Planar Hall effect in type-II Weyl semimetal WTe2
Authors:
Y. J. Wang,
J. X. Gong,
D. D. Liang,
M. Ge,
J. R. Wang,
W. K. Zhu,
C. J. Zhang
Abstract:
Adler-Bell-Jackiw chiral anomaly is a representative feature arising from the topological nature in topological semimetal. We report the first experimental observation of giant planar Hall effect in type-II Weyl semimetal WTe2. Our comprehensive analyes of the experimental data demonstrate that the detected planar Hall effect is originated from the chiral anomaly of Weyl fermions. Unlike the somew…
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Adler-Bell-Jackiw chiral anomaly is a representative feature arising from the topological nature in topological semimetal. We report the first experimental observation of giant planar Hall effect in type-II Weyl semimetal WTe2. Our comprehensive analyes of the experimental data demonstrate that the detected planar Hall effect is originated from the chiral anomaly of Weyl fermions. Unlike the somewhat elusive negative magnetoresistance, the planar Hall effect is robust and easy to be detected in type-II Weyl semimetal. This work reveals that the planar Hall effect is an effective transport probe to determine the topological nature of topological semimetals, especially in type-II Weyl semimetals.
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Submitted 21 January, 2018; v1 submitted 17 January, 2018;
originally announced January 2018.
Non-stoichiometry effects on the extreme magnetoresistance in Weyl semimetal WTe2
Authors:
J. X. Gong,
J. Yang,
M. Ge,
Y. J. Wang,
D. D. Liang,
L. Luo,
X. Yan,
W. L. Zhen,
S. R. Weng,
L. Pi,
C. J. Zhang,
W. K. Zhu
Abstract:
Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fittings to a two-carrier model show that the magnetoresistance is strongly dependent on the residual resi…
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Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fittings to a two-carrier model show that the magnetoresistance is strongly dependent on the residual resistivity ratio (i.e., the degree of non-stoichiometry), which is eventually understood in terms of electron doping which not only breaks the balance between electron-type and hole-type carrier densities but also reduces the average carrier mobility. Thus, compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.
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Submitted 29 April, 2018; v1 submitted 29 December, 2017;
originally announced December 2017.
