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Selective area epitaxy of in-plane HgTe nanostrcutures on CdTe(001) substrate
Authors:
Nicolas Chaize,
Xavier Baudry,
Pierre-Henri Jouneau,
Eric Gautier,
Jean-Luc Rouvière,
Yves Deblock,
Jimmy Xu,
Maxime Berthe,
Clément Barbot,
Bruno Grandidier,
Ludovic Desplanque,
Hermann Sellier,
Philippe Ballet
Abstract:
Semiconductor nanowires are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique. Here, in-plane HgTe nanostructures are grown thanks to selective area molecular bea…
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Semiconductor nanowires are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique. Here, in-plane HgTe nanostructures are grown thanks to selective area molecular beam epitaxy on a semi-insulating CdTe substrate covered with a patterned SiO$_{\mathrm{2}}$ mask. The shape of these nanostructures is defined by the in-plane orientation of the mask aperture along the <$110$>, <$1\bar{\mathrm{1}}0$>, or <$100$> direction, the deposited thickness, and the growth temperature. Several micron long in-plane nanowires can be achieved as well as more complex nanostructures such as networks, diamond structures or rings. A good selectivity is achieved with very little parasitic growth on the mask even for a growth temperature as low as $140$°C and growth rate up to $0.5$ ML/s. For <$110$> oriented nanowires, the center of the nanostructure exhibits a trapezoidal shape with {$111$}B facets and two grains on the sides, while <$1\bar{\mathrm{1}}0$> oriented nanowires show {$111$}A facets with adatoms accumulation on the sides of the top surface. Transmission electron microscopy observations reveal a continuous epitaxial relation between the CdTe substrate and the HgTe nanowire. Measurements of the resistance with fourpoint scanning tunneling microscopy indicates a good electrical homogeneity along the main NW axis and a thermally activated transport. This growth method paves the way toward the fabrication of complex HgTe-based nanostructures for electronic transport measurements.
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Submitted 11 July, 2024;
originally announced July 2024.
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Electrical characterization of the azimuthal anisotropy of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$-based ferromagnetic nanotubes
Authors:
Dhananjay Tiwari,
Martin Christoph Scheuerlein,
Mahdi Jaber,
Eric Gautier,
Laurent Vila,
Jean-Philippe Attané,
Michael Schöbitz,
Aurélien Masseboeuf,
Tim Hellmann,
Jan P. Hofmann,
Wolfgang Ensinger,
Olivier Fruchart
Abstract:
We report on the structural, electric and magnetic properties of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$ ferromagnetic nanotubes, displaying azimuthal magnetization. The tubes are fabricated using electroless plating in polycarbonate porous templates, with lengths several tens of micrometers, diameters from 100nm to 500nm and wall thicknesses from 10nm to 80nm. The resistivity is…
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We report on the structural, electric and magnetic properties of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$ ferromagnetic nanotubes, displaying azimuthal magnetization. The tubes are fabricated using electroless plating in polycarbonate porous templates, with lengths several tens of micrometers, diameters from 100nm to 500nm and wall thicknesses from 10nm to 80nm. The resistivity is $\sim 1.5\times10^{-6}\mathrm{Ω/m}$, and the anisotropic magnetoresistance~(AMR) of 0.2-0.3%, one order of magnitude larger~(resp. smaller) than in the bulk material, which we attribute to the resistance at grain boundaries. We determined the azimuthal anisotropy field from M(H) AMR loops of single tubes contacted electrically. Its magnitude is around 10mT, and tends to increase with the tube wall thickness, as well as the Co content. However, surprisingly it does not dependent much on the diameter nor on the curvature.
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Submitted 10 February, 2023;
originally announced February 2023.
