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Grain Size and Temperature-Dependent Response of 5-mol% Gd-Doped Ceria to Swift Heavy Ion Irradiation with 80 MeV Ag and 120 MeV Au Ions
Authors:
Waseem Ul Haq,
V. Grover,
Sanjay Kedia,
Santanu Ghosh
Abstract:
The response of 5-mol% Gd-doped ceria to swift heavy ion beam irradiation has been studied to observe the effects of changes in ion energies and environmental temperature. The study involved irradiating two different grain sizes (nano and bulk) with two different ion energies: 80 MeV Ag and 120 MeV Au. Additionally, a comprehensive analysis of Gd-doped ceria's response to ion beam irradiation at h…
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The response of 5-mol% Gd-doped ceria to swift heavy ion beam irradiation has been studied to observe the effects of changes in ion energies and environmental temperature. The study involved irradiating two different grain sizes (nano and bulk) with two different ion energies: 80 MeV Ag and 120 MeV Au. Additionally, a comprehensive analysis of Gd-doped ceria's response to ion beam irradiation at high temperatures (1000 K) was conducted, taking into account the effect of grain size dependency. Based on GIXRD and Raman spectroscopy, it is evident that electronic excitation from 80 MeV Ag and 120 MeV Au ions at a fluence $1 \times 10^{14}$ ions/cm$^2$ caused damage to Gd-doped ceria samples. However, bulk grain size shows significant stability against SHI in all cases. These findings align with thermal spike simulations and indicate the formation of ion tracks due to electronic excitation by Swift Heavy Ion beam irradiation.
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Submitted 7 July, 2025;
originally announced July 2025.
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Tailoring Magnetic Properties of Zigzag Structured Thin Films via Interface Engineering and Columnar Nano-structuring
Authors:
Sharanjeet Singh,
Manisha Priyadarsini,
Anup Kumar Bera,
Smritiparna Ghosh,
Varimalla R. Reddy,
Sarathlal Koyiloth Vayalil,
Benedikt Sochor,
Dileep Kumar
Abstract:
We report the emergence of a novel interface-induced shape anisotropy component in zigzag-structured thin films fabricated via Sequential Oblique Angle Deposition (S-OAD). In this study, we systematically investigate cobalt (Co) and Co2FeAl (CFA) thin films by varying column length, number of bilayers, and magneto-crystalline anisotropy (MCA) to explore how structural modulation affects magnetic b…
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We report the emergence of a novel interface-induced shape anisotropy component in zigzag-structured thin films fabricated via Sequential Oblique Angle Deposition (S-OAD). In this study, we systematically investigate cobalt (Co) and Co2FeAl (CFA) thin films by varying column length, number of bilayers, and magneto-crystalline anisotropy (MCA) to explore how structural modulation affects magnetic behavior. Using magneto-optical Kerr effect (MOKE) measurements in conjunction with synchrotron-based grazing-incidence small-angle X-ray scattering (GISAXS) and 2D X-ray diffraction (2DXRD), we reveal that the interplay between interface-induced, shape, and crystalline anisotropies allows for a tunable magnetic response, ranging from isotropic to anisotropic behavior. The observed uniaxial magnetic anisotropy (UMA) exceeds that of conventional OAD films, while column merging is effectively suppressed through precise multilayer engineering. Structural analysis confirms that periodic, high-density interfaces at the junctions of oppositely tilted columns are central to this anisotropy control. These findings demonstrate that interface engineering and columnar nanostructuring within zigzag nanostructures offer a powerful route for tailoring magnetic properties in zigzag thin films, enabling their application in next-generation spintronic and magnetic sensor technologies.
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Submitted 24 June, 2025;
originally announced June 2025.
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Exploring Topological and Localization Phenomena in SSH Chains under Generalized AAH Modulation: A Computational Approach
Authors:
Souvik Ghosh,
Sayak Roy
Abstract:
The Su-Schrieffer-Heeger (SSH) model serves as a canonical example of a one-dimensional topological insulator, yet its behavior under more complex, realistic conditions remains a fertile ground for research. This paper presents a comprehensive computational investigation into generalized SSH models, exploring the interplay between topology, quasi-periodic disorder, non-Hermiticity, and time-depend…
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The Su-Schrieffer-Heeger (SSH) model serves as a canonical example of a one-dimensional topological insulator, yet its behavior under more complex, realistic conditions remains a fertile ground for research. This paper presents a comprehensive computational investigation into generalized SSH models, exploring the interplay between topology, quasi-periodic disorder, non-Hermiticity, and time-dependent driving. Using exact diagonalization and specialized numerical solvers, we map the system's phase space through its spectral properties and localization characteristics, quantified by the Inverse Participation Ratio (IPR). We demonstrate that while the standard SSH model exhibits topologically protected edge states, these are destroyed by a localization transition induced by strong Aubry-André-Harper (AAH) modulation. Further, we employ unsupervised machine learning (PCA) to autonomously classify the system's phases, revealing that strong localization can obscure underlying topological signatures. Extending the model beyond Hermiticity, we uncover the non-Hermitian skin effect, a dramatic localization of all bulk states at a boundary. Finally, we apply a periodic Floquet drive to a topologically trivial chain, successfully engineering a Floquet topological insulator characterized by the emergence of anomalous edge states at the boundaries of the quasi-energy zone. These findings collectively provide a multi-faceted view of the rich phenomena hosted in generalized 1D topological systems.
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Submitted 11 June, 2025;
originally announced June 2025.
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Unconventional S-orbital state of Tb and cooperative Ru(4d)-Tb(4f) spin-ordering in strongly correlated 4d-4f system, Ba3TbRu2O9
Authors:
E. Kushwaha,
G. Roy,
A. M. dos Santos,
M. Kumar,
S. Ghosh,
T. Heitmann,
T. Basu
Abstract:
The 6H-perovskite Ba3RRu2O9 (R = rare-earth), composed of Ru2O9 dimers connected through RO6 octahedra, exhibits an intriguing variety of magnetic ground states, ranging from non-magnetic to ferromagnetic and antiferromagnetic, depending on the specific R ion. In this study, we investigate the compound Ba3TbRu2O9 using magnetic susceptibility measurements and time-of-flight neutron diffraction exp…
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The 6H-perovskite Ba3RRu2O9 (R = rare-earth), composed of Ru2O9 dimers connected through RO6 octahedra, exhibits an intriguing variety of magnetic ground states, ranging from non-magnetic to ferromagnetic and antiferromagnetic, depending on the specific R ion. In this study, we investigate the compound Ba3TbRu2O9 using magnetic susceptibility measurements and time-of-flight neutron diffraction experiments. Our combined bulk and microscopic analyses reveal that the Tb4+ (4f7) electronic configuration results in an s-like state with an orbital moment L=0 and spin-only value of S=7/2, and Ru4+ exhibits a spin-only value of S=1 despite the presence of strong spin-lattice coupling in this compound, representing a sharp contrast to other reported members of this family. A cooperative 4d-4f spin ordering is observed below the Neel temperature (around 9.5 K), indicating strong Ru(4d)=Tb(4f) correlations in the system. The Tb-moments order antiferromagnetically in the bc-plane, whereas the Ru-moments are aligned antiferromagnetically along the b-axis. Furthermore, a collinear antiferromagnetic arrangement of spins is observed within the Ru2O9 dimers throughout the structure, unlike other reported members of this series (e.g., Ho and Nd).
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Submitted 9 June, 2025;
originally announced June 2025.
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Impact of Temporally Correlated Dephasing Noise on the Fidelity of the 2-Qubit Deutsch-Jozsa Algorithm
Authors:
Souvik Ghosh
Abstract:
Understanding the influence of realistic noise on quantum algorithms is paramount for the advancement of quantum computation. While often modeled as Markovian, environmental noise in quantum systems frequently exhibits temporal correlations, leading to non-Markovian dynamics that can significantly alter algorithmic performance. This paper investigates the impact of temporally correlated dephasing…
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Understanding the influence of realistic noise on quantum algorithms is paramount for the advancement of quantum computation. While often modeled as Markovian, environmental noise in quantum systems frequently exhibits temporal correlations, leading to non-Markovian dynamics that can significantly alter algorithmic performance. This paper investigates the impact of temporally correlated dephasing noise, modeled by the Ornstein-Uhlenbeck (OU) process, on the fidelity of the 2-qubit Deutsch-Jozsa algorithm. We perform numerical simulations using Qiskit, systematically varying the noise strength ($σ_{\text{OU}}$) and correlation time ($τ_c$) of the OU process. Our results demonstrate that the algorithm's fidelity exhibits a non-monotonic dependence on $τ_c$, particularly at higher noise strengths, with certain intermediate correlation times proving more detrimental than others. We find that a standard Markovian dephasing model, matched to the single-step error variance of the OU process, accurately predicts fidelity only in the limit of very short correlation times. For longer correlation times, the Markovian approximation often overestimates the algorithm's fidelity, failing to capture the complex error dynamics introduced by the noise memory. These findings highlight the necessity of incorporating non-Markovian characteristics for accurate performance assessment of quantum algorithms on near-term devices and underscore the limitations of simpler, memoryless noise models.
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Submitted 5 June, 2025;
originally announced June 2025.
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Numerical Investigation of Stub Length Influence on Dispersion Relations and Parity Effect in Aharonov-Bohm Rings
Authors:
Souvik Ghosh
Abstract:
Aharonov-Bohm (AB) rings with side-attached stubs are model systems for quantum-interference studies in mesoscopic physics. The geometry of such systems, particularly the ratio of stub length ($v$) to ring circumference ($u$), can significantly alter their electronic states. In this work, we solve Deo's transcendental mode-condition equation (Eq. 2.15 from Deo, 2021 [Deo2021]) numerically -- using…
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Aharonov-Bohm (AB) rings with side-attached stubs are model systems for quantum-interference studies in mesoscopic physics. The geometry of such systems, particularly the ratio of stub length ($v$) to ring circumference ($u$), can significantly alter their electronic states. In this work, we solve Deo's transcendental mode-condition equation (Eq. 2.15 from Deo, 2021 [Deo2021]) numerically -- using Python's NumPy and SciPy libraries -- for ring-stub geometries with $v/u = 0.200, 0.205,$ and $0.210$ to generate dispersion relations ($ku$ vs. $Φ/Φ_{0}$) and the underlying function $\text{Re}(1/T)$. We find that changing $v/u$ shifts several of the six lowest calculated dispersion branches, with $Δ(ku)$ up to approximately $0.34$ for the 6th branch at $Φ=0$ when comparing $v/u=0.200$ and $v/u=0.210$. This also alters gap widths. Notably, for $v/u=0.205$ and $v/u=0.210$, the 5th and 6th consecutive calculated modes both exhibit paramagnetic slopes near zero Aharonov-Bohm flux, indicating the parity breakdown initiates at or below $v/u=0.205$. This directly demonstrates a breakdown of the simple alternating parity effect predicted by Deo (2021) [Deo2021]. These results highlight the sensitivity of mesoscopic ring spectra to fine-tuning of stub length, with potential implications for experimental control of persistent currents, as further illustrated by calculations of the net current.
