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Resonant and Anti-resonant Exciton-Phonon Coupling in Quantum Dot Molecules
Authors:
Michelle Lienhart,
Krzysztof Gawarecki,
Markus Stöcker,
Frederik Bopp,
Charlotte Cullip,
Nadeem Akhlaq,
Christopher Thalacker,
Johannes Schall,
Sven Rodt,
Arne Ludwig,
Dirk Reuter,
Stephan Reitzenstein,
Kai Müller,
Paweł Machnikowski,
Jonathan J. Finley
Abstract:
Optically active quantum dot molecules (QDMs) can host multi-spin quantum states with the potential for the deterministic generation of photonic graph states with tailored entanglement structures. Their usefulness for the generation of such non-classical states of light is determined by orbital and spin decoherence mechanisms, particularly phonon-mediated processes dominant at energy scales up to…
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Optically active quantum dot molecules (QDMs) can host multi-spin quantum states with the potential for the deterministic generation of photonic graph states with tailored entanglement structures. Their usefulness for the generation of such non-classical states of light is determined by orbital and spin decoherence mechanisms, particularly phonon-mediated processes dominant at energy scales up to a few millielectronvolts. Here, we directly measure the spectral function of orbital phonon relaxation in a QDM and benchmark our findings against microscopic kp theory. Our results reveal phonon-mediated relaxation rates exhibiting pronounced resonances and anti-resonances, with rates ranging from several ten ns$^{-1}$ to tens of $μ$s$^{-1}$. Comparison with a kinetic model reveals the voltage (energy) dependent phonon coupling strength and fully explains the interplay between phonon-assisted relaxation and radiative recombination. These anti-resonances can be leveraged to increase the lifetime of energetically unfavorable charge configurations needed for realizing efficient spin-photon interfaces and multi-dimensional cluster states.
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Submitted 14 May, 2025;
originally announced May 2025.
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Optical Activity of Group III-V Quantum Dots Directly Embedded in Silicon
Authors:
M. Gawełczyk,
K. Gawarecki
Abstract:
Optically active III-V group semiconductor quantum dots (QDs) are the leading element of the upcoming safe quantum communication. However, the entire electronic and IT infrastructure relies on silicon-based devices, with silicon also providing a natural platform for photonic integration. Combining semiconductor optics with silicon electronics is thus a major technological challenge. This obstacle…
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Optically active III-V group semiconductor quantum dots (QDs) are the leading element of the upcoming safe quantum communication. However, the entire electronic and IT infrastructure relies on silicon-based devices, with silicon also providing a natural platform for photonic integration. Combining semiconductor optics with silicon electronics is thus a major technological challenge. This obstacle cannot be directly solved because silicon is optically inactive. Interfacing III-V quantum dots with silicon is thus a sought-after solution. A radical approach is to embed III-V material grains directly into silicon. The first realization of such technology was developed, and it gave InAs and core-shell InAs/GaAs QDs embedded in Si with bright and narrow single-QD emission lines. No theory has been given, though, and, as we show here, it is not even obvious if and how such QDs can be optically active. We first use general arguments, also supported by atomistic calculations, that InAs/Si QDs cannot confine both carrier types unless the structural strain is mostly relaxed, meaning many defects at the interface. This explains the lack of light emission from those dots. Then we show that the InAs/GaAs/Si QDs can confine both carrier types. Their electron states are, however, highly influenced by $k$-space valley mixing, which impacts emission spectra and deteriorates optical properties. We propose to overcome this by adding an additional wider-bandgap material layer.
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Submitted 29 April, 2025;
originally announced April 2025.
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Electronic and spectral properties of Ge1-xSnx quantum dots: an atomistic study
Authors:
Krzysztof Gawarecki,
Jakub Ziembicki,
Paweł Scharoch,
Robert Kudrawiec
Abstract:
In this paper, we study theoretically the electron and spectral properties of Ge1-xSnx systems, including alloys, cubic- and spherical quantum dots. The single-particle electron and hole states are calculated within the sp3d5s* tight-binding approach and used in further modeling of the optical properties. We systematically study the interplay of Sn-driven indirect-direct band-gap transition and th…
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In this paper, we study theoretically the electron and spectral properties of Ge1-xSnx systems, including alloys, cubic- and spherical quantum dots. The single-particle electron and hole states are calculated within the sp3d5s* tight-binding approach and used in further modeling of the optical properties. We systematically study the interplay of Sn-driven indirect-direct band-gap transition and the quantum confinement effect in systems of reduced dimensionality. We demonstrate the regime of sizes and composition, where the ground state in Ge1-xSnx quantum dot is optically active. Finally, we calculate absorbance spectra in experimentally-relevant colloidal quantum dots and demonstrate a satisfactory agreement with experimental data.
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Submitted 19 June, 2024; v1 submitted 30 November, 2023;
originally announced November 2023.
