Showing 1–50 of 101 results for author: Giustino, F

Design of high-mobility p-type GaN via the piezomobility tensor

Authors: Jie-Cheng Chen, Joshua Leveillee, Chris G. Van de Walle, Feliciano Giustino

Abstract: Gallium nitride (GaN) is a wide-bandgap semiconductor of significant interest for applications in solid-state lighting, power electronics, and radio-frequency amplifiers. An important limitation of this semiconductor is its low intrinsic hole mobility, which hinders the development of \textit{p}-channel devices and the large-scale integration of GaN CMOS in next-generation electronics. Prior resea… ▽ More Gallium nitride (GaN) is a wide-bandgap semiconductor of significant interest for applications in solid-state lighting, power electronics, and radio-frequency amplifiers. An important limitation of this semiconductor is its low intrinsic hole mobility, which hinders the development of \textit{p}-channel devices and the large-scale integration of GaN CMOS in next-generation electronics. Prior research has explored the use of strain to improve the hole mobility of GaN, but a systematic analysis of all possible strain conditions and their impact on the mobility is lacking. In this study, we introduce a piezomobility tensor notation to characterize the relationship between applied strain and hole mobility in GaN. To map the strain-dependence of the hole mobility, we solve the \textit{ab initio} Boltzmann transport equation, accounting for electron-phonon scattering and GW quasiparticle energy corrections. We show that there exist three optimal strain configurations, two uniaxial strains and one shear strain, that can lead to significant mobility enhancement. In particular, we predict room-temperature hole mobility of up to 164~\mob\ for 2\% uniaxial compression and 148~\mob\ for 2\% shear strain. Our methodology provides a general framework for investigating strain effects on the transport properties of semiconductors from first principles. △ Less

Submitted 8 August, 2025; originally announced August 2025.

Roadmap for electronic structure, anharmonicity, and electron-phonon calculations in locally disordered inorganic and hybrid halide perovskites

Authors: Marios Zacharias, George Volonakis, Laurent Pedesseau, Claudine Katan, Feliciano Giustino, Jacky Even

Abstract: The role of data in modern materials science becomes more valuable and accurate when effects such as electron-phonon coupling and anharmonicity are included, providing a more realistic representation of finite-temperature material behavior. Furthermore, positional polymorphism, characterized by correlated local atomic disorder usually not reported by standard diffraction techniques, is a critical… ▽ More The role of data in modern materials science becomes more valuable and accurate when effects such as electron-phonon coupling and anharmonicity are included, providing a more realistic representation of finite-temperature material behavior. Furthermore, positional polymorphism, characterized by correlated local atomic disorder usually not reported by standard diffraction techniques, is a critical yet underexplored factor in understanding the electronic structure and transport properties of energy-efficient materials, like halide perovskites. In this manuscript, we present a first-principles methodology for locally disordered (polymorphous) cubic inorganic and hybrid halide perovskites, rooted in the special displacement method, that offers a systematic and alternative approach to molecular dynamics for exploring finite-temperature properties. By enabling a unified and efficient treatment of anharmonic lattice dynamics, electron-phonon coupling, and positional polymorphism, our approach generates essential data to predict temperature-dependent phonon properties, free energies, band gaps, and effective masses. Designed with a high-throughput spirit, this framework has been applied across a range of inorganic and hybrid halide perovskites: CsPbI3, CsPbBr3, CsSnI3, CsPbCl3, MAPbI3, MAPbBr3, MASnI3, MAPbCl3, FAPbI3, FAPbBr3, FASnI3, and FAPbCl3. We provide a comprehensive comparison between theoretical and experimental results and we systematically uncover trends and insights into their electronic and thermal behavior. For all compounds, we demonstrate strong and consistent correlations between local structural disorder, band gap openings, and effective mass enhancements. △ Less

Submitted 12 June, 2025; originally announced June 2025.

Electron-phonon couplings in locally disordered materials: The case of hybrid halide perovskites

Authors: Marios Zacharias, George Volonakis, Laurent Pedesseau, Claudine Katan, Feliciano Giustino, Jacky Even

Abstract: Positional polymorphism in solids refers to distributions of correlated locally disordered unit cells which reflect, on average, the high-symmetry structure observed in diffraction experiments. The standard theory of electron-phonon interactions is unable to account for the temperature-dependent electronic structure of polymorphous materials. A prime example of such materials is hybrid halide pero… ▽ More Positional polymorphism in solids refers to distributions of correlated locally disordered unit cells which reflect, on average, the high-symmetry structure observed in diffraction experiments. The standard theory of electron-phonon interactions is unable to account for the temperature-dependent electronic structure of polymorphous materials. A prime example of such materials is hybrid halide perovskites, for which calculations of band gaps at finite temperatures do not agree with experiment. Here, we develop a systematic and accurate methodology to investigate electron-phonon couplings in complex polymorphous materials, demonstrated through calculations of anharmonic phonons and thermally-induced band gap renormalization for a broad family of halide perovskites. Our approach delivers unprecedented agreement with experiment. △ Less

Submitted 11 June, 2025; originally announced June 2025.

Electron mobility in AlN from first principles

Authors: Amanda Wang, Nick Pant, Woncheol Lee, Jie-Cheng Chen, Feliciano Giustino, Emmanouil Kioupakis

Abstract: Aluminum nitride is a promising ultra-wide band gap semiconductor for optoelectronics and power electronics. However, its practical applications have been limited by challenges with doping and achieving high electrical conductivity. Recent advances in crystal quality and defect control have led to improvements in experimentally measured mobilities. In this work, we apply first-principles calculati… ▽ More Aluminum nitride is a promising ultra-wide band gap semiconductor for optoelectronics and power electronics. However, its practical applications have been limited by challenges with doping and achieving high electrical conductivity. Recent advances in crystal quality and defect control have led to improvements in experimentally measured mobilities. In this work, we apply first-principles calculations to determine the upper limits of the electron mobility in AlN as a function of temperature, doping, and crystallographic orientation. We account for the combined effects of electron scattering by phonons and ionized impurity to model doped systems, and examine both full and partial ionization conditions. Our results show that the piezoelectric interaction from the long-range component of the acoustic modes is the dominant source of electron-phonon scattering at room temperature. Ionized-impurity scattering starts to dominate scattering at dopant concentrations above $10^{16}$ cm$^{-3}$, reducing the mobility by more than an order of magnitude in the high doping regime. Our calculated Hall mobility values are in good agreement with experimental data for samples with comparable dopant concentrations. We also find that electron mobilities as high as $956$ cm$^2$/V$\cdot$s could be achievable at lower dopant concentrations. △ Less

Submitted 10 June, 2025; originally announced June 2025.

Comments: 18 pages, 2 figures in main text, 2 in supplementary

Extreme-Band-Gap Semiconductors with Shallow Dopants and Mobile Carriers

Authors: Sieun Chae, Nocona Sanders, Kelsey A. Mengle, Amanda Wang, Xiao Zhang, Jon Lafuente Bartolome, Kaifa Luo, Yen-Chun Huang, Feliciano Giustino, John T. Heron, Emmanouil Kioupakis

Abstract: The conventional distinction between semiconductors and insulators is often based on the magnitude of the band gap, with materials exhibiting gaps wider than 3 eV typically classified as insulators. However, the emergence of ultra-wide-band-gap (UWBG) semiconductors such as AlGaN, diamond, BN, and Ga2O3 challenges this paradigm for materials classification and raises fundamental questions about th… ▽ More The conventional distinction between semiconductors and insulators is often based on the magnitude of the band gap, with materials exhibiting gaps wider than 3 eV typically classified as insulators. However, the emergence of ultra-wide-band-gap (UWBG) semiconductors such as AlGaN, diamond, BN, and Ga2O3 challenges this paradigm for materials classification and raises fundamental questions about the upper bound of band gaps compatible with semiconducting behavior. Here we develop a computational-discovery strategy to identify semiconductors with band gaps exceeding that of AlN (6.2 eV), while retaining essential semiconducting properties such as shallow dopants and mobile charge carriers. We discover that materials composed of light elements in densely packed crystal structures exhibit wide band gaps and light carrier effective masses that enable shallow dopants, high mobility, and weak polaron binding. By applying the hydrogenic Bohr model and first-principles defect calculations - validated against available experimental data - to screen for materials with shallow dopants, we identify dopable compounds with gaps as wide as 9.5 eV that nonetheless host mobile charge carriers. Our findings demonstrate that semiconducting behavior persists even at extreme band gaps, far beyond conventional upper bounds traditionally associated with semiconductor materials. △ Less

Submitted 8 June, 2025; originally announced June 2025.

First-principles electron-phonon interactions with self-consistent Hubbard interaction: an application to transparent conductive oxides

Authors: Wooil Yang, Sabyasachi Tiwari, Feliciano Giustino, Young-Woo Son

Abstract: The ab initio computational method known as Hubbard-corrected density functional theory (DFT+$U$) captures well ground electronic structures of a set of solids that are poorly described by standard DFT alone. Since lattice dynamical properties are closely linked to electronic structures, the Hubbard-corrected density functional perturbation theory (DFPT+$U$) can calculate them at the same level of… ▽ More The ab initio computational method known as Hubbard-corrected density functional theory (DFT+$U$) captures well ground electronic structures of a set of solids that are poorly described by standard DFT alone. Since lattice dynamical properties are closely linked to electronic structures, the Hubbard-corrected density functional perturbation theory (DFPT+$U$) can calculate them at the same level of accuracy. To investigate the effects of $U$ on electron-phonon (el-ph) interactions, we implemented DFPT+$U$ with a Hartree-Fock-based pseudohybrid functional formalism to determine $U$ self-consistently and applied our method to compute optical and transport properties of transparent conductive oxides of CdO and ZnO. For CdO, we find that opening a band gap due to $U$ restores the long-range Fröhlich interaction and that its calculated mobility and absorption spectrum are in excellent agreement with experiments. For ZnO where a band gap already appears at the DFT level, DFPT+$U$ brings the results into much closer alignment with experiment, thus demonstrating improved accuracy of our method in dealing with el-ph interactions in these technologically important materials. △ Less

Submitted 16 June, 2025; v1 submitted 13 May, 2025; originally announced May 2025.

