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Long distance electron-electron scattering detected with point contacts
Authors:
Lev V. Ginzburg,
Yuze Wu,
Marc P. Röösli,
Pedro Rosso Gomez,
Rebekka Garreis,
Chuyao Tong,
Veronika Stará,
Carolin Gold,
Khachatur Nazaryan,
Serhii Kryhin,
Hiske Overweg,
Christian Reichl,
Matthias Berl,
Takashi Taniguchi,
Kenji Watanabe,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin
Abstract:
We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densities. We find a magnetoconductance peak around B = 0. With increasing temperature, the width of the peak increases monotonically, while its amplitude first increases and then decreases. For GaAs point contacts the peak i…
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We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densities. We find a magnetoconductance peak around B = 0. With increasing temperature, the width of the peak increases monotonically, while its amplitude first increases and then decreases. For GaAs point contacts the peak is particularly sharp at relatively low temperatures $T\approx$1.5 K: the curve rounds on a scale of few tens of $μ$T hinting at length scales of several millimeters for the corresponding scattering processes. We propose a model based on the transition between different transport regimes with increasing temperature: from ballistic transport to few electron-electron scatterings to hydrodynamic superballistic flow to hydrodynamic Poiseuille-like flow. The model is in qualitative and, in many cases, quantitative agreement with the experimental observations.
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Submitted 11 August, 2023;
originally announced August 2023.
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Counting Statistics of Single Electron Transport in Bilayer Graphene Quantum Dots
Authors:
Rebekka Garreis,
Jonas Daniel Gerber,
Veronika Stará,
Chuyao Tong,
Carolin Gold,
Marc Röösli,
Kenji Watanabe,
Takashi Taniguchi,
Klaus Ensslin,
Thomas Ihn,
Annika Kurzmann
Abstract:
We measure telegraph noise of current fluctuations in an electrostatically defined quantum dot in bilayer graphene by real-time detection of single electron tunneling with a capacitively coupled neighboring quantum dot. Suppression of the second and third cumulant (related to shot noise) in a tunable graphene quantum dot is demonstrated experimentally. With this method we demonstrate the ability t…
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We measure telegraph noise of current fluctuations in an electrostatically defined quantum dot in bilayer graphene by real-time detection of single electron tunneling with a capacitively coupled neighboring quantum dot. Suppression of the second and third cumulant (related to shot noise) in a tunable graphene quantum dot is demonstrated experimentally. With this method we demonstrate the ability to measure very low current and noise levels. Furthermore, we use this method to investigate the first spin excited state, an essential prerequisite to measure spin relaxation.
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Submitted 24 January, 2023; v1 submitted 14 October, 2022;
originally announced October 2022.
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Kondo effect and spin-orbit coupling in graphene quantum dots
Authors:
Annika Kurzmann,
Yaakov Kleeorin,
Chuyao Tong,
Rebekka Garreis,
Angelika Knothe,
Marius Eich,
Christopher Mittag,
Carolin Gold,
Folkert K. de Vries,
Kenji Watanabe,
Takashi Taniguchi,
Vladimir Fal'ko,
Yigal Meir,
Thomas Ihn,
Klaus Ensslin
Abstract:
The Kondo effect is a cornerstone in the study of strongly correlated fermions. The coherent exchange coupling of conduction electrons to local magnetic moments gives rise to a Kondo cloud that screens the impurity spin. Whereas complete Kondo screening has been explored widely, realizations of the underscreened scenario - where only some of several Kondo channels participate in the screening - re…
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The Kondo effect is a cornerstone in the study of strongly correlated fermions. The coherent exchange coupling of conduction electrons to local magnetic moments gives rise to a Kondo cloud that screens the impurity spin. Whereas complete Kondo screening has been explored widely, realizations of the underscreened scenario - where only some of several Kondo channels participate in the screening - remain rare. Here we report the observation of fully screened and underscreened Kondo effects in quantum dots in bilayer graphene. More generally, we introduce a unique platform for studying Kondo physics. In contrast to carbon nanotubes, whose curved surfaces give rise to strong spin-orbit coupling breaking the SU(4) symmetry of the electronic states relevant for the Kondo effect, we study a nominally flat carbon material with small spin-orbit coupling. Moreover, the unusual two-electron triplet ground state in bilayer graphene dots provides a route to exploring the underscreened spin-1 Kondo effect.
