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Muonium state exchange dynamics in n-type Gallium Arsenide
Authors:
K. Yokoyama,
J. S. Lord,
P. W. Mengyan,
M. R. Goeks,
R. L. Lichti
Abstract:
Muonium (Mu), a pseudo-isotope atom of hydrogen with a positively charged muon at the place of the proton, can form in a wide range of semiconductor materials. They can appear in different states, depending on their charge state and microscopic site within a crystal lattice. After the Mu formation, they undergo interactions with free charge carriers, electronic spins, and other Mu sites, and form…
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Muonium (Mu), a pseudo-isotope atom of hydrogen with a positively charged muon at the place of the proton, can form in a wide range of semiconductor materials. They can appear in different states, depending on their charge state and microscopic site within a crystal lattice. After the Mu formation, they undergo interactions with free charge carriers, electronic spins, and other Mu sites, and form a dynamic network of state exchange. We identified the model of Mu dynamics in n-type Gallium Arsenide using the density matrix simulation and photoexcited muon spin spectroscopy technique. Fitting to the dark and illuminated $μ$SR data provided transition rates between Mu states, which in turn showed the underlying mechanism of the $μ$SR time spectra. Deduced capture/scattering cross sections of the Mu states reflected the microscopic dynamics of Mu. Illumination studies enable us to measure interactions between Mu and generated minority carriers, which are unavailable in dark measurements. The methodology we developed in this study can be applied to other semiconductor systems for a deeper microscopic understanding of the Mu state exchange dynamics.
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Submitted 9 May, 2023;
originally announced May 2023.
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$μ^+$ Knight Shift in UTe$_2$: Evidence for Relocalization in a Kondo Lattice
Authors:
N. Azari,
M. R. Goeks,
M. Yakovlev,
M. Abedi,
S. R. Dunsiger,
S. M. Thomas,
J. D. Thompson,
P. F. S. Rosa,
J. E. Sonier
Abstract:
The local magnetic susceptibility of the spin-triplet superconductor UTe$_2$ has been investigated by positive muon ($μ^+$) Knight shift measurements in the normal state. Three distinct $μ^+$ Knight shift components are observed for a magnetic field applied parallel to the $c$ axis. Two of these exhibit a breakdown in the linear relationship with the bulk magnetic susceptibility ($χ$) below a temp…
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The local magnetic susceptibility of the spin-triplet superconductor UTe$_2$ has been investigated by positive muon ($μ^+$) Knight shift measurements in the normal state. Three distinct $μ^+$ Knight shift components are observed for a magnetic field applied parallel to the $c$ axis. Two of these exhibit a breakdown in the linear relationship with the bulk magnetic susceptibility ($χ$) below a temperature $T^* \! \sim \! 30$ K, which points to a gradual emergence of a correlated Kondo liquid. Below $T_{\rm r} \! \sim \! 12$ K linearity is gradually restored, indicating partial relocalization of the Kondo liquid quasiparticles. The third Knight shift component is two orders of magnitude larger, and despite the $c$-axis alignment of the external field, scales with the $a$-axis $χ$ above $T_{\rm r} \! \sim \! 12$ K. We conjecture that this component is associated with magnetic clusters and the change in the temperature dependence of all three Knight shift components below $T_{\rm r}$ is associated with a change in magnetic correlations. Our findings indicate that prior to the onset of superconductivity the development of the itinerant heavy-electron fluid is halted by a gradual development of local U $5f$-moment fluctuations.
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Submitted 21 April, 2023;
originally announced April 2023.
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Muon probes of temperature-dependent charge carrier kinetics in semiconductors
Authors:
K. Yokoyama,
J. S. Lord,
P. W. Mengyan,
M. R. Goeks,
R. L. Lichti
Abstract:
We have applied the photoexcited muon spin spectroscopy technique (photo-$μ$SR) to intrinsic germanium with the goal of developing a new method for characterizing excess carrier kinetics in a wide range of semiconductors. Muon spin relaxation rates can be a unique measure of excess carrier density and utilized to investigate carrier dynamics. The obtained carrier lifetime spectrum can be modeled w…
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We have applied the photoexcited muon spin spectroscopy technique (photo-$μ$SR) to intrinsic germanium with the goal of developing a new method for characterizing excess carrier kinetics in a wide range of semiconductors. Muon spin relaxation rates can be a unique measure of excess carrier density and utilized to investigate carrier dynamics. The obtained carrier lifetime spectrum can be modeled with a simple diffusion equation to determine bulk recombination lifetime and carrier mobility. Temperature dependent studies of these parameters can reveal the recombination and diffusion mechanism.
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Submitted 18 June, 2019;
originally announced June 2019.
