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The structural stability of tungsten nanoparticles
Authors:
Laurent Pizzagalli,
Sandrine Brochard,
Julien Godet,
Julien Durinck
Abstract:
Motivated by contradicting reports in the literature, we have investigated the structural stability of tungsten nanoparticles using density functional theory calculations. The comparison of BCC, FCC, A15, disordered, and icosahedral configurations unequivocally shows that BCC is the energetically most stable structure when the number of atoms is greater than 40. A disordered structure is more stab…
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Motivated by contradicting reports in the literature, we have investigated the structural stability of tungsten nanoparticles using density functional theory calculations. The comparison of BCC, FCC, A15, disordered, and icosahedral configurations unequivocally shows that BCC is the energetically most stable structure when the number of atoms is greater than 40. A disordered structure is more stable for smaller sizes. This result conflicts with an earlier theoretical study on transition metal nanoparticles, based on a semi-empirical modeling of nanoparticles energetics [D. Tom{รก}nek et al., Phys. Rev. B \textbf{28}, 665 (1983)]. Examining this latter work in the light of our results suggests that an erroneous description of clusters geometry is the source of the discrepancy. Finally, we improve the accuracy of the semi-empirical model proposed in this work, which will be useful to calculate nanoparticle energies for larger sizes.
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Submitted 5 April, 2024;
originally announced April 2024.
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Ultra high strength and plasticity mechanisms of Si and SiC nanoparticles revealed by first principles molecular dynamics
Authors:
Laurent Pizzagalli,
Julien Godet
Abstract:
It is now well established that materials are stronger when their dimensions are reduced to submicron scale. However, what happens at dimensions such as a few tens of nanometers or lower remains largely unknown, with conflicting reports on strength or plasticity mechanisms. Here, we combined first principles molecular dynamics and classical force fields to investigate the mechanical properties of…
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It is now well established that materials are stronger when their dimensions are reduced to submicron scale. However, what happens at dimensions such as a few tens of nanometers or lower remains largely unknown, with conflicting reports on strength or plasticity mechanisms. Here, we combined first principles molecular dynamics and classical force fields to investigate the mechanical properties of 1-2 nm Si and SiC nanoparticles. These compression simulations unambiguously reveal that the strength continues to increase down to such sizes, and that in these systems the theoretical bulk strength can be reached or even exceeded in some cases. Most of the nanoparticles yield by amorphization at strains greater than 20%, with no evidence of beta-tin phase for Si. Original and unexpected mechanisms are also identified, such as the homogeneous formation of a dislocation loop embryo for the <111> compression of SiC nanoparticles, and an elastic softening for the <001> compression of Si nanoparticles.
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Submitted 17 October, 2023;
originally announced October 2023.
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Lithiation-delithiation cycles of amorphous Si nanowires investigated by molecular dynamics simulations
Authors:
Julien Godet,
Teute Bunjaku,
Mathieu Luisier
Abstract:
The atomistic mechanisms during lithiation and delithiation of amorphous Si nanowires ($a$-SiNW) have been investigated over cycles by molecular dynamics simulations. First, the Modified Embedded Atom Method (MEAM) potential from Cui et al. [J. Power Sources. 2012, (207) 150] has been further optimized on static (Li$_x$Si alloy phases and point defect energies) and on dynamic properties (Li diffus…
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The atomistic mechanisms during lithiation and delithiation of amorphous Si nanowires ($a$-SiNW) have been investigated over cycles by molecular dynamics simulations. First, the Modified Embedded Atom Method (MEAM) potential from Cui et al. [J. Power Sources. 2012, (207) 150] has been further optimized on static (Li$_x$Si alloy phases and point defect energies) and on dynamic properties (Li diffusion) to reproduce the lithiation of small crystalline Si nanowires calculated at the {\it ab initio} level. The lithiation of $a$-SiNW reveals a two-phase process of lithiation with a larger diffusion interface compared to crystalline Si lithiation. Compressive axial stresses are observed in the amorphous Si$_x$Li alloy outer shell. They are easily released thanks to the soft glassy behavior of the amorphous alloy. Conversely, in crystalline SiNW, the larger stress in the narrow crystalline lithiated interface is hardly released and requires a phase transformation to amorphous to operate, which delays the lithiation. The history of the charge-discharge cycles as well as the temperature appear as driving forces for phase transformation from amorphous Li$_x$Si alloy to the more stable crystalline phase counterpart. Our work suggest that a full delithiation could heal the SiNWs to improve the life cycles of Li-ion batteries with Si anode.
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Submitted 7 September, 2019;
originally announced September 2019.
