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A silicon spin vacuum: isotopically enriched $^{28}$silicon-on-insulator and $^{28}$silicon from ultra-high fluence ion implantation
Authors:
Shao Qi Lim,
Brett C. Johnson,
Sergey Rubanov,
Nico Klingner,
Bin Gong,
Alexander M. Jakob,
Danielle Holmes,
David N. Jamieson,
Jim S. Williams,
Jeffrey C. McCallum
Abstract:
Isotopically enriched silicon (Si) can greatly enhance qubit coherence times by minimizing naturally occurring $^{29}$Si which has a non-zero nuclear spin. Ultra-high fluence $^{28}$Si ion implantation of bulk natural Si substrates was recently demonstrated as an attractive technique to ultra-high $^{28}$Si isotopic purity. In this work, we apply this $^{28}$Si enrichment process to produce…
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Isotopically enriched silicon (Si) can greatly enhance qubit coherence times by minimizing naturally occurring $^{29}$Si which has a non-zero nuclear spin. Ultra-high fluence $^{28}$Si ion implantation of bulk natural Si substrates was recently demonstrated as an attractive technique to ultra-high $^{28}$Si isotopic purity. In this work, we apply this $^{28}$Si enrichment process to produce $^{28}$Si and $^{28}$Si-on-insulator (SOI) samples. Experimentally, we produced a $^{28}$Si sample on natural Si substrate with $^{29}$Si depleted to 7~ppm (limited by measurement noise floor), that is at least 100 nm thick. This is achieved with an ion energy that results in a sputter yield of less than one and an ultra-high ion fluence, as supported by our improved computational model that is based on fitting a large number of experiments. Further, our model predicts the $^{29}$Si and $^{30}$Si depletion in our sample to be less than 1~ppm. In the case of SOI, ion implantation conditions are found to be more stringent than those of bulk natural Si in terms of minimizing threading dislocations upon subsequent solid phase epitaxy annealing. Finally, we do not observe open volume defects in our $^{28}$SOI and $^{28}$Si samples after SPE annealing (620°C, 10 minutes).
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Submitted 18 May, 2025; v1 submitted 4 April, 2025;
originally announced April 2025.
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Interfacial superconductivity in the type-III heterostructure SnSe$_2$/PtTe$_2$
Authors:
Jun Fan,
Xiao-Le Qiu,
Zhong-Yi Lu,
Kai Liu,
Ben-Chao Gong
Abstract:
Interfacial superconductivity (IS) has been a topic of intense interest in the condensed matter physics, due to its unique properties and exotic photoelectrical performance. However, there are few reports about IS systems consisting of two insulators. Here, motivated by the emergence of an insulator-metal transition in the type-III heterostructure and the superconductivity in the some "special" tw…
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Interfacial superconductivity (IS) has been a topic of intense interest in the condensed matter physics, due to its unique properties and exotic photoelectrical performance. However, there are few reports about IS systems consisting of two insulators. Here, motivated by the emergence of an insulator-metal transition in the type-III heterostructure and the superconductivity in the some "special" two-dimensional (2D) semiconductors via the electron doping, we predict that 2D heterostructure SnSe$_2$/PtTe$_2$ is a model system for realizing the IS by using first-principles calculations. Our results show that due to the slight but crucial interlayer charge transfer, SnSe$_2$/PtTe$_2$ turns to be a type-III heterostructure with metallic properties and shows a superconducting transition with the critical temperature ($T_\text{c}$) of 3.73 K. Similar to the enhance electron-phonon coupling (EPC) in the electron doped SnSe$_2$ monolayer, the IS in the heterostructure SnSe$_2$/PtTe$_2$ mainly originates from the metallized SnSe$_2$ layer. Furthermore, we find that the superconductivity is sensitive to the tensile lattice strain, forming a dome-shaped superconducting phase diagram. Remarkably, at the 7\% tensile strain, the superconducting $T_\text{c}$ can increase more than twofold (8.80 K), resulting from the softened acoustic phonon at the M point and the enhanced EPC strength. Our study provides a concrete example for realizing IS in the type-III heterosturcture, which waits for future experimental verification.
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Submitted 19 February, 2025;
originally announced February 2025.
