Showing 1–7 of 7 results for author: Gini, E

Two-dimensional imaging of the spin-orbit effective magnetic field

Authors: L. Meier, G. Salis, E. Gini, I. Shorubalko, K. Ensslin

Abstract: We report on spatially resolved measurements of the spin-orbit effective magnetic field in a GaAs/InGaAs quantum-well. Biased gate electrodes lead to an electric-field distribution in which the quantum-well electrons move according to the local orientation and magnitude of the electric field. This motion induces Rashba and Dresselhaus effective magnetic fields. The projection of the sum of these… ▽ More We report on spatially resolved measurements of the spin-orbit effective magnetic field in a GaAs/InGaAs quantum-well. Biased gate electrodes lead to an electric-field distribution in which the quantum-well electrons move according to the local orientation and magnitude of the electric field. This motion induces Rashba and Dresselhaus effective magnetic fields. The projection of the sum of these fields onto an external magnetic field is monitored locally by measuring the electron spin-precession frequency using time-resolved Faraday rotation. A comparison with simulations shows good agreement with the experimental data. △ Less

Submitted 7 December, 2007; originally announced December 2007.

Comments: 6 pages, 4 figures

Journal ref: Physical Review B 77, 035305 (2008)

Measurement of Rashba and Dresselhaus spin-orbit magnetic fields

Authors: Lorenz Meier, Gian Salis, Ivan Shorubalko, Emilio Gini, Silke Schoen, Klaus Ensslin

Abstract: Spin-orbit coupling is a manifestation of special relativity. In the reference frame of a moving electron, electric fields transform into magnetic fields, which interact with the electron spin and lift the degeneracy of spin-up and spin-down states. In solid-state systems, the resulting spin-orbit fields are referred to as Dresselhaus or Rashba fields, depending on whether the electric fields or… ▽ More Spin-orbit coupling is a manifestation of special relativity. In the reference frame of a moving electron, electric fields transform into magnetic fields, which interact with the electron spin and lift the degeneracy of spin-up and spin-down states. In solid-state systems, the resulting spin-orbit fields are referred to as Dresselhaus or Rashba fields, depending on whether the electric fields originate from bulk or structure inversion asymmetry, respectively. Yet, it remains a challenge to determine the absolute value of both contributions in a single sample. Here we show that both fields can be measured by optically monitoring the angular dependence of the electrons' spin precession on their direction of movement with respect to the crystal lattice. Furthermore, we demonstrate spin resonance induced by the spin-orbit fields. We apply our method to GaAs/InGaAs quantum-well electrons, but it can be used universally to characterise spin-orbit interactions in semiconductors, facilitating the design of spintronic devices. △ Less

Submitted 16 September, 2007; originally announced September 2007.

Journal ref: Nature Physics 3, 650 - 654 (2007)

Optimized stray-field-induced enhancement of the electron spin precession by buried Fe gates

Authors: L. Meier, G. Salis, N. Moll, C. Ellenberger, I. Shorubalko, U. Wahlen, K. Ensslin, E. Gini

Abstract: The magnetic stray field from Fe gates is used to modify the spin precession frequency of InGaAs/GaAs quantum-well electrons in an external magnetic field. By using an etching process to position the gates directly in the plane of the quantum well, the stray-field influence on the spin precession increases significantly compared with results from previous studies with top-gated structures. In li… ▽ More The magnetic stray field from Fe gates is used to modify the spin precession frequency of InGaAs/GaAs quantum-well electrons in an external magnetic field. By using an etching process to position the gates directly in the plane of the quantum well, the stray-field influence on the spin precession increases significantly compared with results from previous studies with top-gated structures. In line with numerical simulations, the stray-field-induced precession frequency increases as the gap between the ferromagnetic gates is reduced. The inhomogeneous stray field leads to additional spin dephasing. △ Less

Submitted 13 September, 2007; originally announced September 2007.

