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Metal whisker growth induced by localized, high-intensity DC electric fields
Authors:
Vamsi Borra,
Osama Oudat,
Daniel G. Georgiev,
Victor G. Karpov,
Diana Shvydka
Abstract:
In this work, a very high, locally applied electric field was used to induce whisker nucleation on an Sn film. The field was generated by using a conductive AFM tip and applying a voltage bias between the sample and the conductive cantilever>The tip-sample separation distance was thus controllable, and any dielectric breakdown could be avoided. At locations where the AFM tip was positioned for an…
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In this work, a very high, locally applied electric field was used to induce whisker nucleation on an Sn film. The field was generated by using a conductive AFM tip and applying a voltage bias between the sample and the conductive cantilever>The tip-sample separation distance was thus controllable, and any dielectric breakdown could be avoided. At locations where the AFM tip was positioned for an extended period, minuscule whiskers were observed, whose growth direction matched vertical orientation of the field.
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Submitted 27 October, 2023;
originally announced October 2023.
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Sn whisker growth mitigation by using NiO sublayers
Authors:
Vamsi Borra,
Srikanth Itapu,
Daniel G. Georgiev
Abstract:
The potential of NiO sublayers for whisker growth mitigation has been examined. A thin NiO film was applied on a Cu-coated substrate before the deposition of a thicker Sn layer. The growth of Sn whiskers was then followed by optical and scanning electron microscopy and was compared with the whisker growth on a control sample without the NiO sublayer. No whiskers were observed on the sample with th…
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The potential of NiO sublayers for whisker growth mitigation has been examined. A thin NiO film was applied on a Cu-coated substrate before the deposition of a thicker Sn layer. The growth of Sn whiskers was then followed by optical and scanning electron microscopy and was compared with the whisker growth on a control sample without the NiO sublayer. No whiskers were observed on the sample with the NiO layer even after 12 months, whereas the control sample developed whiskers of size and density that is generally expected, based on the vast amount of published work on the topic. The mechanisms of whisker growth and whisker growth suppression are briefly discussed as well.
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Submitted 27 October, 2023;
originally announced October 2023.
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Fabrication of optically smooth Sn thin films
Authors:
Vamsi Borra,
Daniel G. Georgiev,
Corey R. Grice
Abstract:
The fabrication of optically smooth thin Sn films by vacuum or electrodeposition techniques is usually challenging. Little has been published on how to address this challenge mainly because very few applications require such smooth Sn surfaces. The excitation of surface plasmon polaritons on Sn surfaces by prism-based methods represents a case that requires very smooth surfaces and has motivated t…
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The fabrication of optically smooth thin Sn films by vacuum or electrodeposition techniques is usually challenging. Little has been published on how to address this challenge mainly because very few applications require such smooth Sn surfaces. The excitation of surface plasmon polaritons on Sn surfaces by prism-based methods represents a case that requires very smooth surfaces and has motivated this work. It is shown that the deposition rate and the substrate temperature of a vacuum evaporation method can be optimized to obtain very smooth Sn films and this is supported by direct imaging evidence from atomic force microscopy and scanning electron microscopy.
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Submitted 27 October, 2023;
originally announced October 2023.
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Cultivating Metal Whiskers by Surface Plasmon Polariton Excitation
Authors:
Vamsi Borra,
Daniel G. Georgiev,
Victor G. Karpov
Abstract:
This work presents a preliminary experimental study on the possibility to initiate growth of whiskers on the surfaces of some technologically important metals utilizing the enhanced electric field of surface plasmon polaritons (SPPs). The results provide evidence that a relatively high concentration of what appear to be whisker nuclei form in the region where SPPs were excited, whereas no such cha…
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This work presents a preliminary experimental study on the possibility to initiate growth of whiskers on the surfaces of some technologically important metals utilizing the enhanced electric field of surface plasmon polaritons (SPPs). The results provide evidence that a relatively high concentration of what appear to be whisker nuclei form in the region where SPPs were excited, whereas no such changes are observed on the untreated surface.
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Submitted 27 October, 2023;
originally announced October 2023.