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Submitted 8 March, 2021;
originally announced March 2021.
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Local signatures of electron-electron scattering in an electronic cavity
Authors:
Carolin Gold,
Beat A. Bräm,
Richard Steinacher,
Tobias Krähenmann,
Andrea Hofmann,
Christian Reichl,
Werner Wegscheider,
Mansour Shayegan,
Klaus Ensslin,
Thomas Ihn
Abstract:
We image equilibrium and non-equilibrium transport through a two-dimensional electronic cavity using scanning gate microscopy (SGM). Injecting electrons into the cavity through a quantum point contact close to equilibrium, we raster-scan a weakly invasive tip above the cavity regions and measure the modulated conductance through the cavity. Varying the electron injection energy between $\pm$ 2 meV…
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We image equilibrium and non-equilibrium transport through a two-dimensional electronic cavity using scanning gate microscopy (SGM). Injecting electrons into the cavity through a quantum point contact close to equilibrium, we raster-scan a weakly invasive tip above the cavity regions and measure the modulated conductance through the cavity. Varying the electron injection energy between $\pm$ 2 meV, we observe that conductance minima turn into maxima beyond the energy threshold of $\pm$ 0.6 meV. This observation bears similarity to previous measurements by Jura et al. [Jura et al., Phys. Rev. B 82, 155328 (2010)] who used a strongly invasive tip potential to study electron injection into an open two-dimensional electron gas. This resemblance suggests a similar microscopic origin based on electron-electron interactions.
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Submitted 14 January, 2021;
originally announced January 2021.
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Superballistic electron flow through a point contact in a Ga[Al]As heterostructure
Authors:
Lev V. Ginzburg,
Carolin Gold,
Marc P. Röösli,
Christian Reichl,
Matthias Berl,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin
Abstract:
We measure electronic transport through point contacts in the high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with increasing temperature in a temperature window around $T \sim 10 K$ for all investigated electron densities and point contact widths. For high electron densities this c…
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We measure electronic transport through point contacts in the high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with increasing temperature in a temperature window around $T \sim 10 K$ for all investigated electron densities and point contact widths. For high electron densities this conductance exceeds the fundamental ballistic limit (Sharvin limit). These observations are in agreement with a viscous electron transport model and previous experiments in graphene.
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Submitted 2 June, 2021; v1 submitted 7 December, 2020;
originally announced December 2020.
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Imaging signatures of the local density of states in an electronic cavity
Authors:
Carolin Gold,
Beat A. Bräm,
Michael S. Ferguson,
Tobias Krähenmann,
Andrea Hofmann,
Richard Steinacher,
Keith R. Fratus,
Christian Reichl,
Werner Wegscheider,
Dietmar Weinmann,
Klaus Ensslin,
Thomas Ihn
Abstract:
We use Scanning Gate Microscopy to study electron transport through an open, gate-defined resonator in a Ga(Al)As heterostructure. Raster-scanning the voltage-biased metallic tip above the resonator, we observe distinct conductance modulations as a function of the tip-position and voltage. Quantum mechanical simulations reproduce these conductance modulations and reveal their relation to the parti…
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We use Scanning Gate Microscopy to study electron transport through an open, gate-defined resonator in a Ga(Al)As heterostructure. Raster-scanning the voltage-biased metallic tip above the resonator, we observe distinct conductance modulations as a function of the tip-position and voltage. Quantum mechanical simulations reproduce these conductance modulations and reveal their relation to the partial local density of states in the resonator. Our measurements illustrate the current frontier between possibilities and limitations in imaging the local density of states in buried electron systems using scanning gate microscopy.
