Segregation to grain boundaries in disordered systems: an application to a Ni-based multi-component alloy
Authors:
Dominik Gehringer,
Lorenz Romaner,
David Holec
Abstract:
Segregation to defects, in particular to grain boundaries (GBs), is an unavoidable phenomenon leading to changed material behavior over time. With the increase of available computational power, unbiased quantum-mechanical predictions of segregation energies, which feed classical thermodynamics models of segregation (e.g., McLean isotherm), become available. In recent years, huge progress towards p…
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Segregation to defects, in particular to grain boundaries (GBs), is an unavoidable phenomenon leading to changed material behavior over time. With the increase of available computational power, unbiased quantum-mechanical predictions of segregation energies, which feed classical thermodynamics models of segregation (e.g., McLean isotherm), become available. In recent years, huge progress towards predictions closely resembling experimental observations was made by considering the statistical nature of the segregation process due to competing segregation sites at a single GB and/or many different types of co-existing GBs. In the present work, we further expand this field by explicitly showing how compositional disorder, present in real engineering alloys (e.g. steels or Ni-based superalloys), gives rise to a spectrum of segregation energies. With the example of a $Σ5$ GB in a Ni-based model alloy (Ni-Co-Cr-Ti-Al), we show that the segregation energies of Fe, Mn, W, Nb, and Zr are significantly different from those predicted for pure elemental Ni. We further use the predicted segregation energy spectra in a statistical evaluation of GB enrichment, which allows for extracting segregation enthalpy and segregation entropy terms related to the chemical complexity in multi-component alloys.
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Submitted 4 February, 2025; v1 submitted 16 July, 2024;
originally announced July 2024.
Graphene on silicon: effects of the silicon surface orientation on the work function and carrier density of graphene
Authors:
Y. W. Sun,
D. Holec,
D. Gehringer,
L. Li,
O. Fenwick,
D. J. Dunstan,
C. J. Humphreys
Abstract:
Density functional theory has been employed to study graphene on the (111), (100) and (110) surfaces of silicon (Si) substrates. There are several interesting findings. First, carbon atoms in graphene form covalent bonds with Si atoms, when placed close enough on Si (111) and (100) surfaces, but not on the (110) surface. The presence of a Si (111) surface shifts the Fermi level of graphene into it…
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Density functional theory has been employed to study graphene on the (111), (100) and (110) surfaces of silicon (Si) substrates. There are several interesting findings. First, carbon atoms in graphene form covalent bonds with Si atoms, when placed close enough on Si (111) and (100) surfaces, but not on the (110) surface. The presence of a Si (111) surface shifts the Fermi level of graphene into its conduction band, resulting in an increase of the work function by 0.29 eV and of the electron density by three orders of magnitude. The carrier density of graphene can also be increased by eighty times on a Si (100) substrate without doping, due to the modification of the density of states near the Dirac point. No interfacial covalent bond can be formed on Si (110). These striking effects that different orientations of a silicon substrate can have on the properties of graphene are related to the surface density of the silicon surface. Applying the results to a real device of a specific orientation requires further consideration of surface reconstructions, lattice mismatch, temperature, and environmental effects.
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Submitted 12 July, 2021; v1 submitted 6 October, 2020;
originally announced October 2020.