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Material gain and eight-band k.p description for selected perovskites
Authors:
Krzysztof Gawarecki,
Michał Wiśniewski,
Maciej Polak,
Robert Kudrawiec,
Marta Gładysiewicz
Abstract:
In this work, we present a ready-to-use symmetry invariant expansion form of the eight-band k.p Hamiltonian for inorganic and organic metal halide perovskites (CsPbX$_3$ and MAPbX$_3$ with $X = \{$Cl, Br, I$\}$). We use the k.p model to calculate the electronic band structures for perovskite materials of cubic and pseudo-cubic phase. In order to find respective parameters, the band structures of c…
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In this work, we present a ready-to-use symmetry invariant expansion form of the eight-band k.p Hamiltonian for inorganic and organic metal halide perovskites (CsPbX$_3$ and MAPbX$_3$ with $X = \{$Cl, Br, I$\}$). We use the k.p model to calculate the electronic band structures for perovskite materials of cubic and pseudo-cubic phase. In order to find respective parameters, the band structures of considered materials were obtained within state-of-the-art density functional theory and used next as targets to adjust the k.p bands and determine the values of k.p parameters. The calculated band structures were used to obtain the material gain for bulk crystals (CsPbCl$_3$, CsPbBr$_3$, CsPbI$_3$, MAPbCl$_3$, MAPbBr$_3$ and MAPbI$_3$) which is compared with the material gain in well-established III-V semiconductors. It was found that for these perovskites a positive material gain appears at lower carrier density than for the reference materials (GaAs and InP). We demonstrate that from the point of view of the electronic band structure, the studied perovskites are very promising gain medium for lasers.
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Submitted 12 June, 2024; v1 submitted 14 June, 2023;
originally announced June 2023.
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Controlled Coherent Coupling in a Quantum Dot Molecule Revealed by Ultrafast Four-Wave Mixing Spectroscopy
Authors:
Daniel Wigger,
Johannes Schall,
Marielle Deconinck,
Nikolai Bart,
Paweł Mrowiński,
Mateusz Krzykowski,
Krzysztof Gawarecki,
Martin von Helversen,
Ronny Schmidt,
Lucas Bremer,
Frederik Bopp,
Dirk Reuter,
Andreas D. Wieck,
Sven Rodt,
Julien Renard,
Gilles Nogues,
Arne Ludwig,
Paweł Machnikowski,
Jonathan J. Finley,
Stephan Reitzenstein,
Jacek Kasprzak
Abstract:
Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical s…
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Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical spectroscopy, we here report on the first demonstration of a coherently controlled inter-dot tunnel-coupling focusing on the quantum coherence of the optically active trion transitions. We employ ultrafast four-wave mixing spectroscopy to resonantly generate a quantum coherence in one trion complex, transfer it to and probe it in another trion configuration. With the help of theoretical modelling on different levels of complexity we give an instructive explanation of the underlying coupling mechanism and dynamical processes.
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Submitted 20 April, 2023;
originally announced April 2023.
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Structural symmetry-breaking to explain radiative Auger transitions in self-assembled quantum dots
Authors:
Krzysztof Gawarecki,
Clemens Spinnler,
Liang Zhai,
Giang N. Nguyen,
Arne Ludwig,
Richard J. Warburton,
Matthias C. Löbl,
Doris E. Reiter,
Paweł Machnikowski
Abstract:
The optical spectrum of a quantum dot is typically dominated by the fundamental transition between the lowest-energy configurations. However, the radiative Auger process can result in additional red-shifted emission lines. The origin of these lines is a combination of Coulomb interaction and symmetry-breaking in the quantum dot. In this paper, we present measurements of such radiative Auger lines…
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The optical spectrum of a quantum dot is typically dominated by the fundamental transition between the lowest-energy configurations. However, the radiative Auger process can result in additional red-shifted emission lines. The origin of these lines is a combination of Coulomb interaction and symmetry-breaking in the quantum dot. In this paper, we present measurements of such radiative Auger lines for a range of InGaAs/GaAs self-assembled quantum dots and use a tight-binding model with a configuration interaction approach to explain their appearance. Introducing a composition fluctuation cluster in the dot, our calculations show excellent agreement with measurements. We relate our findings to group theory explaining the origin of the additional emission lines. Our model and results give insight into the interplay between the symmetry breaking in a quantum dot and the position and strength of the radiative Auger lines.
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Submitted 25 August, 2022;
originally announced August 2022.
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Invariant expansion of the 30-band k.p model and its parameters for III-V compounds
Authors:
Krzysztof Gawarecki,
Paweł Scharoch,
Michał Wiśniewski,
Jakub Ziembicki,
Herbert S. Mączko,
Marta Gładysiewicz,
Robert Kudrawiec
Abstract:
In this work we derive a ready-to-use symmetry invariant expansion of the full-zone 30-band k.p Hamiltonian for the Td point group. In order to find respective parameters, the band structures of III-V materials were calculated within a state-of-the-art Density Functional Theory (DFT) approach and used next as targets to adjust the k.p bands. A satisfactory agreement of the k.p model with the DFT b…
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In this work we derive a ready-to-use symmetry invariant expansion of the full-zone 30-band k.p Hamiltonian for the Td point group. In order to find respective parameters, the band structures of III-V materials were calculated within a state-of-the-art Density Functional Theory (DFT) approach and used next as targets to adjust the k.p bands. A satisfactory agreement of the k.p model with the DFT band structures, for all the tested zinc blende III-V semiconductors, has been achieved. Values of many of the parameters have not been known so far. We also compare the fitted k.p parameters with the values calculated using momentum matrix elements obtained directly from the DFT.
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Submitted 10 January, 2022;
originally announced January 2022.
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Electron g-factor in nanostructures: continuum media and atomistic approach
Authors:
Krzysztof Gawarecki,
Michał Zieliński
Abstract:
We report studies of $k$-dependent Landé $g$-factor, performed by both continuous media approximation k.p method, and atomistic tight-binding sp$^3$d$^5$s$^*$ approach. We propose an effective, mesoscopic model for InAs that we are able to successfully compare with atomistic calculations, for both very small and very large nanostructures, with a number of atoms reaching over 60 million. Finally, f…
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We report studies of $k$-dependent Landé $g$-factor, performed by both continuous media approximation k.p method, and atomistic tight-binding sp$^3$d$^5$s$^*$ approach. We propose an effective, mesoscopic model for InAs that we are able to successfully compare with atomistic calculations, for both very small and very large nanostructures, with a number of atoms reaching over 60 million. Finally, for nanostructure dimensions corresponding to near-zero $g$-factor we report electron spin states anti-crossing as a function of system size, despite no shape-anisotropy nor strain effects included, and merely due to breaking of atomistic symmetry of cation/anion planes constituting the system.
