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Unconventional quantum oscillations and evidence of nonparabolic electronic states in quasi-two-dimensional electron system at complex oxide interfaces
Authors:
Km Rubi,
Denis R. Candido,
Manish Dumen,
Shengwei Zeng,
Emily L. Q. N. Ammerlaan,
Femke Bangma,
Mun K. Chan,
Michel Goiran,
Ariando Ariando,
Suvankar Chakraverty,
Walter Escoffier,
Uli Zeitler,
Neil Harrison
Abstract:
The simultaneous occurrence of electric-field controlled superconductivity and spin-orbit interaction makes two-dimensional electron systems (2DES) constructed from perovskite transition metal oxides promising candidates for the next generation of spintronics and quantum computing. It is, however, essential to understand the electronic bands thoroughly and verify the predicted electronic states ex…
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The simultaneous occurrence of electric-field controlled superconductivity and spin-orbit interaction makes two-dimensional electron systems (2DES) constructed from perovskite transition metal oxides promising candidates for the next generation of spintronics and quantum computing. It is, however, essential to understand the electronic bands thoroughly and verify the predicted electronic states experimentally in these 2DES to advance technological applications. Here, we present novel insights into the electronic states of the 2DES at oxide interfaces through comprehensive investigations of Shubnikov-de Haas oscillations in two different systems: EuO/KTaO$_3$ (EuO/KTO) and LaAlO$_3$/SrTiO$_3$ (LAO/STO). To accurately resolve these oscillations, we conducted transport measurements in high magnetic fields up to 60 T and low temperatures down to 100 mK. For 2D confined electrons at both interfaces, we observed a progressive increase of oscillations frequency and cyclotron mass with the magnetic field. We interpret these intriguing findings by considering the existence of non-trivial electronic bands, for which the $E-k$ dispersion incorporates both linear and parabolic dispersion relations. In addition to providing experimental evidence for topological-like electronic states in KTO-2DES and STO-2DES, the unconventional oscillations presented in this study establish a new paradigm for quantum oscillations in 2DES based on perovskite transition metal oxides, where the oscillations frequency exhibits quadratic dependence on the magnetic field.
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Submitted 4 December, 2024; v1 submitted 10 July, 2023;
originally announced July 2023.
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Dimensionality control and rotational symmetry breaking superconductivity in square-planar layered nickelates
Authors:
Lin Er Chow,
Km Rubi,
King Yau Yip,
Mathieu Pierre,
Maxime Leroux,
Xinyou Liu,
Zhaoyang Luo,
Shengwei Zeng,
Changjian Li,
Michel Goiran,
Neil Harrison,
Walter Escoffier,
Swee Kuan Goh,
A. Ariando
Abstract:
The interplay between dimensionality and various phases of matter is a central inquiry in condensed matter physics. New phases are often discovered through spontaneously broken symmetry. Understanding the dimensionality of superconductivity in the high-temperature cuprate analogue $-$ layered nickelates and revealing a new symmetry-breaking state are the keys to deciphering the underlying pairing…
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The interplay between dimensionality and various phases of matter is a central inquiry in condensed matter physics. New phases are often discovered through spontaneously broken symmetry. Understanding the dimensionality of superconductivity in the high-temperature cuprate analogue $-$ layered nickelates and revealing a new symmetry-breaking state are the keys to deciphering the underlying pairing mechanism. Here, we demonstrate the highly-tunable dimensionality and a broken rotational symmetry state in the superconductivity of square-planar layered nickelates. The superconducting state, probed by superconducting critical current and magnetoresistance within superconducting transition under direction-dependent in-plane magnetic fields, exhibits a $C_2$ rotational symmetry which breaks the $C_4$ rotational symmetry of the square-planar lattice. Furthermore, by performing detailed examination of the angular dependent upper critical fields at temperatures down to 0.5 K with high-magnetic pulsed-fields, we observe a crossover from two-dimensional to three-dimensional superconducting states which can be manipulated by the ionic size fluctuations in the rare-earth spacer layer. Such a large degree of controllability is desired for tailoring strongly two/three-dimensional superconductors and navigating various pairing landscapes for a better understanding of the correlation between reduced dimensionality and unconventional pairing. These results illuminate new directions to unravel the high-temperature superconducting pairing mechanism.
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Submitted 18 January, 2023;
originally announced January 2023.
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Ionic modulation at the LaAlO$_3$/KTaO$_3$ interface for extreme high-mobility two-dimensional electron gas
Authors:
H. Yan,
S. W. Zeng,
K. Rubi,
G. J. Omar,
Z. T. Zhang,
M. Goiran,
W. Escoffier,
A. Ariando
Abstract:
Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides based two-dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high-performance devices, in 5d-oxid…
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Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides based two-dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high-performance devices, in 5d-oxides devices remains far behind their 3d-oxides analogs. The carriers mobility in these oxides is significantly hampered by the inevitable presence of defects generated during the growth process. Here, we report very high mobility ($\sim$ 22650 cm$^2$V$^{-1}$s$^{-1}$) of 5d-2DES confined at the LaAlO$_3$/KTaO$_3$ interface. The high mobility, which is beyond the values observed in LaAlO$_3$/SrTiO$_3$ and $γ$-Al$_2$O$_3$/SrTiO$_3$ systems in the same carrier-density range, is achieved using the ionic-liquid gating at room temperature. We postulate that the ionic-liquid gating affects the oxygen vacancies and efficiently reduces any disorder at the interface. Investigating density and mobility in a broad range of back-gate voltage, we reveal that the mobility follows the power-law $μ\propto n^{1.2}$, indicating the very high quality of ionic-liquid-gated LaAlO$_3$/KTaO$_3$ devices, consistent with our postulate. Further, the analysis of the quantum oscillations measured in high magnetic fields confirms that the high-mobility electrons occupy the electronic sub-bands emerging from the Ta:5d orbitals of KTaO$_3$.