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Submitted 22 March, 2021; v1 submitted 27 November, 2020;
originally announced November 2020.
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Shell Filling and Trigonal Warping in Graphene Quantum Dots
Authors:
Rebekka Garreis,
Angelika Knothe,
Chuyao Tong,
Marius Eich,
Carolin Gold,
Kenji Watanabe,
Takashi Taniguchi,
Vladimir Fal'ko,
Thomas Ihn,
Klaus Ensslin,
Annika Kurzmann
Abstract:
Transport measurements through a few-electron circular quantum dot in bilayer graphene display bunching of the conductance resonances in groups of four, eight and twelve. This is in accordance with the spin and valley degeneracies in bilayer graphene and an additional threefold 'minivalley degeneracy' caused by trigonal warping. For small electron numbers, implying a small dot size and a small dis…
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Transport measurements through a few-electron circular quantum dot in bilayer graphene display bunching of the conductance resonances in groups of four, eight and twelve. This is in accordance with the spin and valley degeneracies in bilayer graphene and an additional threefold 'minivalley degeneracy' caused by trigonal warping. For small electron numbers, implying a small dot size and a small displacement field, a two-dimensional s- and then a p-shell are successively filled with four and eight electrons, respectively. For electron numbers larger than twelve, as the dot size and the displacement field increase, the single-particle ground state evolves into a three-fold degenerate minivalley ground state. A transition between these regimes is observed in our measurements and can be described by band-structure calculations. Measurements in magnetic field confirm Hund's second rule for spin filling of the quantum dot levels, emphasizing the importance of exchange interaction effects.
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Submitted 12 April, 2021; v1 submitted 16 November, 2020;
originally announced November 2020.
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Coherent Jetting behind a gate-defined Channel in Bilayer Graphene
Authors:
Carolin Gold,
Angelika Knothe,
Annika Kurzmann,
Aitor Garcia-Ruiz,
Kenji Watanabe,
Takashi Taniguchi,
Vladimir Fal'ko,
Klaus Ensslin,
Thomas Ihn
Abstract:
Graphene has evolved as a platform for quantum transport that can compete with the best and cleanest semiconductor systems. Recently, many interesting local properties of carrier transport in graphene have been investigated by various scanning probe techniques. Here, we report on the observation of distinct electronic jets emanating from a narrow split-gate defined channel in bilayer graphene. We…
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Graphene has evolved as a platform for quantum transport that can compete with the best and cleanest semiconductor systems. Recently, many interesting local properties of carrier transport in graphene have been investigated by various scanning probe techniques. Here, we report on the observation of distinct electronic jets emanating from a narrow split-gate defined channel in bilayer graphene. We find that these jets, which are visible via their interference patterns, occur predominantly with an angle of 60° between each other. This observation is related to the specific bandstructure of bilayer graphene, in particular trigonal warping, which leads to a valley-dependent selection of momenta for low-energy conduction channels. This experimental observation of electron jetting has consequences for carrier transport in graphene in general as well as for devices relying on ballistic and valley selective transport.
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Submitted 20 August, 2020;
originally announced August 2020.
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Scanning Gate Microscopy of Localized States in a gate-defined Bilayer Graphene Channel
Authors:
Carolin Gold,
Annika Kurzmann,
Kenji Watanabe,
Takashi Taniguchi,
Klaus Ensslin,
Thomas Ihn
Abstract:
We use Scanning Gate Microscopy to demonstrate the presence of localized states arising from potential inhomogeneities in a 50nm-wide, gate-defined conducting channel in encapsulated bilayer graphene. When imaging the channel conductance under the influence of a local tip-induced potential, we observe ellipses of enhanced conductance as a function of the tip position. These ellipses allow us to in…
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We use Scanning Gate Microscopy to demonstrate the presence of localized states arising from potential inhomogeneities in a 50nm-wide, gate-defined conducting channel in encapsulated bilayer graphene. When imaging the channel conductance under the influence of a local tip-induced potential, we observe ellipses of enhanced conductance as a function of the tip position. These ellipses allow us to infer the location of the localized states and to study their dependence on the displacement field. For large displacement fields, we observe that localized states tend to occur halfway into the channel. All our observations can be well explained within the framework of stochastic Coulomb blockade.
