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Strain-induced polarization rotation in freestanding ferroelectric oxide membranes
Authors:
Alban Degezelle,
Razvan Burcea,
Pascale Gemeiner,
Maxime Vallet,
Brahim Dkhil,
Stéphane Fusil,
Vincent Garcia,
Sylvia Matzen,
Philippe Lecoeur,
Thomas Maroutian
Abstract:
Freestanding ferroelectric membranes have emerged as a versatile tool for strain engineering, enabling the exploration of ferroelectric properties beyond traditional epitaxy. The resulting ferroelectric domain patterns stem from the balance at the local scale of several effects playing a key role, i.e. piezoelectricity linked to strain, and flexoelectricity arising from strain gradients. To weight…
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Freestanding ferroelectric membranes have emerged as a versatile tool for strain engineering, enabling the exploration of ferroelectric properties beyond traditional epitaxy. The resulting ferroelectric domain patterns stem from the balance at the local scale of several effects playing a key role, i.e. piezoelectricity linked to strain, and flexoelectricity arising from strain gradients. To weight their respective contributions for a given membrane geometry, the strain profile has to be mapped with respect to the ferroelectric polarization landscape, a necessary step to allow for a controlled tailoring of the latter. In this study, we examine the effect of bending strain on a Pb(Zr,Ti)O3 membrane in a fold-like structure, observing a polarization rotation from out-of-plane to in-plane at the fold apex. Combining piezoresponse force microscopy, Raman spectroscopy, and scanning transmission electron microscopy, we map the ferroelectric polarization direction relative to the height profile of the membrane, and discuss the contributions of strain and strain gradients for this archetypal fold geometry. Our findings offer new insights into strain-engineered polarization configurations, and emphasize strain effects at the nanoscale to tune the functional properties in freestanding membranes.
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Submitted 12 April, 2025;
originally announced April 2025.
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Band gap tuning by structural phase transition in Sm-substituted BiFeO3 powders
Authors:
Christina Hill,
Michele Melchiorre,
Cosme Milesi-Brault,
Pascale Gemeiner,
Fabienne Karolak,
Christine Bogicevic,
Brahim Dkhil,
Ingrid Canero-Infante,
Mael Guennou
Abstract:
The substitution of bismuth by samarium in BiFeO3 is known to induce a structural phase transition from the polar phase to a non-polar phase, with a possible antiferroelectric intermediate structure. In this paper, we investigate the impact of this phase change on the optical properties. The optical band gap was measured by diffuse reflectance as a function of temperature for several samarium conc…
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The substitution of bismuth by samarium in BiFeO3 is known to induce a structural phase transition from the polar phase to a non-polar phase, with a possible antiferroelectric intermediate structure. In this paper, we investigate the impact of this phase change on the optical properties. The optical band gap was measured by diffuse reflectance as a function of temperature for several samarium concentrations across the structural phase transition. We found that the optical band gap for each of the pure phases varies linearly with temperature and that the phase transitions are revealed by smooth transitions between those linear regimes. This allows us to quantify the contribution of the structural change in the optical absorption. We find that a difference in optical band gap of about 130meV can be attributed to the phase change. We anticipate that the same change could be obtained by applying an electric field in an antiferroelectric composition.
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Submitted 10 April, 2025;
originally announced April 2025.