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Submitted 22 October, 2020; v1 submitted 20 October, 2020;
originally announced October 2020.
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Phonon-assisted relaxation between triplet and singlet states in a self-assembled double quantum dot
Authors:
Krzysztof Gawarecki,
Paweł Machnikowski
Abstract:
We study theoretically phonon-induced spin dynamics of two electrons confined in a self-assembled double quantum dot. We calculate the transition rates and time evolution of occupations for the spin-triplet and spin-singlet states. We characterize the relative importance of various relaxation channels as a function of the electric and magnetic fields. The simulations are based on a model combining…
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We study theoretically phonon-induced spin dynamics of two electrons confined in a self-assembled double quantum dot. We calculate the transition rates and time evolution of occupations for the spin-triplet and spin-singlet states. We characterize the relative importance of various relaxation channels as a function of the electric and magnetic fields. The simulations are based on a model combining the eight-band k.p method and configuration-interaction approach. We show that the electron g-factor mismatch between the Zeeman doublets localized on different dots opens a relatively fast triplet-singlet relaxation channel. We also demonstrate, that the relaxation near the triplet-singlet anticrossing is slowed down up to several orders of magnitude due to vanishing of some relaxation channels.
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Submitted 12 May, 2020;
originally announced May 2020.
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Hole spin-flip transitions in a self-assembled quantum dot
Authors:
Mateusz Krzykowski,
Krzysztof Gawarecki,
Pawel Machnikowski
Abstract:
In this work, we investigate hole spin-flip transitions in a single self-assembled InGaAs/GaAs quantum dot. We find the hole wave functions using the 8-band $kp$ model and calculate phonon-assisted spin relaxation rates for the ground-state Zeeman doublet. We systematically study the importance of various admixture- and direct spin-phonon mechanisms giving rise to the transition rates. We show tha…
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In this work, we investigate hole spin-flip transitions in a single self-assembled InGaAs/GaAs quantum dot. We find the hole wave functions using the 8-band $kp$ model and calculate phonon-assisted spin relaxation rates for the ground-state Zeeman doublet. We systematically study the importance of various admixture- and direct spin-phonon mechanisms giving rise to the transition rates. We show that the biaxial and shear strain constitute dominant spin-admixture coupling mechanisms. Then, we demonstrate that hole spin lifetime can be increased if a quantum dot is covered by a strain-reducing layer. Finally, we show that the spin relaxation can be described by an effective model.
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Submitted 8 February, 2020;
originally announced February 2020.
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Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm
Authors:
Paweł Podemski,
Anna Musiał,
Krzysztof Gawarecki,
Aleksander Maryński,
Przemysław Gontar,
Artem Bercha,
Witold A. Trzeciakowski,
Nicole Srocka,
Tobias Heuser,
David Quandt,
André Strittmatter,
Sven Rodt,
Stephan Reitzenstein,
Grzegorz Sęk
Abstract:
The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between s-shell and p-shell shows an inverse dependence on the emission energy. The experimen…
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The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between s-shell and p-shell shows an inverse dependence on the emission energy. The experimental data are compared with the results of confined states calculations, where the impact of the size and composition in the investigated structures is simulated within the 8-band $\mathbf{k}\cdot\mathbf{p}$ model. On this basis, the experimental observation is attributed mainly to changes in indium content within individual quantum dots, indicating a way of engineering and selecting a desired quantum dot, whose electronic structure is the most suitable for a given nanophotonic application.
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Submitted 17 January, 2020; v1 submitted 14 August, 2019;
originally announced August 2019.
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The importance of second order deformation potentials in modeling of InAs/GaAs nanostructures
Authors:
Krzysztof Gawarecki,
Michał Zieliński
Abstract:
Accurate modeling of electronic properties of nanostructures is a challenging theoretical problem. Methods making use of continuous media approximation, such as k.p, sometimes struggle to reproduce results obtained with more accurate atomistic approaches. On the contrary, atomistic schemes generally come with a substantially larger cost of computation. Here, we bridge between these two approaches…
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Accurate modeling of electronic properties of nanostructures is a challenging theoretical problem. Methods making use of continuous media approximation, such as k.p, sometimes struggle to reproduce results obtained with more accurate atomistic approaches. On the contrary, atomistic schemes generally come with a substantially larger cost of computation. Here, we bridge between these two approaches by taking 8-band k.p method augmented with non-linear strain terms fit to reproduce sp3d5s* tight-binding results. We illustrate this method on the example of electron and hole states confined in quantum wells and quantum dots of photonics applications relevant InAs/GaAs material system, and demonstrate a good agreement of a non-linear k.p scheme with empirical tight-binding method. We discuss limits of our procedure as well as provide non-linear 8-band k.p parameter sets for InAs and GaAs. Finally, we propose a parameterization for effective term used to improve the accuracy of the standard effective mass method.
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Submitted 3 August, 2019;
originally announced August 2019.