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Exploring charge and spin fluctuations in infinite-layer cuprate SrCuO$_{2}$ from a phonon perspective
Authors:
Xin Du,
Pei-Han Sun,
Ben-Chao Gong,
Jian-Feng Zhang,
Zhong-Yi Lu,
Kai Liu
Abstract:
The infinite-layer cuprate $A$CuO$_2$ ($A=$ Ca, Sr, Ba) has the simplest crystal structure among numerous cuprate superconductors and can serve a prototypical system to explore the unconventional superconductivity. Based on the first-principles electronic structure calculations, we have studied the electronic and magnetic properties of the infinite-layer cuprate SrCuO$_{2}$ from a phonon perspecti…
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The infinite-layer cuprate $A$CuO$_2$ ($A=$ Ca, Sr, Ba) has the simplest crystal structure among numerous cuprate superconductors and can serve a prototypical system to explore the unconventional superconductivity. Based on the first-principles electronic structure calculations, we have studied the electronic and magnetic properties of the infinite-layer cuprate SrCuO$_{2}$ from a phonon perspective. We find that interesting fluctuations of charges, electrical dipoles, and local magnetic moments can be induced by the zero-point vibrations of phonon modes in SrCuO$_{2}$ upon the hole doping. Among all optical phonon modes of SrCuO$_{2}$ in the antiferromagnetic Néel state, only the $A_{1}$$_g$ mode that involves the full-breathing O vibrations along the Cu-O bonds can cause significant fluctuations of local magnetic moments on O atoms and dramatic charge redistributions between Cu and O atoms. Notably, due to the zero-point vibration of the $A_{1g}$ mode, both the charge fluctuations on Cu and the electrical dipoles on O show a dome-like evolution with increasing hole doping, quite similar to the experimentally observed behavior of the superconducting $T_c$; in comparison, the fluctuations of local magnetic moments on O display a monotonic enhancement along with the hole doping. Further analyses indicate that around the optimal doping, there exist a large softening in the frequency of the $A_{1g}$ phonon mode and a van Hove singularity in the electronic structure close to the Fermi level, suggesting potential electron-phonon coupling. Our work reveals the important role of the full-breathing O phonon mode playing in the infinite-layer SrCuO$_{2}$, which may provide new insights in understanding the cuprate superconductivity.
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Submitted 16 June, 2023;
originally announced June 2023.
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Intrinsic ferromagnetic axion states and a single pair of Weyl fermions in the stable-state Mn\emph{X}$_{2}$\emph{B}$_{2}$\emph{T}$_{6}$-family materials
Authors:
Yan Gao,
Weikang Wu,
Ben-Chao Gong,
Huan-Cheng Yang,
Xiang-Feng Zhou,
Yong Liu,
Shengyuan A. Yang,
Kai Liu,
Zhong-Yi Lu
Abstract:
The intrinsic ferromagnetic (FM) axion insulators and Weyl semimetals (WSMs) with only single pair of Weyl points have drawn intensive attention but so far remain rare and elusive in real materials. Here, we propose a new class of Mn\emph{X}$_{2}$\emph{B}$_{2}$\emph{T}$_{6}$-B (\emph{X}=Ge, Sn, or Pb; \emph{B}=Sb or Bi; \emph{T}=Se or Te) family that is the stable structural form of this system. W…
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The intrinsic ferromagnetic (FM) axion insulators and Weyl semimetals (WSMs) with only single pair of Weyl points have drawn intensive attention but so far remain rare and elusive in real materials. Here, we propose a new class of Mn\emph{X}$_{2}$\emph{B}$_{2}$\emph{T}$_{6}$-B (\emph{X}=Ge, Sn, or Pb; \emph{B}=Sb or Bi; \emph{T}=Se or Te) family that is the stable structural form of this system. We find that the Mn\emph{X}$_{2}$\emph{B}$_{2}$\emph{T}$_{6}$-B family has not only the intrinsic FM axion insulators MnGe$_{2}$Bi$_{2}$Te$_{6}$-B, MnSn$_{2}$Bi$_{2}$Te$_{6}$-B, and MnPb$_{2}$Bi$_{2}$Te$_{6}$-B, but also the intrinsic WSM MnSn$_{2}$Sb$_{2}$Te$_{6}$-B with only a single pair of Weyl points. Thus, the Mn\emph{X}$_{2}$\emph{B}$_{2}$\emph{T}$_{6}$-B family can provide an ideal platform to explore the exotic topological magnetoelectric effect and the intrinsic properties related to Weyl points.
