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Spin relaxation of localized electrons in monolayer MoSe$_2$: importance of random effective magnetic fields
Authors:
Eyüp Yalcin,
Ina V. Kalitukha,
Ilya A. Akimov,
Vladimir L. Korenev,
Olga S. Ken,
Jorge Puebla,
Yoshichika Otani,
Oscar M. Hutchings,
Daniel J. Gillard,
Alexander I. Tartakovskii,
Manfred Bayer
Abstract:
We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer MoSe$_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15~K for small magnetic fields of only a few mT. The spin relaxation of these electrons is determined by random effective magnetic fields due to a contact spin inte…
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We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer MoSe$_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15~K for small magnetic fields of only a few mT. The spin relaxation of these electrons is determined by random effective magnetic fields due to a contact spin interaction, namely the hyperfine interaction with the nuclei in MoSe$_2$ or the exchange interaction with the magnetic ions of the EuS film. From the magnetic field angular dependence of the spin polarization we evaluate the anisotropy of the intervalley electron $g$-factor and the spin relaxation time. The non-zero in-plane $g$-factor $|g_x|\approx 0.1$, the value of which is comparable to its dispersion, is attributed to randomly localized electrons in the MoSe$_2$ layer.
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Submitted 1 July, 2024;
originally announced July 2024.
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Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers
Authors:
Alessandro Catanzaro,
Armando Genco,
Charalambos Louca,
David A. Ruiz-Tijerina,
Daniel J. Gillard,
Luca Sortino,
Aleksey Kozikov,
Evgeny M. Alexeev,
Riccardo Pisoni,
Lee Hague,
Kenji Watanabe,
Takashi Taniguchi,
Klauss Ensslin,
Kostya S. Novoselov,
Vladimir Fal'ko,
Alexander I. Tartakovskii
Abstract:
Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and M…
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Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and Mo$_x$W$_{1-x}$Se$_2$ alloy and observe nontrivial tuning of the resultant bandstructure as a function of concentration $x$. We monitor this evolution by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In Mo$_x$W$_{1-x}$Se$_2$/WSe$_2$, we observe a strong IX energy shift of $\approx$100 meV for $x$ varied from 1 to 0.6. However, for $x<0.6$ this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe$_2$. We theoretically interpret this observation as the strong variation of the conduction band K valley for $x>0.6$, with IX PL arising from the K-K transition, while for $x<0.6$, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K-Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. Our work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties.
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Submitted 23 September, 2023;
originally announced September 2023.
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Spin-order-dependent magneto-elastic coupling in two dimensional antiferromagnetic MnPSe$_3$ observed through Raman spectroscopy
Authors:
Daniel J. Gillard,
Daniel Wolverson,
Oscar M. Hutchings,
Alexander I. Tartakovskii
Abstract:
Layered antiferromagnetic materials have emerged as a novel subset of the two-dimensional family providing a highly accessible regime with prospects for layer-number-dependent magnetism. Furthermore, transition metal phosphorous trichalcogenides, MPX3 (M = transition metal; X = chalcogen) provide a platform for investigating fundamental interactions between magnetic and lattice degrees of freedom…
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Layered antiferromagnetic materials have emerged as a novel subset of the two-dimensional family providing a highly accessible regime with prospects for layer-number-dependent magnetism. Furthermore, transition metal phosphorous trichalcogenides, MPX3 (M = transition metal; X = chalcogen) provide a platform for investigating fundamental interactions between magnetic and lattice degrees of freedom providing new insights for developing fields of spintronics and magnonics. Here, we use a combination of temperature dependent Raman spectroscopy and density functional theory to explore magnetic-ordering-dependent interactions between the manganese spin degree of freedom and lattice vibrations of the non-magnetic sub-lattice via a Kramers-Anderson super-exchange pathway in both bulk, and few-layer, manganese phosphorous triselenide (MnPSe$_3$). We observe a nonlinear temperature dependent shift of phonon modes predominantly associated with the non-magnetic sub-lattice, revealing their non-trivial spin-phonon coupling below the N{é}el temperature at 74 K, allowing us to extract mode-specific spin-phonon coupling constants.
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Submitted 8 January, 2024; v1 submitted 9 March, 2023;
originally announced March 2023.