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Tunneling-related electron spin relaxation in self-assembled quantum-dot molecules
Authors:
Michał Gawełczyk,
Krzysztof Gawarecki
Abstract:
We study theoretically spin relaxation during phonon-assisted tunneling of a single electron in self-assembled InAs/GaAs quantum-dot molecules formed by vertically stacked dots. We find that the spin-flip tunneling rate may be as high as 1% of the spin-conserving one. By studying the dependence of spin relaxation rate on external fields, we show that the process is active at a considerable rate ev…
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We study theoretically spin relaxation during phonon-assisted tunneling of a single electron in self-assembled InAs/GaAs quantum-dot molecules formed by vertically stacked dots. We find that the spin-flip tunneling rate may be as high as 1% of the spin-conserving one. By studying the dependence of spin relaxation rate on external fields, we show that the process is active at a considerable rate even without the magnetic field, and scales with the latter differently than the relaxation in a Zeeman doublet. Utilizing a multiband $\boldsymbol{k}\cdot\boldsymbol{p}$ theory, we selectively investigate the impact of various spin-mixing terms in the electron energy and carrier-phonon interaction Hamiltonians. As a result, we identify the main contribution to come from the Dresselhaus spin-orbit interaction, which is responsible for the zero-field effect. At magnetic fields above $\sim$ 15 T, this is surpassed by other contributions due to the structural shear strain. We also study the impact of the sample morphology and determine that the misalignment of the dots may enhance relaxation rate by over an order of magnitude. Finally, via virtual tunneling at nonzero temperature, the process in question also affects stationary electrons in tunnel-coupled structures and provides a Zeeman-doublet spin relaxation channel even without the magnetic field.
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Submitted 5 June, 2021; v1 submitted 26 February, 2019;
originally announced February 2019.
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Phonon-assisted carrier tunneling in coupled quantum dot systems with hyperfine-induced spin flip
Authors:
Paweł Karwat,
Krzysztof Gawarecki,
Paweł Machnikowski
Abstract:
We calculate the rates of phonon-assisted hyperfine spin flips during electron and hole tunneling between quantum dots in a self-assembled quantum dot molecule. We show that the hyperfine process dominates over the spin-orbit-induced spin relaxation in magnetic fields up to a few Tesla for electrons, while for holes this cross-over takes place at field magnitudes of a fraction of Tesla, upon the a…
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We calculate the rates of phonon-assisted hyperfine spin flips during electron and hole tunneling between quantum dots in a self-assembled quantum dot molecule. We show that the hyperfine process dominates over the spin-orbit-induced spin relaxation in magnetic fields up to a few Tesla for electrons, while for holes this cross-over takes place at field magnitudes of a fraction of Tesla, upon the assumption of a large $d$-shell admixture to the valence band state, resulting in a strong transverse hyperfine coupling. The interplay of the two spin-flip mechanisms leads to a minimum of the spin-flip probability, which is in principle experimentally measurable and can be used as a test for the presence of substantial transverse hyperfine couplings in the valence band.
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Submitted 15 January, 2021; v1 submitted 25 February, 2019;
originally announced February 2019.
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Hyperfine interaction for holes in quantum dots: k.p model
Authors:
Paweł Machnikowski,
Krzysztof Gawarecki,
Łukasz Cywiński
Abstract:
We formulate the multi-band kp theory of hyperfine interactions for semiconductor nanostructures in the envelope function approximation. We apply this theoretical description to the fluctuations of the longitudinal and transverse Overhauser field experienced by a hole for a range of InGaAs quantum dots of various compositions and geometries. We find that for a wide range of values of $d$-shell adm…
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We formulate the multi-band kp theory of hyperfine interactions for semiconductor nanostructures in the envelope function approximation. We apply this theoretical description to the fluctuations of the longitudinal and transverse Overhauser field experienced by a hole for a range of InGaAs quantum dots of various compositions and geometries. We find that for a wide range of values of $d$-shell admixture to atomic states forming the top of the valence band, the transverse Overhauser field caused by this admixture is of the same order of magnitude as the longitudinal one, and band mixing adds only a minor correction to this result. In consequence, the kp results are well reproduced by a simple box model with the effective number of ions determined by the wave function participation number, as long as the hole is confined in the compositionally uniform volume of the dot, which holds in a wide range of parameters, excluding very flat dots.
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Submitted 1 August, 2019; v1 submitted 25 February, 2019;
originally announced February 2019.
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Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths
Authors:
Paweł Mrowiński,
Anna Musiał,
Krzysztof Gawarecki,
Łukasz Dusanowski,
Tobias Heuser,
Nicole Srocka,
David Quandt,
André Strittmatter,
Sven Rodt,
Stephan Reitzenstein,
Grzegorz Sęk
Abstract:
Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of…
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Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of excitation-power-dependent and polarization-resolved microphotoluminescence and further compared with the results of confined states calculations employing the 8-band kp theory combined with the configuration interaction method. The origin of excitonic complexes has been exemplarily confirmed based on magnetooptical and correlation spectroscopy study. Understanding the influence of structural parameters and compositions (of QDs themselves as well as in the neighbouring strain reducing layer) allows to distinguish which of them are crucial to control the emission wavelength to achieve the telecommunication spectral range or to affect binding energies of the fundamental excitonic complexes. The obtained results provide deeper knowledge on control and on limitations of the investigated structures in terms of good spectral isolation of individual optical transitions and the spatial confinement that are crucial in view of QD applications in single-photon sources of high purity at telecom wavelengths.
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Submitted 11 August, 2019; v1 submitted 4 November, 2018;
originally announced November 2018.