Comments: 4 pages, 2 figures

Journal ref: Applied Physics Letters 91, 162507 (2007)

Gate tunability of stray-field-induced electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating

Authors: L. Meier, G. Salis, C. Ellenberger, E. Gini, K. Ensslin

Abstract: Time-resolved Faraday rotation is used to measure the coherent electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating. We show that the electron spin precession frequency can be modified by applying a gate voltage of opposite polarity to neighboring bars. A tunability of the precession frequency of 0.5 GHz/V has been observed. Modulating the gate pot… ▽ More Time-resolved Faraday rotation is used to measure the coherent electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating. We show that the electron spin precession frequency can be modified by applying a gate voltage of opposite polarity to neighboring bars. A tunability of the precession frequency of 0.5 GHz/V has been observed. Modulating the gate potential with a gigahertz frequency allows the electron spin precession to be controlled on a nanosecond timescale. △ Less

Submitted 21 December, 2006; originally announced December 2006.

Journal ref: Phys. Rev. B 74, 245318 (2006)

Tunable few electron quantum dots in InAs nanowires

Authors: I. Shorubalko, A. Pfund, R. Leturcq, M. T. Borgström, F. Gramm, E. Müller, E. Gini, K. Ensslin

Abstract: Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using thr… ▽ More Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using three gates, we can form either single quantum dots, or two quantum dots in series along the nanowire. Measurements of the stability diagrams for both cases show that this method is suitable for producing high quality quantum dots in InAs. △ Less

Submitted 19 September, 2006; originally announced September 2006.

Comments: 8 pages, 4 figures

Journal ref: Nanotechnology 18, 044014 (2007)

Stray-field-induced modification of coherent spin dynamics

Authors: L. Meier, G. Salis, C. Ellenberger, E. Gini, K. Ensslin

Abstract: Electron spins in an InGaAs semiconductor quantum well are used as a magnetometer of magnetic stray-fields from patterned Fe stripes. Using time-resolved Faraday rotation, the coherent precession of quantum-well spins in the inhomogeneous field below the Fe stripes is measured for varying magnetic fields. Comparing with reference stripes made of Au, we find an enhancement of the spin precession… ▽ More Electron spins in an InGaAs semiconductor quantum well are used as a magnetometer of magnetic stray-fields from patterned Fe stripes. Using time-resolved Faraday rotation, the coherent precession of quantum-well spins in the inhomogeneous field below the Fe stripes is measured for varying magnetic fields. Comparing with reference stripes made of Au, we find an enhancement of the spin precession frequency proportional to the Fe magnetization, in line with a decrease of the spin decay time, which is attributed to the inhomogeneous magnetic stray-field in the quantum well layer. △ Less

Submitted 10 March, 2006; originally announced March 2006.

Journal ref: Appl. Phys. Lett. 88, 172501 (2006)

Individual scatterers as microscopic origin of equilibration between spin- polarized edge channels in the quantum Hall regime

Authors: Y. Acremann, T. Heinzel, K. Ensslin E. Gini, H. Melchior, M. Holland

Abstract: The equilibration length between spin-polarized edge states in the Quantum Hall regime is measured as a function of a gate voltage applied to an electrode on top of the edge channels. Reproducible fluctuations in the coupling are observed and interpreted as a mesoscopic fingerprint of single spin-flip scatterers which are turned on and off. A model to analyze macroscopic edge state coupling in t… ▽ More The equilibration length between spin-polarized edge states in the Quantum Hall regime is measured as a function of a gate voltage applied to an electrode on top of the edge channels. Reproducible fluctuations in the coupling are observed and interpreted as a mesoscopic fingerprint of single spin-flip scatterers which are turned on and off. A model to analyze macroscopic edge state coupling in terms of individual scatterers is developed, and characteristic values for these scatterers in our samples are extracted. For all samples investigated, the distance between spin-flip scatterers lies between the Drude and the quantum scattering length. △ Less

Submitted 1 September, 1998; originally announced September 1998.

Comments: 4 pages, 2 figures

Journal ref: Phys. Rev. B, 59 (1999) 2116