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Submitted 5 June, 2025;
originally announced June 2025.
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Itinerant versus localized magnetism in spin gapped metallic half-Heusler compounds: Stoner criterion and magnetic interactions
Authors:
E. Sasıoglu,
W. Beida,
S. Ghosh,
M. Tas,
B. Sanyal,
S. Lounis,
S. Blugel,
I. Mertig,
I. Galanakis
Abstract:
Spin gapped metals have recently emerged as promising candidates for spintronic and nanoelectronic applications, enabling functionalities such as sub-60mV/dec switching, negative differential resistance, and non-local spin-valve effects in field-effect transistors. Realizing these functionalities, however, requires a deeper understanding of their magnetic behavior, which is governed by a subtle in…
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Spin gapped metals have recently emerged as promising candidates for spintronic and nanoelectronic applications, enabling functionalities such as sub-60mV/dec switching, negative differential resistance, and non-local spin-valve effects in field-effect transistors. Realizing these functionalities, however, requires a deeper understanding of their magnetic behavior, which is governed by a subtle interplay between localized and itinerant magnetism. This interplay is particularly complex in spin gapped metallic half-Heusler compounds, whose magnetic properties remain largely unexplored despite previous studies of their electronic structure. In this work, we systematically investigate the magnetic behavior of spin gapped metallic half-Heusler compounds XYZ (X = Fe, Co, Ni, Rh, Ir, Pd, Pt; Y = Ti, V, Zr, Hf, Nb, Ta; Z = In, Sn, Sb), revealing clear trends. Co- and Ni-based compounds predominantly exhibit itinerant magnetism, whereas Ti-, V-, and Fe-based systems may host localized moments, itinerant moments, or a coexistence of both. To uncover the origin of magnetism, we apply the Stoner model, with the Stoner parameter I estimated from Coulomb interaction parameters (Hubbard U and Hund's exchange J) computed using the constrained random phase approximation (cRPA). Our analysis shows that compounds not satisfying the Stoner criterion tend to remain non-magnetic. On the contrary compounds, which satisfy the Stoner criterion, generally exhibit magnetic ordering highlighting the crucial role of electronic correlations and band structure effects in the emergence of magnetism. For compounds with magnetic ground states, we compute Heisenberg exchange parameters, estimate Curie temperatures (T_C), and analyze spin-wave properties, including magnon dispersions and stiffness constants.
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Submitted 3 June, 2025;
originally announced June 2025.
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Linked skyrmions in shifted magnetic bilayer
Authors:
Sumit Ghosh,
Hiroshi Katsumoto,
Gustav Bihlmayer,
Moritz Sallermann,
Vladyslav M. Kuchkin,
Filipp N. Rybakov,
Olle Eriksson,
Stefan Blügel,
Nikolai S. Kiselev
Abstract:
We present a shifted magnetic bilayer that exhibits various magnetic phases and magnetic textures with arbitrarily large topological numbers. The proposed system is characterised by a mutually orthogonal Dzyaloshinskii-Moriya interaction (DMI) in two different layers which can be induced by suitably placing non-magnetic atom with spin-orbit coupling. At weak interlayer coupling, the ground state r…
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We present a shifted magnetic bilayer that exhibits various magnetic phases and magnetic textures with arbitrarily large topological numbers. The proposed system is characterised by a mutually orthogonal Dzyaloshinskii-Moriya interaction (DMI) in two different layers which can be induced by suitably placing non-magnetic atom with spin-orbit coupling. At weak interlayer coupling, the ground state resembles a checker-board pattern containing regions with unfavourable magnetic alignment which we call anti-aligned points. At finite interlayer coupling and finite external magnetic field, the bilayer can demonstrate a new class of magnetic solitons where multiple magnetic solitons can be connected by topological point defects which we call linked skyrmion. In addition to that the model also demonstrates conventional skyrmion-bags and $kπ$-skyrmions. Finally, with rigorous first principle calculations, we propose a suitable material candidate where these magnetic configurations can be observed.
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Submitted 2 June, 2025;
originally announced June 2025.
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Effect of Vaccine Dose Intervals: Considering Immunity Levels, Vaccine Efficacy, and Strain Variants for Disease Control Strategy
Authors:
Samiran Ghosh,
Malay Banerjee,
Amit K Chattopadhyay
Abstract:
In this study, we present an immuno-epidemic model to understand mitigation options during an epidemic break. The model incorporates comorbidity and multiple-vaccine doses through a system of coupled integro-differential equations to analyze the epidemic rate and intensity from a knowledge of the basic reproduction number and time-distributed rate functions. Our modeling results show that the inte…
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In this study, we present an immuno-epidemic model to understand mitigation options during an epidemic break. The model incorporates comorbidity and multiple-vaccine doses through a system of coupled integro-differential equations to analyze the epidemic rate and intensity from a knowledge of the basic reproduction number and time-distributed rate functions. Our modeling results show that the interval between vaccine doses is a key control parameter that can be tuned to significantly influence disease spread. We show that multiple doses induce a hysteresis effect in immunity levels that offers a better mitigation alternative compared to frequent vaccination which is less cost-effective while being more intrusive. Optimal dosing intervals, emphasizing the cost-effectiveness of each vaccination effort, and determined by various factors such as the level of immunity and efficacy of vaccines against different strains, appear to be crucial in disease management. The model is sufficiently generic that can be extended to accommodate specific disease forms.
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Submitted 27 May, 2025;
originally announced May 2025.
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Highly Enhanced robust room temperature ferromagnetism in CVD-grown nano-dimensional MoS2 flakes by modifying edges and defect engineering
Authors:
Sharmistha Dey,
Nahid Chaudhary,
Ulrich Kentsch,
Rajendra Singh,
Pankaj Srivastava,
Santanu Ghosh
Abstract:
The alterations in the magnetic properties and electronic structure of chemical vapor deposition (CVD) grown nano-dimensional molybdenum disulfide (MoS2) after low energy ion irradiation are thoroughly investigated. The formation of pure hexagonal 2-H phase has been identified by Raman spectroscopy and X-ray diffraction (XRD). The pristine samples are irradiated by Argon (Ar) ions with low energy…
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The alterations in the magnetic properties and electronic structure of chemical vapor deposition (CVD) grown nano-dimensional molybdenum disulfide (MoS2) after low energy ion irradiation are thoroughly investigated. The formation of pure hexagonal 2-H phase has been identified by Raman spectroscopy and X-ray diffraction (XRD). The pristine samples are irradiated by Argon (Ar) ions with low energy at different fluences. A comprehensive analysis of Raman spectroscopy data manifests the formation of lattice defects like S-vacancies across the samples after irradiation. Triangular-flake formation in the pristine sample is confirmed by field emission scanning electron microscopy (FESEM) images. After increasing irradiation fluences the big flakes commenced to fragment into smaller ones enhancing the number of edge-terminated structures. The electron probe microanalyzer (EPMA) analysis verifies the absence of any magnetic impurity. Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS) study confirm the formation of S-vacancies after irradiation. The pristine sample exhibits diamagnetic behavior at room temperature. The saturation magnetization value increases with increasing the ion irradiation fluences, and the sample irradiated with 1e15 ions/cm2 demonstrates the highest magnetization value of 4.18 emu/g. The impact of edge-terminated structure and point defects like S-vacancies to induce room-temperature ferromagnetism (RTFM) is thoroughly examined.
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Submitted 27 May, 2025;
originally announced May 2025.
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F-ANcGAN: An Attention-Enhanced Cycle Consistent Generative Adversarial Architecture for Synthetic Image Generation of Nanoparticles
Authors:
Varun Ajith,
Anindya Pal,
Saumik Bhattacharya,
Sayantari Ghosh
Abstract:
Nanomaterial research is becoming a vital area for energy, medicine, and materials science, and accurate analysis of the nanoparticle topology is essential to determine their properties. Unfortunately, the lack of high-quality annotated datasets drastically hinders the creation of strong segmentation models for nanoscale imaging. To alleviate this problem, we introduce F-ANcGAN, an attention-enhan…
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Nanomaterial research is becoming a vital area for energy, medicine, and materials science, and accurate analysis of the nanoparticle topology is essential to determine their properties. Unfortunately, the lack of high-quality annotated datasets drastically hinders the creation of strong segmentation models for nanoscale imaging. To alleviate this problem, we introduce F-ANcGAN, an attention-enhanced cycle consistent generative adversarial system that can be trained using a limited number of data samples and generates realistic scanning electron microscopy (SEM) images directly from segmentation maps. Our model uses a Style U-Net generator and a U-Net segmentation network equipped with self-attention to capture structural relationships and applies augmentation methods to increase the variety of the dataset. The architecture reached a raw FID score of 17.65 for TiO$_2$ dataset generation, with a further reduction in FID score to nearly 10.39 by using efficient post-processing techniques. By facilitating scalable high-fidelity synthetic dataset generation, our approach can improve the effectiveness of downstream segmentation task training, overcoming severe data shortage issues in nanoparticle analysis, thus extending its applications to resource-limited fields.
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Submitted 23 May, 2025;
originally announced May 2025.
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Influence of active breathing on rheology and jamming of amorphous solids: insights from microscopic and mesoscale analysis
Authors:
Sayantan Ghosh,
Magali Le Goff,
Pinaki Chaudhuri,
Kirsten Martens
Abstract:
We study the flow behavior and unjamming transition in dense assemblies of actively deforming particles that periodically change size, a process that we refer to as breathing. Using extensive molecular dynamics simulations and a complementary mesoscale elasto-plastic model, we explore how this internal activity influences plasticity and rheology. At low amplitudes of breathing, the system remains…
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We study the flow behavior and unjamming transition in dense assemblies of actively deforming particles that periodically change size, a process that we refer to as breathing. Using extensive molecular dynamics simulations and a complementary mesoscale elasto-plastic model, we explore how this internal activity influences plasticity and rheology. At low amplitudes of breathing, the system remains jammed and displays localized, reversible rearrangements. As the amplitude of the breathing increases beyond a critical threshold, the system undergoes an activity-induced fluidization marked by a surge in plastic events and a drop in yield stress. The flow curve analysis reveals a transition from yield-stress behavior to Newtonian flow at high activity. The mesoscale model captures these trends and provides insight into the role of stress redistribution due to local active deformations. Our findings highlight the potential of internal active driving to tune the mechanical state of amorphous materials without external forcing.
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Submitted 20 May, 2025;
originally announced May 2025.
