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Anisotropic magnetoresistance in altermagnetic MnTe
Authors:
Ruben Dario Gonzalez Betancourt,
Jan Zubáč,
Kevin Geishendorf,
Philipp Ritzinger,
Barbora Růžičková,
Tommy Kotte,
Jakub Železný,
Kamil Olejník,
Gunther Springholz,
Bernd Büchner,
Andy Thomas,
Karel Výborný,
Tomas Jungwirth,
Helena Reichlová,
Dominik Kriegner
Abstract:
Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical res…
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Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order.
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Submitted 25 April, 2024;
originally announced April 2024.
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Observation of an unexpected negative magnetoresistance in magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$
Authors:
Ali G. Moghaddam,
Kevin Geishendorf,
Richard Schlitz,
Jorge I. Facio,
Praveen Vir,
Chandra Shekhar,
Claudia Felser,
Kornelius Nielsch,
Sebastian T. B. Goennenwein,
Jeroen van den Brink,
Andy Thomas
Abstract:
Time-reversal symmetry breaking allows for a rich set of magneto-transport properties related to electronic topology. Focusing on the magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$, we prepared micro-ribbons and investigated their transverse and longitudinal transport properties from 100 K to 180 K in magnetic fields $μ_0 H$ up to 2T. We establish the presence of a magnetoresistance (MR) up to 1 % with…
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Time-reversal symmetry breaking allows for a rich set of magneto-transport properties related to electronic topology. Focusing on the magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$, we prepared micro-ribbons and investigated their transverse and longitudinal transport properties from 100 K to 180 K in magnetic fields $μ_0 H$ up to 2T. We establish the presence of a magnetoresistance (MR) up to 1 % with a strong anisotropy depending the projection of $H$ on the easy-axis magnetization, which exceeds all other magnetoresistive effects. Based on detailed phenomenological modeling, we attribute the observed results with unexpected form of anisotropy to magnon MR resulting from magnon-electron coupling. Moreover, a similar angular dependence is also found in the transverse resistivity which we show to originate from the combination of ordinary Hall and anomalous Hall effects. Thus the interplay of magnetic and topological properties governs the magnetotransport features of this magnetic Weyl system.
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Submitted 17 November, 2022;
originally announced November 2022.
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Spontaneous anomalous Hall effect arising from an unconventional compensated magnetic phase in a semiconductor
Authors:
R. D. Gonzalez Betancourt,
J. Zubáč,
R. J. Gonzalez-Hernandez,
K. Geishendorf,
Z. Šobáň,
G. Springholz,
K. Olejník,
L. Šmejkal,
J. Sinova,
T. Jungwirth,
S. T. B. Goennenwein,
A. Thomas,
H. Reichlová,
J. Železný,
D. Kriegner
Abstract:
The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a colli…
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The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure. The anisotropic crystal environment of magnetic Mn atoms due to the non-magnetic Te atoms is essential for establishing the unconventional phase and generating the anomalous Hall effect.
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Submitted 23 January, 2023; v1 submitted 13 December, 2021;
originally announced December 2021.
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Optically gated terahertz-field-driven switching of antiferromagnetic CuMnAs
Authors:
J. J. F. Heitz,
L. Nádvorník,
V. Balos,
Y. Behovits,
A. L. Chekhov,
T. S. Seifert,
K. Olejník,
Z. Kašpar,
K. Geishendorf,
V. Novák,
R. P. Campion,
M. Wolf,
T. Jungwirth,
T. Kampfrath
Abstract:
We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines…
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We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines the time scale of the suppression. As we do not observe a direct impact of the optical pulse on the state of CuMnAs, all observed effects are primarily mediated by the substrate. The sample region of suppressed resistance switching is given by the optical spot size, thereby making our scheme potentially applicable for transient low-power masking of structured areas with feature sizes of ~100 nm and even smaller.
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Submitted 16 June, 2021;
originally announced June 2021.
