Showing 1–10 of 10 results for author: Giampietri, A

Revealing the conduction band and pseudovector potential in 2D moiré semiconductors

Authors: Abigail J. Graham, Heonjoon Park, Paul V. Nguyen, James Nunn, Viktor Kandyba, Mattia Cattelan, Alessio Giampietri, Alexei Barinov, Kenji Watanabe, Takashi Taniguchi, Anton Andreev, Mark Rudner, Xiaodong Xu, Neil R. Wilson, David H. Cobden

Abstract: Stacking monolayer semiconductors results in moiré patterns that host many correlated and topological electronic phenomena, but measurements of the basic electronic structure underpinning these phenomena are scarce. Here, we investigate the properties of the conduction band in moiré heterobilayers using submicron angle-resolved photoemission spectroscopy with electrostatic gating, focusing on the… ▽ More Stacking monolayer semiconductors results in moiré patterns that host many correlated and topological electronic phenomena, but measurements of the basic electronic structure underpinning these phenomena are scarce. Here, we investigate the properties of the conduction band in moiré heterobilayers using submicron angle-resolved photoemission spectroscopy with electrostatic gating, focusing on the example of WS2/WSe2. We find that at all twist angles the conduction band edge is the K-point valley of the WS2, with a band gap of 1.58 +- 0.03 eV. By resolving the conduction band dispersion, we observe an unexpectedly small effective mass of 0.15 +- 0.02 m_e. In addition, we observe replicas of the conduction band displaced by reciprocal lattice vectors of the moiré superlattice. We present arguments and evidence that the replicas are due to modification of the conduction band states by the moiré potential rather than to final-state diffraction. Interestingly, the replicas display an intensity pattern with reduced, 3-fold symmetry, which we show implicates the pseudo vector potential associated with in-plane strain in moiré band formation. △ Less

Submitted 19 September, 2023; originally announced September 2023.

Comments: Main text: 12 pages, 4 figures. Appended Supporting Information: 10 pages, 11 figures

Observation of Γ-valley moiré bands and emergent hexagonal lattice in twisted transition metal dichalcogenides

Authors: Ding Pei, Binbin Wang, Zishu Zhou, Zhihai He, Liheng An, Shanmei He, Cheng Chen, Yiwei Li, Liyang Wei, Aiji Liang, Jose Avila, Pavel Dudin, Viktor Kandyba, Alessio Giampietri, Mattia Cattelan, Alexei Barinov, Zhongkai Liu, Jianpeng Liu, Hongming Weng, Ning Wang, Jiamin Xue, Yulin Chen

Abstract: Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moiré bands with specific charge distributions in moiré superlattices. Here, combining angle-resolved photoemission spectroscopy with sub-micron spatial resolution (μ-ARPES) and scanning tunneling microscopy (STM), we performed a systemat… ▽ More Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moiré bands with specific charge distributions in moiré superlattices. Here, combining angle-resolved photoemission spectroscopy with sub-micron spatial resolution (μ-ARPES) and scanning tunneling microscopy (STM), we performed a systematic investigation on the electronic structure of 5.1° twisted bilayer WSe2 that hosts correlated insulating and zero-resistance states. Interestingly, contrary to one's expectation, moiré bands were observed only at Γ-valley but not K-valley in μ-ARPES measurements; and correspondingly, our STM measurements clearly identified the real-space honeycomb- and Kagome-shaped charge distributions at the moiré length scale associated with the Γ-valley moiré bands. These results not only reveal the unsual valley dependent moiré-modified electronic structure in twisted transition metal dichalcogenides, but also highlight the Γ-valley moiré bands as a promising platform for exploring strongly correlated physics in emergent honeycomb and Kagome lattices at different energy scales. △ Less

Submitted 27 May, 2022; originally announced May 2022.