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Optical and electronic properties in ferroelectric barium titanate-based compounds
Authors:
Ingrid C. Infante,
Halyna Volkova,
Pascale Gemeiner,
Grégory Geneste,
Jérôme Guillot,
Carlos Frontera,
Nidal Banja,
Fabienne Karolak,
Christine Bogicevic,
Brahim Dkhil,
Nicolas Chauvin,
Damien Lenoble
Abstract:
The bandgap energy values for the ferroelectric BaTiO3-based solid solutions with isovalent substitution Ba1-x SrxTiO3, BaZrxTi1-xO3 and BaSnxTi1-xO3 were determined using diffuse reflectance spectra. While the corresponding unit cell volume follows Vegard's law in accordance with the different ionic radii of the ionic substitutions, the bandgap values depict non-linear compositional dependences f…
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The bandgap energy values for the ferroelectric BaTiO3-based solid solutions with isovalent substitution Ba1-x SrxTiO3, BaZrxTi1-xO3 and BaSnxTi1-xO3 were determined using diffuse reflectance spectra. While the corresponding unit cell volume follows Vegard's law in accordance with the different ionic radii of the ionic substitutions, the bandgap values depict non-linear compositional dependences for all the solid solutions. The effect is considerably large for BaZrxTi1-xO3 and BaSnxTi1-xO3 solutions, depicting a bandgap linear compositional dependence up to x=0.6, for x>0.6 BaZrxTi1-xO3 compounds present much larger bandgap values than BaSnxTi1-xO3 counterparts. Electronic properties have been investigated through X-ray photoelectron spectroscopy in BaSnxTi1-xO3 compounds, indicating that the Sn 3d and Ti 2p core levels shift against the Ba 3d ones within the whole compositional range with the same energy trend as that observed for the optical bandgap. Since for Ba1-x SrxTiO3 compounds no major bandgap variation is observed, we conclude that the bandgap compositional dependences observed for BaSnxTi1-xO3 compounds and BaZrxTi1-xO3 ones are originated from the structural sensitivity of the O, Ti and Sn or Zr electronic bands involved in the bandgap transition of these compounds. With this work, we underline the reliability of the bandgap determined from diffuse reflectance spectrometry experiments, as a means to non-invasively evaluate the electronic properties of powder materials.
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Submitted 18 March, 2019;
originally announced March 2019.
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Surface phase transitions in BiFeO3 below room temperature
Authors:
R. Jarrier,
X. Marti,
J. Herrero-Albillos,
P. Ferrer,
R. Haumont,
P. Gemeiner,
G. Geneste,
P. Berthet,
T. Schülli,
P. Cvec,
R. Blinc,
Stanislaus S. Wong,
Tae-Jin Park,
M. Alexe,
M. A. Carpenter,
J. F. Scott,
G. Catalan,
B. Dkhil
Abstract:
We combine a wide variety of experimental techniques to analyze two heretofore mysterious phase transitions in multiferroic bismuth ferrite at low temperature. Raman spectroscopy, resonant ultrasound spectroscopy, EPR, X-ray lattice constant measurements, conductivity and dielectric response, specific heat and pyroelectric data have been collected for two different types of samples: single crystal…
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We combine a wide variety of experimental techniques to analyze two heretofore mysterious phase transitions in multiferroic bismuth ferrite at low temperature. Raman spectroscopy, resonant ultrasound spectroscopy, EPR, X-ray lattice constant measurements, conductivity and dielectric response, specific heat and pyroelectric data have been collected for two different types of samples: single crystals and, in order to maximize surface/volume ratio to enhance surface phase transition effects, BiFeO3 nanotubes were also studied. The transition at T=140.3K is shown to be a surface phase transition, with an associated sharp change in lattice parameter and charge density at the surface. Meanwhile, the 201K anomaly appears to signal the onset of glassy behaviour.
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Submitted 15 February, 2012;
originally announced February 2012.