Comments: 16 pages, 11 figures

High-throughput screening of 2D materials identifies p-type monolayer WS$_2$ as potential ultra-high mobility semiconductor

Authors: Viet-Anh Ha, Feliciano Giustino

Abstract: 2D semiconductors offer a promising pathway to replace silicon in next-generation electronics. Among their many advantages, 2D materials possess atomically-sharp surfaces and enable scaling the channel thickness down to the monolayer limit. However, these materials exhibit comparatively lower charge carrier mobility and higher contact resistance than 3D semiconductors, making it challenging to rea… ▽ More 2D semiconductors offer a promising pathway to replace silicon in next-generation electronics. Among their many advantages, 2D materials possess atomically-sharp surfaces and enable scaling the channel thickness down to the monolayer limit. However, these materials exhibit comparatively lower charge carrier mobility and higher contact resistance than 3D semiconductors, making it challenging to realize high-performance devices at scale. In this work, we search for high-mobility 2D materials by combining a high-throughput screening strategy with state-of-the-art calculations based on the ab initio Boltzmann transport equation. Our analysis singles out a known transition metal dichalcogenide, monolayer WS$_2$, as the most promising 2D semiconductor, with the potential to reach ultra-high room-temperature hole mobilities in excess of 1300 cm$^2$/Vs should Ohmic contacts and low defect densities be achieved. Our work also highlights the importance of performing full-blown ab initio transport calculations to achieve predictive accuracy, including spin-orbital couplings, quasiparticle corrections, dipole and quadrupole long-range electron-phonon interactions, as well as scattering by point defects and extended defects. △ Less

Submitted 22 April, 2025; originally announced April 2025.

Journal ref: npj Computational Materials 10, 229 (2024)

Robust Super-Moiré in Large Angle Single-Twist Bilayers

Authors: Yanxing Li, Chuqiao Shi, Fan Zhang, Xiaohui Liu, Yuan Xue, Viet-Anh Ha, Qiang Gao, Chengye Dong, Yu-chuan Lin, Luke N Holtzman, Nicolas Morales-Durán, Hyunsue Kim, Yi Jiang, Madisen Holbrook, James Hone, Katayun Barmak, Joshua Robinson, Xiaoqin Li, Feliciano Giustino, Eslam Khalaf, Yimo Han, Chih-Kang Shih

Abstract: Forming long wavelength moiré superlattices (MSL) at small-angle twist van der Waals (vdW) bilayers has been a key approach to creating moiré flat bands. The small-angle twist, however, leads to strong lattice reconstruction, causing domain walls and moiré disorders, which pose considerable challenges in engineering such platforms. At large twist angles, the rigid lattices render a more robust, bu… ▽ More Forming long wavelength moiré superlattices (MSL) at small-angle twist van der Waals (vdW) bilayers has been a key approach to creating moiré flat bands. The small-angle twist, however, leads to strong lattice reconstruction, causing domain walls and moiré disorders, which pose considerable challenges in engineering such platforms. At large twist angles, the rigid lattices render a more robust, but shorter wavelength MSL, making it difficult to engineer flat bands. Here, we depict a novel approach to tailoring robust super-moiré (SM) structures that combines the advantages of both small-twist and large-twist transition metal dichalcogenides (TMDs) bilayers using only a single twist angle near a commensurate angle. Structurally, we unveil the spontaneous formation of a periodic arrangement of three inequivalent commensurate moiré (CM) stacking, where the angle deviation from the commensurate angle can tune the periodicity. Electronically, we reveal a large set of van Hove singularities (VHSs) that indicate strong band hybridization, leading to flat bands near the valence band maximum. Our study paves the way for a new platform of robust SM bilayers with structural rigidity and controllable wavelength, extending the investigation of the interplay among band topology, quantum geometry, and moiré superconductivity to the large twist angle regime. △ Less

Submitted 24 February, 2025; v1 submitted 17 February, 2025; originally announced February 2025.

Towards MatCore: A Unified Metadata Standard for Materials Science

Authors: Jane Greenberg, Pamela Boveda-Aguirre, John Allison, Pietro Asinari, Maria Chan, Anand Chandrasekaran, Elif Ertekin, Emmanouel Garoufallou, Giulia Galli, Paolo Giannozzi, Feliciano Giustino, Gerhard Goldbeck, Hendrik Heinz, Arthi Jayaraman, Vincenzo Lordi, Kristin A. Persson, Gian-Marco Rignanese, Aidan Thompson, Eric Toberer, Scott McClellan, Ellad B. Tadmor

Abstract: The materials science community seeks to support the FAIR principles for computational simulation research. The MatCore Project was recently launched to address this need, with the goal of developing an overall metadata framework and accompanying guidelines. This paper reports on the MatCore goals and overall progress. Historical background context is provided, including a review of the principles… ▽ More The materials science community seeks to support the FAIR principles for computational simulation research. The MatCore Project was recently launched to address this need, with the goal of developing an overall metadata framework and accompanying guidelines. This paper reports on the MatCore goals and overall progress. Historical background context is provided, including a review of the principles underlying successful core metadata standards. The paper also presents selected MatCore examples and discusses future plans. △ Less

Submitted 10 February, 2025; originally announced February 2025.

Comments: 11 pages, 5 figures, Conference Paper

Quantum oscillations of holes in GaN

Authors: Chuan F. C. Chang, Joseph E. Dill, Zexuan Zhang, Jie-Cheng Chen, Naomi Pieczulewski, Samuel J. Bader, Oscar Ayala Valenzuela, Scott A. Crooker, Fedor F. Balakirev, Ross D. McDonald, Jimy Encomendero, David A. Muller, Feliciano Giustino, Debdeep Jena, Huili Grace Xing

Abstract: GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, hindering fundamental studies of valence bands and hole transpor… ▽ More GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, hindering fundamental studies of valence bands and hole transport in GaN. Here, we present the first observation of quantum oscillations of holes in GaN. Shubnikov-de Haas (SdH) oscillations in hole resistivity are observed in a quantum-confined two-dimensional hole gas at a GaN/AlN interface, where polarization-induced doping overcomes thermal freeze-out, and a sharp and clean interface boosts the hole mobility enough to unmask the quantum oscillations. These holes degenerately occupy the light and heavy hole bands of GaN and have record-high mobilities of ~1900 cm2/Vs and ~400 cm2/Vs at 3K, respectively. We use magnetic fields up to 72 T to resolve SdH oscillations of holes from both valence bands to extract their respective sheet densities, quantum scattering times, and the effective masses of light holes (0.5-0.7 m0) and heavy holes (1.9 m0). SdH oscillations of heavy and light holes in GaN constitute a direct metrology of valence bands and open new venues for quantum engineering in this technologically important semiconductor. Like strained silicon transistors, strain-engineering of the valence bands of GaN is predicted to dramatically improve hole mobilities by reducing the hole effective mass, a proposal that can now be explored experimentally, particularly in a fully fabricated transistor, using quantum oscillations. Furthermore, the findings of this work suggest a blueprint to create 2D hole gases and observe quantum oscillations of holes in related wide bandgap semiconductors such as SiC and ZnO in which such techniques are not yet possible. △ Less

Submitted 27 January, 2025; originally announced January 2025.

Identification of large polarons and exciton polarons in rutile and anatase polymorphs of titanium dioxide

Authors: Zhenbang Dai, Feliciano Giustino

Abstract: Titanium dioxide (TiO2) is a wide-gap semiconductor with numerous applications in photocatalysis, photovoltaics, and neuromorphic computing. The unique functional properties of this material critically depend on its ability to transport charge in the form of polarons, namely narrow electron wavepackets accompanied by local distortions of the crystal lattice. It is currently well established that t… ▽ More Titanium dioxide (TiO2) is a wide-gap semiconductor with numerous applications in photocatalysis, photovoltaics, and neuromorphic computing. The unique functional properties of this material critically depend on its ability to transport charge in the form of polarons, namely narrow electron wavepackets accompanied by local distortions of the crystal lattice. It is currently well established that the most important polymorphs of TiO2, the rutile and anatase phases, harbor small electron polarons and small hole polarons, respectively. However, whether additional polaronic species exist in TiO2, and under which conditions, remain open questions. Here, we provide definitive answers to these questions by exploring the rich landscape of polaron quasiparticles in TiO2 via recently developed ab initio techniques. In addition to the already known small polarons, we identify three novel species, namely a large hole polaron in rutile, a large quasi-two-dimensional electron polaron in anatase, and a large exciton polaron in anatase. These findings complete the puzzle on the polaorn physics of TiO2 and pave the way for systematically probing and manipulating polarons in a broad class of complex oxides and quantum materials. △ Less

Submitted 22 November, 2024; originally announced November 2024.

Journal ref: Proc. Natl. Acad. Sci. U.S.A. 121 (48) e2414203121 (2024)

Effects of Spin-Orbit Coupling and Thermal Expansion on the Phonon-limited Resistivity of Pb from First Principles

Authors: Félix Antoine Goudreault, Samuel Poncé, Feliciano Giustino, Michel Côté

Abstract: Using density functional theory calculations with spin-orbit coupling (SOC), we report on the temperature-dependent thermodynamical properties of Pb: electrical resistivity, thermal expansion (TE), heat capacity, bulk modulus and its pressure derivative. For the former, we employed the state-of-the-art ab initio Boltzmann Transport Equation formalism, and we calculated the effect of TE. In accorda… ▽ More Using density functional theory calculations with spin-orbit coupling (SOC), we report on the temperature-dependent thermodynamical properties of Pb: electrical resistivity, thermal expansion (TE), heat capacity, bulk modulus and its pressure derivative. For the former, we employed the state-of-the-art ab initio Boltzmann Transport Equation formalism, and we calculated the effect of TE. In accordance with previous work, we show that SOC improves the description of the phonon dispersion and the resistivity. We argue that this is caused by a joint mutual effect of an increase in the electronic nesting and an increase in the electron-phonon coupling. Interestingly, including TE incorporates non-linearity into the resistivity at high temperatures, whose magnitude depends on whether SOC is included or not. We suggest that mechanisms beyond the quasi-harmonic approximation should be considered to get a better description of Pb with SOC at high temperatures. △ Less

Submitted 11 March, 2025; v1 submitted 26 October, 2024; originally announced October 2024.