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Submitted 17 June, 2020;
originally announced June 2020.
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Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts
Authors:
Yongjin Lee,
Angelika Knothe,
Hiske Overweg,
Marius Eich,
Carolin Gold,
Annika Kurzmann,
Veronika Klasovika,
Takashi Taniguchi,
Kenji Wantanabe,
Vladimir Fal'ko,
Thomas Ihn,
Klaus Ensslin,
Peter Rickhaus
Abstract:
In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the en…
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In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the energy spectrum of a quantum point contact realized by a suitable gate geometry in bilayer graphene. Using finite bias spectroscopy we measure the energy scales arising from the lateral confinement as well as the Zeeman splitting and find a spin g-factor of 2. The valley g-factor can be tuned by a factor of 3 using vertical electric fields, reaching values between 40 and 120. The results are quantitatively explained by a calculation considering topological magnetic moment and its dependence on confinement and the vertical displacement field.
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Submitted 5 March, 2020; v1 submitted 14 November, 2019;
originally announced November 2019.
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Fully automated identification of 2D material samples
Authors:
Eliska Greplova,
Carolin Gold,
Benedikt Kratochwil,
Tim Davatz,
Riccardo Pisoni,
Annika Kurzmann,
Peter Rickhaus,
Mark H. Fischer,
Thomas Ihn,
Sebastian Huber
Abstract:
Thin nanomaterials are key constituents of modern quantum technologies and materials research. Identifying specimens of these materials with properties required for the development of state of the art quantum devices is usually a complex and lengthy human task. In this work we provide a neural-network driven solution that allows for accurate and efficient scanning, data-processing and sample ident…
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Thin nanomaterials are key constituents of modern quantum technologies and materials research. Identifying specimens of these materials with properties required for the development of state of the art quantum devices is usually a complex and lengthy human task. In this work we provide a neural-network driven solution that allows for accurate and efficient scanning, data-processing and sample identification of experimentally relevant two-dimensional materials. We show how to approach classification of imperfect imbalanced data sets using an iterative application of multiple noisy neural networks. We embed the trained classifier into a comprehensive solution for end-to-end automatized data processing and sample identification.
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Submitted 31 October, 2019;
originally announced November 2019.
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Gap Opening in Twisted Double Bilayer Graphene by Crystal fields
Authors:
Peter Rickhaus,
Giulia Zheng,
Jose L. Lado,
Yongjin Lee,
Annika Kurzmann,
Marius Eich,
Riccardo Pisoni,
Chuyao Tong,
Rebekka Garreis,
Carolin Gold,
Michele Masseroni,
Takashi Taniguchi,
Kenji Wantanabe,
Thomas Ihn,
and Klaus Ensslin
Abstract:
Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to the planes. It has been realized recently that twisted graphene multilayers provide powerful playgrounds to engineer electronic properties by the number of layers, the twist angle, applied electric biases, electronic in…
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Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to the planes. It has been realized recently that twisted graphene multilayers provide powerful playgrounds to engineer electronic properties by the number of layers, the twist angle, applied electric biases, electronic interactions and elastic relaxations, but crystal fields have not received the attention they deserve. Here we show that the bandstructure of large-angle twisted double bilayer graphene is strongly modified by crystal fields. In particular, we experimentally demonstrate that twisted double bilayer graphene, encapsulated between hBN layers, exhibits an intrinsic bandgap. By the application of an external field, the gaps in the individual bilayers can be closed, allowing to determine the crystal fields. We find that crystal fields point from the outer to the inner layers with strengths in the bottom (top) bilayer of -0.13 V/nm (0.12 V/nm). We show both by means of first principles calculations and low energy models that crystal fields open a band gap in the groundstate. Our results put forward a physical scenario in which a crystal field effect in carbon substantially impacts the low energy properties of twisted double bilayer graphene, suggesting that such contributions must be taken into account in other regimes to faithfully predict the electronic properties of twisted graphene multilayers.
