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Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps
Authors:
Patrick Fiorenza,
Marco Zignale,
Marco Camalleri,
Laura Scalia,
Edoardo Zanetti,
Mario Saggio,
Filippo Giannazzo,
Fabrizio Roccaforte
Abstract:
In this work, the effects of the duration of the post deposition annealing (PDA) in nitric oxide (NO) on the properties of SiO2/4H-SiC interfaces in n-channel lateral MOSFETs are investigated, with a special focus on the modifications of the energy profile of near-interface-oxide traps (NIOTs). For this purpose, the electrical characteristics of lateral MOSFETs were studied in strong inversion con…
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In this work, the effects of the duration of the post deposition annealing (PDA) in nitric oxide (NO) on the properties of SiO2/4H-SiC interfaces in n-channel lateral MOSFETs are investigated, with a special focus on the modifications of the energy profile of near-interface-oxide traps (NIOTs). For this purpose, the electrical characteristics of lateral MOSFETs were studied in strong inversion conditions, monitoring the threshold voltage variations due to charge trapping effects. To determine the energetic position of the NIOTs with respect of the SiO2 conduction band edge, the Fermi level position in the insulating layer was evaluated by TCAD simulations of the band diagrams. PDAs of the gate oxide of different duration resulted into similar shape of the energetic profile of the traps inside the insulator with respect of the SiO2 conduction band edge, but with different magnitude. Finally, the effective decrease of the insulator traps is demonstrated despite a saturation of the interface state density under prolonged PDAs and in particular the charge trapped at the NIOTs is reduced from 1-2 x 1011 cm-2 down to 3 x 1011 cm-2 varying the PDA duration from 10 up to 120 min in NO at 1175 degree C.
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Submitted 28 October, 2024;
originally announced October 2024.
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Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
Authors:
Patrick Fiorenza,
Marco Zignale,
Edoardo. Zanetti,
Mario S. Alessandrino,
Beatrice Carbone,
Alfio Guarnera,
Mario Saggio,
Filippo Giannazzo,
Fabrizio Roccaforte
Abstract:
This paper reports the results presented in an invited poster during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023 held in Sorrento, Italy. The suitability of scanning probe methods based on atomic force microscopy (AFM) measurements is explored to investigate with high spatial resolution the elementary cell of 4H-SiC power MOSFETs. The two-dimensional (2D) cr…
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This paper reports the results presented in an invited poster during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023 held in Sorrento, Italy. The suitability of scanning probe methods based on atomic force microscopy (AFM) measurements is explored to investigate with high spatial resolution the elementary cell of 4H-SiC power MOSFETs. The two-dimensional (2D) cross-sectional maps demonstrated a high spatial resolution of about 5 nm using the SSRM capabilities. Furthermore, the SCM capabilities enabled visualizing the fluctuations of charge carrier concentration across the different parts of the MOSFETs elementary cell.
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Submitted 22 July, 2024; v1 submitted 18 July, 2024;
originally announced July 2024.
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Direct atomic layer deposition of ultra-thin $Al_{2}O_{3}$ and $HfO_{2}$ films on gold-supported monolayer $MoS_{2}$
Authors:
E. Schilirò,
S. E. Panasci,
A. M. Mio,
G. Nicotra,
S. Agnello,
B. Pecz,
G. Z. Radnoczi,
I. Deretzis,
A. La Magna,
F. Roccaforte,
R. Lo Nigro,
F. Giannazzo
Abstract:
In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight on the nucleation mechanisms in the early stages of the ALD process. A preliminary multiscale characterization of large area 1L-$MoS_{2}$ exfoliated on sputter-grown Au/Ni films revealed an almost conformal…
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In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight on the nucleation mechanisms in the early stages of the ALD process. A preliminary multiscale characterization of large area 1L-$MoS_{2}$ exfoliated on sputter-grown Au/Ni films revealed an almost conformal $MoS_{2}$ membrane with the Au topography and the occurrence of strain variations at the nanoscale. Ab-initio DFT calculations of $MoS_{2}$/Au(111) interface showed a significant influence of the Au substrate on the $MoS_{2}$ energy band structure, whereas small differences were accounted for the adsorption of the $H_{2}O$, TMA and TDMAHf precursors. This suggests a crucial role of nanoscale morphological effects, such as local curvature and strain of the $MoS_{2}$ membrane, in the enhanced physisorption of the precursors. Therefore, the nucleation and growth of $Al_{2}O_{3}$ and $HfO_{2}$ films onto 1L-$MoS_{2}$/Au was investigated, by monitoring the surface coverage as a function of the number (N) of ALD cycles, with N from 10 to 120. At low N values, a slower growth rate of the initially formed nuclei was observed for $HfO_{2}$, probably due to the bulky nature of the TDMAHf precursor as compared to TMA. On the other hand, the formation of continuous films was obtained in both cases for N>80 ALD cycles, corresponding to 3.6 nm $Al_{2}O_{3}$ and 3.1 nm $HfO_{2}$. Current mapping by C-AFM showed, for the same applied bias, a uniform insulating behavior of $Al_{2}O_{3}$ and the occurrence of few localized breakdown spots in the case of $HfO_{2}$, associated to less compact films regions. Finally, an increase of the 1L-$MoS_{2}$ tensile strain was observed by Raman mapping after encapsulation with both high-k films, accompanied by a reduction in the PL intensity.