Comments: 15 pages, 10 figures

Electron Mobilities in SrTiO$_3$ and KTaO$_3$: Role of Phonon Anharmonicity, Mass Renormalization and Disorder

Authors: Luigi Ranalli, Carla Verdi, Marios Zacharias, Jacky Evens, Feliciano Giustino, Cesare Franchini

Abstract: Accurately predicting carrier mobility in strongly anharmonic solids necessitates a precise characterization of lattice dyndamics as a function of temperature. We achieve consistency with experimental electron mobility data for bulk KTaO$_3$ and SrTiO$_3$ above 150 K by refining the Boltzmann transport equations. This refinement includes incorporating temperature-dependent anharmonic phonon eigenf… ▽ More Accurately predicting carrier mobility in strongly anharmonic solids necessitates a precise characterization of lattice dyndamics as a function of temperature. We achieve consistency with experimental electron mobility data for bulk KTaO$_3$ and SrTiO$_3$ above 150 K by refining the Boltzmann transport equations. This refinement includes incorporating temperature-dependent anharmonic phonon eigenfrequencies and eigenmodes into the electron-phonon interaction tensor, while maintaining the derivatives of the Kohn-Sham potential as computed in density functional perturbation theory. Using efficient machine-learned force fields and the stochastic self-consistent harmonic approximation, we accurately compute the dynamical matrices. At room temperature, the calculated mobility for SrTiO$_3$ exceeds experimental values by an order of magnitude, whereas the overestimation for KTaO$_3$ is way less pronounced. This discrepancy is explained through the more significant electron mass renormalization near the conduction band bottom due to anharmonic electron-phonon coupling and the presence of local disorder in SrTiO$_3$. △ Less

Submitted 26 July, 2024; originally announced July 2024.

Topological polarons in halide perovskites

Authors: Jon Lafuente-Bartolome, Chao Lian, Feliciano Giustino

Abstract: Halide perovskites emerged as a revolutionary family of high-quality semiconductors for solar energy harvesting and energy-efficient lighting. There is mounting evidence that the exceptional optoelectronic properties of these materials could stem from unconventional electron-phonon couplings, and it has been suggested that the formation of polarons and self-trapped excitons could be key to underst… ▽ More Halide perovskites emerged as a revolutionary family of high-quality semiconductors for solar energy harvesting and energy-efficient lighting. There is mounting evidence that the exceptional optoelectronic properties of these materials could stem from unconventional electron-phonon couplings, and it has been suggested that the formation of polarons and self-trapped excitons could be key to understanding such properties. By performing first-principles simulations with unprecedented detail across the length scales, here we show that halide perovskites harbor a uniquely rich variety of polaronic species, including small polarons, large polarons, and charge density waves, and we explain a variety of experimental observations. We find that these emergent quasiparticles support topologically nontrivial phonon fields with quantized topological charge, making them the first non-magnetic analog of the helical Bloch points found in magnetic skyrmion lattices. △ Less

Submitted 21 May, 2024; originally announced May 2024.

Journal ref: Proc. Natl. Acad. Sci. U.S.A. 121, e2318151121 (2024)

Intrinsic Limits of Charge Carrier Mobilities in Layered Halide Perovskites

Authors: Bruno Cucco, Joshua Leveillee, Viet-Anh Ha, Jacky Even, Mikaël Kepenekian, Feliciano Giustino, George Volonakis

Abstract: Layered halide perovskites have emerged as potential alternatives to three-dimensional halide perovskites due to their improved stability and larger material phase space, allowing fine-tuning of structural, electronic, and optical properties. However, their charge carrier mobilities are significantly smaller than that of three-dimensional halide perovskites, which has a considerable impact on thei… ▽ More Layered halide perovskites have emerged as potential alternatives to three-dimensional halide perovskites due to their improved stability and larger material phase space, allowing fine-tuning of structural, electronic, and optical properties. However, their charge carrier mobilities are significantly smaller than that of three-dimensional halide perovskites, which has a considerable impact on their application in optoelectronic devices. Here, we employ state-of-the-art ab initio approaches to unveil the electron-phonon mechanisms responsible for the diminished transport properties of layered halide perovskites. Starting from a prototypical ABX$_{3}$ halide perovskite, we model the case of $n=1$ and $n=2$ layered structures and compare their electronic and transport properties to the three-dimensional reference. The electronic and phononic properties are investigated within density functional theory (DFT) and density functional perturbation theory (DFPT), while transport properties are obtained via the ab initio Boltzmann transport equation. The vibrational modes contributing to charge carrier scattering are investigated and associated with polar-phonon scattering mechanisms arising from the long-range Fröhlich coupling and deformation potential scattering processes. Our investigation reveals that the lower mobilities in layered systems primarily originates from the increased electronic density of states at the vicinity of the band edges, while the electron-phonon coupling strength remains similar. Such increase is caused by the dimensionality reduction and the break in octahedra connectivity along the stacking direction. Our findings provide a fundamental understanding of the electron-phonon coupling mechanisms in layered perovskites and highlight the intrinsic limitations of the charge carrier transport in these materials. △ Less

Submitted 28 June, 2024; v1 submitted 19 April, 2024; originally announced April 2024.

Journal ref: PRX Energy 3 (2024) 023012

Electron mobility of SnO2 from first principles

Authors: Amanda Wang, Kyle Bushick, Nick Pant, Woncheol Lee, Xiao Zhang, Joshua Leveillee, Feliciano Giustino, Samuel Poncé, Emmanouil Kioupakis

Abstract: The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and doping concentrations. In this work, we calculate the electron mobility of SnO2 from first principles to examine the… ▽ More The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and doping concentrations. In this work, we calculate the electron mobility of SnO2 from first principles to examine the temperature- and doping-concentration dependence, and to elucidate the scattering mechanisms that limit transport. We include both electron-phonon scattering and electron-ionized impurity scattering to accurately model scattering in a doped semiconductor. We find a strongly anisotropic mobility that favors transport in the direction parallel to the c-axis. At room temperature and intrinsic carrier concentrations, the low-energy polar-optical phonon modes dominate scattering, while ionized-impurity scattering dominates above 10^18 cm^-3. △ Less

Submitted 22 April, 2024; v1 submitted 22 January, 2024; originally announced January 2024.

Comments: 24 pages, 3 figures in main text, 6 figures in supplementary material

Journal ref: Appl. Phys. Lett. 22 April 2024; 124 (17): 172103

Theory of excitonic polarons: From models to first-principles calculations

Authors: Zhenbang Dai, Chao Lian, Jon Lafuente-Bartolome, Feliciano Giustino

Abstract: Excitons are neutral excitations that are composed of electrons and holes bound together by their attractive Coulomb interaction. The electron and the hole forming the exciton also interact with the underlying atomic lattice, and this interaction can lead to a trapping potential that favors exciton localization. The quasi-particle thus formed by the exciton and the surrounding lattice distortion i… ▽ More Excitons are neutral excitations that are composed of electrons and holes bound together by their attractive Coulomb interaction. The electron and the hole forming the exciton also interact with the underlying atomic lattice, and this interaction can lead to a trapping potential that favors exciton localization. The quasi-particle thus formed by the exciton and the surrounding lattice distortion is called excitonic polaron. Excitonic polarons have long been thought to exist in a variety of materials, and are often invoked to explain the Stokes shift between the optical absorption edge and the photo-luminescence peak. However, quantitative ab initio calculations of these effects are exceedingly rare. In this manuscript, we present a theory of excitonic polarons that is amenable to first-principles calculations. We first apply this theory to model Hamiltonians for Wannier excitons experiencing Fröhlich or Holstein electron-phonon couplings. We find that, in the case of Fröhlich interactions, excitonic polarons only form when there is a significant difference between electron and hole effective masses. Then, we apply this theory to calculating excitonic polarons in lithium fluoride ab initio. The key advantage of the present approach is that it does not require supercells, therefore it can be used to study a variety of materials hosting either small or large excitonic polarons. This work constitutes the first step toward a complete ab initio many-body theory of excitonic polarons in real materials. △ Less

Submitted 17 January, 2024; originally announced January 2024.

Journal ref: Physical Review B 109, 045202 (2024)

Excitonic polarons and self-trapped excitons from first-principles exciton-phonon couplings

Authors: Zhenbang Dai, Chao Lian, Jon Lafuente-Bartolome, Feliciano Giustino

Abstract: Excitons consist of electrons and holes held together by their attractive Coulomb interaction. Although excitons are neutral excitations, spatial fluctuations in their charge density couple with the ions of the crystal lattice. This coupling can lower the exciton energy and lead to the formation of a localized excitonic polaron, or even a self-trapped exciton in the presence of strong exciton-phon… ▽ More Excitons consist of electrons and holes held together by their attractive Coulomb interaction. Although excitons are neutral excitations, spatial fluctuations in their charge density couple with the ions of the crystal lattice. This coupling can lower the exciton energy and lead to the formation of a localized excitonic polaron, or even a self-trapped exciton in the presence of strong exciton-phonon interactions. Here, we develop a theoretical and computational approach to compute excitonic polarons and self-trapped excitons from first principles. Our methodology combines the many-body Bethe-Salpeter approach with density-functional perturbation theory, and does not require explicit supercell calculations. As a proof of concept, we demonstrate our method for a compound of the halide perovskite family. △ Less

Submitted 17 January, 2024; originally announced January 2024.