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Submitted 17 October, 2022;
originally announced October 2022.
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Emergent superconductivity in van der Waals Kagome material Pd3P2S8 under high pressure
Authors:
Qi Wang,
Xiaole Qiu,
Cuiying Pei,
Benchao Gong,
Lingling Gao,
Yi Zhao,
Weizheng Cao,
Changhua Li,
Shihao Zhu,
Mingxin Zhang,
Yulin Chen,
Kai Liu,
Yanpeng Qi
Abstract:
Kagome lattice systems have been proposed to host rich physics, which provide an excellent platform to explore unusual quantum states. Here, we report on the discovery of superconductivity in van der Waals material Pd3P2S8 under pressure. The superconductivity is observed in Pd3P2S8 for those pressures where the temperature dependence of the resistivity changes from a semiconducting-like behavior…
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Kagome lattice systems have been proposed to host rich physics, which provide an excellent platform to explore unusual quantum states. Here, we report on the discovery of superconductivity in van der Waals material Pd3P2S8 under pressure. The superconductivity is observed in Pd3P2S8 for those pressures where the temperature dependence of the resistivity changes from a semiconducting-like behavior to that of a normal metal. The superconducting transition temperature Tc increases with applied pressure and reaches ~ 6.83 K at 79.5 GPa. Combining high-pressure XRD, Raman spectroscopy and theoretical calculations, our results demonstrate that the observed superconductivity induced by high pressure in Pd3P2S8 is closely related to the formation of amorphous phase, which results from the structural instability due to the enhanced coupling between interlayer Pd and S atoms upon compression.
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Submitted 11 April, 2022;
originally announced April 2022.
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Evolution of ultra-flat band in van der Waals kagome semiconductor Pd$_{3}$P$_{2}$(S$_{1-x}$Se$_{x}$)$_{8}$
Authors:
Shaohua Yan,
Ben-Chao Gong,
Lin Wang,
Jinzhi Wu,
Qiangwei Yin,
Xinyu Cao,
Xiao Zhang,
Xiaofeng Liu,
Zhong-Yi Lu,
Kai Liu,
Hechang Lei
Abstract:
We investigate the evolutions of structural parameters, optical properties, and electronic structures of a van der Waals kagome semiconductor Pd$_{3}$P$_{2}$S$_{8}$ with Se doping. When the doping level of Se increases, the bandgaps of Pd$_{3}$P$_{2}$(S$_{1-x}$Se$_{x}$)$_{8}$ single crystals decrease gradually, accompanying with the expanded unit cells. The first-principles calculations show that…
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We investigate the evolutions of structural parameters, optical properties, and electronic structures of a van der Waals kagome semiconductor Pd$_{3}$P$_{2}$S$_{8}$ with Se doping. When the doping level of Se increases, the bandgaps of Pd$_{3}$P$_{2}$(S$_{1-x}$Se$_{x}$)$_{8}$ single crystals decrease gradually, accompanying with the expanded unit cells. The first-principles calculations show that there is a flat band (FB) near the Fermi level in bulk Pd$_{3}$P$_{2}$S$_{8}$. This FB mainly originates from the $d_{z^2}$-like orbitals of Pd atoms in the Pd kagome lattice, which have a finite interlayer electron hopping perpendicular to the PdS$_4$ square plane. The interlayer hopping can be reinforced with Se doping, inducing a stronger interlayer coupling via the chalcogen atoms at apical sites, which reduces the bandgap and enhances the cleavage energy. In contrast, the varnishing interlayer hopping in the two-dimensional limit results in the formation of ultra-FB in the monolayers of these compounds. The easy exfoliation and the existence of unique ultra-FB near $E_{\rm F}$ make Pd$_{3}$P$_{2}$(S$_{1-x}$Se$_{x}$)$_{8}$ a model system to explore the exotic physics of FB in 2D kagome lattice.
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Submitted 22 November, 2021;
originally announced November 2021.