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Submitted 25 September, 2022;
originally announced September 2022.
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Pauli-limit violation in lanthanide infinite-layer nickelate superconductors
Authors:
L. E. Chow,
K. Y. Yip,
M. Pierre,
S. W. Zeng,
Z. T. Zhang,
T. Heil,
J. Deuschle,
P. Nandi,
S. K. Sudheesh,
Z. S. Lim,
Z. Y. Luo,
M. Nardone,
A. Zitouni,
P. A. van Aken,
M. Goiran,
S. K. Goh,
W. Escoffier,
A. Ariando
Abstract:
Superconductivity can be destroyed by a magnetic field with an upper bound known as the Pauli-limit in spin-singlet superconductors. Almost all the discovered superconductors are spin-singlet, with the highest transition temperature $T_c$ at ambient pressure achieved in the cuprate family. The closest cuprate analogue is the recently discovered infinite-layer nickelate, which hosts substantial str…
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Superconductivity can be destroyed by a magnetic field with an upper bound known as the Pauli-limit in spin-singlet superconductors. Almost all the discovered superconductors are spin-singlet, with the highest transition temperature $T_c$ at ambient pressure achieved in the cuprate family. The closest cuprate analogue is the recently discovered infinite-layer nickelate, which hosts substantial structural and electronic similarity to the cuprate. A previous magnetotransport study on Nd$_{0.775}$Sr$_{0.225}$NiO$_2$ has observed an isotropic Pauli-limited upper critical field. Here, we report a large violation (>2 times) of Pauli-limit in every crystallographic directions in La$_{1-x}$(Ca/Sr)$_x$NiO$_2$ regardless of the doping $x$. Such a large violation of the Pauli-limit in all directions in La$_{1-x}$(Ca/Sr)$_x$NiO$_2$ is unexpected and unlikely accounted by a Fulde Ferrell-Larkin-Ovchinnikov (FFLO)-state, strong spin-orbit-coupling, strong-coupling or a large pseudogap. On the other hand, in agreement with the previous report, we observe a Pauli-limiting critical field in Nd$_{1-x}$Sr$_x$NiO$_2$ and the superconducting anisotropy decreases as doping increases, suggesting a spin-singlet pairing. Therefore, superconductivity in La$_{1-x}$(Ca/Sr)$_x$NiO$_2$ could be driven by a non-spin-singlet Cooper pairing mechanism with an attractive high-$T_c$ at 10 K, an order of magnitude higher than the known spin triplet superconductors, favourably extending the application of spin-triplet superconductivity in topological matter, non-dissipative spintronics, and quantum computing.
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Submitted 26 April, 2022;
originally announced April 2022.
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Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface
Authors:
I. Leermakers,
K. Rubi,
M. Yang,
B. Kerdi,
M. Goiran,
W. Escoffier,
A. S. Rana,
A. E. M. Smink,
A. Brinkman,
H. Hilgenkamp,
J. C. Maan,
U. Zeitler
Abstract:
We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo effect at low-temperature, and switches the negative magnetoresistance into the positive one. A large increase in the density of high-mobility carriers…
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We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo effect at low-temperature, and switches the negative magnetoresistance into the positive one. A large increase in the density of high-mobility carriers after illumination leads to quantum oscillations in the magnetoresistance originating from the Landau quantization. The carrier density ($\sim 2 \times 10^{12}$ cm$^{-2}$) and effective mass ($\sim 1.7 ~m_e$) estimated from the oscillations suggest that the high-mobility electrons occupy the d$_{xz/yz}$ subbands of Ti:t$_{2g}$ orbital extending deep within the conducting sheet of SrTiO$_3$. Our results demonstrate that the illumination which induces additional carriers at the interface can pave the way to control the Kondo-like scattering and study the quantum transport in the complex oxide heterostructures.
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Submitted 20 August, 2021;
originally announced August 2021.
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Electronic subbands in the a-LaAlO$_3$/KTaO$_3$ interface revealed by quantum oscillations in high magnetic fields
Authors:
Km Rubi,
Shengwei Zeng,
Femke Bangma,
Michel Goiran,
A. Ariando,
Walter Escoffier,
Uli Zeitler
Abstract:
Investigating Shubnikov-de Haas (SdH) oscillations in high magnetic fields, we experimentally infer the electronic band structure of the quasi-two-dimensional electron gas (2DEG) at the ionic-liquid gated amorphous (a)-LaAlO$_3$/KTaO$_3$ interface. The angular dependence of SdH oscillations indicates a 2D confinement of a majority of electrons at the interface. However, additional SdH oscillations…
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Investigating Shubnikov-de Haas (SdH) oscillations in high magnetic fields, we experimentally infer the electronic band structure of the quasi-two-dimensional electron gas (2DEG) at the ionic-liquid gated amorphous (a)-LaAlO$_3$/KTaO$_3$ interface. The angular dependence of SdH oscillations indicates a 2D confinement of a majority of electrons at the interface. However, additional SdH oscillations with an angle-independent frequency observed at high tilt angles indicate the coexistence of 3D charge carriers extending deep into the KTaO$_3$. The SdH oscillations measured in magnetic fields perpendicular to the interface show four frequencies corresponding to four 2D subbands with different effective masses (0.20 $m_e$ - 0.55 $m_e$). The single-frequency oscillations originating from 3D electrons yields a larger effective mass of $\sim$ 0.70 $m_e$. Overall, the inferred subbands are in good agreement with the theoretical-calculations and angle-resolved photoemission spectroscopy studies on 2DEG at KTaO$_3$ surface.
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Submitted 24 March, 2021;
originally announced March 2021.