Journal ref: Physical Review Letters 132, 036902 (2024)

Anharmonic electron-phonon coupling in ultrasoft and locally disordered perovskites

Authors: Marios Zacharias, George Volonakis, Feliciano Giustino, Jacky Even

Abstract: Anharmonicity and local disorder (polymorphism) are ubiquitous in perovskite physics, inducing various phenomena observed in scattering and spectroscopy experiments. Several of these phenomena still lack interpretation from first-principles since, hitherto, no approach is available to account for anharmonicity and disorder in electron-phonon couplings. Here, relying on the special displacement met… ▽ More Anharmonicity and local disorder (polymorphism) are ubiquitous in perovskite physics, inducing various phenomena observed in scattering and spectroscopy experiments. Several of these phenomena still lack interpretation from first-principles since, hitherto, no approach is available to account for anharmonicity and disorder in electron-phonon couplings. Here, relying on the special displacement method, we develop a unified treatment of both and demonstrate that electron-phonon coupling is strongly influenced when we employ polymorphous perovskite networks. We uncover that polymorphism in halide perovskites leads to vibrational dynamics far from the ideal noninteracting phonon picture and drives the gradual change in their band gap around phase transition temperatures. We also clarify that combined band gap corrections arising from disorder, spin-orbit coupling, exchange-correlation functionals of high accuracy, and electron-phonon coupling are all essential. Our findings agree with experiments, suggesting that polymorphism is the key to address pending questions on perovskites' technological applications. △ Less

Submitted 29 August, 2023; v1 submitted 19 February, 2023; originally announced February 2023.

Journal ref: npj Comput Mater 9, 153 (2023)

Polarons in two-dimensional atomic crystals

Authors: Weng Hong Sio, Feliciano Giustino

Abstract: The polaron is the archetypal example of a quasiparticle emerging from the interaction between fermionic and bosonic fields in quantum field theory. In crystalline solids, polarons are formed when electrons and holes become dressed by the quanta of lattice vibrations. While experimental signatures of polarons in bulk three-dimensional materials abound, only rarely have polarons been observed in tw… ▽ More The polaron is the archetypal example of a quasiparticle emerging from the interaction between fermionic and bosonic fields in quantum field theory. In crystalline solids, polarons are formed when electrons and holes become dressed by the quanta of lattice vibrations. While experimental signatures of polarons in bulk three-dimensional materials abound, only rarely have polarons been observed in two-dimensional atomic crystals. Here, we shed light on this asymmetry by developing a quantitative ab initio theory of polarons in atomically-thin crystals. Using this conceptual framework, we unravel the real-space structure of the recently-observed hole polaron in hexagonal boron nitride, we discover an unexpected critical condition for the existence of polarons in two-dimensional crystals, and we establish the key materials descriptors and the universal laws that underpin polaron physics in two dimensions. △ Less

Submitted 16 February, 2023; originally announced February 2023.

Comments: 37 pages, 15 figures

Electron-phonon physics from first principles using the EPW code

Authors: Hyungjun Lee, Samuel Poncé, Kyle Bushick, Samad Hajinazar, Jon Lafuente-Bartolome, Joshua Leveillee, Chao Lian, Francesco Macheda, Hari Paudyal, Weng Hong Sio, Marios Zacharias, Xiao Zhang, Nicola Bonini, Emmanouil Kioupakis, Elena R. Margine, Feliciano Giustino

Abstract: EPW is an open-source software for $\textit{ab initio}$ calculations of electron-phonon interactions and related materials properties. The code combines density functional perturbation theory and maximally-localized Wannier functions to efficiently compute electron-phonon coupling matrix elements on ultra-fine Brillouin zone grids. This data is employed for predictive calculations of temperature-d… ▽ More EPW is an open-source software for $\textit{ab initio}$ calculations of electron-phonon interactions and related materials properties. The code combines density functional perturbation theory and maximally-localized Wannier functions to efficiently compute electron-phonon coupling matrix elements on ultra-fine Brillouin zone grids. This data is employed for predictive calculations of temperature-dependent properties and phonon-assisted quantum processes in bulk solids and low-dimensional materials. Here, we report on significant new developments in the code that occurred during the period 2016-2022, namely: a transport module for the calculation of charge carrier mobility and conductivity under electric and magnetic fields within the $\textit{ab initio}$ Boltzmann transport equation; a superconductivity module for the calculation of critical temperature and gap structure in phonon-mediated superconductors within the $\textit{ab initio}$ anisotropic multi-band Eliashberg theory; an optics module for calculations of phonon-assisted indirect transitions; a module for the calculation of small and large polarons without supercells using the $\textit{ab initio}$ polaron equations; and a module for calculating electron-phonon couplings, band structure renormalization, and temperature-dependent optical spectra using the special displacement method. For each capability, we outline the methodology and implementation, and provide example calculations. We describe recent code refactoring to prepare EPW for exascale architectures, we discuss efficient parallelization strategies, and report on extreme parallel scaling tests. △ Less

Submitted 15 February, 2023; originally announced February 2023.

Comments: 61 pages, 9 figures

Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering

Authors: Joshua Leveillee, Xiao Zhang, Emmanouil Kioupakis, Feliciano Giustino

Abstract: The past decade has seen the emergence of ab initio computational methods for calculating phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic calculations ought to take into account additional scattering mechanisms such as, for example, impurity and grain-boundary scattering. In this work, we investigate the effect of ionized-impurity scattering on the carr… ▽ More The past decade has seen the emergence of ab initio computational methods for calculating phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic calculations ought to take into account additional scattering mechanisms such as, for example, impurity and grain-boundary scattering. In this work, we investigate the effect of ionized-impurity scattering on the carrier mobility. We model the impurity potential by a collection of randomly distributed Coulomb scattering centers, and we include this relaxation channel into the ab initio Boltzmann transport equation, as implemented in the EPW code. We demonstrate this methodology by considering silicon, silicon carbide, and gallium phosphide, for which detailed experimental data are available. Our calculations agree reasonably well with experiments over a broad range of temperatures and impurity concentrations. For each compound investigated here, we compare the relative importance of electron-phonon scattering and ionized-impurity scattering, and we critically assess the reliability of Matthiessen's rule. We also show that an accurate description of dielectric screening and carrier effective masses cam improve quantitative agreement with experiments. △ Less

Submitted 5 January, 2023; originally announced January 2023.

Anharmonic lattice dynamics via the special displacement method

Authors: Marios Zacharias, George Volonakis, Feliciano Giustino, Jacky Even

Abstract: On the basis of the self-consistent phonon theory and the special displacement method, we develop an approach for the treatment of anharmonicity in solids. We show that this approach enables the efficient calculation of temperature-dependent anharmonic phonon dispersions, requiring very few steps to achieve minimization of the system's free energy. We demonstrate this methodology in the regime of… ▽ More On the basis of the self-consistent phonon theory and the special displacement method, we develop an approach for the treatment of anharmonicity in solids. We show that this approach enables the efficient calculation of temperature-dependent anharmonic phonon dispersions, requiring very few steps to achieve minimization of the system's free energy. We demonstrate this methodology in the regime of strongly anharmonic materials which exhibit a multi-well potential energy surface, like cubic SrTiO$_3$, CsPbBr$_3$, CsPbI$_3$, CsSnI$_3$, and Zr. Our results are in good agreement with experiments and previous first-principles studies relying on stochastic nonperturbative and molecular dynamics simulations. We achieve a very robust workflow by using harmonic phonons of the polymorphous ground state as the starting point and an iterative mixing scheme of the dynamical matrix. We also suggest that the phonons of the polymorphous ground state might provide an excellent starting approximation to explore anharmonicity. Given the simplicity, efficiency, and stability of the present treatment to anharmonicity, it is especially suitable for use with any electronic structure code and for investigating electron-phonon couplings in strongly anharmonic systems. △ Less

Submitted 31 July, 2023; v1 submitted 20 December, 2022; originally announced December 2022.

Comments: 10 figures

Ab initio self-consistent many-body theory of polarons at all couplings

Authors: Jon Lafuente-Bartolome, Chao Lian, Weng Hong Sio, Idoia G. Gurtubay, Asier Eiguren, Feliciano Giustino

Abstract: We present a theoretical framework to describe polarons from first principles within a many-body Green's function formalism. Starting from a general electron-phonon Hamiltonian, we derive a self-consistent Dyson equation in which the phonon-mediated self-energy is composed by two distinct terms. One term is the Fan-Migdal self-energy and describes dynamic electron-phonon processes, the other term… ▽ More We present a theoretical framework to describe polarons from first principles within a many-body Green's function formalism. Starting from a general electron-phonon Hamiltonian, we derive a self-consistent Dyson equation in which the phonon-mediated self-energy is composed by two distinct terms. One term is the Fan-Migdal self-energy and describes dynamic electron-phonon processes, the other term is a new contribution to the self-energy originating from the static displacements of the atomic nuclei in the polaronic ground state. The lowest-order approximation to the present theory yields the standard many-body perturbation theory approach to electron-phonon interactions in the limit of large polarons, and the ab initio polaron equations introduced in [Sio et al., Phys. Rev. B 99, 235139 (2019); Phys. Rev. Lett. 122, 246403 (2019)] in the limit of small polarons. A practical recipe to implement the present unifying formalism in first-principles calculations is outlined. We apply our method to the Fröhlich model, and obtain remarkably accurate polaron energies at all couplings, in line with Feynman's polaron theory and diagrammatic Monte Carlo calculations. We also recover the well-known results of Fröhlich and Pekar at weak and strong coupling, respectively. The present approach enables predictive many-body calculations of polarons in real materials at all couplings. △ Less

Submitted 12 August, 2022; originally announced August 2022.

