Showing 1–4 of 4 results for author: Gervais, M

Microstructural and dielectric properties of Ba0.6Sr0.4Ti1-xZrxO3 based combinatorial thin film capacitors library

Authors: Guozhen Liu, Jerome Wolfman, Cécile Autret-Lambert, Joe Sakai, Sylvain Roger, Monique Gervais, François Gervais

Abstract: Epitaxial growth of Ba0.6Sr0.4Ti1-xZrxO3 (0/leqx\leq0.3) composition spread thin film library on SrRuO3/SrTiO3 layer by combinatorial pulsed laser deposition (PLD) is reported. X-ray diffraction and energy dispersive x-ray spectroscopy studies showed an accurate control of the film phase and composition by combinatorial PLD. A complex evolution of the microstructure and morphology with composition… ▽ More Epitaxial growth of Ba0.6Sr0.4Ti1-xZrxO3 (0/leqx\leq0.3) composition spread thin film library on SrRuO3/SrTiO3 layer by combinatorial pulsed laser deposition (PLD) is reported. X-ray diffraction and energy dispersive x-ray spectroscopy studies showed an accurate control of the film phase and composition by combinatorial PLD. A complex evolution of the microstructure and morphology with composition of the library is described, resulting from the interplay between epitaxial stress, increased chemical pressure and reduced elastic energy upon Zr doping. Statistical and temperature-related capacitive measurements across the library showed unexpected variations of the dielectric properties. Doping windows with enhanced permittivity and tunability are identified, and correlated to microstructural properties. △ Less

Submitted 28 October, 2010; v1 submitted 21 October, 2010; originally announced October 2010.

Comments: Accepted for publication in Journal of Applied Physics

Frequency dependent negative capacitance of (Ba0.6Sr0.4)(ZrxTi1-x)O3 thin films grown on La0.9Sr1.1NiO4 buffered SrTiO3 substrate

Authors: Y. K. Vayunandana Reddy, Jerome Wolfman, Monique Gervais, Francois

Abstract: Ba0.6Sr0.4TiO3 and (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films were deposited on La0.9Sr1.1NiO4 buffered SrTiO3 substrates. (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film (2.77 nF) showed one order large capacitance compared to that of Ba0.6Sr0.4TiO3 film (270 pF) at 100 kHz. (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film showed negative capacitance at f >3 MHz except for f=5.05 to 7.36 MHz, and 10.4 to 13.4 MHz, where it showed p… ▽ More Ba0.6Sr0.4TiO3 and (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films were deposited on La0.9Sr1.1NiO4 buffered SrTiO3 substrates. (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film (2.77 nF) showed one order large capacitance compared to that of Ba0.6Sr0.4TiO3 film (270 pF) at 100 kHz. (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film showed negative capacitance at f >3 MHz except for f=5.05 to 7.36 MHz, and 10.4 to 13.4 MHz, where it showed positive capacitance. Tunability of the Ba0.6Sr0.4TiO3 film (~15%) is much lower than that of the (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film (30 to 65%, both normal and inverse). A significant change of the tunability was observed at frequencies f>500 kHz for the (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film showing inverse tunability, this can be attributed to the negative capacitance effect, where current lags behind the voltage. (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film (6.87x10-6 A/cm2) showing one order high leakage current density than BST film (1.32x10-7 A/cm2). Ba0.6Sr0.4TiO3 film showed large grain size (140 nm) and surface roughness (11.5 nm) and (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film showed small grain size (80 nm) and roughness (2.3 nm). △ Less

Submitted 16 April, 2010; v1 submitted 7 August, 2009; originally announced August 2009.

Comments: This paper has been withdrawn by the author due to some misinterpretation of the results.

Electrode effects on electrical properties of polycrystalline (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films

Authors: Y. K. Vayunandana Reddy, Jerome Wolfman, Monique Gervais, Francois Gervais

Abstract: (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films were grown on IrO2 and Pt coated Si substrates. Film on Pt electrode showed large dielectric dispersion at lower frequency and on other hand film on IrO2 showed dielectric constant almost independent with frequency up to 1 MHz. Tunability (Loss) on Pt and IrO2 at 1 MHz were 55% (0.159) and 45% (0.07), respectively. The FOM is also high for film on IrO2 (620)… ▽ More (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films were grown on IrO2 and Pt coated Si substrates. Film on Pt electrode showed large dielectric dispersion at lower frequency and on other hand film on IrO2 showed dielectric constant almost independent with frequency up to 1 MHz. Tunability (Loss) on Pt and IrO2 at 1 MHz were 55% (0.159) and 45% (0.07), respectively. The FOM is also high for film on IrO2 (620) compared on to the Pt (345). Very low leakage current density also obtained on IrO2 (1.3 x 10-6 A/cm2) compared to Pt (6.14x10-3 A/cm2) coated Si substrates. △ Less

Submitted 16 April, 2010; v1 submitted 5 August, 2009; originally announced August 2009.

Comments: This paper has been withdrawn by the author due to make a major revision

Correlations of structural, magnetic, and dielectric properties of undoped and doped CaCu3Ti4O12

Authors: S. Krohns, J. Lu, P. Lunkenheimer, V. Brize, C. Autret-Lambert, M. Gervais, F. Gervais, F. Bouree, F. Porcher, A. Loidl

Abstract: The present work reports synthesis, as well as a detailed and careful characterization of structural, magnetic, and dielectric properties of differently tempered undoped and doped CaCu3Ti4O12 (CCTO) ceramics. For this purpose, neutron and x-ray powder diffraction, SQUID measurements, and dielectric spectroscopy have been performed. Mn-, Fe-, and Ni-doped CCTO ceramics were investigated in great… ▽ More The present work reports synthesis, as well as a detailed and careful characterization of structural, magnetic, and dielectric properties of differently tempered undoped and doped CaCu3Ti4O12 (CCTO) ceramics. For this purpose, neutron and x-ray powder diffraction, SQUID measurements, and dielectric spectroscopy have been performed. Mn-, Fe-, and Ni-doped CCTO ceramics were investigated in great detail to document the influence of low-level doping with 3d metals on the antiferromagnetic structure and dielectric properties. In the light of possible magnetoelectric coupling in these doped ceramics, the dielectric measurements were also carried out in external magnetic fields up to 7 T, showing a minor but significant dependence of the dielectric constant on the applied magnetic field. Undoped CCTO is well-known for its colossal dielectric constant in a broad frequency and temperature range. With the present extended characterization of doped as well as undoped CCTO, we want to address the question why doping with only 1% Mn or 0.5% Fe decreases the room-temperature dielectric constant of CCTO by a factor of ~100 with a concomitant reduction of the conductivity, whereas 0.5% Ni doping changes the dielectric properties only slightly. In addition, diffraction experiments and magnetic investigations were undertaken to check for possible correlations of the magnitude of the colossal dielectric constants with structural details or with magnetic properties like the magnetic ordering, the Curie-Weiss temperatures, or the paramagnetic moment. It is revealed, that while the magnetic ordering temperature and the effective moment of all investigated CCTO ceramics are rather similar, there is a dramatic influence of doping and tempering time on the Curie-Weiss constant. △ Less

Submitted 3 July, 2009; originally announced July 2009.

Comments: 10 pages, 11 figures

Journal ref: Eur. Phys. J. B 72, 173 (2009)