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Extension of the one-dimensional Stoney algorithm to a two-dimensional case
Authors:
Zenon Gniazdowski
Abstract:
This article presents the extension of the one-dimensional Stoney algorithm to a two-dimensional case. The proposed extension consists in modifying the method of curvature estimation. The surface profile of the wafer before deposition of the thin film and after its deposition was locally approximated by the quadric. From this quadric, a quadratic form and the first degree surface were separated. A…
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This article presents the extension of the one-dimensional Stoney algorithm to a two-dimensional case. The proposed extension consists in modifying the method of curvature estimation. The surface profile of the wafer before deposition of the thin film and after its deposition was locally approximated by the quadric. From this quadric, a quadratic form and the first degree surface were separated. An eigenproblem was solved for the matrix of this quadratic form. From eigenvectors a new coordinate system was created in which a new formula of the quadric was found. In this new coordinate system, the two-dimensional problem of estimating the curvature tensor has been solved by solving two independent one-dimensional problems of curvature estimation. Returning to the primary coordinate system, in this primary coordinate system, a solution to the two-dimensional problem was obtained. The article proposed five versions of the two-dimensional Stoney algorithm, with diverse complexity and accuracy. The recommendation for the version of the algorithm that could be practically used was also presented.
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Submitted 7 September, 2019;
originally announced September 2019.
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Modeling of gas sample behavior in gas chromatography column
Authors:
Zenon Gniazdowski,
Pawel Kowalski
Abstract:
The equilibrium-dispersive model of the linear GC (gas chromatography) was derived using both assumptions and the method of its derivation different from the known in literature. It was concluded that this model is a specific case of the Fokker-Planck equation for diffusion with drift. The resolution of this derived equation for assumed initial conditions is the normal distribution with movable me…
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The equilibrium-dispersive model of the linear GC (gas chromatography) was derived using both assumptions and the method of its derivation different from the known in literature. It was concluded that this model is a specific case of the Fokker-Planck equation for diffusion with drift. The resolution of this derived equation for assumed initial conditions is the normal distribution with movable mean value. At the end of the GC column the standard deviation of this distribution was investigated as a factor of the sample shape. This standard deviation is independent of the retention factor.
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Submitted 8 January, 2016;
originally announced May 2016.
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New approach to exact extraction of piezoresistance coefficient
Authors:
Zenon Gniazdowski,
Bogdan Latecki,
Pawel Kowalski
Abstract:
The extension of piezoresistance coefficient extraction method was proposed, for protection from errors in estimation of the thickness of the test structure membrane. This new approach requires finding models of elements of matrix of integrated stresses as functions of the membrane thickness. Additionally, two test structures with different thickness of the membrane have to be used. This improved…
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The extension of piezoresistance coefficient extraction method was proposed, for protection from errors in estimation of the thickness of the test structure membrane. This new approach requires finding models of elements of matrix of integrated stresses as functions of the membrane thickness. Additionally, two test structures with different thickness of the membrane have to be used. This improved method gives the more credible estimation of piezoresistance coefficients $π_L$ and $π_T$ and the thickness of the membranes of the used test structures.
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Submitted 8 January, 2016;
originally announced January 2016.
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Conditioning of Piezoresistance Coefficient Extraction
Authors:
Zenon Gniazdowski,
Jan Koszur,
Pawel Kowalski
Abstract:
The necessary and sufficient condition for the piezoresistance coefficient extraction and conditioning of the extraction problem are considered as a problem of the certain matrix A. This matrix is implied by the stress distribution on the certain test structure. For the given test structure matrix A was calculated and the condition number was estimated. Obtained value of condition number shows tha…
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The necessary and sufficient condition for the piezoresistance coefficient extraction and conditioning of the extraction problem are considered as a problem of the certain matrix A. This matrix is implied by the stress distribution on the certain test structure. For the given test structure matrix A was calculated and the condition number was estimated. Obtained value of condition number shows that proposed test structure gives well-conditioned matrix A. Both the geometrical analysis and numerical estimation of condition number shows that the problem of extraction is well-conditioned and the test structure is properly designed. For the given condition number the error propagation of the input data was considered. For assumed levels of the input data errors, the relative error of piezoresistance coefficient is less than 8%.
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Submitted 8 January, 2016;
originally announced January 2016.
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Behavioral modeling of stressed MOSFET
Authors:
Zenon Gniazdowski
Abstract:
In this paper piezoconductivity phenomenon in MOSFET channel is discussed and extension of drain current model with possibility of stress consideration is proposed. Analysis of obtained model combined with examination of stress components inherent in the MOSFET channel as well as distributions of specific piezoconductance coefficients on a plane of channel can show which directions of transistor c…
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In this paper piezoconductivity phenomenon in MOSFET channel is discussed and extension of drain current model with possibility of stress consideration is proposed. Analysis of obtained model combined with examination of stress components inherent in the MOSFET channel as well as distributions of specific piezoconductance coefficients on a plane of channel can show which directions of transistor channel are desirable for improvement of MOSFET performances. This model gives possibility to predict optimal transistor channel orientation, for the given stress state in MOSFET channel. Possible simplification of this model is considered. In particular, stress state and significant piezoconductance coefficient distributions on planes {100}, {110} as well as {111} are analyzed. For assumed particular cases of stress state in the channel, final models of MOSFT for considered specific planes are given.
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Submitted 9 November, 2017; v1 submitted 8 January, 2016;
originally announced January 2016.