Unified approach to polarons and phonon-induced band structure renormalization

Authors: Jon Lafuente-Bartolome, Chao Lian, Weng Hong Sio, Idoia G. Gurtubay, Asier Eiguren, Feliciano Giustino

Abstract: Ab initio calculations of the phonon-induced band structure renormalization are currently based on the perturbative Allen-Heine theory and its many-body generalizations. These approaches are unsuitable to describe materials where electrons form localized polarons. Here, we develop a self-consistent, many-body Green's function theory of band structure renormalization that incorporates localization… ▽ More Ab initio calculations of the phonon-induced band structure renormalization are currently based on the perturbative Allen-Heine theory and its many-body generalizations. These approaches are unsuitable to describe materials where electrons form localized polarons. Here, we develop a self-consistent, many-body Green's function theory of band structure renormalization that incorporates localization and self-trapping. We show that the present approach reduces to the Allen-Heine theory in the weak-coupling limit, and to total energy calculations of self-trapped polarons in the strong-coupling limit. To demonstrate this methodology, we reproduce the path-integral results of Feynman and diagrammatic Monte Carlo calculations for the Fröhlich model at all couplings, and we calculate the zero point renormalization of the band gap of an ionic insulator including polaronic effects. △ Less

Submitted 12 August, 2022; originally announced August 2022.

Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN$_2$ and MgSiN$_2$

Authors: Joshua Leveillee, Samuel Ponce, Nicholas L. Adamski, Chris G. Van de Walle, Feliciano Giustino

Abstract: The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via epitaxial matching to II-IV nitride materials that have recently become available, namely ZnGeN$_2$ and MgSiN$_2$. We perform state-of-the-art calculations of the hole mobility of GaN using the ab initio Boltzmann transp… ▽ More The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via epitaxial matching to II-IV nitride materials that have recently become available, namely ZnGeN$_2$ and MgSiN$_2$. We perform state-of-the-art calculations of the hole mobility of GaN using the ab initio Boltzmann transport equation. We show that effective uniaxial compressive strain of GaN along the $[1\bar{1}00]$ by lattice matching to ZnGeN$_2$ and MgSiN$_2$ results in the inversion of the heavy hole band and split-off hole band, thereby lowering the effective hole mass in the compression direction. We find that lattice matching to ZnGeN$_2$ and MgSiN$_2$ induces an increase of the room-temperature hole mobility by 50% and 260% as compared to unstrained GaN, respectively. Examining the trends as a function of strain, we find that the variation in mobility is highly nonlinear; lattice matching to a hypothetical solid solution of Zn$_{0.75}$Ge$_{0.75}$Mg$_{0.25}$Si$_{0.25}$N$_2$ would already increase the hole mobility by 160%. △ Less

Submitted 12 May, 2022; originally announced May 2022.

Ab initio theory of free-carrier absorption in semiconductors

Authors: Xiao Zhang, Guangsha Shi, Joshua A. Leveillee, Feliciano Giustino, Emmanouil Kioupakis

Abstract: The absorption of light by free carriers in semiconductors results in optical loss for all photon wavelengths. Since free-carrier absorption competes with optical transitions across the band gap, it also reduces the efficiency of optoelectronic devices such as solar cells because it does not generate electron-hole pairs. In this work, we develop a first-principles theory of free-carrier absorption… ▽ More The absorption of light by free carriers in semiconductors results in optical loss for all photon wavelengths. Since free-carrier absorption competes with optical transitions across the band gap, it also reduces the efficiency of optoelectronic devices such as solar cells because it does not generate electron-hole pairs. In this work, we develop a first-principles theory of free-carrier absorption taking into account both single-particle excitations and the collective Drude term, and we demonstrate its application to the case of doped Si. We determine the free-carrier absorption coefficient as a function of carrier concentration and we obtain excellent agreement with experimental data. We identify the dominant processes that contribute to free-carrier absorption at various photon wavelengths, and analyze the results to evaluate the impact of this loss mechanism on the efficiency of Si-based optoelectronic devices. △ Less

Submitted 31 October, 2022; v1 submitted 5 May, 2022; originally announced May 2022.

Comments: 8 pages, 6 figures

Unified ab initio description of Fröhlich electron-phonon interactions in two-dimensional and three-dimensional materials

Authors: Weng Hong Sio, Feliciano Giustino

Abstract: \textit{Ab initio} calculations of electron-phonon interactions including the polar Fröhlich coupling have advanced considerably in recent years. The Fröhlich electron-phonon matrix element is by now well understood in the case of bulk three-dimensional (3D) materials. In the case of two-dimensional (2D) materials, the standard procedure to include Fröhlich coupling is to employ Coulomb truncation… ▽ More \textit{Ab initio} calculations of electron-phonon interactions including the polar Fröhlich coupling have advanced considerably in recent years. The Fröhlich electron-phonon matrix element is by now well understood in the case of bulk three-dimensional (3D) materials. In the case of two-dimensional (2D) materials, the standard procedure to include Fröhlich coupling is to employ Coulomb truncation, so as to eliminate artificial interactions between periodic images of the 2D layer. While these techniques are well established, the transition of the Fröhlich coupling from three to two dimensions has not been investigated. Furthermore, it remains unclear what error one makes when describing 2D systems using the standard bulk formalism in a periodic supercell geometry. Here, we generalize previous work on the \textit{ab initio} Fröhlich electron-phonon matrix element in bulk materials by investigating the electrostatic potential of atomic dipoles in a periodic supercell consisting of a 2D material and a continuum dielectric slab. We obtain a unified expression for the matrix element, which reduces to the existing formulas for 3D and 2D systems when the interlayer separation tends to zero or infinity, respectively. This new expression enables an accurate description of the Fröhlich matrix element in 2D systems without resorting to Coulomb truncation. We validate our approach by direct \textit{ab initio} density-functional perturbation theory calculations for monolayer BN and MoS$_2$, and we provide a simple expression for the 2D Fröhlich matrix element that can be used in model Hamiltonian approaches. The formalism outlined in this work may find applications in calculations of polarons, quasiparticle renormalization, transport coefficients, and superconductivity, in 2D and quasi-2D materials. △ Less

Submitted 15 March, 2022; v1 submitted 1 March, 2022; originally announced March 2022.

Comments: 17 pages, 6 figures

Many-body Green's function approaches to the doped Fröhlich solid: Exact solutions and anomalous mass enhancement

Authors: Nikolaus Kandolf, Carla Verdi, Feliciano Giustino

Abstract: In polar semiconductors and insulators, the Fröhlich interaction between electrons and long-wavelength longitudinal optical phonons induces a many-body renormalization of the carrier effective masses and the appearence of characteristic phonon sidebands in the spectral function, commonly dubbed 'polaron satellites'. The simplest model that captures these effects is the Fröhlich model, whereby elec… ▽ More In polar semiconductors and insulators, the Fröhlich interaction between electrons and long-wavelength longitudinal optical phonons induces a many-body renormalization of the carrier effective masses and the appearence of characteristic phonon sidebands in the spectral function, commonly dubbed 'polaron satellites'. The simplest model that captures these effects is the Fröhlich model, whereby electrons in a parabolic band interact with a dispersionless longitudinal optical phonon. The Fröhlich model has been employed in a number of seminal papers, from early perturbation-theory approaches to modern diagrammatic Monte Carlo calculations. One limitation of this model is that it focuses on undoped systems, thus ignoring carrier screening and Pauli blocking effects that are present in real experiments on doped samples. To overcome this limitation, we here extend the Fröhlich model to the case of doped systems, and we provide exact solutions for the electron spectral function, mass enhancement, and polaron satellites. We perform the analysis using two approaches, namely Dyson's equation with the Fan-Migdal self-energy, and the second-order cumulant expansion. We find that these two approaches provide qualitatively different results. In particular, the Dyson's approach yields better quasiparticle masses and worse satellites, while the cumulant approach provides better satellite structures, at the price of worse quasiparticle masses. Both approaches yield an anomalous enhancement of the electron effective mass at finite doping levels, which in turn leads to a breakdown of the quasiparticle picture in a significant portion of the phase diagram. △ Less

Submitted 10 February, 2022; originally announced February 2022.

Comments: 30 pages, 10 figures; accepted for publication in Physical Review B

Journal ref: Phys. Rev. B 105, 085148 (2022)

Theory and computation of Hall scattering factor in graphene

Authors: Francesco Macheda, Samuel Poncé, Feliciano Giustino, Nicola Bonini

Abstract: The Hall scattering factor, $r$, is a key quantity for establishing carrier concentration and drift mobility from Hall measurements; in experiments it is usually assumed to be 1. In this paper we use a combination of analytical and \textit{ab initio} modelling to determine $r$ in graphene. While at high carrier densities $r \approx 1$ in a wide temperature range, at low doping the temperature depe… ▽ More The Hall scattering factor, $r$, is a key quantity for establishing carrier concentration and drift mobility from Hall measurements; in experiments it is usually assumed to be 1. In this paper we use a combination of analytical and \textit{ab initio} modelling to determine $r$ in graphene. While at high carrier densities $r \approx 1$ in a wide temperature range, at low doping the temperature dependence of $r$ is very strong with values as high as 4 below 300~K. These high values are due to the linear bands around the Dirac cone and the carrier scattering rates due to acoustic phonons. At higher temperatures $r$ can instead become as low as $0.5$ due to the contribution of both holes and electrons and the role of optical phonons. Finally, we provide a simple analytical model to compute accurately $r$ in graphene in a wide range of temperatures and carrier densities. △ Less

Submitted 21 November, 2021; originally announced November 2021.

Limits to Electrical Mobility in Lead-Halide Perovskite Semiconductors

Authors: Chelsea Q. Xia, Jiali Peng, Samuel Poncé, Jay B. Patel, Adam D. Wright, Timothy W. Crothers, Mathias Uller Rothmann, Juliane Borchert, Rebecca L. Milot, Hans Kraus, Qianqian Lin, Feliciano Giustino, Laura M. Herz, Michael B. Johnston

Abstract: Semiconducting polycrystalline thin films are cheap to produce and can be deposited on flexible substrates, yet high-performance electronic devices usually utilize single-crystal semiconductors, owing to their superior electrical mobilities and longer diffusion lengths. Here we show that the electrical performance of polycrystalline films of metal-halide perovskites (MHPs) approaches that of singl… ▽ More Semiconducting polycrystalline thin films are cheap to produce and can be deposited on flexible substrates, yet high-performance electronic devices usually utilize single-crystal semiconductors, owing to their superior electrical mobilities and longer diffusion lengths. Here we show that the electrical performance of polycrystalline films of metal-halide perovskites (MHPs) approaches that of single crystals at room temperature. Combining temperature-dependent terahertz conductivity measurements and ab initio calculations we uncover a complete picture of the origins of charge scattering in single crystals and polycrystalline films of CH$_3$NH$_3$PbI$_3$. We show that Fröhlich scattering of charge carriers with multiple phonon modes is the dominant mechanism limiting mobility, with grain-boundary scattering further reducing mobility in polycrystalline films. We reconcile the large discrepancy in charge diffusion lengths between single crystals and films by considering photon reabsorption. Thus, polycrystalline films of MHPs offer great promise for devices beyond solar cells, including transistors and modulators. △ Less

Submitted 10 September, 2021; originally announced September 2021.