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Submitted 13 May, 2023;
originally announced May 2023.
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Atomic resolution interface structure and vertical current injection in highly uniform $MoS_{2}$ heterojunctions with bulk GaN
Authors:
F. Giannazzo,
S. E. Panasci,
E. Schilirò,
G. Greco,
F. Roccaforte,
G. Sfuncia,
G. Nicotra,
M. Cannas,
S. Agnello,
E. Frayssinet,
Y. Cordier,
A. Michon,
A. Koos,
B. Pécz
Abstract:
The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sapphire substrates, whereas the growth of $MoS_{2}$ on low-dislocation-density bulk GaN can be strategic for the realization of truly vertical devices.…
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The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sapphire substrates, whereas the growth of $MoS_{2}$ on low-dislocation-density bulk GaN can be strategic for the realization of truly vertical devices. In this paper, we report the growth of ultrathin $MoS_{2}$ films, mostly composed by single-layers ($1L$), onto homoepitaxial $n-GaN$ on $n^{+}$ bulk substrates by sulfurization of a pre-deposited $MoO_{x}$ film. Highly uniform and conformal coverage of the $GaN$ surface was demonstrated by atomic force microscopy, while very low tensile strain (0.05%) and a significant $p^{+}$-type doping ($4.5 \times 10^{12} cm^{-2}$) of $1L-MoS_{2}$ was evaluated by Raman mapping. Atomic resolution structural and compositional analyses by aberration-corrected electron microscopy revealed a nearly-ideal van der Waals interface between $MoS_{2}$ and the $Ga$-terminated $GaN$ crystal, where only the topmost $Ga$ atoms are affected by oxidation. Furthermore, the relevant lattice parameters of the $MoS_{2}/GaN$ heterojunction, such as the van der Waals gap, were measured with high precision. Finally, the vertical current injection across this 2D/3D heterojunction has been investigated by nanoscale current-voltage analyses performed by conductive atomic force microscopy, showing a rectifying behavior with an average turn-on voltage $V_{on}=1.7 V$ under forward bias, consistent with the expected band alignment at the interface between $p^{+}$ doped $1L-MoS_{2}$ and $n-GaN$.
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Submitted 19 May, 2023; v1 submitted 24 April, 2023;
originally announced April 2023.
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Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Authors:
Giuseppe Greco,
Patrick Fiorenza,
Emanuela Schilirò,
Corrado Bongiorno,
Salvatore Di Franco,
Pierre-Marie Coulon,
Eric Frayssinet,
Florian Bartoli,
Filippo Giannazzo,
Daniel Alquier,
Yvon Cordier,
Fabrizio Roccaforte
Abstract:
In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy (C-AFM) of the bare material allowed visualizing structural defects in the crystal, as well as local inhomogeneities of the current conduction. The forward curr…
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In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy (C-AFM) of the bare material allowed visualizing structural defects in the crystal, as well as local inhomogeneities of the current conduction. The forward current-voltage (I-V) characteristics of Ni/GaN vertical Schottky diodes fabricated on the epilayer gave average values of the Schottky barrier height of 0.79 eV and ideality factor of 1.14. A statistical analysis over a set of diodes, combined with temperature dependence measurements, confirmed the formation of an inhomogeneous Schottky barrier in this material. From a plot of FB versus n, an ideal homogeneous barrier close to 0.9 eV was estimated, similar to that extrapolated by capacitance-voltage (C-V) analysis. Local I-V curves, acquired by means of C-AFM, displayed the inhomogeneous distribution of the onset of current conduction, which in turn resembles the one observed in the macroscopic Schottky diodes. Finally, the reverse characteristic of the diodes fabricated in the defects-free region have been acquired at different temperature and its behaviour has been described by the thermionic field emission (TFE) model.