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High magnetic field spin-valley-split Shubnikov-de Haas oscillations in a WSe$_2$ monolayer
Authors:
Banan Kerdi,
Mathieu Pierre,
Robin Cours,
Bénédicte Warot-Fonrose,
Michel Goiran,
Walter Escoffier
Abstract:
We study Shubnikov-de Haas oscillations in a p-type WSe$_2$ monolayer under very high magnetic field. The oscillation pattern is complex due to a large spin and valley splitting, in the non-fully-resolved Landau level regime. Our experimental data can be reproduced with a model in which the main parameter is the ratio between the Zeeman energy and the cyclotron energy. The model takes into account…
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We study Shubnikov-de Haas oscillations in a p-type WSe$_2$ monolayer under very high magnetic field. The oscillation pattern is complex due to a large spin and valley splitting, in the non-fully-resolved Landau level regime. Our experimental data can be reproduced with a model in which the main parameter is the ratio between the Zeeman energy and the cyclotron energy. The model takes into account the Landau levels from both valleys with the same Gaussian broadening, which allows to predict the relative amplitude of the resistance oscillation originating from each valley. The Zeeman energy is found to be several times larger than the cyclotron energy. It translates into a large and increasing effective Landé factor as the hole density decreases, in the continuity of the values reported in the literature at lower carrier density.
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Submitted 1 October, 2020;
originally announced October 2020.
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Aperiodic quantum oscillations in the two-dimensional electron gas at the LaAlO3/SrTiO3 interface
Authors:
Km Rubi,
Julien Gosteau,
Raphaël Serra,
Kun Han,
Shengwei Zeng,
Zhen Huang,
Etienne Snoeck,
Rémi Arras,
Benedicte Warot-Fonrose,
Ariando,
Michel Goiran,
Walter Escoffier
Abstract:
Despite several attempts, the intimate electronic structure of two-dimensional electron systems buried at the interface between LaAlO3 and SrTiO3 still remains to be experimentally revealed. Here, we investigate the transport properties of a high-mobility quasi-two-dimensional electron gas at this interface under high magnetic field (55 T) and provide new insights for electronic band structure by…
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Despite several attempts, the intimate electronic structure of two-dimensional electron systems buried at the interface between LaAlO3 and SrTiO3 still remains to be experimentally revealed. Here, we investigate the transport properties of a high-mobility quasi-two-dimensional electron gas at this interface under high magnetic field (55 T) and provide new insights for electronic band structure by analyzing the Shubnikov-de Haas oscillations. Interestingly, the quantum oscillations are not 1/B-periodic and produce a highly non-linear Landau plot (Landau level index versus 1/B). Among possible scenarios, the Roth-Gao-Niu equation provides a natural explanation for 1/B-aperiodic oscillations in relation with the magnetic response functions of the system. Overall, the magneto-transport data are discussed in light of high-resolution scanning transmission electron microscopy analysis of the interface as well as calculations from density functional theory.
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Submitted 7 March, 2019;
originally announced March 2019.
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Electrical Properties and Subband Occupancy at the (La,Sr)(Al,Ta)O$_3$/SrTiO$_3$ Interface
Authors:
K. Han,
Z. Huang,
S. W. Zeng,
M. Yang,
C. J. Li,
W. X. Zhou,
X. Renshaw Wang,
T. Venkatesan,
J. M. D. Coey,
M. Goiran,
W. Escoffier,
Ariando
Abstract:
The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{0.3}$/SrTiO$_{0.3}$ (LSAT/STO) interface. Before oxygen annealing, the as-grown interface exhibits a high electron density…
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The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{0.3}$/SrTiO$_{0.3}$ (LSAT/STO) interface. Before oxygen annealing, the as-grown interface exhibits a high electron density and electron occupancy of two subbands: higher-mobility electrons ($μ_1\approx{10^4}$ cm$^2$V$^{-1}$s$^{-1}$ at 2 K) occupy the lower-energy $3d_{xy}$ subband, while lower-mobility electrons ($μ_1\approx{10^3}$ cm$^{2}$V$^{-1}$s$^{-1}$ at 2 K) propagate in the higher-energy $3d_{xz/yz}$-dominated subband. After removing oxygen vacancies by annealing in oxygen, only a single type of 3dxy electrons remain at the annealed interface, showing tunable Shubnikov-de Haas (SdH) oscillations below 9 T at 2 K and an effective mass of $0.7m_e$. By contrast, no oscillation is observed at the as-grown interface even when electron mobility is increased to $50,000$ cm$^{2}$V$^{-1}$s$^{-1}$ by gating voltage. Our results reveal the important roles of both carrier mobility and subband occupancy in tuning the quantum transport at oxide interfaces.
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Submitted 29 June, 2017;
originally announced June 2017.
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Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect
Authors:
M. Yang,
O. Couturaud,
W. Desrat,
C. Consejo,
D. Kazazis,
R. Yakimova,
M. Syväjärvi,
M. Goiran,
J. Béard,
P. Frings,
M. Pierre,
A. Cresti,
W. Escoffier,
B. Jouault
Abstract:
We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $ν=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a $1/B$ periodicity and an anomalous phase, which we relate to the presence o…
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We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $ν=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a $1/B$ periodicity and an anomalous phase, which we relate to the presence of additional electron reservoirs. The high field experimental data suggest that these reservoirs induce a continuous increase of the carrier density up to the highest available magnetic field, thus enlarging the quantum plateaus. These in-plane inhomogeneities, in the form of high carrier density graphene pockets, modulate the quantum Hall effect breakdown and decrease the breakdown current.
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Submitted 24 November, 2016;
originally announced November 2016.
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Temperature-dependent magnetospectroscopy of HgTe quantum wells
Authors:
A. V. Ikonnikov,
S. S. Krishtopenko,
O. Drachenko,
M. Goiran,
M. S. Zholudev,
V. V. Platonov,
Yu. B. Kudasov,
A. S. Korshunov,
D. A. Maslov,
I. V. Makarov,
O. M. Surdin,
A. V. Philippov,
M. Marcinkiewicz,
S. Ruffenach,
F. Teppe,
W. Knap,
N. N. Mikhailov,
S. A. Dvoretsky,
V. I. Gavrilenko
Abstract:
We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of La…
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We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of Landau levels have been performed. We show that although our samples are topological insulators at low temperatures only, the signature of such phase persists in optical transitions at high temperatures and high magnetic fields. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases in HgTe quantum wells.