Comments: 33 pages, 4 figures (including the toc figure)

Journal ref: J. Phys. Chem. Lett. 2021, 12, 3607

Superconducting properties of MoTe$_2$ from the $ab~initio$ anisotropic Migdal-Eliashberg theory

Authors: Hari Paudyal, Samuel Poncé, Feliciano Giustino, Elena R. Margine

Abstract: Molybdenum ditelluride (MoTe$_2$) is attracting considerable interest since it is the archetypal type-II Weyl semimetal and a candidate for topological superconductivity. We investigate the superconducting phase diagram of two MoTe$_2$ polymorphs using the $ab~initio$ anisotropic Migdal-Eliashberg theory, and we show that the superconducting dome originates from the synergistic contribution of the… ▽ More Molybdenum ditelluride (MoTe$_2$) is attracting considerable interest since it is the archetypal type-II Weyl semimetal and a candidate for topological superconductivity. We investigate the superconducting phase diagram of two MoTe$_2$ polymorphs using the $ab~initio$ anisotropic Migdal-Eliashberg theory, and we show that the superconducting dome originates from the synergistic contribution of the density of states at the Fermi level and the transverse acoustic Te modes in the 1T$^\prime$ phase. We find that the electron and hole pockets carry trivial $s$-wave order parameters of slightly different magnitude, reminiscent of a two-gap structure as suggested by recent experiments. We suggest that a possible route for enhancing the superconducting critical temperature, and realizing $s_{+-}$ pairing, in the T$_d$ phase is to exploit its non-trivial band topology via electron doping. △ Less

Submitted 10 September, 2021; originally announced September 2021.

Comments: 10 pages, 8 figures, and contains supplemental material

First-principles study of electron transport in ScN

Authors: Sai Mu, Andrew J. E. Rowberg, Joshua Leveillee, Feliciano Giustino, Chris G. Van de Walle

Abstract: We investigate the conduction-band structure and electron mobility in rocksalt ScN based on density functional theory. The first-principles band structure allows us to obtain band velocities and effective masses as a function of energy. Electron-phonon scattering is assessed by explicitly computing the $q$-dependent electron-phonon matrix elements, with the inclusion of the long-range electrostati… ▽ More We investigate the conduction-band structure and electron mobility in rocksalt ScN based on density functional theory. The first-principles band structure allows us to obtain band velocities and effective masses as a function of energy. Electron-phonon scattering is assessed by explicitly computing the $q$-dependent electron-phonon matrix elements, with the inclusion of the long-range electrostatic interaction. The influence of free-carrier screening on the electron transport is assessed using the random phase approximation. We find a notable enhancement of electron mobility when the carrier concentration exceeds 10$^{20}$ cm$^{-3}$. We calculate the room-temperature electron mobility in ScN to be 587 cm$^2$/Vs at low carrier concentrations. When the carrier concentration is increased, the electron mobility starts to decrease significantly around $n=10^{19}$ cm$^{-3}$, and drops to 240 cm$^2$/Vs at $n=10^{21}$ cm$^{-3}$. We also explore the influence of strain in (111)- and (100)-oriented ScN films. For (111) films, we find that a 1.0\% compressive epitaxial strain increases the in-plane mobility by 72 cm$^2$/Vs and the out-of-plane mobility by 50 cm$^2$/Vs. For (100) films, a 1.0\% compressive epitaxial strain increases the out-of-plane mobility by as much as 172 cm$^2$/Vs, but has a weak impact on the in-plane mobility. Our study sheds light on electron transport in ScN at different electron concentrations and shows how strain engineering could increase the electron mobility. △ Less

Submitted 15 May, 2021; originally announced May 2021.

Comments: 12 pages, 11 figures

Journal ref: Phys. Rev. B 104, 075118 (2021)

First-principles predictions of Hall and drift mobilities in semiconductors

Authors: Samuel Ponce, Francesco Macheda, Elena Roxana Margine, Nicola Marzari, Nicola Bonini, Feliciano Giustino

Abstract: Significant progress on parameter-free calculations of carrier mobilities in real materials has been made during the past decade; however, the role of various approximations remains unclear and a unified methodology is lacking. Here, we present and analyse a comprehensive and efficient approach to compute the intrinsic, phonon-limited drift and Hall carrier mobilities of semiconductors, within the… ▽ More Significant progress on parameter-free calculations of carrier mobilities in real materials has been made during the past decade; however, the role of various approximations remains unclear and a unified methodology is lacking. Here, we present and analyse a comprehensive and efficient approach to compute the intrinsic, phonon-limited drift and Hall carrier mobilities of semiconductors, within the framework of the first-principles Boltzmann transport equation. The methodology exploits a novel approach for estimating quadrupole tensors and including them in the electron-phonon interactions, and capitalises on a rigorous and efficient procedure for numerical convergence. The accuracy reached in this work allows to assess common approximations, including the role of exchange and correlation functionals, spin-orbit coupling, pseudopotentials, Wannier interpolation, Brillouin-zone sampling, dipole and quadrupole corrections, and the relaxation-time approximation. A detailed analysis is showcased on ten prototypical semiconductors, namely diamond, silicon, GaAs, 3C-SiC, AlP, GaP, c-BN, AlAs, AlSb, and SrO. By comparing this extensive dataset with available experimental data, we explore the intrinsic nature of phonon-limited carrier transport and magnetotransport phenomena in these compounds. We find that the most accurate calculations predict Hall mobilities up to a factor of two larger than experimental data; this could point to promising experimental improvements in the samples quality, or to the limitations of density-function theory in predicting the carrier effective masses and overscreening the electron-phonon matrix elements. By setting tight standards for reliability and reproducibility, the present work aims to facilitate validation and verification of data and software towards predictive calculations of transport phenomena in semiconductors. △ Less

Submitted 10 May, 2021; originally announced May 2021.

Comments: 40 pages and 26 figures

Journal ref: Phys. Rev. Research 3, 043022 (2021)

Multi-phonon diffuse scattering in solids from first-principles: Application to layered crystals and 2D materials

Authors: Marios Zacharias, Hélène Seiler, Fabio Caruso, Daniela Zahn, Feliciano Giustino, Pantelis C. Kelires, Ralph Ernstorfer

Abstract: Time-resolved diffuse scattering experiments have gained increasing attention due to their potential to reveal non-equilibrium dynamics of crystal lattice vibrations with full momentum resolution. Although progress has been made in interpreting experimental data on the basis of one-phonon scattering, understanding the role of individual phonons can be sometimes hindered by multi-phonon excitations… ▽ More Time-resolved diffuse scattering experiments have gained increasing attention due to their potential to reveal non-equilibrium dynamics of crystal lattice vibrations with full momentum resolution. Although progress has been made in interpreting experimental data on the basis of one-phonon scattering, understanding the role of individual phonons can be sometimes hindered by multi-phonon excitations. In Ref. [{\it arXiv:2103.10108}] we have introduced a rigorous approach for the calculation of the all-phonon inelastic scattering intensity of solids from first-principles. In the present work, we describe our implementation in detail and show that multi-phonon interactions are captured efficiently by exploiting translational and time-reversal symmetries of the crystal. We demonstrate its predictive power by calculating the scattering patterns of monolayer molybdenum disulfide (MoS$_2$), bulk MoS$_2$, and black phosphorus (bP), and we obtain excellent agreement with our measurements of thermal electron diffuse scattering. Remarkably, our results show that multi-phonon excitations dominate in bP across multiple Brillouin zones, while in MoS$_2$ they play a less pronounced role. We expand our analysis for each system and examine the effect of individual atomic and interatomic vibrational motion on the diffuse scattering signals. We further demonstrate the high-throughput capability of our approach by reporting all-phonon scattering maps of 2D MoSe2, WSe2, WS2, graphene, and CdI2, rationalizing in each case the effect of multi-phonon processes. As a side point, we show that the special displacement method reproduces the thermally distorted configuration that generates precisely the all-phonon diffuse pattern. △ Less

Submitted 22 September, 2021; v1 submitted 16 April, 2021; originally announced April 2021.

Monolayer 1T-NbSe2 as a 2D correlated magnetic insulator

Authors: Mengke Liu, Joshua Leveillee, Shuangzan Lu, Jia Yu, Hyunsue Kim, Keji Lai, Chendong Zhang, Feliciano Giustino, Chih-Kang Shih

Abstract: Monolayer group-V transition metal dichalcogenides in their 1T phase have recently emerged as a platform to investigate rich phases of matter, such as spin liquid and ferromagnetism, resulting from strong electron correlations. Although 1T phase NbSe2 does not occur naturally in bulk form, it has been discovered that the 1T and 1H phases can coexist when monolayer NbSe2 is grown via molecular beam… ▽ More Monolayer group-V transition metal dichalcogenides in their 1T phase have recently emerged as a platform to investigate rich phases of matter, such as spin liquid and ferromagnetism, resulting from strong electron correlations. Although 1T phase NbSe2 does not occur naturally in bulk form, it has been discovered that the 1T and 1H phases can coexist when monolayer NbSe2 is grown via molecular beam epitaxy (MBE). This discovery has inspired theoretical investigations predicting collective phenomena such as ferromagnetism in two dimensions. Here, by controlling the MBE growth parameters, we demonstrate the successful growth of single-phase 1T-NbSe2. By combining scanning tunneling microscopy/spectroscopy and ab initio calculations, we show that this system is a charge-transfer insulator, with the upper Hubbard band located above the valence band maximum. Furthermore, by creating a vertical 1T/2H NbSe2 heterostructure, we find evidence of exchange interactions between the localized magnetic moments in 1T phase and the metallic/superconducting phase, as manifested by Kondo resonances and Yu-Shiba-Rusinov bound states. △ Less

Submitted 23 March, 2021; originally announced March 2021.

