Showing 1–50 of 62 results for author: Gibertini, M

Coupling between magnetism and band structure in a 2D semiconductor

Authors: Lihuan Sun, Marco Gibertini, Alessandro Scarfato, Menghan Liao, Fan Wu, Alberto F. Morpurgo, Christoph Renner

Abstract: Van der Waals semiconducting magnets exhibit a cornucopia of physical phenomena originating from the interplay of their semiconducting and magnetic properties. However, a comprehensive understanding of how semiconducting processes and magnetism are coupled is lacking. We address this question by performing scanning tunneling spectroscopy (STS) measurements on the magnetic semiconductor CrPS$_4$, a… ▽ More Van der Waals semiconducting magnets exhibit a cornucopia of physical phenomena originating from the interplay of their semiconducting and magnetic properties. However, a comprehensive understanding of how semiconducting processes and magnetism are coupled is lacking. We address this question by performing scanning tunneling spectroscopy (STS) measurements on the magnetic semiconductor CrPS$_4$, and by comparing the results to photoluminescence experiments and density functional theory (DFT) calculations. Below the magnetic transition, STS exhibit multiple features absent in the paramagnetic state, caused by the proliferation of electronic bands due to spin splitting with a large ($\simeq 0.5$ eV) exchange energy. The energetic differences between the band edges determined by STS match all observed photoluminescence transitions, which also proliferate in the magnetic state. DFT calculations quantitatively predict the relative positions of all detected bands, explain which pairs of bands lead to radiative transitions, and also reproduce the measured spatial dependence of electronic wavefunctions. Our results reveal how all basic optoelectronic processes observed in CrPS$_4$ can be understood in terms of the evolution of the electronic band structure when entering the magnetic state, and allow us to conclude that individual bands are fully spin-polarized over a broad energy interval. △ Less

Submitted 15 May, 2025; originally announced May 2025.

Switching on and off the spin polarization of the conduction band in antiferromagnetic bilayer transistors

Authors: Fengrui Yao, Menghan Liao, Marco Gibertini, Cheol-Yeon Cheon, Xiaohanwen Lin, Fan Wu, Kenji Watanabe, Takashi Taniguchi, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo

Abstract: Antiferromagnetic conductors with suitably broken spatial symmetries host spin-polarized bands, which lead to transport phenomena commonly observed in metallic ferromagnets. In bulk materials, it is the given crystalline structure that determines whether symmetries are broken and spin-polarized bands are present. Here we demonstrate experimentally that double-gate transistors realized on bilayers… ▽ More Antiferromagnetic conductors with suitably broken spatial symmetries host spin-polarized bands, which lead to transport phenomena commonly observed in metallic ferromagnets. In bulk materials, it is the given crystalline structure that determines whether symmetries are broken and spin-polarized bands are present. Here we demonstrate experimentally that double-gate transistors realized on bilayers of van der Waals antiferromagnetic semiconductor CrPS4 allow the relevant symmetry to be controlled by a perpendicular electric displacement field. Such a level of control enables the spin-polarization of the conduction band to be switched on and off. Because conduction band states with opposite spin-polarizations are hosted in the different layers and are spatially separated, these devices also give control over the magnetization of the electrons that are accumulated electrostatically. Our experiments show that double-gated CrPS4 transistors provide a viable platform to create gate-induced conductors with near unity spin polarization at the Fermi level, as well as devices with a full electrostatic control of the total magnetization of the system. △ Less

Submitted 17 March, 2025; originally announced March 2025.

Roadmap on Quantum Magnetic Materials

Authors: Antonija Grubišić-Čabo, Marcos H. D. Guimarães, Dmytro Afanasiev, Jose H. Garcia Aguilar, Irene Aguilera, Mazhar N. Ali, Semonti Bhattacharyya, Yaroslav M. Blanter, Rixt Bosma, Zhiyuan Cheng, Zhiying Dan, Saroj P. Dash, Joaquín Medina Dueñas, Joaquín Fernandez-Rossier, Marco Gibertini, Sergii Grytsiuk, Maurits J. A. Houmes, Anna Isaeva, Chrystalla Knekna, Arnold H. Kole, Samer Kurdi, Jose Lado, Samuel Mañas-Valero, J. Marcelo J. Lopes, Damiano Marian , et al. (14 additional authors not shown)

Abstract: Fundamental research on two-dimensional (2D) magnetic systems based on van der Waals materials has been gaining traction rapidly since their recent discovery. With the increase of recent knowledge, it has become clear that such materials have also a strong potential for applications in devices that combine magnetism with electronics, optics, and nanomechanics. Nonetheless, many challenges still la… ▽ More Fundamental research on two-dimensional (2D) magnetic systems based on van der Waals materials has been gaining traction rapidly since their recent discovery. With the increase of recent knowledge, it has become clear that such materials have also a strong potential for applications in devices that combine magnetism with electronics, optics, and nanomechanics. Nonetheless, many challenges still lay ahead. Several fundamental aspects of 2D magnetic materials are still unknown or poorly understood, such as their often-complicated electronic structure, optical properties, and magnetization dynamics, and their magnon spectrum. To elucidate their properties and facilitate integration in devices, advanced characterization techniques and theoretical frameworks need to be developed or adapted. Moreover, developing synthesis methods which increase critical temperatures and achieve large-scale, high-quality homogeneous thin films is crucial before these materials can be used for real-world applications. Therefore, the field of 2D magnetic materials provides many challenges and opportunities for the discovery and exploration of new phenomena, as well as the development of new applications. This Roadmap presents the background, challenges, and potential research directions for various relevant topics in the field on the fundamentals, synthesis, characterization, and applications. We hope that this work can provide a strong starting point for young researchers in the field and provide a general overview of the key challenges for more experienced researchers. △ Less

Submitted 23 December, 2024; originally announced December 2024.

Comments: 87 pages, 24 figures. Roadmap based on the discussions during the workshop on Quantum Magnetic Materials hosted by the Lorentz Centre in Leiden, the Netherlands (Oct. 2023)

Broken symmetry solutions in one-dimensional lattice models via many-body perturbation theory

Authors: Matteo Quinzi, Tommaso Chiarotti, Marco Gibertini, Andrea Ferretti

Abstract: In this work we study self-consistent solutions in one-dimensional lattice models obtained via many-body perturbation theory. The Dyson equation is solved in a fully self-consistent manner via the algorithmic-inversion method based on the sum-over-poles representation (AIM-SOP) of dynamical operators. In particular, we focus on the GW approximation, analyzing the spectral properties and the emerge… ▽ More In this work we study self-consistent solutions in one-dimensional lattice models obtained via many-body perturbation theory. The Dyson equation is solved in a fully self-consistent manner via the algorithmic-inversion method based on the sum-over-poles representation (AIM-SOP) of dynamical operators. In particular, we focus on the GW approximation, analyzing the spectral properties and the emergence of possible magnetic- or charge-density-wave broken symmetry solutions. We start by validating our self-consistent AIM-SOP implementation by taking as test case the one-dimensional Hubbard model. We then move to the study of antiferromagnetic and charge density wave solutions in one-dimensional lattice models, taking into account a long-range Coulomb interaction between the electrons. We show that moving from local to non-local electronic interactions leads to a competition between antiferromagnetic and charge-density-wave broken symmetry solutions. Complementary, by solving the Sham-Schlüter equation, we can compute the non-interacting Green's function reproducing the same charge density of the interacting system. In turn, this allows for the evaluation of the derivative discontinuity of the Kohn-Sham (KS) potential, showing that its contribution to the fundamental gap can become dominating in some of the studied cases. △ Less

Submitted 20 March, 2025; v1 submitted 19 December, 2024; originally announced December 2024.

Comments: 22 pages, 19 figures. Abstract also available at https://journals.aps.org/prb/accepted/8f077O1fKbf1944946c73315e0b9be66f87320423

Journal ref: Phys. Rev. B 111, 125148 (2025)

Moire magnetism in CrBr3 multilayers emerging from differential strain

Authors: Fengrui Yao, Dario Rossi, Ivo A. Gabrovski, Volodymyr Multian, Nelson Hua, Kenji Watanabe, Takashi Taniguchi, Marco Gibertini, Ignacio Gutierrez-Lezama, Louk Rademaker, Alberto F. Morpurgo

Abstract: Interfaces between twisted 2D materials host a wealth of physical phenomena originating from the long-scale periodicity associated with the resulting moire structure. Besides twisting, an alternative route to create structures with comparably long or even longer periodicities is inducing a differential strain between adjacent layers in a van der Waals (vdW) material. Despite recent theoretical eff… ▽ More Interfaces between twisted 2D materials host a wealth of physical phenomena originating from the long-scale periodicity associated with the resulting moire structure. Besides twisting, an alternative route to create structures with comparably long or even longer periodicities is inducing a differential strain between adjacent layers in a van der Waals (vdW) material. Despite recent theoretical efforts analyzing its benefits, this route has not yet been implemented experimentally. Here we report evidence for the simultaneous presence of ferromagnetic and antiferromagnetic regions in CrBr3 _a hallmark of moire magnetism_ from the observation of an unexpected magnetoconductance in CrBr3 tunnel barriers with ferromagnetic Fe3GeTe2 and graphene electrodes. The observed magnetoconductance evolves with temperature and magnetic field as the magnetoconductance measured in small angle CrBr3 twisted junctions, in which moire magnetism occurs. Consistent with Raman measurements and theoretical modeling, we attribute the phenomenon to the presence of a differential strain in the CrBr3 multilayer, which locally modifies the stacking and the interlayer exchange between adjacent CrBr3 layers, resulting in spatially modulated spin textures. Our conclusions indicate that inducing differential strain in vdW multilayers is a viable strategy to create moire-like superlattices, which in the future may offer in-situ continuous tunability even at low temperatures. △ Less

Submitted 2 December, 2024; originally announced December 2024.