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Modification of Tin (Sn) Metal Surfaces by Surface Plasmon Polariton Excitation
Authors:
Vamsi Borra,
Srikanth Itapu,
Victor G. Karpov,
Daniel G. Georgiev
Abstract:
We report on the modification of tin (Sn) film surfaces under a laser beam irradiation that triggers surface plasmon polariton (SPP) excitations. The observed surface features in the form of small raised grains, with well-defined rooting, look similar to tin whisker nodules. We attribute the appearance of those features to the field-induced nucleation caused by the SPP related strong electric fiel…
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We report on the modification of tin (Sn) film surfaces under a laser beam irradiation that triggers surface plasmon polariton (SPP) excitations. The observed surface features in the form of small raised grains, with well-defined rooting, look similar to tin whisker nodules. We attribute the appearance of those features to the field-induced nucleation caused by the SPP related strong electric field. Possible implications of our findings include accelerated-life testing for tin whisker growth-related reliability as well as applications to nanoparticle nucleation.
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Submitted 27 October, 2023;
originally announced October 2023.
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Threshold Switching in CdTe Photovoltaics
Authors:
Suman Devkota,
Kwame A Nyako,
Brendan Kuzior,
Victor G. Karpov,
Daniel G. Georgiev,
Frank X. Li,
Pedro Cortes,
Vamsi Borra
Abstract:
With the ubiquitous acceptance of PVs, the number of devices manufactured annually is following an exponential trend. Yet, the manufacturing process of important brands of thin film solar cells involves a tedious and expensive step of laser scribing. The time-consuming and technologically involved laser scribing method remains widely used to contact the device electrodes. This work examines an alt…
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With the ubiquitous acceptance of PVs, the number of devices manufactured annually is following an exponential trend. Yet, the manufacturing process of important brands of thin film solar cells involves a tedious and expensive step of laser scribing. The time-consuming and technologically involved laser scribing method remains widely used to contact the device electrodes. This work examines an alternative method (threshold switching phenomenon) to create an enduring conductive path in cadmium telluride (CdTe) PV, which eliminates the pitfalls in conventional scribing technology. The samples undergoing threshold switching show a promising sign of the conductive path compared to the control samples. This method could potentially lead to the manufacturing technology saving time, money, and raw materials along with added reliability and efficiency.
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Submitted 27 October, 2023;
originally announced October 2023.
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The statistics of tin whisker diameters versus the underlying film grains
Authors:
O. A. Oudat,
Vamsi Borra,
Daniel G. Georgiev,
V. G. Karpov
Abstract:
We compare the statistics of tin whisker diameters to that of the underlying film grains. Both are well approximated by the lognormal distributions. However, the parameters of those distributions can be rather different, not confirming the assumption that each whisker grows from a single grain. We conclude that several adjacent grains with similar crystal orientations can contribute to a whisker d…
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We compare the statistics of tin whisker diameters to that of the underlying film grains. Both are well approximated by the lognormal distributions. However, the parameters of those distributions can be rather different, not confirming the assumption that each whisker grows from a single grain. We conclude that several adjacent grains with similar crystal orientations can contribute to a whisker development. Our observations are consistent with the recent theory of multi-filament whisker structure. A modification of the particle size log-normal distribution is developed clarifying the nature of its dispersion.
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Submitted 25 June, 2018; v1 submitted 9 June, 2018;
originally announced June 2018.