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Submitted 23 April, 2023;
originally announced April 2023.
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Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs
Authors:
Giuseppe Greco,
Patrick Fiorenza,
Filippo Giannazzo,
Corrado Bongiorno,
Maurizio Moschetti,
Cettina Bottari,
Mario Santi Alessandrino,
Ferdinando Iucolano,
Fabrizio Roccaforte
Abstract:
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations under stress has been ascribed to charge trapping occurring at the different interfaces in the metal/p-GaN/AlGaN/GaN system. In particular, depending on the str…
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In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations under stress has been ascribed to charge trapping occurring at the different interfaces in the metal/p-GaN/AlGaN/GaN system. In particular, depending on the stress bias level, electrons (VG < 6 V) or holes (VG > 6 V) are trapped, causing a positive or negative threshold voltage shift {DVTH, respectively. By monitoring the gate current variations at different temperatures, the activation energies associated to the electrons and holes trapping could be determined and correlated with the presence of nitrogen (electron traps) or gallium (hole traps) vacancies. Moreover, the electrical measurements suggested the generation of a new electron-trap upon long-time bias stress, associated to the creation of crystallographic dislocation-like defects extending across the different interfaces (p-GaN/AlGaN/GaN) of the gate stack.
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Submitted 8 February, 2023; v1 submitted 13 December, 2022;
originally announced December 2022.
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2D graphitic-like gallium nitride and structural selectivity in confinement at graphene/SiC interface
Authors:
Gianfranco Sfuncia,
Giuseppe Nicotra,
Filippo Giannazzo,
Béla Pécz,
Gueorgui Kostov Gueorguiev,
Anelia Kakanakova-Georgieva
Abstract:
Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a buckled geometry obtained in confinement at graphene/SiC interface by metalorganic chemical vapor deposition (MOCVD). Conductive atomic force microscopy (C-AFM) has been employed to probe vertical current injection thro…
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Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a buckled geometry obtained in confinement at graphene/SiC interface by metalorganic chemical vapor deposition (MOCVD). Conductive atomic force microscopy (C-AFM) has been employed to probe vertical current injection through the graphene/SiC interface and to establish the uniformity of the intercalated areas. Scanning transmission electron microscopy (S/TEM) has been employed for atomic resolution imaging and spectroscopy. Discontinuity in the anticipated stacking sequence of graphitic-like GaN monolayers has been exposed and reasoned as a case of simultaneous formation of Ga-N and Ga-O bonds. The formation of Ga-O bonds acquires importance in instigating chemical-species-specific structural selectivity in confinement at atom-size scale.
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Submitted 21 June, 2022;
originally announced June 2022.