Journal ref: Nat Commun 15, 10377 (2024)

Unconventional gate-induced superconductivity in transition-metal dichalcogenides

Authors: Thibault Sohier, Marco Gibertini, Ivar Martin, Alberto F. Morpurgo

Abstract: Superconductivity in few-layer semiconducting transition metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a fully-consistent theoretical picture is still missing. Here we develop a realistic framework that combines the predictive power of first-principles simulations with the… ▽ More Superconductivity in few-layer semiconducting transition metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a fully-consistent theoretical picture is still missing. Here we develop a realistic framework that combines the predictive power of first-principles simulations with the versatility and insight of Bardeen-Cooper-Schrieffer gap equations to rationalize such experiments. The multi-valley nature of semiconducting TMDs is taken into account, together with the doping- and momentum-dependent electron-phonon and Coulomb interactions. Consistently with experiments, we find that superconductivity occurs when the electron density is large enough that the Q valleys get occupied, as a result of a large enhancement of electron-phonon interactions. Despite being phonon-driven, the superconducting state is predicted to be sensitive to Coulomb interactions, which can lead to the appearance of a relative sign difference between valleys and thus to a $s_{+-}$ character. We discuss qualitatively how such scenario may account for many of the observed physical phenomena for which no microscopic explanation has been found so far, including in particular the presence of a large subgap density of states, and the sample-dependent dome-shaped dependence of $T_c$ on accumulated electron density. Our results provide a comprehensive analysis of gate-induced superconductivity in semiconducting TMDs, and introduce an approach that will likely be valuable for other multivalley electronic systems, in which superconductivity occurs at relatively low electron density. △ Less

Submitted 23 September, 2024; v1 submitted 18 September, 2024; originally announced September 2024.

Comments: 17 pages, 8 figures

Spin-orbit control of Dirac points and end states in inverted gap nanowires

Authors: Andrea Vezzosi, Andrea Bertoni, Marco Gibertini, Guido Goldoni

Abstract: We predict that in InAs/GaSb nanowires with an inverted band alignment a transverse electric field induces a collapse of the hybridization gap, and a semimetal phase occurs. We use a self-consistent k.p approach and an adapted Bernevig-Hughes-Zhang model to show that massless Dirac points result from exact cancellation between the kinetic electron-hole coupling and the field-controlled spin-orbit… ▽ More We predict that in InAs/GaSb nanowires with an inverted band alignment a transverse electric field induces a collapse of the hybridization gap, and a semimetal phase occurs. We use a self-consistent k.p approach and an adapted Bernevig-Hughes-Zhang model to show that massless Dirac points result from exact cancellation between the kinetic electron-hole coupling and the field-controlled spin-orbit coupling. End states - mid-gap states localized at the extremes of a finite nanowire - are supported up to a critical field, but suddenly fade away as the system is driven through the semimetal phase, eventually evolving to trivial surface states, which expose a spin-orbit induced topological transition to the normal phase. △ Less

Submitted 30 August, 2024; originally announced September 2024.

Comments: 18 pages, includes Supplementary Information

Pressure-tuned many-body phases through $Γ$-K valleytronics in moiré bilayer WSe$_2$

Authors: Marta Brzezińska, Sergii Grytsiuk, Malte Rösner, Marco Gibertini, Louk Rademaker

Abstract: Recent experiments in twisted bilayer transition-metal dichalcogenides have revealed a variety of strongly correlated phenomena. To theoretically explore their origin, we combine here ab initio calculations with correlated model approaches to describe and study many-body effects in twisted bilayer WSe$_2$ under pressure. We find that the interlayer distance is a key factor for the electronic struc… ▽ More Recent experiments in twisted bilayer transition-metal dichalcogenides have revealed a variety of strongly correlated phenomena. To theoretically explore their origin, we combine here ab initio calculations with correlated model approaches to describe and study many-body effects in twisted bilayer WSe$_2$ under pressure. We find that the interlayer distance is a key factor for the electronic structure, as it tunes the relative energetic positions between the K and the $Γ$ valleys of the valence band maximum of the untwisted bilayer. As a result, applying uniaxial pressure to a twisted bilayer induces a charge-transfer from the K valley to the flat bands in the $Γ$ valley. Upon Wannierizing moiré bands from both valleys, we establish the relevant tight-binding model parameters and calculate the effective interaction strengths using the constrained random phase approximation. With this, we approximate the interacting pressure-doping phase diagram of WSe$_2$ moiré bilayers using self-consistent mean field theory. Our results establish twisted bilayer WSe$_2$ as a platform that allows the direct pressure-tuning of different correlated phases, ranging from Mott insulators, charge-valley-transfer insulators to Kondo lattice-like systems. △ Less

Submitted 10 April, 2024; originally announced April 2024.

Comments: 10 pages, 5 figures. Supplementary Information is separate pdf file

Influence of magnetism on vertical hopping transport in CrSBr

Authors: Xiaohanwen Lin, Fan Wu, Sara A. Lopéz-Paz, Fabian O. von Rohr, Marco Gibertini, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo

Abstract: We investigate the c-direction conduction in CrSBr in the linear regime, not accessible in other van der Waals (vdW) magnetic semiconductors, because of the unmeasurably low current. The resistivity -- $10^8$ to $10^{11}$ times larger than in the a- and b-directions -- exhibits magnetic state dependent thermally activated and variable range hopping transport. In the spin-flip phase at 2 T, the act… ▽ More We investigate the c-direction conduction in CrSBr in the linear regime, not accessible in other van der Waals (vdW) magnetic semiconductors, because of the unmeasurably low current. The resistivity -- $10^8$ to $10^{11}$ times larger than in the a- and b-directions -- exhibits magnetic state dependent thermally activated and variable range hopping transport. In the spin-flip phase at 2 T, the activation energy is 20 meV lower than in the antiferromagnetic state, due to a downshift of the conduction band edge, in agreement with ab-initio calculations. In the variable range hopping regime, the average hopping length decreases from twice the interlayer distance to the interlayer distance at 2 T, because in the antiferromagnetic state the large exchange energy impedes electrons hopping between adjacent layers. Our work demonstrates that the linear transport regime provides new information about electronic processes in vdW magnetic semiconductors, and shows how magnetism influences these processes both in real and reciprocal space. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Multiple antiferromagnetic phases and magnetic anisotropy in exfoliated CrBr$_3$ multilayers

Authors: Fengrui Yao, Volodymyr Multian, Zhe Wang, Nicolas Ubrig, Jérémie Teyssier, Fan Wu, Enrico Giannini, Marco Gibertini, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo

Abstract: In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures. Recent experimental searches for these textures have focused on CrI$_3$, known to exhibit either ferromagnetic or antiferromagnetic interlayer order, depending on l… ▽ More In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures. Recent experimental searches for these textures have focused on CrI$_3$, known to exhibit either ferromagnetic or antiferromagnetic interlayer order, depending on layer stacking. However, the very strong uniaxial anisotropy of CrI$_3$ disfavors smooth non-collinear phases in twisted bilayers. Here, we report the experimental observation of three distinct magnetic phases -- one ferromagnetic and two antiferromagnetic -- in exfoliated CrBr$_3$ multilayers, and reveal that the uniaxial anisotropy is significantly smaller than in CrI$_3$. These results are obtained by magnetoconductance measurements on CrBr$_3$ tunnel barriers and Raman spectroscopy, in conjunction with density functional theory calculations, which enable us to identify the stackings responsible for the different interlayer magnetic couplings. The detection of all locally stable magnetic states predicted to exist in CrBr$_3$ and the excellent agreement found between theory and experiments, provide complete information on the stacking-dependent interlayer exchange energy and establish twisted bilayer CrBr$_3$ as an ideal system to deterministically create non-collinear magnetic phases. △ Less

Submitted 16 August, 2023; originally announced August 2023.

On-site and inter-site Hubbard corrections in magnetic monolayers: The case of FePS$_3$ and CrI$_3$

Authors: Fatemeh Haddadi, Edward Linscott, Iurii Timrov, Nicola Marzari, Marco Gibertini

Abstract: Hubbard-corrected density-functional theory has proven to be successful in addressing self-interaction errors in 3D magnetic materials. However, the effectiveness of this approach for 2D magnetic materials has not been extensively explored. Here, we use PBEsol+$\textit{U}$ and its extensions PBEsol+$\textit{U}$+$\textit{V}$ to investigate the electronic, structural, and vibrational properties of 2… ▽ More Hubbard-corrected density-functional theory has proven to be successful in addressing self-interaction errors in 3D magnetic materials. However, the effectiveness of this approach for 2D magnetic materials has not been extensively explored. Here, we use PBEsol+$\textit{U}$ and its extensions PBEsol+$\textit{U}$+$\textit{V}$ to investigate the electronic, structural, and vibrational properties of 2D antiferromagnetic FePS$_3$ and ferromagnetic CrI$_3$, and compare the monolayers with their bulk counterparts. Hubbard parameters (on-site $\textit{U}$ and inter-site $\textit{V}$) are computed self-consistently using density-functional perturbation theory, thus avoiding any empirical assumptions. We show that for FePS$_3$ the Hubbard corrections are crucial in obtaining the experimentally observed insulating state with the correct crystal symmetry, providing also vibrational frequencies in good agreement with Raman experiments. For ferromagnetic CrI$_3$, we discuss how a straightforward application of Hubbard corrections worsens the results and introduces a spurious separation between spin-majority and minority conduction bands. Promoting the Hubbard $\textit{U}$ to be a spin-resolved parameter - that is, applying different (first-principles) values to the spin-up and spin-down manifolds - recovers a more physical picture of the electronic bands and delivers the best comparison with experiments. △ Less

Submitted 2 February, 2024; v1 submitted 9 June, 2023; originally announced June 2023.

Journal ref: Phys. Rev. Materials 8, 014007 (2024)

Electronic structure of few-layer black phosphorus from $μ$-ARPES

Authors: Florian Margot, Simone Lisi, Irène Cucchi, Edoardo Cappelli, Andrew Hunter, Ignacio Gutiérrez-Lezama, KeYuan Ma, Fabian von Rohr, Christophe Berthod, Francesco Petocchi, Samuel Poncé, Nicola Marzari, Marco Gibertini, Anna Tamai, Alberto F. Morpurgo, Felix Baumberger

Abstract: Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based micro-focus angle resolved photoemission ($μ$-ARPES) system to establish the electronic structure of 2… ▽ More Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based micro-focus angle resolved photoemission ($μ$-ARPES) system to establish the electronic structure of 2-9 layer BP from experiment. Our measurements unveil ladders of anisotropic, quantized subbands at energies that deviate from the scaling observed in conventional semiconductor quantum wells. We quantify the anisotropy of the effective masses and determine universal tight-binding parameters which provide an accurate description of the electronic structure for all thicknesses. △ Less

Submitted 1 June, 2023; originally announced June 2023.