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Submitted 4 November, 2019; v1 submitted 23 October, 2019;
originally announced October 2019.
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Scanning Gate Microscopy in a Viscous Electron Fluid
Authors:
Beat A Braem,
Francesco M D Pellegrino,
Alessandro Principi,
Marc Röösli,
Carolin Gold,
Szymon Hennel,
Jonne V Koski,
Matthias Berl,
Werner Dietsche,
Werner Wegscheider,
Marco Polini,
Thomas Ihn,
Klaus Ensslin
Abstract:
We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To probe this regime we measure so-called vicinity voltages and use a voltage-biased scanning tip to induce a movable local perturbation. We find that the scanning gat…
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We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To probe this regime we measure so-called vicinity voltages and use a voltage-biased scanning tip to induce a movable local perturbation. We find that the scanning gate images differentiate reliably between the different regimes of electron transport. Our data are in good agreement with recent theories for interacting electron liquids in the ballistic and viscous regimes stimulated by measurements in graphene. However, the range of temperatures and densities where viscous effects are observable in Ga[Al]As are very distinct from the graphene material system.
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Submitted 21 December, 2018; v1 submitted 9 July, 2018;
originally announced July 2018.
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Stable Branched Electron Flow
Authors:
B A Braem,
C Gold,
S Hennel,
M Röösli,
M Berl,
W Dietsche,
W Wegscheider,
K. Ensslin,
T Ihn
Abstract:
The pattern of branched electron flow revealed by scanning gate microscopy shows the distribution of ballistic electron trajectories. The details of the pattern are determined by the correlated potential of remote dopants with an amplitude far below the Fermi energy. We find that the pattern persists even if the electron density is significantly reduced such that the change in Fermi energy exceeds…
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The pattern of branched electron flow revealed by scanning gate microscopy shows the distribution of ballistic electron trajectories. The details of the pattern are determined by the correlated potential of remote dopants with an amplitude far below the Fermi energy. We find that the pattern persists even if the electron density is significantly reduced such that the change in Fermi energy exceeds the background potential amplitude. The branch pattern is robust against changes in charge carrier density, but not against changes in the background potential caused by additional illumination of the sample.
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Submitted 8 July, 2018;
originally announced July 2018.
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Measuring the degeneracy of discrete energy levels using a GaAs/AlGaAs quantum dot
Authors:
Andrea Hofmann,
Ville F. Maisi,
Carolin Gold,
Tobias Krähenmann,
Clemens Rössler,
Julien Basset,
Peter Märki,
Christian Reichl,
Werner Wegscheider,
Klaus Ensslin,
Thomas Ihn
Abstract:
We demonstrate an experimental method for measuring quantum state degeneracies in bound state energy spectra. The technique is based on the general principle of detailed balance, and the ability to perform precise and efficient measurements of energy-dependent tunnelling-in and -out rates from a reservoir. The method is realized using a GaAs/AlGaAs quantum dot allowing for the detection of time-re…
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We demonstrate an experimental method for measuring quantum state degeneracies in bound state energy spectra. The technique is based on the general principle of detailed balance, and the ability to perform precise and efficient measurements of energy-dependent tunnelling-in and -out rates from a reservoir. The method is realized using a GaAs/AlGaAs quantum dot allowing for the detection of time-resolved single-electron tunnelling with a precision enhanced by a feedback-control. It is thoroughly tested by tuning orbital and spin-degeneracies with electric and magnetic fields. The technique also lends itself for studying the connection between the ground state degeneracy and the lifetime of the excited states.
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Submitted 4 October, 2016;
originally announced October 2016.