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Thermal and thermoelectric transport in monolayer h-NbN: Roles of four-phonon scattering and tensile strain
Authors:
Himanshu Murari,
Subhradip Ghosh,
Mukul Kabir,
Ashis Kundu
Abstract:
Unlocking the thermal and thermoelectric potential of 2D materials, we explore the h-NbN monolayer, which lacks mirror symmetry and features a large acoustic-optical phonon gap and quadratic flexural mode. First-principles calculations and the Boltzmann transport formalism reveal a complex interplay of multi-phonon scattering processes, where flexural phonons and four-phonon interactions play a si…
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Unlocking the thermal and thermoelectric potential of 2D materials, we explore the h-NbN monolayer, which lacks mirror symmetry and features a large acoustic-optical phonon gap and quadratic flexural mode. First-principles calculations and the Boltzmann transport formalism reveal a complex interplay of multi-phonon scattering processes, where flexural phonons and four-phonon interactions play a significant role in heat transport, primarily dominated by acoustic phonons. Notably, the four-phonon interactions are predominantly confined to acoustic phonons. Tensile strain preserves the underlying scattering mechanisms while reducing anharmonicity, consequently, the scattering rates, enhancing thermal conduction. Simultaneously, competing modifications in thermal and electrical transport shape the strain-dependent thermoelectric response, achieving a figure of merit approaching 1 at elevated temperatures, a testament to its thermoelectric promise. Our findings underscore the critical role of microscopic transport modeling in accurately capturing thermal and thermoelectric properties, paving the way for advanced applications of 2D materials.
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Submitted 18 May, 2025;
originally announced May 2025.
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Evidence of chiral fermion edge modes through geometric engineering of thermal Hall in $α$-RuCl$_3$
Authors:
Heda Zhang,
Gabor B. Halasz,
Sujoy Ghosh,
Stephen Jesse,
Thomas Z. Ward,
David Alan Tennant,
Michael McGuire,
Jiaqiang Yan
Abstract:
The experimental observation of half-integer-quantized thermal Hall conductivity in the Kitaev candidate material $α$-RuCl$_3$ has served as smoking-gun signature of non-Abelian anyons through an associated chiral Majorana edge mode. However, both the reproducibility of the quantized thermal Hall conductivity and the fundamental nature of the associated heat carriers, whether bosonic or fermionic,…
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The experimental observation of half-integer-quantized thermal Hall conductivity in the Kitaev candidate material $α$-RuCl$_3$ has served as smoking-gun signature of non-Abelian anyons through an associated chiral Majorana edge mode. However, both the reproducibility of the quantized thermal Hall conductivity and the fundamental nature of the associated heat carriers, whether bosonic or fermionic, are subjects of ongoing and vigorous debate. In a recent theoretical work, it was proposed that varying the sample geometry through creating constrictions can distinguish between different origins of the thermal Hall effect in magnetic insulators. Here, we provide experimental evidence of chiral fermion edge modes by comparing the thermal Hall effect of a geometrically constricted $α$-RuCl$_3$ sample with that of an unconstricted bulk sample. In contrast to the bulk crystals where the thermal Hall signal fades below 5\,K, the constricted crystals display a significant thermal Hall signal that remains measurable even at 2\,K. This sharp difference agrees well with the theoretical prediction and provides compelling evidence for the contribution of chiral fermion edge modes to the thermal Hall effect in $α$-RuCl$_3$. More broadly, this work confirms that the geometry dependence of the thermal Hall effect can help identify chiral spin liquids in candidate materials like $α$-RuCl$_3$ and paves the way for the experimental realization of thermal anyon interferometry.
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Submitted 8 May, 2025;
originally announced May 2025.
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Non-universal Impact of Cholesterol on Ionic Liquid-Membrane Interactions
Authors:
J. Gupta,
V. K. Sharma,
P. Hitaishi,
A. K. Jha,
J. B. Mitra,
H. Srinivasan,
S. Kumar,
A. Kumar,
S. K. Ghosh,
S. Mitra
Abstract:
Understanding the role of cholesterol in ionic liquid (IL)-membrane interactions is essential for advancing biomedical applications of ILs, including the development of innovative antimicrobial agents. In this study, we explore the intricate and multifaceted role of cholesterol in modulating IL-membrane interactions, employing a comprehensive suite of biophysical techniques. We systematically exam…
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Understanding the role of cholesterol in ionic liquid (IL)-membrane interactions is essential for advancing biomedical applications of ILs, including the development of innovative antimicrobial agents. In this study, we explore the intricate and multifaceted role of cholesterol in modulating IL-membrane interactions, employing a comprehensive suite of biophysical techniques. We systematically examine how IL alkyl chain length and membrane physical state influence the impact of cholesterol on IL-lipid membrane interaction. The incorporation of ILs is shown to increase the area per lipid in both pristine dipalmitoylphosphatidylcholine (DPPC) and DPPC-cholesterol membranes. Cholesterol modulates the impact of ILs on lipid conformation, membrane viscoelasticity, and phase behavior. Small-angle neutron scattering and dynamic light scattering measurements reveal that cholesterol mitigates IL-induced structural perturbations in vesicles. Our isothermal titration calorimetry measurements reveal that the presence of cholesterol significantly weakens the binding of ILs to membranes. Intriguingly, despite this reduced binding affinity, cholesterol-containing membranes demonstrate enhanced permeabilization. This counterintuitive effect is attributed to cholesterol's ordering of lipid membranes, which increases susceptibility to stress and defects. Our results underscore the complex and non-universal interplay between lipid composition, IL alkyl chain length, and membrane phase state. These insights provide a deeper understanding of cholesterol's role in IL-membrane interactions, paving the way for the design of advanced applications of ILs in antimicrobial therapy and drug delivery.
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Submitted 23 May, 2025; v1 submitted 2 May, 2025;
originally announced May 2025.
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Altermagnetic band splitting in 10 nm epitaxial CrSb thin films
Authors:
Sandra Santhosh,
Paul Corbae,
Wilson J. Yanez-Parreno,
Supriya Ghosh,
Christopher J. Jensen,
Alexei V. Fedorov,
Makoto Hashimoto,
Donghui Lu,
Julie A. Borchers,
Alexander J. Grutter,
Timothy R. Charlton,
Saurav Islam,
Anthony Richardella,
K. Andre Mkhoyan,
Christopher J. Palmstrøm,
Yongxi Ou,
Nitin Samarth
Abstract:
Altermagnets are a newly identified family of collinear antiferromagnets with momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Neel transition temperature of around 700 K.…
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Altermagnets are a newly identified family of collinear antiferromagnets with momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Neel transition temperature of around 700 K. We use molecular beam epitaxy to synthesize CrSb (0001) thin films with thicknesses ranging from 10 nm to 100 nm. Structural characterization, using reflection high energy electron diffraction, scanning transmission electron microscopy, and X-ray diffraction, demonstrates the growth of epitaxial films with good crystallinity. Polarized neutron reflectometry shows the absence of any net magnetization, consistent with antiferromagnetic order. In vacuo angle resolved photoemission spectroscopy (ARPES) measurements probe the band structure in a previously unexplored regime of film thickness, down to 10 nm. These ARPES measurements show a three-dimensional momentum-dependent band splitting of up to 0.7 eV with g-wave symmetry, consistent with that seen in prior studies of bulk single crystals. The distinct altermagnetic band structure required for potential spin-transport applications survives down to the 10 nm thin film limit at room temperature.
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Submitted 12 May, 2025; v1 submitted 30 April, 2025;
originally announced May 2025.
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A Quieter State of Charge -- Ultra-Low-Noise Collective Current in Charge-Density-Wave Nanowires
Authors:
Subhajit Ghosh,
Nicholas Sesing,
Tina Salguero,
Sergey Rumyantsev,
Roger K. Lake,
Alexander A. Balandin
Abstract:
In quasi-one-dimensional (quasi-1D) charge-density-wave (CDW) systems, electric current comprises normal electrons and a collective, electron-lattice condensate current associated with CDW sliding. While achieving the dissipation-less Frohlich current of the sliding condensate is impossible in real materials, one can imagine an important related target, namely reaching the electron transport regim…
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In quasi-one-dimensional (quasi-1D) charge-density-wave (CDW) systems, electric current comprises normal electrons and a collective, electron-lattice condensate current associated with CDW sliding. While achieving the dissipation-less Frohlich current of the sliding condensate is impossible in real materials, one can imagine an important related target, namely reaching the electron transport regime where electronic noise is inhibited due to the collective, strongly-correlated nature of the electron-lattice condensate current. Here we report that in nanowires of the fully-gapped CDW material (TaSe4)2I, low-frequency electronic noise is suppressed below the limit of thermalized charge carriers in passive resistors. When the current is dominated by the sliding Frohlich condensate, the normalized noise spectral density decreases linearly with current -- a striking departure from the constant value observed in conventional conductors. This discovery signals intrinsically lower current fluctuations within a correlated transport regime. The dominant noise source due to fluctuations in the CDW depinning threshold is extrinsic and caused by lattice imperfections that locally pin the condensate. Once the bias voltage is well past threshold and the sliding mode is established, the normalized noise drops below the noise of normal electrons. No residual minimum noise level is observed for the current of the condensate. Since flicker noise limits phase stability in communication systems, reduces the sensitivity and selectivity of sensors, and degrades coherence in quantum devices, our discovery introduces a fundamentally new strategy for achieving ultra-low-noise performance in nanoscale and quantum electronics using strongly correlated materials.
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Submitted 29 April, 2025;
originally announced April 2025.
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Role of On-site and Inter-site Coulomb Interactions in KV$_3$Sb$_5$: A first-principles DFT+$U$+$V$ study
Authors:
Indukuru Ramesh Reddy,
Sayandeep Ghosh,
Bongjae Kim,
Chang-Jong Kang
Abstract:
Nonlocal Coulomb interactions play a crucial role in stabilizing distinct electronic phases in kagome materials. In this work, we systematically investigate the effects of on-site ($U$) and inter-site ($V$) Coulomb interactions on the electronic structure and stability of charge-density-wave (CDW) phases in the kagome metal KV$_3$Sb$_5$ using density functional theory (DFT+$U$+$V$) calculations. W…
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Nonlocal Coulomb interactions play a crucial role in stabilizing distinct electronic phases in kagome materials. In this work, we systematically investigate the effects of on-site ($U$) and inter-site ($V$) Coulomb interactions on the electronic structure and stability of charge-density-wave (CDW) phases in the kagome metal KV$_3$Sb$_5$ using density functional theory (DFT+$U$+$V$) calculations. We demonstrate that $V$ promotes the formation and stability of CDW phases, whereas $U$ suppresses these phases, highlighting a fundamental competition between local and nonlocal electronic correlations. By directly comparing our theoretical results with angle-resolved photoemission spectroscopy (ARPES) data, we identify realistic values of $U$ and $V$ that accurately describe the electronic band structure of KV$_3$Sb$_5$. Our findings establish a detailed $U$-$V$ phase diagram for KV$_3$Sb$_5$, offering valuable insights into the correlated electronic states in kagome metals and serving as a foundation for future explorations of correlation-driven phenomena in related materials.
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Submitted 24 April, 2025;
originally announced April 2025.