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Glissile dislocations with transient cores in silicon
Authors:
Laurent Pizzagalli,
Julien Godet,
Sandrine Brochard
Abstract:
We report an unexpected characteristic of dislocation cores in silicon. Using first-principles calculations, we show that all the stable core configurations for a non-dissociated 60$^\circ$ dislocation are sessile. The only glissile configuration, previously obtained by nucleation from surfaces, surprinsingly corresponds to an unstable core. As a result, the 60$^\circ$ dislocation motion is sole…
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We report an unexpected characteristic of dislocation cores in silicon. Using first-principles calculations, we show that all the stable core configurations for a non-dissociated 60$^\circ$ dislocation are sessile. The only glissile configuration, previously obtained by nucleation from surfaces, surprinsingly corresponds to an unstable core. As a result, the 60$^\circ$ dislocation motion is solely driven by stress, with no thermal activation. We predict that this original feature could be relevant in situations for which large stresses occur, such as mechanical deformation at room temperature. Our work also suggests that post-mortem observations of stable dislocations could be misleading, and that mobile unstable dislocation cores should be taken into account in theoretical investigations.
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Submitted 21 September, 2009;
originally announced September 2009.
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Theoretical study of dislocation nucleation from simple surface defects in semiconductors
Authors:
Julien Godet,
Laurent Pizzagalli,
Sandrine Brochard,
Pierre Beauchamp
Abstract:
Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Although the elastic limits of systems with surface defects remain close to the theoretical strength, the results show that these defects weaken the atomic structure, initializing plastic deformations, in particular dislocati…
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Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Although the elastic limits of systems with surface defects remain close to the theoretical strength, the results show that these defects weaken the atomic structure, initializing plastic deformations, in particular dislocations. The character of the dislocation nucleated can be predicted considering both the resolved shear stress related to the applied stress orientation and the Peierls stress. At low temperature, only glide events in the shuffle set planes are observed. Then they progressively disappear and are replaced by amorphization/melting zones at a temperature higher than 900 K.
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Submitted 11 September, 2007;
originally announced September 2007.
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Comparison between classical potentials and ab initio for silicon under large shear
Authors:
Julien Godet,
Laurent Pizzagalli,
Sandrine Brochard,
Pierre Beauchamp
Abstract:
The homogeneous shear of the {111} planes along the <110> direction of bulk silicon has been investigated using ab initio techniques, to better understand the strain properties of both shuffle and glide set planes. Similar calculations have been done with three empirical potentials, Stillinger-Weber, Tersoff and EDIP, in order to find the one giving the best results under large shear strains. Th…
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The homogeneous shear of the {111} planes along the <110> direction of bulk silicon has been investigated using ab initio techniques, to better understand the strain properties of both shuffle and glide set planes. Similar calculations have been done with three empirical potentials, Stillinger-Weber, Tersoff and EDIP, in order to find the one giving the best results under large shear strains. The generalized stacking fault energies have also been calculated with these potentials to complement this study. It turns out that the Stillinger-Weber potential better reproduces the ab initio results, for the smoothness and the amplitude of the energy variation as well as the localization of shear in the shuffle set.
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Submitted 11 September, 2007;
originally announced September 2007.
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Surface step effects on Si (100) under uniaxial tensile stress, by atomistic calculations
Authors:
Julien Godet,
Laurent Pizzagalli,
Sandrine Brochard,
Pierre Beauchamp
Abstract:
This paper reports a study of the influence of the step at a silicon surface under an uniaxial tensile stress, using an empirical potential. Our aim was to find conditions leading to nucleation of dislocations from the step. We obtained that no dislocations could be generated with such conditions. This behaviour, different from the one predicted for metals, could be attributed either to the cova…
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This paper reports a study of the influence of the step at a silicon surface under an uniaxial tensile stress, using an empirical potential. Our aim was to find conditions leading to nucleation of dislocations from the step. We obtained that no dislocations could be generated with such conditions. This behaviour, different from the one predicted for metals, could be attributed either to the covalent bonding or to the cubic diamond structure.
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Submitted 11 September, 2007;
originally announced September 2007.
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Dislocation formation from a surface step in semiconductors: an ab initio study
Authors:
Julien Godet,
Sandrine Brochard,
Laurent Pizzagalli,
Pierre Beauchamp,
Jose M. Soler
Abstract:
The role of a simple surface defect, such as a step, for relaxing the stress applied to a semiconductor, has been investigated by means of large scale first principles calculations. Our results indicate that the step is the privileged site for initiating plasticity, with the formation and glide of 60$^\circ$ dislocations for both tensile and compressive deformations. We have also examined the ef…
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The role of a simple surface defect, such as a step, for relaxing the stress applied to a semiconductor, has been investigated by means of large scale first principles calculations. Our results indicate that the step is the privileged site for initiating plasticity, with the formation and glide of 60$^\circ$ dislocations for both tensile and compressive deformations. We have also examined the effect of surface and step termination on the plastic mechanisms.
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Submitted 11 September, 2007;
originally announced September 2007.
