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Direct observation of distinct bulk and edge nonequilibrium spin accumulation in ultrathin MoTe$_2$
Authors:
Fangchu Chen,
Kamal Das,
Bowen Yang,
Chuangtang Wang,
Shazhou Zhong,
Diana Golovanova,
He Ren,
Tianyang Wang,
Xuan Luo,
Yuping Sun,
Liuyan Zhao,
Guo-Xing Miao,
Binghai Yan,
Adam W. Tsen
Abstract:
Low-symmetry two-dimensional (2D) topological materials such as MoTe$_2$ host efficient charge-to-spin conversion (CSC) mechanisms that can be harnessed for novel electronic and spintronic devices. However, the nature of the various CSC mechanisms and their correlation with underlying crystal symmetries remain unsettled. In this work, we use local spin-sensitive electrochemical potential measureme…
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Low-symmetry two-dimensional (2D) topological materials such as MoTe$_2$ host efficient charge-to-spin conversion (CSC) mechanisms that can be harnessed for novel electronic and spintronic devices. However, the nature of the various CSC mechanisms and their correlation with underlying crystal symmetries remain unsettled. In this work, we use local spin-sensitive electrochemical potential measurements to directly probe the spatially dependent nonequilibrium spin accumulation in MoTe$_2$ flakes down to four atomic layers. We are able to clearly disentangle contributions originating from the spin Hall and Rashba-Edelstein effects and uncover an abundance of unconventional spin polarizations that develop uniquely in the sample bulk and edges with decreasing thickness. Using ab-initio calculations, we construct a unified understanding of all the observed CSC components in relation to the material dimensionality and stacking arrangement. Our findings not only illuminate previous CSC results on MoTe$_2$ but also have important ramifications for future devices that can exploit the local and layer-dependent spin properties of this 2D topological material.
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Submitted 6 July, 2025;
originally announced July 2025.
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Discovery of transient topological crystalline order in optically driven SnSe
Authors:
Masataka Mogi,
Dongsung Choi,
Kyoung Hun Oh,
Diana Golovanova,
Yufei Zhao,
Yifan Su,
Zongqi Shen,
Doron Azoury,
Haoyu Xia,
Batyr Ilyas,
Tianchuang Luo,
Noriaki Kida,
Taito Osaka,
Tadashi Togashi,
Binghai Yan,
Nuh Gedik
Abstract:
Ultrafast optical excitation provides a powerful route for accessing emergent quantum phases far from equilibrium, enabling transient light-induced phenomena such as magnetism, ferroelectricity, and superconductivity. However, extending this approach to induce topological phases, especially in conventional semiconductors, remains challenging. Here, we report the observation of a thermally inaccess…
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Ultrafast optical excitation provides a powerful route for accessing emergent quantum phases far from equilibrium, enabling transient light-induced phenomena such as magnetism, ferroelectricity, and superconductivity. However, extending this approach to induce topological phases, especially in conventional semiconductors, remains challenging. Here, we report the observation of a thermally inaccessible, transient topological crystalline order in the layered semiconductor SnSe, a trivial insulator with a sizable (~ 0.8 eV) band gap, induced by femtosecond above-gap excitation. Time- and angle-resolved photoemission spectroscopy directly reveals the sub-picosecond emergence of Dirac-like linear dispersions within the band gap. Their features, including a high Fermi velocity (~ 2.5x10^5 m/s), multiple Dirac points away from high-symmetry momenta, and independence from probe photon energy, are consistent with mirror-symmetry-protected surface states of a topological crystalline insulator. The observed spectral dynamics, combined with density functional theory calculations, indicate that the femtosecond excitation transiently increases lattice symmetry, enabling topological crystalline order to emerge. Our discovery opens new avenues for ultrafast optical control of topological quantum phases in semiconductors, with potential applications in quantum and spintronic devices.
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Submitted 16 May, 2025; v1 submitted 20 February, 2025;
originally announced February 2025.