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Atomic Layer Deposition of Yttrium Iron Garnet Thin Films for 3D Magnetic Structures
Authors:
M. Lammel,
D. Scheffler,
D. Pohl,
P. Swekis,
S. Reitzig,
H. Reichlova,
R. Schlitz,
K. Geishendorf,
L. Siegl,
B. Rellinghaus,
L. M. Eng,
K. Nielsch,
S. T. B. Goennenwein,
A. Thomas
Abstract:
A wide variety of new phenomena such as novel magnetization configurations have been predicted to occur in three dimensional magnetic nanostructures. However, the fabrication of such structures is often challenging due to the specific shapes required, such as magnetic tubes and spirals. Furthermore, the materials currently used to assemble these structures are predominantly magnetic metals that do…
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A wide variety of new phenomena such as novel magnetization configurations have been predicted to occur in three dimensional magnetic nanostructures. However, the fabrication of such structures is often challenging due to the specific shapes required, such as magnetic tubes and spirals. Furthermore, the materials currently used to assemble these structures are predominantly magnetic metals that do not allow to study the magnetic response of the system separately from the electronic one. In the field of spintronics, the prototypical material used for such experiments is the ferrimagnetic insulator yttrium iron garnet (Y$_3$Fe$_5$O$_{12}$, YIG). YIG is one of the best materials especially for magnonic studies due to its low Gilbert damping. Here, we report the first successful fabrication of YIG thin films via atomic layer deposition. To that end we utilize a supercycle approach based on the combination of sub-nanometer thin layers of the binary systems Fe$_2$O$_3$ and Y$_2$O$_3$ in the correct atomic ratio on Y$_3$Al$_5$O$_{12}$ substrates with a subsequent annealing step. Our process is robust against typical growth-related deviations, ensuring a good reproducibility. The ALD-YIG thin films exhibit a good crystalline quality as well as magnetic properties comparable to other deposition techniques. One of the outstanding characteristics of atomic layer deposition is its ability to conformally coat arbitrarily-shaped substrates. ALD hence is the ideal deposition technique to grant an extensive freedom in choosing the shape of the magnetic system. The atomic layer deposition of YIG enables the fabrication of novel three dimensional magnetic nanostructures, which in turn can be utilized for experimentally investigating the phenomena predicted in those structures.
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Submitted 18 January, 2022; v1 submitted 20 April, 2021;
originally announced April 2021.
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Fast fourier transform and multi-Gaussian fitting of XRR data to determine the thickness of ALD grown thin films within the initial growth regime
Authors:
Michaela Lammel,
Kevin Geishendorf,
Marisa Choffel,
Danielle Hamann,
David Johnson,
Kornelius Nielsch,
Andy Thomas
Abstract:
While a linear growth behavior is one of the fingerprints of textbook atomic layer deposition processes, the growth often deviates from that behavior in the initial regime, i.e. the first few cycles of a process. To properly understand the growth behavior in the initial regime is particularly important for applications that rely on the exact thickness of very thin films. The determination of the t…
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While a linear growth behavior is one of the fingerprints of textbook atomic layer deposition processes, the growth often deviates from that behavior in the initial regime, i.e. the first few cycles of a process. To properly understand the growth behavior in the initial regime is particularly important for applications that rely on the exact thickness of very thin films. The determination of the thicknesses of the initial regime, however, often requires special equipment and techniques that are not always available. We propose a thickness determination method that is based on X-ray reflectivity (XRR) measurements on double layer structures, i.e. substrate/base layer/top layer. XRR is a standard thin film characterization method. Utilizing the inherent properties of fast Fourier transformation in combination with a multi-Gaussian fitting routine permits the determination of thicknesses down to $t \approx 2$ nm. We evaluate the boundaries of our model, which are given by the separation and full width at half maximum of the individual Gaussians. Finally, we compare our results from two layer stacks with data from X-ray fluorescence spectroscopy, which is a standard method for measuring ultra thin films.
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Submitted 3 November, 2020; v1 submitted 11 August, 2020;
originally announced August 2020.
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The impact of metallic contacts on spin-polarized photocurrents in topological insulator $\text{Bi}_2\text{Se}_3$ nanowires
Authors:
Nina Meyer,
Kevin Geishendorf,
Jakob Walowski,
Andy Thomas,
Markus Münzenberg
Abstract:
Recently, a new quantum phase, the topological insulator, has been vividly investigated in a variety of materials. Its unique bandstructure allows for optical generation and control of spin-polarized currents based on the circular photogalvanic effect. In this paper, we generate and distinguish the different photocurrent contributions via the the polarization of the driving light wave. We discuss…
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Recently, a new quantum phase, the topological insulator, has been vividly investigated in a variety of materials. Its unique bandstructure allows for optical generation and control of spin-polarized currents based on the circular photogalvanic effect. In this paper, we generate and distinguish the different photocurrent contributions via the the polarization of the driving light wave. We discuss the helicity-dependent spin-polarized current and the polarization independent thermoelectric current as spatially resolved maps, focusing on the influence of the topological insulator/metallic contact interface. We observe for both current contributions a significant enhancement of the current values at the topological insulator/metallic contact interface and moreover a dipole-like distribution of the spin-polarized current close to the contacts. We discuss the general behavior of the thermovoltage as a three-material Seebeck effect and explain the enhanced values by the acceleration of the photoelectrons generated in the space charge region of the topological insulator/metallic contact interface. Furthermore, we interpret the temperature gradient together with the spin Nernst effect as a possible origin for the enhancement and dipole-like distribution of the spin-polarized current.
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Submitted 22 January, 2021; v1 submitted 2 July, 2020;
originally announced July 2020.