Comments: Supporting Information available upon request

Journal ref: Nano Lett. 2023, 23 6433-6439

Magnetism-induced band-edge shift as mechanism for magnetoconductance in CrPS$_4$ transistors

Authors: Fan Wu, Marco Gibertini, Kenji Watanabe, Takashi Taniguchi, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: Transistors realized on 2D antiferromagnetic semiconductor CrPS$_4$ exhibit large magnetoconductance, due to magnetic-field-induced changes in magnetic state. The microscopic mechanism coupling conductance and magnetic state is not understood. We identify it by analyzing the evolution of the parameters determining the transistor behavior -- carrier mobility and threshold voltage -- with temperatur… ▽ More Transistors realized on 2D antiferromagnetic semiconductor CrPS$_4$ exhibit large magnetoconductance, due to magnetic-field-induced changes in magnetic state. The microscopic mechanism coupling conductance and magnetic state is not understood. We identify it by analyzing the evolution of the parameters determining the transistor behavior -- carrier mobility and threshold voltage -- with temperature and magnetic field. For temperatures T near the Néel temperature $T_N$, the magnetoconductance originates from a mobility increase due to the applied magnetic field that reduces spin fluctuation induced disorder. For $T << T_N$, instead, what changes is the threshold voltage, so that increasing the field at fixed gate voltage increases the density of accumulated electrons. The phenomenon is explained by a conduction band-edge shift correctly predicted by \emph{ab-initio} calculations. Our results demonstrate that the bandstructure of CrPS$_4$ depends on its magnetic state and reveal a mechanism for magnetoconductance that had not been identified earlier. △ Less

Submitted 21 August, 2023; v1 submitted 25 April, 2023; originally announced April 2023.

Gate-controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D magnetic semiconductor CrPS$_4$

Authors: Fan Wu, Marco Gibertini, Kenji Watanabe, Takashi Taniguchi, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor operation. Here, we show that exfoliated layers of CrPS$_4$ -- a 2D layered antiferromagnetic semiconductor whose bandwidth approaches 1 eV -- allow the r… ▽ More Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor operation. Here, we show that exfoliated layers of CrPS$_4$ -- a 2D layered antiferromagnetic semiconductor whose bandwidth approaches 1 eV -- allow the realization of FETs that operate properly down to cryogenic temperature. Using these devices, we perform conductance measurements as a function of temperature and magnetic field, to determine the full magnetic phase diagram, which includes a spin-flop and a spin-flip phase. We find that the magnetoconductance depends strongly on gate voltage, reaching values as high as 5000 % near the threshold for electron conduction. The gate voltage also allows the magnetic states to be tuned, despite the relatively large thickness of the CrPS$_4$ multilayers employed in our study. Our results show the need to employ 2D magnetic semiconductors with sufficiently large bandwidth to realize properly functioning transistors, and identify a candidate material to realize a fully gate-tunable half-metallic conductor. △ Less

Submitted 2 May, 2023; v1 submitted 25 January, 2023; originally announced January 2023.

Comments: Accepted for publication in Advanced Materials

Journal ref: Advanced Materials 2023

Novel materials in the Materials Cloud 2D database

Authors: Davide Campi, Nicolas Mounet, Marco Gibertini, Giovanni Pizzi, Nicola Marzari

Abstract: Two-dimensional (2D) materials are among the most promising candidates for beyond-silicon electronic, optoelectronic and quantum computing applications. Recently, their recognized importance sparked a push to discover and characterize novel 2D materials. Within a few years, the number of experimentally exfoliated or synthesized 2D materials went from a couple of dozens to more than a hundred, with… ▽ More Two-dimensional (2D) materials are among the most promising candidates for beyond-silicon electronic, optoelectronic and quantum computing applications. Recently, their recognized importance sparked a push to discover and characterize novel 2D materials. Within a few years, the number of experimentally exfoliated or synthesized 2D materials went from a couple of dozens to more than a hundred, with the number of theoretically predicted compounds reaching a few thousands. In 2018 we first contributed to this effort with the identification of 1825 compounds that are either easily (1036) or potentially (789) exfoliable from experimentally known 3D compounds. Here, we report on a major expansion of this 2D portfolio thanks to the extension of the screening protocol to an additional experimental database (MPDS) as well as to the updated versions of the two databases (ICSD and COD) used in our previous work. This expansion has led to the discovery of additional 1252 unique monolayers, bringing the total to 3077 compounds and, notably, almost doubling the number of easily exfoliable materials (2004). Moreover, we optimized the structural properties of all these monolayers and explored their electronic structure with a particular emphasis on those rare large-bandgap 2D materials that could be precious to isolate 2D field effect transistors channels. Finally, for each material containing up to 6 atoms per unit cell, we identified the best candidates to form commensurate heterostructures, balancing requirements on the supercells size and minimal strain. △ Less

Submitted 20 October, 2022; originally announced October 2022.

Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials

Authors: Samuel Poncé, Miquel Royo, Massimiliano Stengel, Nicola Marzari, Marco Gibertini

Abstract: Charge transport plays a crucial role in manifold potential applications of two-dimensional materials, including field effect transistors, solar cells, and transparent conductors. At most operating temperatures, charge transport is hindered by scattering of carriers by lattice vibrations. Assessing the intrinsic phonon-limited carrier mobility is thus of paramount importance to identify promising… ▽ More Charge transport plays a crucial role in manifold potential applications of two-dimensional materials, including field effect transistors, solar cells, and transparent conductors. At most operating temperatures, charge transport is hindered by scattering of carriers by lattice vibrations. Assessing the intrinsic phonon-limited carrier mobility is thus of paramount importance to identify promising candidates for next-generation devices. Here we provide a framework to efficiently compute the drift and Hall carrier mobility of two-dimensional materials through the Boltzmann transport equation by relying on a Fourier-Wannier interpolation. Building on a recent formulation of long-range contributions to dynamical matrices and phonon dispersions [Phys. Rev. X 11, 041027 (2021)], we extend the approach to electron-phonon coupling including the effect of dynamical dipoles and quadrupoles. We identify an unprecedented contribution associated with the Berry connection that is crucial to preserve the Wannier-gauge covariance of the theory. This contribution is not specific to 2D crystals, but also concerns the 3D case, as we demonstrate via an application to bulk SrO. We showcase our method on a wide selection of relevant monolayers ranging from SnS2 to MoS2, graphene, BN, InSe, and phosphorene. We also discover a non-trivial temperature evolution of the Hall hole mobility in InSe whereby the mobility increases with temperature above 150 K due to the mexican-hat electronic structure of the InSe valence bands. Overall, we find that dynamical quadrupoles are essential and can impact the carrier mobility in excess of 75%. △ Less

Submitted 4 April, 2023; v1 submitted 20 July, 2022; originally announced July 2022.

Comments: 31 pages and 16 figures

Accurate prediction of Hall mobilities in two-dimensional materials through gauge-covariant quadrupolar contributions

Authors: Samuel Poncé, Miquel Royo, Marco Gibertini, Nicola Marzari, Massimiliano Stengel

Abstract: Despite considerable efforts, accurate computations of electron-phonon and carrier transport properties of low-dimensional materials from first principles have remained elusive. By building on recent advances in the description of long-range electrostatics, we develop a general approach to the calculation of electron-phonon couplings in two-dimensional materials. We show that the nonanalytic behav… ▽ More Despite considerable efforts, accurate computations of electron-phonon and carrier transport properties of low-dimensional materials from first principles have remained elusive. By building on recent advances in the description of long-range electrostatics, we develop a general approach to the calculation of electron-phonon couplings in two-dimensional materials. We show that the nonanalytic behavior of the electron-phonon matrix elements depends on the Wannier gauge, but that a missing Berry connection restores invariance to quadrupolar order. We showcase these contributions in a MoS$_2$ monolayer, calculating intrinsic drift and Hall mobilities with precise Wannier interpolations. We also find that the contributions of dynamical quadrupoles to the scattering potential are essential, and that their neglect leads to errors of 23% and 76% in the room temperature electron and hole Hall mobilities, respectively. △ Less

Submitted 4 April, 2023; v1 submitted 20 July, 2022; originally announced July 2022.

Comments: 6 pages and 2 figures

Quasi 1D electronic transport in a 2D magnetic semiconductor

Authors: Fan Wu, Ignacio Gutiérrez-Lezama, Sara A. Lopéz-Paz, Marco Gibertini, Kenji Watanabe, Takashi Taniguchi, Fabian O. von Rohr, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: We investigate electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor that is attracting attention because of its magnetic properties. We find an extremely pronounced anisotropy that manifests itself in qualitative and quantitative differences of all quantities measured along the in-plane \textit{a} and \textit{b} crystallographic directions. In particular, we observe a q… ▽ More We investigate electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor that is attracting attention because of its magnetic properties. We find an extremely pronounced anisotropy that manifests itself in qualitative and quantitative differences of all quantities measured along the in-plane \textit{a} and \textit{b} crystallographic directions. In particular, we observe a qualitatively different dependence of the conductivities $σ_a$ and $σ_b$ on temperature and gate voltage, accompanied by orders of magnitude differences in their values ($σ_b$/$σ_a \approx 3\cdot10^2-10^5$ at low temperature and large negative gate voltage). We also find a different behavior of the longitudinal magnetoresistance in the two directions, and the complete absence of the Hall effect in transverse resistance measurements. These observations appear not to be compatible with a description in terms of conventional band transport of a 2D doped semiconductor. The observed phenomenology -- together with unambiguous signatures of a 1D van Hove singularity that we detect in energy resolved photocurrent measurements -- indicate that electronic transport through CrSBr multilayers is better interpreted by considering the system as formed by weakly and incoherently coupled 1D wires, than by conventional 2D band transport. We conclude that CrSBr is the first 2D semiconductor to show distinctly quasi 1D electronic transport properties. △ Less

Submitted 23 February, 2022; originally announced February 2022.

Comments: Accepted for publication in Advanced Materials

Journal ref: Adv.Mater.2022, 34, 2109759 (2022)

Twist-resilient and robust ferroelectric quantum spin Hall insulators driven by van der Waals interactions

Authors: Antimo Marrazzo, Marco Gibertini

Abstract: Quantum spin Hall insulators (QSHI) have been proposed to power a number of applications, many of which rely on the possibility to switch on and off the non-trivial topology. Typically this control is achieved through strain or external electric fields, which require energy consumption to be maintained. On the contrary, a non-volatile mechanism would be highly beneficial and could be realized thro… ▽ More Quantum spin Hall insulators (QSHI) have been proposed to power a number of applications, many of which rely on the possibility to switch on and off the non-trivial topology. Typically this control is achieved through strain or external electric fields, which require energy consumption to be maintained. On the contrary, a non-volatile mechanism would be highly beneficial and could be realized through ferroelectricity if opposite polarization states are associated with different topological phases. While this is not possible in a single ferroelectric material where the two polarization states are related by inversion, the necessary asymmetry could be introduced by combining a ferroelectric layer with another two-dimensional (2D) trivial insulator. Here, by means of first-principles simulations, not only we propose that this is a promising strategy to engineer non-volatile ferroelectric control of topological order in 2D heterostructures, but also that the effect is robust and can survive up to room temperature, irrespective of the weak van der Waals coupling between the layers. We illustrate the general idea by considering a heterostructure made of a well-known ferroelectric material, In$_2$Se$_3$, and a suitably chosen, easily exfoliable trivial insulator, CuI. In one polarization state the system is trivial, while it becomes a QSHI with a robust band gap upon polarization reversal. Remarkably, the topological band gap is mediated by the interlayer hybridization and allows to maximise the effect of intralayer spin-orbit coupling, promoting a robust ferroelectric topological phase that could not exist in monolayer materials and is resilient against relative orientation and lattice matching between the layers. △ Less

Submitted 8 August, 2022; v1 submitted 14 December, 2021; originally announced December 2021.

