Electronic and optical properties of two-dimensional flat band triphosphides
Authors:
Gabriel Elyas Gama Araujo,
Lucca Moraes Gomes,
Dominike Pacine de Andrade Deus,
Alexandre Cavalheiro Dias,
Andreia Luisa da Rosa
Abstract:
In this work we use first-principles density-functional theory (DFT)
calculations combined with the maximally localized Wannier function
tight binding Hamiltonian (MLWF-TB) and Bethe-Salpeter equation (BSE)
formalism to investigate quasi-particle effects in 2D electronic and
optical properties of triphosphide based two-dimensional materials
XP$_3$ (X = Ga, Ge, As; In, Sn, Sb; Tl, Pb and…
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In this work we use first-principles density-functional theory (DFT)
calculations combined with the maximally localized Wannier function
tight binding Hamiltonian (MLWF-TB) and Bethe-Salpeter equation (BSE)
formalism to investigate quasi-particle effects in 2D electronic and
optical properties of triphosphide based two-dimensional materials
XP$_3$ (X = Ga, Ge, As; In, Sn, Sb; Tl, Pb and Bi). We find that with
exception of InP$_3$, all structures have indirect band gap. A
noticeable feature is the appearance of flat valence bands associated
to phosphorous atoms, mainly in InP$_3$ and GaP$_3$ structures. Furthermore,
AIMD calculations show that 2D-XP$_3$ is stable at room temperature,
with exception of TlP$_3$ monolayer, which shows a strong distortion
yielding to a phase separation of the P and Tl layers. Finally, we show that
monolayered XP$_3$ exhibits optical absorption with strong excitonic
effects, thus revealing exciting features of these monolayered
materials.
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Submitted 4 April, 2025;
originally announced April 2025.
Magnetic interactions in doped silicene for spintronics
Authors:
L. M. Gomes,
A. L. da Rosa
Abstract:
Silicon is a material whose technological application is well established, and obtaining this material in nanostructured form increases its possibility of integration in current technology. Silicene is a natural compatibility with current silicon-based electronics industry. Furthermore, doping is a technique that can be often used to adjust the band gap of silicene and at the same time introduce n…
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Silicon is a material whose technological application is well established, and obtaining this material in nanostructured form increases its possibility of integration in current technology. Silicene is a natural compatibility with current silicon-based electronics industry. Furthermore, doping is a technique that can be often used to adjust the band gap of silicene and at the same time introduce new functions. Here we investigate Several aspects of silicene doping with chromium, such as dopant solubility limits, site preference for adsorption and doping, and formation of magnetic domains. In this work we carried out investigation on diffusion and doping of chromium atoms on silicene. We use density-functional theory to identify the electronic and magnetic properties of tchromium atoms on monolayer and bilayer silicene. We find that magnetization depends on key parameters such as buckling, interlayer distance and adsorption site.
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Submitted 2 February, 2024;
originally announced February 2024.