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Microscopic structure of metal whiskers
Authors:
Vamsi Borra,
Daniel G. Georgiev,
V. G. Karpov,
Diana Shvydka
Abstract:
We present TEM images of the interior of metal whiskers (MW) grown on electroplated Sn films. Along with earlier published information, our observations focus on a number of questions, such as why MWs' diameters are in the micron range (significantly exceeding the typical nano-sizes of nuclei in solids), why the diameters remain practically unchanged in the course of MW growth, what is the nature…
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We present TEM images of the interior of metal whiskers (MW) grown on electroplated Sn films. Along with earlier published information, our observations focus on a number of questions, such as why MWs' diameters are in the micron range (significantly exceeding the typical nano-sizes of nuclei in solids), why the diameters remain practically unchanged in the course of MW growth, what is the nature of MW diameter stochasticity, and what is the origin of the well-known striation structure of MW side surfaces. In an attempt to address such questions we performed an in-depth study of MW structure at the nanoscale by detaching a MW from its original film, reducing its size to a thin slice by cutting its sides by a focused ion beam, and performing TEM on that structure. Our observations revealed a rich nontrivial morphology suggesting that MW may consist of many side by side grown filaments. This structure appears to extend to the outside whisker surface and be the reason for the striation. In addition, we put forward a theory where nucleation of multiple thin metal needles results into micron-scale and larger MW diameters. This theory is developed in the average field approximation similar to the roughening transitions of metal surfaces. The theory also predicts MW nucleation barriers and other observed features.
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Submitted 14 November, 2017;
originally announced November 2017.
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Whisker growth on Sn thin film accelerated under gamma-ray irradiation
Authors:
Morgan Killefer,
Vamsi Borra,
Ahmed Al-Bayati,
Daniel G. Georgiev,
Victor G. Karpov,
I. Eshmael Parsai,
Diana Shvydka
Abstract:
We report on growth of tin (Sn) metal whiskers that is significantly accelerated under gamma-ray irradiation. The studied Sn thin film, evaporated on glass substrate, was subjected to a total of ~60 hours of irradiation over the course of 30 days. The irradiated sample demonstrated the enhanced development, in both whisker densities and lengths, resulting in an acceleration factor of ~50. This mak…
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We report on growth of tin (Sn) metal whiskers that is significantly accelerated under gamma-ray irradiation. The studied Sn thin film, evaporated on glass substrate, was subjected to a total of ~60 hours of irradiation over the course of 30 days. The irradiated sample demonstrated the enhanced development, in both whisker densities and lengths, resulting in an acceleration factor of ~50. This makes gamma-ray irradiation a candidate tool for accelerated testing of whisker propensity. We attribute the observed enhancement to electrostatic fields created by charged defects in the glass substrate under ionizing radiation of gamma-rays.
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Submitted 13 June, 2017; v1 submitted 30 May, 2017;
originally announced May 2017.
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Long term aging of Selenide glasses: Evidence of sub-Tg endotherms and pre-Tg exotherms
Authors:
Ping Chen,
P. Boolchand,
D. G. Georgiev
Abstract:
Long term aging is studied on several families of chalcogenide glasses including the Ge-Se, As-Se, Ge-P-Se and Ge-As-Se systems. Special attention is given to the As-Se binary, a system that displays a rich variety of aging behavior intimately tied to sample synthesis conditions and the ambient environment in which samples are aged. Calorimetric (Modulated DSC) and Raman scattering experiments a…
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Long term aging is studied on several families of chalcogenide glasses including the Ge-Se, As-Se, Ge-P-Se and Ge-As-Se systems. Special attention is given to the As-Se binary, a system that displays a rich variety of aging behavior intimately tied to sample synthesis conditions and the ambient environment in which samples are aged. Calorimetric (Modulated DSC) and Raman scattering experiments are undertaken. Our results show all samples display a sub-Tg endotherm below Tg in glassy networks possessing a mean coordination number r in the 2.25 < r < 2.45 range. Two sets of AsxSe1-x samples aged for 8 years were compared, set A consisted of slow cooled samples aged in the dark, and set B consisted of melt quenched samples aged at laboratory environment. Samples of set B in the As concentration range, 35% < x < 60%, display a pre-Tg exotherm, but the feature is not observed in samples of set A. The aging behavior of set A presumably represents intrinsic aging in these glasses, while that of set B is extrinsic due to presence of light. The reversibility window persists in both sets of samples but is less well defined in set B. These findings contrast with a recent study by Golovchak et al., which finds the onset of the reversibility window moved up to the stoichiometric composition (x = 40%). Here we show that the upshifted window is better understood as resulting due to demixing of As4Se4 and As4Se3 molecules from the backbone, i.e., Nanoscale phase separation (NSPS). We attribute sub-Tg endotherms to compaction of the flexible part of networks upon long term aging, while the pre-Tg exotherm to NSPS. Finally, the narrowing and sharpening of the reversibility window upon aging is interpreted as the slow 'self-organizing' stress relaxation of the phases just outside the Intermediate phase.