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Spin-orbit coupling and spin relaxation of hole states in [001]- and [111]-orientedquantum dots of various geometry
Authors:
Krzysztof Gawarecki,
Mateusz Krzykowski
Abstract:
We study the influence of spin-orbit coupling on the hole states in InAs/GaAs quantum dots grown on [001]- and [111]-oriented substrates belonging to symmetry point groups: C2v, C3v and D2d. We investigate the impact of various spin-orbit mechanisms on the strength of coupling between s- and p-shell states, which is a significant spin-flip channel in quantum dots. We calculate spin relaxation rate…
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We study the influence of spin-orbit coupling on the hole states in InAs/GaAs quantum dots grown on [001]- and [111]-oriented substrates belonging to symmetry point groups: C2v, C3v and D2d. We investigate the impact of various spin-orbit mechanisms on the strength of coupling between s- and p-shell states, which is a significant spin-flip channel in quantum dots. We calculate spin relaxation rates between the states of lowest Zeeman doublet and show that the [111]-oriented structure offers one order of magnitude slower relaxation compared to the usual [001]-oriented self-assembled QD. The magnetic-field dependence of the hole states is calculated using multiband (up to 14 bands) k.p model. We identify the irreducible representations linked to the states and discuss the selection rules, which govern the avoided-crossing pattern in magnetic-field dependence of the energy levels. We show that dominant contribution to the coupling between some of these states comes from the shear strain. On the other hand, we demonstrate no coupling between s- and p-shell states in the [111]-oriented structure.
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Submitted 20 February, 2019; v1 submitted 24 September, 2018;
originally announced September 2018.
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Dominant role of the shear strain induced admixture in spin-flip processes in self-assembled quantum dots
Authors:
Adam Mielnik-Pyszczorski,
Krzysztof Gawarecki,
Michał Gawełczyk,
Paweł Machnikowski
Abstract:
We study theoretically the spin-flip relaxation processes for a single electron in a self-assembled InAs/GaAs quantum dot, using an 8-band kp theory in the envelope function approximation. We show that the dominating channel of spin relaxation is spin admixture induced by symmetry-breaking shear strain, which can be mapped onto two effective spin-phonon terms in a conduction band (effective mass)…
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We study theoretically the spin-flip relaxation processes for a single electron in a self-assembled InAs/GaAs quantum dot, using an 8-band kp theory in the envelope function approximation. We show that the dominating channel of spin relaxation is spin admixture induced by symmetry-breaking shear strain, which can be mapped onto two effective spin-phonon terms in a conduction band (effective mass) Hamiltonian that have a similar structure and interfere constructively. Unlike the Dresselhaus coupling that dominates spin relaxation in larger, unstrained dots, the shear strain contribution cannot be modeled by a unique standard term in the Hamiltonian but rather relies on the actual strain distribution in the quantum dot.
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Submitted 9 July, 2018; v1 submitted 11 December, 2017;
originally announced December 2017.
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Spin-orbit coupling and magnetic field dependence of carriers states in a self-assembled quantum dot
Authors:
Krzysztof Gawarecki
Abstract:
In this work I investigate the influence of spin-orbit coupling on the magnetic field dependence of carrier states in a self-assembled quantum dot. I calculate the hole energy levels using the 6, 8 and 14 band k.p model. Through a detailed study within these models, I extract the information about the impact of various spin-orbital coupling channels in the hole p-shell. I also show that complicate…
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In this work I investigate the influence of spin-orbit coupling on the magnetic field dependence of carrier states in a self-assembled quantum dot. I calculate the hole energy levels using the 6, 8 and 14 band k.p model. Through a detailed study within these models, I extract the information about the impact of various spin-orbital coupling channels in the hole p-shell. I also show that complicated magnetic field dependence of the hole p-shell resulting from numerical simulations, can be very well fitted using a phenomenological model. I compare the electron and hole g-factors calculated within 8 and 14 band k.p models and show that these methods give reasonably good agreement.
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Submitted 18 November, 2017;
originally announced November 2017.
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Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures
Authors:
M. Gawełczyk,
M. Syperek,
A. Maryński,
P. Mrowiński,
Ł. Dusanowski,
K. Gawarecki,
J. Misiewicz,
A. Somers,
J. P. Reithmaier,
S. Höfling,
G. Sęk
Abstract:
We present experimental and theoretical investigation of exciton recombination dynamics and the related polarization of emission in highly in-plane asymmetric nanostructures. Considering general asymmetry- and size-driven effects, we illustrate them with a detailed analysis of InAs/AlGaInAs/InP elongated quantum dots. These offer a widely varied confinement characteristics tuned by size and geomet…
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We present experimental and theoretical investigation of exciton recombination dynamics and the related polarization of emission in highly in-plane asymmetric nanostructures. Considering general asymmetry- and size-driven effects, we illustrate them with a detailed analysis of InAs/AlGaInAs/InP elongated quantum dots. These offer a widely varied confinement characteristics tuned by size and geometry that are tailored during the growth process, which leads to emission in the application-relevant spectral range of 1.25-1.65 μm. By exploring the interplay of the very shallow hole confining potential and widely varying structural asymmetry, we show that a transition from the strong through intermediate to even weak confinement regime is possible in nanostructures of this kind. This has a significant impact on exciton recombination dynamics and the polarization of emission, which are shown to depend not only on details of the calculated excitonic states but also on excitation conditions in the photoluminescence experiments. We estimate the impact of the latter and propose a way to determine the intrinsic polarization-dependent exciton light-matter coupling based on kinetic characteristics.
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Submitted 8 January, 2018; v1 submitted 21 September, 2017;
originally announced September 2017.