Journal ref: Sci. Adv. 7, eabi6339 (2021)

Efficient first-principles methodology for the calculation of the all-phonon inelastic scattering in solids

Authors: Marios Zacharias, Hélène Seiler, Fabio Caruso, Daniela Zahn, Feliciano Giustino, Pantelis C. Kelires, Ralph Ernstorfer

Abstract: Inelastic scattering experiments are key methods for mapping the full dispersion of fundamental excitations of solids in the ground as well as non-equilibrium states. A quantitative analysis of inelastic scattering in terms of phonon excitations requires identifying the role of multi-phonon processes. Here, we develop an efficient first-principles methodology for calculating the all-phonon quantum… ▽ More Inelastic scattering experiments are key methods for mapping the full dispersion of fundamental excitations of solids in the ground as well as non-equilibrium states. A quantitative analysis of inelastic scattering in terms of phonon excitations requires identifying the role of multi-phonon processes. Here, we develop an efficient first-principles methodology for calculating the all-phonon quantum mechanical structure factor of solids. We demonstrate our method by obtaining excellent agreement between measurements and calculations of the diffuse scattering patterns of black phosphorus, showing that multi-phonon processes play a substantial role. The present approach constitutes a step towards the interpretation of static and time-resolved electron, X-ray, and neutron inelastic scattering data. △ Less

Submitted 22 September, 2021; v1 submitted 18 March, 2021; originally announced March 2021.

The 2021 Quantum Materials Roadmap

Authors: Feliciano Giustino, Jin Hong Lee, Felix Trier, Manuel Bibes, Stephen M Winter, Roser Valentí, Young-Woo Son, Louis Taillefer, Christoph Heil, Adriana I. Figueroa, Bernard Plaçais, QuanSheng Wu, Oleg V. Yazyev, Erik P. A. M. Bakkers, Jesper Nygård, Pol Forn-Diaz, Silvano De Franceschi, J. W. McIver, L. E. F. Foa Torres, Tony Low, Anshuman Kumar, Regina Galceran, Sergio O. Valenzuela, Marius V. Costache, Aurélien Manchon , et al. (4 additional authors not shown)

Abstract: In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi… ▽ More In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Comments: 93 pages, 27 figures

Journal ref: J. Phys. Mater. 3 042006 (2020)

GW band structure of monolayer MoS2 using the SternheimerGW method and effect of dielectric environment

Authors: Nourdine Zibouche, Martin Schlipf, Feliciano Giustino

Abstract: Monolayers of transition-metal dichalcogenides (TMDs) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can affect the electronic and optical properties of these two-dimensional (2D) materials. Here, we perform many-body GW calculations using the SternheimerGW method… ▽ More Monolayers of transition-metal dichalcogenides (TMDs) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can affect the electronic and optical properties of these two-dimensional (2D) materials. Here, we perform many-body GW calculations using the SternheimerGW method to investigate the quasiparticle band structure of monolayer MoS2 subject to an effective dielectric screening model, which is meant to approximately describe substrate polarization in real device applications. We show that, within this model, the dielectric screening has a sizable effect on the quasiparticle band gap; for example, the gap renormalization is as large as 250 meV for MoS2 with model screening corresponding to SiO2. Within the G0W0 approximation, we also find that the inclusion of the effective screening induces a direct band gap, in contrast to the unscreened monolayer. We also find that the dielectric screening induces an enhancement of the carrier effective masses by as much as 27% for holes, shifts plasmon satellites, and redistributes quasiparticle weight. Our results highlight the importance of the dielectric environment in the design of 2D TMD-based devices. △ Less

Submitted 1 March, 2021; v1 submitted 10 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. B 103, 125401 (2021)

Structural, electronic, elastic, power and transport properties of $β$-Ga$_2$O$_3$ from first-principles

Authors: Samuel Poncé, Feliciano Giustino

Abstract: We investigate the structural, electronic, vibrational, power and transport properties of the $β$ allotrope of Ga$_2$O$_3$ from first-principles. We find phonon frequencies and elastic constants that reproduce the correct band ordering, in agreement with experiment. We use the Boltzmann transport equation to compute the intrinsic electron and hole drift mobility and obtain a room temperature value… ▽ More We investigate the structural, electronic, vibrational, power and transport properties of the $β$ allotrope of Ga$_2$O$_3$ from first-principles. We find phonon frequencies and elastic constants that reproduce the correct band ordering, in agreement with experiment. We use the Boltzmann transport equation to compute the intrinsic electron and hole drift mobility and obtain a room temperature values of 258 cm$^2$/Vs and 1.2 cm$^2$/Vs, respectively as well as 6300 cm$^2$/Vs and 13 cm$^2$/Vs at 100 K. Through a spectral decomposition of the scattering contribution to the inverse mobility, we find that multiple longitudinal optical modes of B$_u$ symmetry are responsible for the electron mobility of $β$- Ga$_2$O$_3$ but that many acoustic modes also contributes, making it essential to include all scattering processes in the calculations. Using the von Hippel low energy criterion we computed the breakdown field to be 5.8 MV/cm at room temperature yielding a Baliga's figure of merit of 1250 with respect to silicon, ideal for high-power electronics. This work presents a general framework to predictively investigate novel high-power electronic materials. △ Less

Submitted 28 July, 2020; originally announced July 2020.

Comments: With respect to the published version, this version includes the correct citation to F. Macheda and N. Bonini, Phys. Rev. B 98, 201201 (2018) - Ref. [64]

Journal ref: Phys. Rev. Research 2 (2020) 033102

Dynamic Rashba-Dresselhaus Effect

Authors: Martin Schlipf, Feliciano Giustino

Abstract: The Rashba-Dresselhaus effect is the splitting of doubly degenerate band extrema in semiconductors, accompanied by the emergence of counter-rotating spin textures and spin-momentum locking. Here we investigate how this effect is modified by lattice vibrations. We show that, in centrosymmetric non-magnetic crystals, for which a bulk Rashba-Dresselhaus effect is symmetry-forbidden, electron-phonon i… ▽ More The Rashba-Dresselhaus effect is the splitting of doubly degenerate band extrema in semiconductors, accompanied by the emergence of counter-rotating spin textures and spin-momentum locking. Here we investigate how this effect is modified by lattice vibrations. We show that, in centrosymmetric non-magnetic crystals, for which a bulk Rashba-Dresselhaus effect is symmetry-forbidden, electron-phonon interactions can induce a phonon-assisted, dynamic Rashba-Dresselhaus spin splitting in the presence of an out-of-equilibrium phonon population. In particular, we show how Rashba, Dresselhaus, or Weyl spin textures can selectively be established by driving coherent infrared-active phonons, and we perform ab initio calculations to quantify this effect for halide perovskites. △ Less

Submitted 6 December, 2021; v1 submitted 22 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Lett. 127, 237601 (2021)

Electron-polaron dichotomy of charge carriers in perovskite oxides

Authors: Marius-Adrian Husanu, Lorenzo Vistoli, Carla Verdi, Anke Sander, Vincent Garcia, Julien Rault, Federico Bisti, Leonid L. Lev, Thorsten Schmitt, Feliciano Giustino, Andrey S. Mishchenko, Manuel Bibes, Vladimir N. Strocov

Abstract: Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here,… ▽ More Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here, we use angle-resolved photoemission spectroscopy to visualize how electrons delocalize and couple to phonons in CaMnO3. We show the development of a Fermi surface where mobile electrons coexist with heavier carriers, strongly coupled polarons. The latter originate from a boost of the electron-phonon interaction (EPI). This finding brings to light the role that the EPI can play in MITs even caused by purely electronic mechanisms. Our discovery of the EPI-induced dichotomy of the charge carriers explains the transport response of Ce-doped CaMnO3 and suggests strategies to engineer quantum matter from TMOs. △ Less

Submitted 15 April, 2020; v1 submitted 6 April, 2020; originally announced April 2020.

Comments: Accepted manuscript to Communications Physics 3, 62 (2020)

Journal ref: Communications Physics 3, 62 (2020)

Theory of the special displacement method for electronic structure calculations at finite temperature

Authors: Marios Zacharias, Feliciano Giustino

Abstract: Calculations of electronic and optical properties of solids at finite temperature including electron-phonon interactions and quantum zero-point renormalization have enjoyed considerable progress during the past few years. Among the emerging methodologies in this area, we recently proposed a new approach to compute optical spectra at finite temperature including phonon-assisted quantum processes vi… ▽ More Calculations of electronic and optical properties of solids at finite temperature including electron-phonon interactions and quantum zero-point renormalization have enjoyed considerable progress during the past few years. Among the emerging methodologies in this area, we recently proposed a new approach to compute optical spectra at finite temperature including phonon-assisted quantum processes via a single supercell calculation [Zacharias and Giustino, Phys. Rev. B 94, 075125 (2016)]. In the present work we considerably expand the scope of our previous theory starting from a compact reciprocal space formulation, and we demonstrate that this improved approach provides accurate temperature-dependent band structures in three-dimensional and two-dimensional materials, using a special set of atomic displacements in a single supercell calculation. We also demonstrate that our special displacement reproduces the thermal ellipsoids obtained from X-ray crystallography, and yields accurate thermal averages of the mean-square atomic displacements. At a more fundamental level, we show that the special displacement represents an exact single-point approximant of an imaginary-time Feynman's path integral for the lattice dynamics. This enhanced version of the special displacement method enables non-perturbative, robust, and straightforward ab initio calculations of the electronic and optical properties of solids at finite temperature, and can easily be used as a post-processing step to any electronic structure code. Given its simplicity and numerical stability, the present development is suited for high-throughput calculations of band structures, quasiparticle corrections, optical spectra, and transport coefficients at finite temperature. △ Less

Submitted 23 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. Research 2, 013357 (2020)

Hole mobility of strained GaN from first principles

Authors: Samuel Poncé, Debdeep Jena, Feliciano Giustino

Abstract: Nitride semiconductors are ubiquitous in optoelectronic devices such as LEDs and Blu-Ray optical disks. A major limitation for further adoption of GaN in power electronics is its low hole mobility. In order to address this challenge, here we investigate the phonon-limited mobility of wurtzite GaN using the ab initio Boltzmann transport formalism, including all electron-phonon scattering processes,… ▽ More Nitride semiconductors are ubiquitous in optoelectronic devices such as LEDs and Blu-Ray optical disks. A major limitation for further adoption of GaN in power electronics is its low hole mobility. In order to address this challenge, here we investigate the phonon-limited mobility of wurtzite GaN using the ab initio Boltzmann transport formalism, including all electron-phonon scattering processes, spin-orbit coupling, and many-body quasiparticle band structures. We demonstrate that the mobility is dominated by acoustic deformation-potential scattering, and we predict that the hole mobility can significantly be increased by lifting the split-off hole states above the light and heavy holes. This can be achieved by reversing the sign of the crystal-field splitting via strain or via coherent excitation the A$_1$ optical phonon through ultrafast infrared optical pulses. △ Less

Submitted 6 August, 2019; originally announced August 2019.

