spiegel, Matin Amani, Adam P. Willard, Ali Javey, William A. Tisdale

Abstract: Atomically thin semiconductors such as monolayer MoS2 and WS2 exhibit nonlinear exciton-exciton annihilation at notably low excitation densities (below ~10 excitons/um2 in MoS2). Here, we show that the density threshold at which annihilation occurs can be tuned by changing the underlying substrate. When the supporting substrate is changed from SiO2 to Al2O3 or SrTiO3, the rate constant for second-… ▽ More Atomically thin semiconductors such as monolayer MoS2 and WS2 exhibit nonlinear exciton-exciton annihilation at notably low excitation densities (below ~10 excitons/um2 in MoS2). Here, we show that the density threshold at which annihilation occurs can be tuned by changing the underlying substrate. When the supporting substrate is changed from SiO2 to Al2O3 or SrTiO3, the rate constant for second-order exciton-exciton annihilation, k_XX [cm2/s], is reduced by one or two orders of magnitude, respectively. Using transient photoluminescence microscopy, we measure the effective room-temperature exciton diffusion coefficient in chemical-treated MoS2 to be D = 0.06 +/- 0.01 cm2/s, corresponding to a diffusion length of LD = 350 nm for an exciton lifetime of τ = 20 ns, which is independent of the substrate. These results, together with numerical simulations, suggest that the effective exciton-exciton annihilation radius monotonically decreases with increasing refractive index of the underlying substrate. Exciton-exciton annihilation limits the overall efficiency of 2D semiconductor devices operating at high exciton densities; the ability to tune these interactions via the dielectric environment is an important step toward more efficient optoelectronic technologies featuring atomically thin materials. △ Less

Submitted 2 November, 2018; originally announced November 2018.

Ultrafast Charge Transfer at a Quantum Dot/2D Materials Interface Probed by Second Harmonic Generation

Authors: Aaron J. Goodman, Nabeel S. Dahod, William A. Tisdale

Abstract: Hybrid quantum dot (QD) / transition metal dichalcogenide (TMD) heterostructures are attractive components of next generation optoelectronic devices, which take advantage of the spectral tunability of QDs and the charge and exciton transport properties of TMDs. Here, we demonstrate tunable electronic coupling between CdSe QDs and monolayer WS$_2$ using variable length alkanethiol ligands on the QD… ▽ More Hybrid quantum dot (QD) / transition metal dichalcogenide (TMD) heterostructures are attractive components of next generation optoelectronic devices, which take advantage of the spectral tunability of QDs and the charge and exciton transport properties of TMDs. Here, we demonstrate tunable electronic coupling between CdSe QDs and monolayer WS$_2$ using variable length alkanethiol ligands on the QD surface. Using femtosecond time-resolved second harmonic generation (SHG) microscopy, we show that electron transfer from photoexcited CdSe QDs to single-layer WS$_2$ occurs on ultrafast (50 fs - 1 ps) timescales. Moreover, in the samples exhibiting the fastest charge transfer rates ($\leq$ 50 fs) we observed oscillations in the time-domain signal corresponding to an acoustic phonon mode of the donor QD, which coherently modulates the SHG response of the underlying WS$_2$ layer. These results reveal surprisingly strong electronic coupling at the QD/TMD interface and demonstrate the usefulness of time-resolved SHG for exploring ultrafast electronic-vibrational dynamics in TMD heterostructures. △ Less

Submitted 10 June, 2018; originally announced June 2018.

Journal ref: J. Phys. Chem. Lett. 9 (2018), 4227-4232

Phase-Modulated Degenerate Parametric Amplification Microscopy

Authors: Yunan Gao, Aaron J. Goodman, Pin-Chun Shen, Jing Kong, William A. Tisdale