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Substrate impact on the thickness dependence of vibrational and optical properties of large area $MoS_2$ produced by gold-assisted exfoliation
Authors:
S. E. Panasci,
E. Schilirò,
F. Migliore,
M. Cannas,
F. M. Gelardi,
F. Roccaforte,
F. Giannazzo,
S. Agnello
Abstract:
The gold-assisted exfoliation is a very effective method to produce large-area ($cm^2$-scale) membranes of molybdenum disulfide ($MoS_2$) for electronics. However, the strong $MoS_2/Au$ interaction, beneficial for the exfoliation process, has a strong impact on the vibrational and light emission properties of $MoS_2$. Here, we report an atomic force microscopy (AFM), micro-Raman ($μ-R$) and micro-…
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The gold-assisted exfoliation is a very effective method to produce large-area ($cm^2$-scale) membranes of molybdenum disulfide ($MoS_2$) for electronics. However, the strong $MoS_2/Au$ interaction, beneficial for the exfoliation process, has a strong impact on the vibrational and light emission properties of $MoS_2$. Here, we report an atomic force microscopy (AFM), micro-Raman ($μ-R$) and micro-Photoluminescence ($μ-PL$) investigation of $MoS_2$ with variable thickness exfoliated on Au and subsequently transferred on an $Al_2O_3/Si$ substrate. The $E_{2g}$ - $A_{1g}$ vibrational modes separation $Δμ$ (typically used to estimate $MoS_2$ thickness) exhibits an anomalous large value ($Δμ=21.2 cm^{-1}$) for monolayer (1L) $MoS_2$ on Au as compared to the typical one ($Δμ=18.5 cm^{-1}$) measured on 1L $MoS_2$ on $Al_2O_3/Si$. Such substrate-related differences, explained in terms of tensile strain and p-type doping arising from the $MoS_2/Au$ interaction, were found to gradually decrease while increasing the number of $MoS_2$ layers. Furthermore, $μ-PL$ spectra for 1L $MoS_2$ on Au exhibit a strong quenching and an overall red-shift of the main emission peak at 1.79 eV, compared to the 1.84 eV peak for 1L $MoS_2$ on $Al_2O_3$. After PL spectra deconvolution, such red shift was explained in terms of a higher trion/exciton intensity ratio, probably due to the higher polarizability of the metal substrate, as well as to the smaller equilibrium distance at $MoS_2/Au$ interface.
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Submitted 31 August, 2021; v1 submitted 21 August, 2021;
originally announced August 2021.
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Direct atomic layer deposition of ultrathin aluminium oxide on monolayer $MoS_2$ exfoliated on gold: the role of the substrate
Authors:
Emanuela Schilirò,
Raffaella Lo Nigro,
Salvatore E. Panasci,
Simonpietro Agnello,
Marco Cannas,
Franco M. Gelardi,
Fabrizio Roccaforte,
Filippo Giannazzo
Abstract:
In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 °C of highly homogeneous and ultra-thin ($\approx$ 3.6 nm) $Al_2O_3$ films with excellent insulating properties directly onto a monolayer (1L) $MoS_2$ membrane exfoliated on gold. Differently than in the case of 1L $MoS_2$ supported by a common insulating substrate ($Al_2O_3/Si$), a better nucleation process of t…
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In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 °C of highly homogeneous and ultra-thin ($\approx$ 3.6 nm) $Al_2O_3$ films with excellent insulating properties directly onto a monolayer (1L) $MoS_2$ membrane exfoliated on gold. Differently than in the case of 1L $MoS_2$ supported by a common insulating substrate ($Al_2O_3/Si$), a better nucleation process of the high-k film was observed on the 1L $MoS_2/Au$ system since the ALD early stages. Atomic force microscopy analyses showed a $\approx 50\%$ $Al_2O_3$ surface coverage just after 10 ALD cycles, its increasing up to $>90\%$ (after 40 cycles), and an uniform $\approx$ 3.6 nm film, after 80 cycles. The coverage percentage was found to be significantly reduced in the case of 2L $MoS_2/Au$, indicating a crucial role of the interfacial interaction between the aluminum precursor and $MoS_2/Au$ surface. Finally, Raman spectroscopy and PL analyses provided an insight about the role played by the tensile strain and p-type doping of 1L $MoS_2$ induced by the gold substrate on the enhanced high-k nucleation of $Al_2O_3$ thin films. The presently shown high quality ALD growth of high-k $Al_2O_3$ dielectrics on large area 1L $MoS_2$ induced by the Au underlayer can be considered of wide interest for potential device applications based on this material system.
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Submitted 21 August, 2021;
originally announced August 2021.