Comments: 17 pages and 11 figures

Journal ref: Phys. Rev. B 100, 085204 (2019)

Route to high hole mobility in GaN via reversal of crystal-field splitting

Authors: Samuel Poncé, Debdeep Jena, Feliciano Giustino

Abstract: A fundamental obstacle toward the realization of GaN p-channel transistors is its low hole mobility. Here we investigate the intrinsic phonon-limited mobility of electrons and holes in wurtzite GaN using the ab initio Boltzmann transport formalism, including all electron-phonon scattering processes and many-body quasiparticle band structures. We predict that the hole mobility can be increased by r… ▽ More A fundamental obstacle toward the realization of GaN p-channel transistors is its low hole mobility. Here we investigate the intrinsic phonon-limited mobility of electrons and holes in wurtzite GaN using the ab initio Boltzmann transport formalism, including all electron-phonon scattering processes and many-body quasiparticle band structures. We predict that the hole mobility can be increased by reversing the sign of the crystal-field splitting, in such a way as to lift the split-off hole states above the light and heavy holes. We find that a 2% biaxial tensile strain can increase the hole mobility by 230%, up to a theoretical Hall mobility of 120 cm$^2$/Vs at room temperature and 620 cm$^2$/Vs at 100 K. △ Less

Submitted 7 August, 2019; v1 submitted 6 August, 2019; originally announced August 2019.

Comments: Submitted to PRL on 3 Nov 2018. Update to cross-reference with arXiv:1908.02072

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

Authors: Samuel Poncé, Wenbin Li, Sven Reichardt, Feliciano Giustino

Abstract: One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electron and hole mobilities. Recently, advances in electronic structure methods for real materials have made it possible to study these properties wit… ▽ More One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electron and hole mobilities. Recently, advances in electronic structure methods for real materials have made it possible to study these properties with predictive accuracy and without resorting to empirical parameters. Here, we review the most recent developments in the area of ab initio calculations of carrier mobilities of semiconductors. In the first part, we offer a brief historical overview of approaches to the calculation of carrier mobilities, and we establish the conceptual framework underlying modern ab initio approaches. We summarize the Boltzmann theory of carrier transport and we discuss its scope of applicability, merits, and limitations in the broader context of many-body Green's function approaches. We discuss recent implementations of the Boltzmann formalism within the context of density functional theory and many-body perturbation theory calculations, placing an emphasis on the key computational challenges and suggested solutions. In the second part, we discuss recent investigations of classic materials such as silicon, diamond, GaAs, GaN, Ga2O3, and lead halide perovskites as well as low-dimensional semiconductors such as graphene, silicene, phosphorene, MoS2, and InSe. We also review recent efforts toward high-throughput calculations of carrier transport. In the last part, we discuss the extension of the methodology to study spintronics and topological materials and we comment on the possibility of incorporating Berry-phase effects and many-body correlations beyond the standard Boltzmann formalism. △ Less

Submitted 5 August, 2019; originally announced August 2019.

Comments: 50 pages and 19 figures

Ab initio theory of polarons: formalism and applications

Authors: Weng Hong Sio, Carla Verdi, Samuel Ponce, Feliciano Giustino

Abstract: We develop a theoretical and computational framework to study polarons in semiconductors and insulators from first principles. Our approach provides the formation energy, excitation energy, and wavefunction of both electron and hole polarons, and takes into account the coupling of the electron or hole to all phonons. An important feature of the present method is that it does not require supercell… ▽ More We develop a theoretical and computational framework to study polarons in semiconductors and insulators from first principles. Our approach provides the formation energy, excitation energy, and wavefunction of both electron and hole polarons, and takes into account the coupling of the electron or hole to all phonons. An important feature of the present method is that it does not require supercell calculations, and relies exclusively on electron band structures, phonon dispersions, and electron-phonon matrix elements obtained from calculations in the crystal unit cell. Starting from the Kohn-Sham (KS) equations of density-functional theory, we formulate the polaron problem as a variational minimization, and we obtain a nonlinear eigenvalue problem in the basis of KS states and phonon eigenmodes. In our formalism the electronic component of the polaron is expressed as a coherent superposition of KS states, in close analogy with the solution of the Bethe-Salpeter equation for the calculation of excitons. We demonstrate the power of the methodology by studying polarons in LiF and Li2O2. We show that our method describes both small and large polarons, and seamlessly captures Frohlich-type polar electron-phonon coupling and non-Frohlich coupling to acoustic and optical phonons. To analyze in quantitative terms the electron-phonon coupling mechanisms leading to the formation of polarons, we introduce spectral decompositions similar to the Eliashberg spectral function. We validate our theory using both analytical results and direct calculations on large supercells. This study constitutes a first step toward complete ab initio many-body calculations of polarons in real materials. △ Less

Submitted 19 June, 2019; originally announced June 2019.

Comments: 26 pages, 8 figures

Journal ref: PhysRevB.99.235139 (2019)

Polarons from first principles, without supercells

Authors: Weng Hong Sio, Carla Verdi, Samuel Ponce, Feliciano Giustino

Abstract: We develop a formalism and a computational method to study polarons in insulators and semi-conductors from first principles. Unlike in standard calculations requiring large supercells, we solve a secular equation involving phonons and electron-phonon matrix elements from density-functional perturbation theory, in a spirit similar to the Bethe-Salpeter equation for excitons. We show that our approa… ▽ More We develop a formalism and a computational method to study polarons in insulators and semi-conductors from first principles. Unlike in standard calculations requiring large supercells, we solve a secular equation involving phonons and electron-phonon matrix elements from density-functional perturbation theory, in a spirit similar to the Bethe-Salpeter equation for excitons. We show that our approach describes seamlessly large and small polarons, and we illustrate its capability by calculating wavefunctions, formation energies, and spectral decomposition of polarons in LiF and Li2O2. △ Less

Submitted 19 June, 2019; originally announced June 2019.

Comments: 2 figures

Journal ref: PhysRevLett.122.246403 (2019)

SternheimerGW: a program for calculating GW quasiparticle band structures and spectral functions without unoccupied states

Authors: Martin Schlipf, Henry Lambert, Nourdine Zibouche, Feliciano Giustino

Abstract: The SternheimerGW software uses time-dependent density-functional perturbation theory to evaluate GW quasiparticle band structures and spectral functions for solids. Both the Green's function G and the screened Coulomb interaction W are obtained by solving linear Sternheimer equations, thus overcoming the need for a summation over unoccupied states. The code targets the calculation of accurate spe… ▽ More The SternheimerGW software uses time-dependent density-functional perturbation theory to evaluate GW quasiparticle band structures and spectral functions for solids. Both the Green's function G and the screened Coulomb interaction W are obtained by solving linear Sternheimer equations, thus overcoming the need for a summation over unoccupied states. The code targets the calculation of accurate spectral properties by convoluting G and W using a full frequency integration. The linear response approach allows users to evaluate the spectral function at arbitrary electron wavevectors, which is particularly useful for indirect band gap semiconductors and for simulations of angle-resolved photoelectron spectra. The software is parallelized efficiently, integrates with version 6.3 of Quantum Espresso, and is continuously monitored for stability using a test farm. △ Less

Submitted 10 December, 2018; originally announced December 2018.

Carrier Lifetimes and Polaronic Mass Enhancement in the Hybrid Halide Perovskite CH$_3$NH$_3$PbI$_3$ from Multiphonon Fröhlich Coupling

Authors: Martin Schlipf, Samuel Poncé, Feliciano Giustino

Abstract: We elucidate the nature of the electron-phonon interaction in the archetypal hybrid perovskite CH$_3$NH$_3$PbI$_3$ using ab initio many-body calculations and an exactly solvable model. We demonstrate that electrons and holes near the band edges primarily interact with three distinct groups of longitudinal-optical vibrations, in order of importance: the stretching of the Pb-I bond, the bending of t… ▽ More We elucidate the nature of the electron-phonon interaction in the archetypal hybrid perovskite CH$_3$NH$_3$PbI$_3$ using ab initio many-body calculations and an exactly solvable model. We demonstrate that electrons and holes near the band edges primarily interact with three distinct groups of longitudinal-optical vibrations, in order of importance: the stretching of the Pb-I bond, the bending of the Pb-I-Pb bonds, and the libration of the organic cations. These polar phonons induce ultrafast intraband carrier relaxation over timescales of 6-30 fs and yield polaron effective masses 28% heavier than the bare band masses. These findings allow us to rationalize previous experimental observations and provide a key to understanding carrier dynamics in halide perovskites. △ Less

Submitted 24 August, 2018; originally announced August 2018.

Journal ref: M. Schlipf, S. Ponce, F. Giustino, Phys. Rev. Lett. 121, 086402 (2018)