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Tuning the Intrinsic Spin Hall Effect by Charge Density Wave Order in Topological Kagome Metals
Authors:
Diana Golovanova,
Hengxin Tan,
Tobias Holder,
Binghai Yan
Abstract:
Kagome metals are topological materials with a rich phase diagram featuring various charge density wave orders and even unconventional superconductivity. However, little is still known about possible spin-polarized responses in these non-magnetic compounds. Here, we perform ab-initio calculations of the intrinsic spin Hall effect (SHE) in the kagome metals AV$_3$Sb$_5$ (A=Cs, Rb, K), CsTi$_3$Bi…
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Kagome metals are topological materials with a rich phase diagram featuring various charge density wave orders and even unconventional superconductivity. However, little is still known about possible spin-polarized responses in these non-magnetic compounds. Here, we perform ab-initio calculations of the intrinsic spin Hall effect (SHE) in the kagome metals AV$_3$Sb$_5$ (A=Cs, Rb, K), CsTi$_3$Bi$_5$ and ScV$_6$Sn$_6$. We report large spin Hall conductivities, comparable with the Weyl semimetal TaAs. Additionally, in CsV$_3$Sb$_5$ the SHE is strongly renormalized by the CDW order. We can understand these results based on the topological properties of band structures, demonstrating that the SHE is dominated by the position and shape of the Dirac nodal lines in the kagome sublattice. Our results suggest kagome materials as a promising, tunable platform for future spintronics applications.
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Submitted 9 March, 2024; v1 submitted 12 July, 2023;
originally announced July 2023.
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Locality of topological dynamics in Chern insulators
Authors:
A. A. Markov,
D. B. Golovanova,
A. R. Yavorsky,
A. N. Rubtsov
Abstract:
A system having macroscopic patches in different topological phases have no well-defined global topological invariant. To treat such a case, the quantities labeling different areas of the sample according to their topological state are used, dubbed local topological markers. Here we study their dynamics. We concentrate on two quantities, namely local Chern marker and on-site charge induced by an a…
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A system having macroscopic patches in different topological phases have no well-defined global topological invariant. To treat such a case, the quantities labeling different areas of the sample according to their topological state are used, dubbed local topological markers. Here we study their dynamics. We concentrate on two quantities, namely local Chern marker and on-site charge induced by an applied magnetic field. We demonstrate that the time-dependent local Chern marker is much more non-local object than equilibrium one. Surprisingly, in large samples driven out of equilibrium, it leads to a simple description of the local Chern marker's dynamics by a local continuity equation. Also, we argue that the connection between the local Chern marker and magnetic-field induced charge known in static holds out of equilibrium in some experimentally relevant systems as well. This gives a clear physical description of the marker's evolution and provides a simple recipe for experimental estimation of the topological marker's value.
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Submitted 26 April, 2023;
originally announced April 2023.
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Truly local topological dynamics of driven defects in Chern insulator
Authors:
Diana B. Golovanova,
Alexander R. Yavorsky,
Anton A. Markov,
Alexey N. Rubtsov
Abstract:
Robust zero modes supported by defects is one of the key features of topological matter. Its presence renders a system topologically inhomegeneuous, thus having no well-defined global topological invariant. The quantities labeling different areas of the sample according to their topological state were dubbed local topological markers. Here we study their dynamics and the possibility to control the…
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Robust zero modes supported by defects is one of the key features of topological matter. Its presence renders a system topologically inhomegeneuous, thus having no well-defined global topological invariant. The quantities labeling different areas of the sample according to their topological state were dubbed local topological markers. Here we study their dynamics and the possibility to control their distribution over the sample. We suggest a new perspective on the evolution of local markers. It gives a clear physical description of the markers evolution in terms of response functions and the ease of measurement. Furthermore, new markers' equations of motion are truly local, being ensured that the current of the marker exists and obeys the lattice continuity equation. The formalism presented does not rely on the single-particle quantities therefore might be extended to interacting systems.
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Submitted 27 December, 2021;
originally announced December 2021.