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Evolution of quantum criticality in the system CeNi9Ge4
Authors:
H. Michor,
D. T. Adroja,
A. D. Hillier,
M. M. Koza,
S. Manalo,
C. Gold,
L. Peyker,
E. -W. Scheidt
Abstract:
The heavy fermion system CeNi9Ge4 exhibits a paramagnetic ground state with remarkable features such as: a record value of the electronic specific heat coefficient in systems with a paramagnetic ground state, γ= C/T \simeq 5.5 J/molK^2 at 80 mK, a temperature-dependent Sommerfeld-Wilson ratio, R=χ/γ, below 1 K and an approximate single ion scaling of the 4f-magnetic specific heat and susceptibilit…
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The heavy fermion system CeNi9Ge4 exhibits a paramagnetic ground state with remarkable features such as: a record value of the electronic specific heat coefficient in systems with a paramagnetic ground state, γ= C/T \simeq 5.5 J/molK^2 at 80 mK, a temperature-dependent Sommerfeld-Wilson ratio, R=χ/γ, below 1 K and an approximate single ion scaling of the 4f-magnetic specific heat and susceptibility. These features are related to a rather small Kondo energy scale of a few Kelvin in combination with a quasi-quartet crystal field ground state. Tuning the system towards long range magnetic order is accomplished by replacing a few at.% of Ni by Cu or Co. Specific heat, susceptibility and resistivity studies reveal T_N \sim 0.2 K for CeNi8CuGe4 and T_N \sim 1 K for CeNi8CoGe4. To gain insight whether the transition from the paramagnetic NFL state to the magnetically ordered ground state is connected with a heavy fermion quantum critical point we performed specific heat and ac susceptibility studies and utilized the μSR technique and quasi-elastic neutron scattering.
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Submitted 27 October, 2011;
originally announced October 2011.
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Competing magnetic interactions in CeNi9-xCoxGe4
Authors:
L Peyker,
C Gold,
W Scherer,
H Michor,
E-W Scheidt
Abstract:
CeNi9Ge4 exhibits outstanding heavy fermion features with remarkable non-Fermi- liquid behavior which is mainly driven by single-ion effects. The substitution of Ni by Cu causes a reduction of both, the RKKY coupling and Kondo interaction, coming along with a dramatic change of the crystal field (CF) splitting. Thereby a quasi-quartet ground state observed in CeNi9Ge4 reduces to a two-fold degen…
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CeNi9Ge4 exhibits outstanding heavy fermion features with remarkable non-Fermi- liquid behavior which is mainly driven by single-ion effects. The substitution of Ni by Cu causes a reduction of both, the RKKY coupling and Kondo interaction, coming along with a dramatic change of the crystal field (CF) splitting. Thereby a quasi-quartet ground state observed in CeNi9Ge4 reduces to a two-fold degenerate one in CeNi8CuGe4. This leads to a modiffcation of the effective spin degeneracy of the Kondo lattice ground state and to the appearance of antiferromagnetic (AFM) order. To obtain a better understanding of consequences resulting from a reduction of the effective spin degeneracy, we stepwise replaced Ni by Co. Thereby an increase of the Kondo and RKKY interactions through the reduction of the effective d-electron count is expected. Accordingly, a paramagnetic Fermi liquid ground state should arise. Our experimental studies, however, reveal AFM order already for small Co concentrations, which becomes even more pronounced with increasing Co content x. Thereby the modiffcation of the effective spin degeneracy seems to play a crucial role in this system.
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Submitted 23 November, 2010;
originally announced November 2010.