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Controllable electron spin dephasing due to phonon state distinguishability in a coupled quantum dot system
Authors:
Michał Gawełczyk,
Mateusz Krzykowski,
Krzysztof Gawarecki,
Paweł Machnikowski
Abstract:
We predict a spin pure dephasing channel in electron relaxation between states with unequal Zeeman splittings, exemplified by a spin-preserving electron tunneling between quantum dots in a magnetic field. The dephasing is caused by a mismatch in electron $g$-factors in the dots leading to distinguishability of phonons emitted during tunneling with opposite spins. Combining multiband…
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We predict a spin pure dephasing channel in electron relaxation between states with unequal Zeeman splittings, exemplified by a spin-preserving electron tunneling between quantum dots in a magnetic field. The dephasing is caused by a mismatch in electron $g$-factors in the dots leading to distinguishability of phonons emitted during tunneling with opposite spins. Combining multiband $\boldsymbol{k}{\cdot}\boldsymbol{p}$ modeling and dynamical simulations via a Master equation we show that this fundamental effect of spin measurement effected by the phonon bath may be widely controlled by the size and composition of the dots or on demand, via tuning of external fields. By comparing the numerically simulated degree of dephasing with the predictions of general theory based on distinguishability of environment states, we show that the proposed mechanism is the dominant phonon-related spin dephasing channel and may limit spin coherence time in tunnel-coupled structures at cryogenic temperatures.
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Submitted 3 August, 2018; v1 submitted 19 July, 2017;
originally announced July 2017.
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Accuracy of effective mass equation for a single and double cylindrical quantum dot
Authors:
A. Mielnik-Pyszczorski,
K. Gawarecki,
P. Machnikowski
Abstract:
In this contribution we study the accuracy of various forms of electron effective mass equation in reproducing spectral and spin-related features of quantum dot systems. We compare the results of the standard 8 band k.p model to those obtained from effective mass equations obtained by perturbative elimination procedures in various approximations for a cylindrical quantum dot or a system of two suc…
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In this contribution we study the accuracy of various forms of electron effective mass equation in reproducing spectral and spin-related features of quantum dot systems. We compare the results of the standard 8 band k.p model to those obtained from effective mass equations obtained by perturbative elimination procedures in various approximations for a cylindrical quantum dot or a system of two such dots. We calculate the splitting of electronic shells, the electron g-factor and spin-orbit induced spin mixing and show that for a cylindrical dot the g-factor is reproduced very exactly, while for the two other quantities the effective mass equation is much less accurate.
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Submitted 24 June, 2017;
originally announced June 2017.
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Limited accuracy of conduction band effective mass equations for semiconductor quantum dots
Authors:
Adam Mielnik-Pyszczorski,
Krzysztof Gawarecki,
Paweł Machnikowski
Abstract:
Effective mass equations are the simplest models of carrier states in a semiconductor structures that reduce the complexity of a solid-state system to Schrödinger- or Pauli-like equations resempling those well known from quantum mechanics textbooks. Here we present a systematic derivation of a conduction-band effective mass equation for a self-assembled semiconductor quantum dot in a magnetic fiel…
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Effective mass equations are the simplest models of carrier states in a semiconductor structures that reduce the complexity of a solid-state system to Schrödinger- or Pauli-like equations resempling those well known from quantum mechanics textbooks. Here we present a systematic derivation of a conduction-band effective mass equation for a self-assembled semiconductor quantum dot in a magnetic field from the 8-band kp theory. The derivation allows us to classify various forms of the effective mass equations in terms of a hierarchy of approximations. We assess the accuracy of the approximations in calculating selected spectral and spin-related characteristics. We indicate the importance of preserving the off-diagonal terms of the valence band Hamiltonian and argue that an effective mass theory cannot reach satisfactory accuracy without self-consistently including non-parabolicity corrections and renormalization of kp parameters. Quantitative comparison with the 8-band kp results supports the phenomenological Roth-Lax-Zwerdling formula for the g-factor in a nanostructure.
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Submitted 28 March, 2018; v1 submitted 13 June, 2017;
originally announced June 2017.
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Polaron resonances in two vertically stacked quantum dots
Authors:
Paweł Karwat,
Krzysztof Gawarecki,
Paweł Machnikowski
Abstract:
In this work, we present a theoretical study of polaron states in a double quantum dot system. We present realistic calculations which combine 8 band \kp model, configuration interaction approach and collective modes method. We investigate the dependence of polaron energy branches on axial electric field. We show that coupling between carriers and longitudinal optical phonons via Fröhlich interact…
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In this work, we present a theoretical study of polaron states in a double quantum dot system. We present realistic calculations which combine 8 band \kp model, configuration interaction approach and collective modes method. We investigate the dependence of polaron energy branches on axial electric field. We show that coupling between carriers and longitudinal optical phonons via Fröhlich interaction leads to qualitative and quantitative reconstruction of the optical spectra. In particular, we study the structure of resonances between the states localized in different dots. We show that $p$-shell states are strongly coupled to the phonon replicas of $s$-shell states, in contrast to the weak direct $s$-$p$ coupling. We discuss also the dependence of the phonon-assisted tunnel coupling strength on the separation between the dots.
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Submitted 23 January, 2017;
originally announced January 2017.
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Coulomb mediated hybridization of excitons in artificial molecules
Authors:
P. -L. Ardelt,
K. Gawarecki,
K. Müller,
A. M. Waeber,
A. Bechtold,
K. Oberhofer,
J. M. Daniels,
F. Klotz,
M. Bichler,
T. Kuhn,
H. J. Krenner,
P. Machnikowski,
G. Abstreiter,
J. J. Finley
Abstract:
We report the Coulomb mediated hybridization of excitonic states in an optically active, artificial quantum dot molecule. By probing the optical response of the artificial molecule as a function of the static electric field applied along the molecular axis, we observe unexpected avoided level crossings that do not arise from the dominant single particle tunnel coupling. We identify a new few-parti…
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We report the Coulomb mediated hybridization of excitonic states in an optically active, artificial quantum dot molecule. By probing the optical response of the artificial molecule as a function of the static electric field applied along the molecular axis, we observe unexpected avoided level crossings that do not arise from the dominant single particle tunnel coupling. We identify a new few-particle coupling mechanism stemming from Coulomb interactions between different neutral exciton states. Such Coulomb resonances hybridize the exciton wave function over four different electron and hole single-particle orbitals. Comparisons of experimental observations with microscopic 8-band $k \cdot p$ calculations taking into account a realistic quantum dot geometry show good agreement and reveal that the Coulomb resonances arise from broken symmetry in the artificial molecule.