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Submitted 12 January, 2010; v1 submitted 18 July, 2009;
originally announced July 2009.
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Intermediate phase, network demixing, boson and floppy modes, and compositional trends in glass transition temperatures of binary AsxS1-x system
Authors:
Ping Chen,
Chad Holbrook,
P. Boolchand,
D. G. Georgiev,
K. A. Jackson,
M. Micoulaut
Abstract:
The structure of binary As_xS_{1-x} glasses is elucidated using modulated-DSC, Raman scattering, IR reflectance and molar volume experiments over a wide range (8%<x<41%) of compositions. We observe a reversibility window in the calorimetric experiments, which permits fixing the three elastic phases; flexible at x<22.5%, intermediate phase (IP) in the 22.5%<x<29.5% range, and stressed-rigid at x>…
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The structure of binary As_xS_{1-x} glasses is elucidated using modulated-DSC, Raman scattering, IR reflectance and molar volume experiments over a wide range (8%<x<41%) of compositions. We observe a reversibility window in the calorimetric experiments, which permits fixing the three elastic phases; flexible at x<22.5%, intermediate phase (IP) in the 22.5%<x<29.5% range, and stressed-rigid at x>29.5%. Raman scattering supported by first principles cluster calculations reveal existence of both pyramidal (PYR, As(S1/2)3) and quasi-tetrahedral(QT, S=As(S1/2)3) local structures. The QT unit concentrations show a global maximum in the IP, while the concentration of PYR units becomes comparable to those of QT units in the phase, suggesting that both these local structures contribute to the width of the IP. The IP centroid in the sulfides is significantly shifted to lower As content x than in corresponding selenides, a feature identified with excess chalcogen partially segregating from the backbone in the sulfides, but forming part of the backbone in selenides. These ideas are corroborated by the proportionately larger free volumes of sulfides than selenides, and the absence of chemical bond strength scaling of Tgs between As-sulfides and As-selenides. Low-frequency Raman modes increase in scattering strength linearly as As content x of glasses decreases from x = 20% to 8%, with a slope that is close to the floppy mode fraction in flexible glasses predicted by rigidity theory. These results show that floppy modes contribute to the excess vibrations observed at low frequency. In the intermediate and stressed rigid elastic phases low-frequency Raman modes persist and are identified as boson modes. Some consequences of the present findings on the optoelectronic properties of these glasses is commented upon.
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Submitted 20 November, 2008; v1 submitted 20 October, 2008;
originally announced October 2008.
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Aging, Fragility and Reversibility Window in Bulk Alloy Glasses
Authors:
S. Chakravarty,
D. G. Georgiev,
P. Boolchand,
M. Micoulaut
Abstract:
Non-reversing relaxation enthalpies (DHnr) at glass transitions Tg(x) in the PxGexSe1-2x ternary display wide, sharp and deep global minima (~ 0) in the 0.09 < x < 0.145 range, within which Tgs become thermally reversing. In this reversibility window, glasses are found not to age, in contrast to aging observed for fragile glass compositions outside the window. Thermal reversibility and lack of a…
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Non-reversing relaxation enthalpies (DHnr) at glass transitions Tg(x) in the PxGexSe1-2x ternary display wide, sharp and deep global minima (~ 0) in the 0.09 < x < 0.145 range, within which Tgs become thermally reversing. In this reversibility window, glasses are found not to age, in contrast to aging observed for fragile glass compositions outside the window. Thermal reversibility and lack of aging seem to be paradigms of self-organization which molecular glasses share with protein structures which repetitively and reversibly change conformation near Tg and the folding temperature respectively.
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Submitted 27 September, 2007;
originally announced September 2007.
