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Ab initio investigation of the effects of B-doping on the adsorption of H2O, H2 and O2 molecules at diamond surfaces
Authors:
Stefanos Giaremis,
Maria Clelia Righi
Abstract:
Boron doped diamond is extensively studied for its use in tribological and electrochemical applications due to its remarkable physical and chemical properties. However, ambient conditions play a major role to its macroscopically observed behavior. In this study, the fundamental interactions between the low Miller index (001), (110) and (111) B-doped diamond surfaces with H2O, H2 and O2 molecules,…
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Boron doped diamond is extensively studied for its use in tribological and electrochemical applications due to its remarkable physical and chemical properties. However, ambient conditions play a major role to its macroscopically observed behavior. In this study, the fundamental interactions between the low Miller index (001), (110) and (111) B-doped diamond surfaces with H2O, H2 and O2 molecules, which are commonly present in ambient air and commonly involved in electrochemical reactions, are investi-gated by means of ab initio simulations. The results are presented in close comparison with previous studies on undoped diamond surfaces to reveal the impact of B on the adsorption properties. It is demonstrated that the B dopant is preferably incorporated on the topmost carbon layer and enhances the physisorption of H2O by forming a dative bond with O, while, in some cases, it can weaken the ad-sorption of O2, compared to the undoped diamond. Moreover, a noticeable displacement of the surface atoms attached to the fragment of the dissociated H2O and O2 molecules was observed, which can be associated to the first stage of wear at the atomistic level. These qualitative and quantitative results aim to provide useful insight towards the development of improved protective coatings and electrochemical devices.
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Submitted 27 April, 2023;
originally announced April 2023.
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Density functional description of long-range electron Coulomb interactions in bulk SnS
Authors:
Stefanos Giaremis,
Joseph Kioseoglou,
Eleni Chatzikyriakou
Abstract:
A high-throughput benchmarking technique for testing the performance of different exchange-correlation functionals and pseudopotentials is proposed and applied to bulk SnS. It is shown that, contrary to the popular view that the local density approximation can best describe layered materials, a semilocal pseudopotential with a functional having a gradient dependence better described lattice vector…
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A high-throughput benchmarking technique for testing the performance of different exchange-correlation functionals and pseudopotentials is proposed and applied to bulk SnS. It is shown that, contrary to the popular view that the local density approximation can best describe layered materials, a semilocal pseudopotential with a functional having a gradient dependence better described lattice vectors and `tetragonicity' of the lattice. We classify the pseudopotentials based on this value and show that the participation ratio of maximally localized Wannier functions follows the theory which states that more distorted structures have higher anti-bonding hybridization as stabilizing factor. In order to classify pseudopotentials, the local and nonlocal potential contributions to the dynamical Born effective charges are taken for each pseudopotential. Finally, a strategy is proposed for learning exchange-correlation functionals based on the distinction between short and long range parts of the Kohn-Sham potential.
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Submitted 19 May, 2023; v1 submitted 20 February, 2023;
originally announced February 2023.
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Decorated dislocations against phonon propagation for thermal management
Authors:
Stefanos Giaremis,
Joseph Kioseoglou,
Mykola Isaiev,
Imad Belabbas,
Philomela Komninou,
Konstantinos Termentzidis
Abstract:
The impact of decorated dislocations on the effective thermal conductivity of GaN is investigated by means of equilibrium molecular dynamics simulations via the Green-Kubo approach. The formation of "nanowires" by a few atoms of In in the core of dislocations in wurtzite GaN is found to affect the thermal properties of the material, as it leads to a significant decrease of the thermal conductivity…
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The impact of decorated dislocations on the effective thermal conductivity of GaN is investigated by means of equilibrium molecular dynamics simulations via the Green-Kubo approach. The formation of "nanowires" by a few atoms of In in the core of dislocations in wurtzite GaN is found to affect the thermal properties of the material, as it leads to a significant decrease of the thermal conductivity, along with an enhancement of its anisotropic character. The thermal conductivity of In-decorated dislocations is compared to the ones of pristine GaN, InN, and random and ordered InxGa1-xN alloy, to examine the impact of doping. Results are explained by the stress maps, the bonding properties and the phonon density of states of the aforementioned systems. The decorated dislocations engineering is a novel way to tune, among other transport properties, the effective thermal conductivity of materials at the nanoscale, which can lead to the manufacturing of interesting candidates for thermoelectric or anisotropic thermal dissipation devices.
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Submitted 17 December, 2019;
originally announced December 2019.