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Strain, doping and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate
Authors:
S. E. Panasci,
E. Schilirò,
G. Greco,
M. Cannas,
F. M. Gelardi,
S. Agnello,
F. Roccaforte,
F. Giannazzo
Abstract:
Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vdW) crystals. The strong interaction between $Au$ and chalcogen atoms is the key to achieve this nearly perfect 1L exfoliation yield. On the other hand…
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Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vdW) crystals. The strong interaction between $Au$ and chalcogen atoms is the key to achieve this nearly perfect 1L exfoliation yield. On the other hand, it may affect significantly the doping and strain of 1L TMDs in contact with Au. In this paper, we systematically investigated the morphology, strain, doping, and electrical properties of large area 1L $MoS_{2}$ exfoliated on ultra-flat $Au$ films ($0.16-0.21 nm$ roughness) and finally transferred to an insulating $Al_{2}O_{3}$ substrate. Raman mapping and correlative analysis of the $E'$ and $A1'$ peaks positions revealed a moderate tensile strain ($0.2\%$) and p-type doping ($n=-0.25 \times 10^{13} cm^{-2}$) of 1L $MoS_{2}$ in contact with $Au$. Nanoscale resolution current mapping and current-voltage (I-V) measurements by conductive atomic force microscopy (C-AFM) showed direct tunnelling across the 1L $MoS_{2}$ on $Au$, with a broad distribution of tunnelling barrier values (from 0.7 to 1.7 eV) consistent with the p-type doping of $MoS_{2}$. After the final transfer of $1L-MoS_{2}$ on $Al_{2}O_{3}/Si$, the strain was converted to compressive ($-0.25\%$). Furthermore, an n-type doping ($n=0.5 \times 10^{13} cm^{-2}$) was deduced by Raman mapping and confirmed by electrical measurements of an $Al_{2}O_{3}/Si$ back-gated 1L $MoS_{2}$ transistor. These results provide a deeper understanding of the $Au$-assisted exfoliation mechanisms and can contribute to its widespread applications for the realization of novel devices and artificial vdW heterostructures
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Submitted 27 April, 2021;
originally announced April 2021.
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Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
Authors:
Marilena Vivona,
Giuseppe Greco,
Monia Spera,
Patrick Fiorenza,
Filippo Giannazzo,
Antonino La Magna,
Fabrizio Roccaforte
Abstract:
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. The forward current-voltage characterization of Schottky diodes showed that the predominant current transport is a thermionic-field emission mechanism. On th…
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The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. The forward current-voltage characterization of Schottky diodes showed that the predominant current transport is a thermionic-field emission mechanism. On the other hand, the reverse bias characteristics could not be described by a unique mechanism. In fact, under moderate reverse bias, implantation-induced damage is responsible for the temperature increase of the leakage current, while a pure field emission mechanism is approached with bias increasing. The potential application of metal/4H-SiC contacts on heavily doped layers in real devices are discussed.
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Submitted 15 April, 2021; v1 submitted 17 February, 2021;
originally announced February 2021.
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Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations
Authors:
Patrick Fiorenza,
Corrado Bongiorno,
Filippo Giannazzo,
Santi Alessandrino,
Angelo Messina,
Mario Saggio,
Fabrizio Roccaforte
Abstract:
In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC MOSFETs. In particular, PDA in NO gave a higher channel mobility (55 cm2V-1s-1) than PDA in N2O (20 cm2V-1s-1), and the subthreshold behavior of the devices confirm…
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In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC MOSFETs. In particular, PDA in NO gave a higher channel mobility (55 cm2V-1s-1) than PDA in N2O (20 cm2V-1s-1), and the subthreshold behavior of the devices confirmed a lower total amount of interface states for the NO case. This latter could be also deduced from the behavior of the capacitance-voltage characteristics of 4H-SiC MOSFETs measured in gate controlled diode configuration. On the other hand, cyclic gate bias stress measurements allowed to separate the contributions of interface states (Nit) both on the upper and bottom parts of the 4H-SiC band gap and near interface oxide traps (NIOTs) in the two oxides. In particular, it was found that NO annealing reduced the total density of charges trapped at the interface states down to 3 x 1011 cm- 2 and those trapped inside the oxide down to 1 x 1011 cm-2. Electron energy loss spectroscopy demonstrated that the reduction of these traps in the NO annealed sample is due to the lower amounts of sub-stoichiometric silicon oxide (~ 1nm) and carbon-related defects (< 1nm) at the interface, respectively. This correlation represents a further step in the comprehension of the physics of the SiO2/4H-SiC interface explaining the mobility and threshold voltage behavior of 4H-SiC MOSFETs.
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Submitted 29 July, 2021; v1 submitted 16 December, 2020;
originally announced December 2020.