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Strain engineering of doped hydrogen passivated silicon quantum dots
Authors:
Swarnava Ghosh,
Markus Eisenbach
Abstract:
Silicon quantum dots are nanomaterials that are attractive candidates for photovoltaic applications. Doping of these materials creates p-n junctions and is important for solar cells. In this work, we present a first-principles study of the coupled influence of doping and strain on the stability, energy gap, Fermi level, electronic density, and density of states of hydrogen-passivated silicon quant…
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Silicon quantum dots are nanomaterials that are attractive candidates for photovoltaic applications. Doping of these materials creates p-n junctions and is important for solar cells. In this work, we present a first-principles study of the coupled influence of doping and strain on the stability, energy gap, Fermi level, electronic density, and density of states of hydrogen-passivated silicon quantum dots. We find that the cohesive energy and the energy gap decrease with increasing quantum dot size and are strongly influenced by strain. Furthermore, the response to strain also depends on the size of the quantum dot and dopant type. We present expressions of cohesive energy and energy gap as power-law of size and polynomial dependence on strain. We also show that the Fermi energy increases with size for pristine and p-type doping but decreases with size for n-type doping. We also discuss the influence of strain and dopant type on the density of states and electron density of the quantum dots.
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Submitted 21 April, 2025;
originally announced April 2025.
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Accelerated Collapse Kinetics of Charged Polymers in Good Solvent: Role of Counterion Condensation
Authors:
Susmita Ghosh,
Satyavani Vemparala
Abstract:
We investigate the collapse kinetics of charged polymers (polyelectrolytes) induced by counterion condensation using coarse-grained molecular dynamics simulations. Under good solvent conditions, polyelectrolytes above the critical charge density ($A > A_c$) exhibit significantly faster collapse dynamics compared to neutral polymers, with dynamic scaling exponents ($ν_c \approx 0.76-0.84$) distinct…
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We investigate the collapse kinetics of charged polymers (polyelectrolytes) induced by counterion condensation using coarse-grained molecular dynamics simulations. Under good solvent conditions, polyelectrolytes above the critical charge density ($A > A_c$) exhibit significantly faster collapse dynamics compared to neutral polymers, with dynamic scaling exponents ($ν_c \approx 0.76-0.84$) distinctly smaller than those observed for neutral polymers ($ν_c \approx 1.44$) . This accelerated collapse is driven primarily by three mechanisms: (1) local charge neutralization due to counterion condensation, which facilitates immediate local compaction, (2) screening of long-range electrostatic repulsions, reducing the conformational search space, and (3) bridging interactions mediated by multivalent counterions, enhancing efficient formation of intra-chain contacts. We systematically explore the effects of polymer length, charge density, and counterion valency (monovalent, divalent, and trivalent) on collapse dynamics, demonstrating that increased counterion valency significantly lowers the critical charge density required for collapse and accelerates the collapse process. Our findings highlight the limitations of modeling charged biopolymers using purely neutral coarse-grained models, underscoring the importance of electrostatic interactions and counterion dynamics in determining their kinetic pathways. These insights may aid in better understanding the folding, organization, and dynamics of inherently charged biomolecules, such as proteins and nucleic acids.
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Submitted 17 April, 2025;
originally announced April 2025.
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Nanoscale Quantum Imaging of Spin Dynamics using a Hybrid 2D/3D System
Authors:
Alex L. Melendez,
Ruotian Gong,
Guanghui He,
Yan Wang,
Yueh-Chun Wu,
Thomas Poirier,
Steven Randolph,
Sujoy Ghosh,
Liangbo Liang,
Stephen Jesse,
An-Ping Li,
Joshua T. Damron,
Benjamin J. Lawrie,
James H. Edgar,
Ivan V. Vlassiouk,
Chong Zu,
Huan Zhao
Abstract:
Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and compatibility with quantum networks. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy to discover, read out, and spatially map arbitrary spin-based quantum sensors at the nanoscale. Using the boron vacancy (V$_\mathrm{B}^-$) center…
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Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and compatibility with quantum networks. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy to discover, read out, and spatially map arbitrary spin-based quantum sensors at the nanoscale. Using the boron vacancy (V$_\mathrm{B}^-$) center in hexagonal boron nitride$\unicode{x2013}$an emerging two-dimensional spin system$\unicode{x2013}$as a model, we detect its electron spin resonance indirectly via changes in the spin relaxation time ($T_1$) of a nearby NV center, eliminating the need for optical excitation or fluorescence detection of the V$_\mathrm{B}^-$. Cross-relaxation between NV and V$_\mathrm{B}^-$ ensembles significantly reduces NV $T_1$, enabling quantitative nanoscale mapping of defect densities beyond the optical diffraction limit and clear resolution of hyperfine splitting in isotopically enriched h$^{10}$B$^{15}$N. Our method demonstrates interactions between 3D and 2D spin sensors, establishing NV centers as versatile probes for characterizing otherwise inaccessible spin defects.
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Submitted 8 June, 2025; v1 submitted 13 April, 2025;
originally announced April 2025.
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Interplay between trimer structure and magnetic ground state in Ba5Ru3O12 probed by Neutron and muSR techniques
Authors:
E. Kushwaha,
S. Ghosh,
J. Sannigrahi,
G. Roy,
M. Kumar,
S. Cottrell,
M. B. Stone,
Y. Fang,
D. T. Adroja,
X. Ke,
T. Basu
Abstract:
We report a detailed inelastic neutron scattering (INS) and muon spin relaxation (muSR) investigations of a trimer Ruthenate Ba5Ru3O12 system, which undergoes long-range antiferromagnetic ordering at TN = 60 K. The INS reveals two distinct spin-wave excitations below TN : one around 5.6 meV and the other at 10 to 15 meV. The coexistence of such excitations at both low and high momentum transfer re…
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We report a detailed inelastic neutron scattering (INS) and muon spin relaxation (muSR) investigations of a trimer Ruthenate Ba5Ru3O12 system, which undergoes long-range antiferromagnetic ordering at TN = 60 K. The INS reveals two distinct spin-wave excitations below TN : one around 5.6 meV and the other at 10 to 15 meV. The coexistence of such excitations at both low and high momentum transfer regions is speculated to be strong electronic correlation and spin-phonon coupling of Ruthenium. By accompanying the INS spectra based on a linear spin wave theory using SpinW software, we show that Ba5Ru3O12 exhibits spin frustration due to competing exchange interactions between neighboring and next-neighboring Ru-moments, exchange anisotropy and strong spin-orbit coupling, which yields a non-collinear spin structure, in contrast to other ruthenate trimers in this series. Interestingly, these magnetic excitations does not completely vanish even at high temperatures above TN , evidencing short-range magnetic correlations in this trimer system. This is further supported by muSR spectroscopy, which exhibits a gradual drop in the initial asymmetry around the magnetic phase transition and is further verified through maximum entropy analysis. The results of muSR spectroscopy indicates a dynamic nature of magnetic order, attributed to local magnetic anisotropy within the trimer as a result of local structural distortion and different hybridization, consistent with canted spin-structure. We predict the ground state of Ru3O12-isolated trimer through theoretical calculations which agree with the experimentally observed spin excitation.
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Submitted 8 April, 2025;
originally announced April 2025.
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Topological Hall effect in ferromagnetic Weyl semimetal Mn$_5$Ge$_3$ originating in competing dipolar interaction and magnetocrystalline anisotropy
Authors:
Achintya Low,
Tushar Kanti Bhowmik,
Susanta Ghosh,
Susmita Changdar,
Setti Thirupathaiah
Abstract:
We report the anomalous and topological Hall effect of the ferromagnetic Weyl semimetal Mn$_5$Ge$_3$. We observe a significant anisotropic anomalous Hall effect (AHE) due to nonzero Berry curvature in the momentum space, such that the anomalous Hall conductivity (AHC) is 965 S/cm for the $xy$-plane and 233 S/cm for the $zx$-plane of the single crystal. The band structure calculations predict sever…
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We report the anomalous and topological Hall effect of the ferromagnetic Weyl semimetal Mn$_5$Ge$_3$. We observe a significant anisotropic anomalous Hall effect (AHE) due to nonzero Berry curvature in the momentum space, such that the anomalous Hall conductivity (AHC) is 965 S/cm for the $xy$-plane and 233 S/cm for the $zx$-plane of the single crystal. The band structure calculations predict several Weyl and nodal points span across the momentum space, gapped out under the spin-orbit coupling effect, leading to significant $k$-space Berry curvature and large AHC. Experimentally, we also demonstrate a sizeable topological Hall effect that is originated by the non-coplanar chiral spin structure due to the competition between the out-of-plane uniaxial magnetocrystalline anisotropy and the dipole-dipole interaction between two Mn sublattices. This study hints at the importance of dipole-dipole interactions in producing the skyrmion lattice in Mn$_5$Ge$_3$.
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Submitted 7 April, 2025;
originally announced April 2025.
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Raman spectroscopic evidence for linearly dispersed nodes and magnetic ordering in the topological semimetal V$_{1/3}$NbS$_2$
Authors:
Shreenanda Ghosh,
Chris Lygouras,
Zili Feng,
Mingxuan Fu,
Satoru Nakatsuji,
Natalia Drichko
Abstract:
Weyl semimetals are characterized by an electronic structure with linearly dispersed nodes and distinguished chirality, protected by broken inversion or time reversal symmetry. The intercalated transition metal dichalcogenide V$_{1/3}$NbS$_2$ is proposed as a Weyl semimetal. In this study, we report polarization-resolved magnetic and electronic Raman scattering of this material, probing both the m…
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Weyl semimetals are characterized by an electronic structure with linearly dispersed nodes and distinguished chirality, protected by broken inversion or time reversal symmetry. The intercalated transition metal dichalcogenide V$_{1/3}$NbS$_2$ is proposed as a Weyl semimetal. In this study, we report polarization-resolved magnetic and electronic Raman scattering of this material, probing both the magnetic order and the electronic structure. The electronic scattering reveals a linear with frequency continuum of excitations, as the signature of electronic transitions within the proposed Weyl nodes in a two-dimensional electronic structure. Additionally, two-magnon excitations of V moments are observed near 15 meV in the magnetically ordered phase below 50 K. These excitations are well reproduced by calculations based on the Fleury-Loudon theory using spin wave exchange parameters derived from the neutron scattering data of this material and confirm the antiferromagnetic character of the order. These magnetic and electronic scattering, observed in the same spectra, provide independent spectroscopic evidence for a collinear antiferromagnetic Weyl semimetal state in V$_{1/3}$NbS$_2$.
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Submitted 6 April, 2025;
originally announced April 2025.