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Magnetodielectric coupling and phonon properties of compressively strained EuTiO3 thin films deposited on LSAT
Authors:
S. Kamba,
V. Goian,
M. Orlita,
D. Nuzhnyy,
J. H. Lee,
D. G. Schlom,
K. Rushchanskii,
M. Lezaic,
T. Birol,
C. J. Fennie,
P. Gemeiner,
B. Dkhil,
V. Bovtun,
M. Kempa,
J. Hlinka,
J. Petzelt
Abstract:
Compressively strained epitaxial (001) EuTiO3 thin films of tetragonal symmetry have been deposited on (001) (LaAlO3)_0.29-(SrAl_{1/2}Ta_{1/2}O3)_0.71 (LSAT) substrates by reactive molecular-beam epitaxy. Enhancement of the Neel temperature by 1 K with 0.9% compressive strain was revealed. The polar phonons ofthe films have been investigated as a function of temperature and magnetic field by means…
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Compressively strained epitaxial (001) EuTiO3 thin films of tetragonal symmetry have been deposited on (001) (LaAlO3)_0.29-(SrAl_{1/2}Ta_{1/2}O3)_0.71 (LSAT) substrates by reactive molecular-beam epitaxy. Enhancement of the Neel temperature by 1 K with 0.9% compressive strain was revealed. The polar phonons ofthe films have been investigated as a function of temperature and magnetic field by means of infrared reflectance spectroscopy. All three infrared active phonons show strongly stiffened frequencies compared to bulk EuTiO3 in accordance with first principles calculations. The phonon frequencies exhibit gradual softening on cooling leading to an increase in static permittivity. A new polar phonon with frequency near the TO1 soft mode was detected below 150 K. The new mode coupled with the TO1 mode was assigned as the optical phonon from the Brillouin zone edge, which is activated in infrared spectra due to an antiferrodistortive phase transition and due to simultaneous presence of polar and/or magnetic nanoclusters. In the antiferromagnetic phase we have observed a remarkable softening of the lowest-frequency polar phonon under an applied magnetic field, which qualitatively agrees with first principles calculations. This demonstrates the strong spin-phonon coupling in EuTiO3, which is responsible for the pronounced dependence of its static permittivity on magnetic field in the antiferromagnetic phase.
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Submitted 1 March, 2012; v1 submitted 26 January, 2012;
originally announced January 2012.
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Multiferroic phase transition near room temperature in BiFeO3 films
Authors:
I. C. Infante,
J. Juraszek,
S. Fusil,
B. Dupe,
P. Gemeiner,
O. Dieguez,
F. Pailloux,
S. Jouen,
E. Jacquet,
G. Geneste,
J. Pacaud,
J. Iniguez,
L. Bellaiche,
A. Barthelemy,
B. Dkhil,
M. Bibes
Abstract:
In multiferroic BiFeO3 thin films grown on highly mismatched LaAlO3 substrates, we reveal the coexistence of two differently distorted polymorphs that leads to striking features in the temperature dependence of the structural and multiferroic properties. Notably, the highly distorted phase quasi-concomitantly presents an abrupt structural change, transforms from a hard to a soft ferroelectric and…
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In multiferroic BiFeO3 thin films grown on highly mismatched LaAlO3 substrates, we reveal the coexistence of two differently distorted polymorphs that leads to striking features in the temperature dependence of the structural and multiferroic properties. Notably, the highly distorted phase quasi-concomitantly presents an abrupt structural change, transforms from a hard to a soft ferroelectric and transitions from antiferromagnetic to paramagnetic at 360+/-20 K. These coupled ferroic transitions just above room temperature hold promises of giant piezoelectric, magnetoelectric and piezomagnetic responses, with potential in many applications fields.
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Submitted 30 May, 2011;
originally announced May 2011.
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A new temperature scale T* in lead-based relaxor systems
Authors:
B. Dkhil,
P. Gemeiner,
A. Al-Barakaty,
L. Bellaiche,
E. Dulkin,
E. Mojaev,
M. Roth
Abstract:
Via a combination of various experimental and theoretical techniques, a peculiar, identical temperature scale T* is found to exist in all complex lead-based relaxor ferroelectrics. T* corresponds to a nanoscale phase transition due to random fields. Interestingly, T* also exists in other oxides with extraordinary properties, such as giant magnetoresistivity or superconductivity. By analogy with…
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Via a combination of various experimental and theoretical techniques, a peculiar, identical temperature scale T* is found to exist in all complex lead-based relaxor ferroelectrics. T* corresponds to a nanoscale phase transition due to random fields. Interestingly, T* also exists in other oxides with extraordinary properties, such as giant magnetoresistivity or superconductivity. By analogy with such latter systems, the giant piezoelectricity related to relaxors might originate from proximity competing states effect.
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Submitted 19 January, 2009;
originally announced January 2009.