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Intrinsic Nanoscale Phase Seperation of bulk As2S3 Glass
Authors:
D. G. Georgiev,
P. Boolchand,
K. A. Jackson
Abstract:
Raman scattering on bulk AsxS1-x glasses showes that vibrational modes of As4S4 monomer first appear near x=0.38, and their concentration increases precipitously with increasing x, suggesting that the stoichiometric glass (x=0.40) is intrinsically phase seperated into small As-rich(As4S4) and large S-righ clusters. Support for the Raman-active vibrational modes of the orpiment-like and realgar-l…
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Raman scattering on bulk AsxS1-x glasses showes that vibrational modes of As4S4 monomer first appear near x=0.38, and their concentration increases precipitously with increasing x, suggesting that the stoichiometric glass (x=0.40) is intrinsically phase seperated into small As-rich(As4S4) and large S-righ clusters. Support for the Raman-active vibrational modes of the orpiment-like and realgar-like nanophases is provided by ab-initio density functional theory calculations on appropriate clusters. Nanoscale phase seperation provides a basis for understanding the global maximum in the glass transition temperature Tg near x=0.40, and the departure from Arrhenius temperature activation of As2S3 melt viscosities.
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Submitted 5 August, 2003;
originally announced August 2003.
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The Intermediate Phase in Ternary GexAsxSe1-2x Glasses
Authors:
Tao Qu,
D. G. Georgiev,
P. Boolchand,
M. Micoulaut
Abstract:
Melt-quenched AsxGexSe1-2x glasses over the composition range, 0 < x < 0.26, are examined in Raman scattering, T-modulated Differential Scanning Calorimetry (MDSC), and 119Sn Mossbauer spectroscopy measurements. The non-reversing enthalpy near Tg, DHnr(x), accessed from MDSC shows a global minimum (~ 0) in the xc(1) = 0.09 < x < xc(2) = 0.16 range, and increases by an order of magnitude both at…
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Melt-quenched AsxGexSe1-2x glasses over the composition range, 0 < x < 0.26, are examined in Raman scattering, T-modulated Differential Scanning Calorimetry (MDSC), and 119Sn Mossbauer spectroscopy measurements. The non-reversing enthalpy near Tg, DHnr(x), accessed from MDSC shows a global minimum (~ 0) in the xc(1) = 0.09 < x < xc(2) = 0.16 range, and increases by an order of magnitude both at x < xc(1) and at x > xc(2). Raman mode frequency of corner-sharing Ge(Se1/2)4 tetrahedra studied as a function of x, also shows three distinct regimes (or power-laws, p) that coincide with DHnr(x) trends. These regimes are identified with mechanically floppy (x < xc(1)), intermediate (xc(1) < x < xc(2)), and stressed-rigid (x > xc(2)) phases. The Raman elasticity power-law in the intermediate phase, p1 = 1.04(3), and in the stressed rigid phase, p2= 1.52(5), suggest effective dimensionalities of d = 2 and 3 respectively.
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Submitted 4 August, 2003;
originally announced August 2003.
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Aging, Fragility and Reversibility Window in Bulk Alloy Glasses
Authors:
S. Chakravarty,
D. G. Georgiev,
P. Boolchand,
M. Micoulaut
Abstract:
Non-reversing relaxation enthalpies (DHnr) at glass transitions Tg(x) in the PxGexSe1-2x ternary display a wide, sharp and deep global minimum (~0) in the 0.09 < x < 0.145 range, within which Tg becomes thermally reversing. In the reversibility window these glasses are found not to age, in contrast to aging observed for fragile glass compositions outside the window. Thermal reversibility and lac…
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Non-reversing relaxation enthalpies (DHnr) at glass transitions Tg(x) in the PxGexSe1-2x ternary display a wide, sharp and deep global minimum (~0) in the 0.09 < x < 0.145 range, within which Tg becomes thermally reversing. In the reversibility window these glasses are found not to age, in contrast to aging observed for fragile glass compositions outside the window. Thermal reversibility and lack of aging are paradigms that molecular glasses in the window share with proteins in transition states, which result from structural self-organization in both systems. In proteins the self-organized structures appear to be at places where life sustaining repeating foldings and unfoldings occur.
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Submitted 1 August, 2003;
originally announced August 2003.