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LaO as a candidate substrate for realizing superconductivity in FeSe epitaxial film
Authors:
Xiao-Le Qiu,
Ben-Chao Gong,
Huan-Cheng Yang,
Zhong-Yi Lu,
Kai Liu
Abstract:
The significantly enhanced superconducting transition temperature ($T_c$) of an FeSe monolayer on SrTiO$_3$(001) substrate has attracted extensive attention in recent years. Here, based on first-principles electronic structure calculations, we propose another candidate substrate LaO(001) for the epitaxial growth of FeSe monolayer to realize superconductivity. Our calculations show that for the opt…
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The significantly enhanced superconducting transition temperature ($T_c$) of an FeSe monolayer on SrTiO$_3$(001) substrate has attracted extensive attention in recent years. Here, based on first-principles electronic structure calculations, we propose another candidate substrate LaO(001) for the epitaxial growth of FeSe monolayer to realize superconductivity. Our calculations show that for the optimal adsorption structure of FeSe monolayer on LaO(001), the stripe antiferromagnetic state and the dimer antiferromagnetic state are almost energetically degenerate, indicating the existence of strong magnetic fluctuation that is beneficial to the appearance of superconductivity. According to the Bader charge analysis, the calculated electron doping from the LaO substrate to the FeSe monolayer is about 0.18 electrons per Fe atom, even larger than that in case of FeSe/SrTiO$_3$(001). Since LaO was also reported to be a superconductor with $T_c$ ~ 5 K, it may have a superconducting proximity effect on the epitaxial FeSe film and vice versa. These results suggest that LaO would be an interesting substrate to study the interface-related superconductivity.
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Submitted 23 June, 2021;
originally announced June 2021.
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Theoretical design of all-carbon networks with intrinsic magnetism
Authors:
Yan Gao,
Xiaolong Feng,
Ben-Chao Gong,
Chengyong Zhong,
Shengyuan A. Yang,
Kai Liu,
Zhong-Yi Lu
Abstract:
To induce intrinsic magnetism in the nominally nonmagnetic carbon materials containing only $s$ and $p$ electrons is an intriguing yet challenging task. Here, based on first-principles electronic structure calculations, we propose a universal approach inspired by Ovchinnikov's rule to guide us the design of a series of imaginative magnetic all-carbon structures. The idea is to combine the differen…
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To induce intrinsic magnetism in the nominally nonmagnetic carbon materials containing only $s$ and $p$ electrons is an intriguing yet challenging task. Here, based on first-principles electronic structure calculations, we propose a universal approach inspired by Ovchinnikov's rule to guide us the design of a series of imaginative magnetic all-carbon structures. The idea is to combine the differently stacked graphene layers via the acetylenic linkages (-C$\equiv$C-) to obtain a class of two-dimensional (2D) and three-dimensional (3D) carbon networks. With first-principles electronic structure calculations, we confirm the effectiveness of this approach via concrete examples of double-layer ALBG-C14, triple-layer ALTG-C22, and bulk IALG-C30. We show that these materials are antiferromagnetic (AFM) semiconductors with intralayer Néel and interlayer AFM couplings. According to the above idea, our work not only provides a promising design scheme for magnetic all-carbon materials, but also can apply to other $π$-bonding network systems.
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Submitted 23 June, 2021;
originally announced June 2021.