Comments: 29 pages, accepted by PRX

Domain dependent Fermi arcs observed in a striped phase dichalcogenide

Authors: T. Mizokawa, A. Barinov, V. Kandyba, A. Giampietri, R. Matsumoto, Y. Okamoto, K. Takubo, K. Miyamoto, T. Okuda, S. Pyon, H. Ishii, K. Kudo, M. Nohara, N. L. Saini

Abstract: Angle-resolved photoemission spectromicroscopy on IrTe2 reveals evolution of mesoscopic striped domains across its first order phase transition at about 280 K. The striped texture of the domains is characterized by a herringbone arrangement of the electronic anisotropy axes. Under further cooling down to 47 K, the striped domains evolve into trijunction domains with the electronic anisotropy in th… ▽ More Angle-resolved photoemission spectromicroscopy on IrTe2 reveals evolution of mesoscopic striped domains across its first order phase transition at about 280 K. The striped texture of the domains is characterized by a herringbone arrangement of the electronic anisotropy axes. Under further cooling down to 47 K, the striped domains evolve into trijunction domains with the electronic anisotropy in three directions. Each domain harbors quasi one-dimensional surface bands forming Fermi arcs with peculiar spin polarization. The Fermi arc corresponds to an edge state of the two-dimensional bulk electronic states truncated at the surface, indicating an interesting interplay between the symmetry breaking and the surface electronic states. △ Less

Submitted 11 December, 2021; originally announced December 2021.

Comments: 11 pages + 5 figures

Observation and control of the weak topological insulator state in ZrTe5

Authors: Peng Zhang, Ryo Noguchi, Kenta Kuroda, Chun Lin, Kaishu Kawaguchi, Koichiro Yaji, Ayumi Harasawa, Mikk Lippmaa, Simin Nie, Hongming Weng, V. Kandyba, A. Giampietri, A. Barinov, Qiang Li, G. D. Gu, Shik Shin, Takeshi Kondo

Abstract: A quantum spin Hall insulator hosts topological states at the one-dimensional edge, along which backscattering by nonmagnetic impurities is strictly prohibited and dissipationless current flows. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces of crystals. The enhanced confinement could provide a route for dissipationless… ▽ More A quantum spin Hall insulator hosts topological states at the one-dimensional edge, along which backscattering by nonmagnetic impurities is strictly prohibited and dissipationless current flows. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces of crystals. The enhanced confinement could provide a route for dissipationless current and better advantages for applications relative to the widely studied strong topological insulators. However, the topological side surface is usually not cleavable and is thus hard to observe by angle-resolved photoemission spectroscopy (ARPES), which has hindered the revealing of the electronic properties of WTIs. Here, we visualize the topological surface states of the WTI candidate ZrTe5 for the first time by spin and angle-resolved photoemission spectroscopy: a quasi-1D band with spin-momentum locking was revealed on the side surface. We further demonstrate that the bulk band gap in ZrTe5 is controlled by strain to the crystal, realizing a more stabilized WTI state or an ideal Dirac semimetal state depending on the direction of the external strain. The highly directional spin-current and the tunable band gap we found in ZrTe5 will provide an excellent platform for applications. △ Less

Submitted 9 December, 2020; originally announced December 2020.

Comments: 8 pages, 4 figures. Accepted by Nature Communications

Journal ref: Nature Communications 12, 406 (2021)

Moiré superlattice effects and band structure evolution in near-30-degree twisted bilayer graphene

Authors: Matthew J. Hamer, Alessio Giampietri, Viktor Kandyba, Francesca Genuzio, Tevfik O. Mentes, Andrea Locatelli, Roman V. Gorbachev, Alexei Barinov, Marcin Mucha-Kruczynski

Abstract: In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moiré periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Bri… ▽ More In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moiré periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Brillouin zone, including the vicinity of the saddle point at $M$ and across 3 eV from the Dirac points. In this energy range, we resolve several moiré minibands and detect signatures of secondary Dirac points in the reconstructed dispersions. For twists $θ>21.8^{\circ}$, the low-energy minigaps are not due to cone anti-crossing as is the case at smaller twist angles but rather due to moiré scattering of electrons in one graphene layer on the potential of the other which generates intervalley coupling. Our work demonstrates robustness of mechanisms which enable engineering of electronic dispersions of stacks of two-dimensional crystals by tuning the interface twist angles. It also shows that large-angle tBLG hosts electronic minigaps and van Hove singularities of different origin which, given recent progress in extreme doping of graphene, could be explored experimentally. △ Less

Submitted 27 January, 2022; v1 submitted 19 October, 2020; originally announced October 2020.

