UV hybrid photon detector based on GaN photocathodes and Si low gain avalanche diode
Authors:
Mohamed Boukhicha,
Thomas Y. Tsang,
Gabriele Giacomini,
Amir M. Dabiran,
Luca Cultrera
Abstract:
Photon detectors featuring single-photon sensitivity play a crucial role in various scientific domains, including high-energy physics, astronomy, and quantum optics. Fast response time, high quantum efficiency, and minimal dark counts are the characteristics that render them ideal candidates for detecting individual photons with exceptional signal-to-noise ratios, at frequencies in the the range o…
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Photon detectors featuring single-photon sensitivity play a crucial role in various scientific domains, including high-energy physics, astronomy, and quantum optics. Fast response time, high quantum efficiency, and minimal dark counts are the characteristics that render them ideal candidates for detecting individual photons with exceptional signal-to-noise ratios, at frequencies in the the range of hundreds of MHz. Here, we report on our first design and operational results on a Hybrid Photon Detector (HPD) that combines the high quantum efficiency of a Gallium Nitride (GaN) photocathode and the low noise characteristics of a Si-based Low-Gain Avalanche Diode (LGAD). This hybrid detection scheme has the potential to reach single-photon detection sensitivity with high quantum efficiency, low noise levels and capable of operating at hundreds of MHz repetition rates.
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Submitted 25 June, 2024;
originally announced June 2024.
Modeling of ion beam induced charge sharing experiments for the design of high resolution position sensitive detectors
Authors:
Jacopo Forneris,
David Jamieson,
Gabriele Giacomini,
Changyi Yang,
Ettore Vittone
Abstract:
In a multi-electrode device, the motion of free charge carriers generated by ionizing radiation induces currents on all the electrodes surrounding the active region [1]. The amount of charge induced in each sensitive electrode is a function of the device geometry, the transport parameters and the generation profile. Hence this charge sharing effect allows the signal from each sensitive electrode t…
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In a multi-electrode device, the motion of free charge carriers generated by ionizing radiation induces currents on all the electrodes surrounding the active region [1]. The amount of charge induced in each sensitive electrode is a function of the device geometry, the transport parameters and the generation profile. Hence this charge sharing effect allows the signal from each sensitive electrode to provide information about the electrical characteristics of the device, as well as information on the location and the profile of each ionization track. The effectiveness of such approach was recently demonstrated in Ion Beam Induced Charge (IBIC) experiments carried out using a 2 MeV He microbeam scanning over a sub-100 lm scale silicon device, where the ion strike location point was evaluated through a comparative analysis of the charge induced in two independent surface electrodes coupled to independent data acquisition systems [2]. In this report, we show that the Monte Carlo method [3] can be efficiently exploited to simulate this IBIC experiment and to model the experimental data, shedding light on the role played by carrier diffusion, electronic noise and ion beam spot size on the induction of charge in the sensitive electrodes. Moreover, the Monte Carlo method shows that information on the ion strike position can be obtained from the charge signals from the sensitive electrodes.
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Submitted 13 March, 2014;
originally announced March 2014.