Abstract: Second-order nonlinear optical interactions, including second harmonic generation (SHG) and sum-frequency generation (SFG), can reveal a wealth of information about chemical, electronic, and vibrational dynamics at the nanoscale. Here, we demonstrate a powerful and flexible new approach, called phase-modulated degenerate parametric amplification (DPA). The technique, which allows for facile retrie… ▽ More Second-order nonlinear optical interactions, including second harmonic generation (SHG) and sum-frequency generation (SFG), can reveal a wealth of information about chemical, electronic, and vibrational dynamics at the nanoscale. Here, we demonstrate a powerful and flexible new approach, called phase-modulated degenerate parametric amplification (DPA). The technique, which allows for facile retrieval of both the amplitude and phase of the second-order nonlinear optical response, has many advantages over conventional or heterodyne-detected SHG, including the flexibility to detect the signal at either the second harmonic or fundamental field wavelength. We demonstrate the capabilities of this approach by imaging multi-grain flakes of single-layer MoS2. We identify the absolute crystal orientation of each MoS2 domain and resolve grain boundaries with high signal contrast and sub-diffraction-limited spatial resolution. This robust all-optical method can be used to characterize structure and dynamics in organic and inorganic systems, including biological tissue, soft materials, and metal and semiconductor nanostructures, and is particularly well-suited for imaging in media that are absorptive or highly scattering to visible and ultraviolet light. △ Less

Submitted 9 June, 2018; originally announced June 2018.

Journal ref: Nano Letters (2018)

Exciton Trapping Is Responsible for the Long Apparent Lifetime in Acid-Treated MoS2

Authors: Aaron J. Goodman, Adam P. Willard, William A. Tisdale

Abstract: Here, we show that deep trapped "dark" exciton states are responsible for the surprisingly long lifetime of band-edge photoluminescence in acid-treated single-layer MoS2. Temperature-dependent transient photoluminescence spectroscopy reveals an exponential tail of long-lived states extending hundreds of meV into the band gap. These sub-band states, which are characterized by a 4 microsecond radiat… ▽ More Here, we show that deep trapped "dark" exciton states are responsible for the surprisingly long lifetime of band-edge photoluminescence in acid-treated single-layer MoS2. Temperature-dependent transient photoluminescence spectroscopy reveals an exponential tail of long-lived states extending hundreds of meV into the band gap. These sub-band states, which are characterized by a 4 microsecond radiative lifetime, quickly capture and store photogenerated excitons before subsequent thermalization up to the band edge where fast radiative recombination occurs. By intentionally saturating these trap states, we are able to measure the "true" 150 ps radiative lifetime of the band-edge exciton at 77 K, which extrapolates to ~600 ps at room temperature. These experiments reveal the dominant role of dark exciton states in acid-treated MoS2, and suggest that excitons spend > 95% of their lifetime at room temperature in trap states below the band edge. We hypothesize that these states are associated with native structural defects, which are not introduced by the superacid treatment; rather, the superacid treatment dramatically reduces non-radiative recombination through these states, extending the exciton lifetime and increasing the likelihood of eventual radiative recombination. △ Less

Submitted 24 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. B 96, 121404 (2017)

Reduced dielectric screening and enhanced energy transfer in single and few-layer MoS2

Authors: Ferry Prins, Aaron J. Goodman, William A. Tisdale

Abstract: We report highly efficient non-radiative energy transfer from cadmium selenide (CdSe) quantum dots to monolayer and few-layer molybdenum disulfide (MoS2). The quenching of the donor quantum dot photoluminescence increases as the MoS2 flake thickness decreases, with the highest efficiency (>95%) observed for monolayer MoS2. This counterintuitive result arises from reduced dielectric screening in th… ▽ More We report highly efficient non-radiative energy transfer from cadmium selenide (CdSe) quantum dots to monolayer and few-layer molybdenum disulfide (MoS2). The quenching of the donor quantum dot photoluminescence increases as the MoS2 flake thickness decreases, with the highest efficiency (>95%) observed for monolayer MoS2. This counterintuitive result arises from reduced dielectric screening in thin layer semiconductors having unusually large permittivity and a strong in-plane transition dipole moment, as found in MoS2. Excitonic energy transfer between a 0D emitter and a 2D absorber is fundamentally interesting and enables a wide range of applications including broadband optical down-conversion, optical detection, photovoltaic sensitization, and color shifting in light-emitting devices. △ Less

Submitted 7 August, 2014; originally announced August 2014.

Comments: 14 pages, 4 figures

Journal ref: Nano Lett., vol. 14, pp. 6087-6091 (2014)