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Submitted 30 August, 2016; v1 submitted 17 June, 2016;
originally announced June 2016.
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High field magneto-transport in two-dimensional electron gas LaAlO3/SrTiO3
Authors:
Ming Yang,
Mathieu Pierre,
Olivier Toressin,
Michel Goiran,
Walter Escoffier,
Shengwei Zeng,
Zhen Huang,
Han Kun,
Thirumalai Venkatesan,
Ariando,
Michael Coey
Abstract:
Transport properties of the complex oxide LaAlO3/SrTiO3 interface are investigated under high magnetic field (55T). By rotating the sample with respect to the magnetic field, the two-dimensional nature of charge transport is clearly established. Small oscillations of the agnetoresistance with altered periodicity are observed when plotted versus inverse magnetic field. We attribute this effect to R…
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Transport properties of the complex oxide LaAlO3/SrTiO3 interface are investigated under high magnetic field (55T). By rotating the sample with respect to the magnetic field, the two-dimensional nature of charge transport is clearly established. Small oscillations of the agnetoresistance with altered periodicity are observed when plotted versus inverse magnetic field. We attribute this effect to Rashba spin-orbit coupling which remains consistent with large negative magnetoresistance when the field is parallel to the sample plane. A large inconsistency between the carrier density extracted from Shubnikov-de Haas analysis and from the Hall effect is explained by the contribution to transport of at least two bands with different mobility.
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Submitted 12 April, 2016;
originally announced April 2016.
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Band bending inversion in Bi$_2$Se$_3$ nanostructures
Authors:
Louis Veyrat,
Fabrice Iacovella,
Joseph Dufouleur,
Christian Nowka,
Hannes Funke,
Ming Yang,
Walter Escoffier,
Michel Goiran,
Bernd Buechner,
Silke Hampel,
Romain Giraud
Abstract:
Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times10^{19}\text{cm}^{-3}$ to $6\times10^{17}\text{cm}^{-3}$. The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensiona…
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Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times10^{19}\text{cm}^{-3}$ to $6\times10^{17}\text{cm}^{-3}$. The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density, as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.
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Submitted 8 August, 2015;
originally announced August 2015.
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Magneto-transport Subbands Spectroscopy in InAs Nanowires
Authors:
Florian Vigneau,
Vladimir Prudkovkiy,
Ivan Duchemin,
Walter Escoffier,
Philippe Caroff,
Yann-Michel Niquet,
Renaud Leturcq,
Michel Goiran,
Bertrand Raquet
Abstract:
We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate control of the Fermi energy reveal the Landau fragmentation, carrying the fingerprints of the confined InAs material. Our numerical simulations of the magnetic…
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We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate control of the Fermi energy reveal the Landau fragmentation, carrying the fingerprints of the confined InAs material. Our numerical simulations of the magnetic band structure consistently support the experimental results and reveal key parameters of the electronic confinement.
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Submitted 13 November, 2013;
originally announced November 2013.
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Integer Quantum Hall Effect in Trilayer Graphene
Authors:
A. Kumar,
W. Escoffier,
J. M. Poumirol,
C. Faugeras,
D. P. Arovas,
M. M. Fogler,
F. Guinea,
S. Roche,
M. Goiran,
B. Raquet
Abstract:
The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landa…
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The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landau levels for the gated trilayer. The plateau structure in the Hall resistivity determines the stacking order (ABA versus ABC). We find that the IQHE in ABC trilayer graphene is similar to that in the monolayer, except for the absence of a plateau at filling factor v=2. At very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder.
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Submitted 6 April, 2011;
originally announced April 2011.
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Unveiling the Landau Levels Structure of Graphene Nanoribbons
Authors:
Rebeca Ribeiro,
Jean-Marie Poumirol,
Alessandro Cresti,
Walter Escoffier,
Michel Goiran,
Jean-Marc Broto,
Stephan Roche,
Bertrand Raquet
Abstract:
Magnetotransport measurements are performed in ultraclean (lithographically patterned) graphene nanoribbons down to 70 nm. At high magnetic fields, a fragmentation of the electronic spectrum into a Landau levels pattern with unusual features is unveiled. The singular Landau spectrum reveals large magneto-oscillations of the Fermi energy and valley degeneracy lifting. Quantum simulations suggest so…
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Magnetotransport measurements are performed in ultraclean (lithographically patterned) graphene nanoribbons down to 70 nm. At high magnetic fields, a fragmentation of the electronic spectrum into a Landau levels pattern with unusual features is unveiled. The singular Landau spectrum reveals large magneto-oscillations of the Fermi energy and valley degeneracy lifting. Quantum simulations suggest some disorder threshold at the origin of mixing between opposite chiral magnetic edge states and disappearance of quantum Hall effect.
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Submitted 16 February, 2011;
originally announced February 2011.