Comments: 13 pages, 8 figures + supplementary (6 pages, 3 figures)

Journal ref: npj 2D Mater Appl 6, 30 (2022)

Quenching the band gap of 2D semiconductors with a perpendicular electric field

Authors: Daniil Domaretskiy, Marc Philippi, Marco Gibertini, Nicolas Ubrig, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo

Abstract: The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite band gap in graphene bilayers, which naturally are zero-gap semiconductors. So far, however, the same principle could not be employed to control a broader class of… ▽ More The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite band gap in graphene bilayers, which naturally are zero-gap semiconductors. So far, however, the same principle could not be employed to control a broader class of materials, because the required electric fields are beyond reach in current devices. To overcome this limitation, we have realized double ionic gated transistors that enable the application of very large electric fields. Using these devices, we show that the band gap of few-layer semiconducting transition metal dichalcogenides can be continuously suppressed from 1.5 eV to zero. Our results illustrate an unprecedented level of control of the band structures of 2D semiconductors, which is important for future research and applications. △ Less

Submitted 13 August, 2021; originally announced August 2021.

Comments: Submitted paper

Journal ref: Nature Nanotechnology, tbd (2022)

Magnetization dependent tunneling conductance of ferromagnetic barriers

Authors: Zhe Wang, Ignacio Gutiérrez-Lezama, Dumitru Dumcenco, Nicolas Ubrig, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Marco Gibertini, Alberto F. Morpurgo

Abstract: Recent experiments on van der Waals antiferrmagnets such as CrI3, CrCl3 and MnPS3 have shown that using atomically thin layers as tunnel barriers and measuring the temperature ($T$) and magnetic field ($H$) dependence of the conductance allows their magnetic phase diagram to be mapped. In contrast, barriers made of CrBr3 -- the sole van der Waals ferromagnet investigated in this way -- were found… ▽ More Recent experiments on van der Waals antiferrmagnets such as CrI3, CrCl3 and MnPS3 have shown that using atomically thin layers as tunnel barriers and measuring the temperature ($T$) and magnetic field ($H$) dependence of the conductance allows their magnetic phase diagram to be mapped. In contrast, barriers made of CrBr3 -- the sole van der Waals ferromagnet investigated in this way -- were found to exhibit small and featureless magnetoconductance, seemingly carrying little information about magnetism. Here we show that -- despite these early results -- the conductance of CrBr3 tunnel barriers does provide detailed information about the magnetic state of atomically thin CrBr3 crystals for $T$ both above and below the Curie temperature ($T_C = 32$ K). Our analysis establishes that the tunneling conductance depends on $H$ and $T$ exclusively through the magnetization $M(H,T)$, over the entire temperature range investigated (2-50 K). The phenomenon is reproduced in detail by the spin-dependent Fowler-Nordheim model for tunneling, and is a direct manifestation of the spin splitting of the CrBr3 conduction band. These findings demonstrate that the investigation of magnetism by tunneling conductance measurements is not limited to antiferromagnets, but can also be applied to ferromagnetic materials. △ Less

Submitted 25 June, 2021; originally announced June 2021.

Journal ref: Nat Commun 12, 6659 (2021)

Shear and breathing modes of layered materials

Authors: Giovanni Pizzi, Silvia Milana, Andrea C. Ferrari, Nicola Marzari, Marco Gibertini

Abstract: Layered materials (LMs), such as graphite, hexagonal boron nitride, and transition-metal dichalcogenides, are at the centre of an ever increasing research effort, due to their scientific and technological relevance. Raman and infrared spectroscopies are accurate, non-destructive, approaches to determine a wide range of properties, including the number of layers and the strength of the interlayer i… ▽ More Layered materials (LMs), such as graphite, hexagonal boron nitride, and transition-metal dichalcogenides, are at the centre of an ever increasing research effort, due to their scientific and technological relevance. Raman and infrared spectroscopies are accurate, non-destructive, approaches to determine a wide range of properties, including the number of layers and the strength of the interlayer interactions. Here, we present a general approach to predict the complete spectroscopic fan diagrams, i.e., the relations between frequencies and number of layers, $N$, for the optically-active shear and layer-breathing modes of any multilayer comprising $N \geq 2$ identical layers. In order to achieve this, we combine a description of the normal modes in terms of a one-dimensional mechanical model, with symmetry arguments that describe the evolution of the point group as a function of $N$. Group theory is then used to identify which modes are Raman and/or infrared active, and to provide diagrams of the optically-active modes for any stack composed of identical layers. We implement the method and algorithms in an open-source tool directly available on the Materials Cloud portal, to assist any researcher in the prediction and interpretation of such diagrams. Our work will underpin all future efforts on Raman and Infrared characterization of known, and yet not investigated, LMs. △ Less

Submitted 30 November, 2020; originally announced November 2020.

Comments: 30 pages (including appendices and tables), 7 figures

Journal ref: G. Pizzi et al., ACS Nano 15, 12509 (2021)

Remote free-carrier screening to boost the mobility of Fröhlich-limited 2D semiconductors

Authors: Thibault Sohier, Marco Gibertini, Matthieu Verstraete

Abstract: Van der Waals heterostructures provide a versatile tool to not only protect or control, but also enhance the properties of a 2D material. We use ab initio calculations and semi-analytical models to find strategies which boost the mobility of a current-carrying 2D semiconductor within an heterostructure. Free-carrier screening from a metallic "screener" layer remotely suppresses electron-phonon int… ▽ More Van der Waals heterostructures provide a versatile tool to not only protect or control, but also enhance the properties of a 2D material. We use ab initio calculations and semi-analytical models to find strategies which boost the mobility of a current-carrying 2D semiconductor within an heterostructure. Free-carrier screening from a metallic "screener" layer remotely suppresses electron-phonon interactions in the current-carrying layer. This concept is most effective in 2D semiconductors whose scattering is dominated by screenable electron-phonon interactions, and in particular the Fröhlich coupling to polar-optical phonons. Such materials are common and characterised by overall low mobilities in the small doping limit, and much higher ones when the 2D material is doped enough for electron-phonon interactions to be screened by its own free carriers. We use GaSe as a prototype and place it in a heterostructure with doped graphene as the "screener" layer and BN as a separator. We develop an approach to determine the electrostatic response of any heterostructure by combining the responses of the individual layers computed within density-functional perturbation theory. Remote screening from graphene can suppress the long-wavelength Fröhlich interaction, leading to a consistently high mobility around $500$ to $600$ cm$^2$/Vs for carrier densities in GaSe from $10^{11}$ to $10^{13}$ cm$^{-2}$. Notably, the low-doping mobility is enhanced by a factor 2.5. This remote free-carrier screening is more efficient than more conventional manipulation of the dielectric environment, and it is most effective when the separator (BN) is thin. △ Less

Submitted 15 February, 2021; v1 submitted 10 November, 2020; originally announced November 2020.

Comments: 20 pages, 14 figures

Journal ref: Phys. Rev. Materials 5, 024004 (2021)

Magnetism and stability of all primitive stacking patterns in bilayer chromium trihalides

Authors: Marco Gibertini

Abstract: Chromium trihalides, CrX$_3$ (with X = Cl, Br, I), are a family of layered magnetic materials that can be easily exfoliated to provide ferromagnetic monolayers. When two layers are stacked together to form a bilayer the interlayer exchange coupling can be either ferromagnetic or antiferromagnetic depending on the stacking sequence. Here we combine crystallographic arguments based on the close-pack… ▽ More Chromium trihalides, CrX$_3$ (with X = Cl, Br, I), are a family of layered magnetic materials that can be easily exfoliated to provide ferromagnetic monolayers. When two layers are stacked together to form a bilayer the interlayer exchange coupling can be either ferromagnetic or antiferromagnetic depending on the stacking sequence. Here we combine crystallographic arguments based on the close-packing condition with first-principles simulations to enumerate all possible stacking patterns in CrX$_3$ bilayers that preserve the spatial periodicity of each layer. We recover all configurations observed in bulk crystals and disclose stacking sequences with no bulk counterpart where the two layers have opposite chirality. Stacking sequences are ranked according to their relative stability and a preferential interlayer magnetic ordering is assigned to each of them. Simulations provide a consistent picture to frame all current experimental observations on bulk and exfoliated CrX$_3$ crystals, with interesting implications for future measurements, including synthetic bilayers with non-standard stacking patterns. △ Less

Submitted 25 August, 2020; originally announced August 2020.

Comments: 9+epsilon pages, 4 figures, 3 tables

Profiling novel high-conductivity 2D semiconductors

Authors: Thibault Sohier, Marco Gibertini, Nicola Marzari

Abstract: When complex mechanisms are involved, pinpointing high-performance materials within large databases is a major challenge in materials discovery. We focus here on phonon-limited conductivities, and study 2D semiconductors doped by field effects. Using state-of-the-art density-functional perturbation theory and Boltzmann transport equation, we discuss 11 monolayers with outstanding transport propert… ▽ More When complex mechanisms are involved, pinpointing high-performance materials within large databases is a major challenge in materials discovery. We focus here on phonon-limited conductivities, and study 2D semiconductors doped by field effects. Using state-of-the-art density-functional perturbation theory and Boltzmann transport equation, we discuss 11 monolayers with outstanding transport properties. These materials are selected from a computational database of exfoliable materials providing monolayers that are dynamically stable and that do not have more than 6 atoms per unit cell. We first analyse electron-phonon scattering in two well-known systems: electron-doped InSe and hole-doped phosphorene. Both are single-valley systems with weak electron-phonon interactions, but they represent two distinct pathways to fast transport: a steep and deep isotropic valley for the former and strongly anisotropic electron-phonon physics for the latter. We identify similar features in the database and compute the conductivities of the relevant monolayers. This process yields several high-conductivity materials, some of them only very recently emerging in the literature (GaSe, Bi$_2$SeTe$_2$, Bi$_2$Se$_3$, Sb$_2$SeTe$_2$), others never discussed in this context (AlLiTe$_2$, BiClTe, ClGaTe, AuI). Comparing these 11 monolayers in detail, we discuss how the strength and angular dependency of the electron-phonon scattering drives key differences in the transport performance of materials despite similar valley structure. We also discuss the high conductivity of hole-doped WSe$_2$, and how this case study shows the limitations of a selection process that would be based on band properties alone. △ Less

Submitted 31 July, 2020; originally announced July 2020.