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Defect Engineering in Large-Scale CVD-Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics
Authors:
Ivan V. Vlassiouk,
Yueh-Chun Wu,
Alexander Puretzky,
Liangbo Liang,
John Lasseter,
Bogdan Dryzhakov,
Ian Gallagher,
Sujoy Ghosh,
Nickolay Lavrik,
Ondrej Dyck,
Andrew R. Lupini,
Marti Checa,
Liam Collins,
Huan Zhao,
Farzana Likhi,
Kai Xiao,
Ilia Ivanov,
David Glasgow,
Alexander Tselev,
Benjamin Lawrie,
Sergei Smirnov,
Steven Randolph
Abstract:
Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation of desirable defect types in scalable hBN films remains a significant challenge. Here, we demonstrate that formation of negative boron vacancy defects, VB-, in…
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Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation of desirable defect types in scalable hBN films remains a significant challenge. Here, we demonstrate that formation of negative boron vacancy defects, VB-, in suspended, large-area CVD-grown hBN is strongly dependent on the type of bombarding particles (ions, neutrons, and electrons) and irradiation conditions. In contrast to suspended hBN, defect formation in substrate-supported hBN is more complex due to the uncontrollable generation of secondary particles from the substrate, and the outcome strongly depends on the thickness of the hBN. We identify different defect types by correlating spectroscopic and optically detected magnetic resonance features, distinguishing boron vacancies (formed by light ions and neutrons) from other optically active defects emitting at 650 nm assigned to anti-site nitrogen vacancy (NBVN) and reveal the presence of additional dark paramagnetic defects that influence spin-lattice relaxation time (T1) and zero-field splitting parameters, all of which strongly depend on the defect density. These results underscore the potential for precisely engineered defect formation in large-scale CVD-grown hBN, paving the way for the scalable fabrication of quantum photonic devices.
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Submitted 28 March, 2025; v1 submitted 24 March, 2025;
originally announced March 2025.
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Graphene Straintronics by Molecular Trapping
Authors:
Pawan Kumar Srivastava,
Vedanki Khandelwal,
Ramesh Reddy,
Kartick Tarafder,
Subhasis Ghosh
Abstract:
Here, we report on controlling strain in graphene by trapping molecules at the graphene-substrate interface, leveraging molecular dipole moments. Spectroscopic and transport measurements show that strain correlates with the dipole moments of trapped molecules, with a dipole range of 1.5 D to 4.9 D resulting in a 50-fold increase in strain and a substantial rise in the residual carrier density. Thi…
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Here, we report on controlling strain in graphene by trapping molecules at the graphene-substrate interface, leveraging molecular dipole moments. Spectroscopic and transport measurements show that strain correlates with the dipole moments of trapped molecules, with a dipole range of 1.5 D to 4.9 D resulting in a 50-fold increase in strain and a substantial rise in the residual carrier density. This has been possible by charge transfer between graphene and trapped molecules, altering the C=C bond length, and causing biaxial strain. First-principles density functional theory calculations confirm a consistent dependence of bending height on molecular dipole moments.
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Submitted 21 March, 2025;
originally announced March 2025.
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Gate and Carriers tunable Valley Imbalance in Topological Proximitized Rhombohedral Trilayer Graphene
Authors:
Sovan Ghosh,
Bheema Lingam Chittari
Abstract:
We investigated the electronic structure, Fermi surface topology and the emergence of valley imbalance in rhombohedral trilayer graphene (RTG) induced by the topological proximity and the electric fields. We show that, a strong proximity strength isolates the unperturbed low energy bands at the charge neutrality and the isolated topological bands show metallic nature under the influence of applied…
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We investigated the electronic structure, Fermi surface topology and the emergence of valley imbalance in rhombohedral trilayer graphene (RTG) induced by the topological proximity and the electric fields. We show that, a strong proximity strength isolates the unperturbed low energy bands at the charge neutrality and the isolated topological bands show metallic nature under the influence of applied electric fields. Our calculations indicate that valley-resolved metallic states with a finite Chern number $|C| =$3 can appear near charge neutrality for appropriate electric fields and second-nearest-neighbor strengths. The Fermi surface topology of these metallic bands greatly influenced by the applied electric fields and carrier doping. The valley imbalance lead to the dominant carriers of either $e^-$ or $h^+$ Fermi surface pockets and the choice of carriers is subjected to the direction of electric fields. The gate-tunable and carrier-induced valley imbalance in topologically proximated rhombohedral trilayer graphene may have potential applications toward the realization of superconductivity.
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Submitted 21 March, 2025;
originally announced March 2025.
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Wettability and sp2/sp3 ratio effects on supercapacitor performance of N-doped hydrogenated amorphous Carbon Nanofoam
Authors:
Subrata Ghosh,
Giacomo Pagani,
Andrea Macrelli,
Alberto Calloni,
Gianlorenzo Bussetti,
Andrea Lucotti,
Matteo Tommasini,
Raffaella Suriano,
Valeria Russo,
Agnieszka M. Jastrzkebska,
Cinzia Casiraghi,
Andrea Li Bassi,
Carlo S. Casari
Abstract:
Pulsed laser-deposited amorphous carbon nanofoams could be a potential candidate for electrochemical energy storage applications due to their properties such as ultralightweight, huge volumetric void fractions, and co-existence of sp, sp2 and sp3 carbon hybridization. It is known that the charge-storage of carbon nanostructures containing disordered sp2-domains is determined by the wettability, su…
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Pulsed laser-deposited amorphous carbon nanofoams could be a potential candidate for electrochemical energy storage applications due to their properties such as ultralightweight, huge volumetric void fractions, and co-existence of sp, sp2 and sp3 carbon hybridization. It is known that the charge-storage of carbon nanostructures containing disordered sp2-domains is determined by the wettability, surface area, and porosity of carbon nanostructures. However, their charge-storage performance is limited to the areal capacitance of the order of a few mF/cm2. We enhanced the supercapacitor performance of nitrogen-doped amorphous carbon nanofoam by engineering its wettability and sp2-C/sp3-C ratio by vacuum annealing. The specific capacitance was enhanced around fifty times and the widened voltage of the device increased from 0.8 to 1.1 V compared to as-grown nanofoam. In addition, we examined for the first time the initial increase in specific capacitance of the aqueous symmetric supercapacitor with respect to the scan rate, employing in-situ measurements coupling Raman spectroscopy and electrochemistry. We attribute this effect, although observed in previous literatures but unexplained, to the electrochemical activation induced by structural changes during the charge storage performance. This optimization of pulsed laser-deposited carbon nanofoam may open an avenue for fabricating lightweight and porous nanostructures for advanced macro-to-micro-supercapacitor devices.
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Submitted 17 March, 2025;
originally announced March 2025.
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Integrated Experiment and Simulation Co-Design: A Key Infrastructure for Predictive Mesoscale Materials Modeling
Authors:
Shailendra P. Joshi,
Ashley Bucsek,
Darren C. Pagan,
Samantha Daly,
Suraj Ravindran,
Jaime Marian,
Miguel A. Bessa,
Surya R. Kalidindi,
Nikhil C. Admal,
Celia Reina,
Somnath Ghosh,
Jorge Vinals,
Ellad B. Tadmor
Abstract:
The design of structural & functional materials for specialized applications is being fueled by rapid advancements in materials synthesis, characterization, manufacturing, with sophisticated computational materials modeling frameworks that span a wide spectrum of length & time scales in the mesoscale between atomistic & continuum approaches. This is leading towards a systems-based design methodolo…
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The design of structural & functional materials for specialized applications is being fueled by rapid advancements in materials synthesis, characterization, manufacturing, with sophisticated computational materials modeling frameworks that span a wide spectrum of length & time scales in the mesoscale between atomistic & continuum approaches. This is leading towards a systems-based design methodology that will replace traditional empirical approaches, embracing the principles of the Materials Genome Initiative. However, several gaps remain in this framework as it relates to advanced structural materials:(1) limited availability & access to high-fidelity experimental & computational datasets, (2) lack of co-design of experiments & simulation aimed at computational model validation,(3) lack of on-demand access to verified and validated codes for simulation and for experimental analyses, & (4) limited opportunities for workforce training and educational outreach. These shortcomings stifle major innovations in structural materials design. This paper describes plans for a community-driven research initiative that addresses current gaps based on best-practice recommendations of leaders in mesoscale modeling, experimentation & cyberinfrastructure obtained at an NSF-sponsored workshop dedicated to this topic. The proposal is to create a hub for Mesoscale Experimentation and Simulation co-Operation (hMESO)-that will (I) provide curation and sharing of models, data, & codes, (II) foster co-design of experiments for model validation with systematic uncertainty quantification, & (III) provide a platform for education & workforce development. It will engage experimental & computational experts in mesoscale mechanics and plasticity, along with mathematicians and computer scientists with expertise in algorithms, data science, machine learning, & large-scale cyberinfrastructure initiatives.
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Submitted 12 March, 2025;
originally announced March 2025.
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Negative Local Partial Density of States
Authors:
Kanchan Meena,
Souvik Ghosh,
P. Singha Deo
Abstract:
Real quantum systems can exhibit a local object called local partial density of states (LPDOS) that cannot be proved within the axiomatic approach of quantum mechanics. We demonstrate that real mesoscopic system that can exhibit Fano resonances will show this object and also very counterintuitively it can become negative, resulting in the enhancement of coherent currents.
Real quantum systems can exhibit a local object called local partial density of states (LPDOS) that cannot be proved within the axiomatic approach of quantum mechanics. We demonstrate that real mesoscopic system that can exhibit Fano resonances will show this object and also very counterintuitively it can become negative, resulting in the enhancement of coherent currents.
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Submitted 11 March, 2025; v1 submitted 10 March, 2025;
originally announced March 2025.
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Multipolar Fermi Surface Deformations in Sr$_2$RuO$_4$ Probed by Resistivity and Sound Attenuation: A Window into Electron Viscosity and the Collision Operator
Authors:
Davis Thuillier,
Sayak Ghosh,
B. J. Ramshaw,
Thomas Scaffidi
Abstract:
Recent developments in electron hydrodynamics have demonstrated the importance of considering the full structure of the electron-electron scattering operator, which encodes a sequence of lifetimes, one for each component of the Fermi surface deformation in a multipolar expansion. In this context, the dipolar lifetime is measured by resistivity, whereas the quadrupolar component probes the viscosit…
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Recent developments in electron hydrodynamics have demonstrated the importance of considering the full structure of the electron-electron scattering operator, which encodes a sequence of lifetimes, one for each component of the Fermi surface deformation in a multipolar expansion. In this context, the dipolar lifetime is measured by resistivity, whereas the quadrupolar component probes the viscosity and can be measured in the bulk via sound attenuation. We introduce a framework to extract the collision operator of an arbitrary metal by combining resistivity and sound attenuation measurements with a realistic calculation of the scattering operator that includes multiband and Umklapp effects. The collision operator allows for the prediction of a plethora of properties, including the non-local conductivity, and can be used to predict hydrodynamic behavior for bulk metals. As a first application, we apply this framework to Sr$_2$RuO$_4$ in a temperature range where electron-electron scattering is dominant. We find quantitative agreement between our model and the temperature dependence of both the resistivity and the sound attenuation, we extract the ratio of the quadrupolar (B1g) to dipolar relaxation rate to be 1.3, and we predict a strongly anisotropic non-local conductivity arising from the $α$ and $β$ bands.