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Photocurrent measurements in topological insulator $\text{Bi}_2\text{Se}_3$ nanowires
Authors:
N. Meyer,
K. Geishendorf,
J. Walowski,
A. Thomas,
M. Münzenberg
Abstract:
Circular photogalvanic currents are a promising new approach for spin-optoelectronics. To date, such currents have only been induced in topological insulator flakes or extended films. It is not clear whether they can be generated in nanodevices. In this paper, we demonstrate the generation of circular photogalvanic currents in $\text{Bi}_2\text{Se}_3$ nanowires. Each nanowire shows topological sur…
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Circular photogalvanic currents are a promising new approach for spin-optoelectronics. To date, such currents have only been induced in topological insulator flakes or extended films. It is not clear whether they can be generated in nanodevices. In this paper, we demonstrate the generation of circular photogalvanic currents in $\text{Bi}_2\text{Se}_3$ nanowires. Each nanowire shows topological surface states. Here, we generate and distinguish the different photocurrent contributions via the driving light wave. We separate the circular photogalvanic currents from those due to thermal Seebeck effects, through controlling the laser light polarization. The results reveal a spin-polarized surface-Dirac electron flow in the nanowires arising from spin-momentum locking and spin-orbit effects. The second photocurrent contribution described in this letter is caused by the thermal Seebeck effect. By scanning the photocurrent, it can be spatially resolved; upon reversing the gradient direction along the nanowire, the photocurrent changes its sign, and close to the gold contacts, the amplitudes of the different photocurrent contributions are affected by the proximity to the contacts. In the center of the nanowires, where the effects from the gold contact/ topological insulator stacks vanish, the spin-polarized current remains constant along the nanowires. This opens up a new method of all-optical spin current generation in topological insulator nanowires and hybrid structures for nanoscale spin-orbitronics.
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Submitted 7 May, 2020; v1 submitted 15 January, 2020;
originally announced January 2020.
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Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt
Authors:
Michaela Lammel,
Richard Schlitz,
Kevin Geishendorf,
Denys Makarov,
Tobias Kosub,
Savio Fabretti,
Helena Reichlova,
Rene Huebner,
Kornelius Nielsch,
Andy Thomas,
Sebastian T. B. Goennenwein
Abstract:
The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposit…
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The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposited yttrium iron garnet/platinum thin film bilayers as a function of the orientation and the amplitude of an externally applied magnetic field. Structural and magnetic characterization show no evidence for crystalline order or spontaneous magnetization in the yttrium iron garnet layer. Nevertheless, we observe a clear magnetoresistance response with a dependence on the magnetic field orientation characteristic for the SMR. We propose two models for the origin of the SMR response in paramagnetic insulator/Pt heterostructures. The first model describes the SMR of an ensemble of non-interacting paramagnetic moments, while the second model describes the magnetoresistance arising by considering the total net moment. Interestingly, our experimental data are consistently described by the net moment picture, in contrast to the situation in compensated ferrimagnets or antiferromagnets.
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Submitted 28 January, 2019;
originally announced January 2019.
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Magnetoresistance and anomalous Hall effect in micro-ribbons of the magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$
Authors:
Kevin Geishendorf,
Richard Schlitz,
Praveen Vir,
Chandra Shekhar,
Claudia Felser,
Kornelius Nielsch,
Sebastian T. B. Goennenwein,
Andy Thomas
Abstract:
Magnetic Weyl semimetals exhibit intriguing transport phenomena due to their non-trivial band structure. Recent experiments in bulk crystals of the shandite-type Co$_3$Sn$_2$S$_2$ have shown that this material system is a magnetic Weyl semimetal. To access the length scales relevant for chiral transport, it is mandatory to fabricate microstructures of this fascinating compound. We therefore have c…
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Magnetic Weyl semimetals exhibit intriguing transport phenomena due to their non-trivial band structure. Recent experiments in bulk crystals of the shandite-type Co$_3$Sn$_2$S$_2$ have shown that this material system is a magnetic Weyl semimetal. To access the length scales relevant for chiral transport, it is mandatory to fabricate microstructures of this fascinating compound. We therefore have cut micro-ribbons (typical size $0.3~\times~3~\times~50$μ$m^3$) from Co$_3$Sn$_2$S$_2$ single crystals using a focused beam of Ga$^{2+}$-ions and investigated the impact of the sample dimensions and possible surface doping on the magnetotransport properties. The large intrinsic anomalous Hall effect observed in the micro ribbons is quantitatively consistent with the one in bulk samples. Our results show that focused ion beam cutting can be used for nano-patterning single crystalline Co$_3$Sn$_2$S$_2$, enabling future transport experiments in complex microstructures of this Weyl semimetal.
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Submitted 24 December, 2018;
originally announced December 2018.