Journal ref: 2D Materials 8, 015025 (2021)

Gate-tunable imbalanced Kane-Mele model in encapsulated bilayer jacutingaite

Authors: Louk Rademaker, Marco Gibertini

Abstract: We study free, capped and encapsulated bilayer jacutingaite Pt$_2$HgSe$_3$ from first principles. While the free standing bilayer is a large gap trivial insulator, we find that the encapsulated structure has a small trivial gap due to the competition between sublattice symmetry breaking and sublattice-dependent next-nearest-neighbor hopping. Upon the application of a small perpendicular electric f… ▽ More We study free, capped and encapsulated bilayer jacutingaite Pt$_2$HgSe$_3$ from first principles. While the free standing bilayer is a large gap trivial insulator, we find that the encapsulated structure has a small trivial gap due to the competition between sublattice symmetry breaking and sublattice-dependent next-nearest-neighbor hopping. Upon the application of a small perpendicular electric field, the encapsulated bilayer undergoes a topological transition towards a quantum spin Hall insulator. We find that this topological transition can be qualitatively understood by modeling the two layers as uncoupled and described by an imbalanced Kane-Mele model that takes into account the sublattice imbalance and the corresponding inversion-symmetry breaking in each layer. Within this picture, bilayer jacutingaite undergoes a transition from a 0+0 state, where each layer is trivial, to a 0+1 state, where an unusual topological state relying on Rashba-like spin orbit coupling emerges in only one of the layers. △ Less

Submitted 23 April, 2021; v1 submitted 20 July, 2020; originally announced July 2020.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. Materials 5, 044201 (2021)

Determining the phase diagram of atomically thin layered antiferromagnet CrCl$_3$

Authors: Zhe Wang, Marco Gibertini, Dumitru Dumcenco, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Alberto F. Morpurgo

Abstract: Changes in the spin configuration of atomically-thin, magnetic van-der-Waals multilayers can cause drastic modifications in their opto-electronic properties. Conversely, the opto-electronic response of these systems provides information about the magnetic state, very difficult to obtain otherwise. Here we show that in CrCl$_3$ multilayers, the dependence of the tunnelling conductance on applied ma… ▽ More Changes in the spin configuration of atomically-thin, magnetic van-der-Waals multilayers can cause drastic modifications in their opto-electronic properties. Conversely, the opto-electronic response of these systems provides information about the magnetic state, very difficult to obtain otherwise. Here we show that in CrCl$_3$ multilayers, the dependence of the tunnelling conductance on applied magnetic field ($H$), temperature ($T$), and number of layers ($N$) tracks the evolution of the magnetic state, enabling the magnetic phase diagram of these systems to be determined experimentally. Besides a high-field spin-flip transition occurring for all thicknesses, the in-plane magnetoconductance exhibits an even-odd effect due to a low-field spin-flop transition. If the layer number $N$ is even, the transition occurs at $μ_0 H \sim 0$ T due to the very small in-plane magnetic anisotropy, whereas for odd $N$ the net magnetization of the uncompensated layer causes the transition to occur at finite $H$. Through a quantitative analysis of the phenomena, we determine the interlayer exchange coupling as well as the staggered magnetization, and show that in CrCl$_3$ shape anisotropy dominates. Our results reveal the rich behaviour of atomically-thin layered antiferromagnets with weak magnetic anisotropy. △ Less

Submitted 11 November, 2019; originally announced November 2019.

Comments: 10 pages, 5 figures (supplementary information as ancillary file)

Journal ref: Nat. Nanotechnol. 14, 1116 (2019)

Spin-flop transition in atomically thin MnPS$_3$ crystals

Authors: Gen Long, Hugo Henck, Marco Gibertini, Dumitru Dumcenco, Zhe Wang, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Alberto F. Morpurgo

Abstract: The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI$_3$ and CrCl$_3$ can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field ($H$) and temperature ($T$). This is possible because the tunneling magnetoresistance originates from a spin-filtering effect sensitive to the relative orientation of the magnetization in d… ▽ More The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI$_3$ and CrCl$_3$ can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field ($H$) and temperature ($T$). This is possible because the tunneling magnetoresistance originates from a spin-filtering effect sensitive to the relative orientation of the magnetization in different layers, i.e., to the magnetic state of the multilayers. For systems in which antiferromagnetism occurs within an individual layer, however, no spin-filtering occurs: it is unclear whether this strategy can work. To address this issue, we investigate tunnel transport through atomically thin crystals of MnPS$_3$, a van der Waals semiconductor that in the bulk exhibits easy-axis antiferromagnetic order within the layers. For thick multilayers below $T\simeq 78$ K, a $T$-dependent magnetoresistance sets-in at $\sim 5$ T, and is found to track the boundary between the antiferromagnetic and the spin-flop phases known from bulk magnetization measurements. The magnetoresistance persists down to individual MnPS$_3$ monolayers with nearly unchanged characteristic temperature and magnetic field scales, albeit with a different dependence on $H$. We discuss the implications of these finding for the magnetic state of atomically thin MnPS$_3$ crystals, conclude that antiferromagnetic correlations persist down to the level of individual monolayers, and that tunneling magnetoresistance does allow magnetism in 2D insulating materials to be detected even in the absence of spin-filtering. △ Less

Submitted 29 October, 2019; originally announced October 2019.

Comments: 19 pages, 4 figures + supplementary (10 pages, 5 figures)

Journal ref: Nano Lett. 20, 2452-2459 (2020)

Multi-frequency Shubnikov-de Haas oscillations in topological semimetal Pt$_2$HgSe$_3$

Authors: Diego Mauro, Hugo Henck, Marco Gibertini, Michele Filippone, Enrico Giannini, Ignacio Gutierrez-Lezama, Alberto F. Morpurgo

Abstract: Monolayer jacutingaite (Pt$_2$HgSe$_3$) has been recently identified as a candidate quantum spin Hall system with a 0.5 eV band gap, but no transport measurements have been performed so far on this material, neither in monolayer nor in the bulk. By using a dedicated high-pressure technique, we grow crystals enabling the exfoliation of 50-100 nm thick layers and the realization of devices for contr… ▽ More Monolayer jacutingaite (Pt$_2$HgSe$_3$) has been recently identified as a candidate quantum spin Hall system with a 0.5 eV band gap, but no transport measurements have been performed so far on this material, neither in monolayer nor in the bulk. By using a dedicated high-pressure technique, we grow crystals enabling the exfoliation of 50-100 nm thick layers and the realization of devices for controlled transport experiments. Magnetoresistance measurements indicate that jacutingaite is a semimetal, exhibiting Shubnikov-de Haas (SdH) resistance oscillations with a multi-frequency spectrum. We adapt the Lifshitz-Kosevich formula to analyze quantitatively the SdH resistance oscillations in the presence of multiple frequencies, and find that the experimental observations are overall reproduced well by band structure ab-initio calculations for bulk jacutingaite. Together with the relatively high electron mobility extracted from the experiments ($\approx 2000$ cm$^2$/Vs, comparable to what is observed in WTe$_2$ crystals of the same thickness), our results indicate that monolayer jacutingaite should provide an excellent platform to investigate transport in 2D quantum spin Hall systems. △ Less

Submitted 28 May, 2020; v1 submitted 29 October, 2019; originally announced October 2019.

Comments: 11 pages, 4 figures + supplementary (3 pages, 2 figures)

Journal ref: 2D Materials, 7, 025042 (2020)

Magnetic 2D materials and heterostructures

Authors: M. Gibertini, M. Koperski, A. F. Morpurgo, K. S. Novoselov

Abstract: The family of 2D materials grows day by day, drastically expanding the scope of possible phenomena to be explored in two dimensions, as well as the possible van der Waals heterostructures that one can create. Such 2D materials currently cover a vast range of properties. Until recently, this family has been missing one crucial member - 2D magnets. The situation has changed over the last two years w… ▽ More The family of 2D materials grows day by day, drastically expanding the scope of possible phenomena to be explored in two dimensions, as well as the possible van der Waals heterostructures that one can create. Such 2D materials currently cover a vast range of properties. Until recently, this family has been missing one crucial member - 2D magnets. The situation has changed over the last two years with the introduction of a variety of atomically-thin magnetic crystals. Here we will discuss the difference between magnetic states in 2D materials and in bulk crystals and present an overview of the 2D magnets that have been explored recently. We will focus, in particular, on the case of the two most studied systems - semiconducting CrI$_3$ and metallic Fe$_3$GeTe$_2$ - and illustrate the physical phenomena that have been observed. Special attention will be given to the range of novel van der Waals heterostructures that became possible with the appearance of 2D magnets, offering new perspectives in this rapidly expanding field. △ Less

Submitted 8 October, 2019; originally announced October 2019.