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Submitted 29 September, 2015;
originally announced September 2015.
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Phonon-assisted tunnelling of electrons in a quantum well-quantum dot injection structure
Authors:
Adam Mielnik-Pyszczorski,
Krzysztof Gawarecki,
Paweł Machnikowski
Abstract:
We study theoretically phonon-assisted relaxation and tunnelling in a system composed of a quantum dot which is coupled to a quantum well. Within the kp method combined with the Löwdin elimination, we calculate the electron states. We calculate acoustic phonon-assisted relaxation rates between the states in the quantum well and in the quantum dot and study the resulting electron kinetics. We show…
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We study theoretically phonon-assisted relaxation and tunnelling in a system composed of a quantum dot which is coupled to a quantum well. Within the kp method combined with the Löwdin elimination, we calculate the electron states. We calculate acoustic phonon-assisted relaxation rates between the states in the quantum well and in the quantum dot and study the resulting electron kinetics. We show that transition efficiency crucially depends on the system geometry. We show also that under some conditions, transition efficiency can decrease with the temperature.
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Submitted 20 May, 2014;
originally announced May 2014.
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Electron states in a double quantum dot with broken axial symmetry
Authors:
Krzysztof Gawarecki,
Paweł Machnikowski,
Tilmann Kuhn
Abstract:
We study theoretically the electron states in a system of two vertically stacked quantum dots. We investigate the influence of the geometrical symmetry breaking (caused by the displacement as well as the ellipticity of the dots) on the electron states. Our modeling is based on the 8-band kp method. We show that the absence of axial symmetry of the system leads to a coupling of the s state from one…
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We study theoretically the electron states in a system of two vertically stacked quantum dots. We investigate the influence of the geometrical symmetry breaking (caused by the displacement as well as the ellipticity of the dots) on the electron states. Our modeling is based on the 8-band kp method. We show that the absence of axial symmetry of the system leads to a coupling of the s state from one dot with the p and d states from the other. Our findings indicate, that this coupling can produce a strong energy splitting at resonance (on the order of several meV) in the case of closely spaced quantum dots. Furthermore, we show that in the presence of a piezoelectric field, the direction of the displacement plays an important role in the character of the coupling.
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Submitted 11 February, 2014;
originally announced February 2014.
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Adiabatic rapid passage in quantum dots: phonon-assisted decoherence and biexciton generation
Authors:
K. Gawarecki,
S. Lüker,
D. E. Reiter,
T. Kuhn,
M. Glässl,
V. M. Axt,
A. Grodecka-Grad,
P. Machnikowski
Abstract:
We study the evolution of a quantum dot controlled by a frequency-swept (chirped), linearly polarized laser pulse in the presence of carrier-phonon coupling. The final occupation of the exciton state is limited both due to phonon-induced transitions between the adiabatic spectral branches and because of phonon-assisted transitions to the biexciton state. When the biexciton shift is large enough, t…
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We study the evolution of a quantum dot controlled by a frequency-swept (chirped), linearly polarized laser pulse in the presence of carrier-phonon coupling. The final occupation of the exciton state is limited both due to phonon-induced transitions between the adiabatic spectral branches and because of phonon-assisted transitions to the biexciton state. When the biexciton shift is large enough, the quantum dot can be modeled as a two-level system, which corresponds to excitation with circularly polarized light. For this case, we compare different methods of simulations: (i) a time convolutionless method, (ii) correlation expansion and (iii) path integrals. We show that results obtained from these methods agree perfectly at low temperatures.
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Submitted 8 November, 2013; v1 submitted 22 October, 2012;
originally announced October 2012.
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Biexciton state preparation in a quantum dot via adiabatic rapid passage: comparison between two control protocols and impact of phonon-induced dephasing
Authors:
M. Glässl,
A. Barth,
K. Gawarecki,
P. Machnikowski,
M. D. Croitoru,
S. Lüker,
D. E. Reiter,
T. Kuhn,
V. M. Axt
Abstract:
We investigate theoretically under which conditions a stable and high-fidelity preparation of the biexciton state in a quantum dot can be realized by means of adiabatic rapid passage in the presence of acoustic phonon coupling. Our analysis is based on a numerically complete real-time path integral approach and comprises different schemes of optical driving using frequency-swept (chirped) pulses.…
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We investigate theoretically under which conditions a stable and high-fidelity preparation of the biexciton state in a quantum dot can be realized by means of adiabatic rapid passage in the presence of acoustic phonon coupling. Our analysis is based on a numerically complete real-time path integral approach and comprises different schemes of optical driving using frequency-swept (chirped) pulses. We show that depending on the size of the biexciton binding energy, resonant two-photon excitations or two-color schemes can be favorable. It is demonstrated that the carrier-phonon interaction strongly affects the efficiency of the protocols and that a robust preparation of the biexciton is restricted to positive chirps and low temperatures. A considerable increase of the biexciton yield can be achieved realizing temperatures below 4 K.
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Submitted 4 October, 2012;
originally announced October 2012.