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Antiferromagnetic behavior in CeCo$_{9}$Ge$_{4}$
Authors:
C. Gold,
L. Peyker,
E. -W. Scheidt,
H. Michor,
W. Scherer
Abstract:
We investigate the novel intermetallic ternary compounds \emph{R}Co$_{9}$Ge$_{4}$ with \emph{R} = La and Ce by means of $X$-ray diffraction, susceptibility and specific heat measurements. CeCo$_{9}$Ge$_{4}$ crystallizes in the space group ${I}$ 4/ ${mcm}$ and is characterized by the coexistence of two different magnetic sublattices. The Ce-based sublattice, with an effective moment close to the…
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We investigate the novel intermetallic ternary compounds \emph{R}Co$_{9}$Ge$_{4}$ with \emph{R} = La and Ce by means of $X$-ray diffraction, susceptibility and specific heat measurements. CeCo$_{9}$Ge$_{4}$ crystallizes in the space group ${I}$ 4/ ${mcm}$ and is characterized by the coexistence of two different magnetic sublattices. The Ce-based sublattice, with an effective moment close to the expected value for a Ce$^{3+}$-ion, exhibits a magnetically ordered ground state with $T_{\mathrm{N}}=12.5$ K. The Co-based sublattice, however, exhibits magnetic moments due to itinerant 3$d$ electrons. The magnetic specific heat contribution of the Ce-sublattice is discussed in terms of a resonance-level model implying the interplay between an antiferromagnetic phase transition and the Kondo-effect and an underlying Schottky-anomaly indicating a crystal field level scheme splitting into three twofold degenerated micro states ($Δ_1 = 69$ K, $Δ_2 = 133$ K).
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Submitted 9 June, 2009;
originally announced June 2009.
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Evolution of single-ion crystal field and Kondo features in Ce$_{0.5}$La$_{0.5}$Ni$_{9-x}$Cu$_x$Ge$_4$
Authors:
L Peyker,
C Gold,
E-W Scheidt,
H Michor,
W Scherer
Abstract:
Starting with the heavy fermion compound CeNi$_9$Ge$_4$, the substitution of nickel by copper leads to a dominance of the RKKY interaction in competition with the Kondo and crystal field interaction. Consequently, this results in an antiferromagnetic phase transition in CeNi$_{9-x}$Cu$_x$Ge$_4$ for $x>0.4$, which is, however, not fully completed up to a Cu-concentration of $x=1$. To study the in…
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Starting with the heavy fermion compound CeNi$_9$Ge$_4$, the substitution of nickel by copper leads to a dominance of the RKKY interaction in competition with the Kondo and crystal field interaction. Consequently, this results in an antiferromagnetic phase transition in CeNi$_{9-x}$Cu$_x$Ge$_4$ for $x>0.4$, which is, however, not fully completed up to a Cu-concentration of $x=1$. To study the influence of single-ion effects on the AFM ordering by shielding the $4f$-moments, we analyzed the spin diluted substitution series La$_{0.5}$Ce$_{0.5}$Ni$_{9-x}$Cu$_x$Ge$_4$ by magnetic susceptibility $χ$ and specific heat $C$ measurements. For small Cu-amounts $x\leq 0.4$ the data reveal single-ion scaling with regard to the Ce-concentration, while for larger Cu-concentrations the AFM transition (encountered in the CeNi$_{9-x}$Cu$_x$Ge$_4$ series) is found to be completely depressed. Calculation of the entropy reveal that the Kondo-effect still shields the 4$f$-moments of the Ce$^{3+}$-ions in CeNi$_8$CuGe$_4$.
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Submitted 9 June, 2009;
originally announced June 2009.
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Crystal field studies on the heavy fermion compound CeNi$_8$CuGe$_4$
Authors:
L Peyker,
C Gold,
E-W Scheidt,
H Michor,
T Unruh,
A Senyshyn,
O Stockert,
W Scherer
Abstract:
Substitution of nickel by copper in the heavy fermion system CeNi$_{9-x}$Cu$_x$Ge$_4$ alters the local crystal field environment of the Ce$^{3+}$-ions. This leads to a quantum phase transition near $x\approx0.4$, which is not only driven by the competition between Kondo effect and RKKY interaction, but also by a reduction of an effectively fourfold to a twofold degenerate crystal field ground st…
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Substitution of nickel by copper in the heavy fermion system CeNi$_{9-x}$Cu$_x$Ge$_4$ alters the local crystal field environment of the Ce$^{3+}$-ions. This leads to a quantum phase transition near $x\approx0.4$, which is not only driven by the competition between Kondo effect and RKKY interaction, but also by a reduction of an effectively fourfold to a twofold degenerate crystal field ground state. To study the consequences of a changing crystal field in CeNi$_8$CuGe$_4$ on its Kondo properties, inelastic neutron scattering (INS) experiments were performed. Two well-defined crystal field transitions were observed in the energy-loss spectra at 4 K. The crystal field level scheme determined by neutron spectroscopy is compared with results from specific heat measurements.