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Charge inhomogeneities and transport in semiconductor heterostructures with a manganese $δ$-layer
Authors:
Vikram Tripathi,
Kusum Dhochak,
B. A. Aronzon,
V. V. Rylkov,
A. B. Davydov,
Bertrand Raquet,
Michel Goiran,
K. I. Kugel
Abstract:
We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $δ$-layer of Mn, where the charge carriers are confined within a quantum well and hence both ferromagnetism and transport are two-dimensional (2D) and differ qualitatively from their bulk counterparts. Anomalies in the electrical resistance observed i…
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We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $δ$-layer of Mn, where the charge carriers are confined within a quantum well and hence both ferromagnetism and transport are two-dimensional (2D) and differ qualitatively from their bulk counterparts. Anomalies in the electrical resistance observed in both metallic and insulating structures can be interpreted as a signature of significant ferromagnetic correlations. The insulating samples turn out to be the most interesting as they can give us valuable insights into the mechanisms of ferromagnetism in these heterostructures. At low charge carrier densities, we show how the interplay of disorder and nonlinear screening can result in the organization of the carriers in the 2D transport channel into charge droplets separated by insulating barriers. Based on such a droplet picture and including the effect of magnetic correlations, we analyze the transport properties of this set of droplets, compare it with experimental data, and find a good agreement between the model calculations and experiment. Our analysis shows that the peak or shoulder-like features observed in temperature dependence of resistance of 2D heterostructures $δ$-doped by Mn lie significantly below the Curie temperature $T_{C}$ unlike the three-dimensional case, where it lies above and close to $T_{C}$. We also discuss the consequences of our description for understanding the mechanisms of ferromagnetism in the heterostructures under study.
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Submitted 25 December, 2010;
originally announced December 2010.
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High magnetic field induced charge density waves and sign reversal of the Hall coefficient in graphite
Authors:
Amit Kumar,
Jean-Marie Poumirol,
Walter Escoffier,
Michel Goiran,
Bertrand Raquet,
Jean Claude Pivin
Abstract:
We report on the investigation of magnetic field induced charge density wave and Hall coefficient sign reversal in a quasi-two dimensional electronic system of highly oriented pyrolytic graphite under very strong magnetic field. The change of Hall sign coefficient from negative to positive occurs at low temperature and high magnetic field just after the charge density wave transition, suggesting t…
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We report on the investigation of magnetic field induced charge density wave and Hall coefficient sign reversal in a quasi-two dimensional electronic system of highly oriented pyrolytic graphite under very strong magnetic field. The change of Hall sign coefficient from negative to positive occurs at low temperature and high magnetic field just after the charge density wave transition, suggesting the role of hole-like quasi-particles in this effect. Angular dependent measurements show that the charge density wave transition and Hall sign reversal fields follow the magnetic field component along the c-axis of graphite.
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Submitted 6 June, 2010;
originally announced June 2010.
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Electron-hole coexistence in disordered graphene probed by high-field magneto-transport
Authors:
J. M. Poumirol,
W. Escoffier,
A. Kumar,
M. Goiran,
B. Raquet,
J. M. Broto
Abstract:
We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to graphene up to filling factor $ν=2$. In the close vicinity of the charge neutrality point, the system breaks up into co-existing puddles of holes and electrons, leadin…
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We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to graphene up to filling factor $ν=2$. In the close vicinity of the charge neutrality point, the system breaks up into co-existing puddles of holes and electrons, leading to a vanishing Hall and finite longitudinal resistance with no hint of divergence at very high magnetic field. Large resistance fluctuations are observed near the Dirac point. They are interpreted as the the natural consequence of the presence of electron and hole puddles. The magnetic field at which the amplitude of the fluctuations are the largest is directly linked to the mean size of the puddles.
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Submitted 14 April, 2010;
originally announced April 2010.
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Edge Magneto-Fingerprints in Disordered Graphene Nanoribbons
Authors:
Jean-Marie Poumirol,
Alessandro Cresti,
Stephan Roche,
Walter Escoffier,
Michel Goiran,
Xinran Wang,
Xiaolin Li,
Hongjie Dai,
Bertrand Raquet
Abstract:
We report on (magneto)-transport experiments in chemically derived narrow graphene nanoribbons under high magnetic fields (up to 60 Tesla). Evidences of field-dependent electronic confinement features are given, and allow estimating the possible ribbon edge symmetry. Besides, the measured large positive magnetoconductance indicates a strong suppression of backscattering induced by the magnetic f…
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We report on (magneto)-transport experiments in chemically derived narrow graphene nanoribbons under high magnetic fields (up to 60 Tesla). Evidences of field-dependent electronic confinement features are given, and allow estimating the possible ribbon edge symmetry. Besides, the measured large positive magnetoconductance indicates a strong suppression of backscattering induced by the magnetic field. Such scenario is supported by quantum simulations which consider different types of underlying disorders (smooth edge disorder and long range Coulomb scatters).
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Submitted 24 February, 2010;
originally announced February 2010.
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Possible Fractional Quantum Hall Effect in Graphite
Authors:
Y. Kopelevich,
B. Raquet,
M. Goiran,
W. Escoffier,
R. R. da Silva,
J. C. Medina Pantoja,
I. A. Lukyanchuk,
A. Sinchenko,
P. Monceau
Abstract:
Measurements of basal plane longitudinal rho_b(B) and Hall rho_H(B) resistivities were performed on highly oriented pyrolytic graphite (HOPG) samples in pulsed magnetic field up to B = 50 T applied perpendicular to graphene planes, and temperatures 1.5 K < T < 4.2 K. At B > 30 T and for all studied samples, we observed a sign change in rho_H(B) from electron- to hole-like. For our best quality s…
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Measurements of basal plane longitudinal rho_b(B) and Hall rho_H(B) resistivities were performed on highly oriented pyrolytic graphite (HOPG) samples in pulsed magnetic field up to B = 50 T applied perpendicular to graphene planes, and temperatures 1.5 K < T < 4.2 K. At B > 30 T and for all studied samples, we observed a sign change in rho_H(B) from electron- to hole-like. For our best quality sample, the measurements revealed the enhancement in rho_b(B) for B > 34 T (T = 1.8 K), presumably associated with the field-driven charge density wave or Wigner crystallization transition. Besides, well defined plateaus in rho_H(B) were detected in the ultra-quantum limit revealing the signatures of fractional quantum Hall effect in graphite.
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Submitted 13 March, 2009;
originally announced March 2009.