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Ionic liquid gating induced two superconductor-insulator phase transitions in spinel oxide Li$_{1 \pm x}$Ti$_2$O$_{4-δ}$
Authors:
Zhongxu Wei,
Qian Li,
Ben-Chao Gong,
Xinjian Wei,
Wei Hu,
Zhuang Ni,
Ge He,
Mingyang Qin,
Anna Kusmartseva,
Fedor V. Kusmartsev,
Jie Yuan,
Beiyi Zhu,
Qihong Chen,
Jian-Hao Chen,
Kai Liu,
Kui Jin
Abstract:
The associations between emergent physical phenomena (e.g., superconductivity) and orbital, charge, and spin degrees of freedom of $3d$ electrons are intriguing in transition metal compounds. Here, we successfully manipulate the superconductivity of spinel oxide Li$_{1\pm x}$Ti$_2$O$_{4-δ}$ (LTO) by ionic liquid gating. A dome-shaped superconducting phase diagram is established, where two insulati…
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The associations between emergent physical phenomena (e.g., superconductivity) and orbital, charge, and spin degrees of freedom of $3d$ electrons are intriguing in transition metal compounds. Here, we successfully manipulate the superconductivity of spinel oxide Li$_{1\pm x}$Ti$_2$O$_{4-δ}$ (LTO) by ionic liquid gating. A dome-shaped superconducting phase diagram is established, where two insulating phases are disclosed both in heavily electron-doping and hole-doping regions. The superconductor-insulator transition (SIT) in the hole-doping region can be attributed to the loss of Ti valence electrons. In the electron-doping region, LTO exhibits an unexpected SIT instead of a metallic behavior despite an increase in carrier density. Furthermore, a thermal hysteresis is observed in the normal state resistance curve, suggesting a first-order phase transition. We speculate that the SIT and the thermal hysteresis stem from the enhanced $3d$ electron correlations and the formation of orbital ordering by comparing the transport and structural results of LTO with the other spinel oxide superconductor MgTi$_2$O$_4$, as well as analysing the electronic structure by first-principles calculations. Further comprehension of the detailed interplay between superconductivity and orbital ordering would contribute to the revealing of unconventional superconducting pairing mechanism.
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Submitted 8 April, 2021; v1 submitted 10 January, 2021;
originally announced January 2021.
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Emergent superconductivity in single crystalline $\mathrm{MgTi}_2\mathrm{O}_4$ films via structural engineering
Authors:
Wei Hu,
Zhongpei Feng,
Ben-Chao Gong,
Ge He,
Dong Li,
Mingyang Qin,
Yujun Shi,
Qian Li,
Qinghua Zhang,
Jie Yuan,
Beiyi Zhu,
Kai Liu,
Tao Xiang,
Lin Gu,
Fang Zhou,
Xiaoli Dong,
Zhongxian Zhao,
Kui Jin
Abstract:
Spinel compounds have demonstrated rich functionalities but rarely shown superconductivity. Here, we report the emergence of superconductivity in the spinel $\mathrm{MgTi}_2\mathrm{O}_4$, known to be an insulator with a complicated order. The superconducting transition is achieved by engineering a superlattice of $\mathrm{MgTi}_2\mathrm{O}_4$ and $\mathrm{SrTiO}_3$. The onset transition temperatur…
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Spinel compounds have demonstrated rich functionalities but rarely shown superconductivity. Here, we report the emergence of superconductivity in the spinel $\mathrm{MgTi}_2\mathrm{O}_4$, known to be an insulator with a complicated order. The superconducting transition is achieved by engineering a superlattice of $\mathrm{MgTi}_2\mathrm{O}_4$ and $\mathrm{SrTiO}_3$. The onset transition temperature in the $\mathrm{MgTi}_2\mathrm{O}_4$ layer can be tuned from 0 to 5 K in such geometry, concurrently with a stretched $c$-axis (from 8.51 to 8.53 Å) compared to the bulk material. Such a positive correlation without saturation suggests ample room for the further enhancement. Intriguingly, the superlattice exhibits isotropic upper critical field $H_{\mathrm{c}2}$ that breaks the Pauli limit, distinct from the highly anisotropic feature of interface superconductivity. The origin of superconductivity in the $\mathrm{MgTi}_2\mathrm{O}_4$ layer is understood in combination with the electron energy loss spectra and the first-principles electronic structure calculations, which point to the birth of superconductivity in the $\mathrm{MgTi}_2\mathrm{O}_4$ layer by preventing the Ti-Ti dimerization. Our discovery not only provides a platform to explore the interplay between the superconductivity and other exotic states, but also opens a new window to realize superconductivity in the spinel compounds as well as other titanium oxides.
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Submitted 30 May, 2019; v1 submitted 21 May, 2019;
originally announced May 2019.