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Dephasing in the adiabatic rapid passage in quantum dots: the role of phonon-assisted biexciton generation
Authors:
K. Gawarecki,
S. Lüker,
D. E. Reiter,
T. Kuhn,
M. Glässl,
V. M. Axt,
A. Grodecka-Grad,
P. Machnikowski
Abstract:
We study the evolution of an exciton confined in a quantum dot adiabatically controlled by a frequency-swept (chirped) laser pulse in the presence of carrier-phonon coupling. We focus on the dynamics induced by a linearly polarized beam and analyze the decoherence due to phonon-assisted biexciton generation. We show that if the biexciton state is shifted down by a few meV, as is typically the case…
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We study the evolution of an exciton confined in a quantum dot adiabatically controlled by a frequency-swept (chirped) laser pulse in the presence of carrier-phonon coupling. We focus on the dynamics induced by a linearly polarized beam and analyze the decoherence due to phonon-assisted biexciton generation. We show that if the biexciton state is shifted down by a few meV, as is typically the case, the resulting decoherence is strong even at low temperatures. As a result, efficient state preparation is restricted to a small parameter area corresponding to low temperatures, positive chirps and moderate pulse areas.
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Submitted 12 September, 2012;
originally announced September 2012.
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Phonon Effects on Population Inversion in Quantum Dots: Resonant, Detuned and Frequency-swept Excitations
Authors:
D. E. Reiter,
S. Lüker,
K. Gawarecki,
A. Grodecka-Grad,
P. Machnikowski,
V. M. Axt,
T. Kuhn
Abstract:
The effect of acoustic phonons on different light-induced excitations of a semiconductor quantum dot is investigated. Resonant excitation of the quantum dot leads to Rabi oscillations, which are damped due to the phonon interaction. When the excitation frequency is detuned, an occupation can only occur due to phonon absorption or emission processes. For frequency-swept excitations a population inv…
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The effect of acoustic phonons on different light-induced excitations of a semiconductor quantum dot is investigated. Resonant excitation of the quantum dot leads to Rabi oscillations, which are damped due to the phonon interaction. When the excitation frequency is detuned, an occupation can only occur due to phonon absorption or emission processes. For frequency-swept excitations a population inversion is achieved through adiabatic rapid passage, but the inversion is also damped by phonons. For all three scenarios the influence of the phonons depends non-monotonically on the pulse area.
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Submitted 30 January, 2013; v1 submitted 27 July, 2012;
originally announced July 2012.
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Phonon-assisted relaxation between hole states in quantum dot molecules
Authors:
Krzysztof Gawarecki,
Paweł Machnikowski
Abstract:
We study theoretically phonon-assisted relaxation and inelastic tunneling of holes in a double quantum dot. We derive hole states and relaxation rates from kp Hamiltonians and show that there is a finite distance between the dots where lifetimes of hole states are very long which is related to vanishing tunnel coupling. We show also that the light hole admixture to hole states can considerably aff…
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We study theoretically phonon-assisted relaxation and inelastic tunneling of holes in a double quantum dot. We derive hole states and relaxation rates from kp Hamiltonians and show that there is a finite distance between the dots where lifetimes of hole states are very long which is related to vanishing tunnel coupling. We show also that the light hole admixture to hole states can considerably affect the hole relaxation rates even though its magnitude is very small.
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Submitted 6 February, 2012; v1 submitted 26 October, 2011;
originally announced October 2011.
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Electron states, phonon-assisted relaxation and tunneling in self-assembled quantum dot molecules in an electric field
Authors:
Krzysztof Gawarecki,
Paweł Machnikowski
Abstract:
We present a theoretical analysis of the phonon-assisted relaxation in a system composed of two self-assembled vertically stacked quantum dots. We construct realistic model, which takes into account the geometry and strain distribution in the system. We calculate phonon-assisted relaxation rates between the two lowest states (in one- and two-electron cases). The relaxation rates and energy levels…
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We present a theoretical analysis of the phonon-assisted relaxation in a system composed of two self-assembled vertically stacked quantum dots. We construct realistic model, which takes into account the geometry and strain distribution in the system. We calculate phonon-assisted relaxation rates between the two lowest states (in one- and two-electron cases). The relaxation rates and energy levels are studied as a function of external (axial) electric field and geometry of the structure (dot sizes). We show that the relaxation times can be as low as 1~ps but efficent relaxation occurs only for very finely tuned dots.
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Submitted 9 July, 2010;
originally announced July 2010.
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Phonon-assisted relaxation and tunneling in self-assembled quantum dot molecules
Authors:
Krzysztof Gawarecki,
Michał Pochwała,
Anna Grodecka-Grad,
Paweł Machnikowski
Abstract:
We study theoretically phonon-assisted relaxation processes in a system consisting of one or two electrons confined in two vertically stacked self-assembled quantum dots. The calculation is based on a k.p approximation for single particle wave functions in a strained self-assembled structure. From these, two-particle states are calculated by including the Coulomb interaction and the transition rat…
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We study theoretically phonon-assisted relaxation processes in a system consisting of one or two electrons confined in two vertically stacked self-assembled quantum dots. The calculation is based on a k.p approximation for single particle wave functions in a strained self-assembled structure. From these, two-particle states are calculated by including the Coulomb interaction and the transition rates between the lowest energy eigenstates are derived. We take into account phonon couplings via deformation potential and piezoelectric interaction and show that they both can play a dominant role in different parameter regimes. Within the Fermi golden rule approximation, we calculate the relaxation rates between the lowest energy eigenstates which lead to thermalization on a picosecond time scale in a narrow range of dot sizes.
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Submitted 13 September, 2010; v1 submitted 12 March, 2010;
originally announced March 2010.