Comments: main text: 25 pages, 5 figures; supplement: 22 pages, 7 figures

Journal ref: ACS Nano 16, 1954 (2022)

Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures

Authors: Abigail J. Graham, Johanna Zultak, Matthew J. Hamer, Viktor Zolyomi, Samuel Magorrian, Alexei Barinov, Viktor Kandyba, Alessio Giampietri, Andrea Locatelli, Francesca Genuzio, Natalie C. Teutsch, Temok Salazar, Nicholas D. M. Hine, Vladimir I. Fal'ko, Roman V. Gorbachev, Neil R. Wilson

Abstract: In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattic… ▽ More In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattice in the neighbouring layer. Using angle-resolved photoemission spectroscopy to study a graphene on InSe heterostructure, we present evidence that interlayer umklapp processes can cause hybridization between bands from neighbouring layers in regions of the Brillouin zone where bands from only one layer are expected, despite no evidence for moir/'e-induced replica bands. This phenomenon manifests itself as 'ghost' anti-crossings in the InSe electronic dispersion. Applied to a range of suitable 2DM pairs, this phenomenon of interlayer umklapp hybridization can be used to create strong mixing of their electronic states, giving a new tool for twist-controlled band structure engineering. △ Less

Submitted 8 January, 2021; v1 submitted 27 August, 2020; originally announced August 2020.

Comments: Main paper: 21 pages, 4 figures. Supplementary Material: 12 pages, 7 figures

Journal ref: 2D Materials, 8, 015016. 2021

Direct evidence for flat bands in twisted bilayer graphene from nano-ARPES

Authors: Simone Lisi, Xiaobo Lu, Tjerk Benschop, Tobias A. de Jong, Petr Stepanov, Jose R. Duran, Florian Margot, Irène Cucchi, Edoardo Cappelli, Andrew Hunter, Anna Tamai, Viktor Kandyba, Alessio Giampietri, Alexei Barinov, Johannes Jobst, Vincent Stalman, Maarten Leeuwenhoek, Kenji Watanabe, Takashi Taniguchi, Louk Rademaker, Sense Jan van der Molen, Milan Allan, Dmitri K. Efetov, Felix Baumberger

Abstract: Transport experiments in twisted bilayer graphene revealed multiple superconducting domes separated by correlated insulating states. These properties are generally associated with strongly correlated states in a flat mini-band of the hexagonal moiré superlattice as it was predicted by band structure calculations. Evidence for such a flat band comes from local tunneling spectroscopy and electronic… ▽ More Transport experiments in twisted bilayer graphene revealed multiple superconducting domes separated by correlated insulating states. These properties are generally associated with strongly correlated states in a flat mini-band of the hexagonal moiré superlattice as it was predicted by band structure calculations. Evidence for such a flat band comes from local tunneling spectroscopy and electronic compressibility measurements, reporting two or more sharp peaks in the density of states that may be associated with closely spaced van Hove singularities. Direct momentum resolved measurements proved difficult though. Here, we combine different imaging techniques and angle resolved photoemission with simultaneous real and momentum space resolution (nano-ARPES) to directly map the band dispersion in twisted bilayer graphene devices near charge neutrality. Our experiments reveal large areas with homogeneous twist angle that support a flat band with spectral weight that is highly localized in momentum space. The flat band is separated from the dispersive Dirac bands which show multiple moiré hybridization gaps. These data establish the salient features of the twisted bilayer graphene band structure. △ Less

Submitted 6 February, 2020; originally announced February 2020.