Journal ref: Nature Nanotechnology 14, 408-419 (2019)

Bulk and surface electronic structure of the dual-topology semimetal Pt2HgSe3

Authors: I. Cucchi, A. Marrazzo, E. Cappelli, S. Ricco, F. Y. Bruno, S. Lisi, M. Hoesch, T. K. Kim, C. Cacho, C. Besnard, E. Giannini, N. Marzari, M. Gibertini, F. Baumberger, A. Tamai

Abstract: We report high-resolution angle resolved photoemission measurements on single crystals of Pt2HgSe3 grown by high-pressure synthesis. Our data reveal a gapped Dirac nodal line whose (001)-projection separates the surface Brillouin zone in topological and trivial areas. In the non-trivial $k$-space range we find surface states with multiple saddle-points in the dispersion resulting in two van Hove s… ▽ More We report high-resolution angle resolved photoemission measurements on single crystals of Pt2HgSe3 grown by high-pressure synthesis. Our data reveal a gapped Dirac nodal line whose (001)-projection separates the surface Brillouin zone in topological and trivial areas. In the non-trivial $k$-space range we find surface states with multiple saddle-points in the dispersion resulting in two van Hove singularities in the surface density of states. Based on density functional theory calculations, we identify these surface states as signatures of a topological crystalline state which coexists with a weak topological phase. △ Less

Submitted 11 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. Lett. 124, 106402 (2020)

Emergent dual topology in the three-dimensional Kane-Mele Pt$_2$HgSe$_3$

Authors: Antimo Marrazzo, Nicola Marzari, Marco Gibertini

Abstract: Recently, the very first large-gap Kane-Mele quantum spin Hall insulator was predicted to be monolayer jacutingaite (Pt$_2$HgSe$_3$), a naturally-occurring exfoliable mineral discovered in Brazil in 2008. The stacking of quantum spin Hall monolayers into a van-der-Waals layered crystal typically leads to a (0;001) weak topological phase, which does not protect the existence of surface states on th… ▽ More Recently, the very first large-gap Kane-Mele quantum spin Hall insulator was predicted to be monolayer jacutingaite (Pt$_2$HgSe$_3$), a naturally-occurring exfoliable mineral discovered in Brazil in 2008. The stacking of quantum spin Hall monolayers into a van-der-Waals layered crystal typically leads to a (0;001) weak topological phase, which does not protect the existence of surface states on the (001) surface. Unexpectedly, recent angle-resolved photoemission spectroscopy experiments revealed the presence of surface states dispersing over large areas of the 001-surface Brillouin zone of jacutingaite single crystals. The 001-surface states have been shown to be topologically protected by a mirror Chern number $C_M=-2$, associated with a nodal line gapped by spin-orbit interactions. Here, we extend the two-dimensional Kane-Mele model to bulk jacutingaite and unveil the microscopic origin of the gapped nodal line and the emerging crystalline topological order. By using maximally-localized Wannier functions, we identify a large non-trivial second nearest-layer hopping term that breaks the standard paradigm of weak topological insulators. Complemented by this term, the predictions of the Kane-Mele model are in remarkable agreement with recent experiments and first-principles simulations, providing an appealing conceptual framework also relevant for other layered materials made of stacked honeycomb lattices. △ Less

Submitted 11 September, 2019; originally announced September 2019.

Comments: main text: 7 pages, 3 figures; supplementary: 3 pages, 2 figures

Journal ref: Phys. Rev. Research 2, 012063 (2020)

Intrinsic edge excitons in two-dimensional MoS$_2$

Authors: Pino D'Amico, Marco Gibertini, Deborah Prezzi, Daniele Varsano, Andrea Ferretti, Nicola Marzari, Elisa Molinari

Abstract: Using accurate first-principles calculations based on many-body perturbation theory we predict that two-dimensional MoS$_2$ hosts edge excitons with universal character, intrinsic to the existence of edges and lying well below the onset of bulk features. These excitons are largely insensitive to edge terminations or orientation, persisting even in the presence of metallic screening at zigzag edges… ▽ More Using accurate first-principles calculations based on many-body perturbation theory we predict that two-dimensional MoS$_2$ hosts edge excitons with universal character, intrinsic to the existence of edges and lying well below the onset of bulk features. These excitons are largely insensitive to edge terminations or orientation, persisting even in the presence of metallic screening at zigzag edges, with large binding energies of $\sim$0.4 eV. Additional excitons can also emerge in ultranarrow ribbons, or as a function of the chemical nature of the termination. The chemical, structural, and electronic similarities with Se- or W-based transition-metal dichalcogenides suggest that these optical features could be common in this class of materials. △ Less

Submitted 4 September, 2019; originally announced September 2019.

Comments: 7 pages main text, 5 pages supplemental material, 12 figures

Journal ref: Phys. Rev. B 101, 161410 (2020)

Low-temperature monoclinic layer stacking in atomically thin CrI$_3$ crystals

Authors: Nicolas Ubrig, Zhe Wang, Jérémie Teyssier, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Alberto F. Morpurgo, Marco Gibertini

Abstract: Chromium triiodide, CrI$_3$, is emerging as a promising magnetic two-dimensional semiconductor where spins are ferromagnetically aligned within a single layer. Potential applications in spintronics arise from an antiferromagnetic ordering between adjacent layers that gives rise to spin filtering and a large magnetoresistance in tunnelling devices. This key feature appears only in thin multilayers… ▽ More Chromium triiodide, CrI$_3$, is emerging as a promising magnetic two-dimensional semiconductor where spins are ferromagnetically aligned within a single layer. Potential applications in spintronics arise from an antiferromagnetic ordering between adjacent layers that gives rise to spin filtering and a large magnetoresistance in tunnelling devices. This key feature appears only in thin multilayers and it is not inherited from bulk crystals, where instead neighbouring layers share the same ferromagnetic spin orientation. This discrepancy between bulk and thin samples is unexpected, as magnetic ordering between layers arises from exchange interactions that are local in nature and should not depend strongly on thickness. Here we solve this controversy and show through polarization resolved Raman spectroscopy that thin multilayers do not undergo a structural phase transition typical of bulk crystals. As a consequence, a different stacking pattern is present in thin and bulk samples at the temperatures at which magnetism sets in and, according to previous first-principles simulations, this results in a different interlayer magnetic ordering. Our experimental findings provide evidence for the strong interplay between stacking order and magnetism in CrI$_3$, opening interesting perspectives to design the magnetic state of van der Waals multilayers. △ Less

Submitted 26 August, 2019; originally announced August 2019.

Comments: 7 pages, 3 figures

Abundance of $\mathbb{Z}_2$ topological order in exfoliable two-dimensional insulators

Authors: Antimo Marrazzo, Marco Gibertini, Davide Campi, Nicolas Mounet, Nicola Marzari

Abstract: Quantum spin Hall insulators are a class of two-dimensional materials with a finite electronic band gap in the bulk and gapless helical edge states. In the presence of time-reversal symmetry, $\mathbb{Z}_2$ topological order distinguishes the topological phase from the ordinary insulating one. Some of the phenomena that can be hosted in these materials, from one-dimensional low-dissipation electro… ▽ More Quantum spin Hall insulators are a class of two-dimensional materials with a finite electronic band gap in the bulk and gapless helical edge states. In the presence of time-reversal symmetry, $\mathbb{Z}_2$ topological order distinguishes the topological phase from the ordinary insulating one. Some of the phenomena that can be hosted in these materials, from one-dimensional low-dissipation electronic transport to spin filtering, could be very promising for many technological applications in the fields of electronics, spintronics and topological quantum computing. Nevertheless, the rarity of two-dimensional materials that can exhibit non-trivial $\mathbb{Z}_2$ topological order at room temperature hinders development. Here, we screen a comprehensive database we recently created of 1825 monolayers that can be exfoliated from experimentally known compounds, to search for novel quantum spin Hall insulators. Using density-functional and many-body perturbation theory simulations, we identify 13 monolayers that are candidates for quantum spin Hall insulators, including high-performing materials such as AsCuLi$_2$ and jacutingaite (Pt$_2$HgSe$_3$). We also identify monolayer Pd$_2$HgSe$_3$ as a novel Kane-Mele quantum spin Hall insulator, and compare it with jacutingaite. Such a handful of promising materials are mechanically stable and exhibit $\mathbb{Z}_2$ topological order, either unpertubed or driven by a small amount of strain. Such screening highlights a relative abundance of $\mathbb{Z}_2$ topological order of around 1%, and provides an optimal set of candidates for experimental efforts. △ Less

Submitted 22 August, 2019; originally announced August 2019.

Comments: Supporting information as an ancillary file

Wannier90 as a community code: new features and applications

Authors: Giovanni Pizzi, Valerio Vitale, Ryotaro Arita, Stefan Blügel, Frank Freimuth, Guillaume Géranton, Marco Gibertini, Dominik Gresch, Charles Johnson, Takashi Koretsune, Julen Ibañez-Azpiroz, Hyungjun Lee, Jae-Mo Lihm, Daniel Marchand, Antimo Marrazzo, Yuriy Mokrousov, Jamal I. Mustafa, Yoshiro Nohara, Yusuke Nomura, Lorenzo Paulatto, Samuel Poncé, Thomas Ponweiser, Junfeng Qiao, Florian Thöle, Stepan S. Tsirkin , et al. (6 additional authors not shown)

Abstract: Wannier90 is an open-source computer program for calculating maximally-localised Wannier functions (MLWFs) from a set of Bloch states. It is interfaced to many widely used electronic-structure codes thanks to its independence from the basis sets representing these Bloch states. In the past few years the development of Wannier90 has transitioned to a community-driven model; this has resulted in a n… ▽ More Wannier90 is an open-source computer program for calculating maximally-localised Wannier functions (MLWFs) from a set of Bloch states. It is interfaced to many widely used electronic-structure codes thanks to its independence from the basis sets representing these Bloch states. In the past few years the development of Wannier90 has transitioned to a community-driven model; this has resulted in a number of new developments that have been recently released in Wannier90 v3.0. In this article we describe these new functionalities, that include the implementation of new features for wannierisation and disentanglement (symmetry-adapted Wannier functions, selectively-localised Wannier functions, selected columns of the density matrix) and the ability to calculate new properties (shift currents and Berry-curvature dipole, and a new interface to many-body perturbation theory); performance improvements, including parallelisation of the core code; enhancements in functionality (support for spinor-valued Wannier functions, more accurate methods to interpolate quantities in the Brillouin zone); improved usability (improved plotting routines, integration with high-throughput automation frameworks), as well as the implementation of modern software engineering practices (unit testing, continuous integration, and automatic source-code documentation). These new features, capabilities, and code development model aim to further sustain and expand the community uptake and range of applicability, that nowadays spans complex and accurate dielectric, electronic, magnetic, optical, topological and transport properties of materials. △ Less

Submitted 23 July, 2019; originally announced July 2019.

Comments: 26 pages, 8 figures

Journal ref: J. Phys. Cond. Matt. 32, 165902 (2020)

Valley-engineering mobilities in two-dimensional materials

Authors: Thibault Sohier, Marco Gibertini, Davide Campi, Giovanni Pizzi, Nicola Marzari

Abstract: Two-dimensional materials are emerging as a promising platform for ultrathin channels in field-effect transistors. To this aim, novel high-mobility semiconductors need to be found or engineered. While extrinsic mechanisms can in general be minimized by improving fabrication processes, the suppression of intrinsic scattering (driven e.g. by electron-phonon interactions) requires to modify the elect… ▽ More Two-dimensional materials are emerging as a promising platform for ultrathin channels in field-effect transistors. To this aim, novel high-mobility semiconductors need to be found or engineered. While extrinsic mechanisms can in general be minimized by improving fabrication processes, the suppression of intrinsic scattering (driven e.g. by electron-phonon interactions) requires to modify the electronic or vibrational properties of the material. Since intervalley scattering critically affects mobilities, a powerful approach to enhance transport performance relies on engineering the valley structure. We show here the power of this strategy using uniaxial strain to lift degeneracies and suppress scattering into entire valleys, dramatically improving performance. This is shown in detail for arsenene, where a 2% strain stops scattering into 4 of the 6 valleys, and leads to a 600% increase in mobility. The mechanism is general and can be applied to many other materials, including in particular the isostructural antimonene and blue phosphorene. △ Less

Submitted 29 May, 2019; v1 submitted 28 February, 2019; originally announced February 2019.