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Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon
Authors:
A. A. Kapustin,
A. A. Shashkin,
V. T. Dolgopolov,
M. Goiran,
H. Rakoto*,
Z. D. Kvon
Abstract:
We find that the polarization field, B_chi, obtained by scaling the weak-parallel-field magnetoresistance at different electron densities in a dilute two-dimensional electron system in (111) silicon, corresponds to the spin susceptibility that grows strongly at low densities. The polarization field, B_sat, determined by resistance saturation, turns out to deviate to lower values than B_chi with…
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We find that the polarization field, B_chi, obtained by scaling the weak-parallel-field magnetoresistance at different electron densities in a dilute two-dimensional electron system in (111) silicon, corresponds to the spin susceptibility that grows strongly at low densities. The polarization field, B_sat, determined by resistance saturation, turns out to deviate to lower values than B_chi with increasing electron density, which can be explained by filling of the upper electron subbands in the fully spin-polarized regime.
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Submitted 5 February, 2009;
originally announced February 2009.
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Magnetic Anisotropy of Co2+ as Signature of Intrinsic Ferromagnetism in ZnO:Co
Authors:
P. Sati,
R. Hayn,
R. Kuzian,
S. Regnier,
S. Schafer,
A. Stepanov,
C. Morhain,
C. Deparis,
M. Laugt,
M. Goiran,
Z. Golacki
Abstract:
We report on the magnetic properties of thoroughly characterized Zn1-xCoxO epitaxial thin films, with low Co concentration, x=0.003-0.005. Magnetic and EPR measurements, combined with crystal field theory, reveal that isolated Co2+ ions in ZnO possess a strong single ion anisotropy which leads to an "easy plane" ferromagnetic state when the ferromagnetic Co-Co interaction is considered. We sugge…
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We report on the magnetic properties of thoroughly characterized Zn1-xCoxO epitaxial thin films, with low Co concentration, x=0.003-0.005. Magnetic and EPR measurements, combined with crystal field theory, reveal that isolated Co2+ ions in ZnO possess a strong single ion anisotropy which leads to an "easy plane" ferromagnetic state when the ferromagnetic Co-Co interaction is considered. We suggest that the peculiarities of the magnetization process of this state can be viewed as a signature of intrinsic ferromagnetism in ZnO:Co materials.
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Submitted 17 February, 2007;
originally announced February 2007.
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High field level crossing studies on spin dimers in the low dimensional quantum spin system Na$_2$T$_2$(C$_2$O$_4$)$_3$(H$_2$O)$_2$ with T=Ni,Co,Fe,Mn
Authors:
C. Mennerich,
H. -H. Klauss,
A. U. B. Wolter,
S. Süllow,
F. J. Litterst,
C. Golze,
R. Klingeler,
V. Kataev,
B. B"uchner,
M. Goiran,
H. Rakoto,
J. -M. Broto,
O. Kataeva,
D. J. Price
Abstract:
In this paper we demonstrate the application of high magnetic fields to study the magnetic properties of low dimensional spin systems. We present a case study on the series of 2-leg spin-ladder compounds Na$_2$T$_2$(C$_2$O$_4$)$_3$(H$_2$O)$_2$ with T = Ni, Co, Fe and Mn. In all compounds the transition metal is in the $T^{2+}$ high spin configuation. The localized spin varies from S=1 to 3/2, 2…
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In this paper we demonstrate the application of high magnetic fields to study the magnetic properties of low dimensional spin systems. We present a case study on the series of 2-leg spin-ladder compounds Na$_2$T$_2$(C$_2$O$_4$)$_3$(H$_2$O)$_2$ with T = Ni, Co, Fe and Mn. In all compounds the transition metal is in the $T^{2+}$ high spin configuation. The localized spin varies from S=1 to 3/2, 2 and 5/2 within this series. The magnetic properties were examined experimentally by magnetic susceptibility, pulsed high field magnetization and specific heat measurements. The data are analysed using a spin hamiltonian description. Although the transition metal ions form structurally a 2-leg ladder, an isolated dimer model consistently describes the observations very well. This behaviour can be understood in terms of the different coordination and superexchange angles of the oxalate ligands along the rungs and legs of the 2-leg spin ladder. All compounds exhibit magnetic field driven ground state changes which at very low temperatures lead to a multistep behaviour in the magnetization curves. In the Co and Fe compounds a strong axial anisotropy induced by the orbital magnetism leads to a nearly degenerate ground state and a strongly reduced critical field. We find a monotonous decrease of the intradimer magnetic exchange if the spin quantum number is increased.
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Submitted 23 January, 2007;
originally announced January 2007.
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Peculiarities of the transport properties of InMnAs layers, produced by the laser deposition, in strong magnetic fields
Authors:
V. V. Rylkov,
A. S. Lagutin,
B. A. Aronzon,
V. V. Podolskii,
V. P. Lesnikov,
M. Goiran,
J. Galibert,
B. Raquet,
J. Leotin
Abstract:
Magnetotransport properties of p-InMnAs layers are studied in pulsed magnetic fields up to 30 T. Samples were prepared by the laser deposition and annealed by ruby laser pulses. Well annealed samples show p-type conductivity while they were n-type before the annealing. Surprisingly the anomalous Hall effect resistance in paramagnetic state (T>40 K) and in strong magnetic fields (B > 20 T) appear…
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Magnetotransport properties of p-InMnAs layers are studied in pulsed magnetic fields up to 30 T. Samples were prepared by the laser deposition and annealed by ruby laser pulses. Well annealed samples show p-type conductivity while they were n-type before the annealing. Surprisingly the anomalous Hall effect resistance in paramagnetic state (T>40 K) and in strong magnetic fields (B > 20 T) appears to be greater than that in ferromagnetic state (T <= 40 K), while the longitudinal resistance rises with the temperature decrease. The negative magnetoresistance saturates in magnetic fields higher then 10T at T near 4 K only, whereas the saturation fields of the anomalous Hall effect resistance are much less (around 2 T at 30K). The total reduction of resistance exceeds 10 times in magnetic fields around of 10T. The obtained results are interpreted on the base of the assumptions of the non-uniform distribution of Mn atoms acting as acceptors, the local ferromagnetic transition and the percolation-like character of the film conductivity, which prevailed under conditions of the strong fluctuations of the exchange interaction. Characteristic scales of the magneto-electric nonuniformity are estimated using analysis of the mesoscopic fluctuations of the non-diagonal components of the magnetoresistivity tensor.