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Flux-closure domains in high aspect ratio electroless-deposited CoNiB nanotubes
Authors:
Michal Staňo,
Sandra Schaefer,
Alexis Wartelle,
Maxime Rioult,
Rachid Belkhou,
Alessandro Sala,
Tevfik Onur Menteş,
Andrea Locatelli,
Laurent Cagnon,
Beatrix Trapp,
Sebastian Bochmann,
Sylvain Martin,
Eric Gautier,
Jean-Christophe Toussaint,
Wolfgang Ensinger,
Olivier Fruchart
Abstract:
We report the imaging of magnetic domains in ferromagnetic CoNiB nanotubes with very long aspect ratio, fabricated by electroless plating. While axial magnetization is expected for long tubes made of soft magnetic materials, we evidence series of azimuthal domains. We tentatively explain these by the interplay of anisotropic strain and/or grain size, with magneto-elasticity and/or anisotropic inte…
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We report the imaging of magnetic domains in ferromagnetic CoNiB nanotubes with very long aspect ratio, fabricated by electroless plating. While axial magnetization is expected for long tubes made of soft magnetic materials, we evidence series of azimuthal domains. We tentatively explain these by the interplay of anisotropic strain and/or grain size, with magneto-elasticity and/or anisotropic interfacial magnetic anisotropy. This material could be interesting for dense data storage, as well as curvature-induced magnetic phenomena such as the non-reciprocity of spin-wave propagation.
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Submitted 14 May, 2018; v1 submitted 21 April, 2017;
originally announced April 2017.
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Large and uniform optical emission shifts in quantum dots externally strained along their growth axis
Authors:
Petr Stepanov,
Marta Elzo Aizarna,
Joël Bleuse,
Nitin S. Malik,
Yoann Curé,
Eric Gautier,
Vincent Favre-Nicolin,
Jean-Michel Gérard,
Julien Claudon
Abstract:
We introduce a method which enables to directly compare the impact of elastic strain on the optical properties of distinct quantum dots (QDs). Specifically, the QDs are integrated in a cross-section of a semiconductor core wire which is surrounded by an amorphous straining shell. Detailed numerical simulations show that, thanks to the mechanical isotropy of the shell, the strain field in a core se…
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We introduce a method which enables to directly compare the impact of elastic strain on the optical properties of distinct quantum dots (QDs). Specifically, the QDs are integrated in a cross-section of a semiconductor core wire which is surrounded by an amorphous straining shell. Detailed numerical simulations show that, thanks to the mechanical isotropy of the shell, the strain field in a core section is homogeneous. Furthermore, we use the core material as an in situ strain gauge, yielding reliable values for the emitter energy tuning slope. This calibration technique is applied to self-assembled InAs QDs submitted to incremental tensile strain along their growth axis. In contrast to recent studies conducted on similar QDs stressed perpendicularly to their growth axis, optical spectroscopy reveals 5-10 times larger tuning slopes, with a moderate dispersion. These results highlight the importance of the stress direction to optimise QD response to applied strain, with implications both in static and dynamic regimes. As such, they are in particular relevant for the development of wavelength-tunable single photon sources or hybrid QD opto-mechanical systems.
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Submitted 22 February, 2016;
originally announced February 2016.
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Pd magnetism induced by indirect interlayer exchange coupling
Authors:
W. E. Bailey,
A. Ghosh,
S. Auffret,
E. Gautier,
U. Ebels,
F. Wilhelm,
A. Rogalev
Abstract:
We show that very large paramagnetic moments are created in ultrathin Pd layers through indirect interlayer exchange coupling. Pd $L$-edge x-ray magnetic circular dichroism measurements show Pd moments in [Pd(2.5nm)/Cu(3nm)/Ni$_{81}$Fe$_{19}$(5nm)/Cu(3nm)]$_{20}$ superlattices which are ferromagnetically aligned with the applied field and nearly 3% the size of Pd moments created in directly exchan…
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We show that very large paramagnetic moments are created in ultrathin Pd layers through indirect interlayer exchange coupling. Pd $L$-edge x-ray magnetic circular dichroism measurements show Pd moments in [Pd(2.5nm)/Cu(3nm)/Ni$_{81}$Fe$_{19}$(5nm)/Cu(3nm)]$_{20}$ superlattices which are ferromagnetically aligned with the applied field and nearly 3% the size of Pd moments created in directly exchange coupled [Pd(2.5nm)/Ni$_{81}$Fe$_{19}$(5nm)]$_{20}$ superlattices. The induced moment is two orders of magnitude larger than that expected from RKKY exchange acting on the bulk paramagnetic susceptibility of Pd.
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Submitted 1 October, 2012;
originally announced October 2012.