Comments: 14 pages, 14 figures

Probing magnetism in 2D materials at the nanoscale with single spin microscopy

Authors: Lucas Thiel, Zhe Wang, Märta A. Tschudin, Dominik Rohner, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Marco Gibertini, Enrico Giannini, Alberto F. Morpurgo, Patrick Maletinsky

Abstract: The recent discovery of ferromagnetism in 2D van der Waals (vdw) crystals has generated widespread interest, owing to their potential for fundamental and applied research. Advancing the understanding and applications of vdw magnets requires methods to quantitatively probe their magnetic properties on the nanoscale. Here, we report the study of atomically thin crystals of the vdw magnet CrI$_3$ dow… ▽ More The recent discovery of ferromagnetism in 2D van der Waals (vdw) crystals has generated widespread interest, owing to their potential for fundamental and applied research. Advancing the understanding and applications of vdw magnets requires methods to quantitatively probe their magnetic properties on the nanoscale. Here, we report the study of atomically thin crystals of the vdw magnet CrI$_3$ down to individual monolayers using scanning single-spin magnetometry, and demonstrate quantitative, nanoscale imaging of magnetisation, localised defects and magnetic domains. We determine the magnetisation of CrI$_3$ monolayers to be $\approx16~μ_B/$nm$^2$ and find comparable values in samples with odd numbers of layers, whereas the magnetisation vanishes when the number of layers is even. We also establish that this inscrutable even-odd effect is intimately connected to the material structure, and that structural modifications can induce switching between ferro- and anti-ferromagnetic interlayer ordering. Besides revealing new aspects of magnetism in atomically thin CrI$_3$ crystals, these results demonstrate the power of single-spin scanning magnetometry for the study of magnetism in 2D vdw magnets. △ Less

Submitted 4 February, 2019; originally announced February 2019.

Comments: Questions and comments are welcome. For further information and related job-openings, please visit www.quantum-sensing.ch

Journal ref: Science 364, 973-976 (2019)

Enhanced electron-phonon interaction in multi-valley materials

Authors: Evgeniy Ponomarev, Thibault Sohier, Marco Gibertini, Helmuth Berger, Nicola Marzari, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: Through a combined theoretical and experimental effort, we uncover a yet unidentified mechanism that strengthens considerably electron-phonon coupling in materials where electron accumulation leads to population of multiple valleys. Taking atomically-thin transition-metal dichalcogenides as prototypical examples, we establish that the mechanism results from a phonon-induced out-of-phase energy shi… ▽ More Through a combined theoretical and experimental effort, we uncover a yet unidentified mechanism that strengthens considerably electron-phonon coupling in materials where electron accumulation leads to population of multiple valleys. Taking atomically-thin transition-metal dichalcogenides as prototypical examples, we establish that the mechanism results from a phonon-induced out-of-phase energy shift of the different valleys, which causes inter-valley charge transfer and reduces the effectiveness of electrostatic screening, thus enhancing electron-phonon interactions. The effect is physically robust, it can play a role in many materials and phenomena, as we illustrate by discussing experimental evidence for its relevance in the occurrence of superconductivity. (short abstract due to size limitations - full abstract in the manuscript) △ Less

Submitted 23 January, 2019; originally announced January 2019.

Comments: 16 pages, 8 figures

Journal ref: Phys. Rev. X 9, 031019 (2019)

Microfocus laser-ARPES on encapsulated mono-, bi-, and few-layer 1T'-WTe$_2$

Authors: Irène Cucchi, Ignacio Gutiérrez-Lezama, Edoardo Cappelli, Siobhan McKeown Walker, Flavio Y. Bruno, Giulia Tenasini, Lin Wang, Nicolas Ubrig, Céline Barreteau, Enrico Giannini, Marco Gibertini, Anna Tamai, Alberto F. Morpurgo, Felix Baumberger

Abstract: Two-dimensional crystals of semimetallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal in few layer 1T'-WTe$_2$ and of a quantum spin Hall state in monolayers of the same material. Understanding these phases is particularly challenging because little is known from experiment about the momentum space electr… ▽ More Two-dimensional crystals of semimetallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal in few layer 1T'-WTe$_2$ and of a quantum spin Hall state in monolayers of the same material. Understanding these phases is particularly challenging because little is known from experiment about the momentum space electronic structure of ultrathin crystals. Here, we report direct electronic structure measurements of exfoliated mono-, bi-, and few-layer 1T'-WTe$_2$ by laser-based micro-focus angle resolved photoemission. This is achieved by encapsulating with monolayer graphene a flake of WTe$_2$ comprising regions of different thickness. Our data support the recent identification of a quantum spin Hall state in monolayer 1T'-WTe$_2$ and reveal strong signatures of the broken inversion symmetry in the bilayer. We finally discuss the sensitivity of encapsulated samples to contaminants following exposure to ambient atmosphere. △ Less

Submitted 12 November, 2018; originally announced November 2018.

Comments: 14 pages, 5 figures

Mobility of 2D materials from first principles in an accurate and automated framework

Authors: Thibault Sohier, Davide Campi, Nicola Marzari, Marco Gibertini

Abstract: We present a first-principles approach to compute the transport properties of 2D materials in an accurate and automated framework. We use density-functional perturbation theory in the appropriate bidimensional setup with open-boundary conditions in the third direction. The materials are charged by field effect via planar counter-charges. In this approach, we obtain electron-phonon matrix elements… ▽ More We present a first-principles approach to compute the transport properties of 2D materials in an accurate and automated framework. We use density-functional perturbation theory in the appropriate bidimensional setup with open-boundary conditions in the third direction. The materials are charged by field effect via planar counter-charges. In this approach, we obtain electron-phonon matrix elements in which dimensionality and doping effects are inherently accounted for, without the need for post-processing corrections. This treatment highlights some unexpected consequences, such as an increase of electron-phonon coupling with doping in transition-metal dichalcogenides.We use symmetries extensively and identify pockets of relevant electronic states to minimize the number of electron-phonon interactions to compute; the integrodifferential Boltzmann transport equation is then linearized and solved beyond the relaxation-time approximation. We apply the entire protocol to a set of much studied materials with diverse electronic and vibrational band structures: electron-doped MoS2, WS2, WSe2, phosphorene, arsenene, and hole-doped phosphorene. Among these, hole-doped phosphorene is found to have the highest mobility, with a room temperature value around 600 cm^2/(Vs). Last, we identify the factors that affect most phonon-limited mobilities, such as the number and the anisotropy of electron and hole pockets, to provide a broader understanding of the driving forces behind high mobilities in two-dimensional materials. △ Less

Submitted 22 November, 2018; v1 submitted 31 August, 2018; originally announced August 2018.

Comments: 24 pages, 15 figures

Journal ref: Phys. Rev. Materials 2, 114010 (2018)

Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI$_3$

Authors: Zhe Wang, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Martin Kroner, Marco Gibertini, Takashi Taniguchi, Kenji Watanabe, Ataç Imamoğlu, Enrico Giannini, Alberto F. Morpurgo

Abstract: Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in semiconductors is the interplay between magnetism and transport, which has remained unexplored. Here we report first magneto-transport measurements on exfoliated CrI3 crysta… ▽ More Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in semiconductors is the interplay between magnetism and transport, which has remained unexplored. Here we report first magneto-transport measurements on exfoliated CrI3 crystals. We find that tunneling conduction in the direction perpendicular to the crystalline planes exhibits a magnetoresistance as large as 10 000 %. The evolution of the magnetoresistance with magnetic field and temperature reveals that the phenomenon originates from multiple transitions to different magnetic states, whose possible microscopic nature is discussed on the basis of all existing experimental observations. This observed dependence of the conductance of a tunnel barrier on its magnetic state is a new phenomenon that demonstrates the presence of a strong coupling between transport and magnetism in magnetic van der Waals semiconductors. △ Less

Submitted 28 June, 2018; v1 submitted 24 January, 2018; originally announced January 2018.

Journal ref: Nature Communications (2018)

Prediction of a large-gap and switchable Kane-Mele quantum spin Hall insulator

Authors: Antimo Marrazzo, Marco Gibertini, Davide Campi, Nicolas Mounet, Nicola Marzari

Abstract: Fundamental research and technological applications of topological insulators are hindered by the rarity of materials exhibiting a robust topologically non-trivial phase, especially in two dimensions. Here, by means of extensive first-principles calculations, we propose a novel quantum spin Hall insulator with a sizeable band gap of $\sim$0.5 eV that is a monolayer of Jacutingaite, a naturally occ… ▽ More Fundamental research and technological applications of topological insulators are hindered by the rarity of materials exhibiting a robust topologically non-trivial phase, especially in two dimensions. Here, by means of extensive first-principles calculations, we propose a novel quantum spin Hall insulator with a sizeable band gap of $\sim$0.5 eV that is a monolayer of Jacutingaite, a naturally occurring layered mineral first discovered in 2008 in Brazil and recently synthesised. This system realises the paradigmatic Kane-Mele model for quantum spin Hall insulators in a potentially exfoliable two-dimensional monolayer, with helical edge states that are robust and that can be manipulated exploiting a unique strong interplay between spin-orbit coupling, crystal-symmetry breaking and dielectric response. △ Less

Submitted 19 February, 2018; v1 submitted 11 December, 2017; originally announced December 2017.

Journal ref: Phys. Rev. Lett. 120, 117701 (2018)

Strain-induced polar discontinuities in two-dimensional materials from combined first-principles and Schrödinger-Poisson simulations

Authors: Augustin Bussy, Giovanni Pizzi, Marco Gibertini

Abstract: The local application of mechanical stress in piezoelectric materials gives rise to boundaries across which the electric polarization changes. Polarization charges appear along such polar discontinuities and the ensuing electric fields drive a charge reconstruction with the accumulation of free carriers at the boundaries. This is particularly relevant for two-dimensional materials that can sustain… ▽ More The local application of mechanical stress in piezoelectric materials gives rise to boundaries across which the electric polarization changes. Polarization charges appear along such polar discontinuities and the ensuing electric fields drive a charge reconstruction with the accumulation of free carriers at the boundaries. This is particularly relevant for two-dimensional materials that can sustain very large strains and display record piezoelectric responses. Here we show by first-principles simulations the emergence of one-dimensional wires of free electrons and holes along strain interfaces, taking SnSe as a paradigmatic material. We complement this by developing a Schrödinger-Poisson approach specifically designed for two-dimensional materials that it is able to reproduce the ab-initio results and also to extend them to regimes of parameters and system sizes that would be unaffordable in first principles calculations. This model allows us to assess the degree of tunability for the free charge in the wires coming from strain values and profiles, and to obtain the critical size at which the interfaces start to be metallic. △ Less

Submitted 21 July, 2021; v1 submitted 3 May, 2017; originally announced May 2017.