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Magnetic exchange induced Weyl state in a semimetal EuCd2Sb2
Authors:
Hao Su,
Benchao Gong,
Wujun Shi,
Haifeng Yang,
Hongyuan Wang,
Wei Xia,
Zhenhai Yu,
Peng-Jie Guo,
Jinhua Wang,
Linchao Ding,
Liangcai Xu,
Xiaokang Li,
Xia Wang,
Zhiqiang Zou,
Na Yu,
Zengwei Zhu,
Yulin Chen,
Zhongkai Liu,
Kai Liu,
Gang Li,
Yanfeng Guo
Abstract:
Magnetic Weyl semimetals (WSMs) bearing long-time pursuing are still very rare. We herein identified magnetic exchange induced Weyl state in EuCd2Sb2, a semimetal in type IV magnetic space group, via performing high magnetic field (B) magneto-transport measurements and ab initio calculations. For the A-type antiferromagnetic (AFM) structure of EuCd2Sb2, external B larger than 3.2 T can align Eu sp…
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Magnetic Weyl semimetals (WSMs) bearing long-time pursuing are still very rare. We herein identified magnetic exchange induced Weyl state in EuCd2Sb2, a semimetal in type IV magnetic space group, via performing high magnetic field (B) magneto-transport measurements and ab initio calculations. For the A-type antiferromagnetic (AFM) structure of EuCd2Sb2, external B larger than 3.2 T can align Eu spins to be fully polarized along the c-axis and consequently drive the system into a ferromagnetic (FM) state. Measurements up to B ~ 55 T revealed a striking Shubnikov-de Hass oscillation imposed by a nontrivial Berry phase. We unveiled a phase transition from a small-gap AFM topological insulator into a FM WSM in which Weyl points emerged along the Γ-Z path. Fermi arcs on (100) and (010) surfaces are also revealed. The results pave a way towards realization of various topological states in a single material through magnetic exchange manipulation.
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Submitted 29 March, 2019;
originally announced March 2019.
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Bloch bound state of spin-orbit-coupled fermions in an optical lattice
Authors:
Baihua Gong,
Shuai Li,
Xin-Hui Zhang,
Bo Liu,
Wei Yi
Abstract:
Understanding fundamentals of few-body physics provides an interesting bottom-up approach for the clarification of many-body properties. The remarkable experimental progress in realizing spin-orbit coupling (SOC) in optical Raman lattices offers a renewed thrust towards discovering novel few-body features induced by the interplay between SOC and optical lattices. Using the Wilson renormalization m…
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Understanding fundamentals of few-body physics provides an interesting bottom-up approach for the clarification of many-body properties. The remarkable experimental progress in realizing spin-orbit coupling (SOC) in optical Raman lattices offers a renewed thrust towards discovering novel few-body features induced by the interplay between SOC and optical lattices. Using the Wilson renormalization method to account for high-band effects, we study the low-energy two-body scattering processes of spin-$1/2$ fermions in spin-orbit coupled optical lattices. We demonstrate that, under weak SOC, adding a small lattice potential would destabilize shallow two-body bound states, contrary to conventional wisdom. On the other hand, when lattice is sufficiently deep, two-body bound states are always stabilized by increasing the lattice depth. This intriguing non-monotonic behavior of the bound-state stability derives from the competition between SOC and optical lattices, and can be explained by analyzing the low-energy density of states. We also discuss the impact of high-band effects on such a behavior, as well as potential experimental detections.
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Submitted 14 June, 2018; v1 submitted 6 June, 2018;
originally announced June 2018.
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The melilite-type compound (Sr$_{1-x}$,$A_x$)$_2$MnGe$_2$S$_6$O ($A$=K, La) being a room temperature ferromagnetic semiconductor
Authors:
Huan-Cheng Yang,
Ben-Chao Gong,
Kai Liu,
Zhong-Yi Lu
Abstract:
The seeking of room temperature ferromagnetic semiconductors, which take advantages of both the charge and spin degrees of freedom of electrons to realize a variety of functionalities in devices integrated with electronic, optical, and magnetic storage properties, has been a long-term goal of scientists and engineers. Here, by using the spin-polarized density functional theory calculations, we pre…
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The seeking of room temperature ferromagnetic semiconductors, which take advantages of both the charge and spin degrees of freedom of electrons to realize a variety of functionalities in devices integrated with electronic, optical, and magnetic storage properties, has been a long-term goal of scientists and engineers. Here, by using the spin-polarized density functional theory calculations, we predict a new series of high temperature ferromagnetic semiconductors based on the melilite-type oxysulfide Sr$_2$MnGe$_2$S$_6$O through hole (K) and electron (La) doping. Due to the lack of strong antiferromagnetic superexchange between Mn ions, the weak antiferromagnetic order in the parent compound Sr$_2$MnGe$_2$S$_6$O can be suppressed easily by charge doping with either $p$-type or $n$-type carriers, giving rise to the expected ferromagnetic order. At a doping concentration of 25%, both the hole-doped and electron-doped compounds can achieve a Curie temperature ($T_\text{c}$) above 300 K. The underlying mechanism is analyzed. Our study provides an effective approach for exploring new types of high temperature ferromagnetic semiconductors.