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Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
Authors:
F. Giannazzo,
R. Dagher,
E. Schilirò,
S. E. Panasci,
G. Greco,
G. Nicotra,
F. Roccaforte,
S. Agnello,
J. Brault,
Y. Cordier,
A. Michon
Abstract:
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates by propane (C3H8) chemical vapor deposition (CVD) at temperature of 1350°C. After optimization of the C3H8 flow rate, a uniform and conformal Gr cover…
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The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates by propane (C3H8) chemical vapor deposition (CVD) at temperature of 1350°C. After optimization of the C3H8 flow rate, a uniform and conformal Gr coverage was achieved, which proved beneficial to prevent degradation of AlGaN morphology. X-ray photoemission spectroscopy (XPS) revealed Ga loss and partial oxidation of Al in the near-surface AlGaN region. Such chemical modification of a 2 nm thick AlGaN surface region was confirmed by cross-sectional scanning transmission electron microscopy (STEM) combined with electron energy loss spectroscopy (EELS), which also showed the presence of a bilayer of Gr with partial sp2/sp3 hybridization. Raman spectra indicated that the deposited Gr is nanocrystalline (with domain size 7 nm) and compressively strained. A Gr sheet resistance of 15.8 kOhm/sq was evaluated by four-point-probe measurements, consistently with the nanocrystalline nature of these films. Furthermore, nanoscale resolution current mapping by conductive atomic force microscopy (C-AFM) indicated local variations of the Gr carrier density at a mesoscopic scale, which can be ascribed to changes in the charge transfer from the substrate due to local oxidation of AlGaN or to the presence of Gr wrinkles.
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Submitted 18 September, 2020;
originally announced September 2020.
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Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress
Authors:
P. Fiorenza,
M. Alessandrino,
B. Carbone,
C. Di Martino,
A. Russo,
M. Saggio,
C. Venuto,
E. Zanetti,
C. Bongiorno,
F. Giannazzo,
F. Roccaforte
Abstract:
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence between the location of the breakdown event and a threading dislocation propagating through the epitaxial layer was found. Scanning probe microscopy (S…
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In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence between the location of the breakdown event and a threading dislocation propagating through the epitaxial layer was found. Scanning probe microscopy (SPM) revealed the conductive nature of the threading dislocation and a local modification of the minority carriers concentration. Basing on these results, the role of the threading dislocation on the failure of 4H-SiC MOSFETs could be clarified.
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Submitted 10 September, 2020;
originally announced September 2020.
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Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress
Authors:
P. Fiorenza,
M. Alessandrino,
B. Carbone,
C. Di Martino,
A. Russo,
M. Saggio,
C. Venuto,
E. Zanetti,
F. Giannazzo,
F. Roccaforte
Abstract:
The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias (HTRB) stress. A local inspection of the failed devices demonstrated the presence of a threading dislocation (TD) at the breakdown location. The nanoscale origin of the dielectric breakdown was highlighted with advanced high-spatial-resolution scanning probe microscopy (…
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The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias (HTRB) stress. A local inspection of the failed devices demonstrated the presence of a threading dislocation (TD) at the breakdown location. The nanoscale origin of the dielectric breakdown was highlighted with advanced high-spatial-resolution scanning probe microscopy (SPM) techniques. In particular, SPM revealed the conductive nature of the TD and a local increase of the minority carrier concentration close to the defect. Numerical simulations estimated a hole concentration 13 orders of magnitude larger than in the ideal 4H-SiC crystal. The hole injection in specific regions of the device explained the failure of the gate oxide under stress. In this way, the key role of the TD in the dielectric breakdown of 4H-SiC MOSFET was unambiguously demonstrated.
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Submitted 10 September, 2020;
originally announced September 2020.
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Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
Authors:
E. Schilirò,
R. Lo Nigro,
S. E. Panasci,
F. M. Gelardi,
S. Agnello,
R. Yakimova,
F. Roccaforte,
F. Giannazzo
Abstract:
In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on silicon carbide (4H-SiC) has been investigated by atomic force microscopy (AFM) and Raman spectroscopy. Contrary to what is typically observed for other types of graphene, a large and uniform density of nucleation sites…
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In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on silicon carbide (4H-SiC) has been investigated by atomic force microscopy (AFM) and Raman spectroscopy. Contrary to what is typically observed for other types of graphene, a large and uniform density of nucleation sites was observed in the case of EG and ascribed to the presence of the buffer layer at EG/SiC interface. The deposition process was characterized by Al2O3 island growth in the very early stages, followed by the formation of a continuous Al2O3 film (2.4 nm thick) after only 40 ALD cycles due to the islands coalescence, and subsequent layer-by-layer growth. Raman spectroscopy analyses showed low impact of the ALD process on the defects density and doping of EG. The EG strain was also almost unaffected by the deposition in the regime of island growth and coalescence, whereas a significant increase was observed after the formation of a compact Al2O3 film. The obtained results can have important implications for device applications of epitaxial graphene requiring the integration of ultra-thin high-k insulators.