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Submitted 6 March, 2025;
originally announced March 2025.
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Harnessing Layer-Controlled Two-dimensional Semiconductors for Photoelectrochemical Energy Storage via Quantum Capacitance and Band Nesting
Authors:
Praveen Kumar,
Tushar Waghmare,
Sudhir Kumar,
Rajdeep Banerjee,
Suman Kumar Chakraborty,
Subrata Ghosh,
Dipak Kumar Goswami,
Sankha Mukherjee,
Debabrata Pradhan,
Prasana Kumar Sahoo
Abstract:
Two-dimensional (2D) transition metal dichalcogenides like molybdenum diselenide (MoSe$_2$) have shown great potential in optoelectronics and energy storage due to their layer-dependent bandgap. However, producing high-quality 2D MoSe$_2$ layers in a scalable and controlled manner remains challenging. Traditional methods, such as hydrothermal and liquid-phase exfoliation, lack precision and unders…
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Two-dimensional (2D) transition metal dichalcogenides like molybdenum diselenide (MoSe$_2$) have shown great potential in optoelectronics and energy storage due to their layer-dependent bandgap. However, producing high-quality 2D MoSe$_2$ layers in a scalable and controlled manner remains challenging. Traditional methods, such as hydrothermal and liquid-phase exfoliation, lack precision and understanding at the nanoscale, limiting further applications. Atmospheric pressure chemical vapor deposition (APCVD) offers a scalable solution for growing high-quality, large-area, layer-controlled 2D MoSe$_2$. Despite this, the photoelectrochemical performance of APCVD-grown 2D MoSe$_2$, particularly in energy storage, has not been extensively explored. This study addresses this by examining MoSe$_2$'s layer-dependent quantum capacitance and photo-induced charge storage properties. Using a three-electrode setup in 0.5M H$_2$SO$_4$, we observed a layer-dependent increase in areal capacitance under both dark and illuminated conditions. A six-layer MoSe$_2$ film exhibited the highest capacitance, reaching $96 μ\mathrm{F/cm^2}$ in the dark and $115 μ\mathrm{F/cm^2}$ under illumination at a current density of $5 μ\mathrm{A/cm^2}$. Density Functional Theory (DFT) and Many-Body Perturbation Theory calculations reveal that Van Hove singularities and band nesting significantly enhance optical absorption and quantum capacitance. These results highlight APCVD-grown 2D MoSe$_2$'s potential as light-responsive, high-performance energy storage electrodes, paving the way for innovative energy storage systems.
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Submitted 27 February, 2025;
originally announced February 2025.
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Emergent fractals in hBN-encapsulated graphene based supermoiré structures and their experimental signatures
Authors:
Deepanshu Aggarwal,
Rohit Narula,
Sankalpa Ghosh
Abstract:
Supermoiré structures (SMS), formed by overlapping moiré-patterns in van der Waals heterostructures, display complex behaviour that lacks a comprehensive low-energy theoretical description. We demonstrate that these structures can form emergent fractals under specific conditions and identify the parameter space where this occurs in hexagonal trilateral SMS. This fractality enables a reliable calcu…
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Supermoiré structures (SMS), formed by overlapping moiré-patterns in van der Waals heterostructures, display complex behaviour that lacks a comprehensive low-energy theoretical description. We demonstrate that these structures can form emergent fractals under specific conditions and identify the parameter space where this occurs in hexagonal trilateral SMS. This fractality enables a reliable calculation of low-energy band counts, which are crucial for understanding both single-particle and correlation effects. Using an effective Hamiltonian that includes in- and out-of-plane lattice relaxation, we analyze SMS in hBN-encapsulated single and bilayer graphene. We prescribe methods to experimentally verify these fractals and extract their fractal dimension through angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM).
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Submitted 26 February, 2025;
originally announced February 2025.
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Inherited Berry curvature of phonons in Dirac materials with time-reversal symmetry
Authors:
Sayandip Ghosh,
Selçuk Parlak,
Ion Garate
Abstract:
The Berry curvature of phonons is an active subject of research in condensed matter physics. Here, we present a model in which phonons acquire a Berry curvature through their coupling to electrons in crystals with time-reversal symmetry. We illustrate this effect for BaMnSb$_2$, a quasi two-dimensional Dirac insulator, whose low-energy massive Dirac fermions generate a phonon Berry curvature that…
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The Berry curvature of phonons is an active subject of research in condensed matter physics. Here, we present a model in which phonons acquire a Berry curvature through their coupling to electrons in crystals with time-reversal symmetry. We illustrate this effect for BaMnSb$_2$, a quasi two-dimensional Dirac insulator, whose low-energy massive Dirac fermions generate a phonon Berry curvature that is proportional to the electronic valley Chern number.
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Submitted 19 February, 2025;
originally announced February 2025.
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Angle-dependent dissipation effects in topological insulator-based Josephson junctions
Authors:
Ardamon Sten,
Paramita Dutta,
Sudeep Kumar Ghosh
Abstract:
Dissipation fundamentally alters quantum transport in Josephson junctions. Here, we demonstrate unique transport signatures in dissipative topological insulator-based Josephson junctions, which provide a powerful platform for exploring the competition between dissipation and topological protection. We incorporate dissipation effects by coupling a `lossy' metallic lead at the junction to an electro…
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Dissipation fundamentally alters quantum transport in Josephson junctions. Here, we demonstrate unique transport signatures in dissipative topological insulator-based Josephson junctions, which provide a powerful platform for exploring the competition between dissipation and topological protection. We incorporate dissipation effects by coupling a `lossy' metallic lead at the junction to an electron reservoir, and describe its effects using an effective non-Hermitian Hamiltonian within the Lindblad formalism. Non-Hermiticity introduces finite lifetimes to the helical Andreev bound states in the junction, with imaginary energy components that depend on the quasiparticle incidence angle, while Klein tunneling remains robust for normal incidence. Unlike `ordinary' non-Hermitian Josephson junctions, this system exhibits no Josephson gaps or forbidden regions, preserving topological protection. In the fully non-Hermitian regime, a tunable line of zero-energy states emerges, bounded by exceptional-like points with divergent supercurrents. Our results reveal how dissipation reshapes superconducting transport in topological insulator-based Josephson junctions, opening new directions for dissipation-engineered hybrid quantum devices.
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Submitted 13 February, 2025;
originally announced February 2025.
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Topological superconductivity in hourglass Dirac chain metals (Ti, Hf)IrGe
Authors:
Pavan Kumar Meena,
Dibyendu Samanta,
Sonika Jangid,
Roshan Kumar Kushwaha,
Rhea Stewart,
Adrian D. Hillier,
Sudeep Kumar Ghosh,
Ravi Prakash Singh
Abstract:
Realizing topological superconductivity in stoichiometric materials is a key challenge in condensed matter physics. Here, we report the discovery of ternary germanide superconductors, $M$IrGe ($M$ = Ti, Hf), as prime candidates for topological superconductivity, predicted to exhibit nonsymmorphic symmetry-protected hourglass Dirac chains. Using comprehensive thermodynamic and muon-spin rotation/re…
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Realizing topological superconductivity in stoichiometric materials is a key challenge in condensed matter physics. Here, we report the discovery of ternary germanide superconductors, $M$IrGe ($M$ = Ti, Hf), as prime candidates for topological superconductivity, predicted to exhibit nonsymmorphic symmetry-protected hourglass Dirac chains. Using comprehensive thermodynamic and muon-spin rotation/relaxation ($μ$SR) measurements, we establish these materials as conventional bulk type-II superconductors with transition temperatures of 2.24(5) K for TiIrGe and 5.64(4) K for HfIrGe, featuring a full gap and preserved time-reversal symmetry. First-principles calculations reveal striking topological features in $M$IrGe, including hourglass-shaped bulk dispersions and a Dirac chain -- a ring of fourfold-degenerate Dirac points protected by nonsymmorphic symmetry. Each Dirac point corresponds to the neck of the hourglass dispersion, while the Dirac chain gives rise to drumhead-like surface states near the Fermi level. Additionally, nontrivial $\mathbb{Z}_2$ topology leads to isolated Dirac surface states with helical spin textures that disperse across the Fermi level, forming an ideal platform for proximity-induced topological superconductivity. The coexistence of conventional bulk superconductivity, symmetry-protected hourglass topology, and helical spin-textured surface states establishes $M$IrGe as a rare and robust platform to realize topological superconductivity, opening new avenues for next-generation quantum technologies.
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Submitted 11 February, 2025;
originally announced February 2025.
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Quantifying Ionic Liquid Affinity and Its Effect on Phospholipid Membrane Structure and Dynamics
Authors:
V. K. Sharma,
J. Gupta,
H. Srinivasan,
P. Hitaishi,
S. K. Ghosh,
S. Mitra
Abstract:
In this study, we examine the impact of imidazolium based ILs on the viscoelasticity, dynamics, and phase behavior of two model membrane systems, (i) lipid monolayers and (ii) unilamellar vesicles composed of dipalmitoylphosphatidylcholine (DPPC). Our findings demonstrate that both ILs induce significant disorder in lipid membranes by altering the area per lipid molecule, thereby modulating their…
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In this study, we examine the impact of imidazolium based ILs on the viscoelasticity, dynamics, and phase behavior of two model membrane systems, (i) lipid monolayers and (ii) unilamellar vesicles composed of dipalmitoylphosphatidylcholine (DPPC). Our findings demonstrate that both ILs induce significant disorder in lipid membranes by altering the area per lipid molecule, thereby modulating their viscoelastic properties. ILs with longer alkyl chains show stronger interactions with membranes, causing more pronounced disorder. Fourier transform infrared spectroscopy indicates that IL incorporation shifts the membrane main phase transition to lower temperatures and introduces gauche defects, signifying increased structural disorder. This effect is amplified with longer alkyl chains and higher IL concentrations. Quasielastic neutron scattering studies highlight that ILs markedly enhance the lateral diffusion of lipids within the membrane leaflet, with the extent of enhancement determined by the membrane physical state, IL concentration, and alkyl chain length. The most pronounced acceleration in lateral diffusion occurs in ordered membrane phase with higher concentrations of the longer chain IL. Molecular dynamics simulations corroborate these experimental findings, showing that longer chain ILs extensively disrupt lipid organization, introduce more gauche defects, increase the area per lipid, and consequently enhance lateral diffusion. This increase in lipid fluidity and permeability provides a mechanistic basis for the observed higher toxicity associated with longer chain ILs.
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Submitted 7 February, 2025; v1 submitted 6 February, 2025;
originally announced February 2025.