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Submitted 27 December, 2006;
originally announced December 2006.
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Antiferromagnetic Dimers of Ni(II) in the S=1 Spin-Ladder Na_2Ni_2(C_2O_4)_3(H_2O)_2
Authors:
C. Mennerich,
H. -H. Klauss,
M. Broekelmann,
F. J. Litterst,
C. Golze,
R. Klingeler,
V. Kataev,
B. B"uchner,
S. -N. Grossjohann,
W. Brenig,
M. Goiran,
H. Rakoto,
J. -M. Broto,
O. Kataeva,
D. J. Price
Abstract:
We report the synthesis, crystal structure and magnetic properties of the S=1 2-leg spin-ladder compound Na_2Ni_2(C_2O_4)_3(H_2O)_2. The magnetic properties were examined by magnetic susceptibility and pulsed high field magnetization measurements. The magnetic excitations have been measured in high field high frequency ESR. Although the Ni(II) ions form structurally a 2-leg ladder, an isolated d…
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We report the synthesis, crystal structure and magnetic properties of the S=1 2-leg spin-ladder compound Na_2Ni_2(C_2O_4)_3(H_2O)_2. The magnetic properties were examined by magnetic susceptibility and pulsed high field magnetization measurements. The magnetic excitations have been measured in high field high frequency ESR. Although the Ni(II) ions form structurally a 2-leg ladder, an isolated dimer model consistently describes the observations very well. The analysis of the temperature dependent magnetization data leads to a magnetic exchange constant of J=43 K along the rungs of the ladder and an average value of the g-factor of 2.25. From the ESR measurements, we determined the single ion anisotropy to D=11.5 K. The validity of the isolated dimer model is supported by Quantum Monte Carlo calculations, performed for several ratios of interdimer and intradimer magnetic exchange and taking into account the experimentally determined single ion anisotropy. The results can be understood in terms of the different coordination and superexchange angles of the oxalate ligands along the rungs and legs of the 2-leg spin ladder.
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Submitted 13 January, 2006;
originally announced January 2006.
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Tuning the magnetic ground state of a novel tetranuclear Nickel(II) molecular complex by high magnetic fields
Authors:
C. Golze,
A. Alfonsov,
R. Klingeler,
B. Buchner,
V. Kataev,
C. Mennerich,
H. -H. Klauss,
M. Goiran,
J. -M. Broto,
H. Rakoto,
S. Demeshko,
G. Leibeling,
F. Meyer
Abstract:
Electron spin resonance and magnetization data in magnetic fields up to 55 T of a novel multicenter paramagnetic molecular complex [L_2Ni_4(N_3)(O_2C Ada)_4](Cl O_4) are reported. In this compound, four Ni centers each having a spin S = 1 are coupled in a single molecule via bridging ligands (including a μ_4-azide) which provide paths for magnetic exchange. Analysis of the frequency and temperat…
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Electron spin resonance and magnetization data in magnetic fields up to 55 T of a novel multicenter paramagnetic molecular complex [L_2Ni_4(N_3)(O_2C Ada)_4](Cl O_4) are reported. In this compound, four Ni centers each having a spin S = 1 are coupled in a single molecule via bridging ligands (including a μ_4-azide) which provide paths for magnetic exchange. Analysis of the frequency and temperature dependence of the ESR signals yields the relevant parameters of the spin Hamiltonian, in particular the single ion anisotropy gap and the g factor, which enables the calculation of the complex energy spectrum of the spin states in a magnetic field. The experimental results give compelling evidence for tuning the ground state of the molecule by magnetic field from a nonmagnetic state at small fields to a magnetic one in strong fields owing to the spin level crossing at a field of ~25 T.
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Submitted 6 May, 2006; v1 submitted 5 January, 2006;
originally announced January 2006.
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High-field ESR studies of the quantum spin magnet CaCu2O3
Authors:
M. Goiran,
M. Costes,
J. M. Broto,
F. C. Chou,
R. Klingeler,
E. Arushanov,
S. -L. Drechsler,
B. Büchner,
V. Kataev
Abstract:
We report an electron spin resonance (ESR) study of the s=1/2-Heisenberg pseudo-ladder magnet CaCu2O3 in pulsed magnetic fields up to 40 T. At sub-Terahertz frequencies we observe an ESR signal originating from a small amount of uncompensated spins residing presumably at the imperfections of the strongly antiferromagnetically correlated host spin lattice. The data give evidence that these few pe…
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We report an electron spin resonance (ESR) study of the s=1/2-Heisenberg pseudo-ladder magnet CaCu2O3 in pulsed magnetic fields up to 40 T. At sub-Terahertz frequencies we observe an ESR signal originating from a small amount of uncompensated spins residing presumably at the imperfections of the strongly antiferromagnetically correlated host spin lattice. The data give evidence that these few percent of ''extra'' spin states are coupled strongly to the bulk spins and are involved in the antiferromagnetic ordering at T_N = 25 K. By mapping the frequency/resonance field diagram we have determined a small gap for magnetic excitations below T_N of the order of 0.3 - 0.8 meV. Such a small value of the gap explains the occurrence of the spin-flop transition in CaCu2O 3 at weak magnetic fields H_{sf} ~ 3 T. Qualitative changes of the ESR response with increasing the field strength give indications that strong magnetic fields reduce the antiferromagnetic correlations and may even suppress the long-range magnetic order in CaCu2O3. ESR data support scenarios with a significant role of the ''extra'' spin states for the properties of low-dimensional quantum magnets.