Comments: 8 pages, 6 figures + supplementary (5 pages, 7 figures)

Journal ref: Phys. Rev. B 96, 165438 (2017)

Breakdown of optical phonons' splitting in two-dimensional materials

Authors: Thibault Sohier, Marco Gibertini, Matteo Calandra, Francesco Mauri, Nicola Marzari

Abstract: We investigate the long-wavelength dispersion of longitudinal and transverse optical phonon modes in polar two-dimensional materials, multilayers, and their heterostructures. Using analytical models and density-functional perturbation theory in a two-dimensional framework, we show that, at variance with the three-dimensional case, these modes are degenerate at the zone center but the macroscopic e… ▽ More We investigate the long-wavelength dispersion of longitudinal and transverse optical phonon modes in polar two-dimensional materials, multilayers, and their heterostructures. Using analytical models and density-functional perturbation theory in a two-dimensional framework, we show that, at variance with the three-dimensional case, these modes are degenerate at the zone center but the macroscopic electric field associated with the longitudinal-optical modes gives rise to a finite slope at the zone center in their corresponding phonon dispersions. This slope increases linearly with the number of layers and it is determined solely by the Born effective charges of the material and the dielectric properties of the surrounding media. Screening from the environment can greatly reduce the slope splitting between the longitudinal and transverse optical modes and can be seen in the experimentally relevant case of boron nitride-graphene heterostructures. As the phonon momentum increases, the intrinsic screening properties of the two-dimensional material dictate the transition to a momentum-independent splitting similar to that of three-dimensional materials. These considerations are essential to understand electrical transport and optical coupling in two-dimensional systems. △ Less

Submitted 10 May, 2017; v1 submitted 21 December, 2016; originally announced December 2016.

Comments: 8 pages, 4 figures

Performance of arsenene and antimonene double-gate MOSFETs from first principles

Authors: Giovanni Pizzi, Marco Gibertini, Elias Dib, Nicola Marzari, Giuseppe Iannaccone, Gianluca Fiori

Abstract: In the race towards high-performance ultra-scaled devices, two-dimensional materials offer an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It is thus urgent to study the most promising candidates in realistic configurations, and here we present detailed multiscale simulations of field-effect transistors based on arsenene and antimonene monolayers as chan… ▽ More In the race towards high-performance ultra-scaled devices, two-dimensional materials offer an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It is thus urgent to study the most promising candidates in realistic configurations, and here we present detailed multiscale simulations of field-effect transistors based on arsenene and antimonene monolayers as channels. The accuracy of first-principles approaches in describing electronic properties is combined with the efficiency of tight-binding Hamiltonians based on maximally-localised Wannier functions to compute the transport properties of the devices. These simulations provide for the first time estimates on the upper limits for the electron and hole mobilities in the Takagi's approximation, including spin-orbit and multi-valley effects, and demonstrate that ultra-scaled devices in the sub-10 nm scale show a performance that is compliant with industry requirements. △ Less

Submitted 13 December, 2016; originally announced December 2016.

Comments: 14 pages, includes also Supplementary Information

Journal ref: Nature Communications 7, 12585 (2016)

Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds

Authors: Nicolas Mounet, Marco Gibertini, Philippe Schwaller, Davide Campi, Andrius Merkys, Antimo Marrazzo, Thibault Sohier, Ivano E. Castelli, Andrea Cepellotti, Giovanni Pizzi, Nicola Marzari

Abstract: We search for novel two-dimensional materials that can be easily exfoliated from their parent compounds. Starting from 108423 unique, experimentally known three-dimensional compounds we identify a subset of 5619 that appear layered according to robust geometric and bonding criteria. High-throughput calculations using van-der-Waals density-functional theory, validated against experimental structura… ▽ More We search for novel two-dimensional materials that can be easily exfoliated from their parent compounds. Starting from 108423 unique, experimentally known three-dimensional compounds we identify a subset of 5619 that appear layered according to robust geometric and bonding criteria. High-throughput calculations using van-der-Waals density-functional theory, validated against experimental structural data and calculated random-phase-approximation binding energies, allow to identify 1825 compounds that are either easily or potentially exfoliable, including all that are commonly exfoliated experimentally. In particular, the subset of 1036 easily exfoliable cases---layered materials held together mostly by dispersion interactions and with binding energies up to $30-35$ meV$\cdot\textÅ^{-2}$---provides a wealth of novel structural prototypes and simple ternary compounds, and a large portfolio to search materials for optimal properties. For the 258 compounds with up to 6 atoms per primitive cell we comprehensively explore vibrational, electronic, magnetic, and topological properties, identifying in particular 56 ferromagnetic and antiferromagnetic systems, including half-metals and half-semiconductors. △ Less

Submitted 22 July, 2020; v1 submitted 16 November, 2016; originally announced November 2016.

Comments: 15 pages, 5 figures, supplementary material available at https://www.nature.com/articles/s41565-017-0035-5#Sec15. Data available on the Materials Cloud https://www.materialscloud.org/discover/2dstructures/dashboard/ptable

Journal ref: Nat. Nanotech. 13, 246-252 (2018)

Emergence of one-dimensional wires of free carriers in transition-metal-dichalcogenide nanostructures

Authors: Marco Gibertini, Nicola Marzari

Abstract: We highlight the emergence of metallic states in two-dimensional transition-metal-dichalcogenide nanostructures -nanoribbons, islands, and inversion domain boundaries- as a widespread and universal phenomenon driven by the polar discontinuities occurring at their edges or boundaries. We show that such metallic states form one-dimensional wires of electrons or holes, with a free charge density that… ▽ More We highlight the emergence of metallic states in two-dimensional transition-metal-dichalcogenide nanostructures -nanoribbons, islands, and inversion domain boundaries- as a widespread and universal phenomenon driven by the polar discontinuities occurring at their edges or boundaries. We show that such metallic states form one-dimensional wires of electrons or holes, with a free charge density that increases with the system size, up to complete screening of the polarization charge, and can also be controlled by the specific edge or boundary configurations, e.g. through chemisorption of hydrogen or sulfur atoms at the edges. For triangular islands, local polar discontinuities occur even in the absence of a total dipole moment for the island and lead to an accumulation of free carriers close to the edges, providing a consistent explanation of previous experimental observations. To further stress the universal character of these mechanisms, we show that polar discontinuities give rise to metallic states also at inversion domain boundaries. These findings underscore the potential of engineering transition-metal-dichalcogenide nanostructures for manifold applications in nano- and opto-electronics, spintronics, catalysis, and solar-energy harvesting. △ Less

Submitted 25 September, 2015; originally announced September 2015.

Comments: 11 pages, 10 figures

Journal ref: Nano Lett. 15, 6229 (2015)

Band-like Electron Transport with Record-High Mobility in the TCNQ family

Authors: Yulia Krupskaya, Marco Gibertini, Nicola Marzari, Alberto F. Morpurgo

Abstract: In highest quality organic single-crystal field-effect transistors, electron transport occurs in the band-like regime, with the carrier mobility increasing upon lowering temperature. Neither the microscopic nature of this regime, nor why it occurs only in a small number of materials is currently understood. Here, comparative studies of closely related materials, exhibiting high-quality reproducibl… ▽ More In highest quality organic single-crystal field-effect transistors, electron transport occurs in the band-like regime, with the carrier mobility increasing upon lowering temperature. Neither the microscopic nature of this regime, nor why it occurs only in a small number of materials is currently understood. Here, comparative studies of closely related materials, exhibiting high-quality reproducible transport properties are needed. We performed a study of electron transport in single-crystals of different TCNQ (tetracyanoquinodimethane) molecules, combined with band structure calculations. We show that F2-TCNQ devices exhibit very high electron mobility and an unprecedented increase in mobility upon cooling, whereas in TCNQ and F4-TCNQ the mobility is substantially lower and decreases upon cooling. We analyze the crystal and electronic structures of these materials and find that F2-TCNQ crystals are indeed ideal to achieve outstanding transport properties. Our analysis also shows that to understand the difference between the three materials, studying their band structure is not sufficient, and that the electron-phonon coupling needs to be investigated as well. Besides the outstanding transport properties of F2-TCNQ, a key result of our work is the identification of the Fx-TCNQ family as a paradigm to investigate the most fundamental aspects of electronic transport in organic crystals. △ Less

Submitted 29 February, 2016; v1 submitted 13 July, 2015; originally announced July 2015.

Journal ref: Adv. Mater. 2015, 27, 2453-2458

Engineering polar discontinuities in honeycomb lattices

Authors: Marco Gibertini, Giovanni Pizzi, Nicola Marzari

Abstract: Unprecedented and fascinating phenomena have been recently observed at oxide interfaces between centrosymmetric cubic materials, such as LaAlO$_3$ and SrTiO$_3$, where a polar discontinuity across the boundary gives rise to polarization charges and electric fields that drive a metal-insulator transition, with the appearance of free carriers at the interface. Two-dimensional analogues of these syst… ▽ More Unprecedented and fascinating phenomena have been recently observed at oxide interfaces between centrosymmetric cubic materials, such as LaAlO$_3$ and SrTiO$_3$, where a polar discontinuity across the boundary gives rise to polarization charges and electric fields that drive a metal-insulator transition, with the appearance of free carriers at the interface. Two-dimensional analogues of these systems are possible, and honeycomb lattices could offer a fertile playground, thanks to their versatility and the extensive on-going experimental efforts in graphene and related materials. Here we suggest different realistic pathways to engineer polar discontinuities across interfaces between honeycomb lattices, and support these suggestions with extensive first-principles calculations. Two broad approaches are discussed, that are based on (i) nanoribbons, where a polar discontinuity against the vacuum emerges, and (ii) selective functionalizations, where covalent ligands are used to engineer polar discontinuities by selective or total functionalization of the parent system. All the cases considered have the potential to deliver innovative applications in ultra-thin and flexible solar-energy devices and in micro- and nano-electronics. △ Less

Submitted 8 December, 2014; originally announced December 2014.

Comments: 12+epsilon pages, 6 figures

Journal ref: Nature Communications 5, 5157 (2014)