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Submitted 28 July, 2020;
originally announced July 2020.
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On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy
Authors:
P. Fiorenza,
E. Schilirò,
F. Giannazzo,
C. Bongiorno,
M. Zielinski,
F. La Via,
F. Roccaforte
Abstract:
The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemiconductor (MOS) capacitors with nanoscale current and capacitance mapping using conductive atomic force (C-AFM) and scanning capacitance microscopy (SCM). Spatially resolved statistics of the oxide BD events by C-AFM revealed…
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The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemiconductor (MOS) capacitors with nanoscale current and capacitance mapping using conductive atomic force (C-AFM) and scanning capacitance microscopy (SCM). Spatially resolved statistics of the oxide BD events by C-AFM revealed that the extrinsic premature BD is correlated to the presence of peculiar extended defects, the anti-phase boundaries (APBs), in the 3C-SiC layer. SCM analyses showed a larger carrier density at the stacking faults (SFs) the 3C-SiC, that can be explained by a locally enhanced density of states in the conduction band. On the other hand, a local increase of minority carriers concentration was deduced for APBs, indicating that they behave as conducting defects having also the possibility to trap positive charges. The results were explained with the local electric field enhancement in correspondence of positively charged defects.
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Submitted 4 May, 2020;
originally announced May 2020.
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Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO$_2$/4H-SiC MOSFETs
Authors:
Patrick Fiorenza,
Filippo Giannazzo,
Mario Saggio,
Fabrizio Roccaforte
Abstract:
A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO$_2$/4H-SiC system over the whole 4H-SiC band gap. The temperature dependent instability of the threshold voltage in lateral MOSFETs is investigated and two separated trapping mechanisms were found. One mechanism is nearly temperature independent and it is correlated to the prese…
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A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO$_2$/4H-SiC system over the whole 4H-SiC band gap. The temperature dependent instability of the threshold voltage in lateral MOSFETs is investigated and two separated trapping mechanisms were found. One mechanism is nearly temperature independent and it is correlated to the presence of near interface oxide traps that are trapped via tunneling from the semiconductor. The second mechanism, having an activation energy of 0.1 eV, has been correlated to the presence of intrinsic defects at the SiO$_2$/4H-SiC interface.
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Submitted 30 April, 2020;
originally announced April 2020.
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Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
Authors:
Monia Spera,
Domenico Corso,
Salvatore Di Franco,
Giuseppe Greco,
Andrea Severino,
Patrick Fiorenza,
Filippo Giannazzo,
Fabrizio Roccaforte
Abstract:
This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30 - 200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about 1020 at/cm3. The implanted samples were annealed at high temperatures (1675-1825 °C). Morphological analyses of the…
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This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30 - 200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about 1020 at/cm3. The implanted samples were annealed at high temperatures (1675-1825 °C). Morphological analyses of the annealed samples revealed only a slight increase of the surface roughness RMS up to 1775°C, while this increase becomes more significant at 1825°C (RMS=1.2nm). Room temperature Hall measurements resulted in a hole concentration in the range 0.65-1.34x1018/cm3 and mobility values in the order of 21-27 cm2V-1s-1. The temperature dependent electrical measurements allowed to estimate an activation energy of the Al-implanted specie of about 110 meV (for the post-implantation annealing at 1675°C) and a fraction of active p-type Al-dopant ranging between 39% and 56%. The results give useful indications for the fabrication of 4H-SiC JBS and MOSFETs.
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Submitted 23 April, 2021; v1 submitted 22 January, 2020;
originally announced January 2020.