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Submitted 24 April, 2006; v1 submitted 26 January, 2005;
originally announced January 2005.
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Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers
Authors:
I. Kuryliszyn-Kudelska,
T. Wojtowicz,
X. Liu,
J. K. Furdyna,
W. Dobrowolski,
J. Z. Domagala,
E. Lusakowska,
M. Goiran,
E. Haanappel,
O. Portugall
Abstract:
High-field magnetic measurements performed with the use of magnetooptical Kerr effect (MOKE) in the polar configuration as well as high-field and low-field magnetotransport studies were carried out on Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy, and subsequently annealed under various conditions. The structural investigations by means of high resolution XRD were also per…
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High-field magnetic measurements performed with the use of magnetooptical Kerr effect (MOKE) in the polar configuration as well as high-field and low-field magnetotransport studies were carried out on Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy, and subsequently annealed under various conditions. The structural investigations by means of high resolution XRD were also performed. We observe significant changes in magnetoresistivity curves, magnetization and strain introduced by the annealing.
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Submitted 28 April, 2003;
originally announced April 2003.
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Anomalous Hall Effect in SnMnEuTe and SnMnErTe mixed crystals
Authors:
K. Racka,
I. Kuryliszyn,
M. Arciszewska,
W. Dobrowolski,
J. -M. Broto,
M. Goiran,
O. Portugall,
H. Rakoto,
B. Raquet,
V. Dugaev,
E. I. Slynko,
V. E. Slynko
Abstract:
The Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS depends on temperature, its value decreases with the temperature increase. We observe that above ferromagnet-paramagnet transition temperature RS changes sign…
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The Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS depends on temperature, its value decreases with the temperature increase. We observe that above ferromagnet-paramagnet transition temperature RS changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of RS, particularly change of the sign.
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Submitted 15 July, 2002;
originally announced July 2002.
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Low temperature annealing studies of Ga1-xMnxAs
Authors:
I. Kuryliszyn,
T. Wojtowicz,
X. Liu,
J. K. Furdyna,
W. Dobrowolski,
J. -M. Broto,
M. Goiran,
O. Portugall,
H. Rakoto,
B. Raquet
Abstract:
High- and low-field magneto-transport measurements, as well as SQUID measurements of magnetization, were carried out on Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy, and subsequently annealed under various conditions. We observe a large enhancement of ferromagnetism when the samples are annealed at an optimal temperature, typically about 280 0C. Such optimal annealing lea…
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High- and low-field magneto-transport measurements, as well as SQUID measurements of magnetization, were carried out on Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy, and subsequently annealed under various conditions. We observe a large enhancement of ferromagnetism when the samples are annealed at an optimal temperature, typically about 280 0C. Such optimal annealing leads to an increase of Curie temperature, accompanied by an increase of both the conductivity and the saturation magnetization. A decrease of the coercive field and of magnetoresistivity is also observed for Ga1-xMnxAs annealed at optimal conditions. We suggest that the experimental results reported in this paper are related to changes in the domain structure of Ga1-xMnxAs.
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Submitted 15 July, 2002;
originally announced July 2002.
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Transport and magnetic properties of LT annealed Ga1-xMnxAs
Authors:
I. Kuryliszyn,
T. Wojtowicz,
X. Liu,
J. K. Furdyna,
W. Dobrowolski,
J. -M. Broto,
M. Goiran,
O. Portugall,
H. Rakoto,
B. Raquet
Abstract:
We present the results of low temperature (LT) annealing studies of Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy in a wide range of Mn concentrations (0.01<x<0.084). Transport measurements in low and high magnetic fields as well as SQUID measurements were performed on a wide range of samples, serving to establish optimal conditions of annealing. Optimal annealing procedur…
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We present the results of low temperature (LT) annealing studies of Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy in a wide range of Mn concentrations (0.01<x<0.084). Transport measurements in low and high magnetic fields as well as SQUID measurements were performed on a wide range of samples, serving to establish optimal conditions of annealing. Optimal annealing procedure succeeded in the Curie temperatures higher than 110K. The highest value of Curie temperature estimated from the maximum in the temperature dependence of zero-field resistivity (Tr) was 127K. It is generally observed that annealing leads to large changes in the magnetic and transport properties of GaMnAs in the very narrow range of annealing temperature close to the growth temperature.
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Submitted 19 June, 2002;
originally announced June 2002.
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Quantum Size Effect transition in percolating nanocomposite films
Authors:
B. Raquet,
M. Goiran,
N. Negre,
J. Leotin B. Aronzon,
V. Rylkov,
E. Meilikhov
Abstract:
We report on unique electronic properties in Fe-SiO2 nanocomposite thin films in the vicinity of the percolation threshold. The electronic transport is dominated by quantum corrections to the metallic conduction of the Infinite Cluster (IC). At low temperature, mesoscopic effects revealed on the conductivity, Hall effect experiments and low frequency electrical noise (random telegraph noise and…
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We report on unique electronic properties in Fe-SiO2 nanocomposite thin films in the vicinity of the percolation threshold. The electronic transport is dominated by quantum corrections to the metallic conduction of the Infinite Cluster (IC). At low temperature, mesoscopic effects revealed on the conductivity, Hall effect experiments and low frequency electrical noise (random telegraph noise and 1/f noise) strongly support the existence of a temperature-induced Quantum Size Effect (QSE) transition in the metallic conduction path. Below a critical temperature related to the geometrical constriction sizes of the IC, the electronic conductivity is mainly governed by active tunnel conductance across barriers in the metallic network. The high 1/f noise level and the random telegraph noise are consistently explained by random potential modulation of the barriers transmittance due to local Coulomb charges. Our results provide evidence that a lowering of the temperature is somehow equivalent to a decrease of the metal fraction in the vicinity of the percolation limit.
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Submitted 16 October, 2000;
originally announced October 2000.