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Submitted 12 April, 2018;
originally announced April 2018.
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Equilibrium susceptibilities of superparamagnets: longitudinal & transverse, quantum & classical
Authors:
J. L. Garcia-Palacios,
J. B. Gong,
F. Luis
Abstract:
The equilibrium susceptibility of uniaxial paramagnets is studied in a unified framework which permits to connect traditional results of the theory of quantum paramagnets, $\Sm=1/2, 1, 3/2$, ..., with molecular magnetic clusters, $\Sm\sim5, 10, 20$, all the way up, $\Sm=30, 50, 100$,... to the theory of classical superparamagnets. This is done using standard tools of quantum statistical mechanic…
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The equilibrium susceptibility of uniaxial paramagnets is studied in a unified framework which permits to connect traditional results of the theory of quantum paramagnets, $\Sm=1/2, 1, 3/2$, ..., with molecular magnetic clusters, $\Sm\sim5, 10, 20$, all the way up, $\Sm=30, 50, 100$,... to the theory of classical superparamagnets. This is done using standard tools of quantum statistical mechanics and linear response theory (the Kubo correlator formalism). Several features of the temperature dependence of the susceptibility curves (crossovers, peaks, deviations from Curie law) are studied and their scalings with $\Sm$ identified and characterized. Both the longitudinal and transverse susceptibilities are discussed, as well as the response of the ensemble with anisotropy axes oriented at random. For the latter case a simple approximate formula is derived too, and its range of validity assessed, so it could be used in modelization of experiments.
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Submitted 22 September, 2009; v1 submitted 18 July, 2009;
originally announced July 2009.
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Quantum ratchet control - harvesting on Landau-Zener transitions
Authors:
L. Morales-Molina,
S. Flach,
J. B. Gong
Abstract:
We control the current of a single particle quantum ratchet by designing ramping schemes for experimentally accessible control parameters. We harvest on Landau-Zener transitions between Floquet states. Adiabatic and diabatic ramping allow to control the resulting directed transport. We find strong changes of the current in the adiabatic regime. Simple loops in control parameter space with altern…
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We control the current of a single particle quantum ratchet by designing ramping schemes for experimentally accessible control parameters. We harvest on Landau-Zener transitions between Floquet states. Adiabatic and diabatic ramping allow to control the resulting directed transport. We find strong changes of the current in the adiabatic regime. Simple loops in control parameter space with alternating adiabatic and diabatic ramping are proposed. We obtain also current reversal. Full desymmetrization of the quantum ratchet increases the critical ramping speed which separates the adiabatic from the diabatic regime.
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Submitted 3 July, 2008; v1 submitted 6 May, 2008;
originally announced May 2008.
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Range-based attacks on links in random scale-free networks
Authors:
Baihua Gong,
Jun Liu,
Liang Huang,
Kongqing Yang
Abstract:
$Range$ and $load$ play keys on the problem of attacking on links in random scale-free (RSF) networks. In this Brief Report we obtain the relation between $range$ and $load$ in RSF networks analytically by the generating function theory, and then give an estimation about the impact of attacks on the $efficiency$ of the network. The analytical results show that short range attacks are more destru…
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$Range$ and $load$ play keys on the problem of attacking on links in random scale-free (RSF) networks. In this Brief Report we obtain the relation between $range$ and $load$ in RSF networks analytically by the generating function theory, and then give an estimation about the impact of attacks on the $efficiency$ of the network. The analytical results show that short range attacks are more destructive for RSF networks, and are confirmed numerically. Further our results are consistent with the former literature (Physical Review E \textbf{66}, 065103(R) (2002)).
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Submitted 1 August, 2007;
originally announced August 2007.
