Showing 1–3 of 3 results for author: Gildemeister, A E

In Situ Treatment of a Scanning Gate Microscopy Tip

Authors: A. E. Gildemeister, T. Ihn, M. Sigrist, K. Ensslin, D. C. Driscoll, A. C. Gossard

Abstract: In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and interpretation of the measurements. Contaminations picked up during topography scans may significantly alter this potential. We present an in situ high-field t… ▽ More In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and interpretation of the measurements. Contaminations picked up during topography scans may significantly alter this potential. We present an in situ high-field treatment of the tip that improves the tip-induced potential. A quantum dot was used to measure the tip-induced potential. △ Less

Submitted 27 June, 2007; v1 submitted 23 March, 2007; originally announced March 2007.

Comments: 3 pages, 1 figure, minor changes to fit published version

Journal ref: Appl. Phys. Lett. 90, 213113 (2007)

Measurement of the Tip-Induced Potential in Scanning Gate Experiments

Authors: A. E. Gildemeister, T. Ihn, M. Sigrist, K. Ensslin, D. C. Driscoll, A. C. Gossard

Abstract: We present a detailed experimental study on the electrostatic interaction between a quantum dot and the metallic tip of a scanning force microscope. Our method allowed us to quantitatively map the tip-induced potential and to determine the spatial dependence of the tip's lever arm with high resolution. We find that two parts of the tip-induced potential can be distinguished, one that depends on… ▽ More We present a detailed experimental study on the electrostatic interaction between a quantum dot and the metallic tip of a scanning force microscope. Our method allowed us to quantitatively map the tip-induced potential and to determine the spatial dependence of the tip's lever arm with high resolution. We find that two parts of the tip-induced potential can be distinguished, one that depends on the voltage applied to the tip and one that is independent of this voltage. The first part is due to the metallic tip while we interpret the second part as the effect of a charged dielectric particle on the tip. In the measurements of the lever arm we find fine structure that depends on which quantum state we study. The results are discussed in view of scanning gate experiments where the tip is used as a movable gate to study nanostructures. △ Less

Submitted 9 July, 2007; v1 submitted 21 February, 2007; originally announced February 2007.

Comments: 7 pages, 5 figures, minor changes to fit published version

Journal ref: Phys. Rev. B 75, 195338 (2007)

Imaging a Coupled Quantum Dot - Quantum Point Contact System

Authors: A. E. Gildemeister, T. Ihn, R. Schleser, K. Ensslin, D. C. Driscoll, A. C. Gossard

Abstract: We performed measurements on a quantum dot and a capacitively coupled quantum point contact by using the sharp metallic tip of a low-temperature scanning force microscope as a scanned gate. The quantum point contact served as a detector for charges on the dot or nearby. It allowed us to distinguish single electron charging events in several charge traps from charging events on the dot. We analyz… ▽ More We performed measurements on a quantum dot and a capacitively coupled quantum point contact by using the sharp metallic tip of a low-temperature scanning force microscope as a scanned gate. The quantum point contact served as a detector for charges on the dot or nearby. It allowed us to distinguish single electron charging events in several charge traps from charging events on the dot. We analyzed the tip-induced potential quantitatively and found its shape to be independent of the voltage applied to the tip within a certain range of parameters. We estimate that the trap density is below 0.1% of the doping density and that the interaction energy between the quantum dot and a trap is a significant portion of the dot's charging energy. Possibly, such charge traps are the reason for frequently observed parametric charge rearrangements. △ Less

Submitted 13 February, 2007; originally announced February 2007.

Comments: 6 pages, 5 figures

Journal ref: J. Appl. Phys. 102, 083703 (2007)