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Unusual magnetic order, field induced melting and role of spin-lattice coupling in 2D Van der Waals materials: a case study of CrSiTe3
Authors:
Smita Gohil,
Saswata Halder,
Karthik K Iyer,
Shankar Ghosh,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
Two-dimensional (2D) Van der Waals compounds exhibit interesting electronic and magnetic properties due to complex intra-layer and inter-layer interactions, which are of immense importance in realizing exotic physics as well as advanced technology. Various experimental and theoretical studies led to significantly different ground state properties often contrasting each other. Here, we studied a no…
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Two-dimensional (2D) Van der Waals compounds exhibit interesting electronic and magnetic properties due to complex intra-layer and inter-layer interactions, which are of immense importance in realizing exotic physics as well as advanced technology. Various experimental and theoretical studies led to significantly different ground state properties often contrasting each other. Here, we studied a novel 2D material, CrSiTe3 employing magnetic, specific heat and Raman measurements. Experimental results reveal evidence of incipient antiferromagnetism below 1 kOe concomitant to ferromagnetic order at 33 K. Antiferromagnetic and ferromagnetic interactions coexists at low field in the temperature regime, 15 - 33 K. Low field data reveal an additional magnetic order below 15 K, which melts on application of external magnetic field and remain dark in the heat capacity data. Raman spectra exhibit anomalies at the magnetic transitions; an evidence of strong spin-lattice coupling. Below 15 K, Eg modes exhibit hardening while Ag modes become significantly softer suggesting weakening of the inter-layer coupling at low temperatures which might be a reason for the unusual magnetic ground state and field induced melting of the magnetic order. These results reveal evidence of exceptional ground state properties linked to spin-lattice coupling and also suggest a pathway to study complex magnetism in such technologically important materials.
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Submitted 21 January, 2025;
originally announced January 2025.
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Hamiltonian $k$-Locality is the Key Resource for Powerful Quantum Battery Charging
Authors:
Anupam Sarkar,
Sibasish Ghosh
Abstract:
Storing and extracting energy using quantum degrees of freedom is a promising approach to leveraging quantum effects in energy science. Early experimental efforts have already demonstrated its potential to surpass the charging power of existing technologies. In this context, it is crucial to identify the specific quantum effects that can be exploited to design the most efficient quantum batteries…
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Storing and extracting energy using quantum degrees of freedom is a promising approach to leveraging quantum effects in energy science. Early experimental efforts have already demonstrated its potential to surpass the charging power of existing technologies. In this context, it is crucial to identify the specific quantum effects that can be exploited to design the most efficient quantum batteries and push their performance to the ultimate limit. While entanglement has often been considered a key factor in enhancing charging (or discharging) power, our findings reveal that it is not as critical as previously thought. Instead, three parameters emerge as the most significant in determining the upper bound of instantaneous charging power: the locality of the battery and charger Hamiltonians, and the maximum energy storable in a single unit cell of the battery. To derive this new bound, we have also addressed several open questions previously noted in the literature but lacks an explanation. This bound provides a foundation for designing the most powerful charger-battery systems, where combined optimization of both components offers enhancements that cannot be achieved by manipulating only one of them.
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Submitted 21 January, 2025;
originally announced January 2025.
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Edge states and persistent current in a PT-symmetric extended Su-Schrieffer-Heeger model with generic boundary conditions
Authors:
Supriyo Ghosh,
Pijush K. Ghosh,
Shreekantha Sil
Abstract:
We consider a generalization of the Su-Schrieffer-Heeger(SSH) model by including next-nearest neighbour(NNN) interaction and balanced loss-gain(BLG), and subjecting the whole system to an external uniform magnetic field. We study the band structure, edge states and persistent current in this extended SSH model under General Boundary Condition(GBC) of which the periodic, anti-periodic and open boun…
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We consider a generalization of the Su-Schrieffer-Heeger(SSH) model by including next-nearest neighbour(NNN) interaction and balanced loss-gain(BLG), and subjecting the whole system to an external uniform magnetic field. We study the band structure, edge states and persistent current in this extended SSH model under General Boundary Condition(GBC) of which the periodic, anti-periodic and open boundary conditions appear as special cases. It is shown that the point bandgap decreases with the increasing value of the strength of the NNN interaction and vanish beyond a critical value. Further, the line gap exhibits closed-loop like structures for non-vanishing NNN interaction under the Periodic Boundary Condition(PBC). The Zak phase receives no contribution from the NNN interaction under the PBC. We show that the NNN interaction has no effect on the persistent current in the half-filled limit for the case of PBC. We show that the model without the NNN interaction is exactly solvable for a class of GBC of which PBC, anti-periodic boundary condition(APBC) and anti-hermitian boundary condition(AHBC) arise as special cases. We obtain analytic expressions for the edge states in the case of Open Boundary Condition(OBC) and AHBC for vanishing NNN interaction. We show numerically for OBC that edge states in the topologically trivial phase appear for non-vanishing NNN interaction in the parametric regions where PT-symmetry is broken under PBC. In the topologically non-trivial phase, the edge states under OBC exists only up to a critical value of the NNN strength and vanishes beyond a critical value. The bulk-boundary correspondence(BBC) for unbroken PT-phase is similar to hermitian SSH model, while non-Hermitian skin effect(NHSE) is observed for broken PT-phase.
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Submitted 10 June, 2025; v1 submitted 15 January, 2025;
originally announced January 2025.
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Orientation selection in alloy dendritic evolution during melt-pool solidification
Authors:
Saurabh Tiwari,
Supriyo Ghosh
Abstract:
Investigations of directionally solidifying melt pools during metal additive manufacturing (AM) reveal that the resulting subgrain cellular structures often grow along crystalline orientations different from the temperature gradient direction, some of which are not even along preferred crystallographic directions. It is well-known that dendrite orientation results from the growth competition betwe…
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Investigations of directionally solidifying melt pools during metal additive manufacturing (AM) reveal that the resulting subgrain cellular structures often grow along crystalline orientations different from the temperature gradient direction, some of which are not even along preferred crystallographic directions. It is well-known that dendrite orientation results from the growth competition between the heat flow direction and preferred crystallographic orientation. Specifically, the competition between interfacial anisotropy and process anisotropy (thermal gradient and growth velocity) during directional solidification leads to rich morphological diversity of the resulting dendritic structures, including tilted dendrites and seaweed patterns. The orientation selection mechanisms of such patterns remain unexplored at high velocity in the frame of AM. This study examines the tilted growth of cellular-dendritic arrays as a function of the misorientation angle ($θ_R$) between the thermal gradient and crystal lattice directions and other relevant control parameters. We use a phase-field model to explore dendritic evolution in a binary alloy during high-velocity solidification in 2D. We find marked effects of thermal gradient, growth velocity, alloy composition, and anisotropy parameters on the possible growth directions and the primary arm spacing, constitutional undercooling, microsegregation, and secondary phases that arise during dendritic solidification. Our work provides a detailed yet concise presentation on the tilted growth and morphological transition for a broad range of thermal conditions in the high-velocity regime and the full range of $θ_R$ for establishing orientation selection maps. These results should have qualitative relevance for controlling the subgrain structure, chemical segregation, and texture randomization in commercial dendrite materials relevant to AM.
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Submitted 12 January, 2025;
originally announced January 2025.
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Numerical Modelling of Buffer Layers for Advancing CZTSSe Solar Cell Efficiency
Authors:
Tanzir Ahamed,
Fozlur Rayhan,
Imteaz Rahaman,
Md. Hamidur Rahman,
Md. Mehedi Hasan Bappy,
Tanvir Ahammed,
Sampad Ghosh
Abstract:
Kesterite is a leading candidate among inorganic thin-film photovoltaic technologies, offering sustainable and environmentally friendly solutions without reliance on critical raw materials. This study investigates the performance of CZTSSe-based kesterite solar cells using SCAPS-1D simulations. Four device configurations are analyzed by integrating the CZTSSe absorber layer with buffer materials,…
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Kesterite is a leading candidate among inorganic thin-film photovoltaic technologies, offering sustainable and environmentally friendly solutions without reliance on critical raw materials. This study investigates the performance of CZTSSe-based kesterite solar cells using SCAPS-1D simulations. Four device configurations are analyzed by integrating the CZTSSe absorber layer with buffer materials, including CdS, SnS2, IGZO, and ZnSe, selected based on their energy band alignment. Moreover, key parameters influencing device efficiency, such as absorber defect density, buffer layer thickness, and the donor and defect densities of the buffer materials, are systematically examined. The thickness of the absorber layer and acceptor density are optimized, considering practical manufacturing constraints. Following optimization, the i-ZnO/SnS2/CZTSSe/Au configuration achieves a notable efficiency of 28.38%, with a VOC of 0.83 V, a JSC of 39.93 mA/cm2, and a fill factor of 85.4%. Furthermore, the stability of the optimized structures is evaluated under varying conditions, including resistances, temperature, generation and recombination dynamics, as well as JV and QE characteristics. These findings provide valuable insights for advancing the efficiency and stability of CZTSSe solar cells, contributing to the development of sustainable photovoltaic technologies.
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Submitted 11 January, 2025;
originally announced January 2025.
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Simulation on the Miniaturization and Performance Improvement Study of Gr/MoS2 Based Vertical Field Effect Transistor
Authors:
Sirsendu Ghosh,
Anamika Devi Laishram,
Pramod Kumar
Abstract:
Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high off-state current. Graphene (Gr) and transition metal di-chalcogenides (TMDs) are attractive materials for the next generation electronics. In this simulation work, the…
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Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high off-state current. Graphene (Gr) and transition metal di-chalcogenides (TMDs) are attractive materials for the next generation electronics. In this simulation work, the bulk molybdenum disulfide (MoS2) is sandwiched between perforated monolayer Gr which acts as the source electrode, and aluminum (Al) as the top drain electrode. In addition to this, the minimization of the off-state current is carried out by modifications in the source contact geometry by insulating some part of the source electrode and introducing the extra MoS2 layer between the source and gate dielectric named as buried layer. After the modification, the results show an improvement in OFF current, hence the ON/OFF ratio. The highest ON/OFF ratio of 109 is achieved with top side insulated source contact and thinnest buried layer of 02 nm with top and sidewall insulation. These results would support low voltage operation with high switching speed in complete 2D material based VFETs and further miniaturize its geometry.
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Submitted 7 January, 2025;
originally announced January 2025.
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On the Wiedemann-Franz law violation in Graphene and quark-gluon plasma systems
Authors:
Ashutosh Dwibedi,
Subhalaxmi Nayak,
Sathe Subodh Kiran,
Sabyasachi Ghosh,
Sesha Vempati
Abstract:
A comparative study of the thermodynamic and transport properties of the ultra-relativistic quark-gluon plasma (QGP) produced in Heavy ion collisions (HIC) with the "quasi-relativistic" massless electron-hole plasma in graphene sample has been performed. We observe that the enthalpy per net carrier density emerges as a useful physical quantity determining the hydrodynamic domain's transport variab…
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A comparative study of the thermodynamic and transport properties of the ultra-relativistic quark-gluon plasma (QGP) produced in Heavy ion collisions (HIC) with the "quasi-relativistic" massless electron-hole plasma in graphene sample has been performed. We observe that the enthalpy per net carrier density emerges as a useful physical quantity determining the hydrodynamic domain's transport variables. Lorenz ratio is defined as thermal to electrical conductivity ratio, normalized by temperature. In searching whether the Wiedemann-Franz (WF) law is obeyed or violated by checking the Lorenz ratio as one or deviated from one, we find that the Lorenz ratio determined from the fluid-based framework will always be responsible for the violation of the WF law. The reason is the proportional relation between Lorenz ratio and enthalpy per particle in the fluid. Based on the experimental observation, graphene, and QGP, both systems at low net charge density, exhibit WF law violation due to their fluid nature. However, graphene at high net charge density obeys the WF law, followed by metals with high Fermi energy or density. It indicates a fluid to the non-fluid transition of the graphene system from low to high-density domain. In this regard, the fluid or non-fluid aspect of QGP at high density is yet to be explored by future facilities like Compressed Baryonic matter (CBM) and Nuclotron-based Ion Collider fAcility (NICA) experiments.