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Submitted 9 June, 2009;
originally announced June 2009.
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Evolution of Quantum Criticality in CeNi_{9-x}Cu_xGe_4
Authors:
L. Peyker,
C. Gold,
E. -W. Scheidt,
W. Scherer,
J. G. Donath,
P. Gegenwart,
F. Mayr,
V. Eyert,
E. Bauer,
H. Michor
Abstract:
Crystal structure, specific heat, thermal expansion, magnetic susceptibility and electrical resistivity studies of the heavy fermion system CeNi_{9-x}Cu_xGe_4 (0 <= x <= 1) reveal a continuous tuning of the ground state by Ni/Cu substitution from an effectively fourfold degenerate non-magnetic Kondo ground state of CeNi_9Ge_4 (with pronounced non-Fermi-liquid features) towards a magnetically ord…
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Crystal structure, specific heat, thermal expansion, magnetic susceptibility and electrical resistivity studies of the heavy fermion system CeNi_{9-x}Cu_xGe_4 (0 <= x <= 1) reveal a continuous tuning of the ground state by Ni/Cu substitution from an effectively fourfold degenerate non-magnetic Kondo ground state of CeNi_9Ge_4 (with pronounced non-Fermi-liquid features) towards a magnetically ordered, effectively twofold degenerate ground state in CeNi_8CuGe_4 with T_N = 175 +- 5 mK. Quantum critical behavior, C/T ~ χ~ -ln(T), is observed for x about 0.4. Hitherto, CeNi_{9-x}Cu_xGe_4 represents the first system where a substitution-driven quantum phase transition is connected not only with changes of the relative strength of Kondo effect and RKKY interaction, but also with a reduction of the effective crystal field ground state degeneracy.
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Submitted 17 December, 2008;
originally announced December 2008.
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Model Selection for Support Vector Machine Classification
Authors:
Carl Gold,
Peter Sollich
Abstract:
We address the problem of model selection for Support Vector Machine (SVM) classification. For fixed functional form of the kernel, model selection amounts to tuning kernel parameters and the slack penalty coefficient $C$. We begin by reviewing a recently developed probabilistic framework for SVM classification. An extension to the case of SVMs with quadratic slack penalties is given and a simpl…
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We address the problem of model selection for Support Vector Machine (SVM) classification. For fixed functional form of the kernel, model selection amounts to tuning kernel parameters and the slack penalty coefficient $C$. We begin by reviewing a recently developed probabilistic framework for SVM classification. An extension to the case of SVMs with quadratic slack penalties is given and a simple approximation for the evidence is derived, which can be used as a criterion for model selection. We also derive the exact gradients of the evidence in terms of posterior averages and describe how they can be estimated numerically using Hybrid Monte Carlo techniques. Though computationally demanding, the resulting gradient ascent algorithm is a useful baseline tool for probabilistic SVM model selection, since it can locate maxima of the exact (unapproximated) evidence. We then perform extensive experiments on several benchmark data sets. The aim of these experiments is to compare the performance of probabilistic model selection criteria with alternatives based on estimates of the test error, namely the so-called ``span estimate'' and Wahba's Generalized Approximate Cross-Validation (GACV) error. We find that all the ``simple'' model criteria (Laplace evidence approximations, and the Span and GACV error estimates) exhibit multiple local optima with respect to the hyperparameters. While some of these give performance that is competitive with results from other approaches in the literature, a significant fraction lead to rather higher test errors. The results for the evidence gradient ascent method show that also the exact evidence exhibits local optima, but these give test errors which are much less variable and also consistently lower than for the simpler model selection criteria.
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Submitted 18 March, 2002;
originally announced March 2002.