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Giant effective Zeeman splitting in a monolayer semiconductor realized by spin-selective strong light-matter coupling
Authors:
T. P. Lyons,
D. J. Gillard,
C. Leblanc,
J. Puebla,
D. D. Solnyshkov,
L. Klompmaker,
I. A. Akimov,
C. Louca,
P. Muduli,
A. Genco,
M. Bayer,
Y. Otani,
G. Malpuech,
A. I. Tartakovskii
Abstract:
Strong coupling between light and the fundamental excitations of a two-dimensional electron gas (2DEG) are of foundational importance both to pure physics and to the understanding and development of future photonic nanotechnologies. Here we study the relationship between spin polarization of a 2DEG in a monolayer semiconductor, MoSe$_2$, and light-matter interactions modified by a zero-dimensional…
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Strong coupling between light and the fundamental excitations of a two-dimensional electron gas (2DEG) are of foundational importance both to pure physics and to the understanding and development of future photonic nanotechnologies. Here we study the relationship between spin polarization of a 2DEG in a monolayer semiconductor, MoSe$_2$, and light-matter interactions modified by a zero-dimensional optical microcavity. We find robust spin-susceptibility of the 2DEG to simultaneously enhance and suppress trion-polariton formation in opposite photon helicities. This leads to observation of a giant effective valley Zeeman splitting for trion-polaritons (g-factor >20), exceeding the purely trionic splitting by over five times. Going further, we observe robust effective optical non-linearity arising from the highly non-linear behaviour of the valley-specific strong light-matter coupling regime, and allowing all-optical tuning of the polaritonic Zeeman splitting from 4 to >10 meV. Our experiments lay the groundwork for engineering quantum-Hall-like phases with true unidirectionality in monolayer semiconductors, accompanied by giant effective photonic non-linearities rooted in many-body exciton-electron correlations.
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Submitted 13 September, 2021;
originally announced September 2021.
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Spin-valley dynamics in alloy-based transition metal dichalcogenide heterobilayers
Authors:
V. Kravtsov,
A. D. Liubomirov,
R. V. Cherbunin,
A. Catanzaro,
A. Genco,
D. Gillard,
E. M. Alexeev,
T. Ivanova,
E. Khestanova,
I. A. Shelykh,
I. V. Iorsh,
A. I. Tartakovskii,
M. S. Skolnick,
D. N. Krizhanovskii
Abstract:
Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and alignment of the constituent layers in the underlying dynamics remains largely unexplored. Here we study spin--valley relaxation dynamics in heterobilayers with di…
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Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and alignment of the constituent layers in the underlying dynamics remains largely unexplored. Here we study spin--valley relaxation dynamics in heterobilayers with different band structures engineered via the use of alloyed monolayer semiconductors. Through a combination of time-resolved Kerr rotation spectroscopic measurements and theoretical modelling for Mo$_{1-x}$W$_{x}$Se$_2$/WSe$_2$ samples with different chemical compositions and stacking angles, we uncover the roles of interlayer exciton recombination and charge carrier spin depolarization in the overall valley dynamics. Our results provide insights into the microscopic spin--valley polarization mechanisms in van der Waals heterostructures for the development of future 2D valleytronic devices.
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Submitted 7 July, 2020; v1 submitted 27 May, 2020;
originally announced May 2020.
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Interplay between spin proximity effect and charge-dependent exciton dynamics in MoSe$_2$ / CrBr$_3$ van der Waals heterostructures
Authors:
T. P. Lyons,
D. Gillard,
A. Molina-Sánchez,
A. Misra,
F. Withers,
P. S. Keatley,
A. Kozikov,
T. Taniguchi,
K. Watanabe,
K. S. Novoselov,
J. Fernández-Rossier,
A. I. Tartakovskii
Abstract:
Semiconducting ferromagnet-nonmagnet interfaces in van der Waals heterostructures present a unique opportunity to investigate magnetic proximity interactions dependent upon a multitude of phenomena including valley and layer pseudospins, moiré periodicity, or exceptionally strong Coulomb binding. Here, we report a charge-state dependency of the magnetic proximity effects between MoSe$_2$ and CrBr…
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Semiconducting ferromagnet-nonmagnet interfaces in van der Waals heterostructures present a unique opportunity to investigate magnetic proximity interactions dependent upon a multitude of phenomena including valley and layer pseudospins, moiré periodicity, or exceptionally strong Coulomb binding. Here, we report a charge-state dependency of the magnetic proximity effects between MoSe$_2$ and CrBr$_3$ in photoluminescence, whereby the valley polarization of the MoSe$_2$ trion state conforms closely to the local CrBr$_3$ magnetization, while the neutral exciton state remains insensitive to the ferromagnet. We attribute this to spin-dependent interlayer charge transfer occurring on timescales between the exciton and trion radiative lifetimes. Going further, we uncover by both the magneto-optical Kerr effect and photoluminescence a domain-like spatial topography of contrasting valley polarization, which we infer to be labyrinthine or otherwise highly intricate, with features smaller than 400 nm corresponding to our optical resolution. Our findings offer a unique insight into the interplay between short-lived valley excitons and spin-dependent interlayer tunnelling, while also highlighting MoSe$_2$ as a promising candidate to optically interface with exotic spin textures in van der Waals structures.
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Submitted 21 October, 2020; v1 submitted 8 April, 2020;
originally announced April 2020.
