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The Influence of Graphene Curvature on Hydrogen Adsorption: Towards Hydrogen Storage Devices
Authors:
Sarah Goler,
Camilla Coletti,
Valentina Tozzini,
Vincenzo Piazza,
Torge Mashoff,
Fabio Beltram,
Vittorio Pellegrini,
Stefan Heun
Abstract:
The ability of atomic hydrogen to chemisorb on graphene makes the latter a promising material for hydrogen storage. Based on scanning tunneling microscopy techniques, we report on site-selective adsorption of atomic hydrogen on convexly curved regions of monolayer graphene grown on SiC(0001). This system exhibits an intrinsic curvature owing to the interaction with the substrate. We show that at l…
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The ability of atomic hydrogen to chemisorb on graphene makes the latter a promising material for hydrogen storage. Based on scanning tunneling microscopy techniques, we report on site-selective adsorption of atomic hydrogen on convexly curved regions of monolayer graphene grown on SiC(0001). This system exhibits an intrinsic curvature owing to the interaction with the substrate. We show that at low coverage hydrogen is found on convex areas of the graphene lattice. No hydrogen is detected on concave regions. These findings are in agreement with theoretical models which suggest that both binding energy and adsorption barrier can be tuned by controlling the local curvature of the graphene lattice. This curvature-dependence combined with the known graphene flexibility may be exploited for storage and controlled release of hydrogen at room temperature making it a valuable candidate for the implementation of hydrogen-storage devices.
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Submitted 28 November, 2013;
originally announced November 2013.
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Raman Spectroscopy of magneto-phonon resonances in Graphene and Graphite
Authors:
Sarah Goler,
Jun Yan,
Vittorio Pellegrini,
Aron Pinczuk
Abstract:
The magneto-phonon resonance or MPR occurs in semiconductor materials when the energy spacing between Landau levels is continuously tuned to cross the energy of an optical phonon mode. MPRs have been largely explored in bulk semiconductors, in two-dimensional systems and in quantum dots. Recently there has been significant interest in the MPR interactions of the Dirac fermion magnetoexcitons in gr…
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The magneto-phonon resonance or MPR occurs in semiconductor materials when the energy spacing between Landau levels is continuously tuned to cross the energy of an optical phonon mode. MPRs have been largely explored in bulk semiconductors, in two-dimensional systems and in quantum dots. Recently there has been significant interest in the MPR interactions of the Dirac fermion magnetoexcitons in graphene, and a rich splitting and anti-crossing phenomena of the even parity E2g long wavelength optical phonon mode have been theoretically proposed and experimentally observed. The MPR has been found to crucially depend on disorder in the graphene layer. This is a feature that creates new venues for the study of interplays between disorder and interactions in the atomic layers. We review here the fundamentals of MRP in graphene and the experimental Raman scattering works that have led to the observation of these phenomena in graphene and graphite.
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Submitted 23 April, 2012;
originally announced April 2012.
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Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene
Authors:
Sarah Goler,
Camilla Coletti,
Vincenzo Piazza,
Pasqualantonio Pingue,
Francesco Colangelo,
Vittorio Pellegrini,
Konstantin V. Emtsev,
Stiven Forti,
Ulrich Starke,
Fabio Beltram,
Stefan Heun
Abstract:
On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of Si from the substrate. The graphene film is separated from the bulk by a carbon-rich interface layer (hereafter called the buffer layer) which in part covalently binds to the substrate. Its structural and electronic properties are currently under debate. In the present work we report scanning tunne…
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On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of Si from the substrate. The graphene film is separated from the bulk by a carbon-rich interface layer (hereafter called the buffer layer) which in part covalently binds to the substrate. Its structural and electronic properties are currently under debate. In the present work we report scanning tunneling microscopy (STM) studies of the buffer layer and of quasi-free-standing monolayer graphene (QFMLG) that is obtained by decoupling the buffer layer from the SiC(0001) substrate by means of hydrogen intercalation. Atomic resolution STM images of the buffer layer reveal that, within the periodic structural corrugation of this interfacial layer, the arrangement of atoms is topologically identical to that of graphene. After hydrogen intercalation, we show that the resulting QFMLG is relieved from the periodic corrugation and presents no detectable defect sites.
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Submitted 2 August, 2013; v1 submitted 21 November, 2011;
originally announced November 2011.
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Self-assembly and electron-beam-induced direct etching of suspended graphene nanostructures
Authors:
Sarah Goler,
Vincenzo Piazza,
Stefano Roddaro,
Vittorio Pellegrini,
Fabio Beltram,
Pasqualantonio Pingue
Abstract:
We report on suspended single-layer graphene deposition by a transfer-printing approach based on polydimethylsiloxane stamps. The transfer printing method allows the exfoliation of graphite flakes from a bulk graphite sample and their residue-free deposition on a silicon dioxide substrate. This deposition system creates a blistered graphene surface due to strain induced by the transfer process its…
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We report on suspended single-layer graphene deposition by a transfer-printing approach based on polydimethylsiloxane stamps. The transfer printing method allows the exfoliation of graphite flakes from a bulk graphite sample and their residue-free deposition on a silicon dioxide substrate. This deposition system creates a blistered graphene surface due to strain induced by the transfer process itself. Single-layer-graphene deposition and its "blistering" on the substrate are demonstrated by a combination of Raman spectroscopy, scanning electron microscopy and atomic-force microscopy measurements. Finally, we demonstrate that blister-like suspended graphene are self-supporting single-layer structures and can be flattened by employing a spatially-resolved direct-lithography technique based on electron-beam induced etching.
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Submitted 28 May, 2011;
originally announced May 2011.
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Observation of magneto-phonon resonance of Dirac fermions in graphite
Authors:
J. Yan,
S. Goler,
T. D. Rhone,
M. Han,
R. He,
P. Kim,
V. Pellegrini,
A. Pinczuk
Abstract:
Coherent coupling of Dirac fermion magneto-excitons with an optical phonon is observed in graphite as marked magnetic-field dependent splittings and anti-crossing behavior of the two coupled modes. The sharp magneto-phonon resonance occurs in regions of the graphite sample with properties of superior single-layer graphene having enhanced lifetimes of Dirac fermions. The greatly reduced carrier bro…
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Coherent coupling of Dirac fermion magneto-excitons with an optical phonon is observed in graphite as marked magnetic-field dependent splittings and anti-crossing behavior of the two coupled modes. The sharp magneto-phonon resonance occurs in regions of the graphite sample with properties of superior single-layer graphene having enhanced lifetimes of Dirac fermions. The greatly reduced carrier broadening to values below the graphene electron-phonon coupling constant explains the appearance of sharp resonances that reveal a fundamental interaction of Dirac fermions.
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Submitted 6 August, 2010;
originally announced August 2010.