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Submitted 3 January, 2025; v1 submitted 31 December, 2024;
originally announced January 2025.
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Magnon-Phonon Coupling in Layered Antiferromagnet
Authors:
Somsubhra Ghosh,
Mainak Palit,
Sujan Maity,
Subhadeep Datta
Abstract:
We present a fully analytical model of hybridization between magnon, and phonons observed experimentally in magneto-Raman scattering in van der Waals (vdW) antiferromagnets (AFM). Here, the representative material, FePS3, has been shown to be a quasi-two-dimensional-Ising antiferromagnet, with additional features of spin-phonon coupling in the Raman spectra emerging below the Néel temperature (TN)…
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We present a fully analytical model of hybridization between magnon, and phonons observed experimentally in magneto-Raman scattering in van der Waals (vdW) antiferromagnets (AFM). Here, the representative material, FePS3, has been shown to be a quasi-two-dimensional-Ising antiferromagnet, with additional features of spin-phonon coupling in the Raman spectra emerging below the Néel temperature (TN) of approximately 120 K. Using magneto-Raman spectroscopy as an optical probe of magnetic structure, we show that one of these Raman-active modes in the magnetically ordered state is a magnon with a frequency of 3.7 THz (~ 122 cm-1). In addition, one magnon band and three phonon bands are coupled via the magneto-elastic coupling evidenced by anti-crossing in the complete spectra. We consider a simple model involving only in-plane nearest neighbor exchange couplings (designed to give rise to a similar magnetic structure) and perpendicular anisotropy in presence of an out-of-plane magnetic field. Exact diagonalization of the Hamiltonian leads to energy bands which show that the interaction term gives rise to avoided crossings between the hybridized magnon and phonon branches. Realizing magnon-phonon coupling in two-dimensional (2D) AFMs is important for the verification of the theoretical predictions on exotic quantum transport phenomena like spin-caloritronics, topological magnonics, etc.
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Submitted 27 December, 2024;
originally announced December 2024.
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Inversion of Dislocation-Impurity Interactions in $α$-Fe under Magnetic State Changes
Authors:
Franco Moitzi,
Lorenz Romaner,
Andrei V. Ruban,
Swarnava Ghosh,
Markus Eisenbach,
Oleg E. Peil
Abstract:
In this work, we investigate the dislocation-impurity interaction energies and their profiles for various \textit{3d} elements \textemdash V, Cr, Mn, Cu, Ni, and Co \textemdash in and around $1/2\langle111\rangle$ screw dislocations in $α$-Fe using \textit{ab initio} methods. We consider the ferromagnetic and paramagnetic states, with the latter being modeled through both the disordered local mome…
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In this work, we investigate the dislocation-impurity interaction energies and their profiles for various \textit{3d} elements \textemdash V, Cr, Mn, Cu, Ni, and Co \textemdash in and around $1/2\langle111\rangle$ screw dislocations in $α$-Fe using \textit{ab initio} methods. We consider the ferromagnetic and paramagnetic states, with the latter being modeled through both the disordered local moment model and a spin-wave approach. Our findings reveal that (1) magnetic effects are large compared to size misfit effects of substitutional impurities, and (2) dislocation-impurity interactions are dependent on the magnetic state of the matrix and thermal lattice expansion. In particular, Cu changes from core-attractive in the ferromagnetic state to repulsive in the paramagnetic state.
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Submitted 15 May, 2025; v1 submitted 19 December, 2024;
originally announced December 2024.
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Consequences of magneto-electrical coupling in multiferroic VSe$_{2}$$/$Sc$_{2}$CO$_{2}$ heterostructures
Authors:
Himangshu Sekhar Sarma,
Subhradip Ghosh
Abstract:
Two-dimensional van der Waals heterostructures are potential game changers both in understanding the fundamental physics and in the realization of various devices that exploit magnetism at the nanoscale. Multiferroic heterostructures comprising a two-dimensional ferroelectric and a two-dimensional ferromagnet are ideal candidates for electrical control of properties of the ferromagnets that can le…
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Two-dimensional van der Waals heterostructures are potential game changers both in understanding the fundamental physics and in the realization of various devices that exploit magnetism at the nanoscale. Multiferroic heterostructures comprising a two-dimensional ferroelectric and a two-dimensional ferromagnet are ideal candidates for electrical control of properties of the ferromagnets that can lead to non-volatile memory devices, for example. Relatively new but immensely promising two-dimensional materials, MXene and transition metal dichalcogenides, can be effectively combined to achieve the goal as both have flexibilities in their structures and compositions that are tunable. In this work, using Density Functional Theory, we have investigated the magneto-electric coupling driven transitions in the electronic ground states of VSe$_{2}$-Sc$_{2}$CO$_{2}$ bi-layer and tri-layer heterostructures. Our results demonstrate that the change in the ferroelectric polarisation in the MXene layer leads to changes in the spin-polarized band structures of the magnetic component VSe$_{2}$ enabling a semiconductor to half-metal transition in these heterostructures. We propose several applications of this magneto-electric coupling in these multiferroic heterostructures that can lead to the efficient operation of Field Effect transistors and achieve non-volatility in memory devices at the nanoscale.
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Submitted 10 December, 2024;
originally announced December 2024.
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Effects of isotherm patterns on cellular interface morphologies of melt pool origin
Authors:
Saurabh Tiwari,
Supriyo Ghosh
Abstract:
Spatiotemporal variation of the thermal gradient in the melt pool inherited from different heat input patterns or other non-equilibrium transient effects during additive manufacturing can significantly affect the resulting subgrain microstructure evolution. To examine the impact of this variation, we approximate the thermal gradient by various isotherm patterns that move with constant velocity fol…
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Spatiotemporal variation of the thermal gradient in the melt pool inherited from different heat input patterns or other non-equilibrium transient effects during additive manufacturing can significantly affect the resulting subgrain microstructure evolution. To examine the impact of this variation, we approximate the thermal gradient by various isotherm patterns that move with constant velocity following directional solidification. We report the first three-dimensional phase-field simulations to investigate the effects of isotherm patterns on the cellular structures typically observed in solidified melt pools. Results indicate that small variations in the isotherm can considerably impact the microstructural features. We use appropriate statistical characterizations of the solid fraction, solid percolation, and solute partitioning behavior to demonstrate the influence of isotherm patterns on the dendritic structures and semisolid mushy zones. Consistent with experimental observations, we find that non-planar isotherms produce finer cells and reduced microsegregation compared to planar isotherms. Also, we note that a tilt of the isotherm leads to a tilted state of the resulting cellular arrays. Our findings will help in understanding the qualitative aspects of the influence of temperature gradient patterns on the evolution of solidification morphologies, mushy zones, and secondary phases, which are crucial for the macroscopic description of the solidified material.
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Submitted 22 November, 2024;
originally announced November 2024.
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Facilitating a 3D granular flow with an obstruction
Authors:
Abhijit Sinha,
Jackson Diodati,
Narayanan Menon,
Shubha Tewari,
Shankar Ghosh
Abstract:
Ensuring a smooth rate of efflux of particles from an outlet without unpredictable clogging events is crucial in processing powders and grains. We show by experiments and simulations that an obstacle placed near the outlet can greatly suppress clog formation in a 3-dimensional granular flow; this counterintuitive phenomenon had previously been demonstrated in 2-dimensional systems. Remarkably, clo…
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Ensuring a smooth rate of efflux of particles from an outlet without unpredictable clogging events is crucial in processing powders and grains. We show by experiments and simulations that an obstacle placed near the outlet can greatly suppress clog formation in a 3-dimensional granular flow; this counterintuitive phenomenon had previously been demonstrated in 2-dimensional systems. Remarkably, clog suppression is very effective even when the obstacle cross-section is comparable to that of a single grain, and is only a small fraction of the outlet area. Data from two dissimilar obstacle shapes indicate that the underlying mechanism for clog suppression is geometric: while the magnitude of the effect can be affected by dynamical factors, the optimal location of the obstacle is determined entirely by a simple geometric rule. An optimally-placed obstacle arranges for the most-probable clogging arch to be at a perilous and unstable spot, where the local flow geometry is at a point of expansion and a slight perturbation leaves the arch without downstream support. This geometric principle does not rely on previously conjectured dynamical mechanisms and admits generalization to other agent-based and particulate systems.
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Submitted 17 November, 2024;
originally announced November 2024.
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On the complexity of sampling from shallow Brownian circuits
Authors:
Gregory Bentsen,
Bill Fefferman,
Soumik Ghosh,
Michael J. Gullans,
Yinchen Liu
Abstract:
While many statistical properties of deep random quantum circuits can be deduced, often rigorously and other times heuristically, by an approximation to global Haar-random unitaries, the statistics of constant-depth random quantum circuits are generally less well-understood due to a lack of amenable tools and techniques. We circumvent this barrier by considering a related constant-time Brownian ci…
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While many statistical properties of deep random quantum circuits can be deduced, often rigorously and other times heuristically, by an approximation to global Haar-random unitaries, the statistics of constant-depth random quantum circuits are generally less well-understood due to a lack of amenable tools and techniques. We circumvent this barrier by considering a related constant-time Brownian circuit model which shares many similarities with constant-depth random quantum circuits but crucially allows for direct calculations of higher order moments of its output distribution. Using mean-field (large-n) techniques, we fully characterize the output distributions of Brownian circuits at shallow depths and show that they follow a Porter-Thomas distribution, just like in the case of deep circuits, but with a truncated Hilbert space. The access to higher order moments allows for studying the expected and typical Linear Cross-entropy (XEB) benchmark scores achieved by an ideal quantum computer versus the state-of-the-art classical spoofers for shallow Brownian circuits. We discover that for these circuits, while the quantum computer typically scores within a constant factor of the expected value, the classical spoofer suffers from an exponentially larger variance. Numerical evidence suggests that the same phenomenon also occurs in constant-depth discrete random quantum circuits, like those defined over the all-to-all architecture. We conjecture that the same phenomenon is also true for random brickwork circuits in high enough spatial dimension.
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Submitted 6 November, 2024;
originally announced November 2024.