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Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis
Authors:
Patrick Fiorenza,
Ferdinando Iucolano,
Giuseppe Nicotra,
Corrado Bongiorno,
Ioannis Deretzis,
Antonino La Magna,
Filippo Giannazzo,
Mario Saggio,
Corrado Spinella,
Fabrizio Roccaforte
Abstract:
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of metal-oxide-semiconductor field effect transistor (MOSFETs). In this paper, near interface oxide traps (NIOTs) in lateral 4H-SiC MOSFETs were investigated combining transien…
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Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of metal-oxide-semiconductor field effect transistor (MOSFETs). In this paper, near interface oxide traps (NIOTs) in lateral 4H-SiC MOSFETs were investigated combining transient gate capacitance measurements (C-t) and state of the art scanning transmission electron microscopy in electron energy loss spectroscopy (STEM-EELS) with sub-nm resolution. The C-t measurements as a function of temperature indicated that the effective NIOTs discharge time is temperature independent and electrons from NIOTs are emitted toward the semiconductor via-tunnelling. The NIOTs discharge time was modelled taking into account also the interface state density in a tunnelling relaxation model and it allowed to locate traps within a tunnelling distance up to 1.3nm from the SiO2/4H-SiC interface. On the other hand, sub-nm resolution STEM-EELS revealed the presence of a Non-Abrupt (NA) SiO2/4H-SiC interface. The NA interface shows the re-arrangement of the carbon atoms in a sub-stoichiometric SiOx matrix. A mixed sp2/sp3 carbon hybridization in the NA interface region suggests that the interfacial carbon atoms have lost their tetrahedral SiC coordination.
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Submitted 14 January, 2020;
originally announced January 2020.
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Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy
Authors:
F. Giannazzo,
G. Greco,
S. Di Franco,
P. Fiorenza,
I. Deretzis,
A. La Magna,
C. Bongiorno,
M. Zimbone,
F. La Via,
M. Zielinski,
F. Roccaforte
Abstract:
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However, the specific role of the different defects on the electronic transport is still under debate. In this work, a macro- and nano-scale characterization o…
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In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However, the specific role of the different defects on the electronic transport is still under debate. In this work, a macro- and nano-scale characterization of Schottky contacts on 3C-SiC/Si was carried out, to elucidate the impact of the anti-phase-boundaries (APBs) and stacking-faults (SFs) on the forward and reverse current-voltage characteristics of these devices. Current mapping of 3C-SiC by conductive atomic force microscopy (CAFM) directly showed the role of APBs as the main defects responsible of the reverse bias leakage, while both APBs and SFs were shown to work as preferential current paths under forward polarization. Distinct differences between these two kinds of defects were also confirmed by electronic transport simulations of a front-to-back contacted SF and APB. These experimental and simulation results provide a picture of the role played by different types of extended defects on the electrical transport in vertical or quasi-vertical devices based on 3C-SiC/Si, and can serve as a guide for improving material quality by defects engineering.
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Submitted 16 January, 2020; v1 submitted 27 December, 2019;
originally announced December 2019.
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Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC
Authors:
S. Rascunà,
P. Badalà,
C. Tringali,
C. Bongiorno,
E. Smecca,
A. Alberti,
S. Di Franco,
F. Giannazzo,
G. Greco,
F. Roccaforte,
M. Saggio
Abstract:
This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm thick, have been sputtered on the back-side of heavily doped 110 um 4H-SiC thinned substrates after mechanical grinding. Then, to achieve Ohmic behavior, the metal films have been irradiated with an UV excimer laser with…
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This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm thick, have been sputtered on the back-side of heavily doped 110 um 4H-SiC thinned substrates after mechanical grinding. Then, to achieve Ohmic behavior, the metal films have been irradiated with an UV excimer laser with a wavelength of 310 nm, an energy density of 4.7 J/cm2 and pulse duration of 160 ns. The morphological and structural properties of the samples were analyzed by means of different techniques. Nanoscale electrical analyses by conductive Atomic Force Microscopy (C-AFM) allowed correlating the morphology of the annealed metal films with their local electrical properties. Ohmic behavior of the contacts fabricated by laser annealing have been investigated and compared with the standard Rapid Thermal Annealing (RTA) process. Finally, it was integrated in the fabrication of 650V SiC Schottky diodes.
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Submitted 7 June, 2019;
originally announced June 2019.