Comments: Submitted to Nature Materials. Nat. Phys. (2020)

Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator

Authors: Ryo Noguchi, Masaru Kobayashi, Zhanzhi Jiang, Kenta Kuroda, Takanari Takahashi, Zifan Xu, Daehun Lee, Motoaki Hirayama, Masayuki Ochi, Tetsuroh Shirasawa, Peng Zhang, Chun Lin, Cédric Bareille, Shunsuke Sakuragi, Hiroaki Tanaka, So Kunisada, Kifu Kurokawa, Koichiro Yaji, Ayumi Harasawa, Viktor Kandyba, Alessio Giampietri, Alexei Barinov, Timur K. Kim, Cephise Cacho, Makoto Hashimoto , et al. (6 additional authors not shown)

Abstract: The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingl… ▽ More The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications. △ Less

Submitted 10 February, 2021; v1 submitted 4 February, 2020; originally announced February 2020.

Comments: Nature Materials, in press. The final version of this article is available online at https://doi.org/10.1038/s41563-020-00871-7

Band offset and gap tuning of tetragonal CuO-SrTiO3 heterojunctions

Authors: Giovanni Drera, Alessio Giampietri, Alfredo Febbrari, Maddalena Patrini, Maria Cristina Mozzati, Luigi Sangaletti

Abstract: In this work we analyze the electronic structure at the junction between a SrTiO3 (001) single crystal and a thin tetragonal CuO layer, grown by off-axis RF-sputtering. A detailed characterization of the film growth, based on atomic force microscopy and X-ray photoelectron diffraction measurements, demonstrates the epitaxial growth. We report several markers of a thickness-dependent modification o… ▽ More In this work we analyze the electronic structure at the junction between a SrTiO3 (001) single crystal and a thin tetragonal CuO layer, grown by off-axis RF-sputtering. A detailed characterization of the film growth, based on atomic force microscopy and X-ray photoelectron diffraction measurements, demonstrates the epitaxial growth. We report several markers of a thickness-dependent modification of the film gap, found on both Cu 2p and valence band spectra; through spectroscopic ellipsometry analysis, we provide a direct proof of a band gap increase of the tetragonal CuO layer (1.57 eV) with respect to the thicker monoclinic CuO layer (1.35 eV). This phenomenon is further discussed in the light of cluster calculations and DFT+U simulations. Finally, we report the full experimental band junction diagram, showing a staggered configuration suitable to charge-separation applications, such as photovoltaics and photocatalisys; this configuration is observed up to very low (<3 nm) film thickness due to the gap broadening effect. △ Less

Submitted 30 January, 2019; originally announced January 2019.

Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES

Authors: Matthew Hamer, Johanna Zultak, Anastasia V. Tyurnina, Viktor Zólyomi, Daniel Terry, Alexei Barinov, Alistair Garner, Jack Donoghue, Aidan P. Rooney, Viktor Kandyba, Alessio Giampietri, Abigail J. Graham, Natalie C. Teutsch, Xue Xia, Maciej Koperski, Sarah J. Haigh, Vladimir I. Fal'ko, Roman Gorbachev, Neil R. Wilson

Abstract: Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilaye… ▽ More Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilayers [7-11]. Here, we apply angle resolved photoemission spectroscopy with submicrometer spatial resolution ($μ$ARPES) to visualise the layer-dependent valence band structure of mechanically exfoliated crystals of InSe. We show that for 1 layer and 2 layer InSe the valence band maxima are away from the $\mathbfΓ$-point, forming an indirect gap, with the conduction band edge known to be at the $\mathbfΓ$-point. In contrast, for six or more layers the bandgap becomes direct, in good agreement with theoretical predictions. The high-quality monolayer and bilayer samples enables us to resolve, in the photoluminescence spectra, the band-edge exciton (A) from the exciton (B) involving holes in a pair of deeper valence bands, degenerate at $\mathbfΓ$, with the splitting that agrees with both $μ$ARPES data and the results of DFT modelling. Due to the difference in symmetry between these two valence bands, light emitted by the A-exciton should be predominantly polarised perpendicular to the plane of the two-dimensional crystal, which we have verified for few-layer InSe crystals. △ Less

Submitted 21 January, 2019; originally announced January 2019.

Journal ref: ACS Nano, 2019, 13, pp 2136-2142